CN110660683A - 支撑info封装件以减小翘曲 - Google Patents

支撑info封装件以减小翘曲 Download PDF

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Publication number
CN110660683A
CN110660683A CN201811292790.XA CN201811292790A CN110660683A CN 110660683 A CN110660683 A CN 110660683A CN 201811292790 A CN201811292790 A CN 201811292790A CN 110660683 A CN110660683 A CN 110660683A
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China
Prior art keywords
die
package
device die
dummy support
bridge
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CN201811292790.XA
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CN110660683B (zh
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陈洁
陈英儒
陈宪伟
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种方法包括将第一器件管芯和第二器件管芯包封在包封材料中，在第一器件管芯和第二器件管芯上形成再分布线，再分布线电耦合到第一器件管芯和第二器件管芯，以及在再分布线上接合桥接管芯以形成封装件，封装件包括第一器件管芯、第二器件管芯和桥接管芯。桥接管芯电互连第一器件管芯和第二器件管芯。第一器件管芯、第二器件管芯和桥接管芯由伪支撑管芯支撑。本发明的实施例还涉及支撑InFO封装件以减小翘曲。

Description

支撑INFO封装件以减小翘曲
技术领域
本发明的实施例涉及支撑InFO封装件以减小翘曲。
背景技术
随着半导体技术的发展，半导体芯片/管芯变得越来越小。同时，需要将更多功能集成到半导体管芯中。因此，半导体管芯需要具有越来越多的封装到更小区域中的I/O焊盘，并且I/O焊盘的密度随时间快速上升。结果，半导体管芯的封装变得更加困难，这不利地影响了封装的产量。
传统的封装技术可以分为两类。在第一类中，晶圆上的管芯在锯切之前被封装。这种封装技术具有一些有利的特征，例如更高的产量和更低的成本。此外，需要较少的底部填充物或模塑料。然而，这种封装技术也存在缺点。由于管芯的尺寸变得越来越小，并且各个封装件只能是扇入型封装件，其中每个管芯的I/O焊盘限于直接位于相应管芯的表面上方的区域。由于管芯的有限区域，由于I/O焊盘的间距的限制，I/O焊盘的数量受到限制。如果要减小焊盘的间距，则可能发生焊料桥接。另外，焊球必须具有一定的尺寸，这进而限制了可以封装在管芯的表面上的焊球的数量。
在另一类封装中，在封装之前从晶圆锯切管芯。这种封装技术的一个有利特点是可以形成扇出封装件，这意味着管芯上的I/O焊盘可以重新分配到比管芯更大的区域，因此封装在管芯的表面上的I/O焊盘的数量可以增大。该封装技术的另一个有利特征是封装了“已知良好管芯”，并且丢弃了有缺陷的管芯，因此不会在有缺陷的管芯上浪费成本和精力。扇出封装件遭受翘曲。这导致扇出封装件与封装衬底的接合困难，并且相应的焊料连接可能发生故障。
发明内容
本发明的实施例提供了一种形成封装件的方法，包括：将第一器件管芯和第二器件管芯包封在包封材料中；在所述第一器件管芯和所述第二器件管芯上形成再分布线，所述再分布线电耦合到所述第一器件管芯和所述第二器件管芯；将桥接管芯接合在所述再分布线上以形成封装件，其中，所述封装件包括所述第一器件管芯、所述第二器件管芯和所述桥接管芯，其中，所述桥接管芯电互连所述第一器件管芯和所述第二器件管芯；以及用伪支撑管芯支撑所述封装件。
本发明的另一实施例提供了一种形成封装件的方法，包括：将第一器件管芯和第二器件管芯包封在包封材料中；在所述第一器件管芯和所述第二器件管芯上形成再分布线；在所述第一器件管芯和所述第二器件管芯上形成电连接件，所述电连接件通过所述再分布线电耦合到所述第一器件管芯和所述第二器件管芯；对所述包封材料实施分割，其中，将所述第一器件管芯和所述第二器件管芯锯成封装件；以及将所述封装件附接至伪支撑管芯。
