CN110373653B - 具有多区域引射器块的化学气相沉积设备 - Google Patents

具有多区域引射器块的化学气相沉积设备 Download PDF

Info

Publication number
CN110373653B
CN110373653B CN201910300090.9A CN201910300090A CN110373653B CN 110373653 B CN110373653 B CN 110373653B CN 201910300090 A CN201910300090 A CN 201910300090A CN 110373653 B CN110373653 B CN 110373653B
Authority
CN
China
Prior art keywords
reactant gas
region
reactant
zone
gas distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910300090.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN110373653A (zh
Inventor
B·米特洛夫克
I·昆奇
J·伽玛拉
曼德尔·德什潘德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Publication of CN110373653A publication Critical patent/CN110373653A/zh
Application granted granted Critical
Publication of CN110373653B publication Critical patent/CN110373653B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
CN201910300090.9A 2018-04-13 2019-04-15 具有多区域引射器块的化学气相沉积设备 Active CN110373653B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862657255P 2018-04-13 2018-04-13
US62/657,255 2018-04-13

Publications (2)

Publication Number Publication Date
CN110373653A CN110373653A (zh) 2019-10-25
CN110373653B true CN110373653B (zh) 2023-12-01

Family

ID=68161466

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910300090.9A Active CN110373653B (zh) 2018-04-13 2019-04-15 具有多区域引射器块的化学气相沉积设备
CN201920505560.0U Active CN210030883U (zh) 2018-04-13 2019-04-15 具有多区域引射器块的化学气相沉积设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201920505560.0U Active CN210030883U (zh) 2018-04-13 2019-04-15 具有多区域引射器块的化学气相沉积设备

Country Status (6)

Country Link
US (1) US12584223B2 (https=)
JP (1) JP7495882B2 (https=)
CN (2) CN110373653B (https=)
DE (1) DE112019001953T5 (https=)
TW (2) TWM597506U (https=)
WO (1) WO2019200312A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7256135B2 (ja) * 2017-06-23 2023-04-11 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 選択的な膜成長のための原子層堆積の方法
DE112019001953T5 (de) * 2018-04-13 2021-01-21 Veeco Instruments Inc. Vorrichtung zur chemischen gasphasenabscheidung mit mehrzonen-injektorblock
US11225716B2 (en) * 2019-11-27 2022-01-18 Tokyo Electron Limited Internally cooled multi-hole injectors for delivery of process chemicals

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6800139B1 (en) * 1999-08-31 2004-10-05 Tokyo Electron Limited Film deposition apparatus and method
CN105441904A (zh) * 2014-06-18 2016-03-30 中微半导体设备(上海)有限公司 气体喷淋装置、化学气相沉积装置和方法
CN106906453A (zh) * 2015-12-14 2017-06-30 朗姆研究公司 喷头组件
CN210030883U (zh) * 2018-04-13 2020-02-07 维高仪器股份有限公司 具有多区域引射器块的化学气相沉积设备

