CN110379758A - 吸附装置、转移系统及转移方法 - Google Patents
吸附装置、转移系统及转移方法 Download PDFInfo
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Abstract
本发明提供一种吸附装置,包括:磁性板,所述磁性板的一表面上定义有一第一区域及多个间隔设置的第二区域,所述第一区域及各个所述第二区域皆相互独立且不重叠,所述第一区域与所述多个第二区域对应所述磁性板上相反的磁极;以及限位层,所述限位层设置于所述磁性板的所述表面,所述限位层至少部分覆盖所述第一区域,所述多个第二区域皆相对所述限位层裸露;所述多个第二区域用于分别以磁性吸附目标物体。本发明还提供一种转移系统及转移方法。
Description
技术领域
本发明涉及显示装置制作领域,尤其涉及一种吸附装置、应用该吸附装置的转移系统及应用该吸附装置的转移方法。
背景技术
在LED显示装置尤其是Micro-LED显示面板的制造过程中,需要将大量的LED移转到具有电路的基板上进行安装固定。一种已知的移转方法是采用静电吸附的方式,即通过静电将待移转的LED吸附到一移转机构上,移转机构将LED传送到基板的上方之后,移除静电,使LED脱离吸附而落到基板上。然而,所述静电吸附的方式存在可能基板上的电路板被静电击伤的风险。
发明内容
本发明一方面提供一种吸附装置,包括:
磁性板,所述磁性板的一表面上定义有一第一区域及多个间隔设置的第二区域,所述第一区域及各个所述第二区域皆相互独立且不重叠,所述第一区域与所述多个第二区域对应所述磁性板上相反的磁极;以及
限位层,所述限位层设置于所述磁性板的所述表面,所述限位层至少部分覆盖所述第一区域,所述多个第二区域皆相对所述限位层裸露;
所述多个第二区域用于分别以磁性吸附目标物体。
本发明另一方面提供一种转移系统,包括:
吸附装置,所述吸附装置为如上述的吸附装置,所述吸附装置用于吸附所述多个发光二极管;
目标基板,所述目标基板上设置有多个异方性导电胶,每一个所述异方性导电胶用于固定连接一个所述发光二极管。
本发明另一方面提供一种转移方法,应用于如上述的转移系统中;所述转移方法包括:
提供上述的吸附装置,通过所述吸附装置吸附多个发光二极管;
提供一目标基板,所述目标基板上设置有多个异方性导电胶,移动所述吸附装置或移动目标基板,以使所述多个发光二极管与目标基板上的异方性导电胶一一对准接触;
对所述异方性导电胶进行热固化或紫外固化,使所述多个发光二极管脱离所述吸附装置转移至目标基板上。
本实施例提供的吸附装置,包括磁性板及设置于磁性板一表面上的限位层。磁性板的表面上定义有一第一区域及多个第二区域,第一区域与多个第二区域磁极相反,限位层部分覆盖第一区域,且多个第二区域相对限位层裸露,各个第二区域通过磁力吸附目标物体,而第一区域不吸附目标物体,因此本实施例提供的吸附装置,实现了仅在特定位置(第二区域)吸附目标物体;由于磁性板表面上定义有多个第二区域,因此吸附装置单次吸附操作可同时吸附多个目标物体,有利于提高吸附效率。
附图说明
图1为本发明实施例提供的吸附装置的立体结构示意图。
图2为图1中吸附装置的拆分结构示意图。
图3为本发明实施例提供的转移系统的结构示意图。
图4为图3中转移系统工作状态下的结构示意图。
图5为本发明实施例提供的转移方法的流程示意图。
图6为图3中转移系统一工作状态下的结构示意图。
图7为图3中转移系统另一工作状态下的结构示意图。
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
实施例一
本实施例提供的吸附装置,用于通过磁力吸附目标物体(图未示),且本实施例中,吸附装置尤其适用于吸附尺寸微小的目标物体(微米级)。
请参阅图1,吸附装置10,包括磁性板11及设置于磁性板11的一表面111上的限位层12。其中,限位层12部分覆盖表面111,磁性板11具有磁性,可产生磁力,其表面111上未被限位层12覆盖的部分用于以磁力吸附目标物体(图未示)。
