TWI735911B - 吸附裝置及其製作方法及轉移系統 - Google Patents

吸附裝置及其製作方法及轉移系統 Download PDF

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TWI735911B
TWI735911B TW108124586A TW108124586A TWI735911B TW I735911 B TWI735911 B TW I735911B TW 108124586 A TW108124586 A TW 108124586A TW 108124586 A TW108124586 A TW 108124586A TW I735911 B TWI735911 B TW I735911B
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substrate
adsorption device
magnet
hole
cladding layer
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TW202105581A (zh
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陳柏良
林永富
田仲広久
島田康憲
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大陸商深超光電（深圳）有限公司
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Abstract

本發明提供一種吸附裝置，包括：基板；及複數磁力單元，所述複數磁力單元間隔設置於所述基板的同一表面上，每一所述磁力單元包括磁體及部分包覆所述磁體的包覆層，所述包覆層為強磁性材料；每一所述磁體遠離所述基板的一側相對一所述包覆層裸露。本發明提供的吸附裝置，僅於複數特定位置產生磁力，可實現單次轉移複數目標物體。本發明還提供一種吸附裝置的製作方法及轉移系統。

Description

吸附裝置及其製作方法及轉移系統
本發明涉及顯示面板製作領域，尤其涉及一種吸附裝置、該吸附裝置的製作方法及應用該吸附裝置的轉移系統。
於LED顯示裝置尤其是Micro-LED顯示面板的製造過程中，需要將大量的LED移轉到具有電路的基板上進行安裝固定。一種習知的移轉方法是採用靜電吸附的方式，即藉由靜電將待移轉的LED吸附到一移轉機構上，移轉機構將LED傳送到基板的上方之後，移除靜電，使LED脫離吸附而落到基板上。然而，所述靜電吸附的方式存在可能基板上的電路板被靜電擊傷的風險。
本發明一方面提供一種吸附裝置，包括：基板；及複數磁力單元，所述複數磁力單元間隔設置於所述基板的同一表面上，每一所述磁力單元包括磁體及部分包覆所述磁體的包覆層，所述包覆層為強磁性材料；每一所述磁體遠離所述基板的一側相對一所述包覆層裸露。
本發明另一方面提供一種吸附裝置的製作方法，包括：提供數量相等的複數磁體及複數包覆層，每一所述包覆層具有一貫穿所述包覆層的通孔，所述通孔與所述磁體的形狀及尺寸被以所述磁體不會從所述通孔脫落的方式配置，每一所述包覆層為強磁性材料；將每一所述磁體對應放入一所述包覆層的所述通孔內；提供一基板，以所述基板封閉每一所述包覆層的通孔的其中一開口的方式使所述磁體與所述包覆層固定於該基板的同一表面。
本發明另一方面提供一種轉移系統，包括：吸附裝置，所述吸附裝置為如上述的吸附裝置，所述吸附裝置用於吸附發光二極管；目標基板，所述目標基板上設置有複數異方性導電膠，所述異方性導電膠用於固定所述發光二極管。
本發明實施例提供的吸附裝置，包括基板及設置於基板上的複數磁力單元，每一磁力單元包括磁體及部分包覆磁體的包覆層。由於包覆層為強磁性材料，則磁體產生的磁力線被限制於包覆層中，使得基板上僅對應各個磁力單元的設置位置上產生較為集中的磁力，以吸附目標物體。且由於包覆層對磁體磁力線的集中作用，有利於解決相鄰的磁力單元之間的磁力發生串擾，影響吸附裝置吸附效果的問題。上述吸附裝置，實現了僅於基板的特定位置(各個磁力單元的設置位置)而非整塊基板產生磁性；且基板上設置有複數磁力單元，可實現單次吸附複數目標物體。
10:吸附裝置
11:基板
111:表面
112:凹槽
12:磁力單元
121:磁體
S、N:磁極
D2、D3:外徑
122:包覆層
1221:通孔
D1:內徑
1222:第一開口
1223:第二開口
1224:側壁
20:目標物體
30:母板
40:轉移系統
41:目標基板
411:異方性導電膠
42:發光二極管
S1、S2、S3:步驟