Family Cites Families (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156090A (en) 1961-09-18 1964-11-10 Harold R Kaufman Ion rocket
DE1901037A1 (de) 1969-01-07 1971-02-25 Schmidt & Haensch Franz Lichtelektrisches Farbpyrometer
US3913320A (en) 1974-11-13 1975-10-21 Ion Tech Inc Electron-bombardment ion sources
US4565618A (en) 1983-05-17 1986-01-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Apparatus for producing diamondlike carbon flakes
US4929322A (en) 1985-09-30 1990-05-29 Union Carbide Corporation Apparatus and process for arc vapor depositing a coating in an evacuated chamber
US4783593A (en) 1985-12-26 1988-11-08 General Electric Company Optical system for wide angle IR imager
US4708493A (en) 1986-05-19 1987-11-24 Quantum Logic Corporation Apparatus for remote measurement of temperatures
JPH07104210B2 (ja) 1987-03-27 1995-11-13 ミノルタ株式会社 放射温度計
US4873467A (en) 1988-05-23 1989-10-10 Kaufman Harold R Ion source with particular grid assembly
ES2214498T3 (es) 1994-04-25 2004-09-16 The Gillette Company Procedimiento para recubrir cuchillas con una capa de diamante amorfo.
US5433386A (en) 1994-06-24 1995-07-18 Siemens Automotive L.P. Fuel injector having an adjustment tube that discourages support for a vapor bubble dome
KR960010901A (ko) 1994-09-30 1996-04-20 김광호 고체 유기화합물 전용 버블러 장치
GB9503305D0 (en) 1995-02-20 1995-04-12 Univ Nanyang Filtered cathodic arc source
US5545252A (en) 1995-03-01 1996-08-13 The Perkin-Elmer Corporation Flow regulation in gas chromatograph
US5673562A (en) 1996-02-23 1997-10-07 L'air Liquide, S.A. Bulk delivery of ultra-high purity gases at high flow rates
US6042900A (en) 1996-03-12 2000-03-28 Alexander Rakhimov CVD method for forming diamond films
GB9615548D0 (en) 1996-07-24 1996-09-04 Univ Nanyang Cathode arc source and graphite target
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US5759281A (en) 1997-06-30 1998-06-02 Emcore Corporation CVD reactor for uniform heating with radiant heating filaments
JPH1154496A (ja) 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
GB9722650D0 (en) 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source with target feeding apparatus
US6116080A (en) 1998-04-17 2000-09-12 Lorex Industries, Inc. Apparatus and methods for performing acoustical measurements
US6423613B1 (en) 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
CA2256847A1 (en) 1998-12-22 2000-06-22 Munther Kandah Particle-free cathodic arc carbon ion source
US6464891B1 (en) 1999-03-17 2002-10-15 Veeco Instruments, Inc. Method for repetitive ion beam processing with a carbon containing ion beam
US6231933B1 (en) 1999-03-18 2001-05-15 Primaxx, Inc. Method and apparatus for metal oxide chemical vapor deposition on a substrate surface
US6548817B1 (en) 1999-03-31 2003-04-15 The Regents Of The University Of California Miniaturized cathodic arc plasma source
US6465793B1 (en) 1999-03-31 2002-10-15 The Regents Of The University Of California Arc initiation in cathodic arc plasma sources
US6465780B1 (en) 1999-03-31 2002-10-15 The Regents Of The University Of California Filters for cathodic arc plasmas
JP2001127169A (ja) 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002110567A (ja) 2000-10-03 2002-04-12 Mitsubishi Electric Corp 化学気相成長装置および該装置による半導体ウエハの成膜方法
JP4694768B2 (ja) 2001-01-04 2011-06-08 レーザー・イメージング・システムズ・ゲーエムベーハー・ウント・カンパニー・カーゲー 直接パターンライター
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
JP3611796B2 (ja) 2001-02-28 2005-01-19 松下電器産業株式会社 超音波送受波器、超音波送受波器の製造方法及び超音波流量計
US6902623B2 (en) 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
WO2003029516A1 (en) 2001-09-29 2003-04-10 Cree, Inc. Apparatus for inverted cvd
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
AU2002366943A1 (en) * 2001-12-20 2003-07-09 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030173870A1 (en) 2002-03-12 2003-09-18 Shuh-Yueh Simon Hsu Piezoelectric ultrasound transducer assembly having internal electrodes for bandwidth enhancement and mode suppression
US7734439B2 (en) 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6786035B2 (en) 2002-07-22 2004-09-07 The Boeing Company Ion thruster grid clear
US6812648B2 (en) 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
US7557362B2 (en) 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US8366830B2 (en) 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
WO2004088729A1 (en) 2003-03-26 2004-10-14 Tokyo Electron Limited Chemical processing system and method
KR100513920B1 (ko) * 2003-10-31 2005-09-08 주식회사 시스넥스 화학기상증착 반응기
US6895825B1 (en) 2004-01-29 2005-05-24 The Boeing Company Ultrasonic transducer assembly for monitoring a fluid flowing through a duct
US7570368B2 (en) 2004-05-12 2009-08-04 Veeco Instruments Inc. Method and apparatus for measuring the curvature of reflective surfaces
WO2005113857A1 (en) 2004-05-20 2005-12-01 Akzo Nobel N.V. Bubbler for constant vapor delivery of a solid chemical
US7666323B2 (en) 2004-06-09 2010-02-23 Veeco Instruments Inc. System and method for increasing the emissivity of a material
KR101309334B1 (ko) 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
JP4542860B2 (ja) 2004-10-04 2010-09-15 大陽日酸株式会社 気相成長装置
WO2006124055A2 (en) 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
DE102004053659B3 (de) 2004-11-03 2006-04-13 My Optical Systems Gmbh Verfahren und Vorrichtung zur berührungslosen Erfassung von thermischen Eigenschaften einer Objektoberfläche
JP4652822B2 (ja) 2005-01-07 2011-03-16 学校法人同志社 熱音響装置
US20060196417A1 (en) * 2005-03-03 2006-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Gas distribution systems for deposition processes
WO2007008792A2 (en) 2005-07-08 2007-01-18 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
