CN113707760A - 一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法 - Google Patents
一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法 Download PDFInfo
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Abstract
本发明属于日盲紫外光探测器技术领域,公开了一种基于β‑Ga2O3/MgO异质结的三端口紫外光探测器制作方法,包括以下步骤:采用镂空的叉指电极掩膜板遮挡光敏层,采用磁控溅射的方法在β‑Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端,在MgO衬底背部溅射Ti/Au作为栅极G端,从而获得三端口的MSM结构的日盲探测器件。本发明实施例在(100)取向MgO衬底上能够生长出均匀分布的(00l)取向的β‑Ga2O3薄膜,晶格的匹配度高,晶格间结合紧密,外延层不易脱落;采用磁控溅射方法外延生长β‑Ga2O3薄膜层,工艺简单、易操作、可控性强,所得薄膜表面光滑、致密、厚度均匀,可用于批量的商业化制备,所得产品的性能稳定、重复性好。
Description
技术领域
本发明属于日盲紫外光探测器技术领域,特别涉及一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法。
背景技术
由于臭氧层的存在,几乎不存在波长介于200-280nm的紫外光(称之为日盲区),针对该波段的信号探测被称为日盲紫外光探测。日盲紫外光探测器不受太阳光背景影响,可以全天候工作,具有灵敏度高、虚警率低等特点,工作在此波段的通信准确率也极高,在生物测试、臭氧空洞监测、航天航空等方面有广泛的应用。日盲紫外通信技术的核心是高灵敏度、低噪声的紫外光探测器件的研制。目前常用的基于光电倍增管的真空紫外光探测器件体积大、响应慢,而基于宽禁带半导体材料的紫外光探测器件则具有体积小、重量轻、增益高、响应快、噪声低、耐冲击、抗振动以及不受磁场影响等优点,特别适用于装备集成。因此,基于尺寸、功耗、成本和安全等因素的考虑,采用半导体探测器替代光电倍增管是一种比较理想的选择。近年来,得益于宽禁带半导体物理基础研究和材料制备工艺的进展和突破,为新型固态紫外光探测器件的开发带来了新的希望。
要实现日盲紫外光探测,器件核心半导体材料的禁带宽度要大于4.4eV(对应探测波长280nm),近几年研究主要集中在AlGaN、MgZnO、Ga2O3等宽带禁带半导体材料上。理论上,三元合金AlGaN禁带宽度会随着Al组分的变化在3.4~6.2eV之间可调,要获得日盲区探测,AlGaN的Al组分需高于38%,但高Al含量的AlGaN薄膜需要极高温的生长环境且易发生异相分离。MgZnO在单晶纤维锌矿的结构下很难保持超过4.5eV的带隙,影响了它们在日盲探测领域的应用。而Ga2O3的禁带宽度约为4.9eV,正好对应于日盲区,室温下激子束缚能高达40~50meV,远高于室温热离化能(26meV),并具有优异的热稳定性和化学稳定性,是制备日盲紫外光探测器件的天然理想材料。
目前基于Ga2O3材料的日盲紫外光探测的研究还处于起步阶段,基于Ga2O3单晶的日盲探测器件性能很好,但是单晶生长困难且价格昂贵。相对而言,基于Ga2O3薄膜的日盲紫外光探测器件的性能进步很快,由于β-Ga2O3单晶属于单斜晶系,自然界还缺乏能跟其晶格匹配度较高且制造成本较低的基底材料,虽然以c面蓝宝石(Al2O3)为基底能生长β-Ga2O3薄膜,但是在Al2O3衬底上异质外延生长高质量的β-Ga2O3薄膜难度仍然非常大,特别是在Al2O3衬底上生长获得的β-Ga2O3薄膜均为(-201)取向,基于该取向生长的β-Ga2O3薄膜制作的日盲紫外光探测器性能要弱于沿(00l)取向生长的β-Ga2O3基探测器。尽管基于(100)取向的MgAl2O4衬底上已经成功长成了β-Ga2O3薄膜,并制作成了相关的光电探测器,但(100)取向的MgAl2O4衬底不易获得,价格稍显昂贵。
发明内容
为解决上述技术问题,本发明提出一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器及其制作方法,利用磁控溅射沉积方法在氧化镁(MgO)衬底上外延生长(00l)取向氧化镓(β-Ga2O3)薄膜,获得β-Ga2O3/MgO异质结,并应用该异质薄膜制作日盲紫外光探测器。
本发明的技术方案是这样实现的:
在一个实施例中,公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,包括以下步骤:采用镂空的叉指电极掩膜板遮挡光敏层,采用磁控溅射的方法在β-Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端,在MgO衬底背部溅射Ti/Au作为栅极G端,从而获得三端口的MSM结构的日盲探测器件,从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极,β-Ga2O3薄膜用作光敏层,MgO层作为栅电极溅射层,金属Ti/Au层作为电极层。