圖1為本發明實施例提供的吸附裝置的結構示意圖。
圖2為圖1中磁力單元的結構示意圖。
圖3為本發明一變更實施例中磁力單元的結構示意圖。
圖4為本發明另一變更實施例中吸附裝置的結構示意圖
圖5為本發明實施例提供的吸附裝置製作方法的流程示意圖。
圖6為圖5中步驟S2時吸附裝置的結構示意圖。
圖7為圖5中步驟S3時吸附裝置的結構示意圖。
圖8為本發明另一實施例中吸附裝置製作流程中吸附裝置的一結構示意圖。
圖9為本發明另一實施例中吸附裝置製作流程中吸附裝置的另一結構示意圖。
圖10為本發明實施例提供的轉移系統的結構示意圖。
圖11為圖10中轉移系統的一工作狀態示意圖。
圖12為圖10中轉移系統的另一工作狀態示意圖。
請參閱圖1，本實施例提供的吸附裝置10，用於藉由產生磁力以吸附目標物體20。吸附裝置10包括基板11及設置於基板11上的複數磁力單元12。
本實施例中，基板11為可被磁力吸附的材料形成，例如為鐵、鈷、鎳中的一種或幾種的組合。每一磁力單元12皆可產生磁力吸附基板11，使得磁力單元12固定於基板11上。本實施例中，基板11為大致矩形板狀的鐵基板。
本實施例中，複數磁力單元12設置於基板11的同一表面111上，並且，複數磁力單元12於基板11的表面111上呈陣列式排佈。於其他實施例中，複數磁力單元12可以為其他方式排佈。
每一磁力單元12包括一個磁體121及部分包覆磁體121的包覆層122。磁體121具有兩個磁極S極及N極。包覆層122為可被磁力吸附的材料形成，本實施例中，包覆層122為強磁性材料形成，例如鐵磁性物質或亞鐵磁性物質，具體可為鐵、鈷、鎳或其兩者或兩者以上的組合物。本實施例中，包覆層122與基板11採用相同的材料。
請參閱圖2，本實施例中，每一包覆層122具有一貫穿包覆層122的通孔1221，該通孔1221具有第一開口1222及第二開口1223以及形成於第一開口1222及第二開口1223之間的側壁1224。磁體121位於通孔1221中，且與通孔1221的側壁1224貼合。每一包覆層122具有第一開口1222的一側設置於基板11上，也即，每一包覆層122上通孔1221的第一開口1222被基板11封閉(同時參圖1及圖2)，每一磁體121藉由第二開口1223相對包覆層122裸露。磁體121的磁極S極及N極於第一開口1222到第二開口1223的方向層疊設置，本實施例中，N極更靠近第一開口1222(基板11)一側，S極更靠近第二開口1223一側。
請繼續同時參圖1及圖2，進一步的，本實施例中，每一包覆層122上通孔1221的內徑D1從靠近基板11的第一開口1222到遠離基板11的第二開口1223逐漸減小，也即，第一開口1222處的內徑D1最大，第二開口1223處的內徑D1最小。上述內徑D1大小的設置方式有利於將磁體121固定於包覆層122的通孔1221內而不易從通孔1221脫出。本實施例中，包覆層122上的通孔1221內徑D1是變化的，但包覆層122的外徑D2處處相等，為40μm。
可以理解，只要第二開口1223處的內徑小於磁體121靠近第二開口1223端的尺寸以防止磁體121從通孔1221的第二開口1223端滑落即可。
請參閱圖3，於一變更實施例中，通孔1221的內徑D1也可設置為處處相等，磁體121的外徑D3小於包覆層122上通孔1221的內徑D1，但為了提升磁體121於包覆層122的通孔1221內的固定力度，磁體121的外徑D3與包覆層122上通孔1221的內徑D1數值不宜相差太大。或者，於其他實施例中，也可以藉由黏結劑(圖未示)將磁體121固定於通孔1221內。
請再參閱圖1，本發明實施例提供的吸附裝置10，由於磁體121被包覆層122部分包覆，且包覆層122為強磁性材料，則磁體121產生的磁力線被限制於包覆層122中，使得吸附裝置10只於各個磁力單元12所在的位置產生較為集中的磁力，以吸附目標物體20。且由於包覆層122對磁體121磁力線的集中作用，有利於解決相鄰的磁力單元12之間的磁力發生串擾，影響吸附裝置10吸附效果的問題。上述吸附裝置10，實現了僅於基板11的特定位置(各個磁力單元12的設置位置)而非整塊基板11產生磁性；且基板11上設置有複數磁力單元12，可實現單次吸附複數目標物體20。
並且，各個磁力單元12因為磁力被固定於基板11上，則磁力單元12可受力被從基板11上取下而不對磁力單元12或基板11造成損壞，則基板11上的磁力單元12的數量及各個磁力單元12之間的位置關係均可以根據實際需要進行排列組合，有利於提升吸附裝置10的使用靈活性。
請參閱圖4，於另一變更實施例中，基板11的表面111上開設有與複數磁力單元12一一對應的凹槽112，每一磁力單元12設置於一凹槽112中。上述基板11開設凹槽112的方式，可以更方便各個磁力單元12於基板11上的定位。
