TWI682509B - 封裝件及其形成方法 - Google Patents

封裝件及其形成方法 Download PDF

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Publication number
TWI682509B
TWI682509B TW107137835A TW107137835A TWI682509B TW I682509 B TWI682509 B TW I682509B TW 107137835 A TW107137835 A TW 107137835A TW 107137835 A TW107137835 A TW 107137835A TW I682509 B TWI682509 B TW I682509B
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Taiwan
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die
package
device die
dummy support
forming
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TW107137835A
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English (en)
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TW202002197A (zh
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陳潔
陳憲偉
陳英儒
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台灣積體電路製造股份有限公司
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Abstract

本揭露提供一種封裝件及其形成方法，所述方法包括： 將第一裝置晶粒及第二裝置晶粒包封於包封材料中；在第一裝置晶粒及第二裝置晶粒上方形成重佈線，所述重佈線電性耦接至第一裝置晶粒及第二裝置晶粒；以及將橋接晶粒接合於重佈線上方以形成封裝件，其中封裝件包括第一裝置晶粒、第二裝置晶粒以及橋接晶粒。橋接晶粒電性互耦第一裝置晶粒與第二裝置晶粒。第一裝置晶粒、第二裝置晶粒以及橋接晶粒由虛設支撐晶粒來支撐。

Description

封裝件及其形成方法
本發明實施例是有關於一種封裝件及其形成方法。
隨著半導體技術的發展，半導體晶片/晶粒正變得愈來愈小。同時，需要將更多功能整合至半導體晶粒中。因此，半導體晶粒需要將愈來愈多的輸入輸出(I/O)接墊封裝於較小區域中，且I/O接墊的密度隨時間推移而快速提高。結果，半導體晶粒的封裝變得更加困難，這對封裝的良率有不利地影響。
習知封裝技術可分為兩個種類。在第一種類中，晶圓上的晶粒在被切割之前進行封裝。此封裝技術具有一些有利特徵，例如產能(throughput)較大且成本較低。另外，所需要的底部填充料(underfill)或模製化合物較少。然而，此封裝技術亦具有缺點。由於晶粒的尺寸正變得愈來愈小，且相應的封裝件僅可為扇入型封裝件，其中每一晶粒的I/O接墊被限於在相應晶粒的表面正上方的區域。由於晶粒的面積受限，I/O接墊的數目由於I/O接墊的間距限制而受到限制。若接墊的間距減小，則可能出現焊橋(solder bridge)。另外，焊球必須具有一特定尺寸，此又會限制可封裝於 晶粒的表面上的焊球的數目。
在封裝的另一種類中，晶圓先被切割成晶粒，之後再對晶粒進行封裝。此封裝技術的有利特徵為形成扇出型封裝件的可能性，此意味著可將晶粒上的I/O接墊重佈至比晶粒更大的區域，且因此可增加封裝於晶粒的表面上的I/O接墊的數目。此封裝技術的另一有利特徵為封裝「已知良好晶粒(known-good-dies)」並捨棄有缺陷的晶粒，且因此不會在有缺陷的晶粒上浪費成本及精力。扇出型封裝件遭受翹曲。此導致難以使扇出型封裝件接合至封裝基底，且個別焊料可能接合失敗。
根據本揭露的一些實施例，一種封裝件的形成方法包括：將第一裝置晶粒及第二裝置晶粒包封於包封材料中；在第一裝置晶粒及第二裝置晶粒上方形成重佈線，所述重佈線電性耦接至第一裝置晶粒及第二裝置晶粒；以及將橋接晶粒接合於重佈線上方以形成封裝件。所述封裝件包括第一裝置晶粒、第二裝置晶粒以及橋接晶粒。橋接晶粒電性互耦第一裝置晶粒與第二裝置晶粒。第一裝置晶粒、第二裝置晶粒以及橋接晶粒由虛設支撐晶粒來支撐。
根據本揭露的一些實施例，一種封裝件的形成方法包括：將第一裝置晶粒及第二裝置晶粒包封於包封材料中；在第一裝置晶粒及第二裝置晶粒上方形成重佈線；在第一裝置晶粒及第二裝置晶粒上方形成電連接件，所述電連接件藉由重佈線電性耦接至第一裝置晶粒及第二裝置晶粒；對包封材料執行單體化，其 中第一裝置晶粒及第二裝置晶粒被切割成封裝件；以及將封裝件貼附至虛設支撐晶粒。
