WO2020107874A1 - 微发光二极管阵列器件、转移装置及转移方法 - Google Patents

微发光二极管阵列器件、转移装置及转移方法 Download PDF

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Publication number
WO2020107874A1
WO2020107874A1 PCT/CN2019/092148 CN2019092148W WO2020107874A1 WO 2020107874 A1 WO2020107874 A1 WO 2020107874A1 CN 2019092148 W CN2019092148 W CN 2019092148W WO 2020107874 A1 WO2020107874 A1 WO 2020107874A1
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Prior art keywords
emitting diode
micro light
diode array
light emitting
array device
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PCT/CN2019/092148
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English (en)
French (fr)
Inventor
程卫高
任雅磊
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昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Priority to KR1020217017858A priority Critical patent/KR102530312B1/ko
Publication of WO2020107874A1 publication Critical patent/WO2020107874A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • the present application relates to the transfer of micro light-emitting diode array devices, in particular to a micro light-emitting diode array device, a transfer device and a transfer method.
  • Micro-LED Micro-Light-emitting Diodes
  • the technical problem mainly solved by the present application is to provide a micro light emitting diode array device, a transfer device and a transfer method, so as to protect the micro light emitting diode from being damaged when a large number of micro light emitting diodes are transferred, and it is easy to clean the micro light emitting diode after the transfer is completed The purpose of the surface.
  • micro light-emitting diode array device including:
  • the magnetic material layer on the side of the support layer away from the micro light-emitting diode array.
  • a transfer device including:
  • a number of electromagnetic blocks located on the surface of the bearing plate located on the surface of the bearing plate
  • a plurality of coils located in the bearing plate and correspondingly connected to the electromagnetic quick-to-ones;
  • a control circuit connected to the coils is used to control the coils to generate electricity and generate a magnetic field.
  • Another technical solution adopted by the present application is to provide a method for transferring a micro light emitting diode array device, including:
  • the micro light emitting diode array device is placed in the receiving area of the receiving substrate.
  • a support layer and a magnetic material layer are formed on the micro light-emitting diode.
  • a support layer and a magnetic material layer are formed on the micro light-emitting diode.
  • FIG. 1 is a schematic structural diagram of a first embodiment of a micro light-emitting diode array device of the present application
  • FIG. 2 is a schematic structural diagram of a second embodiment of a micro light-emitting diode array device of the present application
  • FIG. 3 is a schematic flow chart of the manufacturing method of the first embodiment of the micro light-emitting diode array device of the present application.
  • FIG. 4 is a schematic flow chart of a manufacturing method of a second embodiment of a micro light-emitting diode array device of the present application.
  • FIG. 5 is a schematic structural diagram of a transfer device of a micro light-emitting diode array device of the present application
  • FIG. 6 is a schematic flow chart of a method for manufacturing a transfer device of a micro light-emitting diode array device of the present application
  • FIG. 7 is a schematic structural diagram of a micro-light emitting diode array device transfer system of the present application.
  • FIG. 8 is a schematic flow chart of a first embodiment of a method for transferring a micro light-emitting diode array device of the present application
  • FIG. 9 is a schematic flowchart of a second embodiment of a method for transferring a micro light-emitting diode array device of the present application.
  • FIG. 1 is a schematic structural diagram of a first embodiment of a micro-light emitting diode array device 10 of the present application.
  • the micro light emitting diode array device 10 includes a micro light emitting diode array 100; a support layer 104 on the micro light emitting diode array 100 and covering the micro light emitting diode 103, the support layer 104 is a material that is easily sublimated after being heated; The supporting layer 104 is away from the magnetic material layer 105 on the side of the micro LED array 100.
  • the material of the support layer 104 is selected from materials with a sublimation temperature of 100°C to 200°C, such as any one or combination of trimethylolethane, anthracene, pyrene, phenanthrene, naphthacene, and pentacene, If a material with an excessively high sublimation temperature is used as the support layer 104, during the formation of the sublimation process, the micro-light-emitting diode 103 may be damaged due to an excessively high temperature.
  • the support layer 104 is formed by vapor deposition.
  • the material of the support layer 104 (such as trimethylolethane) is placed in a vacuum to evaporate or sublime to cause it to precipitate on the micro LED array 100 In this way, it can be ensured that the micro-light emitting diode is not damaged during the formation of the support layer; the support layer 104 may also be formed by other methods, which is not limited herein.
  • the magnetic material layer 105 is a soft magnetic material, and the soft magnetic material is any one or any combination of Fe, Ni, Mn; the magnetic material layer 105 is formed by low-temperature sputtering to avoid the use of magnetic materials During the formation of the layer 105, the temperature is too high to sublimate the support layer 104, and the magnetic material layer 105 may also be formed by other methods, which is not limited herein.
  • the micro LED array 100 includes: a growth substrate 101; an adhesive layer 102 on the growth substrate 101; a number of micro LEDs 103 on the adhesive layer 102; the micro LEDs 103 is connected to the growth substrate 101 through the adhesive layer 102.
  • the material of the growth substrate 101 may be conventional Any growth substrate material for the manufacture of light-emitting diodes, such as ZnSe, Zn0, sapphire (Al203), SiC, Si, GaN, GaAs, GaP, aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs) and other materials .
  • the type of light-emitting diode in this embodiment is not limited, that is, the micro-light-emitting diode 103 may be a blue-green light-emitting diode, may also be an ultraviolet light-emitting diode, etc., and the micro-light-emitting diode structure may be a horizontal-structure light-emitting diode or a vertical-structure light-emitting diode.
  • the light-emitting diode may be a light-emitting diode with a front-mounted structure or a light-emitting diode with a flip-chip structure.