根据本发明的优选实施方式,一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,包括以下步骤:
步骤(1),取一片MgO晶片,将该晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡10~20分钟,取出后用流动的去离子水冲洗残留的试剂,最后用干燥的氮气吹干,获得的晶片作为衬底片;
步骤(2),将衬底片放入沉积室,以纯度为99.99%的Ga2O3陶瓷为靶材,采用磁控溅射方法在其表层上外延生长β-Ga2O3薄膜层;
步骤(3),将β-Ga2O3薄膜层用镂空的叉指电极掩膜板遮挡表面,采用磁控溅射方法在薄膜表面溅射金属Ti层,然后在Ti层基础上溅射金属Au层获得Ti/Au叉指金属电极,上述叉指金属电极分别作为晶体管的S端和D端使用;采用同样的方法,在衬底MgO表面分别溅射Ti/Au层,作为三端口晶体器件的栅极G端。
根据本发明的优选实施方式,所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:背底压强小于1×10-4Pa。
根据本发明的优选实施方式,所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:衬底温度为750℃。
根据本发明的优选实施方式,所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:工作气氛为Ar气,气压为1Pa。
根据本发明的优选实施方式,所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:溅射功率为80W,溅射时间为100分钟。
根据本发明的优选实施方式,所述步骤(3)中,溅射条件设置如下:背底真空为1×10-4Pa。
根据本发明的优选实施方式,所述步骤(3)中,溅射条件设置如下:衬底温度保持室温。
根据本发明的优选实施方式,所述步骤(3)中,溅射条件设置如下:工作气氛为Ar气,气压为3Pa。
根据本发明的优选实施方式,所述步骤(3)中,溅射条件设置如下:溅射功率为40W,金属Ti/Au层的溅射时间分别为10s/20s。
根据本发明的优选实施方式,所述电极的溅射过程中的溅射功率设定为40W,10nm厚的金属Ti层的溅射时间为10s,20nm厚的金属Au层的溅射时间为20s。
在另一个实施例中,还公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器,从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极,β-Ga2O3薄膜用作光敏层,MgO层作为栅电极溅射层,金属Ti/Au层作为电极层。
作为设计,本发明以结晶度更高、价格更低的(100)取向的MgO为衬底,获得的β-Ga2O3/MgO异质结结合紧密,晶格匹配度高,电子传输速度快。
作为设计,利用磁控溅射方法生长(00l)取向的β-Ga2O3薄膜作为光敏层,光的响应度更高。
本发明的优势在于:
1.本发明所涉原材料容易获取,薄膜的制备过程简单。所用MgO衬底为商业产品,可批量购买;在(100)取向MgO衬底上能够生长出均匀分布的(00l)取向的β-Ga2O3薄膜,晶格的匹配度高,晶格间结合紧密,外延层不易脱落;采用磁控溅射方法外延生长β-Ga2O3薄膜层,工艺简单、易操作、可控性强,所得薄膜表面光滑、致密、厚度均匀,可用于批量的商业化制备,所得产品的性能稳定、重复性好。
2.本发明所得的MSM结构的β-Ga2O3薄膜日盲紫外光电探测器响应度高,响度速度快,暗电流小,制作工艺简单,具有广阔的市场前景。
3.本发明所得的带有背栅电极的三端口MSM结构的β-Ga2O3薄膜日盲紫外光探测器,通过调节栅极电压的大小调节β-Ga2O3薄膜上感生载流子的数量,从而提高探测器的响应速度,减小光电流的上升和下降时间,使探测器件具有更高的灵敏度。
附图说明
图1是通过本发明方法制作的β-Ga2O3/MgO异质薄膜基三端口探测器结构示意图;
图2是用本发明方法制得的β-Ga2O3/MgO薄膜的XRD图;
图3是用本发明方法制得的β-Ga2O3薄膜的紫外可见光谱图;
图4是用本发明方法制得的β-Ga2O3薄膜的扫描电子显微镜图;
图5是用本发明方法制得的β-Ga2O3/MgO异质薄膜基探测器在黑暗,365nm及254nm光照下的I-V曲线图;
图6是用本发明方法制得的探测器在10V栅极电压(黑暗情况下)及10V、0V栅极电压(254nm光照、光强为0.6mW/cm2)的电流输出特性曲线图;
图7是本发明方法制得的β-Ga2O3/MgO异质薄膜基日盲紫外光探测器在5V偏压及254nm光照下的I-t曲线图。
具体实施方式
总的来说,本发明提出一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,采用磁控溅射技术,生长的工艺条件简单可控,所制作的探测器性能稳定。