根據本揭露的一些實施例，一種封裝件包括第一裝置晶粒、第二裝置晶粒、第一包封材料、多個重佈線、橋接晶粒以及虛設支撐晶粒。第一包封材料將第一裝置晶粒及第二裝置晶粒包封於其中。多個重佈線位於第一裝置晶粒及第二裝置晶粒上方且電性耦接至第一裝置晶粒及第二裝置晶粒。橋接晶粒位於重佈線上方並接合至重佈線，其中橋接晶粒電性互耦第一裝置晶粒與第二裝置晶粒。虛設支撐晶粒位於第一裝置晶粒及第二裝置晶粒下方且貼附至第一裝置晶粒及第二裝置晶粒。
20‧‧‧載板
22‧‧‧離型膜
24A、24B‧‧‧裝置晶粒
26‧‧‧晶粒貼合膜
28A、28B、67‧‧‧基底
30A、30B‧‧‧積體電路裝置
32A、32B、68‧‧‧互連結構
34‧‧‧金屬柱
36、42、46、50、70‧‧‧介電層
40、86‧‧‧包封材料
40A、86A‧‧‧顆粒
40B、86B‧‧‧基材
44、48‧‧‧重佈線
52‧‧‧開口
54‧‧‧凸塊下金屬
56‧‧‧電連接件
60‧‧‧複合晶圓
64、84、87‧‧‧封裝件
61‧‧‧虛線
62‧‧‧切割線
63‧‧‧部分
66‧‧‧橋接晶粒
72‧‧‧金屬線及通孔
74‧‧‧接合接墊
76‧‧‧焊料區域
80、80A、80B‧‧‧虛設支撐晶粒
82‧‧‧黏著劑
85‧‧‧封裝組件
88‧‧‧區域
200、300‧‧‧製程流程
202、204、206、208、210、212、214、216、302、304、306、308、310、312、314、316‧‧‧製程
Lpkg、LA、LB、LSB‧‧‧長度
S1‧‧‧距離
S2‧‧‧間距
T1、T2‧‧‧厚度
W1、W2‧‧‧延伸寬度
Wpkg、WA、WB‧‧‧寬度
+X、-X、+Y、-Y‧‧‧方向
結合附圖閱讀以下詳細描述，會最佳地理解本揭露的態樣。應注意，根據業界中的標準慣例，各種特徵未按比例繪製。事實上，為使論述清楚起見，而任意地增大或減小各種特徵的尺寸。
圖1至圖7A繪示根據一些實施例的形成積體扇出型(Integrated Fan-Out；InFO)封裝件的中間步驟的剖視圖。
圖7B繪示根據一些實施例的圖7A中所示InFO封裝件的上視圖。
圖8、圖9A、圖9B、圖10至圖13以及圖14A繪示根據一些實施例的形成InFO封裝件的中間步驟的剖視圖。
圖14B繪示根據一些實施例的圖14A中所示的InFO封裝件的上視圖。
圖15繪示根據一些實施例的圖14A中所示的InFO封裝件的一部分的放大視圖。
圖16至圖18繪示根據一些實施例的形成InFO封裝件的中間步驟的剖視圖。
圖19繪示根據一些實施例的用於形成InFO封裝件的製程流程。
圖20繪示根據一些實施例的用於形成InFO封裝件的製程流程。
以下揭露內容提供用於實現本揭露的不同特徵的許多不同的實施例或實例。下文描述元件及配置的具體實例以簡化本揭露內容。當然，這些僅為實例且不旨在進行限制。舉例而言，在以下描述中，在第二特徵上方或第二特徵上形成第一特徵可包括第一特徵與第二特徵直接接觸地形成的實施例，且亦可包括在第一特徵與第二特徵之間可形成額外特徵，以使得第一特徵與第二特徵可不直接接觸的實施例。另外，本揭露在各種實例中可重複參考標號及/或字母。這種重複是出於簡單及清晰的目的，且並不表示所論述的各種實施例與/或配置之間的關係。
此外，為易於描述附圖中所示的一個元件或特徵與另一元件或特徵的關係，本文中可使用例如「在…下(underlying)」、「在...下方(below)」、「下部(lower)」、「在…上(overlying)」、「上部(upper)」等空間相對用語。除附圖中所繪示的定向以外，所述空間相對術語意欲涵蓋裝置在使用或操作中的不同定向。設備可 以其他方式定向(旋轉90度或處於其他定向)，且本文中所使用的空間相對用語可同樣相應地進行解譯。
根據各種實施例提供積體扇出型(InFO)封裝件及其形成方法。根據一些實施例繪示形成InFO封裝件的中間步驟。將討論一些實施例的一些變型。貫穿各種視圖及示例實施例，相似的參考標號用以表示相似元件。
圖1至圖7A繪示根據本揭露一些實施例的形成InFO封裝件的中間步驟的剖視圖。圖1至圖7A中所示的步驟亦示意性地反映在圖19中所示的製程流程200中。
參照圖1，提供載板20，並將離型膜22塗佈於載板20上。載板20可由透明材料形成，且可為玻璃載板、陶瓷載板、有機載板或其類似物。載板20可具有圓形上視形狀，且可具有矽晶圓的尺寸。舉例而言，載板20可具有8英吋直徑、12英吋直徑或類似尺寸。離型膜22位於載板20的頂部表面上方。離型膜22可由光熱轉換(Light-To-Heat-Conversion；LTHC)塗佈材料形成。離型膜22可藉由塗佈而塗覆於載板20上。根據本揭露的一些實施例，LTHC塗層能夠在光/輻射(例如雷射)的熱量下分解，且因此可使載板20從形成於其上的結構脫離。根據本揭露的一些實施例，離型膜(LTHC塗層)22包括碳黑(碳顆粒)、溶劑、矽填充料及/或環氧樹脂。環氧樹脂可包括聚醯亞胺或另一聚合物(例如丙烯酸樹酯)。