請參閱圖5，本實施例還提供一種吸附裝置的製作方法，包括如下步驟：步驟S1，提供數量相等的複數磁體及複數包覆層，每一所述包覆層具有一貫穿所述包覆層的通孔，所述通孔與所述磁體的形狀及尺寸被以所述磁體不會從所述通孔脫落的方式配置，每一所述包覆層為強磁性材料；步驟S2，將每一所述磁體對應放入一所述包覆層的所述通孔內；步驟S3，提供一基板，以所述基板封閉每一所述包覆層的通孔的其中一開口的方式使所述磁體與所述包覆層固定於該基板的同一表面。
請參閱圖6，本實施例步驟S1中，提供複數磁體121及複數包覆層122，其中，磁體121與包覆層122數量相等。磁體121與包覆層122的結構材料如 前所述。步驟S2中，將每一磁體121對應放入一包覆層122的通孔1221中，具體的，將每一磁體121從包覆層122上內徑D1較大的第一開口1222放入包覆層122的通孔1221中。於另一實施例中，通孔1221內徑D1處處相等，則擇一開口將磁體121放入通孔1221即可。
請參閱圖7，將磁體121放入包覆層122後，步驟S3中，提供基板11，將各個包覆層122設置於基板11。本實施例中，基板11為可被磁力吸附的材料，各個磁體121產生的磁力使得各個磁力單元12固定於基板11上，將包覆層122開設有內徑D1最大的第一開口1222的一側固定於基板11上。於另一實施例中，基板為不能被磁力吸附的材料，步驟S3中，將包覆層122開設有內徑D1最大的第一開口1222的一側黏附於基板11，使得基板11封閉每一包覆層122的第一開口1222。
於另一實施例中，基板11及包覆層122為一體成型。具體的，請參閱圖8，提供一母板30，對母板30進行蝕刻形成基板11及包覆層122，請參閱圖9，將磁體121放入通孔1221中。應當理解，該製作方式僅適用於通孔1221內徑D1處處相等的情況。
請參閱圖10，本實施例還提供一種轉移系統40，轉移系統40包括吸附裝置10及目標基板41。本實施例中，轉移系統40用於完成顯示面板製作過程中發光二極管42的單次巨量轉移，也即，轉移系統40用於在單次轉移操作中同時轉移多顆發光二極管42。吸附裝置10如上所述，此處不再贅述。
本實施例中，目標基板41為一顯示面板的有源基板/陣列基板，目標基板41上定義有複數畫素區域，每一個磁力單元12與基板11上的一個畫素區域的位置對應。目標基板41上還設置有複數陣列式排佈的異方性導電膠411，每一異方性導電膠411位於一個畫素區域中。發光二極管42為如迷你發光二極管(mini Light Emit Diode，mini LED)、微型發光二極管(Micro Light Emit Diode，Micro LED)及常規尺寸的無機發光二極管(LED)等。本文所述mini LED是指次毫米級發光二極管，尺寸約為100μm~200μm以上；Micro LED是指尺寸為100μm以下的LED。
以下對轉移系統40的工作過程進行闡述：請繼續參閱圖10，將基板11設置有磁力單元12的表面111正對發光二極管42，發光二極管42由具有磁性的材料製成或其包含磁性粒子，使得發光二極管 42具有與磁體121遠離基板11的磁極相反的磁性，則發光二極管42受到指向吸附裝置10方向的磁力(圖中虛線箭頭)，被磁力單元12吸附住。基板11上有複數磁力單元12，每一磁力單元12吸附一顆發光二極管42，則吸附裝置10單次可吸附複數發光二極管42，於顯示面板製程中，吸附裝置10單次可吸附的發光二極管42數量可達到上萬顆。
請參閱圖11，藉由移動吸附裝置10至目標基板41或移動目標基板41至吸附裝置10，使得吸附裝置10所吸附的各個發光二極管42與目標基板41上的異方性導電膠411一一對應接觸。再對異方性導電膠411進行熱固化或UV固化，使得各個發光二極管42一一對應被黏附於異方性導電膠411上。
請參閱圖12，發光二極管42與異方性導電膠411之間的黏附力大於吸附裝置10對發光二極管42的吸附力，則移動吸附裝置10時，發光二極管42即可從吸附裝置10脫離，而被固定於目標基板41。
如上述的過程，即可實現單次吸附複數發光二極管42並將其轉移至目標基板41，尤其是於發光二極管42的尺寸較小(比如mini LED及Micro LED)的情況下，上述的轉移系統40有利於提高顯示面板的製作效率。
本技術領域之普通技術人員應當認識到，以上之實施方式僅是用來說明本發明，而並非用作為對本發明之限定，只要於本發明之實質精神範圍之內，對以上實施例所作之適當改變及變化均落於本發明要求保護之範圍之內。
10:吸附裝置
11:基板
111:表面
12:磁力單元
121:磁體
S、N:磁極
122:包覆層
20:目標物體