请参阅图2,磁性板11的表面111上定义有一第一区域112及多个间隔设置的第二区域113,且第一区域112与各个第二区域皆相互独立且不重叠,具体的,第一区域112围绕每一第二区域113。第一区域112对应磁性板11的一磁极(例如磁极S),各个第二区域113对应磁性板11的另一磁极(例如磁极N)。本实施例中,第一区域112对应磁性板11的磁极S,各个第二区域113对应磁性板11的磁极N;应当理解,于其他实施例中,可为第一区域112对应磁性板11的磁极N,各个第二区域113对应磁性板11的磁极S,本发明对第一区域112与各个第二区域113对应的磁性板11的磁极不作限定。
请继续参阅图2,第一区域112与多个第二区域113相互拼接从而构成磁性板11的一完整表面111,本实施例中,各个第二区域113的大小形状相同,第一区域112与多个第二区域113相互拼接构成的表面111为矩形,各个第二区域113相互分离,且呈矩阵式排布。应当理解,本实施例中,图2中所示第一区域112与第二区域113的形状、大小、排布方式皆不对本发明进行限制。
请继续参阅图2,限位层12为本身不具磁性且不易被外部磁场磁化的材料,其部分覆盖第一区域112,各个第二区域113相对限位层12裸露。本实施例中,限位层12上开设有多个通孔121,多个通孔121与多个第二区域113一一对应,也即,每一第二区域113相对一通孔121裸露。由于各个第二区域呈矩阵式排布,因此与多个第二区域113一一对应的多个通孔也呈阵列式排列。磁性板11的表面111上,各个第二区域113用于吸附目标物体(图未示),具体的,每一第二区域113可独立吸附一目标物体。各个第二区域113吸附目标物体时,目标物体位于通孔121内。因此,限位层12通过开设通孔121的方式,使得目标物体可准确地被吸附至磁性板11上的特定位置。
各个第二区域113以磁力吸附目标物体,目标物体应具有磁性,且目标物体上与各个第二区域113所对应的磁性板11的磁极相反的磁极所在一侧被磁性板11吸附。而各个第二区域113与第一区域112所对应的磁性板11上的磁极相反,则目标物体被磁性板11吸附的磁极与第一区域112所对应的磁性板11的磁极相同,目标物体被磁性板11吸附的磁极所在一侧与第一区域112相互排斥。本实施例中,每一通孔121对应磁性板11的表面111上一第二区域113及位于该第二区域113边缘的部分第一区域112,第二区域113吸附目标物体,第一区域112排斥目标物体,因此应当理解,通孔121应对应面积尽量小的第一区域112,以保证吸附力满足可吸附目标物体。于本发明一变更实施例中,限位层12全部覆盖第一区域112,每一通孔121仅对应一第二区域113。
本实施例提供的吸附装置10,包括磁性板11及设置于磁性板11一表面111上的限位层12。磁性板11的表面111上定义有一第一区域112及多个第二区域113,第一区域112与多个第二区域113对应磁性板11的相反的磁极,限位层12部分覆盖第一区域112,且多个第二区域113相对限位层12裸露,各个第二区域113通过磁力吸附目标物体,而第一区域不吸附目标物体,因此本实施例提供的吸附装置10,实现了仅在特定位置(第二区域113)吸附目标物体;由于磁性板11表面111上定义有多个第二区域113,因此吸附装置10单次吸附操作可同时吸附多个目标物体,有利于提高吸附效率。
请参阅图3,本实施例还提供一种转移系统20,转移系统20包括吸附装置10及目标基板21。本实施例中,转移系统20用于完成显示面板制作过程中发光二极管22(也即上述的目标物体)的单次巨量转移(一次吸附多个发光二极管22)。
本实施例中,吸附装置10如上述,此处不再赘述。
请同时参阅图3和图4,目标基板21为显示面板的有源基板(或阵列基板),其上定义有多个像素区域211。转移系统20工作过程中,多个像素区域211对应磁性板11的表面111上未被限位层12覆盖的部分(对应通孔121/第二区域113的位置),磁性板11的表面111上未被限位层12覆盖的部分吸附发光二极管22至目标基板21上的多个像素区域211。具体的,多个像素区域211呈阵列式排布,多个第二区域113也呈阵列式排布,多个像素区域211与多个第二区域113一一对应,磁性板11的表面111上每一第二区域113吸附一个发光二极管22至目标基板21上的一像素区域211。本实施例中,目标基板21上设置有多个异方性导电胶212,每一像素区域211中设置有一异方性导电胶212,因此多个异方性导电胶212也呈阵列式排布。
