CN113707760A - 一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法 - Google Patents
一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法 Download PDFInfo
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Abstract
本发明属于日盲紫外光探测器技术领域，公开了一种基于β‑Ga2O3/MgO异质结的三端口紫外光探测器制作方法，包括以下步骤：采用镂空的叉指电极掩膜板遮挡光敏层，采用磁控溅射的方法在β‑Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端，在MgO衬底背部溅射Ti/Au作为栅极G端，从而获得三端口的MSM结构的日盲探测器件。本发明实施例在(100)取向MgO衬底上能够生长出均匀分布的(00l)取向的β‑Ga2O3薄膜，晶格的匹配度高，晶格间结合紧密，外延层不易脱落；采用磁控溅射方法外延生长β‑Ga2O3薄膜层，工艺简单、易操作、可控性强，所得薄膜表面光滑、致密、厚度均匀，可用于批量的商业化制备，所得产品的性能稳定、重复性好。
Description
技术领域
本发明属于日盲紫外光探测器技术领域，特别涉及一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法。
背景技术
由于臭氧层的存在，几乎不存在波长介于200-280nm的紫外光(称之为日盲区)，针对该波段的信号探测被称为日盲紫外光探测。日盲紫外光探测器不受太阳光背景影响，可以全天候工作，具有灵敏度高、虚警率低等特点，工作在此波段的通信准确率也极高，在生物测试、臭氧空洞监测、航天航空等方面有广泛的应用。日盲紫外通信技术的核心是高灵敏度、低噪声的紫外光探测器件的研制。目前常用的基于光电倍增管的真空紫外光探测器件体积大、响应慢，而基于宽禁带半导体材料的紫外光探测器件则具有体积小、重量轻、增益高、响应快、噪声低、耐冲击、抗振动以及不受磁场影响等优点，特别适用于装备集成。因此，基于尺寸、功耗、成本和安全等因素的考虑，采用半导体探测器替代光电倍增管是一种比较理想的选择。近年来，得益于宽禁带半导体物理基础研究和材料制备工艺的进展和突破，为新型固态紫外光探测器件的开发带来了新的希望。
要实现日盲紫外光探测，器件核心半导体材料的禁带宽度要大于4.4eV(对应探测波长280nm)，近几年研究主要集中在AlGaN、MgZnO、Ga2O3等宽带禁带半导体材料上。理论上，三元合金AlGaN禁带宽度会随着Al组分的变化在3.4～6.2eV之间可调，要获得日盲区探测，AlGaN的Al组分需高于38％，但高Al含量的AlGaN薄膜需要极高温的生长环境且易发生异相分离。MgZnO在单晶纤维锌矿的结构下很难保持超过4.5eV的带隙，影响了它们在日盲探测领域的应用。而Ga2O3的禁带宽度约为4.9eV，正好对应于日盲区，室温下激子束缚能高达40～50meV，远高于室温热离化能(26meV)，并具有优异的热稳定性和化学稳定性，是制备日盲紫外光探测器件的天然理想材料。
目前基于Ga2O3材料的日盲紫外光探测的研究还处于起步阶段，基于Ga2O3单晶的日盲探测器件性能很好，但是单晶生长困难且价格昂贵。相对而言，基于Ga2O3薄膜的日盲紫外光探测器件的性能进步很快，由于β-Ga2O3单晶属于单斜晶系，自然界还缺乏能跟其晶格匹配度较高且制造成本较低的基底材料，虽然以c面蓝宝石(Al2O3)为基底能生长β-Ga2O3薄膜，但是在Al2O3衬底上异质外延生长高质量的β-Ga2O3薄膜难度仍然非常大，特别是在Al2O3衬底上生长获得的β-Ga2O3薄膜均为(-201)取向，基于该取向生长的β-Ga2O3薄膜制作的日盲紫外光探测器性能要弱于沿(00l)取向生长的β-Ga2O3基探测器。尽管基于(100)取向的MgAl2O4衬底上已经成功长成了β-Ga2O3薄膜，并制作成了相关的光电探测器，但(100)取向的MgAl2O4衬底不易获得，价格稍显昂贵。
发明内容
为解决上述技术问题，本发明提出一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法，利用磁控溅射沉积方法在氧化镁(MgO)衬底上外延生长(00l)取向氧化镓(β-Ga2O3)薄膜，获得β-Ga2O3/MgO异质结，并应用该异质薄膜制作日盲紫外光探测器。
本发明的技术方案是这样实现的：
在一个实施例中，公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，包括以下步骤：采用镂空的叉指电极掩膜板遮挡光敏层，采用磁控溅射的方法在β-Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端，在MgO衬底背部溅射Ti/Au作为栅极G端，从而获得三端口的MSM结构的日盲探测器件，从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极，β-Ga2O3薄膜用作光敏层，MgO层作为栅电极溅射层，金属Ti/Au层作为电极层。