本发明的又一实施例提供了一种封装件，包括：第一器件管芯；第二器件管芯；第一包封材料，将所述第一器件管芯和所述第二器件管芯包封在其中；多个再分布线，位于所述第一器件管芯和所述第二器件管芯上并且电耦合到所述第一器件管芯和所述第二器件管芯；桥接管芯，位于所述再分布线上并且接合至所述再分布线，其中，所述桥接管芯电互连所述第一器件管芯和所述第二器件管芯；以及伪支撑管芯，位于所述第一器件管芯和所述第二器件管芯下面并且附接至所述第一器件管芯和所述第二器件管芯。
附图说明
当结合附图进行阅读时，从以下详细描述可最佳理解本发明的各个方面。应该强调，根据工业中的标准实践，各个部件未按比例绘制并且仅用于说明的目的。实际上，为了清楚的讨论，各个部件的尺寸可以任意地增大或减小。
图1至图7A示出了根据一些实施例的集成扇出(InFO)封装件的形成中的中间阶段的截面图。
图7B示出了根据一些实施例的如图7A所示的InFO封装件的俯视图。
图8、图9A、图9B、图10至图13和图14A示出了根据一些实施例的InFO封装件的形成中的中间阶段的截面图。
图14B示出了根据一些实施例的如图14A中所示的InFO封装件的俯视图。
图15示出了根据一些实施例的如图14A所示的InFO封装件的一部分的放大视图。
图16至图18示出了根据一些实施例的InFO封装件的形成中的中间阶段的截面图。
图19示出了根据一些实施例的用于形成InFO封装件的工艺流程。
图20示出了根据一些实施例的用于形成InFO封装件的工艺流程。
具体实施方式
以下公开内容提供了许多用于实现本发明的不同特征不同的实施例或实例。下面描述了组件和布置的具体实施例或实例以简化本发明。当然这些仅是实例而不旨在限制。例如，元件的尺寸不限于所公开的范围或值，但可能依赖于工艺条件和/或器件所需的性能。此外，在以下描述中，在第二部件上方或者上形成第一部件可以包括第一部件和第二部件直接接触形成的实施例，并且也可以包括在第一部件和第二部件之间可以形成额外的部件，从而使得第一部件和第二部件可以不直接接触的实施例。为了简单和清楚的目的，各个部件可以以不同的比例任意地绘制。
此外，为了便于描述，本文中可以使用诸如“在…下方”、“在…下面”、“下部”、“在…上面”、“上部”等的空间关系术语，以描述如图中所示的一个元件或部件与另一元件或部件的关系。除了图中所示的方位外，空间关系术语旨在包括器件在使用或操作工艺中的不同方位。装置可以以其它方式定位(旋转90度或在其它方位)，并且在本文中使用的空间关系描述符可以同样地作相应地解释。
根据各种实施例提供了集成扇出(InFO)封装件及其形成方法。根据一些实施例示出了形成InFO封装件的中间阶段。讨论了一些实施例的一些变型。在各种视图和说明性实施例中，相同的附图标记用于表示相同的元件。
图1至图7A示出了根据本发明的一些实施例的InFO封装件的形成中的中间阶段的截面图。图1至图7A中所示的步骤也在如图19所示的工艺流程200中示意性地反映。
参照图1，提供载体20，并且将释放膜22涂布在载体20上。载体20可以由透明材料形成，并且可以是玻璃载体、陶瓷载体、有机载体等。载体20可以具有圆形顶视图形状，并且可以具有硅晶圆的尺寸。例如，载体20可以具有8英寸直径、12英寸直径等。释放膜22位于载体20的顶面上。释放膜22可以由光-热转换(LTHC)涂层材料形成。可以通过涂布将释放膜22施加到载体20上。根据本发明的一些实施例，LTHC涂层能够在光/辐射(例如激光)的热量下分解，因此可以从形成在其上的结构释放载体20。根据本发明的一些实施例，LTHC涂层22包括炭黑(碳颗粒)、溶剂、硅填料和/或环氧树脂。环氧树脂可以包括聚酰亚胺或另一种聚合物，例如丙烯酸。
图1示出了器件24A和24B在载体20上的放置/附接。相应的工艺示出为图19中所示的工艺流程中的工艺202。器件24A和24B可以是器件管芯，因此在下文中被称为器件管芯24A和24B，器件24A和24B也可以是其他类型的封装组件，例如封装件、集成无源器件等。器件管芯24A和24B通过作为粘合膜的管芯附接膜(DAF)26附接到LTHC涂层22。在器件管芯24A和24B放置在LTHC涂层22上之前，DAF 26可以预先附接在器件管芯24A和24B上。器件管芯24A和24B可以包括具有与DAF26物理接触的背面(面朝下的表面)的半导体衬底28A和28B。器件管芯24A和24B可以包括分别在半导体衬底28A和28B的正面(面向上的表面)处的集成电路器件(例如有源器件，其包括例如晶体管)30A和30B。根据本发明的一些实施例，器件管芯24A和24B中的一个(或两个)是逻辑管芯，其可以是中央处理单元(CPU)管芯、图形处理单元(GPU)管芯、移动应用管芯、微控制单元(MCU)管芯、输入输出(IO)管芯、基带(BB)管芯或应用处理器(AP)管芯。器件管芯24A和24B还可以分别包括互连结构32A和32B、金属柱34和介电层36。器件管芯24A和24B之间的距离S1可以大于约50μm，并且可以在约50μm和约780μm之间的范围内。器件管芯24A和24B的厚度T1可小于约730μm。
