TWI736931B - 吸附裝置、轉移系統及轉移方法 - Google Patents

吸附裝置、轉移系統及轉移方法 Download PDF

Info

Publication number
TWI736931B
TWI736931B TW108124579A TW108124579A TWI736931B TW I736931 B TWI736931 B TW I736931B TW 108124579 A TW108124579 A TW 108124579A TW 108124579 A TW108124579 A TW 108124579A TW I736931 B TWI736931 B TW I736931B
Authority
TW
Taiwan
Prior art keywords
adsorption device
area
light
regions
target substrate
Prior art date
Application number
TW108124579A
Other languages
English (en)
Other versions
TW202102423A (zh
Inventor
陳柏良
林永富
田仲広久
島田康憲
Original Assignee
大陸商深超光電（深圳）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商深超光電（深圳）有限公司 filed Critical 大陸商深超光電（深圳）有限公司
Publication of TW202102423A publication Critical patent/TW202102423A/zh
Application granted granted Critical
Publication of TWI736931B publication Critical patent/TWI736931B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
    • B65G47/74—Feeding, transfer, or discharging devices of particular kinds or types
    • B65G47/90—Devices for picking-up and depositing articles or materials
    • B65G47/92—Devices for picking-up and depositing articles or materials incorporating electrostatic or magnetic grippers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
    • H01L2224/95136—Aligning the plurality of semiconductor or solid-state bodies involving guiding structures, e.g. shape matching, spacers or supporting members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
    • H01L2224/95143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • H01L2224/95144—Magnetic alignment, i.e. using permanent magnetic parts in the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15157—Top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本發明提供一種吸附裝置，包括：磁性板，所述磁性板的一表面上定義有一第一區域及複數間隔設置的第二區域，所述第一區域及各個所述第二區域皆相互獨立且不重疊，所述第一區域與所述複數第二區域對應所述磁性板上相反的磁極；以及限位層，所述限位層設置於所述磁性板的所述表面，所述限位層至少部分覆蓋所述第一區域，所述複數第二區域皆相對所述限位層裸露；所述複數第二區域用於分別以磁性吸附目標物體。本發明還提供一種轉移系統及轉移方法。