圖1繪示將裝置24A及裝置24B放置/貼附於載板20上。相應的製程在圖19所示的製程流程中被示為製程202。裝置24A及裝置24B可為裝置晶粒，且因此在下文中被稱為裝置晶粒24A及裝置晶粒24B，而裝置24A及裝置24B亦可為其他類型的封裝組件，例 如封裝件、積體被動裝置或類似物。裝置晶粒24A及裝置晶粒24B藉由晶粒貼合膜(Die-Attach Film；DAF)26貼附至LTHC塗層22，所述晶粒貼合膜為黏著膜。在將裝置晶粒24A及裝置晶粒24B放置於LTHC塗層22上之前，可將DAF 26預貼附於裝置晶粒24A及裝置晶粒24B上。裝置晶粒24A與裝置晶粒24B可包括半導體基底28A與半導體基底28B，所述半導體基底28A的背面與半導體基底28B的背面(面朝下的表面)與DAF 26物理接觸。裝置晶粒24A與裝置晶粒24B可分別包括積體電路裝置(例如主動裝置，主動裝置例如包括電晶體)30A與30B。積體電路裝置30A與積體電路裝置30B分別位於半導體基底28A的前表面與半導體基底28B的前表面(面朝上的表面)處。根據本揭露的一些實施例，裝置晶粒24A及裝置晶粒24B中的一者或兩者為邏輯晶粒，其可為中央處理單元(Central Processing Unit；CPU)晶粒、圖形處理單元(Graphic Processing Unit；GPU)晶粒、行動應用程式晶粒(mobile application die)、微控制單元(Micro Control Unit；MCU)晶粒、輸入輸出(input-output；IO)晶粒、基頻(BaseBand；BB)晶粒或應用程式處理器(Application processor；AP)晶粒。裝置晶粒24A與裝置晶粒24B亦可分別包括互連結構32A與互連結構32B、金屬柱34以及介電層36。裝置晶粒24A與裝置晶粒24B之間的距離S1可大於約50微米，且可在約50微米至約780微米的範圍內。裝置晶粒24A與裝置晶粒24B的厚度T1可小於約730微米。
根據一些實施例，金屬柱34(例如銅柱)可被預形成為裝置晶粒24A的一部分及裝置晶粒24B的一部分，且金屬柱34電性耦接至積體電路裝置30A與積體電路裝置30B。根據本揭露的一些 實施例，介電材料36填充相鄰金屬柱34之間的間隙以形成頂部介電層。頂部介電層36亦可包括覆蓋並保護金屬柱34的部分。根據本揭露的一些實施例，頂部介電層36可由聚合物形成，聚合物例如是聚苯並噁唑(polybenzoxazole；PBO)或聚醯亞胺。
接著，參照圖2，將裝置晶粒24A與裝置晶粒24B包封於包封材料40中。相應的製程在圖19所示的製程流程中被示為製程204。包封材料40填充裝置晶粒24A與裝置晶粒24B之間的間隙。包封材料40可包括模製化合物、模製底部填充料(molding underfill)、環氧樹脂及/或樹脂。包封材料40的頂部表面在包封裝置晶粒24A及裝置晶粒24B時可高於金屬柱34的頂部末端。包封材料40可包括基材(base material)及填充料顆粒(filler particle)(未繪示)。基材可為聚合物、樹脂、環氧樹脂或其類似物。填充料顆粒位於基材中。填充料顆粒及基材可類似於圖15中的填充料顆粒40A及基材40B。填充料顆粒可為SiO2、Al2O3、矽石或其類似物的介電顆粒，且可具有球形形狀。另外，球形填充料顆粒可具有相同或不同的直徑。
亦如圖2所示，在後續步驟中，執行平坦化製程(例如化學機械研磨(Chemical Mechanical Polish；CMP)製程或機械研磨製程)，以薄化包封材料40及介電層36，直至金屬柱34暴露出來。由於平坦化製程，金屬柱34的頂部表面與包封材料40的頂部表面實質上共面。
圖3繪示前側重佈線結構的形成，前側重佈線結構包括一或多層重佈線(Redistribution Lines；RDL)及相應的介電層。相應的製程在圖19所示的製程流程中被示為製程206。參照圖3，首 先形成介電層42。根據本揭露的一些實施例，介電層42由聚合物形成，聚合物例如是PBO、聚醯亞胺或其類似物。其形成製程包括以可流動的形式塗佈介電層42，並隨後將介電層42固化。根據本揭露的替代實施例，介電層42由無機介電材料形成。無機介電材料例如是氮化矽、氧化矽或其類似物。其形成方法可包括化學氣相沈積(Chemical Vapor Deposition；CVD)、原子層沈積(Atomic Layer Deposition；ALD)、電漿增強型化學氣相沈積(Plasma-Enhanced Chemical Vapor Deposition；PECVD)或其他可應用的沈積法。接著，例如藉由微影製程形成開口(被RDL 44的通孔部分佔據)。根據一些介電層42由光敏性材料(例如PBO、聚醯亞胺或苯並環丁烯(benzocyclobutene；BCB))形成的實施例，開口的形成包括使用微影罩幕(未繪示)對介電層42進行曝光，以及對介電層42進行顯影。金屬柱34藉由開口暴露出來。
在介電層42上方形成RDL 44。RDL 44包括通孔部分以及金屬跡線部分。通孔部分形成於介電層42中以連接至金屬柱34。金屬跡線部分位於介電層42上方。根據本揭露的一些實施例，RDL 44藉由鍍覆(plating)製程形成，所述鍍覆製程包括沈積金屬晶種層(未繪示)、在金屬晶種層上方形成光阻並圖案化所述光阻(未繪示)以及在金屬晶種層上方鍍覆金屬材料(例如銅及/或鋁)。金屬晶種層及所鍍覆的金屬材料可由相同材料或不同材料形成。隨後移除圖案化的光阻，接著蝕刻金屬晶種層的先前被圖案化的光阻覆蓋的部分。
