CN109065661A - 基于铝酸镁衬底的氧化镓薄膜光电探测器及其制造方法 - Google Patents
基于铝酸镁衬底的氧化镓薄膜光电探测器及其制造方法 Download PDFInfo
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Abstract
基于铝酸镁衬底的氧化镓薄膜光电探测器及其制造方法。本发明提供了一种氧化镓薄膜光电探测器，以及相应的氧化镓薄膜和氧化镓薄膜的制造方法。所述的探测器包括依次叠置的衬底、氧化镓薄膜和电极，其中氧化镓薄膜为(00l)取向的β‑Ga2O3薄膜，衬底为MgAl2O4衬底。本发明的工艺可控性强、容易操作。本发明制得的氧化镓薄膜表面致密、厚度稳定均一，适于大面积制备、且复性好。本发明制得的光电探测器响应度高、暗电流小、紫外可见抑制比高、制造工艺简单，且所用材料容易获得。
Description
技术领域
本发明属于光电探测器技术领域，特别涉及一种利用激光脉冲沉积方法在铝酸镁(MgAl2O4)衬底上外延生长(00l)取向β型氧化镓(β-Ga2O3)薄膜的方法，以及应用β-Ga2O3薄膜的光电探测器。
背景技术
由于臭氧层对紫外辐射区的强烈吸收作用，日盲紫外探测器不受太阳光背景影响，可以全天候工作，具有灵敏度高、虚警率低等特点，是国防预警、紫外通信、电力工业和环境监测等应用的核心技术。目前得到广泛应用的日盲探测器主要是由紫外光电倍增管构成，然而这种探测器的检测距离小，工作电压高，不能抗雷电的干扰。同时，即使是当前最高新技术的光电倍增管，体积也比半导体级探测器大很多，价格也极其昂贵。因此，基于尺寸、功耗、成本和安全等因素的考虑，采用半导体探测器替代光电倍增管是一种比较理想的选择。
作为一种直接带隙宽禁带半导体，β-Ga2O3具有优异的化学稳定性和热稳定性，其室温下禁带宽度约为4.9eV，对应的带边发射波长为280nm，已经进入深紫外波段，加上极高的光学透过率，因此它是制备光电探测器，特别是日盲深紫外探测器的理想材料。目前国际上性能最好的基于β-Ga2O3材料的日盲探测器是日本石卷大学报道的基于单晶β-Ga2O3的，但单晶材料成本极其昂贵，无法实现大规模生产，不具备产业化可能。因此，基于异质外延生长的β-Ga2O3薄膜的日盲探测器引起了人们的广泛关注。
由于β-Ga2O3单晶属于单斜晶系，自然界还缺乏能跟其晶格匹配度较高且制造成本较低的基底材料，虽然以c面蓝宝石(Al2O3)为基底能生长β-Ga2O3薄膜，但是在Al2O3衬底上异质外延生长高质量的β-Ga2O3薄膜难度仍然非常大，特别是在Al2O3衬底上生长获得的β-Ga2O3薄膜均为(-201)取向，基于该取向生长的β-Ga2O3基光电探测器性能要弱于沿(00l)取向生长的β-Ga2O3基光电探测器。
因此，找到与β-Ga2O3晶格匹配度较高，且使β-Ga2O3薄膜生长质量较好的衬底，并开发出相对应的工艺方法，仍是业界极待解决的问题。
发明内容
为解决上述技术问题，本发明提出一种基于MgAl2O4衬底的(00l)取向β-Ga2O3薄膜光电探测器制备方法，可应用于日盲紫外探测器。
本发明在MgAl2O4衬底上制备了沿(00l)取向外延生长的β-Ga2O3薄膜基金属-半导体-金属MSM结构日盲紫外探测器。该发明为(00l)取向β-Ga2O3薄膜基MSM结构光电探测器，特别是日盲紫外探测器的制备提供理论和技术支持。
本发明的氧化镓薄膜光电探测器，包括依次叠置的衬底、氧化镓薄膜和电极，所述氧化镓薄膜为(00l)取向的β-Ga2O3薄膜，所述衬底为MgAl2O4衬底。
根据本发明的一种具体实施方式，所述MgAl2O4衬底是(100)取向的。
根据本发明的一种具体实施方式，所述电极包括Ti层和/或金层。
根据本发明的一种具体实施方式，所述氧化镓薄膜的厚度为100nm至200nm。
本发明还提出一种氧化镓薄膜的制造方法，包括：在衬底上，采用激光脉冲沉积法生长氧化镓薄膜；其特征在于：所述氧化镓薄膜为(00l)取向的β-Ga2O3薄膜，所述衬底为MgAl2O4衬底。
