CN110573647B - 蒸发源和成膜装置 - Google Patents
蒸发源和成膜装置 Download PDFInfo
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- CN110573647B CN110573647B CN201880027546.2A CN201880027546A CN110573647B CN 110573647 B CN110573647 B CN 110573647B CN 201880027546 A CN201880027546 A CN 201880027546A CN 110573647 B CN110573647 B CN 110573647B
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- evaporation source
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- nozzle
- opening
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- 230000008020 evaporation Effects 0.000 title claims abstract description 167
- 238000001704 evaporation Methods 0.000 title claims abstract description 167
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 46
- 239000000126 substance Substances 0.000 claims abstract description 16
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 75
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 239000000758 substrate Substances 0.000 description 44
- 238000001816 cooling Methods 0.000 description 41
- 239000011521 glass Substances 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000011364 vaporized material Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 229910001026 inconel Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-087570 | 2017-04-26 | ||
| JP2017087570 | 2017-04-26 | ||
| PCT/JP2018/016861 WO2018199184A1 (ja) | 2017-04-26 | 2018-04-25 | 蒸発源及び成膜装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110573647A CN110573647A (zh) | 2019-12-13 |
| CN110573647B true CN110573647B (zh) | 2021-10-08 |
Family
ID=63919863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880027546.2A Active CN110573647B (zh) | 2017-04-26 | 2018-04-25 | 蒸发源和成膜装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6586535B2 (ja) |
| KR (1) | KR102234985B1 (ja) |
| CN (1) | CN110573647B (ja) |
| WO (1) | WO2018199184A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3899085A1 (en) * | 2018-12-21 | 2021-10-27 | Applied Materials, Inc. | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
| CN109652773B (zh) * | 2019-02-25 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种防着组件以及蒸镀设备 |
| JP2020132985A (ja) * | 2019-02-25 | 2020-08-31 | 株式会社アルバック | 真空処理装置及び真空処理方法 |
| CN110499492A (zh) * | 2019-09-19 | 2019-11-26 | 京东方科技集团股份有限公司 | 一种蒸镀装置及其蒸镀方法 |
| CN115522167A (zh) * | 2022-09-22 | 2022-12-27 | 京东方科技集团股份有限公司 | 一种蒸镀源设备 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2381011B1 (en) * | 2003-08-04 | 2012-12-05 | LG Display Co., Ltd. | Evaporation source for evaporating an organic electroluminescent layer |
| WO2009034916A1 (ja) * | 2007-09-10 | 2009-03-19 | Ulvac, Inc. | 蒸気放出装置、有機薄膜蒸着装置及び有機薄膜蒸着方法 |
| WO2009060739A1 (ja) * | 2007-11-05 | 2009-05-14 | Ulvac, Inc. | 蒸着源、有機ｅｌ素子の製造装置 |
| JP5244723B2 (ja) * | 2009-07-10 | 2013-07-24 | 株式会社日立ハイテクノロジーズ | 成膜装置 |
| KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
| JP5492120B2 (ja) * | 2011-03-08 | 2014-05-14 | 株式会社日立ハイテクノロジーズ | 蒸発源および蒸着装置 |
| JP2012207263A (ja) * | 2011-03-29 | 2012-10-25 | Hitachi High-Technologies Corp | 蒸着方法および蒸着装置 |
| JP5520871B2 (ja) * | 2011-03-31 | 2014-06-11 | 株式会社日立ハイテクノロジーズ | 蒸着装置 |
| CN103080366B (zh) * | 2011-06-29 | 2014-12-24 | 松下电器产业株式会社 | 加热装置、真空加热方法和薄膜制造方法 |
| JP2013211138A (ja) * | 2012-03-30 | 2013-10-10 | Hitachi High-Technologies Corp | 蒸発源、及びそれを用いた真空蒸着装置 |
| JP2013211137A (ja) * | 2012-03-30 | 2013-10-10 | Samsung Display Co Ltd | 真空蒸着方法及びその装置 |
| JP2014047382A (ja) * | 2012-08-30 | 2014-03-17 | Canon Tokki Corp | 蒸発源 |
| JP2014072005A (ja) * | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | 蒸発源、真空蒸着装置及び有機ｅｌ表示装置製造方法 |
| JP2015067847A (ja) * | 2013-09-27 | 2015-04-13 | 株式会社日立ハイテクファインシステムズ | 真空蒸着装置 |
| KR102386658B1 (ko) * | 2015-08-03 | 2022-04-14 | 삼성디스플레이 주식회사 | 증착원 |
| JP6595568B2 (ja) * | 2017-12-12 | 2019-10-23 | キヤノントッキ株式会社 | 蒸発源装置及び蒸着装置 |
-
2018
- 2018-04-25 WO PCT/JP2018/016861 patent/WO2018199184A1/ja active Application Filing
- 2018-04-25 JP JP2018558778A patent/JP6586535B2/ja active Active
- 2018-04-25 CN CN201880027546.2A patent/CN110573647B/zh active Active
- 2018-04-25 KR KR1020197032455A patent/KR102234985B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN110573647A (zh) | 2019-12-13 |
| KR102234985B1 (ko) | 2021-04-01 |
| KR20190132683A (ko) | 2019-11-28 |
| JP6586535B2 (ja) | 2019-10-02 |
| WO2018199184A1 (ja) | 2018-11-01 |
| JPWO2018199184A1 (ja) | 2019-06-27 |
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| GR01 | Patent grant |