在一个实施例中,公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,包括以下步骤:采用镂空的叉指电极掩膜板遮挡光敏层,采用磁控溅射的方法在β-Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端,在MgO衬底背部溅射Ti/Au作为栅极G端,从而获得三端口的MSM结构的日盲探测器件。
本实施例中,日盲探测器件从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极,β-Ga2O3薄膜用作光敏层,MgO层作为栅电极溅射层,金属Ti/Au层作为电极层。
本实施例在MgO衬底上沿(00l)取向外延生长了β-Ga2O3薄膜材料,获得了β-Ga2O3/MgO异质薄膜,通过在该薄膜的β-Ga2O3表面溅射Ti/Au叉指金属电极,分别作为晶体管电极的S端和D端,在MgO衬底背部溅射Ti/Au作为栅极G端,完成了β-Ga2O3/MgO异质薄膜基金属-半导体-金属(MSM)结构三端口日盲紫外光探测器的制作。
在一个实施例中,上述基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,具体包括以下步骤:
步骤(1),取一片MgO晶片,将该晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡10~20分钟,取出后用流动的去离子水冲洗残留的试剂,最后用干燥的氮气吹干,获得的晶片作为衬底片;
步骤(2),将衬底片放入沉积室,以纯度为99.99%的Ga2O3陶瓷为靶材,采用磁控溅射方法在其表层上外延生长β-Ga2O3薄膜层;
步骤(3),将β-Ga2O3薄膜层用镂空的叉指电极掩膜板遮挡表面,采用磁控溅射方法在薄膜表面溅射金属Ti层,然后在Ti层基础上溅射金属Au层获得Ti/Au叉指金属电极,上述叉指金属电极分别作为晶体管的S端和D端使用;采用同样的方法,在衬底MgO表面分别溅射Ti/Au层,作为三端口晶体器件的栅极G端。
以下结合实例进一步说明本发明的实现过程。
结合图1,取一片大小为10mm×10mm×0.5mm、(100)取向的MgO晶片10,将晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡15分钟,取出后再用流动的去离子水冲洗,最后用干燥的氮气吹干,经此过程处理后的晶片作为衬底,等待下一步使用。将上述清洗干净的MgO衬底10放入沉积室,以纯度为99.99%的Ga2O3陶瓷为靶材,采用磁控溅射在其上生长β-Ga2O3薄膜20,设置磁控溅射技术的生长参数如下:背底真空压强小于1×10-4Pa,工作气氛为Ar气(气压为1Pa),衬底温度为750℃,溅射功率为80W,溅射时间为100分钟,得到的β-Ga2O3薄膜的厚度为150nm。在上述制备的β-Ga2O3薄膜表面用镂空的叉指电极掩膜板遮挡,采用磁控溅射方法在β-Ga2O3薄膜表面先后溅射厚度分别为10nm和20nm的金属Ti和金属Au层,获得Ti/Au叉指电极,叉指金属电极的面积为2800μm×200μm、各叉指的间距为200μm、光敏面积为2800μm×1200μm。溅射工艺条件如下:背底真空为1×10-4Pa,衬底温度为室温,工作气氛为Ar气(气压为3Pa),溅射功率为40W,Ti层和Au层的溅射时间分别为10s和20s。叉指金属电极分别作为三端口场效应管的S端和D端使用。采用同样的技术方法,在衬底MgO表面先后溅射10nm/20nm的Ti/Au,作为三端口器件的栅极G使用。
通过上述步骤即可获得β-Ga2O3/MgO异质薄膜基探测器,外型结构如图1所示。在叉指电极两侧外加5V偏压,电流则从正电极流入,通过光敏层β-Ga2O3薄膜,从负电极流出,实现纵向金属-半导体-金属(MSM)型探测器的基本功能。图2给出了β-Ga2O3/MgO薄膜的XRD结果,除去MgO衬底的(200)衍射峰外,有且仅有β-Ga2O3(400)衍射峰,说明所有的样品都是沿着(00l)晶面外延生长的β相Ga2O3薄膜。图3给出了β-Ga2O3薄膜的紫外可见光吸收谱,从图中可以看出,薄膜的吸收边都在260nm左右,具有明显的日盲紫外光敏感特性。图4给出了β-Ga2O3薄膜的扫描电子显微镜图,可以看出薄膜表面均呈现出颗粒状,颗粒与颗粒存在清晰的界面。
图5给出了该β-Ga2O3/MgO异质薄膜基探测器在黑暗,365nm及254nm(光强为0.6mW/cm2)光照下的I-V曲线。在黑暗和365nm的光照下,β-Ga2O3薄膜基探测器的电流都非常小。而在光强为0.6mW/cm2的254nm光照下,随着正向偏压的增加,光电流有着明显的增加。在5V正向偏压下,探测器的电流从黑暗情况下的0.65nA增加至954.4nA,光暗比I254/Idark为1468,表明该异质薄膜材料对254nm的紫外光具有强烈的响应,响应度最高达158.9A/W;而对365nm的光不敏感,几乎无响应,显示出明显的日盲紫外光探测特性。
图6给出了该探测器在10V栅极电压、黑暗情况下及10V和0V栅极电压、254nm光照下(光强为0.6mW/cm2)的电流输出特性曲线。由光电流的输出特点可知,该探测器在254nm的光照下,出现了明显的光电流,并且电流强度随着正向偏压的增加不断增强;同时,当栅极施加电压时,光电流明显增加,表明光电流的强度还受到了栅极电压的调制作用。该器件显示出了典型的肖特基势垒光电晶体管的特点。