隨後在RDL 44上方形成介電層46，接著在介電層46中形成開口。RDL 44的一些部分因此藉由開口暴露出來。介電層46可 使用選自用於形成介電層42的相同候選材料中的材料形成，所述材料可包括PBO、聚醯亞胺、BCB或其他有機材料或無機材料。隨後形成RDL 48。RDL 48亦包括通孔部分以及金屬線部分。通孔部分延伸至介電層46的開口中以與RDL 44接觸。金屬線部分位於介電層46的正上方。RDL 48的形成可與RDL 44的形成相同，其包括形成晶種層、形成圖案化的罩幕、鍍覆RDL 48以及隨後移除圖案化的罩幕及晶種層的不需要的部分。
圖3亦繪示介電層50的形成。介電層50可由選自用於形成介電層42及介電層46的候選材料的相同群組中的材料形成。舉例而言，介電層50可使用PBO、聚醯亞胺或BCB形成。開口52形成於介電層50中，以暴露出下方的金屬接墊，所述金屬接墊在示例性實施例中為RDL 48的一部分。
參照圖4，根據本揭露的一些實施例，形成凸塊下金屬(under bump metallurgy；UBM)54。UBM 54延伸至介電層50的開口中，以與RDL 48中的金屬接墊接觸。UBM 54可由鎳、銅、鈦或這些材料的多層組合形成。根據一些實施例，UBM 54包括鈦層以及位於鈦層上方的銅層。根據一些實施例，如圖4所示，存在兩層RDL(RDL44及RDL48)。根據替代實施例，存在一層RDL或三層或多於三層RDL。
隨後形成電連接件56。相應的製程在圖19所示的製程流程中被示為製程208。電連接件56的形成可包括將焊球放置於UBM 54的暴露出的部分上，並接著回焊焊球。結果，電連接件56為焊料區域，其有時被稱為C4凸塊。根據本揭露的替代實施例，電連接件56的形成包括執行鍍覆步驟，以在UBM 54上方形成焊料層， 並接著回焊焊料層。電連接件56亦可包括非焊料金屬柱或金屬柱以及位於非焊料金屬柱上方的焊蓋(solder cap)，其亦可藉由鍍覆形成。貫穿全文，位於離型膜22上方的結構稱為封裝件60，封裝件60是其中包括多個裝置晶粒24A及裝置晶粒24B的複合晶圓(且下文中也被稱為複合晶圓60)。
如圖5所示，在後續步驟中，複合晶圓60從載板20脫離。所述脫離可包括將雷射光束投射於離型膜22上，以使得離型膜22分解，並使複合晶圓60從載板20脫離。隨後沿切割線62將複合晶圓60切割為多個封裝件64，其中封裝件64中的一者如圖6所示。相應的製程在圖19所示的製程流程中被示為製程210。根據一些實施例，執行研磨製程以移除DAF 26。可對複合晶圓60執行研磨製程，以移除複合晶圓60的位於虛線61下方的部分63。根據其他實施例，不執行研磨製程。因此，封裝件64可包括或可不包括部分63。
圖6繪示橋接晶粒66與封裝件64的接合。相應的製程在圖19所示的製程流程中被示為製程212。根據本揭露的一些實施例，橋接晶粒66藉由焊料區域76貼附至UBM 54。根據本揭露的一些實施例，橋接晶粒66不含主動裝置(例如電晶體及二極體)。橋接晶粒66可具有或可不具有被動裝置(例如電容器、變壓器、電感器、電阻器及其類似物)。根據本揭露的替代實施例，橋接晶粒66包括一些主動裝置及/或被動裝置(未繪示)，且主動裝置可形成於半導體基底67的頂部表面。
橋接晶粒66可包括基底67與互連結構68。基底67可為半導體基底(例如矽基底、矽碳基底或其類似物)或介電基底(例如氧化矽基底)。互連結構68包括介電層70以及位於介電層70中的 金屬線及通孔72。介電層70可包括金屬間介電(Inter-Metal Dielectric；IMD)層。根據本揭露的一些實施例，一些介電層70由介電常數(k值)低於約3.0或低於約2.5的低k介電材料形成。介電層70可由黑金剛石(應用材料公司的註冊商標)、含碳低k介電材料、氫倍半矽氧烷(Hydrogen SilsesQuioxane；HSQ)、甲基矽倍半氧烷(MethylSilsesQuioxane；MSQ)或其類似物形成。根據本揭露的一些實施例，介電層70的形成包括：沈積含成孔劑(porogen-containing)的介電材料，並接著執行固化製程，以移除成孔劑，使得剩餘介電層70為多孔的。在金屬間介電層70之間形成蝕刻停止層(未繪示)。所述蝕刻停止層可由碳化矽、氮化矽或其類似物形成，且為簡要起見並未繪示。
金屬線及通孔72形成於介電層70中。形成製程可包括單鑲嵌製程及雙鑲嵌製程。橋接晶粒66可更包括鈍化層(亦以70表示)。鈍化層具有隔離低k介電層(若存在)及金屬線/通孔72以免受有害化學藥品及水分的不良影響的功能。鈍化層可由非低k介電材料形成，非低k介電材料例如是氧化矽、氮化矽、未經摻雜的矽酸鹽玻璃(Undoped Silicate Glass；USG)或其類似物。在鈍化層中可具有金屬接墊，例如鋁接墊(例如可由鋁銅形成)。接合接墊(或金屬凸塊)74形成於橋接晶粒66的表面處。橋接晶粒66例如藉由焊料區域76接合至UBM 54。底部填充料(underfill)(未繪示)可被點膠(dispense)於橋接晶粒66與封裝件64之間的間隙中。