Claims (10)

  1. 一種吸附裝置，其改良在於，包括：基板；以及複數磁力單元，所述複數磁力單元間隔設置於所述基板的同一表面上，每一所述磁力單元包括磁體及部分包覆所述磁體的包覆層，所述包覆層為強磁性材料，每一所述包覆層具有一貫穿所述包覆層的通孔，所述通孔具有相對的兩個開口及位於所述兩個開口之間的側壁，所述磁體位於所述通孔內並與所述側壁貼合，所述基板封閉每一所述包覆層的通孔的其中一開口；每一所述磁體遠離所述基板的一側相對一所述包覆層裸露。
  2. 如請求項1所述的吸附裝置，其中，每一所述通孔的內徑從靠近所述基板的一開口到遠離所述基板的一開口逐漸減小。
  3. 如請求項1所述的吸附裝置，其中，每一所述通孔的內徑處處相等。
  4. 如請求項1所述的吸附裝置，其中，所述強磁性材料為鐵、鈷、鎳中的至少一種。
  5. 如請求項1所述的吸附裝置，其中，所述基板及包覆層材料相同。
  6. 如請求項1所述的吸附裝置，其中，所述基板為可被磁力吸附的材料，各個所述磁體產生的磁力吸附所述基板使得各個所述磁力單元固定於所述基板上。
  7. 一種吸附裝置的製作方法，其改良在於，包括：提供數量相等的複數磁體及複數包覆層，每一所述包覆層具有一貫穿所述包覆層的通孔，所述通孔與所述磁體的形狀及尺寸被以所述磁體不會從所述通孔脫落的方式配置，每一所述包覆層為強磁性材料；將每一所述磁體對應放入一所述包覆層的所述通孔內；提供一基板，以所述基板封閉每一所述包覆層的通孔的其中一開口的方式使所述磁體與所述包覆層固定於該基板的同一表面。
  8. 如請求項7所述的吸附裝置的製作方法，其中，每一所述通孔的內徑從靠近所述基板的一開口到遠離所述基板的一開口逐漸減小。
  9. 一種轉移系統，其改良在於，包括： 吸附裝置，所述吸附裝置為如請求項1~4任一項所述的吸附裝置，所述吸附裝置用於吸附發光二極管；以及目標基板，所述目標基板上設置有複數異方性導電膠，所述異方性導電膠用於固定所述發光二極管。
  10. 如請求項9所述的轉移系統，其中，所述目標基板為顯示面板的有源基板，所述目標基板定義有複數畫素區域，每一所述磁力單元與一所述畫素區域的位置相對應。
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US20210002087A1 (en) 2021-01-07
US11498779B2 (en) 2022-11-15

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