图7给出了该探测器在5V偏压及波长为254nm光照下(光强为0.6mW/cm2)通过不断灯开、灯关测得的I-t曲线。通过6次I-t循环测试,显示出该器件具有良好的重复性和稳定性。利用指数松弛方程对测试结果进行进一步拟合,从而获得该探测器的上升响应时间τr及衰减时间τd分别为0.957s和0.096s。
在另一个实施例中,还公开了一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器,从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极,β-Ga2O3薄膜用作光敏层,MgO层作为栅电极溅射层,金属Ti/Au层作为电极层。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明。应强调的是,以上所述仅为本发明的具体实施例之一,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,包括以下步骤:采用镂空的叉指电极掩膜板遮挡光敏层,采用磁控溅射的方法在β-Ga2O3薄膜表面溅射Ti/Au叉指金属电极作为晶体管电极的S端和D端,在MgO衬底背部溅射Ti/Au作为栅极G端,从而获得三端口的MSM结构的日盲探测器件。
2.如权利要求1所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,包括以下步骤:
步骤(1),取一片MgO晶片,将该晶片依次在丙酮、无水乙醇、去离子水中分别超声浸泡10~20分钟,取出后用流动的去离子水冲洗残留的试剂,最后用干燥的氮气吹干,获得的晶片作为衬底片;
步骤(2),将衬底片放入沉积室,以纯度为99.99%的Ga2O3陶瓷为靶材,采用磁控溅射方法在其表层上外延生长β-Ga2O3薄膜层;
步骤(3),将β-Ga2O3薄膜层用镂空的叉指电极掩膜板遮挡表面,采用磁控溅射方法在薄膜表面溅射金属Ti层,然后在Ti层基础上溅射金属Au层获得Ti/Au叉指金属电极,上述叉指金属电极分别作为晶体管的S端和D端使用;采用同样的方法,在衬底MgO表面分别溅射Ti/Au层,作为三端口晶体器件的栅极G端。
3.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,
所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:背底压强小于1×10- 4Pa。
4.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,
所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:衬底温度为750℃。
5.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,
所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:工作气氛为Ar气,气压为1Pa。
6.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,
所述步骤(2)中,β-Ga2O3薄膜层生长过程的具体参数设置如下:溅射功率为80W,溅射时间为100分钟。
7.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,
所述步骤(3)中,溅射条件设置如下:背底真空为1×10-4Pa。
8.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,
所述步骤(3)中,溅射条件设置如下:衬底温度保持室温。
9.如权利要求2所述的一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器制作方法,其特征在于,
所述步骤(3)中,溅射条件设置如下:工作气氛为Ar气,气压为3Pa,溅射功率为40W,金属Ti/Au层的溅射时间分别为10s/20s。
10.一种基于β-Ga2O3/MgO异质结的三端口紫外光探测器,其特征在于,从下到上分别是Ti/Au背栅电极、MgO衬底、β-Ga2O3薄膜、Ti/Au叉指金属电极,β-Ga2O3薄膜用作光敏层,MgO层作为栅电极溅射层,金属Ti/Au层作为电极层。
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Cited By (3)
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---|---|---|---|---|
CN114582994A (zh) * | 2022-03-04 | 2022-06-03 | 仲恺农业工程学院 | 一种超宽禁带非晶MgGaO真空紫外光伏探测器 |
CN114823930A (zh) * | 2022-03-24 | 2022-07-29 | 电子科技大学 | 基于MgO钝化的非晶Ga2O3日盲紫外探测器及其制备方法 |
