TWI736932B - 吸附裝置、轉移系統及轉移方法 - Google Patents

吸附裝置、轉移系統及轉移方法 Download PDF

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TWI736932B
TWI736932B TW108124580A TW108124580A TWI736932B TW I736932 B TWI736932 B TW I736932B TW 108124580 A TW108124580 A TW 108124580A TW 108124580 A TW108124580 A TW 108124580A TW I736932 B TWI736932 B TW I736932B
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substrate
adsorption device
magnetic film
magnetic
target
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陳柏良
林永富
田仲広久
島田康憲
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大陸商深超光電（深圳）有限公司
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Abstract

本發明提供一種吸附裝置，包括：基板，所述基板具有磁性，可產生磁場；以及磁性膜，所述磁性膜設置於所述基板的一表面上並部分覆蓋所述基板的所述表面，所述磁性膜產生與所述基板產生的磁場的方向相反的磁場，使得所述表面被所述磁性膜覆蓋的位置不表現磁性。本發明提供的吸附裝置，可實現僅於吸附裝置特定位置產生磁力。本發明還提供一種轉移系統及一種轉移方法。

Description

吸附裝置、轉移系統及轉移方法
本發明涉及顯示面板製作領域，尤其涉及一種吸附裝置、應用該吸附裝置的轉移系統及應用該吸附裝置的轉移方法。
於LED顯示裝置尤其是Micro-LED顯示面板的製造過程中，需要將大量的LED移轉到具有電路的基板上進行安裝固定。一種已知的移轉方法是採用靜電吸附的方式，即藉由靜電將待移轉的LED吸附到一移轉機構上，移轉機構將LED傳送到基板的上方之後，移除靜電，使LED脫離吸附而落到基板上。然而，所述靜電吸附的方式存在可能基板上的電路板被靜電擊傷的風險。
本發明一方面提供一種吸附裝置，包括：基板，所述基板具有磁性，可產生磁場；以及磁性膜，所述磁性膜設置於所述基板的一表面上並部分覆蓋所述基板的所述表面，所述磁性膜產生與所述基板產生的磁場的方向相反的磁場，使得所述表面被所述磁性膜覆蓋的位置不表現磁性。
本發明另一方面提供一種轉移系統，包括：吸附裝置，所述吸附裝置為如上述的吸附裝置，所述吸附裝置用於吸附發光二極管；目標基板，所述目標基板上設置有複數異方性導電膠，每一個異方性導電膠用於固定連接一個發光二極。
本發明另一方面提供一種轉移方法，所述轉移方法包括：提供上述的吸附裝置，藉由所述吸附裝置吸附複數發光二極管； 提供一目標基板，所述目標基板上設置有複數異方性導電膠，移動所述吸附裝置或移動所述目標基板，以使所述複數發光二極管與目標基板上的異方性導電膠一一對應接觸；以及對所述異方性導電膠進行熱固化或紫外固化，使所述複數發光二極管脫離所述吸附裝置轉移至目標基板上。
本實施例提供的吸附裝置，包括具有磁性的基板及形成於基板的表面上的磁性膜，磁性膜產生與所述基板產生的磁場的方向相反的磁場。由於磁性膜部分覆蓋基板的表面，則基板的表面被磁性膜覆蓋的位置的磁性被磁性膜產生的磁性抵消，不體現磁性。而僅基板的表面未被磁性膜覆蓋的位置體現磁性，用於吸附目標物體。上述吸附裝置，實現了僅於基板的特定位置(未被磁性膜覆蓋的位置)而非整塊基板產生磁性。
10:吸附裝置
11:基板
111:表面
12:磁性膜
121:逆磁性物質、逆磁性磁石
122:樹脂
123:通孔
20:轉移系統
21:目標基板
211:畫素區域
212:異方性導電膠
22:發光二極管
N、S:磁極