本实施例中,发光二极管22为如迷你发光二极管(mini Light Emit Diode,miniLED)或微型发光二极管(Micro Light Emit Diode,Micro LED)等。每一发光二极管22的表面包覆有一磁性层221,磁性层221部分包覆发光二极管22。具体的,磁性层221为因瓦合金,其被磁化后具有磁性,包覆于发光二极管22表面,使得发光二极管22可被吸附装置吸附。
请参阅图5,本实施例还提供一种转移方法,应用于上述的转移系统20中,转移方法包括:
步骤S1,提供上述的吸附装置,通过所述吸附装置吸附多个发光二极管;
步骤S2,提供一目标基板,所述目标基板上设置有多个异方性导电胶,移动所述吸附装置或移动目标基板,以使所述多个发光二极管与目标基板上的异方性导电胶一一对准接触;
步骤S3,对所述异方性导电胶进行热固化或紫外固化,使所述多个发光二极管脱离所述吸附装置转移至目标基板上;
步骤S4,在将所述多个发光二极管脱离所述吸附装置转移至目标基板上之后,将各个所述发光二极管上的所述磁性层去除。
请一并参阅图3及图5,步骤S1中,提供如上述的一吸附装置10,将磁性板11设置有限位层12的表面111正对发光二极管22。限位层12上设置有多个通孔121,磁性板11的表面111对应每一通孔121的位置吸附一个发光二极管22,也即每一第二区域113吸附一个发光二极管22,则吸附装置10单次可吸附多个发光二极管22,在显示面板制程中,吸附装置10单次可吸附的发光二极管22数量可达到上万个。
请一并参阅图5及图6,步骤S2中,通过移动吸附装置10至与目标基板21相对或移动目标基板21至与吸附装置10相对,使得吸附装置10所吸附的各个发光二极管22与目标基板21上的异方性导电胶212一一对应接触。具体的,每一发光二极管22上包覆磁性层221的一侧被一第二区域113吸附,而相对磁性层221裸露的一侧与一异方性导电胶212接触。
请一并参阅图5及图7,步骤S3中,保持每一发光二极管22与一异方性导电胶212接触,并对异方性导电胶212进行热固化或UV固化,使得各个发光二极管22一一对应被粘附于异方性导电胶212上。发光二极管22与异方性导电胶212之间的粘附力大于吸附装置10对发光二极管22的吸附力,移动吸附装置10或移动目标基板21,发光二极管22即可从吸附装置10脱离,而被固定于目标基板21上。
步骤S4中,将各个发光二极管22上的磁性层221去除,以有利于减小发光二极管22发出的光线的损耗。
如上述的过程,即可实现单次吸附多个发光二极管22并将其转移至目标基板21,尤其是在发光二极管22(mini LED:次毫米级发光二极管,尺寸约为100μm~200μm以上;Micro LED:尺寸为100μm以下)的尺寸较小的情况下,上述的转移系统20有利于提高显示面板的制作效率。
本技术领域的普通技术人员应当认识到,以上的实施方式仅是用来说明本发明,而并非用作为对本发明的限定,只要在本发明的实质精神范围之内,对以上实施例所作的适当改变和变化都落在本发明要求保护的范围之内。
Claims (10)
1.一种吸附装置,其特征在于,包括:
磁性板,所述磁性板的一表面上定义有一第一区域及多个间隔设置的第二区域,所述第一区域及各个所述第二区域皆相互独立且不重叠,所述第一区域与所述多个第二区域对应所述磁性板上相反的磁极;以及
限位层,所述限位层设置于所述磁性板的所述表面,所述限位层至少部分覆盖所述第一区域,所述多个第二区域皆相对所述限位层裸露;
所述多个第二区域用于分别以磁性吸附目标物体。
2.如权利要求1所述的吸附装置,其特征在于,所述第一区域围绕每一个第二区域,所述第一区域与所述多个第二区域相互拼接形成所述磁性板的所述表面。
3.如权利要求1所述的吸附装置,其特征在于,所述限位层上开设有与所述多个第二区域对应的多个通孔,每一第二区域相对于一通孔裸露;
每一所述第二区域用于吸附一所述目标物体至与所述第二区域对应的所述通孔中。
4.一种转移系统,其特征在于,包括:
吸附装置,所述吸附装置为如权利要求1~3任一项所述的吸附装置,所述吸附装置用于吸附所述多个发光二极管;
目标基板,所述目标基板上设置有多个异方性导电胶,每一个所述异方性导电胶用于固定连接一个所述发光二极管。
