CN105870225B - 一种单片集成的多功能紫外/日盲紫外双色探测器及其制备方法 - Google Patents
一种单片集成的多功能紫外/日盲紫外双色探测器及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种紫外/日盲紫外双色探测器,具体是指一种单片集成的多功能紫外/日盲紫外双色探测器及其制备方法。本发明是通过激光分子束外延技术在碳化硅衬底上沉积一层氧化镓薄膜,然后利用掩膜版并通过射频磁控溅射技术在碳化硅衬底和氧化镓薄膜上沉积一层钛/金薄膜作为电极使用。本发明的优点是:所制备的单片集成的多功能双色紫外探测器具有反应灵敏,性能稳定,暗电流小,在不同电压模式下可以分别实现日盲区紫外火焰探测以及紫外线强度检测的功能,可应用于火灾报警、高压线电晕以及太阳光紫外线强度的探测;另外,该制备方法具有工艺可控性强,操作简单,普适性好,且重复测试具有可恢复性等特点,具有很大的应用前景。
Description
技术领域
本发明涉及一种紫外/日盲紫外双色探测器,具体是指一种单片集成的多功能紫外/日盲紫外双色探测器及其制备方法。
技术背景
臭氧层在200‐320nm具有极大的吸收系数,在255.3nm达到极大值。由于臭氧层的强烈吸收,使得近地面对流层内此波段的太阳背景低于10‐13W/m2,在近地面几乎没有此紫外波段,所以我们称将这段波长内的紫外线称为日盲区。对日盲区的探测,不仅可以避免太阳光干扰,而且具有极低的背景噪声,相对于红外探测,具有噪声低,全天候工作,抗干扰的特点。
由于高压线电晕、宇宙空间、导弹羽烟和火焰等都含有紫外辐射,使得紫外探测技术被应用于军事、科研、航空航天、通信电子等许多领域。目前,宽禁带半导体紫外探测器是紫外探测器的主要研究方向,尤其是日盲段紫外探测器,具有体积小、功耗小、无需低温冷却和虚警率低的优点,并可以通过调节材料组分改变响应的波长范围。
探测器的多功能化和便捷化越来越受到普通大众的追捧。在很多情况下,多功能化往往需要增加额外的装置或者器件,这些附件增加了探测器的复杂程度和制造成本,也使得探测器的体积增加,影响了使用的便捷性。为了实现探测器的多功能性和便捷性,本发明设计的单片集成紫外探测器不仅可以检测火焰和电火花辐射的日盲区紫外光谱,还可以检测太阳光紫外线强度。
发明内容
本发明的目的是提供一种灵敏度高、稳定性好、响应时间短、探测能力强、单片集成的多功能紫外/日盲紫外双色探测器及其制备方法。
本发明的技术方案为:
一种单片集成的多功能紫外/日盲紫外双色探测器,其特征在于由β-Ga2O3薄膜、n型4H-SiC衬底、Ti/Au薄膜电极以及双模开关组成。
如图1所示为本发明设计的单片集成的多功能紫外/日盲紫外双色探测器示意图,所述的单片集成的多功能紫外/日盲紫外双色探测器,其特征在于所述的β-Ga2O3薄膜厚度为200-500nm,面积为0.5×0.5~1.5×1.5cm2,所述的n型4H-SiC衬底作为制备β-Ga2O3薄膜的衬底,所述的β-Ga2O3薄膜面积为n型4H-SiC衬底面积的一半,所述的Ti/Au薄膜电极位于Ga2O3薄膜和n型4H-SiC衬底表面,形状为直径200-300微米的圆形,Ti薄膜电极厚度为20-40nm,Au薄膜电极在Ti薄膜电极的上方,厚度为60-120nm,所述双模开关包括可自由切换的开1端、开2端和关闭端,所述双模开关开1端的一边与β-Ga2O3薄膜上的Ti/Au薄膜电极连接,另一边与4H-SiC衬底上的Ti/Au薄膜电极连接,在开1端回路上施加有反向偏压,即4H-SiC衬底上的Ti/Au薄膜电极电位高于β-Ga2O3薄膜上的Ti/Au薄膜电极;所述双模开关开2端的一边与β-Ga2O3薄膜上的Ti/Au薄膜电极连接,另一边与4H-SiC衬底上的Ti/Au薄膜电极连接,在开2端回路上施加有正向偏压,即4H-SiC衬底上的Ti/Au薄膜电极电位低于β-Ga2O3薄膜上的Ti/Au薄膜电极。