根据本发明的一种具体实施方式，所述激光脉冲沉积法的生长参数包括：脉冲激光能量为1J/cm2～5J/cm2。
根据本发明的一种具体实施方式，所述激光脉冲沉积法的生长参数还包括：脉冲激光频率为1Hz～5Hz。
根据本发明的一种具体实施方式，所述激光脉冲沉积法的生长参数还包括：衬底温度为600℃～850℃。
根据本发明的一种具体实施方式，所述激光脉冲沉积法的生长参数还包括：薄膜的生长气压为1×10-5Pa～1Pa。
相应的，本发明还提出一种氧化镓薄膜光电探测器的制造方法，所述氧化镓薄膜光电探测器包括氧化镓薄膜，所述氧化镓薄膜是通过前述的氧化镓薄膜的制造方法所制造的。
本发明的有益效果是：
1.本发明制备过程简单，所用衬底为商业产品，能够获得(00l)取向的β-Ga2O3薄膜；采用商业化的制备方法激光脉冲沉积生长薄膜，工艺可控性强，易操作，所得薄膜表面致密、厚度稳定均一、可大面积制备、重复性好。
2.本发明所得的MSM结构的(00l)取向的β-Ga2O3薄膜光电探测器响应度高，暗电流小，紫外可见抑制比高，制造工艺简单，所用材料容易获得，具有广阔的发展前景。
附图说明
图1是通过本发明一个实施例的方法制备的MgAl2O4基底上β-Ga2O3薄膜的日盲紫外探测器结构示意图；
图2是用本发明一个实施例的方法制得的MgAl2O4基底上β-Ga2O3薄膜的XRD图；
图3是用本发明一个实施例的方法制得的β-Ga2O3薄膜的紫外可见光谱；
图4是用本发明一个实施例的方法制得的β-Ga2O3薄膜的扫描电子显微镜图；
图5是用本发明一个实施例的方法制得的β-Ga2O3薄膜日盲紫外探测器在无光照，365nm及254nm光照下的I-V曲线；
图6是本发明一个实施例的方法制得的β-Ga2O3薄膜日盲紫外探测器在5V偏压的254nm光照下的I-T曲线。
具体实施方式
总的来说，本发明提出一种在铝酸镁(MgAl2O4)衬底上外延生长(00l)取向β-Ga2O3薄膜并制作光电探测器的方法。该方法应用激光脉冲沉积技术，生长的条件容易控制，重复性好，稳定性高，适宜进行大规模生产。本发明的光电探测器适合于日盲紫外探测器。
本发明以(100)取向的MgAl2O4为衬底，利用激光脉冲沉积方法生长(00l)取向的β-Ga2O3薄膜作为光敏层。
本发明在光敏层上再通过磁控溅射的方法溅射金属电极(例如Au层和/或Ti层叉指电极)，从而获得MSM结构的光电探测器件。通过本发明方法制备得到的日盲紫外探测器，结构为MSM型三明治结构，从下到上分别是MgAl2O4衬底、(00l)取向β-Ga2O3薄膜、金属电极。
本发明还提出一种光电探测器，包括衬底和形成在衬底上的光电薄膜和电极层，所述光电薄膜为上述薄膜制备方法制作的薄膜。
以下结合附图并通过具体实施例来进一步说明本发明，该实施例是一种制备日盲紫外探测器的方法，该方法包括如下步骤：
(1)取一片10mm×10mm×0.5mm大小的(100)取向的MgAl2O4衬底，将衬底依次浸泡在15毫升的丙酮、无水乙醇、去离子水中分别超声15分钟，取出后再用流动的去离子水冲洗，最后用干燥的N2气吹干，等待下一步使用。
(2)将上述清洗干净的MgAl2O4衬底放入沉积室，采用激光脉冲沉积在其上生长β-Ga2O3薄膜，以99.99％纯度的Ga2O3陶瓷为靶材，激光脉冲沉积技术的具体生长参数如下：背底真空压强小于1×10-6Pa，工作气氛为氧气，工作气压为5×10-3Pa，衬底温度为750℃，激光波长为248nm，激光能量为5J/cm2，脉冲激光频率为2Hz，脉冲数为20000下，得到的β-Ga2O3薄膜的厚度约150nm。
(3)上述制备的β-Ga2O3薄膜用镂空的叉指电极掩膜板遮挡，采用磁控溅射方法在薄膜表面先后溅射金属Ti层(约10nm)和Au层(约20nm)获得Au/Ti叉指电极，叉指金属电极的指宽为200μm，指长为2800μm，各叉指的间距为200μm，光敏面积为2800μm×1200μm。溅射工艺条件如下：背底真空为1×10-4Pa，衬底温度为室温，工作气氛为Ar气，工作气压为3Pa，溅射功率为40W，Ti层的溅射时间为10s，Au层的溅射时间为20s。