5.如权利要求4所述的转移系统,其特征在于,所述目标基板为显示面板的有源基板,所述目标基板定义有多个像素区域,各个所述像素区域的位置与所述基板的所述表面上的未被所述限位层覆盖的位置对应。
6.如权利要求5所述的转移系统,其特征在于;
所述多个像素区域与所述多个第二区域一一对应。
7.一种转移方法,其特征在于,所述转移方法包括:
提供权利要求1~3任一项所述的吸附装置,通过所述吸附装置吸附多个发光二极管;
提供一目标基板,所述目标基板上设置有多个异方性导电胶,移动所述吸附装置或移动目标基板,以使所述多个发光二极管与目标基板上的异方性导电胶一一对准接触;
对所述异方性导电胶进行热固化或紫外固化,使所述多个发光二极管脱离所述吸附装置转移至目标基板上。
8.如权利要求7所述的转移方法,其特征在于,每一发光二极管被一磁性层部分包覆,所述磁性层使得所述发光二极管可被所述第二区域吸附。
9.如权利要求8所述的转移方法,其特征在于,还包括:在将所述多个发光二极管脱离所述吸附装置转移至目标基板上之后,将各个所述发光二极管上的所述磁性层去除。
10.如权利要求8所述的转移方法,其特征在于,所述磁性层为因瓦合金。
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Cited By (4)
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CN111095516A (zh) * | 2019-12-17 | 2020-05-01 | 重庆康佳光电技术研究院有限公司 | 一种巨量转移装置及巨量转移方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110379758B (zh) * | 2019-07-05 | 2021-02-02 | 深超光电(深圳)有限公司 | 吸附装置、转移系统及转移方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020043923A1 (en) * | 2000-08-18 | 2002-04-18 | Takehisa Natori | Image display unit and production method thereof |
JP2007214539A (ja) * | 2006-02-09 | 2007-08-23 | Au Optronics Corp | 基板搬送装置 |
CN104851828A (zh) * | 2014-02-13 | 2015-08-19 | 苹果公司 | 通用处理衬底的载体 |
JP2016003386A (ja) * | 2014-06-19 | 2016-01-12 | 株式会社システム技研 | 成膜ホルダ |
CN105789122A (zh) * | 2014-12-12 | 2016-07-20 | 财团法人工业技术研究院 | 光电元件的转移方法 |
CN109065692A (zh) * | 2018-08-01 | 2018-12-21 | 厦门多彩光电子科技有限公司 | 一种led的封装方法 |
CN109378370A (zh) * | 2018-12-05 | 2019-02-22 | 合肥京东方光电科技有限公司 | 微型led的转移设备、显示基板的制造系统及制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7460224B2 (en) * | 2005-12-19 | 2008-12-02 | Opto Trace Technologies, Inc. | Arrays of nano structures for surface-enhanced Raman scattering |
JP2006127681A (ja) * | 2004-10-29 | 2006-05-18 | Hitachi Ltd | 磁気記録媒体及びその製造方法、磁気記録再生装置 |
US9773750B2 (en) * | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
KR102091756B1 (ko) * | 2015-11-04 | 2020-03-20 | 한화정밀기계 주식회사 | 반도체 기판 진공 흡착 장치 |