S1、S2、S3:步驟
圖1為本發明實施例提供的吸附裝置的立體結構示意圖。
圖2為圖1中吸附裝置沿Ⅱ-Ⅱ線的剖面結構示意圖。
圖3為本發明實施例提供的轉移系統的結構示意圖。
圖4為圖3中目標基板的平面結構示意圖。
圖5為本發明實施例提供的轉移方法的流程示意圖。
圖6為圖3中轉移系統於一工作狀態下的結構示意圖。
圖7為圖3中轉移系統於另一工作狀態下的結構示意圖。
請參閱圖1，本實施例提供的吸附裝置10，用於藉由磁力吸附目標物體(圖未示)，且本實施例中，吸附裝置10尤其適用於吸附尺寸微小的目標物體(微米級)。
請繼續參閱圖1，吸附裝置10包括基板11及設置於基板11的表面111上的磁性膜12，其中，基板11的表面111用於吸附目標物體。
本實施例中，基板11為具有磁性的材料構成，例如鐵磁體、亞鐵磁體等，基板11具有二磁極：磁極N及磁極S，並產生磁場。例如，基板11靠近磁性膜12的一側為其磁極S，基板11遠離磁性膜12的一側為其磁極N。於一變更實 施例中，基板11本身不為具備磁性的材料構成，而藉由為其施加電流使其產生磁場(電生磁原理)。本發明不對基板11產生磁場的方式作限定。
請參閱圖2，磁性膜12設置於基板11的表面111上，並部分覆蓋基板11的表面111。磁性膜12包括逆磁性物質121，由於基板11產生磁場，根據逆磁性物質121的特性，逆磁性物質121受到磁場作用而被磁化，形成磁極S及磁極N。具體的，逆磁性物質121靠近基板11的一側形成磁極S、逆磁性物質121遠離基板11的一側形成磁極S。亦即，逆磁性物質121被基板11產生的磁場磁化後，逆磁性物質121上靠近基板11的一側與基板11上靠近磁性膜12的一側具有相同磁性的磁極，而逆磁性物質121上遠離基板11的一側與基板11上遠離磁性膜12的一側具有相同磁性的磁極，則逆磁性物質121產生與基板11產生的磁場的方向相反的磁場。磁性膜12包含逆磁性物質121，逆磁性物質121於受到基板11的磁場作用時產生與基板11產生的磁場的方向相反的磁場，則相當於磁性膜12整體產生與基板11產生的磁場的方向相反的磁場。
應當理解，圖2中所示基板11與磁性膜12的磁極分佈方式並不對本發明造成限制，於本發明的一變更實施例中，基板11與磁性膜12的磁極分佈方式可不同，滿足“磁性膜12上靠近基板11的一側與基板11上靠近磁性膜12的一側具有相同磁性的磁極，而磁性膜12上遠離基板11的一側與基板11上遠離磁性膜12的一側具有相同磁性的磁極”即可。
請繼續參閱圖2，本實施例中，上述逆磁性物質121為逆磁性磁石121，磁性膜12包括樹脂122及混合於樹脂122中的多顆逆磁性磁石121。每一逆磁性磁石121被基板11磁化並產生與基板11的磁場的方向相反的磁場。
請同時參閱圖1及圖2，本實施例中，磁性膜12上形成有複數通孔123，基板11的表面111相對各個通孔123裸露。如上所述，磁性膜12產生與基板11的磁場的方向相反的磁場，因此，於基板11的表面111被磁性膜12覆蓋的部分，基板11與磁性膜12產生的磁性相互抵消，不表現出磁性，而僅於基板11的表面111未被磁性膜12覆蓋的部分(相對各個通孔123裸露的位置)體現磁性，此部分的磁性為基板11產生的磁性。需要注意的是，若要實現基板11的表面111被磁性膜12覆蓋的部分的磁性剛好被磁性膜12產生的磁性抵消，則需要經過有限次的試驗，根據基板11產生的磁場力大小以及逆磁性磁石121被磁化後差生的磁性大小，控制磁性膜12中的逆磁性磁石121的尺寸、數量。
本實施例中，複數通孔123呈陣列式排佈，應當理解，於本發明一變更實施例中，複數通孔123採取其他的排佈方式，例如排列為一整行/列。各個通孔123的內徑大小由吸附裝置10要吸附的目標物體的尺寸決定，具體的，基板11的表面111對應每一通孔123的位置用於吸附一目標物體，則各個通孔123的內徑應大於吸附裝置10要吸附的目標物體的尺寸。
進一步的，本實施例中，吸附裝置10的形成方式為：於基板11上形成完全覆蓋表面111的一整層磁性膜12，並對磁性膜12進行蝕刻(例如雷射蝕刻)形成複數通孔123。