  • the surface of the adhesive layer 102 has viscosity and ductility, and the material thereof may be organic materials or inorganic materials.
  • the material of the adhesive layer may be epoxy resin, polyethylene PE, polymethyl methacrylate PMMA , UV curable glue, polysiloxane and silicone resin any one or any combination.
  • the thickness of the adhesive layer can be in the range of 1 micron to tens of microns, or even thicker, as long as the micro light emitting diode can be well pasted.
  • one side of the support layer 104 may be thinned before the magnetic material layer 105 is formed.
  • the thickness of the thinned layer may be based on the flatness of the surface of the support layer 104 Wait for the actual adjustment. After thinning the side of the support layer 104 far away from the micro-light emitting diode 103 to make the surface flat, processes such as sputtering, electron beam evaporation, ion beam evaporation, etc. may be used.
  • the magnetic material layer 105 is formed on one side.
  • the material of the magnetic material layer is preferably a ferromagnetic substance. Further, the material of the magnetic material layer 105 is a soft magnetic material In order to remove the magnetism as soon as possible after being magnetized, such as any one or any combination of Fe, Ni, Co, Mn and Fe 3 O 4 .
  • FIG. 2 is a schematic structural diagram of a second embodiment of a micro light-emitting diode array device 20 of the present application.
  • the difference is that: a protective layer 106 is added between the support layer 104 and the magnetic material layer 105; the protective layer is a material that is not easily sublimated after being heated, such as silicon oxide, silicon nitride, etc.
  • the protective layer 106 is added on the support layer 104 to block the impact force generated during the formation of the magnetic material layer and protect the support layer 104 from being affected.
  • the protective layer 106 can be formed by sol or gel In this way, the bonding force between the support layer 104 and the magnetic material layer 105 can also be enhanced.
  • FIG. 3 is a schematic flowchart of the manufacturing method of the first embodiment of the micro-light emitting diode array device of the present application.
  • the method includes:
  • Step S1 Provide a growth substrate.
  • the material of the growth substrate may be any growth substrate material used in the manufacture of conventional light-emitting diodes, such as ZnSe, Zn0, sapphire (Al203), SiC, Si, GaN, GaAs, GaP, aluminum indium gallium phosphide (AlInGaP) , Aluminum gallium arsenide (AlGaAs) and other materials.
  • Al203 sapphire
  • SiC Si
  • GaN GaN
  • GaAs GaP
  • AlInGaP aluminum indium gallium phosphide
  • AlGaAs Aluminum gallium arsenide
  • Step S2 forming an adhesive layer on one side of the growth substrate.
  • the adhesive layer is used to fix several micro light-emitting diodes on the growth substrate, and the surface of the adhesive layer has adhesiveness and ductility.
  • the material may be an organic material or an inorganic material, etc.
  • the material of the adhesive layer may be epoxy resin, polyethylene PE, polymethyl methacrylate PMMA, ultraviolet curing adhesive, polysiloxane and silicone resin. Any one or any combination.
  • the thickness of the adhesive layer can be in the range of 1 micron to tens of microns, or even thicker, as long as the micro light emitting diode can be well pasted.
  • Step S3 disposing a plurality of micro light emitting diodes on the adhesive layer to form a micro light emitting diode array.
  • the type of the micro-light emitting diodes is not limited, that is, the micro-light emitting diodes can be blue-green light-emitting diodes, ultraviolet light-emitting diodes, etc., the micro-light emitting diode structure can be a horizontal structure
  • the light emitting diode may also be a light emitting diode with a vertical structure, a light emitting diode with a formal structure, or a light emitting diode with a flip structure.
  • Step S4 forming a support layer covering the micro light emitting diodes on the micro light emitting diode array.
  • the support layer is formed by vapor deposition, and its material is a material with a sublimation temperature of 100°C to 200°C, such as any one of trimethylolethane, anthracene, pyrene, phenanthrene, naphthacene, pentacene Or a combination, the support layer is used to protect the micro light emitting diode from damage during the transfer of the micro light emitting diode, and the support layer is heated to sublimate after the transfer is completed, so that it is easy to remove.
  • Step S5 forming a magnetic material layer on the side of the support layer away from the micro light-emitting diode array.
  • one side of the support layer may be thinned before the magnetic material layer is formed.
  • the thickness of the thinned layer may be based on the actual flatness of the surface of the support layer, etc.
  • make adjustments After thinning the side of the support layer away from the micro light-emitting diode to make the surface flat, processes such as sputtering, electron beam evaporation, ion beam evaporation, etc. can be used to form magnetic properties on the side of the support layer away from the micro light-emitting diode Material layer.
  • the micro-LED array device needs to be transported by magnetoelectric induction.
  • the material of the magnetic material layer is preferably a ferromagnetic substance. Further, the material of the magnetic material layer is a soft magnetic material. In order to remove the magnetism as soon as possible after being magnetized, for example, any one or any combination of Fe, Ni, Co, Mn and Fe 3 O 4 is selected.
  • FIG. 4 is a schematic flowchart of a manufacturing method of a second embodiment of a micro light-emitting diode array device of the present application.
  • the difference from the manufacturing method of the first embodiment is that between steps S4 and S5 further includes:
  • Step S51 forming a protective layer on the side of the support layer away from the light emitting diode array.
  • the protective layer is a material that is not easily sublimated after being heated, such as silicon oxide, silicon nitride, etc.
  • the protective layer is added on the support layer to block the impact force generated during the sputtering process when the magnetic material layer is formed at low temperature sputtering, Protect the support layer from being affected.
  • adding a protective layer can also enhance the bonding force between the support layer and the magnetic material layer.
  • the protective layer can be prepared by a sol or gel method, which can increase the support layer and the magnetic material layer. The adhesion between.