CN110379758B (zh) * | 2019-07-05 | 2021-02-02 | 深超光电(深圳)有限公司 | 吸附装置、转移系统及转移方法 |
CN110379759B (zh) * | 2019-07-05 | 2021-02-02 | 深超光电(深圳)有限公司 | 吸附装置、转移系统及转移方法 |
-
2019
- 2019-07-05 CN CN201910604687.2A patent/CN110379758B/zh active Active
- 2019-07-11 TW TW108124579A patent/TWI736931B/zh active
- 2019-08-22 US US16/547,854 patent/US11295971B2/en active Active
-
2022
- 2022-02-21 US US17/676,372 patent/US11676840B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020043923A1 (en) * | 2000-08-18 | 2002-04-18 | Takehisa Natori | Image display unit and production method thereof |
JP2007214539A (ja) * | 2006-02-09 | 2007-08-23 | Au Optronics Corp | 基板搬送装置 |
CN104851828A (zh) * | 2014-02-13 | 2015-08-19 | 苹果公司 | 通用处理衬底的载体 |
JP2016003386A (ja) * | 2014-06-19 | 2016-01-12 | 株式会社システム技研 | 成膜ホルダ |
CN105789122A (zh) * | 2014-12-12 | 2016-07-20 | 财团法人工业技术研究院 | 光电元件的转移方法 |
CN109065692A (zh) * | 2018-08-01 | 2018-12-21 | 厦门多彩光电子科技有限公司 | 一种led的封装方法 |
CN109378370A (zh) * | 2018-12-05 | 2019-02-22 | 合肥京东方光电科技有限公司 | 微型led的转移设备、显示基板的制造系统及制造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111095516A (zh) * | 2019-12-17 | 2020-05-01 | 重庆康佳光电技术研究院有限公司 | 一种巨量转移装置及巨量转移方法 |
CN111095516B (zh) * | 2019-12-17 | 2021-08-24 | 重庆康佳光电技术研究院有限公司 | 一种巨量转移装置及巨量转移方法 |
US11784159B2 (en) | 2019-12-17 | 2023-10-10 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Mass transfer device and mass transfer method |
TWI754246B (zh) * | 2020-03-10 | 2022-02-01 | 大陸商深超光電(深圳)有限公司 | 轉移裝置、轉移裝置的製備方法、轉移方法及顯示裝置 |
CN112635400A (zh) * | 2021-01-07 | 2021-04-09 | Tcl华星光电技术有限公司 | 一种磁吸式MicroLED巨量转移结构及方法 |
CN112635400B (zh) * | 2021-01-07 | 2022-10-04 | Tcl华星光电技术有限公司 | 一种磁吸式MicroLED巨量转移结构及方法 |
CN114112574A (zh) * | 2021-11-15 | 2022-03-01 | 哈尔滨工业大学(威海) | 用于介观尺度弯曲试样力学性能测试的磁控溅射成形装置 |
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