CN110600590B - 微型发光二极管的转移方法和显示面板 - Google Patents

微型发光二极管的转移方法和显示面板 Download PDF

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CN110600590B
CN110600590B CN201910913489.4A CN201910913489A CN110600590B CN 110600590 B CN110600590 B CN 110600590B CN 201910913489 A CN201910913489 A CN 201910913489A CN 110600590 B CN110600590 B CN 110600590B
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micro light
emitting diode
carrier plate
carrier
abnormal
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CN110600590A (zh
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樊勇
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本申请所提供的微型发光二极管的转移方法中,所述方法包括:提供阵列基板,阵列基板具有安装层,安装层设置有若干通孔,通孔用于暴露阵列基板的像素电极,通孔中组装有微型发光二极管,然后,提供第一载板,将异常的微型发光二极管吸附于第一载板,异常的微型发光二极管为电极部朝向通孔的开口部的部分,以及提供第二载板,将异常的微型发光二极管粘附于第二载板的激光形变胶层,再然后,采用激光照射激光形变胶层,翻转异常的微型发光二极管,再提供第三载板,将异常的微型发光二极管转移至第三载板,并将异常的微型发光二极管转移至通孔。提高了微型发光二极管的转移和组装的效率。

Description

微型发光二极管的转移方法和显示面板
技术领域
本申请涉及显示技术领域,具体涉及一种微型发光二极管转移方法和显示面板。
背景技术
近年来,随着科学技术的发展,为了满足用户对显示质量的高要求,科技工作者从对普通的发光二极管(Light Emitting Diode,LED)研究逐渐转向对微型发光二极管(Micro LED)的研究。
微型发光二极管是将普通的发光二极管的尺寸微缩至原来的1%,微型发光二极管的长度在100微米以下。目前,在将微型发光二极管器件转移到阵列基板的过程中,存在微型发光二极管器件倒置和微型发光二极管器件正负电极错位等情况,影响了微型发光二极管器件的转移和组装的效率。
发明内容
本申请提供的一种微型发光二极管转移方法,以提高微型发光二极管器件的转移和组装的效率。
本申请提供的一种微型发光二极管转移方法,包括:
提供一阵列基板,所述阵列基板上具有安装层,所述安装层设置有若干通孔,所述通孔用于暴露所述阵列基板的像素电极;
微型发光二极管转移到所述安装层上对应的通孔里,每一所述微型发光二极管包括发光部和电极部,所述电极部位于所述发光部的一侧;
提供一第一载板,将所述阵列基板上异常的微型发光二极管吸附于所述第一载板,所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管;
提供一第二载板,所述第二载板表面具有激光形变胶层,将所述第一载板上的所述异常的微型发光二极管粘附于所述第二载板的激光形变胶层;
采用激光照射所述激光形变胶层,翻转所述异常的微型发光二极管;
提供一第三载板,将所述第二载板上异常的微型发光二极管转移至所述第三载板;
将所述第三载板上的异常的微型发光二极管转移至所述安装层的通孔中。
在本申请所提供的微型发光二极管转移方法中,所述通孔的形状为等腰梯形。
在本申请所提供的微型发光二极管转移方法中,所述微型发光二极管的形状为等腰梯形,所述微型发光二极管包括相对设置的第一边和第二边,所述第一边位于所述等腰梯形的长边,所述第二边位于所述等腰梯形的短边,所述电极部包括第一电极和第二电极,所述第一电极位于所述第一边,所述第二电极位于所述第二边。
在本申请所提供的微型发光二极管转移方法中,所述提供一第一载板,将所述异常的微型发光二极管吸附于所述第一载板,所述异常的微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管的步骤,包括,提供一第一载板,所述第一载板涂覆导电层,对所述第一载板施加电压,通过静电力吸附原理将异常的微型发光二极管吸附于第一载板。
