CN106340551B - 一种基于Mg:β-Ga2O3/NSTO异质结的零功耗日盲紫外探测器及其制备方法 - Google Patents
一种基于Mg:β-Ga2O3/NSTO异质结的零功耗日盲紫外探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种基于Mg:β‑Ga2O3/NSTO异质结的零功耗日盲紫外探测器及其制备方法,具体是指采用激光分子束外延技术在NSTO单晶衬底上沉积一层镁掺杂β‑Ga2O3薄膜,然后利用掩膜版并通过射频磁控溅射技术在掺镁氧化镓薄膜上沉积一层钛/金薄膜作为透光电极,并采用机械力分别在Ti/Au电极和衬底上压印In电极作为上电极和下电极,制备获得的Mg:β‑Ga2O3/NSTO异质结日盲型紫外探测器件。该异质结器件可工作于0V偏压下,具有零功耗工作的特点。本发明中Mg:β‑Ga2O3薄膜的制备方法具有工艺可控性强,易操作,所得薄膜表面致密、厚度稳定均一、可大面积制备、重复性好等优势。该发明制备的零功耗Mg:β‑Ga2O3/NSTO异质结光电探测器在日盲紫外探测领域具有很大的应用前景。
Description
技术领域
本发明属于光电探测器技术领域,具体涉及一种基于Mg:β-Ga2O3/NSTO异质结的零功耗日盲紫外探测器及其制备方法。
技术背景
臭氧层在200-280nm具有极大的吸收系数,在255.3nm达到极大值。由于臭氧层的强烈吸收,使得近地面对流层内此波段的太阳背景低于10-13W/m2,在近地面几乎没有此紫外波段,所以我们称将这段波长内的紫外线称为日盲区。对日盲区的探测,不仅可以避免太阳光干扰,而且具有极低的背景噪声,相对于红外探测,具有噪声低,全天候工作,抗干扰的特点。由于高压线电晕、宇宙空间、导弹羽烟和火焰等都含有紫外辐射,使得紫外探测技术被应用于军事、科研、航空航天、通信电子等许多领域。
目前,宽禁带半导体紫外探测器是紫外探测器的主要研究方向,尤其是日盲段紫外探测器,具有体积小、功耗小、无需低温冷却和虚警率低的优点,并可以通过调节材料组分改变响应的波长范围。低功耗和高灵敏度的探测器一直是实际应用中最关心的问题,目前市场上的真空紫外探测器件由于功耗高而逐渐要被市场淘汰。β-Ga2O3薄膜内部往往会存在大量氧空位,这些氧空位会捕获光生载流子,降低了光电探测器的灵敏度。Mg的稳定价态是二价,比正三价Ga少一个电子,Mg与O的配位数要比Ga与O的配位数少,Mg掺杂取代Ga后理论上能减少薄膜内部的氧空位,提高光电探测器的灵敏度。
发明内容
本发明的目的在于提供一种零功耗、灵敏度高、探测能力强的日盲紫外探测器及其制备方法。
本发明的技术方案为:
一种基于Mg:β-Ga2O3/NSTO异质结的零功耗日盲紫外探测器由掺镁β-Ga2O3薄膜、NSTO衬底、Ti/Au薄膜电极以及In电极组成。
如图1所示为本发明设计的基于Mg:β-Ga2O3/NSTO异质结的零功耗日盲紫外探测器示意图,所述的掺镁β-Ga2O3薄膜厚度为0.8-1.2μm,面积为1.0×1.0~ 1.5×1.5cm2,Mg的掺杂浓度以摩尔百分比计为3~5%,所述的NSTO衬底作为制备掺镁β-Ga2O3薄膜的衬底,其面积与所制备的薄膜相同,Mg:β-Ga2O3和NSTO 构成异质结,形成内建电场,可分离光生载流子,所述的Ti/Au薄膜电极位于掺镁β-Ga2O3薄膜的表面,形状为直径3mm的圆形,Ti薄膜电极厚度为10-20nm, Au薄膜电极在Ti薄膜电极的上方,厚度为20-60nm,所述的In电极分为上电极和下电极,上电极在Au薄膜电极上方,形状为直径0.2mm的圆形,下电极在NSTO衬底下方,形状为直径2mm的圆形。
一种基于Mg:β-Ga2O3/NSTO异质结的零功耗日盲紫外探测器的制备方法,包括如下步骤:
(1)以(100)面0.7wt%Nb:SrTiO3(NSTO)为衬底,清洗过程如下:将衬底依次浸泡到丙酮、乙醇、去离子水中各超声10分钟,取出后再用去离子水冲洗,最后用干燥的N2气吹干,待用;
(2)把Ga2O3靶材放置在激光分子束外延系统的靶台位置,在Ga2O3靶材边缘放置6-10颗直径2mm的Mg球形颗粒,将步骤1)处理后的NSTO衬底固定在样品托上,放进真空腔;