  • FIG. 5 is a schematic structural diagram of a micro-light emitting diode array device transfer device of the present application.
  • the micro LED array device transfer device 200 includes: a robot arm 109, a carrier plate 107 connected to the robot arm 109, the materials of the carrier plate 107 and the robot arm 109 are insulating materials, and are located on the carrier plate A number of electromagnetic blocks 106 on the surface of 107; a number of coils 108 located inside the carrier plate 107 and connected to the number of electromagnetic blocks 106 in one-to-one correspondence; and a control located inside the carrier plate 107 and connected to the number of coils 108
  • the circuit 110 is used to control the rotation of the coil 108 to generate a magnetic field, so that the electromagnetic block 106 generates magnetism.
  • each electromagnetic block 106 corresponds to a micro light-emitting diode.
  • FIG. 6 is a schematic flowchart of the manufacturing method of the micro-light emitting diode array device transfer device of the present application.
  • Step S6 Provide a bearing board.
  • the material of the bearing plate is an insulating material, and the material of the bearing plate is an insulating non-magnetic material, and the bearing plate has a certain rigidity, and does not deform under a certain force, such as glass or hard plastic.
  • Step S7 Set a plurality of electromagnetic blocks on a surface of the carrier board.
  • the area of the electromagnetic block is slightly larger than the area of the micro light-emitting diodes, ensuring the accuracy of the alignment and preventing Offset position during adsorption.
  • Step S8 A plurality of coils connected to each electromagnetic block in a one-to-one correspondence are provided inside the bearing plate.
  • the coil is a material with good electrical conductivity, such as copper and iron.
  • Step S9 Set a control circuit connected to the coils inside the carrier board.
  • the control circuit can simultaneously control several coils to make the coils generate a magnetic field, that is, all the coils correspond to the same control circuit. In this case, the control circuit can connect all the coils.
  • the control circuit may include a current or voltage supply source, and a switching circuit.
  • a current or voltage supply source When working to absorb the Micro-LED array device to be transferred, it is only necessary to turn on the control circuit to provide current or voltage to the coils, rotate the coils to generate a magnetic field, and then magnetize the electromagnetic blocks.
  • the control circuit may be uniformly controlled by a control chip, and the control circuit is integrated on the control chip. In order to ensure that the control process of all electromagnetic blocks is more consistent, that is, to ensure that the magnetic properties of all electromagnetic blocks are consistent, the coils connecting all the electromagnetic blocks are connected to the same control circuit.
  • FIG. 7 is a schematic structural diagram of a micro-light emitting diode array device transfer system of the present application.
  • the transfer system includes a micro light-emitting diode array device 10 and a transfer device 200.
  • the micro light emitting diode array device 10 includes a micro light emitting diode array 100, a support layer 104 on the micro light emitting diode array 100 and covering the micro light emitting diode 103, and a support layer 104 located on the support layer 104 away from the micro light emitting diode
  • the magnetic material layer 105 on the side of the array 100.
  • the material of the support layer 104 is a material with a sublimation temperature of 100°C to 200°C, such as any one or a combination of trimethylolethane, anthracene, pyrene, phenanthrene, naphthacene, and pentacene, which is heated After easy sublimation;
  • the magnetic material layer 105 is a soft magnetic material, and the soft magnetic material is any one or any combination of Fe, Ni, Mn.
  • the micro LED array 100 includes: a growth substrate 101; an adhesive layer 102 on the growth substrate 101; a number of micro LEDs 103 on the adhesive layer; the micro LEDs 103 pass through The adhesive layer 102 is connected to the growth substrate 101.
  • the transfer device 200 includes: a robot arm 109, a carrier plate 107 connected to the robot arm 109, the material of the carrier plate 107 and the robot arm 109 is an insulating material, and a number of electromagnetic waves on the surface of the carrier plate 107 Blocks 106; coils 108 located inside the carrier board 107 and connected to the electromagnetic blocks 106 in one-to-one correspondence; and a control circuit 110 located inside the carrier board 107 and connected to the coils 108 for The control coil 108 rotates to generate a magnetic field to make the electromagnetic block 106 magnetic.
  • the control circuit 110 is energized to rotate the coil 108 to generate a magnetic field, and the electromagnetic block 106 generates magnetism under the induction of the magnetic field of the coil 108 to generate magnetic force with the magnetic material layer 105 on the micro light-emitting diode array.
  • Each micro light emitting diode on the micro light emitting diode array 100 is adsorbed to be transferred to the receiving area corresponding to the receiving substrate.
  • the magnetic force between the electromagnetic block 106 and the magnetic material layer 105 is greater than the adhesive force of the adhesive layer 102 between the micro LED 103 and the growth substrate 101.
  • FIG. 8 is a schematic flowchart of a first embodiment of a method for transferring a micro light-emitting diode array device of the present application.
  • Step S201 Move the transfer device above the micro LED array device.
  • the transfer device of the Micro-LED array device is moved above the Micro-LED array device under the control of a mechanical arm.
  • the transfer device includes several pickup units, one pickup unit includes a coil and an electromagnetic block and an insulating window connected to the coil; one pickup unit further includes a control unit for the pickup unit
  • the pickup unit as a whole is controlled by the same control circuit.
  • Step S202 align each electromagnetic block on the transfer device with each light emitting diode on the micro light emitting diode array device.
  • the way to align each electromagnetic block on the transfer device with each light-emitting diode on the micro light-emitting diode array device one by one is to place the pickup device in a plane parallel to the receiving substrate Horizontal movement is performed to align the electromagnetic block with the magnetic material layer on the Micro-LED array device one by one.
  • the electromagnetic block and the magnetic material layer on the Micro-LED array device may be in direct contact during the alignment process To improve the accuracy of the alignment effect.