在本申请所提供的微型发光二极管转移方法中,所述提供一第二载板,所述第二载板表面具有激光形变胶层,将所述第一载板上的所述异常的微型发光二极管粘附于所述第二载板的激光形变胶层的步骤,包括,提供一第二载板,在所述第二载板上涂覆激光形变胶层,所述激光形变胶层包括丙烯酸树脂类材料、光敏剂和增粘剂。
在本申请所提供的微型发光二极管转移方法中,所述采用激光照射设置有所述异常的激光形变胶层,翻转所述异常的微型发光二极管,包括,采用激光照射设置有所述异常的微型发光二极管的激光形变胶层,围绕每一所述异常的微型发光二极管的对称轴逐一翻转所述异常的微型发光二极管。
在本申请所提供的微型发光二极管转移方法中,所述第三载板的表面具有胶层,在所述将所述异常的微型发光二极管从所述第二载板转移至所述第三载板的步骤后,所述异常的微型发光二极管粘附于所述胶层。
在本申请所提供的微型发光二极管转移方法中,所述第三载板上有金属层,对所述金属层通电使得所述异常的微型发光二极管从所述第二载板上吸附至所述第三载板。
本申请提供一种显示面板,所述显示面板包括:
阵列基板,所述阵列基板上具有安装层,所述安装层设置有若干通孔,所述通孔用于暴露所述阵列基板的像素电极;
若干微型发光二极管,所述微型发光二极管位于所述安装层的通孔,所述微型发光二极管与所述阵列基板电连接,每一所述微型发光二极管包括:
发光部,所述发光部朝向所述安装层的通孔的开口部;以及
电极部,所述电极部位于所述发光部的一侧,所述电极部朝向所述安装层的通孔的底部。
在本申请所提供的显示面板中,所述通孔的形状与所述微型发光二极管的形状为等腰梯形。
本申请提供一种微型发光二极管的转移方法和显示面板,在所述微型发光二极管的转移方法中,提供一阵列基板,所述阵列基板上具有安装层,所述安装层设置有若干通孔,所述通孔用于暴露所述阵列基板的像素电极,将微型发光二极管转移到所述安装层对应的通孔里,,所述通孔的形状和所述微型发光二极管的形状为等腰梯形,每一所述微型发光二极管包括发光部和电极部,所述电极部位于所述发光部的一侧,提供一第一载板,将所述阵列基板上异常的微型发光二极管吸附于所述第一载板,所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管,提供一第二载板,所述第二载板表面具有激光形变胶层,将所述第一载板上的异常的微型发光二极管粘附于所述第二载板的激光形变胶层,采用激光照射设置有所述异常的微型发光二极管的激光形变胶层,逐一翻转所述异常的微型发光二极管,提供一第三载板,将所述第二载板上异常的微型发光二极管转移至所述第三载板,将所述第三载板上异常的微型发光二极管转移至所述安装层的通孔中,在本申请中,所述安装层的通孔的形状和所述微型发光二极管的形状为等腰梯形,所述微型发光二极管可以通过毛刷、震动或流体方式进行组装,从而避免了所述微型发光二极管的正负极错位的情况,在本申请中,采用激光照射设置有所述异常的微型发光二极管的激光形变胶层,逐一翻转所述异常的微型发光二极管,即将倒置的微型发光二极管进行翻转,从而快速的翻转的所述倒置的微型发光二极管,因此,本申请提供的微型发光二极管的转移方法和显示面板提高了微发型光二极管的转移和组装的效率。
附图说明
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本申请提供的微型发光二极管的转移方法的流程图。
图2是本申请提供的阵列基板的俯视图。
图3是本申请提供的阵列基板的剖视图。
图4是本申请提供的设置有微型发光二极管的阵列基板的剖视图。
图5是本申请提供的微型发光二极管的剖视图。
图6是本申请提供的微型发光二极管的俯视图。
图7是本申请提供的微型发光二极管的仰视图。
图8是本申请提供的微型发光二极管从阵列基板转移至第一载板的剖视图。
图9是本申请提供的微型发光二极管从第一载板转移至第二载板的剖视图。
图10是本申请提供的微型发光二极管从第二载板转移至第三载板的剖视图。
图11是本申请提供的微型发光二极管从第二载板转移至第三载板的另一种的剖视图。
图12是本申请提供的微型发光二极管从第三载板转移至阵列基板的剖视图。
图13是本申请提供的显示面板的剖视图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