CN115579405A (zh) * | 2022-09-27 | 2023-01-06 | 山东大学 | 一种磁控溅射非晶氧化镓光电薄膜晶体管及其制备方法与应用 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870225A (zh) * | 2016-03-31 | 2016-08-17 | 张权岳 | 一种单片集成的多功能紫外/日盲紫外双色探测器及其制备方法 |
CN108470675A (zh) * | 2018-02-28 | 2018-08-31 | 唐为华 | 一种Si基氧化镓薄膜背栅极日盲紫外光晶体管及其制备方法 |
CN108666395A (zh) * | 2018-05-24 | 2018-10-16 | 北京邮电大学 | 基于非晶氧化镓薄膜的日盲紫外光电探测器及其制备方法 |
CN109037386A (zh) * | 2018-07-20 | 2018-12-18 | 北京镓族科技有限公司 | 基于氧化镁衬底的氧化镓薄膜光电探测器及其制造方法 |
CN109256438A (zh) * | 2018-09-26 | 2019-01-22 | 北京镓族科技有限公司 | 一种硅基非晶氧化镓薄膜日盲光电晶体管及其制造方法 |
CN109742180A (zh) * | 2018-12-28 | 2019-05-10 | 中国科学院宁波材料技术与工程研究所 | 一种基于非晶氧化镓基薄膜晶体管的深紫外光电探测器 |
CN110571301A (zh) * | 2019-07-31 | 2019-12-13 | 中国科学技术大学 | 氧化镓基日盲探测器及其制备方法 |
CN111524998A (zh) * | 2020-05-07 | 2020-08-11 | 西安电子科技大学 | 太阳光盲区肖特基背栅金属氧化物半导体场效应光电晶体管 |
CN111628019A (zh) * | 2020-06-28 | 2020-09-04 | 中国科学院长春光学精密机械与物理研究所 | 一种三氧化二镓日盲紫外探测器及其制备方法 |
-
2021
- 2021-07-20 CN CN202110817810.6A patent/CN113707760A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870225A (zh) * | 2016-03-31 | 2016-08-17 | 张权岳 | 一种单片集成的多功能紫外/日盲紫外双色探测器及其制备方法 |
CN108470675A (zh) * | 2018-02-28 | 2018-08-31 | 唐为华 | 一种Si基氧化镓薄膜背栅极日盲紫外光晶体管及其制备方法 |
CN108666395A (zh) * | 2018-05-24 | 2018-10-16 | 北京邮电大学 | 基于非晶氧化镓薄膜的日盲紫外光电探测器及其制备方法 |
CN109037386A (zh) * | 2018-07-20 | 2018-12-18 | 北京镓族科技有限公司 | 基于氧化镁衬底的氧化镓薄膜光电探测器及其制造方法 |
CN109256438A (zh) * | 2018-09-26 | 2019-01-22 | 北京镓族科技有限公司 | 一种硅基非晶氧化镓薄膜日盲光电晶体管及其制造方法 |
CN109742180A (zh) * | 2018-12-28 | 2019-05-10 | 中国科学院宁波材料技术与工程研究所 | 一种基于非晶氧化镓基薄膜晶体管的深紫外光电探测器 |
CN110571301A (zh) * | 2019-07-31 | 2019-12-13 | 中国科学技术大学 | 氧化镓基日盲探测器及其制备方法 |
CN111524998A (zh) * | 2020-05-07 | 2020-08-11 | 西安电子科技大学 | 太阳光盲区肖特基背栅金属氧化物半导体场效应光电晶体管 |
CN111628019A (zh) * | 2020-06-28 | 2020-09-04 | 中国科学院长春光学精密机械与物理研究所 | 一种三氧化二镓日盲紫外探测器及其制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114582994A (zh) * | 2022-03-04 | 2022-06-03 | 仲恺农业工程学院 | 一种超宽禁带非晶MgGaO真空紫外光伏探测器 |
CN114823930A (zh) * | 2022-03-24 | 2022-07-29 | 电子科技大学 | 基于MgO钝化的非晶Ga2O3日盲紫外探测器及其制备方法 |
CN114823930B (zh) * | 2022-03-24 | 2023-04-11 | 电子科技大学 | 基于MgO钝化的非晶Ga2O3日盲紫外探测器及其制备方法 |
CN115579405A (zh) * | 2022-09-27 | 2023-01-06 | 山东大学 | 一种磁控溅射非晶氧化镓光电薄膜晶体管及其制备方法与应用 |
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