一种单片集成的多功能紫外/日盲紫外双色探测器的制备方法,其特征在于该方法具有如下步骤:
1)将n型4H-SiC衬底放入V(HF):V(H2O2)=l:5的溶液中浸泡以去除自然氧化层,然后用丙酮、乙醇和去离子水分别超声清洗,并真空干燥;
2)把Ga2O3靶材放置在激光分子束外延系统的靶台位置,将步骤1)处理后的n型4H-SiC衬底固定在样品托上,放进真空腔;
3)将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热n型4H-SiC衬底时腔体压强为1×10-3Pa,β-Ga2O3薄膜进行原位退火时腔体压强为1-2Pa,激光能量为5J/cm2,激光脉冲频率为1Hz,激光的波长为248nm,n型4H-SiC衬底的加热温度为700-800℃,β-Ga2O3薄膜的退火温度为700-800℃,退火时间为1-2小时;
4)利用掩膜版并通过射频磁控溅射技术在Ga2O3薄膜和n型4H-SiC衬底上面沉积一层Ti/Au薄膜作为测量电极。
优选的,所述的步骤3)中,n型4H-SiC衬底的加热温度为700-750℃,β-Ga2O3薄膜的退火温度为700-750℃,退火时间为1-2小时。
优选的,所述的步骤4)中,Ti/Au薄膜在氩气氛围下退火15分钟,退火温度为250℃。
对构建的一种单片集成的多功能紫外/日盲紫外双色探测器进行光电性能测试是将探针点在电极两端,电极之间加电压-5伏特,测得紫外探测器的I-t特性曲线,通过控制紫外光(254nm和365nm)照射的开关发现探测器只对254nm紫外光谱有响应。另外,电极之间加电压+5伏特,在不同强度的氙灯光照下,发现探测器的光电流呈线性变化,而且能接收到低于120μW/cm2的所有紫外光强信号。
本发明的优点:
1、本发明方法所制备的紫外探测器,在不同电压模式下可以分别实现日盲区紫外火焰探测以及紫外线强度检测的功能,可应用于火灾报警、高压线电晕以及太阳光紫外线强度的探测。
2、本发明方法采用微纳米加工技术制备的紫外探测器具有工艺可控性强,操作简单,普适性好,且重复测试具有可恢复性等特点,具有很大的应用前景。
3、本发明方法所制备的紫外探测器性能稳定,反应灵敏,暗电流小,携带便捷,适合普通大众使用。
附图说明
图1是本发明方法设计的单片集成的多功能紫外/日盲紫外双色探测器的示意图。
图2是用本发明方法测得单片集成的多功能紫外/日盲紫外双色探测器的电极电压为-5V的V-I曲线图。
图3是用本发明方法测得单片集成的多功能紫外/日盲紫外双色探测器的电极电压为-5V的I-t曲线图。
图4是用本发明方法制得的单片集成的多功能紫外/日盲紫外双色探测器电极电压为5V的V-I曲线图。
图5是用本发明方法制得的单片集成的多功能紫外/日盲紫外双色探测器电极电压为5V的光电流-光强曲线图。
具体实施方式
以下结合实例进一步说明本发明。
实施例1
步骤如下:
1)将n型4H-SiC衬底放入V(HF):V(H2O2)=l:5的溶液中浸泡以去除自然氧化层,然后用丙酮、乙醇和去离子水分别超声清洗,并真空干燥;
2)把Ga2O3靶材放置在激光分子束外延系统的靶台位置,将步骤1)处理后的n型4H-SiC衬底固定在样品托上,放进真空腔;