Description

吸附裝置、轉移系統及轉移方法
本發明涉及顯示裝置製作領域，尤其涉及一種吸附裝置、應用該吸附裝置的轉移系統及應用該吸附裝置的轉移方法。
於LED顯示裝置尤其是Micro-LED顯示面板的製造過程中，需要將大量的LED移轉到具有電路的基板上進行安裝固定。一種習知的移轉方法是採用靜電吸附的方式，即藉由靜電將待移轉的LED吸附到一移轉機構上，移轉機構將LED傳送到基板的上方之後，移除靜電，使LED脫離吸附而落到基板上。然而，所述靜電吸附的方式存在可能基板上的電路板被靜電擊傷的風險。
本發明一方面提供一種吸附裝置，包括：磁性板，所述磁性板的一表面上定義有一第一區域及複數間隔設置的第二區域，所述第一區域及各個所述第二區域皆相互獨立且不重疊，所述第一區域與所述複數第二區域對應所述磁性板上相反的磁極；以及限位層，所述限位層設置於所述磁性板的所述表面，所述限位層至少部分覆蓋所述第一區域，所述複數第二區域皆相對所述限位層裸露；所述複數第二區域用於分別以磁性吸附目標物體。
本發明另一方面提供一種轉移系統，包括：吸附裝置，所述吸附裝置為如上述的吸附裝置，所述吸附裝置用於吸附所述複數發光二極管；以及目標基板，所述目標基板上設置有複數異方性導電膠，每一個所述異方性導電膠用於固定連接一個所述發光二極管。
本發明另一方面提供一種轉移方法，應用於如上述的轉移系統中；所述轉移方法包括：提供上述的吸附裝置，藉由所述吸附裝置吸附複數發光二極管；提供一目標基板，所述目標基板上設置有複數異方性導電膠，移動所述吸附裝置或移動目標基板，以使所述複數發光二極管與目標基板上的異方性導電膠一一對準接觸；以及對所述異方性導電膠進行熱固化或紫外固化，使所述複數發光二極管脫離所述吸附裝置轉移至目標基板上。
本實施例提供的吸附裝置，包括磁性板及設置於磁性板一表面上的限位層。磁性板的表面上定義有一第一區域及複數第二區域，第一區域與複數第二區域磁極相反，限位層部分覆蓋第一區域，且複數第二區域相對限位層裸露，各個第二區域藉由磁力吸附目標物體，而第一區域不吸附目標物體，故本實施例提供的吸附裝置，實現了僅於特定位置(第二區域)吸附目標物體；由於磁性板表面上定義有複數第二區域，故吸附裝置單次吸附操作可同時吸附複數目標物體，有利於提高吸附效率。
10:吸附裝置
11:磁性板
111:表面
112:第一區域
113:第二區域
12:限位層
121:通孔
20:轉移系統
21:目標基板
211:畫素區域
212:異方性導電膠
22:發光二極管
221:磁性層
S1、S2、S3:步驟
圖1為本發明實施例提供的吸附裝置的立體結構示意圖。
圖2為圖1中吸附裝置的拆分結構示意圖。
圖3為本發明實施例提供的轉移系統的結構示意圖。
圖4為圖3中轉移系統工作狀態下的結構示意圖。
圖5為本發明實施例提供的轉移方法的流程示意圖。
圖6為圖3中轉移系統一工作狀態下的結構示意圖。
圖7為圖3中轉移系統另一工作狀態下的結構示意圖。
本實施例提供的吸附裝置，用於藉由磁力吸附目標物體(圖未示)，且本實施例中，吸附裝置尤其適用於吸附尺寸微小的目標物體(微米級)。
請參閱圖1，吸附裝置10，包括磁性板11及設置於磁性板11的一表面111上的限位層12。其中，限位層12部分覆蓋表面111，磁性板11具有磁性， 可產生磁力，其表面111上未被限位層12覆蓋的部分用於以磁力吸附目標物體(圖未示)。