  • Step S203 Turn on the control circuit in the transfer device.
  • control circuit causes the coil to rotate at a high speed to generate a magnetic field, and makes the electromagnetic block corresponding to the coil magnetic.
  • Step S204 controlling the coil in the transfer device to generate electricity to generate a magnetic field to make each electromagnetic block magnetic, and adsorb the magnetic material layer on the support layer covered above the Micro-LED array device.
  • the magnetic force generated by the electromagnetic block in the transfer device and the magnetic force between the magnetic material layer are greater than the adhesive force of the adhesive layer between the micro light emitting diode and the growth substrate, so that the micro light emitting diode is separated from the growth substrate.
  • Step S205 Move the transfer device that adsorbs the micro light-emitting diode to above the receiving substrate.
  • the transfer device is moved above the receiving substrate under the control of a mechanical arm.
  • Step S206 Align the micro light-emitting diode on the transfer device to the receiving area on the receiving substrate.
  • the robotic arm controls the micro-LED transfer device to move slightly to align the transfer device with the receiving area of the receiving substrate.
  • Step S207 Place the micro light-emitting diode on the receiving area on the receiving substrate.
  • the mechanical arm is controlled to move slightly, and the micro light-emitting diode is placed on the receiving area on the receiving substrate, so as to prevent the micro-light emitting diode from being damaged by excessive force.
  • Step S2071 heating the micro light emitting diode to sublimate the supporting layer.
  • the micro light-emitting diode can be directly heated, and the material of the support layer is a material with a sublimation temperature of 100°C to 200°C, such as trimethylolethane, anthracene, pyrene, phenanthrene, naphthacene, pentacene In any one or combination of the two, when the temperature reaches the sublimation temperature, the support layer sublimates.
  • Step S2072 the magnetic material layer and the protective layer above the micro light-emitting diode are sucked away by the electromagnetic block in the transfer device.
  • the magnetic material layer covers the protective layer and is bonded to the protective layer, and the bonding force between the magnetic material layer and the protective layer is greater than the The magnetic force between the electromagnetic block and the magnetic material layer can directly suck away the magnetic material layer and the protective layer through the magnetic force of the electromagnetic block.
  • Step S2073 Close the control circuit.
  • control circuit is turned off, the magnetic field on the electromagnetic block is unloaded, and the electromagnetic block loses its magnetism.
  • FIG. 9 is a schematic flowchart of a second embodiment of a method for transferring a micro light-emitting diode array device of the present application.
  • the second embodiment has the following differences:
  • Step 2081 Close the control circuit in the transfer device.
  • control circuit is turned off, the magnetic field on the electromagnetic block is unloaded, and the electromagnetic block loses its magnetism.
  • Step 2082 Heating the micro light-emitting diode to sublimate the support layer.
  • the heating temperature reaches 100° C., the support layer will sublimate to gas removal.
  • Step 2083 Clean the micro light-emitting diode to remove the magnetic material layer and the protective layer.
  • the magnetic material layer is adhered to the protective layer and scattered on the micro light-emitting diode. At this time, the magnetic material layer can be removed by directly washing with clean water.
  • the Micro-LED array device, manufacturing method, and transfer method of the present application form a support layer above the Micro-LED, and form a protective layer and a magnetic material layer on the side of the support layer away from the Micro-LED array, and An electromagnetic block, a coil and a control circuit are provided on the transfer device, the electromagnetic block is magnetically attracted by the control circuit to complete the transfer, and after the transfer, the support layer is sublimated by heating to remove the support layer and the magnetic material layer.
  • the magnetic material layer is a soft magnetic material, so as to remove the magnetism as soon as possible after being magnetized, such as any one or any combination of Fe, Ni, Co, Mn, and Fe 3 O 4 , the material of the support layer is a sublimation temperature of 100 °C ⁇ 200 °C material, such as trimethylolethane, anthracene, pyrene, phenanthrene, naphthacene, pentacene any one or combination, when the heating temperature reaches 100 °C, the support layer will Sublimation gas removal can protect the surface of Micro-LED array devices from damage.
  • the micro light-emitting diode array only describes some related structures and functions, and the other structures and functions are the same as those of the micro-light emitting diode array in the prior art, which will not be repeated here.