3)将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热n型4H-SiC衬底时腔体压强为1×10-3Pa,β-Ga2O3薄膜进行原位退火时腔体压强为1Pa,激光能量为5J/cm2,激光脉冲频率为1Hz,激光的波长为248nm,n型4H-SiC衬底的加热温度为750℃,β-Ga2O3薄膜的退火温度为700℃,退火时间为1.5小时。
4)利用掩膜版并通过射频磁控溅射技术在Ga2O3薄膜和n型4H-SiC衬底上面沉积一层Ti/Au薄膜作为测量电极。
在单片集成的多功能紫外/日盲紫外双色探测器的电极两端施加电压进行光电性能测量,测量示意图如图1。当开关置于反向偏压-5伏特并在254nm和365nm紫外光的照射下,发现254nm的紫外光响应电流明显增大,而365nm紫外光没有电流产生,在黑暗条件下的V-I曲线显示了明显的整流效应,整流比达到1900(如图2)。图3中的I-t曲线是在-5伏特的电压下测量的,发现控制紫外灯开关,电流瞬时发生变化,并且探测器对波长为254nm的光谱具有高度选择性,对波长为365nm的光谱以及黑暗条件下均没有响应,这种独特的性能可应用于火灾报警、高压线电晕等领域。图4为开关置于正向偏压5伏特,并在氙灯不同光强的紫外光照射下的V-I曲线,发现探测器能接收到低于120μW/cm2的所有光强信号,表明探测器具有高灵敏度。图5的光电流-光强曲线显示了在氙灯的光谱照射下光电流与光强呈线性变化,因此,该探测器可以应用于普通太阳光紫外线强度的检测。
实施例2
步骤(1)、(2)和(4)均与实施例1相同。步骤(3)中先将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热n型4H-SiC衬底时腔体压强为1×10-3Pa,β-Ga2O3薄膜进行原位退火时腔体压强为1Pa,激光能量为5J/cm2,激光脉冲频率为1Hz,激光的波长为248nm,n型4H-SiC衬底的加热温度为700℃,β-Ga2O3薄膜的退火温度为750℃,退火时间为1小时。
在单片集成的多功能紫外/日盲紫外双色探测器电极两端施加电压进行光电性能测量,V-I测量所施加最大电压为-5伏特,I-t曲线是在-5伏特的电压下测量的,发现控制紫外灯开关,电流瞬时发生变化,并且探测器对波长为254nm的光谱具有高度选择性,对波长为365nm的光谱以及黑暗条件下均没有响应。不同光强照射下的V-I曲线是在5伏特的电压下测量的,发现控制氙灯光强开关,电流瞬时发生变化,并且光电流与光强呈线性变化,0-120μW/cm2的所有光强信号均可以被探测器接收到,测试结果均与实施例1类似。
实施例3
步骤(1)、(2)和(4)均与实施例1相同。步骤(3)中先将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热n型4H-SiC衬底时腔体压强为1×10-3Pa,β-Ga2O3薄膜进行原位退火时腔体压强为1.5Pa,激光能量为5J/cm2,激光脉冲频率为1Hz,激光的波长为248nm,n型4H-SiC衬底的加热温度为750℃,β-Ga2O3薄膜的退火温度为750℃,退火时间为1.5小时。
在单片集成的多功能紫外/日盲紫外双色探测器电极两端施加电压进行光电性能测量,V-I测量所施加最大电压为-5伏特,I-t曲线是在-5伏特的电压下测量的,发现控制紫外灯开关,电流瞬时发生变化,并且探测器对波长为254nm的光谱具有高度选择性,对波长为365nm的光谱以及黑暗条件下均没有响应。不同光强照射下的V-I曲线是在5伏特的电压下测量的,发现控制氙灯光强开关,电流瞬时发生变化,并且光电流与光强呈线性变化,0-120μW/cm2的所有光强信号均可以被探测器接收到,测试结果均与实施例1类似。