請參閱圖2，磁性板11的表面111上定義有一第一區域112及複數間隔設置的第二區域113，且第一區域112與各個第二區域皆相互獨立且不重疊，具體的，第一區域112圍繞每一第二區域113。第一區域112對應磁性板11的一磁極(例如磁極S)，各個第二區域113對應磁性板11的另一磁極(例如磁極N)。本實施例中，第一區域112對應磁性板11的磁極S，各個第二區域113對應磁性板11的磁極N；應當理解，於其他實施例中，可為第一區域112對應磁性板11的磁極N，各個第二區域113對應磁性板11的磁極S，本發明對第一區域112與各個第二區域113對應的磁性板11的磁極不作限定。
請繼續參閱圖2，第一區域112與複數第二區域113相互拼接從而構成磁性板11的一完整表面111，本實施例中，各個第二區域113的大小形狀相同，第一區域112與複數第二區域113相互拼接構成的表面111為矩形，各個第二區域113相互分離，且呈矩陣式排佈。應當理解，本實施例中，圖2中所示第一區域112與第二區域113的形狀、大小、排佈方式皆不對本發明進行限制。
請繼續參閱圖2，限位層12為本身不具磁性且不易被外部磁場磁化的材料，其部分覆蓋第一區域112，各個第二區域113相對限位層12裸露。本實施例中，限位層12上開設有複數通孔121，複數通孔121與複數第二區域113一一對應，亦即，每一第二區域113相對一通孔121裸露。由於各個第二區域呈矩陣式排佈，故與複數第二區域113一一對應的複數通孔亦呈陣列式排列。磁性板11的表面111上，各個第二區域113用於吸附目標物體(圖未示)，具體的，每一第二區域113可獨立吸附一目標物體。各個第二區域113吸附目標物體時，目標物體位於通孔121內。故，限位層12藉由開設通孔121的方式，使得目標物體可準確地被吸附至磁性板11上的特定位置。
各個第二區域113以磁力吸附目標物體，目標物體應具有磁性，且目標物體上與各個第二區域113所對應的磁性板11的磁極相反的磁極所於一側被磁性板11吸附。而各個第二區域113與第一區域112所對應的磁性板11上的磁極相反，則目標物體被磁性板11吸附的磁極與第一區域112所對應的磁性板11的磁極相同，目標物體被磁性板11吸附的磁極所在一側與第一區域112相互排斥。本實施例中，每一通孔121對應磁性板11的表面111上一第二區域113及位於該第 二區域113邊緣的部分第一區域112，第二區域113吸附目標物體，第一區域112排斥目標物體，故應當理解，通孔121應對應面積儘量小的第一區域112，以保證吸附力滿足可吸附目標物體。於本發明一變更實施例中，限位層12全部覆蓋第一區域112，每一通孔121僅對應一第二區域113。
本實施例提供的吸附裝置10，包括磁性板11及設置於磁性板11一表面111上的限位層12。磁性板11的表面111上定義有一第一區域112及複數第二區域113，第一區域112與複數第二區域113對應磁性板11的相反的磁極，限位層12部分覆蓋第一區域112，且複數第二區域113相對限位層12裸露，各個第二區域113藉由磁力吸附目標物體，而第一區域不吸附目標物體，故本實施例提供的吸附裝置10，實現了僅於特定位置(第二區域113)吸附目標物體；由於磁性板11表面111上定義有複數第二區域113，故吸附裝置10單次吸附操作可同時吸附複數目標物體，有利於提高吸附效率。
請參閱圖3，本實施例還提供一種轉移系統20，轉移系統20包括吸附裝置10及目標基板21。本實施例中，轉移系統20用於完成顯示面板製作過程中發光二極管22(亦即上述的目標物體)的單次巨量轉移(一次吸附複數發光二極管22)。
本實施例中，吸附裝置10如上述，此處不再贅述。