橋接晶粒66電性互耦(inter-couple)裝置晶粒24A的金屬柱34與裝置晶粒24B的金屬柱34。此外，橋接晶粒66可包括與裝置晶粒24A交疊的第一部分以及與裝置晶粒24B交疊的第二部分。橋 接晶粒66可較薄，例如具有小於約50微米的厚度。
參照圖7A，將支撐晶粒80黏附至封裝件64，以形成封裝件84。相應的製程在圖19中所示的製程流程中被示為製程214。貫穿全文，由於支撐晶粒80可為其中未形成有主動裝置(例如電晶體及二極體)及被動裝置(例如電阻器、電容器以及電感器)的空白晶粒，支撐晶粒80也被稱為虛設支撐晶粒。此外，支撐晶粒80可不具有任何形成於其中的金屬線、通孔等。支撐晶粒80由剛性材料形成，所述剛性材料的楊氏模數(Young's modulus)可等於或大於矽的楊氏模數(約165吉帕(GPa)至約179吉帕)。虛設支撐晶粒80具有足夠大的厚度T2，以向其上方的封裝件64提供充足的機械支撐，進而使得封裝件64的翹曲降低至期望值。厚度T2可大於約50微米，且可在約50微米至約730微米的範圍內。此外，裝置晶粒24A/裝置晶粒24B與虛設支撐晶粒80的總厚度(T1+T2)可小於約780微米。
另外，虛設支撐晶粒80可具有良好熱導率。虛設支撐晶粒80的熱導率可接近於(例如大於90%)其上方的裝置晶粒中的半導體基底(例如矽基底)的熱導率。舉例而言，矽具有等於約148W/(m*K)的熱導率，故虛設支撐晶粒80的熱導率可大於約135W/(m*K)或更高。在虛設支撐晶粒80具有高熱導率的情況下，所得結構中的散熱性(thermal dissipation)提高。
根據本揭露的一些實施例，虛設支撐晶粒80由金屬或金屬合金、半導體材料或介電材料形成。舉例而言，當包括金屬時，虛設支撐晶粒80可由銅、鋁、鎳、不鏽鋼或其類似物形成，因此根據一些實施例為金屬膜/金屬板。當由半導體材料形成時，虛設 支撐晶粒80可為空白(blank)矽晶粒。當由介電材料形成時，虛設支撐晶粒80可由陶瓷形成。另外，虛設支撐晶粒80的材料可為同質(homogeneous)的。舉例而言，整個虛設支撐晶粒80可由相同材料形成，所述材料在虛設支撐晶粒80的所有部分中包括相同元素，且所述元素的原子百分比在整個虛設支撐晶粒80中可為均勻的。根據虛設支撐晶粒80由矽形成的一些實施例，虛設支撐晶粒80中摻有p型雜質或n型雜質。根據虛設支撐晶粒80由矽形成的替代實施例，沒有p型雜質及n型雜質摻雜於虛設支撐晶粒80中。
根據一些實施例，黏著劑82由熱介面材料(Thermal Interface Material；TIM)形成，所述熱介面材料具有相對較高的熱導率，例如高於約1.0W/(m*K)或高於約5.0W/(m*K)。
封裝件64亦接合至封裝組件85。封裝組件85可為封裝基底、印刷電路板、封裝件或其類似物。相應的製程在圖19中所示的製程流程中被示為製程216。所得封裝件被稱為封裝件87。封裝組件85與封裝件64可藉由電連接件56接合，電連接件56可包括焊料區域。
圖7B繪示封裝件84的一些部分的上視圖。根據一些實施例，虛設支撐晶粒80在四個方向(+X、-X、+Y以及-Y)上具有延伸超出封裝件64的邊緣的延伸部分，且所述延伸部分具有延伸寬度W1及延伸寬度W2。延伸寬度W1及延伸寬度W2可大於約50微米，且可在約50微米至約100微米的範圍內。將虛設支撐晶粒80的長度及寬度增加至大於相應的封裝件64的長度及寬度提高了封裝件84對翹曲的抵抗力。
根據一些實施例，延伸寬度W2等於延伸寬度W1。根據本 揭露的一些實施例，封裝件64及虛設支撐晶粒80均為細長(elongated)的，其中封裝件84具有長度Lpkg以及小於長度Lpkg的寬度Wpkg。舉例而言，比率Lpkg/Wpkg可大於約1.5。封裝件84的長邊比短邊更有可能翹曲，且在長邊上比在短邊上可能需要(至少等量或)更大的支撐。根據一些實施例，延伸寬度W2大於延伸寬度W1，以使得虛設支撐晶粒80(及封裝件84)沒有封裝件64那麼細長。根據本揭露的一些實施例，延伸寬度W1及延伸寬度W2兩者均具有非零值。比率W2/W1可等於或大於比率Lpkg/Wpkg，以對長度Lpkg與寬度Wpkg之間的差提供足夠的補償。舉例而言，比率W2/W1可大於約1.5。
根據其他實施例，寬度W2大於約50微米，且可在約50微米至約100微米的範圍內。另一方面，寬度W1等於0微米。這提高了細長封裝件84對翹曲的抵抗力，而並不過度增加封裝件84的長度(footage)。
圖8至圖14A繪示根據本揭露一些實施例的形成InFO封裝件的中間步驟的剖視圖。除非另有指定，否則這些實施例中的組件的材料及形成方法與圖1至圖7A及圖7B所示實施例中的以類似附圖標號所表示的類似組件基本相同。因此可在圖1至圖7A及圖7B中所示的實施例的論述中找到關於圖8至圖14A及圖14B中所示的組件的形成製程及材料的細節。圖8至圖14A中所示的步驟亦示意性地反映在圖20中所示的製程流程300中。