根据一些实施例，金属柱34(诸如铜柱)预先形成为器件管芯24A和24B的一部分，并且金属柱34电耦合到集成电路器件30A和30B。根据本发明的一些实施例，介电层36填充相邻金属柱34之间的间隙以形成顶部介电层。顶部介电层36还可以包括覆盖和保护金属柱34的部分。根据本发明的一些实施例，顶部介电层36可以由诸如聚苯并恶唑(PBO)或聚酰亚胺的聚合物形成。
接下来，参考图2，器件管芯24A和24B被包封在包封材料40中。相应的工艺示出为图19所示的工艺流程中的工艺204。包封材料40填充器件管芯24A和24B之间的间隙。包封材料40可以包括模塑料、模塑底部填料、环氧树脂和/或树脂。在包封器件管芯24A和24B时，包封材料40的顶面可以高于金属柱34的顶端。包封材料40可以包括基底材料，基底材料可以是聚合物、树脂、环氧树脂等，以及基底材料中的填料颗粒(未示出)。填料颗粒和基底材料可以类似于图15中的填料颗粒40A和基底材料40B。填料颗粒可以是SiO2、Al2O3、硅石等的介电颗粒，并且可以具有球形形状。而且，球形填料颗粒可以具有相同或不同的直径。
在随后的步骤中，也如图2所示，实施诸如化学机械抛光(CMP)工艺或机械研磨工艺的平坦化工艺以薄化包封材料40和介电层36，直到暴露金属柱34为止。由于平坦化工艺，金属柱34的顶面基本上与包封材料40的顶面共面。
图3示出了正面重分布结构的形成，其包括一层或多层再分布线(RDL)和相应的介电层。相应的工艺示出为图19所示的工艺流程中的工艺206。参考图3，首先形成介电层42。根据本发明的一些实施例，介电层42由诸如PBO、聚酰亚胺等的聚合物形成。形成工艺包括以可流动的形式涂布介电层42，以及然后固化介电层42。根据本发明的可选实施例，介电层42由无机介电材料形成，例如氮化硅、氧化硅等。形成方法可以包括化学气相沉积(CVD)、原子层沉积(ALD)、等离子体增强化学气相沉积(PECVD)或其他适用的沉积方法。然后，例如通过光刻工艺形成开口(由RDL 44的通孔部分占据)。根据其中介电层42由光敏材料(例如PBO、聚酰亚胺或苯并环丁烯(BCB))形成的一些实施例，开口的形成涉及使用光刻掩模(未示出)对介电层42进行曝光，以及显影介电层42。金属柱34通过开口暴露。
RDL 44形成在介电层42上。RDL 44包括形成在介电层42中的通孔部分，以连接到金属柱34，以及位于介电层42上的金属迹线部分。根据本发明的一些实施例，RDL 44在镀工艺中形成，镀工艺包括沉积金属晶种层(未示出)，在金属晶种层上形成和图案化光刻胶(未示出)，以及在金属晶种层上镀金属材料(例如铜和/或铝)。金属晶种层和镀的金属材料可以由相同材料或不同材料形成。然后去除图案化的光刻胶，接着蚀刻先前被图案化的光刻胶覆盖的金属晶种层的部分。
然后在RDL 44上形成介电层46，接着在介电层46中形成开口。因此RDL 44的一些部分通过开口暴露。可以使用选自用于形成介电层42的相同候选材料的材料来形成介电层46，该材料可以包括PBO、聚酰亚胺、BCB或其他有机或无机材料。然后形成RDL 48。RDL 48还包括延伸到介电层46中的开口中的通孔部分以接触RDL 44，以及直接位于介电层46上的金属线部分。RDL 48的形成可以与RDL 44的形成相同，包括形成晶种层，形成图案化的掩模，镀RDL 48，以及然后去除图案化的掩模和晶种层的不期望部分。
图3还示出了介电层50的形成。介电层50可以由选自用于形成介电层42和46的相同候选材料组的材料形成。例如，介电层50可以使用PBO、聚酰亚胺或BCB形成。在介电层50中形成开口52以暴露下面的金属焊盘，在说明性实施例中，下面的金属焊盘是RDL 48的一部分。
参考图4，根据本发明的一些实施例，UBM 54形成为延伸到介电层50中的开口中以接触RDL 48中的金属焊盘。UBM 54可以由镍、铜、钛或其多层形成。根据一些实施例，UBM 54包括钛层和位于钛层上的铜层。根据一些实施例，如图4所示，存在两层RDL(44和48)。根据可选实施例，存在一层RDL或三层或更多层RDL。