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Abstract

本申请提供微发光二极管阵列器件、转移装置及转移方法。阵列器件包括微发光二极管阵列；位于所述微发光二极管阵列上且覆盖所述微发光二极管的支撑层，所述支撑层为受热后易升华材料；位于所述支撑层远离所述微发光二极管阵列一侧的磁性材料层，以此实现在转移微发光二极管阵列器件时使其不受损伤以及在转移结束后易于清理的目的。

Description

微发光二极管阵列器件、转移装置及转移方法 【技术领域】
本申请涉及微发光二极管阵列器件的转运，特别是涉及一种微发光二极管阵列器件、转移装置及转移方法。
【背景技术】
随着显示行业的快速发展，显示技术的不断更新迭代，微发光二极管(Micro Light-emitting Diodes，Micro-LED)显示技术有望成为下一代主流显示技术。Micro-LED显示技术比目前的OLED显示技术拥有更高的亮度、更好的发光效率以及更低的功耗，具有明显的技术优势。但在实际开发过程中仍存在很多的问题，其中，如何将大量的LED转移至驱动面板上且不会损坏LED表面是目前困扰量产的主要问题之一。
【发明内容】
本申请主要解决的技术问题是提供一种微发光二极管阵列器件、转移装置及转移方法，以实现在大量转移微发光二极管时，保护其不受损伤以及在转移结束后易于清理不损伤微发光二极管表面的目的。
为解决上述技术问题，本申请采用的一个技术方案是：
提供一种微发光二极管阵列器件，包括：
微发光二极管阵列；
位于所述微发光二极管阵列上且覆盖所述微发光二极管的支撑层，所述支撑层为受热后易升华材料；及
位于所述支撑层远离所述微发光二极管阵列一侧的磁性材料层。
为解决上述技术问题，本申请采用的又一个技术方案是：提供一种转移装置，包括：
承载板；
位于所述承载板表面的若干电磁块；
位于所述承载板内且与所述若干电磁快一一对应连接的若干线圈；及
与所述若干线圈连接的控制电路，用于控制所述线圈通电产生磁场。
为解决上述技术问题，本申请采用的另一个技术方案是：提供一种微发光二极管阵列器件转移方法，包括：
提供一种转移装置；
将转移装置移动至微发光二极管阵列器件上方；
将所述转移装置与所述微发光二极管阵列器件上的发光二极管对准；
开启所述转移装置；
控制所述转移装置通电产生磁性吸附微发光二极管的磁性材料；
将吸附有所述微发光二极管阵列器件的转移装置移动至接收基板上方；
将所述微发光二极管阵列器件对准所述接收基板上的接收区域；及
将所述微发光二极管阵列器件放置在所述接收基板的接收区域。
本申请的有益效果是：区别于现有技术的情况，本申请通过在所述微发光二极管上方形成支撑层与磁性材料层，所述支撑层的材料升华温度为100℃～200℃的材料，如三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合，以此实现在转移微发光二极管阵列器件时使其不受损伤以及在转移结束后易于清理不损伤微发光二极管表面的目的。
【附图说明】
图1是本申请微发光二极管阵列器件第一实施例的结构示意图；
图2是本申请微发光二极管阵列器件第二实施例的结构示意图；
图3是本申请微发光二极管阵列器件的第一实施例制作方法的流程示意图；
图4是本申请微发光二极管阵列器件的第二实施例制作方法的流程示意图；
图5是本申请微发光二极管阵列器件转移装置的结构示意图；
图6是本申请微发光二极管阵列器件转移装置制作方法的流程示意图；
图7是本申请微发光二极管阵列器件转移系统的结构示意图；
图8是本申请微发光二极管阵列器件转移方法的第一实施例的流程示意图；
图9是本申请微发光二极管阵列器件转移方法的第二实施例的流程示意图。
【具体实施方式】
下面结合附图和实施例对本申请进行详细的说明。
请参阅图1，是本申请微发光二极管阵列器件10的第一实施例结构示意图。所述微发光二极管阵列器件10包括微发光二极管阵列100；位于所述微发光二极管阵列100上且覆盖所述微发光二极管103的支撑层104，所述支撑层104为受热后易升华材料；位于所述支撑层104远离所述微发光二极管阵列100一侧的磁性材料层105。
其中，所述支撑层104的材料选用升华温度为100℃～200℃的材料，如三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合，若选用升华温度过高的材料作为支撑层104，其在形成升华过程中，会由于温度过高而对所述微发光二极管103造成损坏。所述支撑层104采用蒸镀的方式形成，具体的，将所述支撑层104材料(如三羟甲基乙烷)置于真空中进行蒸发或升华，使其在微发光二极管阵列100上析出，以此可以保证形成支撑层的过程中不对所述微发光二极管造成损坏；所述支撑层104也可通过其他方式形成，在此不做限定。
其中，所述磁性材料层105为软磁性材料，所述软磁性材料为Fe、Ni、Mn中的任意一种或任意组合；所述磁性材料层105采用低温溅射方式形成，避免在磁性材料层105形成过程中温度过高使所述支撑层104升华，所述磁性材料层105也可通过其他方式形成，在此不做限定。
其中，所述微发光二极管阵列100包括：生长衬底101；位于所述生长衬底101上的粘结层102；位于所述粘结层102上的若干微发光二 极管103；所述微发光二极管103通过所述粘结层102与所述生长衬底101连接。
在所述生长衬底101上方先形成粘结层102，再将所述若干微发光二极管103通过粘结层102贴在所述生长衬底上101，所述生长衬底101的材料可以为常规发光二极管制作用的任意生长基板材料，如选用ZnSe、Zn0、蓝宝石(Al203)、SiC、Si、GaN、GaAs、GaP、磷化铝铟镓(Al InGaP)、铝砷化镓(AlGaAs)等材料。
