WO2009060739A1 - 蒸着源、有機ｅｌ素子の製造装置 - Google Patents

蒸着源、有機ｅｌ素子の製造装置 Download PDF

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Publication number
WO2009060739A1
WO2009060739A1 PCT/JP2008/069416 JP2008069416W WO2009060739A1 WO 2009060739 A1 WO2009060739 A1 WO 2009060739A1 JP 2008069416 W JP2008069416 W JP 2008069416W WO 2009060739 A1 WO2009060739 A1 WO 2009060739A1
Authority
WO
WIPO (PCT)
Prior art keywords
evaporation
vacuum
evaporation source
heat
heater wire
Prior art date
Application number
PCT/JP2008/069416
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English (en)
French (fr)
Inventor
Junichi Nagata
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to JP2009540015A priority Critical patent/JP5150641B2/ja
Priority to DE112008002971T priority patent/DE112008002971T5/de
Priority to KR1020107009188A priority patent/KR101181680B1/ko
Priority to CN2008801144826A priority patent/CN101849032B/zh
Publication of WO2009060739A1 publication Critical patent/WO2009060739A1/ja
Priority to US12/768,229 priority patent/US20100269755A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　蒸着源の蒸発容器９の熱制御性を良くする。本発明の蒸着源３は、有機材料２１が配置される蒸発容器９を有し、蒸着源３の外周にヒータ線１８が巻回されている。有機材料２１の蒸発容器９の側壁と接触する部分がヒータ線１８の下端より下になるように配置し、基板ホルダ４に基板２０を取り付ける。電源７を起動し、ヒータ線１８を発熱させ、蒸発容器９を加熱すると、有機材料２１の蒸気は上方を向いた貫通孔３１から真空槽２内部へ放出され、基板２０に付着し、薄膜が形成される。ヒータ線１８を蒸発容器９の上端まで配置したので、開口を蒸発温度以上に昇温させることができ、前記蒸発容器９は、銅、銅・ベリリウム合金、Ｔｉ又はＴａのいずれか一種の金属材料から成り、側壁と底壁が０．３ｍｍ以上０．７ｍｍ以下の厚みに成形されているため、熱容量が小さく、制御性がよい。
PCT/JP2008/069416 2007-11-05 2008-10-27 蒸着源、有機ｅｌ素子の製造装置 WO2009060739A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009540015A JP5150641B2 (ja) 2007-11-05 2008-10-27 蒸着源、有機ｅｌ素子の製造装置
DE112008002971T DE112008002971T5 (de) 2007-11-05 2008-10-27 Bedampfungsquellen und Vorrichtung zum Herstellen eines organischen EL-Elements
KR1020107009188A KR101181680B1 (ko) 2007-11-05 2008-10-27 증착원, 유기 ｅｌ 소자의 제조 장치
CN2008801144826A CN101849032B (zh) 2007-11-05 2008-10-27 蒸镀源、有机el元件的制造装置
US12/768,229 US20100269755A1 (en) 2007-11-05 2010-04-27 Vapor deposition source and apparatus for producing organic el element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007287111 2007-11-05
JP2007-287111 2007-11-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/768,229 Continuation US20100269755A1 (en) 2007-11-05 2010-04-27 Vapor deposition source and apparatus for producing organic el element

Publications (1)

Publication Number Publication Date
WO2009060739A1 true WO2009060739A1 (ja) 2009-05-14

Family

ID=40625635

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069416 WO2009060739A1 (ja) 2007-11-05 2008-10-27 蒸着源、有機ｅｌ素子の製造装置

Country Status (7)

Country Link
US (1) US20100269755A1 (ja)
JP (1) JP5150641B2 (ja)
KR (1) KR101181680B1 (ja)
CN (1) CN101849032B (ja)
DE (1) DE112008002971T5 (ja)
TW (1) TWI409350B (ja)
WO (1) WO2009060739A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102312198A (zh) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 一种蒸镀源及蒸镀镀膜装置
JP2012057235A (ja) * 2010-09-13 2012-03-22 Hitachi Zosen Corp 真空蒸着装置
WO2014027578A1 (ja) * 2012-08-13 2014-02-20 株式会社カネカ 真空蒸着装置及び有機ｅｌ装置の製造方法
JP2016160481A (ja) * 2015-02-28 2016-09-05 国立大学法人 奈良先端科学技術大学院大学 蒸着セル、薄膜作製装置および薄膜作製方法
JP2021183714A (ja) * 2020-05-22 2021-12-02 株式会社アルバック 真空蒸着装置用の蒸着源
WO2024201548A1 (ja) * 2023-03-24 2024-10-03 シャープディスプレイテクノロジー株式会社 蒸着装置、表示装置の製造方法

