CN110379759A - 吸附装置、转移系统及转移方法 - Google Patents

吸附装置、转移系统及转移方法 Download PDF

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CN110379759A
CN110379759A CN201910604688.7A CN201910604688A CN110379759A CN 110379759 A CN110379759 A CN 110379759A CN 201910604688 A CN201910604688 A CN 201910604688A CN 110379759 A CN110379759 A CN 110379759A
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substrate
adsorbent equipment
magnetic
base plate
magnetic film
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CN110379759B (zh
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陈柏良
林永富
田仲広久
岛田康宪
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Century Technology Shenzhen Corp Ltd
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Abstract

本发明提供一种吸附装置，包括：基板，所述基板具有磁性，可产生磁场；以及磁性膜，所述磁性膜设置于所述基板的一表面上并部分覆盖所述基板的所述表面，所述磁性膜产生与所述基板产生的磁场的方向相反的磁场，使得所述表面被所述磁性膜覆盖的位置不表现磁性。本发明提供的吸附装置，可实现仅在吸附装置特定位置产生磁力。本发明还提供一种转移系统及一种转移方法。

Description

吸附装置、转移系统及转移方法
技术领域
本发明涉及显示面板制作领域，尤其涉及一种吸附装置、应用该吸附装置的转移系统及应用该吸附装置的转移方法。
背景技术
在LED显示装置尤其是Micro-LED显示面板的制造过程中，需要将大量的LED移转到具有电路的基板上进行安装固定。一种已知的移转方法是采用静电吸附的方式，即通过静电将待移转的LED吸附到一移转机构上，移转机构将LED传送到基板的上方之后，移除静电，使LED脱离吸附而落到基板上。然而，所述静电吸附的方式存在可能基板上的电路板被静电击伤的风险。
发明内容
本发明一方面提供一种吸附装置，包括：
基板，所述基板具有磁性，可产生磁场；以及
磁性膜，所述磁性膜设置于所述基板的一表面上并部分覆盖所述基板的所述表面，所述磁性膜产生与所述基板产生的磁场的方向相反的磁场，使得所述表面被所述磁性膜覆盖的位置不表现磁性。
本发明另一方面提供一种转移系统，包括：
吸附装置，所述吸附装置为如上述的吸附装置，所述吸附装置用于吸附发光二极管；
目标基板，所述目标基板上设置有多个异方性导电胶，每一个异方性导电胶用于固定连接一个发光二极。
本发明另一方面提供一种转移方法，所述转移方法包括：
提供上述的吸附装置，通过所述吸附装置吸附多个发光二极管；
提供一目标基板，所述目标基板上设置有多个异方性导电胶，移动所述吸附装置或移动所述目标基板，以使所述多个发光二极管与目标基板上的异方性导电胶一一对应接触；
对所述异方性导电胶进行热固化或紫外固化，使所述多个发光二极管脱离所述吸附装置转移至目标基板上。
本实施例提供的吸附装置，包括具有磁性的基板及形成于基板的表面上的磁性膜，磁性膜产生与所述基板产生的磁场的方向相反的磁场。由于磁性膜部分覆盖基板的表面，则基板的表面被磁性膜覆盖的位置的磁性被磁性膜产生的磁性抵消，不体现磁性。而仅基板的表面未被磁性膜覆盖的位置体现磁性，用于吸附目标物体。上述吸附装置，实现了仅在基板的特定位置(未被磁性膜覆盖的位置)而非整块基板产生磁性。
附图说明
图1为本发明实施例提供的吸附装置的立体结构示意图。
图2为图1中吸附装置沿Ⅱ-Ⅱ线的剖面结构示意图。
图3为本发明实施例提供的转移系统的结构示意图。
图4为图3中目标基板的平面结构示意图。
图5为本发明实施例提供的转移方法的流程示意图。
图6为图3中转移系统在一工作状态下的结构示意图。
图7为图3中转移系统在另一工作状态下的结构示意图。
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请参阅图1，本实施例提供的吸附装置10，用于通过磁力吸附目标物体(图未示)，且本实施例中，吸附装置10尤其适用于吸附尺寸微小的目标物体(微米级)。
请继续参阅图1，吸附装置10包括基板11及设置于基板11的表面111上的磁性膜12，其中，基板11的表面111用于吸附目标物体。
本实施例中，基板11为具有磁性的材料构成，例如铁磁体、亚铁磁体等，基板11具有两个磁极：磁极N和磁极S，并产生磁场。例如，基板11靠近磁性膜12的一侧为其磁极S，基板11远离磁性膜12的一侧为其磁极N。于一变更实施例中，基板11本身不为具备磁性的材料构成，而通过为其施加电流使其产生磁场(电生磁原理)。本发明不对基板11产生磁场的方式作限定。
请参阅图2，磁性膜12设置于基板11的表面111上，并部分覆盖基板11的表面111。磁性膜12包括逆磁性物质121，由于基板11产生磁场，根据逆磁性物质121的特性，逆磁性物质121受到磁场作用而被磁化，形成磁极S和磁极N。具体的，逆磁性物质121靠近基板11的一侧形成磁极S、逆磁性物质121远离基板11的一侧形成磁极S。也即，逆磁性物质121被基板11产生的磁场磁化后，逆磁性物质121上靠近基板11的一侧与基板11上靠近磁性膜12的一侧具有相同磁性的磁极，而逆磁性物质121上远离基板11的一侧与基板11上远离磁性膜12的一侧具有相同磁性的磁极，则逆磁性物质121产生与基板11产生的磁场的方向相反的磁场。磁性膜12包含逆磁性物质121，逆磁性物质121在受到基板11的磁场作用时产生与基板11产生的磁场的方向相反的磁场，则相当于磁性膜12整体产生与基板11产生的磁场的方向相反的磁场。