根据本发明的优选实施方式，一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，包括以下步骤：
步骤(1)，取一片MgO晶片，将该晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡10～20分钟，取出后用流动的去离子水冲洗残留的试剂，最后用干燥的氮气吹干，获得的晶片作为衬底片；
步骤(2)，将衬底片放入沉积室，以纯度为99.99％的Ga2O3陶瓷为靶材，采用磁控溅射方法在其表层上外延生长β-Ga2O3薄膜层；
步骤(3)，将β-Ga2O3薄膜层用镂空的叉指电极掩膜板遮挡表面，采用磁控溅射方法在薄膜表面溅射金属Ti层，然后在Ti层基础上溅射金属Au层获得Ti/Au叉指金属电极，上述叉指金属电极分别作为晶体管的S端和D端使用；采用同样的方法，在衬底MgO表面分别溅射Ti/Au层，作为三端口晶体器件的栅极G端。
根据本发明的优选实施方式，所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：背底压强小于1×10-4Pa。
根据本发明的优选实施方式，所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：衬底温度为750℃。
根据本发明的优选实施方式，所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：工作气氛为Ar气，气压为1Pa。
根据本发明的优选实施方式，所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：溅射功率为80W，溅射时间为100分钟。
根据本发明的优选实施方式，所述步骤(3)中，溅射条件设置如下：背底真空为1×10-4Pa。
根据本发明的优选实施方式，所述步骤(3)中，溅射条件设置如下：衬底温度保持室温。
根据本发明的优选实施方式，所述步骤(3)中，溅射条件设置如下：工作气氛为Ar气，气压为3Pa。
根据本发明的优选实施方式，所述步骤(3)中，溅射条件设置如下：溅射功率为40W，金属Ti/Au层的溅射时间分别为10s/20s。
根据本发明的优选实施方式，所述电极的溅射过程中的溅射功率设定为40W，10nm厚的金属Ti层的溅射时间为10s，20nm厚的金属Au层的溅射时间为20s。
在另一个实施例中，还公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器，从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极，β-Ga2O3薄膜用作光敏层，MgO层作为栅电极溅射层，金属Ti/Au层作为电极层。
作为设计，本发明以结晶度更高、价格更低的(100)取向的MgO为衬底，获得的β-Ga2O3/MgO异质结结合紧密，晶格匹配度高，电子传输速度快。
作为设计，利用磁控溅射方法生长(00l)取向的β-Ga2O3薄膜作为光敏层，光的响应度更高。
本发明的优势在于：
1.本发明所涉原材料容易获取，薄膜的制备过程简单。所用MgO衬底为商业产品，可批量购买；在(100)取向MgO衬底上能够生长出均匀分布的(00l)取向的β-Ga2O3薄膜，晶格的匹配度高，晶格间结合紧密，外延层不易脱落；采用磁控溅射方法外延生长β-Ga2O3薄膜层，工艺简单、易操作、可控性强，所得薄膜表面光滑、致密、厚度均匀，可用于批量的商业化制备，所得产品的性能稳定、重复性好。
2.本发明所得的MSM结构的β-Ga2O3薄膜日盲紫外光电探测器响应度高，响度速度快，暗电流小，制作工艺简单，具有广阔的市场前景。
3.本发明所得的带有背栅电极的三端口MSM结构的β-Ga2O3薄膜日盲紫外光探测器，通过调节栅极电压的大小调节β-Ga2O3薄膜上感生载流子的数量，从而提高探测器的响应速度，减小光电流的上升和下降时间，使探测器件具有更高的灵敏度。
附图说明
图1是通过本发明方法制作的β-Ga2O3/MgO异质薄膜基三端口探测器结构示意图；
图2是用本发明方法制得的β-Ga2O3/MgO薄膜的XRD图；
图3是用本发明方法制得的β-Ga2O3薄膜的紫外可见光谱图；
图4是用本发明方法制得的β-Ga2O3薄膜的扫描电子显微镜图；
图5是用本发明方法制得的β-Ga2O3/MgO异质薄膜基探测器在黑暗，365nm及254nm光照下的I-V曲线图；
图6是用本发明方法制得的探测器在10V栅极电压(黑暗情况下)及10V、0V栅极电压(254nm光照、光强为0.6mW/cm2)的电流输出特性曲线图；
图7是本发明方法制得的β-Ga2O3/MgO异质薄膜基日盲紫外光探测器在5V偏压及254nm光照下的I-t曲线图。
具体实施方式
总的来说，本发明提出一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，采用磁控溅射技术，生长的工艺条件简单可控，所制作的探测器性能稳定。
