CN109301026A - 氮掺杂氧化镍-氧化锌近紫外光探测器 - Google Patents
氮掺杂氧化镍-氧化锌近紫外光探测器 Download PDFInfo
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- NPVCRCHUNAWBRA-UHFFFAOYSA-N [O-2].[Zn+2].[Ni]=O Chemical compound [O-2].[Zn+2].[Ni]=O NPVCRCHUNAWBRA-UHFFFAOYSA-N 0.000 title claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000011787 zinc oxide Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 3
- 239000011737 fluorine Substances 0.000 claims abstract description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 229910000480 nickel oxide Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 201000009030 Carcinoma Diseases 0.000 description 1
- 102000008186 Collagen Human genes 0.000 description 1
- 108010035532 Collagen Proteins 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229920001436 collagen Polymers 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 231100000075 skin burn Toxicity 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
Abstract
本发明公开了一种氮掺杂氧化镍‑氧化锌近紫外光探测器，具有如下的结构：Ag/NiO:N/ZnO/FTO导电玻璃，其中FTO为掺氟的氧化铟。这种探测器提高了NiO中的载流子浓度，增加了电导率，增强了内建电场，另一方面，减少了禁带宽度，吸收波长向长波方向移动，对微弱UVA近紫外光有较高的灵敏度。
Description
技术领域
本发明涉及一种氮掺杂氧化镍-氧化锌近紫外光探测器，属于光电探测器技 术领域。
背景技术
紫外探测技术在导弹预警、制导、紫外通讯、高压电晕监测、火焰探测、污 染检测、太阳照度检测等军事和民用领域有着广泛的应用，是红外和激光探测技 术之后快速发展的军民两用光电探测技术。目前最常用的紫外探测器是硅基探测 器，但由于硅的禁带宽度比较窄，为了避免可见光和近红外光等低能量辐射对探 测器的响应，通常要钝化层和滤光层，这会导致器件的有效面积减少。宽禁带半 导体材料，如GaN、AlN、ZnS、SiC等，由于禁带宽度较大对可见光不吸收、 抗紫外辐射能力强等特点，基于宽禁带半导体紫外探测器具有信噪比高、响应速 度快、稳定性好等特点引起了人们的日益重视。
氧化锌(ZnO)是宽禁带(3.3eV)直接带隙的半导体，拥有高的激子束缚 能(60meV)，在紫外探测器方面有着广泛的应用。在制备过程中由于氧空位在 氧化锌禁带中引入施主能级，因此，非有意掺杂的氧化锌是n型半导体材料。由 于强烈的自补偿效，p型氧化锌制备比较困难。氧化镍(NiO)也是一种宽禁带 (3.8eV)直接带隙的半导体，激子束缚能(110meV)比ZnO、GaN(26meV) 高，非有意掺杂的NiO是p型半导体。同时，由于高功函数，NiO通常在有机 光伏器件中作为空穴传输层，具有良好的传输空穴和阻挡电子的能力。因此，p型NiO与n型ZnO构成的NiO/ZnO异质结是紫外光探测器较为理想的结构。
目前国内外已经对NiO/ZnO紫外光探测器进行一些研究，取得了较好的成 果，但是在微弱的紫外光和UVA近紫外光(波长为300～420nm)的探测方面还 存在一定的困难。其原因在于非有意掺杂的NiO是弱p型半导体，载流子浓度 很低，导致NiO的电导率低以及NiO/ZnO之间的内建电场弱。另外，NiO的禁 带宽度大，对波长大于330nm的紫外光是不吸收的，也就是透明的，因此， NiO/ZnO探测器在探测UVA近紫外光方面的效率很低。太阳光中的UVA能穿 透臭氧层和云层到达地球表面，能穿透大部分透明的玻璃以及塑料，可以直达肌肤的真皮层，破坏弹性纤维和胶原蛋白纤维，将皮肤灼伤并引起皮肤癌。因此， 探测微弱的UVA近紫外光有着十分重要的意义。