然后形成电连接件56。相应的工艺示出为图19所示的工艺流程中的工艺208。电连接件56的形成可以包括将焊球放置在UBM 54的暴露部分上，以及然后回流焊球。结果，电连接件56是焊接区，有时称为C4凸块。根据本发明的可选实施例，电连接件56的形成包括实施镀步骤以在UBM 54上形成焊料层，以及然后回流焊料层。电连接件56还可以包括非焊料金属柱，或位于非焊料金属柱上的金属柱和焊料帽，金属柱和焊料帽也可以通过镀形成。在整个说明书中，位于释放膜22上的结构称为封装件60，其是复合晶圆(下文中也称为复合晶圆60)，其中包括多个器件管芯24A和24B。
在随后的步骤中，如图5所示，复合晶圆60从载体20脱粘。脱粘可以包括将激光束投射在释放膜22上，使得释放膜22分解，并且复合晶圆60从载体20脱粘。然后将复合晶圆60沿着划线62锯开成多个封装件64，其中封装件64中的一个如图6所示。相应的工艺示出为图19中所示的工艺流程中的工艺210。根据一些实施例，实施研磨工艺以去除DAF 26。可以对复合晶圆60实施研磨工艺，使得去除复合晶圆60的位于虚线61下方的部分63。根据其他实施例，不实施研磨工艺。因此，封装件64可以包括或不包括部分63。
图6示出了桥接管芯66与封装件64的接合。相应的工艺示出为图19中所示的工艺流程中的工艺212。根据本发明的一些实施例，桥接管芯66通过焊料区76附接到UBM54。根据本发明的一些实施例，桥接管芯66没有诸如晶体管和二极管的有源器件。桥接管芯66可以或可以不具有无源器件，例如电容器、变压器、电感器、电阻器等。根据本发明的可选实施例，桥接管芯66包括一些有源器件和/或无源器件(未示出)，并且有源器件可以形成在半导体衬底67的顶面处。
桥接管芯66可以包括衬底67和互连结构68。衬底67可以是半导体衬底(诸如硅衬底、硅碳衬底等)或介电衬底，诸如氧化硅衬底。互连结构68包括介电层70和位于介电层70中的金属线和通孔72。介电层70可以包括金属间介电(IMD)层。根据本发明的一些实施例，一些介电层70由具有低于约3.0或低于约2.5的介电常数(k值)的低k介电材料形成。介电层70可以由Black Diamond(应用材料公司的注册商标)、含碳的低k介电材料、氢倍半硅氧烷(HSQ)、甲基倍半硅氧烷(MSQ)等形成。根据本发明的一些实施例，介电层70的形成包括沉积含致孔剂的介电材料，然后实施固化工艺以驱除致孔剂，使得剩余的介电层70是多孔的。可以由碳化硅、氮化硅等形成的蚀刻停止层(未示出)形成在IMD层70之间，并且为简单起见未示出。
金属线和通孔72形成在介电层70中。形成工艺可以包括单镶嵌和双镶嵌工艺。桥接管芯66还可以包括钝化层(也表示为70)。钝化层具有将低k介电层(如果有的话)和金属线/通孔72与有害化学物质和湿气的不利影响隔离的功能。钝化层可以由非低k介电材料形成，例如氧化硅、氮化硅、未掺杂的硅酸盐玻璃(USG)等。在钝化层中可以存在金属焊盘，例如铝焊盘(例如，其可以由铝铜形成)。接合焊盘(或金属凸块)74形成在桥接管芯66的表面处。桥接管芯66例如通过焊料区76接合到UBM 54。可以将底部填充物(未示出)分配到桥接管芯66和封装件64之间的间隙中。
桥接管芯66将器件管芯24A的金属柱34电连接到器件管芯24B的金属柱34。此外，桥接管芯66可以包括与器件管芯24A重叠的第一部分，以及与器件管芯24B重叠的第二部分。桥接管芯66可以是薄的，例如，厚度小于约50μm。
参照图7A，将支撑管芯80粘附到封装件64以形成封装件84。相应的工艺示出为图19所示的工艺流程中的工艺214。在整个说明书中，支撑管芯80也称为伪支撑管芯，因为它可以是在其中没有形成有源器件(例如晶体管和二极管)和无源器件(例如电阻器、电容器和电感器)的空白管芯。此外，支撑管芯80可以不具有在其中形成的任何金属线、通孔等。支撑管芯80由刚性材料形成，刚性材料的杨氏模量等于或大于硅的杨氏模量(约165GPa至约179GPa)。伪支撑管芯80的厚度T2足够大以为上面的封装件64提供足够的机械支撑，使得封装件64的翘曲减小到期望值。厚度T2可以大于约50μm，并且可以在约50μm和约730μm之间的范围内。此外，器件管芯24A/24B和伪支撑管芯80的总厚度(T1+T2)可小于约780μm。
另外，伪支撑管芯80可以具有良好的导热性。伪支撑管芯80的导热率可以接近(例如，大于90％)上面的器件管芯中的半导体衬底(例如硅衬底)的导热率。例如，硅具有等于约148W/(m*K)的导热率，因此伪支撑管芯80的导热率可以大于约135W/(m*K)或更高。利用具有高导热率的伪支撑管芯80，改善了所得结构中的散热。