參照圖8，將虛設支撐晶粒80放置於離型膜22上方，所述離型膜22塗佈於載板20上。相應的製程在圖20中所示的製程流程中被示為製程302。隨後，參照圖9A，形成包封材料86，其包括點 膠(dispense)並固化包封材料86。相應的製程在圖20中所示的製程流程中被示為製程304。執行平坦化製程(例如CMP製程或機械研磨製程)，以使包封材料86的頂部表面與虛設支撐晶粒80的頂部表面齊平。根據替代實施例，省略包封材料86的形成及相應的平坦化製程。
圖9B繪示圖9A所示的結構的上視圖。根據一些實施例，虛設支撐晶粒80包括虛設支撐晶粒80A以及虛設支撐晶粒80B，虛設支撐晶粒80B位於相應虛設支撐晶粒80A的相對側邊。虛設支撐晶粒80B可比虛設支撐晶粒80A更細長。虛設支撐晶粒80A及虛設支撐晶粒80B單獨地並統稱為虛設支撐晶粒80。
圖10繪示裝置(晶粒)24A及裝置(晶粒)24B的放置。裝置(晶粒)24A及裝置(晶粒)24B藉由DAF 26放置於虛設支撐晶粒80上。相應的製程在圖20所示的製程流程中被示為製程306。根據一些已形成包封材料86的實施例，裝置晶粒24A及裝置晶粒24B的一些部分與包封材料86交疊。根據其他未形成包封材料86的實施例，裝置晶粒24A及裝置晶粒24B的一些部分在此步驟懸置(suspended)。
圖11繪示將裝置晶粒24A及裝置晶粒24B包封於包封材料40中，其包括點膠並固化包封材料40，以及執行平坦化以露出金屬柱34。相應的製程在圖20中所示的製程流程中被示為製程308。根據一些已形成包封材料86的實施例，在包封材料40與包封材料86之間具有可辨識的介面。舉例而言，圖15繪示圖11中的被放大的區域88。包封材料86包括基材86B以及基材86B中的填充料顆粒86A。包封材料40包括基材40B以及基材40B中的填充料顆粒40A。 由於包封材料40包封於經平坦化的包封材料86上，且未對包封材料40的與包封材料86接觸的部分執行平坦化，因此與包封材料86接觸的球形顆粒40A為圓形，且其圓形表面與包封材料86接觸。作為比較，包封材料86的與包封材料40接觸的部分已在圖9A所示的步驟中被平坦化。因此，與包封材料40相接觸的球形顆粒86A在平坦化期間被部分切割，且因此將具有與包封材料40接觸的實質上平坦的頂部表面(而非圓形頂部表面)。
根據其他未形成包封材料86的實施例，包封材料40將填充至虛設支撐晶粒80A與虛設支撐晶粒80B之間的間隙中。包封材料40因此包括下部部分與上部部分。下部部分與虛設支撐晶粒80A及虛設支撐晶粒80B齊平。上部部分與裝置晶粒24A及裝置晶粒24B齊平。根據這些實施例，由於包封材料40的下部部分及上部部分形成於共同的製程中且使用相同材料，因此在下部部分與上部部分之間沒有可辨識的介面。
圖12繪示繼續形成複合晶圓60，其包括形成介電層42、介電層46與介電層50以及RDL 44與RDL 48。相應的製程在圖20中所示的製程流程中被示為製程310。亦形成UBM 54及電連接件56。相應的製程在圖20所示的製程流程中被示為製程312。在後續步驟中，複合晶圓60從載板20脫離，且隨後被切割為單獨封裝件64。相應的製程在圖20所示的製程流程中被示為製程314。所得封裝件64中的一者繪示於圖13中。
如圖14A中所示，在後續步驟中，橋接晶粒66接合至封裝件64，以電性互耦裝置晶粒24A與裝置晶粒24B。相應的製程在圖20所示的製程流程中被示為製程316。封裝件84即已形成。接著， 將封裝件64接合至封裝組件85，封裝組件85可為封裝基底、印刷電路板、封裝件或其類似物。所得封裝件被稱為封裝件87。
圖14B繪示封裝件84的一些部分的上視圖。根據一些實施例，具有若干虛設支撐晶粒80共同支撐上方結構。虛設支撐晶粒80B的長度LB小於封裝件84的長度Lpkg。長度Lpkg與長度LB之差Lpkg-LB可大於約50微米，且可在約50微米至約100微米的範圍內。虛設支撐晶粒80B的寬度WB可等於或大於封裝件84的寬度Wpkg的約¼。虛設支撐晶粒80A的寬度WA可大於約10微米。虛設支撐晶粒80A與虛設支撐晶粒80B之間的間距S2可大於約10微米。虛設支撐晶粒80A的長度LA與橋接晶粒66的長度LSB之間的差(LA-LSB)可大於約100微米，且可在約100微米至約200微米的範圍內。
採用多個虛設支撐晶粒而非單個較大虛設支撐晶粒具有將翹曲調節至期望值的有利特徵。舉例而言，當封裝件84接合至封裝組件85(圖14A)時，由於封裝組件85在熱循環期間亦具有翹曲，若封裝件84與封裝組件85朝相同方向翹曲(例如兩者均為中間部分低於邊緣部分)，則可期望封裝件84具有與封裝組件85相同程度的翹曲，而非封裝件84完全不翹曲。這是因為如果封裝組件85翹曲而封裝件84不翹曲，則也可能出現冷接合點(cold joint)或焊料橋接(solder bridging)。形成三個虛設支撐晶粒可提供虛設支撐晶粒80A於橋接晶粒66正下方，以支撐橋接晶粒66。另一方面，可調節虛設支撐晶粒80B的長度LB及寬度WB，以調節封裝件84的翹曲，從而使得封裝件84及封裝組件85在熱循環中具有相同程度的翹曲。
圖16至圖18繪示根據一些實施例的形成封裝件87的中間步驟。圖16繪示複合晶圓60的形成。複合晶圓60的形成製程可與圖1至圖4所示的基本相同，不同之處在於，圖1至圖4所示的載板20被替換為支撐晶圓80(圖16)，以支撐其上方的裝置晶粒24A及裝置晶粒24B。另外，在支撐晶圓80與其上方的DAF 26之間沒有形成離型膜。