在一个实施例中，公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，包括以下步骤：采用镂空的叉指电极掩膜板遮挡光敏层，采用磁控溅射的方法在β-Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端，在MgO衬底背部溅射Ti/Au作为栅极G端，从而获得三端口的MSM结构的日盲探测器件。
本实施例中，日盲探测器件从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极，β-Ga2O3薄膜用作光敏层，MgO层作为栅电极溅射层，金属Ti/Au层作为电极层。
本实施例在MgO衬底上沿(00l)取向外延生长了β-Ga2O3薄膜材料，获得了β-Ga2O3/MgO异质薄膜，通过在该薄膜的β-Ga2O3表面溅射Ti/Au叉指金属电极，分别作为晶体管电极的S端和D端，在MgO衬底背部溅射Ti/Au作为栅极G端，完成了β-Ga2O3/MgO异质薄膜基金属-半导体-金属(MSM)结构三端口日盲紫外光探测器的制作。
在一个实施例中，上述基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，具体包括以下步骤：
步骤(1)，取一片MgO晶片，将该晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡10～20分钟，取出后用流动的去离子水冲洗残留的试剂，最后用干燥的氮气吹干，获得的晶片作为衬底片；
步骤(2)，将衬底片放入沉积室，以纯度为99.99％的Ga2O3陶瓷为靶材，采用磁控溅射方法在其表层上外延生长β-Ga2O3薄膜层；
步骤(3)，将β-Ga2O3薄膜层用镂空的叉指电极掩膜板遮挡表面，采用磁控溅射方法在薄膜表面溅射金属Ti层，然后在Ti层基础上溅射金属Au层获得Ti/Au叉指金属电极，上述叉指金属电极分别作为晶体管的S端和D端使用；采用同样的方法，在衬底MgO表面分别溅射Ti/Au层，作为三端口晶体器件的栅极G端。
以下结合实例进一步说明本发明的实现过程。
结合图1，取一片大小为10mm×10mm×0.5mm、(100)取向的MgO晶片10，将晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡15分钟，取出后再用流动的去离子水冲洗，最后用干燥的氮气吹干，经此过程处理后的晶片作为衬底，等待下一步使用。将上述清洗干净的MgO衬底10放入沉积室，以纯度为99.99％的Ga2O3陶瓷为靶材，采用磁控溅射在其上生长β-Ga2O3薄膜20，设置磁控溅射技术的生长参数如下：背底真空压强小于1×10-4Pa，工作气氛为Ar气(气压为1Pa)，衬底温度为750℃，溅射功率为80W，溅射时间为100分钟，得到的β-Ga2O3薄膜的厚度为150nm。在上述制备的β-Ga2O3薄膜表面用镂空的叉指电极掩膜板遮挡，采用磁控溅射方法在β-Ga2O3薄膜表面先后溅射厚度分别为10nm和20nm的金属Ti和金属Au层，获得Ti/Au叉指电极，叉指金属电极的面积为2800μm×200μm、各叉指的间距为200μm、光敏面积为2800μm×1200μm。溅射工艺条件如下：背底真空为1×10-4Pa，衬底温度为室温，工作气氛为Ar气(气压为3Pa)，溅射功率为40W，Ti层和Au层的溅射时间分别为10s和20s。叉指金属电极分别作为三端口场效应管的S端和D端使用。采用同样的技术方法，在衬底MgO表面先后溅射10nm/20nm的Ti/Au，作为三端口器件的栅极G使用。
通过上述步骤即可获得β-Ga2O3/MgO异质薄膜基探测器，外型结构如图1所示。在叉指电极两侧外加5V偏压，电流则从正电极流入，通过光敏层β-Ga2O3薄膜，从负电极流出，实现纵向金属-半导体-金属(MSM)型探测器的基本功能。图2给出了β-Ga2O3/MgO薄膜的XRD结果，除去MgO衬底的(200)衍射峰外，有且仅有β-Ga2O3(400)衍射峰，说明所有的样品都是沿着(00l)晶面外延生长的β相Ga2O3薄膜。图3给出了β-Ga2O3薄膜的紫外可见光吸收谱，从图中可以看出，薄膜的吸收边都在260nm左右，具有明显的日盲紫外光敏感特性。图4给出了β-Ga2O3薄膜的扫描电子显微镜图，可以看出薄膜表面均呈现出颗粒状，颗粒与颗粒存在清晰的界面。
图5给出了该β-Ga2O3/MgO异质薄膜基探测器在黑暗，365nm及254nm(光强为0.6mW/cm2)光照下的I-V曲线。在黑暗和365nm的光照下，β-Ga2O3薄膜基探测器的电流都非常小。而在光强为0.6mW/cm2的254nm光照下，随着正向偏压的增加，光电流有着明显的增加。在5V正向偏压下，探测器的电流从黑暗情况下的0.65nA增加至954.4nA，光暗比I254/Idark为1468，表明该异质薄膜材料对254nm的紫外光具有强烈的响应，响应度最高达158.9A/W；而对365nm的光不敏感，几乎无响应，显示出明显的日盲紫外光探测特性。
图6给出了该探测器在10V栅极电压、黑暗情况下及10V和0V栅极电压、254nm光照下(光强为0.6mW/cm2)的电流输出特性曲线。由光电流的输出特点可知，该探测器在254nm的光照下，出现了明显的光电流，并且电流强度随着正向偏压的增加不断增强；同时，当栅极施加电压时，光电流明显增加，表明光电流的强度还受到了栅极电压的调制作用。该器件显示出了典型的肖特基势垒光电晶体管的特点。