根据本发明的一些实施例，伪支撑管芯80由金属或金属合金、半导体材料或介电材料形成。例如，根据一些实施例，当包括金属时，伪支撑管芯80可以由铜、铝、镍、不锈钢等形成，因此是金属膜/板。当由半导体材料形成时，伪支撑管芯80可以是空白硅管芯。当由介电材料形成时，伪支撑管芯80可以由陶瓷形成。另外，伪支撑管芯80的材料可以是均匀的。例如，整个伪支撑管芯80可以由相同的材料形成，在伪支撑管芯80的所有部分中包括相同的元素，并且元素的原子百分比在整个伪支撑管芯80中可以是均匀的。根据一些实施例，其中伪支撑管芯80由硅形成，在伪支撑管芯80中掺杂p型或n型杂质。根据可选实施例，其中伪支撑管芯80由硅形成，在伪支撑管芯80中没有掺杂p型杂质和n型杂质。
根据一些实施例，粘合剂82由热界面材料(TIM)形成，其具有相对高的导热率，例如，高于约1.0W/(m*K)或高于约5.0W/(M*K)。
封装件64也接合到封装组件85，封装组件85可以是封装衬底、印刷电路板、封装件等。相应的工艺示出为图19所示的工艺流程中的工艺216。所得到的封装件被称为封装件87。封装组件85与封装件64的接合可以通过电连接件56，电连接件56可以包括焊接区。
图7B示出了封装件84的一些部分的俯视图。根据一些实施例，伪支撑管芯80具有在四个方向(+X、-X、+Y和-Y)上延伸超出封装件64的边缘的延伸部分，延伸部分具有延伸宽度W1和W2。延伸宽度W1和W2可以大于约50μm，并且可以在约50μm和约100μm之间的范围内。将伪支撑管芯80的长度和宽度增加到大于封装件64的相应长度和宽度，改善了封装件84对翘曲的抵抗力。
根据一些实施例，延伸宽度W2等于延伸宽度W1。根据本发明的一些实施例，封装件64和伪支撑管芯80都是伸长的，封装件84具有长度Lpkg和小于长度Lpkg的宽度Wpkg。例如，比率Lpkg/Wpkg可以大于约1.5。封装件84的长边比短边更容易翘曲，并且在长边上比在短边上可能需要(至少相等或)更多支撑。根据一些实施例，延伸宽度W2大于延伸宽度W1，使得伪支撑管芯80(和封装件84)不如封装件64那样伸长。根据本发明的一些实施例，延伸宽度W1和W2都具有非零值。比率W2/W1可以等于或大于比率Lpkg/Wpkg，以对长度Lpkg和宽度Wpkg之间的差提供足够的补偿。例如，比率W2/W1可以大于约1.5。
根据其他实施例，宽度W2大于约50μm，并且可以在约50μm和约100μm之间的范围内。另一方面，宽度W1等于0μm。这改善了伸长的封装件84对翘曲的抵抗力，而不会过度增加封装件84的长度。
图8至图14A示出了根据本发明的一些实施例的InFO封装件的形成中的中间阶段的截面图。除非另有说明，否则这些实施例中的组件的材料和形成方法基本上与由图1至图7A和图7B所示的实施例中的相同的附图标记表示的相同的组件相同。因此，可以在图1至图7A和图7B中所示的实施例的讨论中找到关于图8至体14A和图14B中所示的部件的形成工艺和材料的细节。图8至图14A中所示的步骤也在图20中所示的工艺流程300中示意性地反映。
参照图8，将伪支撑管芯80放置在释放膜22上，释放膜22涂布在载体20上。相应的工艺示出为图20所示的工艺流程中的工艺302。接下来，参考图9A，形成包封材料86，这包括分配和固化包封材料86。相应的工艺示出为图20所示的工艺流程中的工艺304。实施诸如CMP工艺或机械研磨工艺的平坦化工艺以使包封材料86的顶面与伪支撑管芯80的顶面齐平。根据可选实施例，跳过包封材料86的形成和相应的平坦化工艺。
图9B示出了图9A中所示结构的俯视图。根据一些实施例，伪支撑管芯80包括伪支撑管芯80A和位于相应的伪支撑管芯80A的相对侧上的伪支撑管芯80B。伪支撑管芯80B可以比伪支撑管芯80A更伸长。伪支撑管芯80A和80B单独地并且统称为伪支撑管芯80。
图10示出了器件(管芯)24A和24B的放置，其通过DAF 26放置在伪支撑管芯80上。相应的工艺示出为图20中所示的工艺流程中的工艺306。根据一些实施例，其中已形成包封材料86，器件管芯24A和24B的一些部分与包封材料86重叠。根据未形成包封材料86的其他实施例，器件管芯24A和24B的一些部分在此阶段悬浮。