本实施例中的发光二极管类型不做限制，即微发光二极管103可以为蓝绿发光二极管，也可以为紫外发光二极管等，微发光二极管结构可以为水平结构的发光二极管，也可以为垂直结构的发光二极管，可以为正装结构的发光二极管，也可以为倒装结构的发光二极管。
所述粘结层102的表面具有粘性与延展性，其材料可以为有机材料或无机材料等，具体地，粘结层的材料可以为环氧树脂、聚乙烯PE、聚甲基丙烯酸甲酯PMMA、紫外线固化胶、聚硅氧烷和硅氧树脂中任意一种或任意组合。并且粘结层的厚度可在1微米-几十微米级别，甚至更厚，只要能够良好的粘贴微发光二极管即可。
为了确保磁性材料层105均匀的形成在所述支撑层104上，在形成磁性材料层105之前可先将支撑层104的一侧进行减薄，减薄的厚度可根据支撑层104表面的平整度等实际进行调整。对所述支撑层104远离所述微发光二极管103的一侧减薄使表面平整之后，可采用溅射、电子束蒸发、离子束蒸发等工艺，在支撑层104远离所述微发光二极管103的一侧形成磁性材料层105。由于本申请中需采用磁电感应的方式对Micro-LED阵列器件进行转运，因此，所述磁性材料层的材料优选为强磁性物质，进一步的，所述磁性材料层105的材料为软磁性材料，以便被磁化后尽快去除磁性，如选用Fe、Ni、Co、Mn和Fe 3O 4中的任意一种或任意组合。
请参见图2，是本申请微发光二极管阵列器件20第二实施例的结构示意图。与第一实施例相比，区别在于：在所述支撑层104与所述磁性材料层105之间增加保护层106；所述保护层为受热后不易升华的材料， 如氧硅、氮硅等，在支撑层104上增加保护层106是为了在形成磁性材料层时阻挡形成过程中产生的冲击力，保护支撑层104不受影响，另一方面，保护层106可通过溶胶、凝胶方式形成，以此还可以增强支撑层104与磁性材料层105之间的结合力。
请参见图3，是本申请微发光二极管阵列器件第一实施例的制作方法流程示意图。所述方法包括：
步骤S1：提供生长衬底。
所述生长衬底的材料可以为常规发光二极管制作用的任意生长基板材料，如选用ZnSe、Zn0、蓝宝石(Al203)、SiC、Si、GaN、GaAs、GaP、磷化铝铟镓(Al InGaP)、铝砷化镓(AlGaAs)等材料。
步骤S2：在所述生长衬底的一侧形成粘结层。
所述粘结层用于将若干微发光二极管固定在所述生长衬底上，该粘结层的表面具有粘性与延展性。其材料可以为有机材料或无机材料等，具体地，粘结层的材料可以为环氧树脂、聚乙烯PE、聚甲基丙烯酸甲酯PMMA、紫外线固化胶、聚硅氧烷和硅氧树脂中任意一种或任意组合。并且粘结层的厚度可在1微米-几十微米级别，甚至更厚，只要能够良好的粘贴微发光二极管即可。
步骤S3：在所述粘结层上设置若干微发光二极管，形成微发光二极管阵列。
将若干个微发光二极管粘贴在粘结层上，所述微发光二极管的类型不作限制，即微发光二极管可以为蓝绿发光二极管，也可以为紫外发光二极管等，微发光二极管结构可以为水平结构的发光二极管，也可以为垂直结构的发光二极管，可以为正装结构的发光二极管，也可以为倒装结构的发光二极管。
步骤S4：在所述微发光二极管阵列上形成覆盖所述微发光二极管的支撑层。
所述支撑层采用蒸镀方式形成，其材料为升华温度为100℃～200℃的材料，如三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合，支撑层在微发光二极管转移过程中用于保护微发光二极管不受 损伤，并且在转移完成后对支撑层进行加热使其升华，从而易于清除。
步骤S5：在所述支撑层远离所述微发光二极管阵列的一侧形成磁性材料层。
具体地，为了确保磁性材料层均匀的形成在所述支撑层上，在形成磁性材料层之前可先将支撑层的一侧进行减薄，减薄的厚度可根据支撑层表面的平整度等实际进行调整。对所述支撑层远离所述微发光二极管的一侧减薄使表面平整之后，可采用溅射、电子束蒸发、离子束蒸发等工艺，在支撑层远离所述微发光二极管的一侧形成磁性材料层。由于本申请中需采用磁电感应的方式对Micro-LED阵列器件进行转运，因此，所述磁性材料层的材料优选为强磁性物质，进一步的，所述磁性材料层的材料为软磁性材料，以便被磁化后尽快去除磁性，如选用Fe、Ni、Co、Mn和Fe 3O 4中的任意一种或任意组合。
请参见图4，是本申请微发光二极管阵列器件第二实施例的制作方法流程示意图。与第一实施例制作方法的区别在于在步骤S4与S5之间还包括：
步骤S51：在所述支撑层远离所述发光二极管阵列的一侧形成保护层。
其中，所述保护层为受热后不易升华的材料，如氧硅、氮硅等，在支撑层上增加保护层是为了在低温溅射形成磁性材料层时阻挡溅射过程中产生的冲击力，保护支撑层不受影响，另一方面，增加保护层还可以增强支撑层与磁性材料层之间的结合力，所述保护层可通过溶胶、凝胶方法制备，可增加支撑层与磁性材料层之间的粘结力。
请参见图5，是本申请微发光二极管阵列器件转移装置的结构示意图。
所述微发光二极管阵列器件转移装置200包括：机械手臂109，与所述机械手臂109连接的承载板107，所述承载板107与所述机械手臂109的材料为绝缘材料；位于所述承载板107表面的若干电磁块106；位于所述承载板107内部且与所述若干电磁块106一一对应连接的若干线圈108；及位于所述承载板107内部且与所述若干线圈108连接的控 制电路110，用于控制线圈108旋转产生磁场，以使所述电磁块106产生磁性。
其中，所述电磁块106之间存在间隙，以将所述承载板107暴露出来，形成绝缘窗口，以使得每一电磁块106与一个微发光二极管对应。
请参见图6，是本申请微发光二极管阵列器件转移装置制作方法的流程示意图。
步骤S6：提供承载板。
所述承载板的材料为绝缘材料，该承载板的材料为绝缘非磁性材料，并且该承载板具有一定的刚性，在一定的受力情况下不发生形变，如玻璃或硬塑料等。
步骤S7：在所述承载板的一表面设置若干电磁块。
其中，所述电磁块之间存在间隙，以将所述承载板暴露出来，形成绝缘窗口，所述电磁块的面积比所述微发光二极管面积略大，保证对位时的准确性，防止在吸附过程中偏移位置。