应当理解，图2中所示基板11与磁性膜12的磁极分布方式并不对本发明造成限制，在本发明的一变更实施例中，基板11与磁性膜12的磁极分布方式可不同，满足“磁性膜12上靠近基板11的一侧与基板11上靠近磁性膜12的一侧具有相同磁性的磁极，而磁性膜12上远离基板11的一侧与基板11上远离磁性膜12的一侧具有相同磁性的磁极”即可。
请继续参阅图2，本实施例中，上述逆磁性物质121为逆磁性磁石121，磁性膜12包括树脂122及混合于树脂122中的多颗逆磁性磁石121。每一逆磁性磁石121被基板11磁化并产生与基板11的磁场的方向相反的磁场。
请同时参阅图1和图2，本实施例中，磁性膜12上形成有多个通孔123，基板11的表面111相对各个通孔123裸露。如上所述，磁性膜12产生与基板11的磁场的方向相反的磁场，因此，在基板11的表面111被磁性膜12覆盖的部分，基板11与磁性膜12产生的磁性相互抵消，不表现出磁性，而仅在基板11的表面111未被磁性膜12覆盖的部分(相对各个通孔123裸露的位置)体现磁性，此部分的磁性为基板11产生的磁性。需要注意的是，若要实现基板11的表面111被磁性膜12覆盖的部分的磁性刚好被磁性膜12产生的磁性抵消，则需要经过有限次的试验，根据基板11产生的磁场力大小以及逆磁性磁石121被磁化后差生的磁性大小，控制磁性膜12中的逆磁性磁石121的尺寸、数量。
本实施例中，多个通孔123呈阵列式排布，应当理解，于本发明一变更实施例中，多个通孔123采取其他的排布方式，例如排列为一整行/列。各个通孔123的内径大小由吸附装置10要吸附的目标物体的尺寸决定，具体的，基板11的表面111对应每一通孔123的位置用于吸附一目标物体，则各个通孔123的内径应大于吸附装置10要吸附的目标物体的尺寸。
进一步的，本实施例中，吸附装置10的形成方式为：在基板11上形成完全覆盖表面111的一整层磁性膜12，并对磁性膜12进行蚀刻(例如激光蚀刻)形成多个通孔123。
本实施例提供的吸附装置10，包括具有磁性的基板11及形成于基板11的表面111上的磁性膜12，磁性膜12产生与所述基板11产生的磁场的方向相反的磁场。由于磁性膜12部分覆盖基板11的表面111，则基板11的表面111被磁性膜12覆盖的位置的磁性被磁性膜12产生的磁性抵消，不体现磁性。而仅基板11的表面111未被磁性膜12覆盖的位置体现磁性，用于吸附目标物体。上述吸附装置10，实现了仅在基板11的特定位置(各个通孔对应位置)而非整块基板11产生磁性；且磁性膜12上形成有多个通孔123，基板11的表面111上对应每一通孔123的位置皆吸附一目标物体，则吸附装置10可实现单次吸附多个目标物体。
请参阅图3，本实施例还提供一种转移系统20，转移系统20包括吸附装置10及目标基板21。本实施例中，转移系统20用于完成显示面板制作过程中发光二极管22(也即上述的目标物体)的单次巨量转移(一次吸附多颗发光二极管22)。
本实施例中，吸附装置10如上述，此处不再赘述。请同时参阅图3和图4，目标基板21为显示面板的有源基板(或阵列基板)，其上定义有多个像素区域211。转移系统20工作过程中，多个像素区域211对应基板11的表面111上未被磁性膜12覆盖的部分(对应通孔123的位置)。也即，基板11的表面111上未被磁性膜12覆盖的部分吸附发光二极管22至目标基板21上的对个像素区域211。本实施例中，多个像素区域211呈阵列式排布，多个通孔123也呈阵列式排布，多个像素区域211与多个通孔123一一对应。且目标基板21上设置有多个异方性导电胶212，每一像素区域211中设置有一异方性导电胶212，因此多个异方性导电胶212也呈阵列式排布。本实施例中，发光二极管22为如迷你发光二极管(mini Light EmitDiode,mini LED)或微型发光二极管(Micro Light Emit Diode,Micro LED)等。
请参阅图5，本实施例还提供一种转移方法，应用于上述的转移系统20中，转移方法包括：
步骤S1，提供上述的吸附装置，通过所述吸附装置吸附多个发光二极管；
步骤S2，提供一目标基板，所述目标基板上设置有多个异方性导电胶，移动所述吸附装置或移动所述目标基板，以使所述多个发光二极管与目标基板上的异方性导电胶一一对应接触；
步骤S3，对所述异方性导电胶进行热固化或紫外固化，使所述多个发光二极管脱离所述吸附装置转移至目标基板上。
请一并参阅图3及图5，步骤S1中，将基板11设置有磁性膜12的表面111正对发光二极管22，发光二极管22由具有磁性的材料制成或其包含磁性粒子，使得发光二极管22具有与各个基板11表面111相对各个通孔123裸露的位置相反的磁性，则发光二极管22受到指向吸附装置10方向的磁力，被基板11吸附住。基板11上有多个通孔123，基板11的表面111对应每一通孔123的位置吸附一颗发光二极管22，则吸附装置10单次可吸附多个发光二极管22，在显示面板制程中，吸附装置10单次可吸附的发光二极管22数量可达到上万颗。
请一并参阅图5及图6，步骤S2中，通过移动吸附装置10至目标基板21或移动目标基板21至吸附装置10，使得吸附装置10所吸附的各个发光二极管22与目标基板21上的异方性导电胶212一一对应接触。
请一并参阅图5及图7，步骤S3中，再对异方性导电胶212进行热固化或UV固化，使得各个发光二极管22一一对应被粘附于异方性导电胶212上。发光二极管22与异方性导电胶212之间的粘附力大于吸附装置10对发光二极管22的吸附力，移动吸附装置10，发光二极管22即可从吸附装置10脱离，而被固定于目标基板21。
如上述的过程，即可实现单次吸附多个发光二极管22并将其转移至目标基板21，尤其是在发光二极管22(mini LED：次毫米级发光二极管，尺寸约为100μm～200μm以上；Micro LED：尺寸为100μm以下)的尺寸较小的情况下，上述的转移系统20有利于提高显示面板的制作效率。
本技术领域的普通技术人员应当认识到，以上的实施方式仅是用来说明本发明，而并非用作为对本发明的限定，只要在本发明的实质精神范围之内，对以上实施例所作的适当改变和变化都落在本发明要求保护的范围之内。