图11示出了器件管芯24A和24B包封在包封材料40中，这包括分配和固化包封材料40，以及实施平坦化以露出金属柱34。相应的工艺示出为图20中所示的工艺流程中的工艺308。根据已经形成包封材料86的一些实施例，在包封材料40和包封材料86之间存在可区分的界面。例如，图15示出了图11中的放大区域88。包封材料86包括基底材料86B和基底材料86B中的填料颗粒86A。包封材料40包括基底材料40B和基底材料40B中的填料颗粒40A。由于包封材料40包封在平坦化的包封材料86上，并且对与包封材料86接触的包封材料40的部分不进行平坦化，所以与包封材料86接触的球形颗粒40A是圆形的，具有与包封材料86接触的圆形表面。作为比较，已在图9A所示的步骤中平坦化与包封材料40接触的包封材料86的部分。因此，在平坦化期间部分地切割与包封材料40接触的球形颗粒86A，并且因此将具有与包封材料40接触的基本平坦的顶面(而不是圆形顶面)。
根据未形成包封材料86的其他实施例，包封材料40将填充到伪支撑管芯80A和80B之间的间隙中。因此，包封材料40包括具有伪支撑管芯80A和80B的下部层，以及具有器件管芯24A和24B的上部层。由于包封材料40的下部和上部以共同的工艺并且使用相同的材料形成，因此，根据这些实施例，在下部和上部之间不存在可区分的界面。
图12示出了复合晶圆60的继续形成，包括介电层42、46和50以及RDL 44和48的形成。相应的工艺示出为图20中所示的工艺流程中的工艺310。还形成UBM 54和电连接件56。相应的工艺示出为图20所示的工艺流程中的工艺312。在随后的步骤中，将复合晶圆60从载体20上分离，然后将其锯成单独的封装件64。相应的工艺示出为图20所示的工艺流程中的工艺314。在图13中示出了所得到的封装件64中的一个。
在随后的步骤中，如图14A所示，桥接管芯66接合到封装件64，以电互连器件管芯24A和24B。相应的工艺示出为图20中所示的工艺流程中的工艺316。因此形成了封装件84。然后将封装件64接合到封装组件85，封装组件85可以是封装衬底、印刷电路板、封装件等。得到的封装件称为封装件87。
图14B示出了封装件84的一些部分的俯视图。根据一些实施例，存在组合支撑上面的结构的多个伪支撑管芯80。伪支撑管芯80B的长度LB小于封装件84的长度Lpkg。差值Lpkg-LB可以大于约50μm，并且可以在约50μm和约100μm之间的范围内。伪支撑管芯80B的宽度WB可以等于或大于封装件84的宽度Wpkg的约1/4。伪支撑管芯80A的宽度WA可以大于约10μm。伪支撑管芯80A和80B之间的间隔S2可以大于约10μm。伪支撑管芯80A的长度LA与桥接管芯66的长度LSB之间的差值(LA-LSB)可以大于约100μm，并且可以在约100μm和约200μm之间的范围内。
采用多个伪支撑管芯而不是单个大伪支撑管芯具有将翘曲调整到期望值的有利特征。例如，当封装件84连接到封装组件85(图14A)时，由于封装组件85在热循环期间也具有翘曲。如果封装件84和封装组件85朝相同方向翘曲(例如，两者都具有低于边缘部分的中间部分)，则可能期望封装件84具有与封装组件85相同的翘曲程度，而不是封装件84根本没有翘曲。这是因为如果封装组件85翘曲而封装件84不翘曲，则也可能发生冷接合或焊接桥接。形成三个伪支撑管芯可以在桥接管芯66的正下方提供伪支撑管芯80A以支撑桥接管芯66。另一方面，可以调整伪支撑管芯80B的长度LB和宽度WB以调整封装件84的翘曲，因此封装件84和封装组件85在热循环中具有相同的翘曲程度。
图16至图18示出了根据一些实施例的封装件87的形成中的中间阶段。图16示出了复合晶圆60的形成。复合晶圆60的形成工艺可以与图1至图4所示的基本相同，除了图1至图4所示的载体20被支撑晶圆80(图16)代替以支撑上面的器件管芯24A和24B。而且，在支撑晶圆80和上面的DAF 26之间没有形成释放膜。
用于形成如图16所示的封装件84的工艺细节、结构和材料可以在参考图1至图4的讨论中找到，并且在此不再重复。在形成如图16所示的重建晶圆60之后，沿着划线62实施管芯锯切工艺，得到如图17所示的封装件84。当锯切相应的复合(重建)晶圆60(图16)时，也锯切支撑晶圆80，并且将支撑晶圆80留在所得到的封装件84中。支撑晶圆80也称为支撑管芯80。根据本发明的一些实施例，支撑晶圆/管芯80的材料选自与前述实施例中讨论的相同的候选材料组。支撑管芯80和上面的器件管芯24A/24B的厚度可以类似于前面段落中讨论的，并且在此不再重复。由于支撑晶圆80与上面的包封材料40一起被锯切，支撑管芯80的边缘与包封材料40的相应边缘齐平。此外，DAF 26可以具有与支撑管芯80和器件管芯24A/24B接触的相对表面。
参考图18，封装件84接合到封装组件85，封装组件85可以是封装衬底、印刷电路板、封装件等。得到的封装件称为封装件87。