步骤S8：在所述承载板内部设置与若干电磁块一一对应连接的若干线圈。
所述线圈为导电性能好的材料，如铜、铁等。
步骤S9：在所述承载板内部设置与所述若干线圈连接的控制电路。
所述控制电路可以同时控制若干线圈，使线圈产生磁场，即所有线圈对应同一控制电路，在这种情况下，该控制电路可连接所有线圈。
在一个实施例中，控制电路可以包括一电流或电压的供应源，以及一个开关电路。在工作需要吸附待转运的Micro-LED阵列器件时，只需要开启该控制电路，为所述若干线圈提供电流或电压，使所述线圈旋转产生磁场，进而使所述若干电磁块产生磁性。所述控制电路可统一由控制芯片来控制，所述控制电路集成在控制芯片上。为了确保所有电磁块的控制过程更一致，即确保所有电磁块的磁性一致，将连接所有电磁块的线圈均连接至同一个控制电路。
请参见图7，是本申请微发光二极管阵列器件转移系统的结构示意图。所述转移系统包括微发光二极管阵列器件10及转移装置200。所述 微发光二极管阵列器件10包括微发光二极管阵列100，位于所述微发光二极管阵列100上且覆盖所述微发光二极管103的支撑层104，及位于所述支撑层104远离所述微发光二极管阵列100一侧的磁性材料层105。
其中，所述支撑层104材料为升华温度为100℃～200℃的材料，如三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合，受热后易升华；所述磁性材料层105为软磁性材料，所述软磁性材料为Fe、Ni、Mn中的任意一种或任意组合。
其中，所述微发光二极管阵列100包括：生长衬底101；位于所述生长衬底101上的粘结层102；位于所述粘结层的若干微发光二极管103；所述微发光二极管103通过所述粘结层102与所述生长衬底101连接。
所述转移装置200包括：机械手臂109，与所述机械手臂109连接的承载板107，所述承载板107与所述机械手臂109的材料为绝缘材料；位于所述承载板107表面的若干电磁块106；位于所述承载板107内部且与所述若干电磁块106一一对应连接的若干线圈108；及位于所述承载板107内部且与所述若干线圈108连接的控制电路110，用于控制线圈108旋转产生磁场，以使所述电磁块106产生磁性。
其中，所述电磁块106之间存在间隙，以将所述承载板107暴露出来，形成绝缘窗口。
所述控制电路110通电，使所述线圈108旋转产生磁场，所述电磁块106在线圈108的磁场感应下产生磁性，用以与所述微发光二极管阵列上的磁性材料层105产生磁力，将所述微发光二极管阵列100上的每一微发光二极管吸附，以转移到接收基板对应的接收区域。
需要说明的是，所述电磁块106与所述磁性材料层105之间的磁力大于所述微发光二极管103与所述生长衬底101之间粘结层102的粘力。
请参见图8，是本申请微发光二极管阵列器件的转移方法的第一实施例的流程示意图。
步骤S201：将转移装置移动至微发光二极管阵列器件上方。
在机械手臂的控制下将所述Micro-LED阵列器件转移装置移动至 所述Micro-LED阵列器件上方。如以上实施例中所述的结构，该转移装置包括若干个拾取单元，一个拾取单元包括一个线圈以及与所述线圈连接的一个电磁块、一个绝缘窗口；一个拾取单元还包括控制所述拾取单元的控制电路，对于本实施例，所述的拾取单元整体由同一个控制电路控制。
步骤S202：将所述转移装置上的每一电磁块与所述微发光二极管阵列器件上的每一发光二极管对准。
具体地，将所述转移装置上的每一电磁块与所述微发光二极管阵列器件上的每一发光二极管一一对准的方式为：将该拾取装置在平行于所述接收基板的平面内进行水平移动，以使所述电磁块与所述Micro-LED阵列器件上的磁性材料层一一对准。在对准过程中，由于转移装置中控制电路还未通电，此时电磁块还处于没有磁性状态，因此在对准过程中电磁块与所述Micro-LED阵列器件上的磁性材料层可直接接触，以提高对准效果的准确度。
步骤S203：开启所述转移装置中的控制电路。
开启所述控制电路，使线圈高速旋转产生磁场，并使与所述线圈对应连接的电磁块产生磁性。
步骤S204：控制所述转移装置中的线圈通电产生磁场以使每一电磁块产生磁性，吸附Micro-LED阵列器件上方覆盖的所述支撑层上的磁性材料层。
具体地，转移装置中电磁块产生的磁性与所述磁性材料层之间的磁力大于所述微发光二极管与生长衬底之间粘结层的粘力，以使微发光二极管脱离生长衬底。
步骤S205：将吸附有所述微发光二极管的转移装置移动至接收基板上方。
在机械手臂的控制下将所述转移装置移动至所述接收基板上方。
步骤S206：将转移装置上的所述微发光二极管对准所述接收基板上的接收区域。
机械手臂控制所述微发光二极管转移装置轻微移动，以使所述转移 装置与所述接收基板的接收区域对准。
步骤S207：将所述微发光二极管放置在所述接收基板上的接收区域。
控制机械手臂轻微移动，将所述微发光二极管放置在所述接收基板上的接收区域，放置时防止用力过猛而损坏微发光二极管。
步骤S2071：对所述微发光二极管进行加热使所述支撑层升华。
可直接对所述微发光二极管进行加热，所述支撑层的材料为升华温度为100℃～200℃的材料，如三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合，在温度达到升华温度时，所述支撑层升华。
步骤S2072：通过所述转移装置中的电磁块将所述微发光二极管上方的磁性材料层与保护层吸走。
所述支撑层升华为气体去除后，所述磁性材料层覆盖在所述保护层上方，并粘结在保护层上，所述磁性材料层与所述保护层之间的粘结力大于所述电磁块与所述磁性材料层之间的磁力，可直接通过电磁块的磁力将磁性材料层与保护层吸走清除。
步骤S2073：关闭所述控制电路。
其中，关闭所述控制电路，卸载所述电磁块上的磁场，所述电磁块失去磁性。