請同時參閱圖3及圖4，目標基板21為顯示面板的有源基板(或陣列基板)，其上定義有複數畫素區域211。轉移系統20工作過程中，複數畫素區域211對應磁性板11的表面111上未被限位層12覆蓋的部分(對應通孔121/第二區域113的位置)，磁性板11的表面111上未被限位層12覆蓋的部分吸附發光二極管22至目標基板21上的複數畫素區域211。具體的，複數畫素區域211呈陣列式排佈，複數第二區域113亦呈陣列式排佈，複數畫素區域211與複數第二區域113一一對應，磁性板11的表面111上每一第二區域113吸附一個發光二極管22至目標基板21上的一畫素區域211。本實施例中，目標基板21上設置有複數異方性導電膠212，每一畫素區域211中設置有一異方性導電膠212，故複數異方性導電膠212亦呈陣列式排佈。
本實施例中，發光二極管22為如迷你發光二極管(mini Light Emit Diode,mini LED)或微型發光二極管(Micro Light Emit Diode,Micro LED)等。每一發光二極管22的表面包覆有一磁性層221，磁性層221部分包覆發光二極管 22。具體的，磁性層221為因瓦合金，其被磁化後具有磁性，包覆於發光二極管22表面，使得發光二極管22可被吸附裝置吸附。
請參閱圖5，本實施例還提供一種轉移方法，應用於上述的轉移系統20中，轉移方法包括：步驟S1，提供上述的吸附裝置，藉由所述吸附裝置吸附複數發光二極管；步驟S2，提供一目標基板，所述目標基板上設置有複數異方性導電膠，移動所述吸附裝置或移動目標基板，以使所述複數發光二極管與目標基板上的異方性導電膠一一對準接觸；步驟S3，對所述異方性導電膠進行熱固化或紫外固化，使所述複數發光二極管脫離所述吸附裝置轉移至目標基板上；步驟S4，在將所述複數發光二極管脫離所述吸附裝置轉移至目標基板上之後，將各個所述發光二極管上的所述磁性層去除。
請一併參閱圖3及圖5，步驟S1中，提供如上述的一吸附裝置10，將磁性板11設置有限位層12的表面111正對發光二極管22。限位層12上設置有複數通孔121，磁性板11的表面111對應每一通孔121的位置吸附一個發光二極管22，亦即每一第二區域113吸附一個發光二極管22，則吸附裝置10單次可吸附複數發光二極管22，於顯示面板製程中，吸附裝置10單次可吸附的發光二極管22數量可達到上萬個。
請一併參閱圖5及圖6，步驟S2中，藉由移動吸附裝置10至與目標基板21相對或移動目標基板21至與吸附裝置10相對，使得吸附裝置10所吸附的各個發光二極管22與目標基板21上的異方性導電膠212一一對應接觸。具體的，每一發光二極管22上包覆磁性層221的一側被一第二區域113吸附，而相對磁性層221裸露的一側與一異方性導電膠212接觸。
請一併參閱圖5及圖7，步驟S3中，保持每一發光二極管22與一異方性導電膠212接觸，並對異方性導電膠212進行熱固化或UV固化，使得各個發光二極管22一一對應被黏附於異方性導電膠212上。發光二極管22與異方性導電膠212之間的黏附力大於吸附裝置10對發光二極管22的吸附力，移動吸附裝置10或移動目標基板21，發光二極管22即可從吸附裝置10脫離，而被固定於目標基板21上。
步驟S4中，將各個發光二極管22上的磁性層221去除，以有利於減小發光二極管22發出的光線的損耗。
如上述的過程，即可實現單次吸附複數發光二極管22並將其轉移至目標基板21，尤其是於發光二極管22(mini LED：次毫米級發光二極管，尺寸約為100μm~200μm以上；Micro LED：尺寸為100μm以下)的尺寸較小的情況下，上述的轉移系統20有利於提高顯示面板的製作效率。
本技術領域之普通技術人員應當認識到，以上之實施方式僅是用來說明本發明，而並非用作為對本發明之限定，只要於本發明之實質精神範圍之內，對以上實施例所作之適當改變及變化均落於本發明要求保護之範圍之內。
11:磁性板
111:表面
112:第一區域
113:第二區域
12:限位層
121:通孔