在上面说明的实施例中，根据本发明的一些实施例讨论了一些工艺和特征。还可以包括其他特征和工艺。例如，可以包括测试结构以帮助3D封装件或3DIC器件的验证测试。例如，测试结构可以包括形成在再分布层中或衬底上的的测试焊盘，测试焊盘允许使用探针和/或探针卡等测试3D封装件或3DIC。可以对中间结构以及最终结构实施验证测试。另外，本文所公开的结构和方法可以与测试方法结合使用，测试方法结合已知良好管芯的中间验证以增加产量并且降低成本。
本发明的实施例具有一些有利特征。多个堆叠封装件可以变得非常薄。薄的多堆叠封装件遭受翘曲，并且当使用伸长的器件管芯时翘曲变差。因此，将刚性伪支撑管芯添加到多堆叠封装件中以提供机械支撑，从而减小翘曲。伪支撑管芯也由具有良好导热性的材料形成，使得伪支撑管芯可以容易地将热量传导出封装件，并且改善了多堆叠封装件的散热。
根据本发明的一些实施例，一种方法包括将第一器件管芯和第二器件管芯包封在包封材料中，在第一器件管芯和第二器件管芯上形成再分布线，再分布线电耦合到第一器件管芯和第二器件管芯，以及将桥接管芯接合在再分布线上以形成封装件，其中封装件包括第一器件管芯、第二器件管芯和桥接管芯。桥接管芯电互连第一器件管芯和第二器件管芯。第一器件管芯、第二器件管芯和桥接管芯由伪支撑管芯支撑。在一个实施例中，该支撑包括通过粘合剂将伪支撑管芯附接到封装件。在一个实施例中，该方法还包括锯切包封材料以形成封装件，其中伪支撑管芯在锯切之后附接到封装件。在一个实施例中，伪支撑管芯延伸超出封装件的第一边缘和第二边缘，并且伪支撑管芯包括与封装件的第三边缘和第四边缘齐平的相对边缘，第三边缘和第四边缘彼此平行并且垂直于第一边缘和第二边缘。在一个实施例中，伪支撑管芯在四个方向上延伸超出封装件的四个边缘。在一个实施例中，伪支撑管芯包括空白硅管芯。在一个实施例中，伪支撑管芯包括金属管芯。在一个实施例中，该方法还包括将伪支撑管芯放置在载体上；将伪支撑管芯包封在附加包封材料中；以及将第一器件管芯和第二器件管芯放置在伪支撑管芯和附加包封材料上。
在上述方法中，其中，所述支撑包括通过粘合剂将所述伪支撑管芯附接到所述封装件。
在上述方法中，其中，所述支撑包括通过粘合剂将所述伪支撑管芯附接到所述封装件，其中，将所述伪支撑管芯附接到所述封装件包括将所述伪支撑管芯附接到所述封装件的与所述桥接管芯相对的侧。
在上述方法中，还包括锯切所述包封材料以形成所述封装件，其中，所述伪支撑管芯在所述锯切之后附接到所述封装件。
在上述方法中，还包括锯切所述包封材料以形成所述封装件，其中，在所述锯切中，锯切开支撑晶圆，并且所述伪支撑管芯是所述支撑晶圆的部分。
在上述方法中，还包括锯切所述包封材料以形成所述封装件，其中，在所述锯切中，锯切开支撑晶圆，并且所述伪支撑管芯是所述支撑晶圆的部分，还包括：使用管芯附接膜将所述第一器件管芯和所述第二器件管芯附接到所述支撑晶圆。
在上述方法中，还包括：将所述伪支撑管芯放置在载体上；将所述伪支撑管芯包封在附加包封材料中；以及将所述第一器件管芯和所述第二器件管芯放置在所述伪支撑管芯和所述附加包封材料上。
在上述方法中，还包括：将所述伪支撑管芯放置在载体上；将所述伪支撑管芯包封在附加包封材料中；以及将所述第一器件管芯和所述第二器件管芯放置在所述伪支撑管芯和所述附加包封材料上，其中，所述支撑还包括将所述载体从所述封装件的与所述桥接管芯相对的侧脱粘。
根据本发明的一些实施例，一种方法包括将第一器件管芯和第二器件管芯包封在包封材料中；在第一器件管芯和第二器件管芯上形成再分布线；在第一器件管芯和第二器件管芯上形成电连接件，电连接件通过再分布线电耦合到第一器件管芯和第二器件管芯；对包封材料实施分割，其中将第一器件管芯和第二器件管芯锯成封装件；以及将封装件附接至伪支撑管芯。在一个实施例中，伪支撑管芯在四个横向方向中的每个方向上延伸超出封装件的边缘。在一个实施例中，在封装件的俯视图中，封装件是伸长的并且包括长边和垂直于长边并且短于长边的短边，并且伪支撑管芯延伸超出短边，并且具有与长边齐平的边缘。在一个实施例中，该方法还包括将桥接管芯接合到封装件，其中桥接管芯位于再分布线的与第一器件管芯和第二器件管芯相对的一侧上。在一个实施例中，伪支撑管芯包括伪硅管芯。在一个实施例中，伪支撑管芯包括金属管芯。
在上述方法中，其中，所述伪支撑管芯在四个横向方向中的每个方向上延伸超出所述封装件的边缘。
在上述方法中，其中，在所述封装件的俯视图中，所述封装件是伸长的并且包括长边和垂直于所述长边并且短于所述长边的短边，并且所述伪支撑管芯延伸超出所述短边，并且具有与所述长边齐平的边缘。