可在參照圖1至圖4的論述中找到用於形成圖16所示的封裝件84的製程細節、結構以及材料，於此不再重複。在形成圖16所示的重構晶圓(reconstructed wafer)60之後，沿切割線62執行晶粒切割製程，得到圖17所示的封裝件84。在切割相應的複合(重構)晶圓60(圖16)時，支撐晶圓80也被切割，且在所得封裝件84中保留一片支撐晶圓80。所述一片支撐晶圓80也被稱為支撐晶粒80。根據本揭露的一些實施例，支撐晶圓/支撐晶粒80的材料選自與前述實施例中所論述的候選材料相同的群組。支撐晶粒80及其上方的裝置晶粒24A/裝置晶粒24B的厚度可與前述段落中所論述的類似，於此不再重複。由於支撐晶圓80與其上方的包封材料40一起被切割，支撐晶粒80的邊緣與包封材料40的相應邊緣對齊。另外，DAF 26可具有與支撐晶粒80及裝置晶粒24A/裝置晶粒24B接觸的相對表面。
參照圖18，將封裝件84接合至封裝組件85。封裝組件85可為封裝基底、印刷電路板、封裝件或其類似物。所得封裝件被稱為封裝件87。
在上述實施例中，根據本揭露的一些實施例來論述一些製程及特徵。亦可包括其他特徵及製程。舉例而言，可包括測試 結構，以對三維(3D)封裝或三維積體電路(3DIC)裝置進行驗證測試。所述測試結構可包括例如在重佈線層中或基底上形成的測試接墊(test pad)，所述測試接墊能夠測試3D封裝或3DIC、使用探針及/或探針卡(probe card)等。可對中間結構以及最終結構進行驗證測試。另外，本文中所揭露的結構及方法可與包括對已知良好晶粒(known good die)進行中間驗證的測試方法結合使用，以提高良率並降低成本。
本揭露的實施例具有一些有利特徵。多堆疊(Multi-stacking)封裝件可能變得非常薄。較薄的多堆疊封裝件遭受翹曲，且在使用細長裝置晶粒時翹曲更嚴重。因此，在多堆疊封裝件中增加剛性虛設支撐晶粒，以提供機械支撐，使得翹曲降低。虛設支撐晶粒亦由具有良好熱導率的材料形成，以使得虛設支撐晶粒可易於將熱量從封裝件傳導出去，並使得多堆疊封裝件的散熱性(thermal dissipation)提高。
根據本揭露的一些實施例，一種封裝件的形成方法包括：將第一裝置晶粒及第二裝置晶粒包封於包封材料中；在第一裝置晶粒及第二裝置晶粒上方形成重佈線，所述重佈線電性耦接至第一裝置晶粒及第二裝置晶粒；以及將橋接晶粒接合於重佈線上方以形成封裝件。所述封裝件包括第一裝置晶粒、第二裝置晶粒以及橋接晶粒。橋接晶粒電性互耦第一裝置晶粒與第二裝置晶粒。第一裝置晶粒、第二裝置晶粒以及橋接晶粒由虛設支撐晶粒來支撐。在一實施例中，所述支撐包括藉由黏著劑將虛設支撐晶粒貼附至封裝件。在一實施例中，所述封裝件的形成方法更包括切割包封材料，以形成封裝件，其中虛設支撐晶粒在切割之後貼 附至封裝件。在一實施例中，虛設支撐晶粒延伸超出封裝件的第一邊緣及第二邊緣，且虛設支撐晶粒包括與封裝件的第三邊緣及第四邊緣對齊的相對邊緣，其中第三邊緣與第四邊緣彼此平行且垂直於第一邊緣及第二邊緣。在一實施例中，虛設支撐晶粒在四個方向上延伸超出封裝件的四個邊緣。在一實施例中，虛設支撐晶粒包括空白矽晶粒。在一實施例中，虛設支撐晶粒包括金屬晶粒。在一實施例中，所述封裝件的形成方法更包括將虛設支撐晶粒放置於載板上；將虛設支撐晶粒包封於額外包封材料中；以及將第一裝置晶粒及第二裝置晶粒放置於虛設支撐晶粒及額外包封材料上。在一實施例中，所述支撐更包括將載板從封裝件的與橋接晶粒相對的一側脫離。在一實施例中，將虛設支撐晶粒貼附至封裝件包括將虛設支撐晶粒貼附至封裝件的與橋接晶粒相對的一側。在一實施例中，所述封裝件的形成方法更包括切割包封材料，以形成封裝件，其中在所述切割中，支撐晶圓被切割開，且虛設支撐晶粒為支撐晶圓的一部分。在一實施例中，所述封裝件的形成方法更包括使用晶粒貼合膜將第一裝置晶粒及第二裝置晶粒貼附至支撐晶圓。
根據本揭露的一些實施例，一種封裝件的形成方法包括：將第一裝置晶粒及第二裝置晶粒包封於包封材料中；在第一裝置晶粒及第二裝置晶粒上方形成重佈線；在第一裝置晶粒及第二裝置晶粒上方形成電連接件，所述電連接件藉由重佈線電性耦接至第一裝置晶粒及第二裝置晶粒；對包封材料執行單體化，其中第一裝置晶粒及第二裝置晶粒被切割成封裝件；以及將封裝件貼附至虛設支撐晶粒。在一實施例中，虛設支撐晶粒在四個側向 方向中的每個方向上延伸超出封裝件的邊緣。在一實施例中，在封裝件的上視圖中，封裝件為細長的且包括長邊緣以及短邊緣，短邊緣垂直於且短於長邊緣。虛設支撐晶粒延伸超出短邊緣，且具有與長邊緣對齊的邊緣。在一實施例中，所述封裝件的形成方法更包括將橋接晶粒接合至封裝件，其中橋接晶粒位於重佈線的與第一裝置晶粒及第二裝置晶粒相對的一側上。在一實施例中，橋接晶粒經接合以具有與第一裝置晶粒交疊的第一部分以及與第二裝置晶粒交疊的第二部分。在一實施例中，將封裝件貼附至虛設支撐晶粒包括：將支撐晶圓貼附至封裝件；以及切割包封材料及支撐晶圓，其中支撐晶圓的一片形成虛設支撐晶粒。在一實施例中，虛設支撐晶粒包括虛設矽晶粒。在一實施例中，虛設支撐晶粒包括金屬晶粒。