(3)将腔体抽真空,调整真空腔内的压强,通入氩气,加热NSTO衬底,利用激光分子束外延法生长Mg:β-Ga2O3薄膜,其中,Ga2O3靶材与NSTO衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为0.8-1.0Pa,激光的波长为248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为800-1200次,NSTO衬底的加热温度为700-800℃;
(4)利用掩膜版并通过射频磁控溅射技术在Mg:β-Ga2O3薄膜上面沉积一层 Ti/Au薄膜作为透光电极。其中,溅射工艺条件:抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为40-60W, Ti层的溅射时间为30s,Au层的溅射时间为60s;
(5)在步骤(4)中获得的圆形Au/Ti电极的边角上采用机械力按上一块直径为0.2mm的In电极,作为Mg:β-Ga2O3/NSTO异质结的上电极;同样采用机械力在背面的NSTO按上In下电极,该电极的直径为2mm。
优选的,所述的步骤(3)中加热NSTO衬底时腔体压强为0.8-0.9Pa,激光脉冲次数为800-1000次,NSTO衬底的加热温度为750-800℃。
优选的,所述的步骤(4)中衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为40-50W,Ti层的溅射时间为30s,Au层的溅射时间为 60s。
本发明的优点和有益效果:
1、本发明方法所制备的紫外探测器可以在0V偏压下工作,实现零功耗日盲区紫外线的探测。
2、本发明方法所制备的紫外探测器比纯β-Ga2O3/NSTO异质结具有更高的光暗比和更快的响应速度。
3、本发明方法采用微纳米加工技术制备的紫外探测器具有工艺可控性强,操作简单,所得薄膜表面致密,厚度稳定均一,且重复测试具有可恢复性等特点,具有很大的应用前景。
附图说明
图1是本发明方法制得的Mg:β-Ga2O3/NSTO异质结日盲紫外探测器结构示意图;
图2是用本发明方法制得的Mg:β-Ga2O3的XRD图谱;
图3是用本发明方法制得的Mg:β-Ga2O3的EDS图谱;
图4是用本发明方法制得的Mg:β-Ga2O3的紫外-可见吸收光谱图;
图5是用本发明方法制得的Mg:β-Ga2O3/NSTO和纯β-Ga2O3/NSTO异质结日盲紫外探测器在0V偏压及光强为30μW/cm2的254nm光照下的I-t曲线。
具体实施方式
以下结合实例进一步说明本发明。
实施例1
步骤如下:
(1)以(100)面0.7wt%Nb:SrTiO3(NSTO)为衬底,清洗过程如下:将衬底依次浸泡到丙酮、乙醇、去离子水中各超声10分钟,取出后再用去离子水冲洗,最后用干燥的N2气吹干,待用;
(2)把Ga2O3靶材放置在激光分子束外延系统的靶台位置,在Ga2O3靶材边缘放置6颗直径2mm的Mg球形颗粒,将步骤1)处理后的NSTO衬底固定在样品托上,放进真空腔;
(3)将腔体抽真空,调整真空腔内的压强,通入氩气,加热NSTO衬底,利用激光分子束外延法生长Mg:β-Ga2O3薄膜,其中,Ga2O3靶材与NSTO衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为0.8Pa,激光的波长为248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为1200次,NSTO衬底的加热温度为750℃;
(4)利用掩膜版并通过射频磁控溅射技术在Mg:β-Ga2O3薄膜上面沉积一层 Ti/Au薄膜作为透光电极。其中,溅射工艺条件:抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为40W,Ti 层的溅射时间为30s,Au层的溅射时间为60s;
(5)在步骤(4)中获得的圆形Au/Ti电极的边角上采用机械力按上一块直径为0.2mm的In电极,作为Mg:β-Ga2O3/NSTO异质结的上电极;同样采用机械力在背面的NSTO按上In下电极,该电极的直径为2mm。