实施例4
步骤(1)、(2)和(4)均与实施例1相同。步骤(3)中先将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热n型4H-SiC衬底时腔体压强为1×10-3Pa,β-Ga2O3薄膜进行原位退火时腔体压强为1.5Pa,激光能量为5J/cm2,激光脉冲频率为1Hz,激光的波长为248nm,n型4H-SiC衬底的加热温度为700℃,β-Ga2O3薄膜的退火温度为700℃,退火时间为2小时。
在单片集成的多功能紫外/日盲紫外双色探测器电极两端施加电压进行光电性能测量,V-I测量所施加最大电压为-5伏特,I-t曲线是在-5伏特的电压下测量的,发现控制紫外灯开关,电流瞬时发生变化,并且探测器对波长为254nm的光谱具有高度选择性,对波长为365nm的光谱以及黑暗条件下均没有响应。不同光强照射下的V-I曲线是在5伏特的电压下测量的,发现控制氙灯光强开关,电流瞬时发生变化,并且光电流与光强呈线性变化,0-120μW/cm2的所有光强信号均可以被探测器接收到,测试结果均与实施例1类似。
实施例5
步骤(1)、(2)和(4)均与实施例1相同。步骤(3)中先将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热n型4H-SiC衬底时腔体压强为1×10-3Pa,β-Ga2O3薄膜进行原位退火时腔体压强为2Pa,激光能量为5J/cm2,激光脉冲频率为1Hz,激光的波长为248nm,n型4H-SiC衬底的加热温度为740℃,β-Ga2O3薄膜的退火温度为720℃,退火时间为2小时。
在单片集成的多功能紫外/日盲紫外双色探测器电极两端施加电压进行光电性能测量,V-I测量所施加最大电压为-5伏特,I-t曲线是在-5伏特的电压下测量的,发现控制紫外灯开关,电流瞬时发生变化,并且探测器对波长为254nm的光谱具有高度选择性,对波长为365nm的光谱以及黑暗条件下均没有响应。不同光强照射下的V-I曲线是在5伏特的电压下测量的,发现控制氙灯光强开关,电流瞬时发生变化,并且光电流与光强呈线性变化,0-120μW/cm2的所有光强信号均可以被探测器接收到,测试结果均与实施例1类似。
实施例6
步骤(1)、(2)和(4)均与实施例1相同。步骤(3)中先将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10-6Pa,加热n型4H-SiC衬底时腔体压强为1×10-3Pa,β-Ga2O3薄膜进行原位退火时腔体压强为2Pa,激光能量为5J/cm2,激光脉冲频率为1Hz,激光的波长为248nm,n型4H-SiC衬底的加热温度为710℃,β-Ga2O3薄膜的退火温度为730℃,退火时间为1.5小时。
在单片集成的多功能紫外/日盲紫外双色探测器电极两端施加电压进行光电性能测量,V-I测量所施加最大电压为-5伏特,I-t曲线是在-5伏特的电压下测量的,发现控制紫外灯开关,电流瞬时发生变化,并且探测器对波长为254nm的光谱具有高度选择性,对波长为365nm的光谱以及黑暗条件下均没有响应。不同光强照射下的V-I曲线是在5伏特的电压下测量的,发现控制氙灯光强开关,电流瞬时发生变化,并且光电流与光强呈线性变化,0-120μW/cm2的所有光强信号均可以被探测器接收到,测试结果均与实施例1类似。
Claims (7)