图7给出了该探测器在5V偏压及波长为254nm光照下(光强为0.6mW/cm2)通过不断灯开、灯关测得的I-t曲线。通过6次I-t循环测试，显示出该器件具有良好的重复性和稳定性。利用指数松弛方程对测试结果进行进一步拟合，从而获得该探测器的上升响应时间τr及衰减时间τd分别为0.957s和0.096s。
在另一个实施例中，还公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器，从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极，β-Ga2O3薄膜用作光敏层，MgO层作为栅电极溅射层，金属Ti/Au层作为电极层。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明。应强调的是，以上所述仅为本发明的具体实施例之一，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，包括以下步骤：采用镂空的叉指电极掩膜板遮挡光敏层，采用磁控溅射的方法在β-Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端，在MgO衬底背部溅射Ti/Au作为栅极G端，从而获得三端口的MSM结构的日盲探测器件。
2.如权利要求1所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，包括以下步骤：
步骤(1)，取一片MgO晶片，将该晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡10～20分钟，取出后用流动的去离子水冲洗残留的试剂，最后用干燥的氮气吹干，获得的晶片作为衬底片；
步骤(2)，将衬底片放入沉积室，以纯度为99.99％的Ga2O3陶瓷为靶材，采用磁控溅射方法在其表层上外延生长β-Ga2O3薄膜层；
步骤(3)，将β-Ga2O3薄膜层用镂空的叉指电极掩膜板遮挡表面，采用磁控溅射方法在薄膜表面溅射金属Ti层，然后在Ti层基础上溅射金属Au层获得Ti/Au叉指金属电极，上述叉指金属电极分别作为晶体管的S端和D端使用；采用同样的方法，在衬底MgO表面分别溅射Ti/Au层，作为三端口晶体器件的栅极G端。
3.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，
所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：背底压强小于1×10- 4Pa。
4.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，
所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：衬底温度为750℃。
5.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，
所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：工作气氛为Ar气，气压为1Pa。
6.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，
所述步骤(2)中，β-Ga2O3薄膜层生长过程的具体参数设置如下：溅射功率为80W，溅射时间为100分钟。
7.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，
所述步骤(3)中，溅射条件设置如下：背底真空为1×10-4Pa。
8.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，
所述步骤(3)中，溅射条件设置如下：衬底温度保持室温。
9.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法，其特征在于，
所述步骤(3)中，溅射条件设置如下：工作气氛为Ar气，气压为3Pa，溅射功率为40W，金属Ti/Au层的溅射时间分别为10s/20s。
10.一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器，其特征在于，从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极，β-Ga2O3薄膜用作光敏层，MgO层作为栅电极溅射层，金属Ti/Au层作为电极层。
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| CN114823930A (zh) * | 2022-03-24 | 2022-07-29 | 电子科技大学 | 基于MgO钝化的非晶Ga2O3日盲紫外探测器及其制备方法 |
| CN115579405A (zh) * | 2022-09-27 | 2023-01-06 | 山东大学 | 一种磁控溅射非晶氧化镓光电薄膜晶体管及其制备方法与应用 |
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