经过上述实验过程即可制备得到Mg:β-Ga2O3/NSTO异质结日盲紫外探测器,如图1所示。图2为所得薄膜的XRD图谱,图中(201)、(402)和(603)衍射峰为Mg:β-Ga2O3的特征峰,没有发现氧化镁的特征峰,表明镁已经掺入氧化镓的晶格内部。对该薄膜进行能谱(EDS)扫描,发现薄膜中含有Ga、Mg和O 元素的特征峰,其中Mg所占摩尔百分比为3.5%(图3)。图4为所得Mg:β-Ga2O3薄膜的紫外-可见吸收光谱图,发现Mg:β-Ga2O3在可见光区域以及近紫外区域有着良好的透光性,其吸收边主要在280nm左右,通过计算可得其禁带宽度约为 4.9eV。
该Mg:β-Ga2O3/NSTO异质结日盲紫外探测器可在0V偏压下工作,具有零功耗工作的特点。图5给出了在0V偏压及光强为30μW/cm2的254nm光照下通过不断灯开灯关测得的I-t曲线。重复测试4个I-t循环,该器件表现出很好的重复性。在黑暗情况下,该探测器的暗电流为-1nA,当光强为30μW/cm2的254 nm紫外光照射后,电流迅速增加至-65nA,光暗比Iphoto/Idark达到65。在相同光照条件下对纯β-Ga2O3/NSTO异质结进行光电检测,发现光照后电流增加至-10 nA,光暗比Iphoto/Idark仅为10,表明Mg掺杂对β-Ga2O3/NSTO异质结的灵敏度有极大的提升。
实施例2
步骤(1)、(2)和(5)均与实施例1相同。步骤(3)中将腔体抽真空,调整真空腔内的压强,通入氩气,加热NSTO衬底,利用激光分子束外延法生长 Mg:β-Ga2O3薄膜,其中,Ga2O3靶材与NSTO衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为1.0Pa,激光的波长为 248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为1000次, NSTO衬底的加热温度为700℃。步骤(4)中利用掩膜版并通过射频磁控溅射技术在Mg:β-Ga2O3薄膜上面沉积一层Ti/Au薄膜作为透光电极。其中,溅射工艺条件:抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为45W,Ti层的溅射时间为30s,Au层的溅射时间为60s。所得薄膜的晶体结构、化学成分以及光电特性均与实例1类似。
实施例3
步骤(1)、(2)和(5)均与实施例1相同。步骤(3)中将腔体抽真空,调整真空腔内的压强,通入氩气,加热NSTO衬底,利用激光分子束外延法生长 Mg:β-Ga2O3薄膜,其中,Ga2O3靶材与NSTO衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为1.5Pa,激光的波长为 248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为1000次, NSTO衬底的加热温度为750℃。步骤(4)中利用掩膜版并通过射频磁控溅射技术在Mg:β-Ga2O3薄膜上面沉积一层Ti/Au薄膜作为透光电极。其中,溅射工艺条件:抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为50W,Ti层的溅射时间为30s,Au层的溅射时间为60s。所得薄膜的晶体结构、化学成分以及光电特性均与实例1类似。
实施例4
步骤(1)、(2)和(5)均与实施例1相同。步骤(3)中将腔体抽真空,调整真空腔内的压强,通入氩气,加热NSTO衬底,利用激光分子束外延法生长 Mg:β-Ga2O3薄膜,其中,Ga2O3靶材与NSTO衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为1.0Pa,激光的波长为 248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为1200次, NSTO衬底的加热温度为800℃。步骤(4)中利用掩膜版并通过射频磁控溅射技术在Mg:β-Ga2O3薄膜上面沉积一层Ti/Au薄膜作为透光电极。其中,溅射工艺条件:抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为40W,Ti层的溅射时间为30s,Au层的溅射时间为60s。所得薄膜的晶体结构、化学成分以及光电特性均与实例1类似。
实施例5