在上述方法中，还包括将桥接管芯接合到所述封装件，其中，所述桥接管芯位于所述再分布线的与所述第一器件管芯和所述第二器件管芯相对的一侧上。
在上述方法中，还包括将桥接管芯接合到所述封装件，其中，所述桥接管芯位于所述再分布线的与所述第一器件管芯和所述第二器件管芯相对的一侧上，其中，所述伪支撑管芯接合为具有与所述第一器件管芯的第一部分以及与所述第二器件管芯重叠的第二部分。
在上述方法中，其中，将所述封装件附接至伪支撑管芯包括：将支撑晶圆附接至所述封装件；以及锯切所述包封材料和所述支撑晶圆，其中，所述支撑晶圆的部分形成所述伪支撑管芯。
根据本发明的一些实施例，封装件包括：第一器件管芯；第二器件管芯；第一包封材料，将第一器件管芯和第二器件管芯包封在其中；多个再分布线，位于第一器件管芯和第二器件管芯上并且电耦合到第一器件管芯和第二器件管芯；桥接管芯，位于再分布线上并且接合至再分布线，其中桥接管芯电互连第一器件管芯和第二器件管芯；以及伪支撑管芯，位于第一器件管芯和第二器件管芯下面并且附接至第一器件管芯和第二器件管芯。在一个实施例中，桥接管芯包括与第一器件管芯重叠的第一部分；和与第二器件管芯重叠的第二部分。在一个实施例中，封装件还包括将第一器件管芯和第二器件管芯附接到伪支撑管芯的粘合膜。在一个实施例中，封装件还包括将伪支撑管芯包封在其中的第二包封材料。在一个实施例中，第一包封材料接触第二包封材料，在第一包封材料和第二包封材料之间具有可区分的界面。在一个实施例中，伪支撑管芯横向延伸超出第一包封材料的边缘。上面概述了若干实施例的特征，使得本领域人员可以更好地理解本发明的方面。本领域人员应该理解，它们可以容易地使用本发明作为基础来设计或修改用于实施与本文所介绍实施例相同的目的和/或实现相同优势的其它工艺和结构。本领域技术人员也应该意识到，这种等同构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，本文中它们可以做出多种变化、替换以及改变。

Claims (10)

1.一种形成封装件的方法，包括：
将第一器件管芯和第二器件管芯包封在包封材料中；
在所述第一器件管芯和所述第二器件管芯上形成再分布线，所述再分布线电耦合到所述第一器件管芯和所述第二器件管芯；
将桥接管芯接合在所述再分布线上以形成封装件，其中，所述封装件包括所述第一器件管芯、所述第二器件管芯和所述桥接管芯，其中，所述桥接管芯电互连所述第一器件管芯和所述第二器件管芯；以及
用伪支撑管芯支撑所述封装件。
2.根据权利要求1所述的方法，其中，所述支撑包括通过粘合剂将所述伪支撑管芯附接到所述封装件。
3.根据权利要求2所述的方法，其中，将所述伪支撑管芯附接到所述封装件包括将所述伪支撑管芯附接到所述封装件的与所述桥接管芯相对的侧。
4.根据权利要求1所述的方法，还包括锯切所述包封材料以形成所述封装件，其中，所述伪支撑管芯在所述锯切之后附接到所述封装件。
5.根据权利要求1所述的方法，还包括锯切所述包封材料以形成所述封装件，其中，在所述锯切中，锯切开支撑晶圆，并且所述伪支撑管芯是所述支撑晶圆的部分。
6.根据权利要求5所述的方法，还包括：使用管芯附接膜将所述第一器件管芯和所述第二器件管芯附接到所述支撑晶圆。
7.根据权利要求1所述的方法，还包括：
将所述伪支撑管芯放置在载体上；
将所述伪支撑管芯包封在附加包封材料中；以及
将所述第一器件管芯和所述第二器件管芯放置在所述伪支撑管芯和所述附加包封材料上。
8.根据权利要求7所述的方法，其中，所述支撑还包括将所述载体从所述封装件的与所述桥接管芯相对的侧脱粘。
9.一种形成封装件的方法，包括：
将第一器件管芯和第二器件管芯包封在包封材料中；
在所述第一器件管芯和所述第二器件管芯上形成再分布线；
在所述第一器件管芯和所述第二器件管芯上形成电连接件，所述电连接件通过所述再分布线电耦合到所述第一器件管芯和所述第二器件管芯；
对所述包封材料实施分割，其中，将所述第一器件管芯和所述第二器件管芯锯成封装件；以及
将所述封装件附接至伪支撑管芯。
10.一种封装件，包括：
第一器件管芯；
第二器件管芯；
第一包封材料，将所述第一器件管芯和所述第二器件管芯包封在其中；
多个再分布线，位于所述第一器件管芯和所述第二器件管芯上并且电耦合到所述第一器件管芯和所述第二器件管芯；
桥接管芯，位于所述再分布线上并且接合至所述再分布线，其中，所述桥接管芯电互连所述第一器件管芯和所述第二器件管芯；以及
伪支撑管芯，位于所述第一器件管芯和所述第二器件管芯下面并且附接至所述第一器件管芯和所述第二器件管芯。
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