本實施例提供的吸附裝置10，包括具有磁性的基板11及形成於基板11的表面111上的磁性膜12，磁性膜12產生與所述基板11產生的磁場的方向相反的磁場。由於磁性膜12部分覆蓋基板11的表面111，則基板11的表面111被磁性膜12覆蓋的位置的磁性被磁性膜12產生的磁性抵消，不體現磁性。而僅基板11的表面111未被磁性膜12覆蓋的位置體現磁性，用於吸附目標物體。上述吸附裝置10，實現了僅於基板11的特定位置(各個通孔對應位置)而非整塊基板11產生磁性；且磁性膜12上形成有複數通孔123，基板11的表面111上對應每一通孔123的位置皆吸附一目標物體，則吸附裝置10可實現單次吸附複數目標物體。
請參閱圖3，本實施例還提供一種轉移系統20，轉移系統20包括吸附裝置10及目標基板21。本實施例中，轉移系統20用於完成顯示面板製作過程中發光二極管22(亦即上述的目標物體)的單次巨量轉移(一次吸附多顆發光二極管22)。
本實施例中，吸附裝置10如上述，此處不再贅述。請同時參閱圖3及圖4，目標基板21為顯示面板的有源基板(或陣列基板)，其上定義有複數畫素區域211。轉移系統20工作過程中，複數畫素區域211對應基板11的表面111上未被磁性膜12覆蓋的部分(對應通孔123的位置)。亦即，基板11的表面111上未被磁性膜12覆蓋的部分吸附發光二極管22至目標基板21上的對個畫素區域211。本實施例中，複數畫素區域211呈陣列式排佈，複數通孔123亦呈陣列式排佈，複數畫素區域211與複數通孔123一一對應。且目標基板21上設置有複數異方性導電膠212，每一畫素區域211中設置有一異方性導電膠212，因此複數異方性導電膠212亦呈陣列式排佈。本實施例中，發光二極管22為如迷你發光二極管 (mini Light Emit Diode,mini LED)或微型發光二極管(Micro Light Emit Diode,Micro LED)等。
請參閱圖5，本實施例還提供一種轉移方法，應用於上述的轉移系統20中，轉移方法包括：步驟S1，提供上述的吸附裝置，藉由所述吸附裝置吸附複數發光二極管；步驟S2，提供一目標基板，所述目標基板上設置有複數異方性導電膠，移動所述吸附裝置或移動所述目標基板，以使所述複數發光二極管與目標基板上的異方性導電膠一一對應接觸；步驟S3，對所述異方性導電膠進行熱固化或紫外固化，使所述複數發光二極管脫離所述吸附裝置轉移至目標基板上。
請一併參閱圖3及圖5，步驟S1中，將基板11設置有磁性膜12的表面111正對發光二極管22，發光二極管22由具有磁性的材料製成或其包含磁性粒子，使得發光二極管22具有與各個基板11表面111相對各個通孔123裸露的位置相反的磁性，則發光二極管22受到指向吸附裝置10方向的磁力，被基板11吸附住。基板11上有複數通孔123，基板11的表面111對應每一通孔123的位置吸附一顆發光二極管22，則吸附裝置10單次可吸附複數發光二極管22，於顯示面板製程中，吸附裝置10單次可吸附的發光二極管22數量可達到上萬顆。
請一併參閱圖5及圖6，步驟S2中，藉由移動吸附裝置10至目標基板21或移動目標基板21至吸附裝置10，使得吸附裝置10所吸附的各個發光二極管22與目標基板21上的異方性導電膠212一一對應接觸。
請一併參閱圖5及圖7，步驟S3中，再對異方性導電膠212進行熱固化或UV固化，使得各個發光二極管22一一對應被黏附於異方性導電膠212上。發光二極管22與異方性導電膠212之間的黏附力大於吸附裝置10對發光二極管22的吸附力，移動吸附裝置10，發光二極管22即可從吸附裝置10脫離，而被固定於目標基板21。
如上述的過程，即可實現單次吸附複數發光二極管22並將其轉移至目標基板21，尤其是於發光二極管22(mini LED：次毫米級發光二極管，尺寸約為100μm~200μm以上；Micro LED：尺寸為100μm以下)的尺寸較小的情況下，上述的轉移系統20有利於提高顯示面板的製作效率。
本技術領域之普通技術人員應當認識到，以上之實施方式僅是用來說明本發明，而並非用作為對本發明之限定，只要於本發明之實質精神範圍之內，對以上實施例所作之適當改變及變化均落於本發明要求保護之範圍之內。
10:吸附裝置
11:基板
111:表面
12:磁性膜
121:逆磁性物質、逆磁性磁石
122:樹脂
123:通孔
N、S:磁極