根據本揭露的一些實施例，一種封裝件包括第一裝置晶粒、第二裝置晶粒、第一包封材料、多個重佈線、橋接晶粒以及虛設支撐晶粒。第一包封材料將第一裝置晶粒及第二裝置晶粒包封於其中。多個重佈線位於第一裝置晶粒及第二裝置晶粒上方且電性耦接至第一裝置晶粒及第二裝置晶粒。橋接晶粒位於重佈線上方並接合至重佈線，其中橋接晶粒電性互耦第一裝置晶粒與第二裝置晶粒。虛設支撐晶粒位於第一裝置晶粒及第二裝置晶粒下方且貼附至第一裝置晶粒及第二裝置晶粒。在一實施例中，橋接晶粒包括與第一裝置晶粒交疊的第一部分以及與第二裝置晶粒交疊的第二部分。在一實施例中，封裝件更包括將第一裝置晶粒及第二裝置晶粒貼附至虛設支撐晶粒的黏著膜。在一實施例中，封裝件更包括將虛設支撐晶粒包封於其中的第二包封材料。在一實 施例中，第一包封材料與第二包封材料接觸，其中在第一包封材料與第二包封材料之間具有可辨識的介面。在一實施例中，虛設支撐晶粒側向延伸超出第一包封材料的邊緣。
以上概述了數個實施例的特徵，使本領域具有通常知識者可更佳瞭解本揭露的態樣。本領域具有通常知識者應理解，其可輕易地使用本揭露做為設計或修改其他製程與結構的依據，以實現本文所介紹的實施例的相同目的及/或達到相同優點。本領域具有通常知識者還應理解，這種等效的配置並不悖離本揭露的精神與範疇，且本領域具有通常知識者在不悖離本揭露的精神與範疇的情況下可對本文做出各種改變、置換以及變更。
24A、24B‧‧‧裝置晶粒
26‧‧‧晶粒貼合膜
28A、28B‧‧‧半導體基底
30A、30B‧‧‧積體電路裝置
34‧‧‧金屬柱
36、42、46、50、70‧‧‧介電層
40‧‧‧包封材料
44、48‧‧‧重佈線
54‧‧‧凸塊下金屬
56‧‧‧電連接件
64、84、87‧‧‧封裝件
61‧‧‧虛線
63‧‧‧部分
66‧‧‧橋接晶粒
72‧‧‧金屬線及通孔
74‧‧‧接合接墊
76‧‧‧焊料區域
80‧‧‧虛設支撐晶粒
82‧‧‧黏著劑
85‧‧‧封裝組件
T1、T2‧‧‧厚度
W1、W2‧‧‧延伸寬度

Claims (10)

  1. 一種封裝件的形成方法，包括：將第一裝置晶粒及第二裝置晶粒包封於包封材料中；在所述第一裝置晶粒及所述第二裝置晶粒上方形成重佈線，所述重佈線電性耦接至所述第一裝置晶粒及所述第二裝置晶粒；將橋接晶粒接合於所述重佈線上方，以形成封裝件，所述封裝件包括所述第一裝置晶粒、所述第二裝置晶粒以及所述橋接晶粒，其中所述橋接晶粒電性互耦所述第一裝置晶粒與所述第二裝置晶粒；以及以虛設支撐晶粒支撐所述封裝件，其中所述虛設支撐晶粒包括第一虛設支撐晶粒以及第二虛設支撐晶粒，且所述第一虛設支撐晶粒比所述第二虛設晶粒更細長。
  2. 如申請專利範圍第1項所述的封裝件的形成方法，其中所述第二虛設晶粒設置於所述橋接晶粒正下方。
  3. 如申請專利範圍第1項所述的封裝件的形成方法，更包括將所述虛設支撐晶粒包封於額外包封材料中，其中所述額外包封材料與所述包封材料接觸，且在所述包封材料與所述額外包封材料之間具有可辨識的介面。
  4. 如申請專利範圍第1項所述的封裝件的形成方法，更包括：將所述虛設支撐晶粒放置於載板上；將所述虛設支撐晶粒包封於額外包封材料中；以及將所述第一裝置晶粒及所述第二裝置晶粒放置於所述虛設支撐晶粒及所述額外包封材料上。
  5. 一種封裝件的形成方法，包括：將第一裝置晶粒及第二裝置晶粒包封於包封材料中；在所述第一裝置晶粒及所述第二裝置晶粒上方形成重佈線；在所述第一裝置晶粒及所述第二裝置晶粒上方形成電連接件，所述電連接件藉由所述重佈線電性耦接至所述第一裝置晶粒及所述第二裝置晶粒；對所述包封材料執行單體化，其中所述第一裝置晶粒及所述第二裝置晶粒被切割，以形成封裝件；以及將所述封裝件貼附至虛設支撐晶粒，其中所述虛設支撐晶粒側向地延伸超出所述封裝件的邊緣。
  6. 如申請專利範圍第5項所述的封裝件的形成方法，其中所述虛設支撐晶粒在四個側向方向中的每個方向上延伸超出所述封裝件的所述邊緣。
  7. 如申請專利範圍第5項所述的封裝件的形成方法，其中在所述封裝件的上視圖中，所述封裝件為細長的且包括長邊緣以及短邊緣，所述短邊緣垂直於且短於所述長邊緣，以及所述虛設支撐晶粒延伸超出所述短邊緣，且具有與所述長邊緣對齊的邊緣。
  8. 如申請專利範圍第5項所述的封裝件的形成方法，其中所述將所述封裝件藉由熱介面材料貼附至所述虛設支撐晶粒。
  9. 一種封裝件，包括：第一裝置晶粒；第二裝置晶粒；第一包封材料，將所述第一裝置晶粒及所述第二裝置晶粒包封於其中； 多個重佈線，位於所述第一裝置晶粒及所述第二裝置晶粒上方並電性耦接至所述第一裝置晶粒及所述第二裝置晶粒；橋接晶粒，位於所述重佈線上方並接合至所述重佈線，其中所述橋接晶粒電性互耦所述第一裝置晶粒與所述第二裝置晶粒；以及虛設支撐晶粒，位於所述第一裝置晶粒及所述第二裝置晶粒下方，且貼附至所述第一裝置晶粒及所述第二裝置晶粒，其中所述虛設支撐晶粒側向地延伸超出所述第一包封材料的邊緣。
  10. 如申請專利範圍第9項所述的封裝件，其中所述虛設支撐晶粒在四個側向方向中的至少兩個側向方向上延伸超出所述第一包封材料的所述邊緣。
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