发明内容
在本发明中，为了提高NiO/ZnO探测器在微弱紫外光和UVA近紫外光等方 面探测性能，提出了在NiO中掺氮(N)的方案，制备了氮掺杂氧化镍(NiO:N) /氧化锌近紫外光探测器，具体的技术方案是这样的：氮掺杂氧化镍-氧化锌近紫 外光探测器，其特征在于具有如下的结构：Ag/NiO:N/ZnO/FTO导电玻璃，其中 FTO为掺氟的氧化铟。
本发明的探测器结构，其制备方法详见实施例。
这种探测器提高了NiO中的载流子浓度，增加了电导率，增强了内建电场， 另一方面，减少了禁带宽度，吸收波长向长波方向移动，对微弱UVA近紫外光 有较高的灵敏度。
附图说明
以下结合附图和本发明的实施方式来作进一步详细说明
图1为本发明的结构示意图。
具体实施方式
实施例：
1)探测器的制备
本实施例中的氮掺杂氧化镍/氧化锌近紫外光探测器的结构为Ag电极1、 NiO:N层2(30nm)、ZnO层3(70nm)和FTO层4，其中ZnO、NiO:N、Ag 薄膜依次在多靶磁控溅射沉积系统中生长。衬底为FTO导电玻璃，方块电阻 6～10Ω，尺寸40×40mm2。靶材分别是金属银(Ag)、金属镍(Ni)和ZnO，溅 射气体为氩气、氧气和氮气，靶材和气体的纯度为99.999％。溅射腔的本底真空 为5×10-4Pa，靶材与衬底之间的距离为6.0～8.0cm，衬底温度为室温，工作气压 为0.1～0.5Pa。射频电源的频率为13.56MHz，溅射薄膜厚度由膜厚测量仪监控。
(1)衬底和靶材的清洗：首先用专用玻璃洗涤剂、丙酮、无水乙醇依次对 FTO导电玻璃衬底进行超声清洗，每次清洗后用去离子水冲洗多遍，最后用氮 气吹干后再放入溅射腔。靶材在放入溅射腔之前，依次用丙酮、乙醇进行清洗， 再用去离子水进行冲洗，再用氮气吹干。每次薄膜生长之前，先对靶材进行预溅 射10分钟，去除靶材表面的污染。
(2)ZnO薄膜生长：氩气为溅射工作气体，射频溅射功率为0.5～0.8W/cm2， ZnO薄膜厚度为70nm。
(3)氮掺杂氧化镍生长：ZnO薄膜生长完之后，打开氧气和氮气阀门，在 气体混合腔与氩气经过充分混合以后，进入溅射腔。氩气、氧气和氮气混合气体 的总流量为30sccm，其中氧气的流量5～10sccm，氮气的流量为0.2～2sccm。沉 积速率为1.35～1.50nm/min，沉积时间为7min，厚度为9.5～10.5nm。直流溅射 功率为0.1～0.2W/cm2，氮掺杂氧化镍薄膜为30nm。
(4)Ag电极的生长：利用掩膜板在NiO薄膜上面溅射一层指叉状的银电 极，溅射功率为2.0～3.0W/cm2，薄膜厚度为500nm。
(5)退火处理：所有薄膜生长完毕之后，在未破真空的情况下，样品在 200～250℃温度下原位退火3～5分钟。
2)性能测试
为了评估探测器的光电响应，使用波长为400nm的LED脉冲光源照射(从 Ag电极端入射)，光强为30μW/cm2，样品两端施加反向直流电压5V(FTO导 电层为电源正极)。探测器的响应时间如下：探测器的上升沿时间(从峰值的10％ 上升到90％所需时间)约为53ms，下降沿时间(从峰值的90％下降到10％所 需时间)约为120ms。相比于未掺杂的NiO/ZnO紫外探测器，响应时间缩短了 50～80％，响应波长向长波方向移动了将近100nm，而且在光强低至2μW/cm2的情况下，探测器的信噪比还比较高。
Claims (1)
1.氮掺杂氧化镍-氧化锌近紫外光探测器，其特征在于：具有如下的结构：
Ag/NiO:N/ZnO/FTO导电玻璃，其中FTO为掺氟的氧化铟。
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| CN110265504A (zh) * | 2019-07-01 | 2019-09-20 | 哈尔滨工业大学 | 一种紫外光电探测器及其制备方法 |
| CN112582486A (zh) * | 2020-12-15 | 2021-03-30 | 广西大学 | 一种NiO紫外光电探测器及其制备方法 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110265504A (zh) * | 2019-07-01 | 2019-09-20 | 哈尔滨工业大学 | 一种紫外光电探测器及其制备方法 |
| CN112582486A (zh) * | 2020-12-15 | 2021-03-30 | 广西大学 | 一种NiO紫外光电探测器及其制备方法 |
| CN112582486B (zh) * | 2020-12-15 | 2023-09-26 | 广西大学 | 一种NiO紫外光电探测器及其制备方法 |
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