请参见图9，是本申请微发光二极管阵列器件的转移方法的第二实施例的流程示意图。所述第二实施例与上述第一实施例(如图6所示)相比，区别在于：
步骤2081：关闭所述转移装置中的控制电路。
其中，关闭所述控制电路，卸载所述电磁块上的磁场，所述电磁块失去磁性。
步骤2082：对所述微发光二极管进行加热使所述支撑层升华。
对所述微发光二极管进行加热，以使所述微发光二极管上方的支撑层升华，所述支撑层的材料为升华温度为100℃～200℃的材料，如三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合，当加热温度达到100℃时，所述支撑层就会升华为气体去除。
步骤2083：清洗所述微发光二极管以去除磁性材料层与保护层。
所述支撑层升华为气体去除后，所述磁性材料层粘结在所述保护层上并散落在所述微发光二极管上，此时可直接用清水清洗即可去除所述磁性材料层。
本申请的Micro-LED阵列器件、制作方法及转移方法通过在所述Micro-LED上方形成支撑层，并在所述支撑层远离所述Micro-LED阵列一侧形成保护层及磁性材料层，并在转移装置上设置电磁块、线圈和控制电路，通过控制电路使电磁块产生磁性吸附磁性材料层完成转移，并在转移之后通过加热使支撑层升华以此去除支撑层与磁性材料层，所述磁性材料层为软磁性材料，以便被磁化后尽快去除磁性，如选用Fe、Ni、Co、Mn和Fe 3O 4中的任意一种或任意组合，所述支撑层的材料为升华温度为100℃～200℃的材料，如三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合，当加热温度达到100℃时，所述支撑层就会升华为气体去除，可保护Micro-LED阵列器件表面不受损害。
在本实施例中，所述微发光二极管阵列只描述了部分相关结构及功能，其他结构及功能与现有技术中的微发光二极管阵列的结构及功能相同，在此不再赘述。
以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (17)

  1. 一种微发光二极管阵列器件，其中，包括：
    微发光二极管阵列；
    位于所述微发光二极管阵列上且覆盖所述微发光二极管的支撑层，所述支撑层为受热后易升华材料；及
    位于所述支撑层远离所述微发光二极管阵列一侧的磁性材料层。
  2. 根据权利要求1所述的微发光二极管阵列器件，其中，所述微发光二极管阵列器件还包括：
    位于所述支撑层与所述磁性材料层之间的保护层，用于阻挡磁性材料层在形成过程中对所述支撑层的冲击。
  3. 根据权利要求2所述的微发光二极管阵列器件，其中，所述保护层的材料为氧硅、氮硅中任意一种或任意组合。
  4. 根据权利要求1所述的微发光二极管阵列器件，其中，所述支撑层材料为升华温度为100℃～200℃的材料。
  5. 根据权利要求1所述的微发光二极管阵列器件，其中，所述磁性材料层为软磁性材料。
  6. 根据权利要求5所述的微发光二极管阵列器件，其中，所述软磁性材料为Fe、Ni、Mn中的任意一种或任意组合。
  7. 根据权利要求1所述的微发光二极管阵列器件，其中，所述支撑层材料为三羟甲基乙烷、蒽、芘、菲、并四苯、并五苯中的任意一种或组合。
  8. 根据权利要求1所述的微发光二极管阵列器件，其中，所述微发光二极管阵列包括：
    生长衬底；
    位于所述生长衬底上的粘结层；
    位于所述粘结层上的若干微发光二极管，所述微发光二极管通过所述粘结层与所述生长衬底连接。
  9. 一种转移装置，其中，包括：
    承载板；
    位于所述承载板表面的若干电磁块；
    位于所述承载板内且与所述若干电磁快一一对应连接的若干线圈；及
    与所述若干线圈连接的控制电路，用于控制所述线圈通电产生磁场。
  10. 根据权利要求9所述的转移装置，其中，还包括：
    机械手臂，连接所述承载板，用于控制所述转移装置移动。
  11. 根据权利要求10所述的转移装置，其中，
    所述机械手臂与所述承载板为绝缘材料。
  12. 根据权利要求9所述的转移装置，其中，
    所述若干电磁块之间存在间隙，以形成绝缘窗口，用于在对微发光二极管阵列器件转移时使所述电磁块与所述微发光二极管一一对应。
  13. 根据权利要求9所述的转移装置，其中，
    所述线圈为导电性能好的材料，所述线圈为铜、铁等中一种或组合。
  14. 根据权利要求9所述的转移装置，其中，
    所述电磁块的面积大于所述微发光二极管的面积。
  15. 一种微发光二极管阵列器件转移方法，其中，所述方法包括：
    提供一种转移装置；
    将转移装置移动至微发光二极管阵列器件上方；
    将所述转移装置与所述微发光二极管阵列器件上的发光二极管对准；
    开启所述转移装置；
    控制所述转移装置通电产生磁性吸附微发光二极管的磁性材料；
    将吸附有所述微发光二极管阵列器件的转移装置移动至接收基板上方；
    将所述微发光二极管阵列器件对准所述接收基板上的接收区域；及
    将所述微发光二极管阵列器件放置在所述接收基板的接收区域。
  16. 根据权利要求15所述的微发光二极管阵列器件转移方法，其中，所述微发光二极管阵列器件放置在所述接收基板的接收区域之后还 包括：
    对所述微发光二极管阵列器件进行加热使所述支撑层升华；
    通过所述转移装置中的电磁块将所述微发光二极管上方的磁性材料与保护层吸走；
    关闭所述控制电路。
  17. 根据权利要求15所述的微发光二极管阵列器件转移方法，其中，关闭所述转移装置中的控制电路；
    对所述微发光二极管阵列器件进行加热使所述支撑层升华；
    清洗所述微发光二极管以去除保护层与磁性材料层。
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