步骤(1)、(2)和(5)均与实施例1相同。步骤(3)中将腔体抽真空,调整真空腔内的压强,通入氩气,加热NSTO衬底,利用激光分子束外延法生长 Mg:β-Ga2O3薄膜,其中,Ga2O3靶材与NSTO衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为0.8Pa,激光的波长为 248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为1100次, NSTO衬底的加热温度为750℃。步骤(4)中利用掩膜版并通过射频磁控溅射技术在Mg:β-Ga2O3薄膜上面沉积一层Ti/Au薄膜作为透光电极。其中,溅射工艺条件:抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为55W,Ti层的溅射时间为30s,Au层的溅射时间为60s。所得薄膜的晶体结构、化学成分以及光电特性均与实例1类似。
Claims (5)
1.一种基于Mg:β-Ga2O3/NSTO异质结日盲紫外光电探测器的制备方法,其特征在于由掺镁β-Ga2O3薄膜、NSTO衬底、Ti/Au薄膜电极以及In电极组成,包括如下步骤:
(1)对NSTO衬底进行清洗,清洗过程如下:将衬底依次浸泡到丙酮、乙醇、去离子水中各超声10分钟,取出后再用去离子水冲洗,最后用干燥的N2气吹干,待用;
(2)把Ga2O3靶材放置在激光分子束外延系统的靶台位置,在Ga2O3靶材边缘放置6-10颗直径2mm的Mg球形颗粒,将步骤1)处理后的NSTO衬底固定在样品托上,放进真空腔;
(3)将腔体抽真空,调整真空腔内的压强,通入氩气,加热NSTO衬底,利用激光分子束外延法生长Mg:β-Ga2O3薄膜,其中,Ga2O3靶材与NSTO衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为0.8-1.0Pa,激光的波长为248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为800-1200次,NSTO衬底的加热温度为700-800℃;
(4)利用掩膜版并通过射频磁控溅射技术在Mg:β-Ga2O3薄膜上面沉积一层Ti/Au薄膜作为透光电极,其中,溅射工艺条件:抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为40-60W,Ti层的溅射时间为30s,Au层的溅射时间为60s;
(5)在步骤(4)中获得的圆形Au/Ti电极的边角上采用机械力按上一块直径为0.2mm的In电极,作为Mg:β-Ga2O3/NSTO异质结的上电极;同样采用机械力在背面的NSTO按上In下电极,该电极的直径为2mm;
所述的掺镁β-Ga2O3薄膜厚度为0.8-1.2μm,面积为1.0×1.0~1.5×1.5cm2,Mg的掺杂浓度以摩尔百分比计为3~5%,所述的NSTO衬底作为制备掺镁β-Ga2O3薄膜的衬底,其面积与所制备的掺镁β-Ga2O3薄膜相同,Mg:β-Ga2O3和NSTO构成异质结,形成内建电场,可分离光生载流子。
2.根据权利要求1所述的方法,其特征在于,所述的Ti/Au薄膜电极位于掺镁β-Ga2O3薄膜的表面,形状为直径3mm的圆形,Ti薄膜电极厚度为10-20nm,Au薄膜电极在Ti薄膜电极的上方,厚度为20-60nm,所述的In电极分为上电极和下电极,上电极在Au薄膜电极上方,形状为直径0.2mm的圆形,下电极在NSTO衬底下方,形状为直径2mm的圆形。
3.根据权利要求1所述的方法,其特征在于可探测200-280nm的日盲紫外光,并可在0V偏压下工作,实现零功耗日盲区紫外线的探测。
4.根据权利要求1所述的制备方法,其特征在于所述的步骤(3)中抽真空后腔体压强为1×10-6Pa,加热NSTO衬底时腔体压强为0.8-0.9Pa,激光的波长为248nm,激光能量为5J/cm2,激光脉冲频率为1Hz,激光脉冲次数为800-1000次,NSTO衬底的加热温度为750-800℃。
5.根据权利要求1所述的制备方法,其特征在于所述的步骤(3)中抽真空后腔体压强为1×10-4Pa,衬底温度为室温,工作气氛为Ar气,工作气压为0.8Pa,溅射功率为40-50W,Ti层的溅射时间为30s,Au层的溅射时间为60s。
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