Claims (9)

  1. 一種吸附裝置，其改良在於，包括：磁性板，所述磁性板的一表面上定義有一第一區域及複數間隔設置的第二區域，所述第一區域圍繞每一個第二區域，所述第一區域與所述複數第二區域相互拼接形成所述磁性板的所述表面，所述第一區域與所述複數第二區域對應所述磁性板上相反的磁極；以及限位層，所述限位層設置於所述磁性板的所述表面，所述限位層部分覆蓋所述第一區域，所述複數第二區域皆相對所述限位層裸露；所述複數第二區域用於分別以磁性吸附目標物體。
  2. 如請求項1所述的吸附裝置，其中，所述限位層上開設有與所述複數第二區域對應的複數通孔，每一第二區域相對於一通孔裸露；每一所述第二區域用於吸附一所述目標物體至與所述第二區域對應的所述通孔中。
  3. 一種轉移系統，其改良在於，包括：吸附裝置，所述吸附裝置為如請求項1或2任一項所述的吸附裝置，所述吸附裝置用於吸附所述複數發光二極管；以及目標基板，所述目標基板上設置有複數異方性導電膠，每一個所述異方性導電膠用於固定連接一個所述發光二極管。
  4. 如請求項3所述的轉移系統，其中，所述目標基板為顯示面板的有源基板，所述目標基板定義有複數畫素區域，各個所述畫素區域的位置與所述基板的所述表面上的未被所述限位層覆蓋的位置對應。
  5. 如請求項4所述的轉移系統，其中；所述複數畫素區域與所述複數第二區域一一對應。
  6. 一種轉移方法，其改良在於，所述轉移方法包括：提供請求項1或2任一項所述的吸附裝置，藉由所述吸附裝置吸附複數發光二極管；提供一目標基板，所述目標基板上設置有複數異方性導電膠，移動所述吸附裝置或移動目標基板，以使所述複數發光二極管與目標基板上的異方性導電膠一一對準接觸；以及 對所述異方性導電膠進行熱固化或紫外固化，使所述複數發光二極管脫離所述吸附裝置轉移至目標基板上。
  7. 如請求項6所述的轉移方法，其中，每一發光二極管被一磁性層部分包覆，所述磁性層使得所述發光二極管可被所述第二區域吸附。
  8. 如請求項7所述的轉移方法，其中，還包括：於將所述複數發光二極管脫離所述吸附裝置轉移至目標基板上之後，將各個所述發光二極管上的所述磁性層去除。
  9. 如請求項7所述的轉移方法，其中，所述磁性層為因瓦合金。
TW108124579A 2019-07-05 2019-07-11 吸附裝置、轉移系統及轉移方法 TWI736931B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910604687.2A CN110379758B (zh) 2019-07-05 2019-07-05 吸附装置、转移系统及转移方法
CN201910604687.2 2019-07-05

Publications (2)

Publication Number Publication Date
TW202102423A TW202102423A (zh) 2021-01-16
TWI736931B true TWI736931B (zh) 2021-08-21

Family

ID=68252179

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108124579A TWI736931B (zh) 2019-07-05 2019-07-11 吸附裝置、轉移系統及轉移方法

Country Status (3)

Country Link
US (2) US11295971B2 (zh)
CN (1) CN110379758B (zh)
TW (1) TWI736931B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110379758B (zh) * 2019-07-05 2021-02-02 深超光电（深圳）有限公司 吸附装置、转移系统及转移方法
CN110416122B (zh) * 2019-07-05 2021-06-29 深超光电（深圳）有限公司 发光元件的转移方法、显示面板及其制备方法、基板
WO2021119965A1 (zh) * 2019-12-17 2021-06-24 重庆康佳光电技术研究院有限公司 一种巨量转移装置及巨量转移方法
CN111244016B (zh) * 2020-03-10 2022-10-18 深超光电（深圳）有限公司 转移装置、转移装置的制备方法、转移方法
CN113496936B (zh) * 2020-04-08 2023-10-10 台湾爱司帝科技股份有限公司 发光二极管芯片结构以及芯片移转系统与方法
TWI718923B (zh) * 2020-04-08 2021-02-11 台灣愛司帝科技股份有限公司 發光二極體晶片結構以及晶片移轉系統與方法
CN112635400B (zh) * 2021-01-07 2022-10-04 Tcl华星光电技术有限公司 一种磁吸式MicroLED巨量转移结构及方法
CN114112574B (zh) * 2021-11-15 2022-06-24 哈尔滨工业大学（威海） 用于介观尺度弯曲试样力学性能测试的磁控溅射成形装置
CN114678451B (zh) * 2022-03-21 2024-07-19 Tcl华星光电技术有限公司 转移装置及显示面板的制备方法
WO2024138402A1 (zh) * 2022-12-28 2024-07-04 厦门市芯颖显示科技有限公司 临时载板、转移组件和微器件转移方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104115266A (zh) * 2012-02-09 2014-10-22 勒克斯维科技公司 转移并键合微型器件阵列的方法
CN105789122A (zh) * 2014-12-12 2016-07-20 财团法人工业技术研究院 光电元件的转移方法
TWI572259B (zh) * 2015-11-04 2017-02-21 韓華泰科股份有限公司 半導體基板之真空吸附裝置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002062825A (ja) * 2000-08-18 2002-02-28 Sony Corp 画像表示装置及びその製造方法
US7460224B2 (en) * 2005-12-19 2008-12-02 Opto Trace Technologies, Inc. Arrays of nano structures for surface-enhanced Raman scattering
JP2006127681A (ja) * 2004-10-29 2006-05-18 Hitachi Ltd 磁気記録媒体及びその製造方法、磁気記録再生装置
TWI314129B (en) * 2006-02-09 2009-09-01 Au Optronics Corp Substrate delivery apparatus
US20150228517A1 (en) * 2014-02-13 2015-08-13 Apple Inc. Universal process carrier for substrates
JP2016003386A (ja) * 2014-06-19 2016-01-12 株式会社システム技研 成膜ホルダ
CN109065692A (zh) * 2018-08-01 2018-12-21 厦门多彩光电子科技有限公司 一种led的封装方法
CN109378370B (zh) * 2018-12-05 2020-08-25 合肥京东方光电科技有限公司 微型led的转移设备、显示基板的制造系统及制造方法
CN110379758B (zh) * 2019-07-05 2021-02-02 深超光电（深圳）有限公司 吸附装置、转移系统及转移方法
CN110379759B (zh) * 2019-07-05 2021-02-02 深超光电（深圳）有限公司 吸附装置、转移系统及转移方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104115266A (zh) * 2012-02-09 2014-10-22 勒克斯维科技公司 转移并键合微型器件阵列的方法
CN105789122A (zh) * 2014-12-12 2016-07-20 财团法人工业技术研究院 光电元件的转移方法
TWI572259B (zh) * 2015-11-04 2017-02-21 韓華泰科股份有限公司 半導體基板之真空吸附裝置