1.一种单片集成的多功能紫外/日盲紫外双色探测器,其特征在于由β-Ga2O3薄膜、n型4H-SiC衬底、Ti/Au薄膜电极以及双模开关组成;
所述的β-Ga2O3薄膜厚度为200-500 nm,面积为0.5×0.5~1.5×1.5 cm2,所述的n型4H-SiC衬底作为制备β-Ga2O3薄膜的衬底,所述的β-Ga2O3薄膜面积为n型4H-SiC衬底面积的一半,所述的Ti/Au薄膜电极位于Ga2O3薄膜和n型4H-SiC衬底表面,形状为直径200-300微米的圆形,Ti薄膜电极厚度为20-40 nm, Au薄膜电极在Ti薄膜电极的上方,厚度为60-120nm,所述双模开关包括可自由切换的开1端、开2端和关闭端,所述双模开关开1端的一边与β-Ga2O3薄膜上的Ti/Au薄膜电极连接,另一边与4H-SiC衬底上的Ti/Au薄膜电极连接,在开1端回路上施加有反向偏压,即4H-SiC衬底上的Ti/Au薄膜电极电位高于β-Ga2O3薄膜上的Ti/Au薄膜电极;所述双模开关开2端的一边与β-Ga2O3薄膜上的Ti/Au薄膜电极连接,另一边与4H-SiC衬底上的Ti/Au薄膜电极连接,在开2端回路上施加有正向偏压,即4H-SiC衬底上的Ti/Au薄膜电极电位低于β-Ga2O3薄膜上的Ti/Au薄膜电极。
2.根据权利要求1所述的单片集成的多功能紫外/日盲紫外双色探测器,其特征在于所述的探测器可以检测到0-120 μW/cm2的紫外线光强信号,并且对波长为254 nm的日盲区紫外光谱有响应。
3.一种如权利要求1所述单片集成的多功能紫外/日盲紫外双色探测器的应用,其特征在于将所述的探测器开关置于正向偏压时,可作为太阳光紫外线强度检测仪。
4.一种如权利要求1所述单片集成的多功能紫外/日盲紫外双色探测器的应用,其特征在于将所述的探测器开关置于反向偏压时,可作为日盲区紫外火焰探测器。
5.一种单片集成的多功能紫外/日盲紫外双色探测器的制备方法,其特征在于该方法具有如下步骤:
1)将n型4H-SiC衬底放入V(HF):V(H2O2)=l:5的溶液中浸泡以去除自然氧化层,然后用丙酮、乙醇和去离子水分别超声清洗,并真空干燥;
2)把Ga2O3靶材放置在激光分子束外延系统的靶台位置,将步骤1)处理后的n型4H-SiC衬底固定在样品托上,放进真空腔;
3)将腔体抽真空,通入氧气,调整真空腔内的压强,加热n型4H-SiC衬底,生长β-Ga2O3薄膜,待薄膜生长完毕,继续通入氧气,调整真空腔内的压强,对所得β-Ga2O3薄膜进行原位退火;其中,Ga2O3靶材与n型4H-SiC衬底的距离设定为5厘米,抽真空后腔体压强为1×10−6 Pa,加热n型4H-SiC衬底时腔体压强为1×10−3 Pa,β-Ga2O3薄膜进行原位退火时腔体压强为1-5Pa,激光能量为5 J/cm2,激光脉冲频率为1Hz,激光的波长为248 nm,n型4H-SiC衬底的加热温度为700-800 °C,β-Ga2O3薄膜的退火温度为700-800 °C,退火时间为1-2小时;
4)利用掩膜版并通过射频磁控溅射技术在Ga2O3薄膜和n型4H-SiC衬底上面沉积一层Ti/Au薄膜作为测量电极。
6.根据权利要求5所述的方法,其特征在于所述的步骤3)中,n型4H-SiC
衬底的加热温度为700-750 °C,β-Ga2O3薄膜的退火温度为700-750 °C,退火时间为1-1.5小时。
7.根据权利要求5所述的方法,其特征在于所述的步骤4)中,Ti/Au薄膜
在氩气氛围下退火15分钟,退火温度为250 °C。
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