CN100358097C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺处理系统及其处理方法
CN103736165B (zh) 2006-02-09 2017-05-10 德卡产品有限公司 流体分配器件、流体流的测量方法和系统及流体输送系统
US8603248B2 (en) 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
US20080078746A1 (en) * 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
KR101464228B1 (ko) 2007-01-12 2014-11-21 비코 인스트루먼츠 인코포레이티드 가스 처리 시스템
US7718554B2 (en) 2007-02-09 2010-05-18 Wafermasters, Inc. Focused laser beam processing
DE102007009145A1 (de) 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE
JP5063143B2 (ja) 2007-03-02 2012-10-31 株式会社リケン アーク式蒸発源
PL2720248T3 (pl) 2007-04-17 2018-01-31 Oerlikon Surface Solutions Ag Pfaeffikon Źródło próżniowego odparowania łukowego, a także komora odparowania łukowego ze źródłem próżniowego odparowania łukowego
KR100924287B1 (ko) 2007-05-10 2009-10-30 한국과학기술연구원 양광주가 존재하지 않는 직류 전원 플라스마 증착 장치와,양광주를 배제한 상태에서의 물질 증착 방법 및 이에 의해제조된 다이아몬드 박막
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US8092599B2 (en) 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
JP5039076B2 (ja) 2008-03-24 2012-10-03 株式会社東芝 エピタキシャルウェーハの製造装置及び製造方法
WO2010042883A2 (en) 2008-10-10 2010-04-15 Alta Devices, Inc. Concentric showerhead for vapor deposition
US8895107B2 (en) 2008-11-06 2014-11-25 Veeco Instruments Inc. Chemical vapor deposition with elevated temperature gas injection
CN103352206B (zh) 2008-12-04 2015-09-16 威科仪器有限公司 用于化学气相沉积的进气口元件及其制造方法
CN102308358B (zh) 2008-12-08 2015-01-07 通用等离子公司 具有自清洁阳极的闭合漂移磁场离子源装置及基材改性修改方法
EP2252077B1 (en) 2009-05-11 2012-07-11 STMicroelectronics Srl Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
JP5436043B2 (ja) 2009-05-22 2014-03-05 大陽日酸株式会社 気相成長装置
JP5324347B2 (ja) 2009-07-15 2013-10-23 大陽日酸イー・エム・シー株式会社 気相成長装置
KR101245769B1 (ko) 2009-07-28 2013-03-20 엘아이지에이디피 주식회사 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법
JP2011132078A (ja) 2009-12-25 2011-07-07 One Shot Sound:Kk カーボンナノ粒子の製造装置
US8535445B2 (en) 2010-08-13 2013-09-17 Veeco Instruments Inc. Enhanced wafer carrier
TW201237994A (en) * 2010-12-20 2012-09-16 Novellus Systems Inc System and apparatus for flowable deposition in semiconductor fabrication
US8888360B2 (en) 2010-12-30 2014-11-18 Veeco Instruments Inc. Methods and systems for in-situ pyrometer calibration
KR101855217B1 (ko) 2010-12-30 2018-05-08 비코 인스트루먼츠 인코포레이티드 캐리어 연장부를 이용한 웨이퍼 처리
KR20140005165A (ko) 2011-03-09 2014-01-14 다이요 닛산 가부시키가이샤 기상성장장치
JP5791329B2 (ja) 2011-03-31 2015-10-07 大陽日酸株式会社 気相成長装置
DE102011056589A1 (de) 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
DE102011055061A1 (de) 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
US20130177706A1 (en) 2012-01-09 2013-07-11 Sanjeev Baluja Method for seasoning uv chamber optical components to avoid degradation
US9019584B2 (en) 2012-03-12 2015-04-28 Empire Technology Development Llc Holographic image reproduction mechanism using ultraviolet light
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier
CN105274498B (zh) 2012-05-11 2017-10-27 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
KR101710770B1 (ko) 2012-05-18 2017-02-27 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착을 위한 페로플루이드 밀봉부를 갖는 회전 디스크 리액터
US9085824B2 (en) 2012-06-22 2015-07-21 Veeco Instruments, Inc. Control of stray radiation in a CVD chamber
US9448119B2 (en) 2012-06-22 2016-09-20 Veeco Instruments Inc. Radiation thermometer using off-focus telecentric optics
US9447499B2 (en) * 2012-06-22 2016-09-20 Novellus Systems, Inc. Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
US9804126B2 (en) 2012-09-04 2017-10-31 Veeco Instruments Inc. Apparatus and method for improved acoustical transformation
US9038364B2 (en) 2012-10-18 2015-05-26 The Boeing Company Thruster grid clear circuits and methods to clear thruster grids
WO2014117255A1 (en) 2013-02-01 2014-08-07 Masdar Institute Of Science And Technology Novel in-situ membrane cleaning using periodic electrolysis
DE102013101534A1 (de) * 2013-02-15 2014-08-21 Aixtron Se Gasverteiler für einen CVD-Reaktor
WO2014159427A1 (en) 2013-03-14 2014-10-02 Applied Materials, Inc Resist hardening and development processes for semiconductor device manufacturing
US20140284404A1 (en) 2013-03-20 2014-09-25 Asm Technology Singapore Pte Ltd. Chemical vapour deposition injector
CN103346080A (zh) 2013-07-09 2013-10-09 上海华力微电子有限公司 减少金属硅化物掩模层缺陷的方法
US20150064361A1 (en) 2013-09-04 2015-03-05 Intermolecular Inc. UV treatment for ALD film densification
US9058980B1 (en) 2013-12-05 2015-06-16 Applied Materials, Inc. UV-assisted photochemical vapor deposition for damaged low K films pore sealing
JP5837962B1 (ja) * 2014-07-08 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびガス整流部
CN106796200B (zh) 2014-08-11 2019-10-25 威科仪器有限公司 用于声波气体浓度感测以及流量控制的增强型罩壳
WO2016099572A1 (en) 2014-12-20 2016-06-23 Intel Corporation Solder contacts for socket assemblies
US9748113B2 (en) 2015-07-30 2017-08-29 Veeco Intruments Inc. Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
DE102017203255B4 (de) 2016-03-02 2024-06-13 Veeco Instruments Inc. Reaktor zur Verwendung bei einem System einer chemischen Dampfabscheidung und Verfahren zum Betreiben eines Systems einer chemischen Dampfabscheidung
US10571430B2 (en) 2016-03-14 2020-02-25 Veeco Instruments Inc. Gas concentration sensors and systems
CN105704903B (zh) 2016-03-16 2019-03-05 北京交通大学 一种基于磁场作用的真空等离子体生成的放电电极结构
WO2017196622A2 (en) 2016-05-11 2017-11-16 Veeco Instruments Inc. Ion beam materials processing system with grid short clearing system for gridded ion beam source
SG10201705059TA (en) 2016-06-24 2018-01-30 Veeco Instr Inc Enhanced cathodic arc source for arc plasma deposition
US12104242B2 (en) 2019-05-10 2024-10-01 Veeco Instruments Inc. Deposition system with integrated carrier cleaning modules