请参阅图1,图1为本申请提供的微型发光二极管的转移方法的流程示意图。本申请提供微型发光二极管的转移方法。所述方法包括:
110、提供一阵列基板10,所述阵列基板10上具有安装层40,所述安装层40设置有若干通孔20,所述通孔20用于暴露所述阵列基板10的像素电极。
请参阅图2,图2是本申请提供的阵列基板的俯视图。请参阅图3,图3是本申请提供的阵列基板的剖视图。所述阵列基板10应用于液晶显示器。所述安装层40设置于有所述像素电极的阵列基板10的一面。所述安装层40用于设置有若干通孔20,以放置微型发光二极管30,所述通孔20的形状为等腰梯形。
120、将微型发光二极管30转移到所述安装层对应的通孔20里。每一所述微型发光二极管30包括发光部301和电极部302。所述电极部302位于所述发光部301的一侧。
请参阅图4,图4是本申请提供的设置有微型发光二极管的阵列基板的剖视图。所述微型发光二极管30是将普通的发光二极管的尺寸微缩至原来的1%,所述微型发光二极管的长度在100微米以下。在所述安装层40的通孔20中组装有所述微型发光二极管30。每一所述微型发光二极管30可通过毛刷、震动或流体等方式,将每一所述微型发光二极管30组装在所述安装层40的通孔20。具体的,可通过转接头将载体基板上的阵列排布的所述微型发光二极管30转移到所述安装层40的通孔20里,直至每一所述安装层40的通孔20组装上所述微型发光二极管30。
请参阅图5,图5是本申请提供的微型发光二极管的剖视图。请参阅图6,图6是本申请提供的微型发光二极管的俯视图。所述微型发光二极管30的形状与通孔20的形状相同,形状为等腰梯形,以避免所述微型发光二极管30在组装过程中的所述微型发光二极管30的正负电极错位。
请参阅图7,图7是本申请提供的微型发光二极管的仰视图。所述微型发光二极管30的电极部302包括第一电极3021和第二电极3022。所述第一电极3021与所述第二电极3022分别位于所述微型发光二极管30的两侧。所述微型发光二极管30的第一电极3021为负极,所述微型发光二极管30的第二电极3022为正极,即所述微型发光二极管30的负极3021和所述微型发光二极管30的正极3022分别位于等腰梯形的长边和短边。在一些实施例,所述微型发光二极管30的第一电极3021为正极,所述微型发光二极管30的第二电极3022为负极。
130、提供一第一载板901,将所述阵列基板10上异常的微型发光二极管31吸附于所述第一载板901,所述异常的微型发光二极管31为电极部302朝向所述通孔的开口的微型发光二极管31。
请参阅图8,图8是本申请提供的微型发光二极管从阵列基板转移至第一载板的剖视图。所述第一载板901用于承载并转移所述异常的微型发光二极管31。在所述第一载板901涂覆导电层902。利用所述第一载板901的导电层902的导电性,对所述第一载板901的导电层902施加电压,所述第一载板901的导电层902在电场的作用下吸附所述异常的微型发光二极管31的电极部302,使得所述异常的微型发光二极管31从所述阵列基板10吸附至所述第一载板901的导电层902。即将所述倒置的微型发光二极管31转移至所述第一载板901的导电层902。
因所述异常的微型发光二极管31的电极部302朝向所述安装层40的通孔20的开口部,静电力大,所述异常的微型发光二极管31可从所述阵列基板10吸附至所述第一载板901的导电层902。而所述正常的微型发光二极管32的电极部302朝向所述安装层40的通孔20的底部,静电力小,无法从所述阵列基板10吸附至所述第一载板901的导电层902,可避免将所述正常的微型发光二极管32吸附至所述第一载板901的导电层902。
140、提供一第二载板101,所述第二载板101表面具有激光形变胶层102,将所述第一载板101上的所述异常的微型发光二极管31粘附于所述第二载板101的激光形变胶层102。
请参阅图9,图9是本申请提供的微型发光二极管从第一载板转移至第二载板的剖视图。所述第二载板101用于承载并转移所述异常的微型发光二极管31。在第二载板101上涂覆激光形变胶层102。所涂覆的激光形变胶层102的厚度均匀和激光形变胶层102的粘度相同。利用在所述第二载板101的激光形变胶层102的粘附作用,可将所述第一载板901的导电层902上的异常的微型发光二极管31粘附于所述第二载板101的激光形变胶层102。所述第二载板101的激光形变胶层102包括丙烯酸树脂类材料、光敏剂和增粘剂。
150、采用激光照射所述激光形变胶层901,翻转所述异常的微型发光二极管31。
利用所述第二载板101上的激光形变胶层102对激光具有感光形变的作用。采用激光从所述第二载板101的底部垂直于所述异常的微型发光二极管31的发光部301照射设置有所述异常的微型发光二极管31的激光形变胶层102,沿每一所述异常的微型发光二极管31的对称轴A-A逐一翻转所述异常的微型发光二极管31,并在每一所述异常的微型发光二极管31翻转的方向上移动相同距离。
控制每一次激光照射所述微型发光二极管31的能量大小、光斑大小、光斑形状和位置相同,以使得沿所述微型发光二极管31的对称轴A-A进行翻转时,每一所述异常的微型发光二极管31的翻转方向和移动距离相一致。
所述微型发光二极管31的翻转方向的角度可以为90度、150度或180度等,所述微型发光二极管31的移动距离可以是1厘米、2厘米或3厘米等,可根据具体需求移动至所需距离。此处所述微型发光二极管31的翻转角度为180度,并在翻转角度的方向上移动相同距离。
160、提供一第三载板111,将所述第二载板101上的异常的微型发光二极管31转移至第三载板111。
请参阅图10,图10是本申请提供的微型发光二极管从第二载板转移至第三载板的剖视图。所述第三载板111用于承载并转移所述异常的微型发光二极管31。在所述第三载板111表面涂覆胶层112。利用所述第三载板111的胶层112的对物质的粘附性,所述第三载板的胶层112粘附所述异常的微型发光二极管31的电极部302,可将所述第二载板101上所述异常的微型发光二极管31转移至所述第三载板111的胶层112。
所述第三载板111的胶层112可以为聚二甲基硅氧烷胶层或丙烯酸树脂胶层。
请参阅图11,图11是本申请提供的微型发光二极管从第二载板转移至第三载板的另一种的剖视图。在其它实施例中,在所述第三载板111上涂覆金属层113。利用所述第三载板111的金属层113的导电性,对所述第三载板的金属层113施加电压,使得所述第二载板101所述异常的微型发光二极管31吸附至所述第三载板的金属层113。
其中,所述第三载板111上涂覆的金属层113可以是Cu、Al、Ag、Au、Cr或Mo等。
170、将所述第三载板111上的所述异常的微型发光二极管31转移至所述阵列基板10的通孔20中。
请参阅图12,图12是本申请提供的微型发光二极管从第三载板转移至阵列基板的剖视图。请参阅图13,图13是本申请提供的显示面板的剖视图。将所述第三载板的胶层112的异常的微型发光二极管31转移至所述安装层40的通孔20中。
本申请还提供一种显示面板,请参阅图13,图13为本申请所提供的显示面板的剖视图。
所述显示面板包括阵列基板10、通孔20、安装层40、微型发光二极管32、微型发光二极管32的电极部302和微型发光二极管32的发光部301。
请参阅图2和图3,图2为本申请提供的阵列基板的俯视图,图3为本申请提供的阵列基板的剖视图。所述阵列基板10上具有安装层40,所述安装层40设置有若干通孔20,所述通孔20用于暴露所述阵列基板10的像素电极,所述通孔20位于所述阵列基板10上的安装层40,所述通孔20的形状为等腰梯形。所述微型发光二极管32位于所述阵列基板10的通孔20。请参阅图6,图6是本申请提供的微型发光二极管的俯视图。所述微型发光二极管32的形状为等腰梯形。请参阅图5,图5是本申请提供的微型发光二极管的仰视图。所述微型发光二极管32包括发光部301和电极部302。所述微型发光二极管32的发光部301朝向所述通孔20的开口部。所述微型发光二极管32的电极部302位于所述发光部301的一侧。所述微型发光二极管32的电极部302朝向所述通孔20的底部。
所述微型发光二极管32的电极部302包括第一电极3021和第二电极3022。所述微型发光二极管32具有第一边和第二边。所述第一电极3021位于所述微型发光二极管32的第一边。所述第二电极3022位于所述微型发光二极管32的第二边。所述微型发光二极管32的第一边和第二边相对设置。所述微型发光二极管32的形状为等腰梯形。所述微型发光二极管32的第一边位于等腰梯形的长边。所述微型发光二极管32的第二边位于等腰梯形的短边。所述第一电极3021为负极,所述第二电极3022为正极。
在另一种显示面板中,所述微型发光二极管32的第一电极3021为正极,所述微型发光二极管32的第二电极3022为正极。
本申请提供一种微型发光二极管的转移方法和显示面板,在所述微型发光二极管的转移方法中,提供一阵列基板,所述阵列基板上具有安装层,所述安装层设置有若干通孔,所述通孔用于暴露所述阵列基板的像素电极,将微型发光二极管转移到所述安装层对应的通孔里,,所述通孔的形状和所述微型发光二极管的形状为等腰梯形,每一所述微型发光二极管包括发光部和电极部,所述电极部位于所述发光部的一侧,提供一第一载板,将所述阵列基板上异常的微型发光二极管吸附于所述第一载板,所述异常微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管,提供一第二载板,所述第二载板表面具有激光形变胶层,将所述第一载板上的异常的微型发光二极管粘附于所述第二载板的激光形变胶层,采用激光照射设置有所述异常的微型发光二极管的激光形变胶层,逐一翻转所述异常的微型发光二极管,提供一第三载板,将所述第二载板上异常的微型发光二极管转移至所述第三载板,将所述第三载板上异常的微型发光二极管转移至所述安装层的通孔中,在本申请中,所述安装层的通孔的形状和所述微型发光二极管的形状为等腰梯形,所述微型发光二极管可以通过毛刷、震动或流体方式进行组装,从而避免了所述微型发光二极管的正负极错位的情况,在本申请中,采用激光照射设置有所述异常的微型发光二极管的激光形变胶层,逐一翻转所述异常的微型发光二极管,即将倒置的微型发光二极管进行翻转,从而快速的翻转的所述倒置的微型发光二极管,因此,本申请提供的微型发光二极管的转移方法和显示面板提高了微发型光二极管的转移和组装的效率。
以上对本申请实施方式提供了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施方式的说明只是用于帮助理解本申请。同时,对于本领域的技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。

Claims (8)

1.一种微型发光二极管的转移方法,其特征在于,包括:
提供一阵列基板,所述阵列基板上具有安装层,所述安装层设置有若干通孔,所述通孔用于暴露所述阵列基板的像素电极;
将微型发光二极管转移到所述安装层对应的通孔里,每一所述微型发光二极管包括发光部和电极部,所述电极部位于所述发光部的一侧;
提供一第一载板,将所述阵列基板上的异常的微型发光二极管吸附于所述第一载板,所述异常的微型发光二极管为电极部朝向所述通孔的开口部的微型发光二极管;
提供一第二载板,所述第二载板表面具有激光形变胶层,将所述第一载板上的异常的微型发光二极管粘附于所述第二载板的激光形变胶层;
采用激光照射所述激光形变胶层,翻转所述异常的微型发光二极管;
提供一第三载板,将所述第二载板上异常的微型发光二极管转移至所述第三载板;以及,
将所述第三载板上异常的微型发光二极管转移至所述安装层的通孔中。
2.根据权利要求1所述的方法,其特征在于,所述通孔的形状为等腰梯形。
3.根据权利要求1所述的方法,其特征在于,所述微型发光二极管的形状为等腰梯形,所述微型发光二极管包括相对设置的第一边和第二边,所述第一边位于所述等腰梯形的长边,所述第二边位于所述等腰梯形的短边,所述电极部包括第一电极和第二电极,所述第一电极位于所述第一边,所述第二电极位于所述第二边。
4.根据权利要求1所述的方法,其特征在于,所述提供一第一载板,将所述阵列基板上异常的微型发光二极管吸附于所述第一载板,所述异常的微型发光二极管为电极部朝向所述通孔的开口的微型发光二极管的步骤,包括:
提供一第一载板,所述第一载板涂覆导电层,对第一载板施加电压,通过静电力吸附原理将所述异常的微型发光二极管吸附于所述第一载板。
5.根据权利要求1所述的方法,其特征在于,所述提供一第二载板,所述第二载板表面具有激光形变胶层,将所述第一载板上的所述异常的微型发光二极管粘附于所述第二载板的激光形变胶层的步骤,包括:
提供一第二载板,在所述第二载板表面涂覆激光形变胶层,所述激光形变胶层包括丙烯酸树脂类材料、光敏剂和增粘剂。
6.根据权利要求1所述的方法,其特征在于,所述采用激光照射设置有所述激光形变胶层,翻转所述异常的微型发光二极管,包括:
采用激光照射设置有所述异常的微型发光二极管的激光形变胶层,围绕每一所述异常的微型发光二极管的对称轴逐一翻转所述异常的微型发光二极管。
7.根据权利要求1所述的方法,其特征在于,所述第三载板的表面具有胶层,将所述异常的微型发光二极管从所述第二载板转移至所述第三载板的步骤后,所述异常的微型发光二极管粘附于所述胶层。
8.根据权利要求1所述的方法,其特征在于,所述第三载板上有金属层,对所述金属层通电使得所述异常的微型发光二极管从所述第二载板上吸附至所述第三载板。
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