Claims (10)

  1. 一種吸附裝置，其改良在於，包括：基板，所述基板具有磁性，可產生磁場；以及磁性膜，所述磁性膜設置於所述基板的一表面上並部分覆蓋所述基板的所述表面，所述磁性膜產生與所述基板產生的磁場的方向相反的磁場，使得所述表面被所述磁性膜覆蓋的位置不表現磁性。
  2. 如請求項1所述的吸附裝置，其中，所述磁性膜包括逆磁性物質，所述逆磁性物質被所述基板磁化並產生與所述基板的磁場的方向相反的磁場。
  3. 如請求項2所述的吸附裝置，其中，所述逆磁性物質為逆磁性磁石；所述磁性膜包括樹脂及混合於所述樹脂中的多顆所述逆磁性磁石，所述樹脂黏附於所述基板的所述表面。
  4. 如請求項1所述的吸附裝置，其中，所述磁性膜上形成有間隔設置的複數通孔以使所述基板的所述表面相對露出，所述表面相對各個所述通孔露出的位置具有磁性以吸附目標物體。
  5. 如請求項4所述的吸附裝置，其中，所述目標物體為發光二極管。
  6. 如請求項1所述的吸附裝置，其中，所述基板為具有磁性的材料構成或所述基板通電流以產生磁性。
  7. 一種轉移系統，其改良在於，包括：吸附裝置，所述吸附裝置為如請求項1~6任一項所述的吸附裝置，所述吸附裝置用於吸附發光二極管；以及目標基板，所述目標基板上設置有複數異方性導電膠，每一個異方性導電膠用於固定連接一個發光二極管。
  8. 如請求項7所述的轉移系統，其中，所述目標基板為顯示面板的有源基板，所述目標基板定義有複數畫素區域，各個所述畫素區域的位置與所述基板的所述表面上未被所述磁性膜覆蓋的位置對應。
  9. 如請求項8所述的轉移系統，其中： 所述吸附裝置為如請求項4所述的吸附裝置，所述複數畫素區域與所述複數通孔一一對應。
  10. 一種轉移方法，其改良在於，所述轉移方法包括：提供請求項1~6任一項所述的吸附裝置，藉由所述吸附裝置吸附複數發光二極管；提供一目標基板，所述目標基板上設置有複數異方性導電膠，移動所述吸附裝置或移動所述目標基板，以使所述複數發光二極管與目標基板上的異方性導電膠一一對應接觸；以及對所述異方性導電膠進行熱固化或紫外固化，使所述複數發光二極管脫離所述吸附裝置轉移至目標基板上。
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