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KR101218262B1 (ko) * 2010-12-01 2013-01-03 (주)알파플러스 증발원 장치
JP6223675B2 (ja) * 2012-11-29 2017-11-01 株式会社オプトラン 真空蒸着源及びそれを用いた真空蒸着方法
CN104178750A (zh) * 2013-05-21 2014-12-03 常州碳维纳米科技有限公司 一种悬挂式加热系统
KR102334408B1 (ko) 2015-04-10 2021-12-03 삼성디스플레이 주식회사 증착 장치
KR102495561B1 (ko) * 2015-11-20 2023-02-02 엘지디스플레이 주식회사 유기 발광 다이오드 제조용 도가니 및 그 세정 방법
CN106929802B (zh) * 2015-12-31 2021-06-04 中国建材国际工程集团有限公司 用于加热坩埚的加热器设备和用于蒸发或升华材料的系统
WO2018199184A1 (ja) * 2017-04-26 2018-11-01 株式会社アルバック 蒸発源及び成膜装置
CN112359323B (zh) * 2020-10-28 2021-07-23 广西贝驰汽车科技有限公司 一种金属薄板表面处理用连续式真空镀膜装置
KR102506553B1 (ko) * 2020-12-30 2023-03-07 주식회사 에스에프에이 증발원 및 이를 포함하는 기판 처리 장치
CN115679267B (zh) * 2022-11-15 2024-09-24 合肥欣奕华智能机器股份有限公司 一种新型oled蒸镀点源

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JP2005060757A (ja) * 2003-08-11 2005-03-10 Ulvac Japan Ltd 成膜装置、及び成膜方法
JP2006009134A (ja) * 2003-07-31 2006-01-12 Semiconductor Energy Lab Co Ltd 製造装置
JP2007046100A (ja) * 2005-08-09 2007-02-22 Sony Corp 蒸着装置、および表示装置の製造システム

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JP2006009134A (ja) * 2003-07-31 2006-01-12 Semiconductor Energy Lab Co Ltd 製造装置
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JP2007046100A (ja) * 2005-08-09 2007-02-22 Sony Corp 蒸着装置、および表示装置の製造システム

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102312198A (zh) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 一种蒸镀源及蒸镀镀膜装置
JP2012057235A (ja) * 2010-09-13 2012-03-22 Hitachi Zosen Corp 真空蒸着装置
WO2014027578A1 (ja) * 2012-08-13 2014-02-20 株式会社カネカ 真空蒸着装置及び有機ｅｌ装置の製造方法
JPWO2014027578A1 (ja) * 2012-08-13 2016-07-25 株式会社カネカ 真空蒸着装置及び有機ｅｌ装置の製造方法
US9496527B2 (en) 2012-08-13 2016-11-15 Kaneka Corporation Vacuum deposition device and method of manufacturing organic EL device
JP2016160481A (ja) * 2015-02-28 2016-09-05 国立大学法人 奈良先端科学技術大学院大学 蒸着セル、薄膜作製装置および薄膜作製方法
JP2021183714A (ja) * 2020-05-22 2021-12-02 株式会社アルバック 真空蒸着装置用の蒸着源
JP7376426B2 (ja) 2020-05-22 2023-11-08 株式会社アルバック 真空蒸着装置用の蒸着源
WO2024201548A1 (ja) * 2023-03-24 2024-10-03 シャープディスプレイテクノロジー株式会社 蒸着装置、表示装置の製造方法

Also Published As

Publication number Publication date
JPWO2009060739A1 (ja) 2011-03-24
US20100269755A1 (en) 2010-10-28
TWI409350B (zh) 2013-09-21
CN101849032B (zh) 2013-05-01
DE112008002971T5 (de) 2010-09-23
KR101181680B1 (ko) 2012-09-19
TW200932931A (en) 2009-08-01
CN101849032A (zh) 2010-09-29
JP5150641B2 (ja) 2013-02-20
KR20100063131A (ko) 2010-06-10

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