通过上述步骤制备获得(00l)取向β-Ga2O3薄膜日盲紫外探测器如图1所示，包括(100)取向的MgAl2O4衬底1、(00l)取向β-Ga2O3薄膜2和叉指电极3。在叉指电极3两侧外加5V偏压，电流则从正电极流入，通过光敏层β-Ga2O3薄膜，从负电极流出，构成金属-半导体-金属(MSM)型日盲紫外探测器。
图2给出了β-Ga2O3薄膜的XRD，除去MgAl2O4衬底的衍射峰外，有且仅有β-Ga2O3(400)衍射峰，说明所有的样品都是沿着(00l)晶面外延生长的β相Ga2O3薄膜。
图3给出了β-Ga2O3薄膜的紫外可见光吸收谱，从图中可以看出，薄膜的吸收边都在260nm左右，具有明显的日盲紫外光敏感特性。
图4给出了β-Ga2O3薄膜的扫描电子显微镜图，可以看出薄膜表面都呈现出颗粒状，颗粒与颗粒存在清晰的界面。
图5给出了日盲紫外探测器在黑暗，254nm及365nm(光强为0.6mW/cm2)光照下的I-V曲线。在黑暗和365nm的光照下，β-Ga2O3薄膜日盲紫外探测器的电流都非常小。而在光强为0.6mW/cm2的254nm光照下，随着正向偏压的增加，光电流有着明显的增加。在5V时，探测器的电流从黑暗情况下的1.3nA增加至570.7nA，光暗比I254/Idark为439，而表明薄膜材料对254nm的紫外光具有强烈的响应，对365nm的光不敏感，几乎没响应。
图6给出了在5V偏压及三种不同光强下(0.3、0.6、0.9mW/cm2)的254nm光照下通过不断灯开灯关测得的I-t曲线。本实施例中重复了6个I-t循环，该器件表现出很好的重复性。通过进一步的拟合，可得知该探测器在的上升响应时间τr及衰减时间τd分别为0.908s和0.096s。
对于上述实施例公开的具体实施方式，本领域的技术人员可在一定的范围内变化，具体如下：根据本发明的优选实施方式，所述靶材为99.99％纯度的Ga2O3陶瓷靶材。所述沉积过程工作气氛为氧气，薄膜生长工作气压为1×10-5Pa～1Pa，优选5×10-3Pa。所述衬底温度为600℃～850℃，优选为750℃。所述激光波长优选为248nm，脉冲激光能量为1J/cm2～5J/cm2，优选为5J/cm2，脉冲激光频率为1Hz～5Hz，优选为2Hz，脉冲数优选为20000下。得到的β-Ga2O3薄膜的厚度优选为100nm至200nm。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种氧化镓薄膜光电探测器，包括依次叠置的衬底、氧化镓薄膜和电极，其特征在于：所述氧化镓薄膜为(00l)取向的β-Ga2O3薄膜，所述衬底为MgAl2O4衬底。
2.如权利要求1所述的氧化镓薄膜光电探测器，其特征在于：所述MgAl2O4衬底是(100)取向的。
3.如权利要求1或2所述的氧化镓薄膜光电探测器，其特征在于：所述电极包括Ti层和/或金层。
4.如权利要求1或2所述的氧化镓薄膜光电探测器，其特征在于：所述氧化镓薄膜的厚度为100nm至200nm。
5.一种氧化镓薄膜的制造方法，包括：在衬底上，采用激光脉冲沉积法生长氧化镓薄膜；其特征在于：所述氧化镓薄膜为(00l)取向的β-Ga2O3薄膜，所述衬底为MgAl2O4衬底。
6.如权利要求5所述的氧化镓薄膜的制造方法，其特征在于：所述激光脉冲沉积法的生长参数包括：脉冲激光能量为1J/cm2～5J/cm2。
7.如权利要求6所述的氧化镓薄膜的制造方法，其特征在于：所述激光脉冲沉积法的生长参数还包括：脉冲激光频率为1Hz～5Hz。
8.如权利要求7所述的氧化镓薄膜的制造方法，其特征在于：所述激光脉冲沉积法的生长参数还包括：衬底温度为600℃～850℃。
9.如权利要求8所述的氧化镓薄膜的制造方法，其特征在于：所述激光脉冲沉积法的生长参数还包括：薄膜的生长气压为1×10-5Pa～1Pa。
10.一种氧化镓薄膜光电探测器的制造方法，所述氧化镓薄膜光电探测器包括氧化镓薄膜，其特征在于，所述氧化镓薄膜是通过权利要求5至9中任一项所述的氧化镓薄膜的制造方法所制造的。
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