Claims (10)

1.一种吸附装置，其特征在于，包括：
基板，所述基板具有磁性，可产生磁场；以及
磁性膜，所述磁性膜设置于所述基板的一表面上并部分覆盖所述基板的所述表面，所述磁性膜产生与所述基板产生的磁场的方向相反的磁场，使得所述表面被所述磁性膜覆盖的位置不表现磁性。
2.如权利要求1所述的吸附装置，其特征在于，所述磁性膜包括逆磁性物质，所述逆磁性物质被所述基板磁化并产生与所述基板的磁场的方向相反的磁场。
3.如权利要求2所述的吸附装置，其特征在于，所述逆磁性物质为逆磁性磁石；
所述磁性膜包括树脂及混合于所述树脂中的多颗所述逆磁性磁石，所述树脂粘附于所述基板的所述表面。
4.如权利要求1所述的吸附装置，其特征在于，所述磁性膜上形成有间隔设置的多个通孔以使所述基板的所述表面相对露出，所述表面相对各个所述通孔露出的位置具有磁性以吸附目标物体。
5.如权利要求4所述的吸附装置，其特征在于，所述目标物体为发光二极管。
6.如权利要求1所述的吸附装置，其特征在于，所述基板为具有磁性的材料构成或所述基板通电流以产生磁性。
7.一种转移系统，其特征在于，包括：
吸附装置，所述吸附装置为如权利要求1～6任一项所述的吸附装置，所述吸附装置用于吸附发光二极管；
目标基板，所述目标基板上设置有多个异方性导电胶，每一个异方性导电胶用于固定连接一个发光二极管。
8.如权利要求7所述的转移系统，其特征在于，所述目标基板为显示面板的有源基板，所述目标基板定义有多个像素区域，各个所述像素区域的位置与所述基板的所述表面上未被所述磁性膜覆盖的位置对应。
9.如权利要求8所述的转移系统，其特征在于：
所述多个像素区域与所述多个通孔一一对应。
10.一种转移方法，其特征在于，所述转移方法包括：
提供权利要求1～6任一项所述的吸附装置，通过所述吸附装置吸附多个发光二极管；
提供一目标基板，所述目标基板上设置有多个异方性导电胶，移动所述吸附装置或移动所述目标基板，以使所述多个发光二极管与目标基板上的异方性导电胶一一对应接触；
对所述异方性导电胶进行热固化或紫外固化，使所述多个发光二极管脱离所述吸附装置转移至目标基板上。
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