Also Published As

Publication number Publication date
CN110379758B (zh) 2021-02-02
TW202102423A (zh) 2021-01-16
US11676840B2 (en) 2023-06-13
US11295971B2 (en) 2022-04-05
US20220172970A1 (en) 2022-06-02
US20210005489A1 (en) 2021-01-07
CN110379758A (zh) 2019-10-25

Similar Documents

Publication Publication Date Title
TWI736931B (zh) 吸附裝置、轉移系統及轉移方法
TWI736932B (zh) 吸附裝置、轉移系統及轉移方法
US9698160B2 (en) Method for transferring micro devices and method for manufacturing display panel
CN107680983B (zh) Micro LED阵列器件、拾取装置及相关制作方法、转运方法
CN110998819B (zh) 电气元件传送装置
CN109378370B (zh) 微型led的转移设备、显示基板的制造系统及制造方法
KR20210089691A (ko) 마이크로 요소의 이송 장치 및 이송 방법
TWI736930B (zh) 吸附裝置、吸附裝置的製作方法及轉移系統
KR102659865B1 (ko) 디스플레이 모듈 및 디스플레이 모듈의 제조 방법
JP6600060B2 (ja) マイクロコンポーネントデバイスの大量配列方法およびシステム
WO2021056840A1 (zh) 微型发光二极管的转移方法和显示面板
TWI735911B (zh) 吸附裝置及其製作方法及轉移系統
TWI792145B (zh) 傳送基板
CN112424958B (zh) 微型发光二极管的巨量转移方法及系统
US20230028998A1 (en) Element transferring method and electronic panel manufacturing method using the same
JP2020194089A (ja) 転写部材、転写部材の製造方法及び発光基板の製造方法
WO2021119997A1 (zh) 一种目标转移结构及其制造方法、以及发光二极管固定方法
TWI829172B (zh) 巨量轉移系統及巨量轉移方法
JP2019125780A (ja) 導電性フィルム、光電半導体装置及びその製造方法
US20220216084A1 (en) Method for transferring electronic component
CN113972233A (zh) 一种发光器件转印方法及发光器件转印系统
JP2004335487A (ja) マスク及びその製造方法、エレクトロルミネッセンス装置及びその製造方法並びに電子機器