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6800139B1 (en) * 1999-08-31 2004-10-05 Tokyo Electron Limited Film deposition apparatus and method
CN105441904A (zh) * 2014-06-18 2016-03-30 中微半导体设备(上海)有限公司 气体喷淋装置、化学气相沉积装置和方法
CN106906453A (zh) * 2015-12-14 2017-06-30 朗姆研究公司 喷头组件
CN210030883U (zh) * 2018-04-13 2020-02-07 维高仪器股份有限公司 具有多区域引射器块的化学气相沉积设备

Also Published As

Publication number Publication date
JP2021521332A (ja) 2021-08-26
CN210030883U (zh) 2020-02-07
TWM597506U (zh) 2020-06-21
WO2019200312A1 (en) 2019-10-17
CN110373653A (zh) 2019-10-25
TWI809088B (zh) 2023-07-21
US20190316258A1 (en) 2019-10-17
TW201946125A (zh) 2019-12-01
JP7495882B2 (ja) 2024-06-05
US12584223B2 (en) 2026-03-24
DE112019001953T5 (de) 2021-01-21

Similar Documents

Publication Publication Date Title
US9593434B2 (en) Alkyl push flow for vertical flow rotating disk reactors
CN101413112B (zh) 多种气体直通道喷头
JP5209022B2 (ja) 堆積システムにおける堆積物の形成を制御するための方法および装置、ならびにそれらを含む堆積システムおよび方法
US8895107B2 (en) Chemical vapor deposition with elevated temperature gas injection
TWI417415B (zh) 化學氣相沉積流動入口元件及方法
CN101611472B (zh) 气体处理系统
EP2094406B1 (en) Method, apparatus and gate valve assembly for forming monocrystalline group iii-v semiconductor material
KR20070107782A (ko) 다중 유입구를 구비하는 화학기상증착 반응기
US20050011459A1 (en) Chemical vapor deposition reactor
TWI521089B (zh) 氣相成膜裝置
KR20110074899A (ko) 화학 기상 증착을 위한 장치 및 방법
KR20110069851A (ko) 기상증착을 위한 동심형 샤워헤드
KR20110069852A (ko) 연속적인 공급 화학 기상 증착
CN110373653B (zh) 具有多区域引射器块的化学气相沉积设备
TW201606120A (zh) 用於化學氣相沈積之旋轉盤反應器之氣體流軸盤
US10570510B2 (en) Periphery purge shutter and flow control systems and methods
TW201108305A (en) Gas phase growing apparatus for group III nitride semiconductor
JP5064132B2 (ja) 気相成長装置、及び半導体素子の製造方法
TWI490367B (zh) 金屬有機化合物化學氣相沉積方法及其裝置
JPWO1992005577A1 (ja) 化合物半導体結晶の成長方法及び装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant