WO2019200312A1 - Chemical vapor deposition apparatus with multi-zone injector block - Google Patents

Chemical vapor deposition apparatus with multi-zone injector block Download PDF

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Publication number
WO2019200312A1
WO2019200312A1 PCT/US2019/027312 US2019027312W WO2019200312A1 WO 2019200312 A1 WO2019200312 A1 WO 2019200312A1 US 2019027312 W US2019027312 W US 2019027312W WO 2019200312 A1 WO2019200312 A1 WO 2019200312A1
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WIPO (PCT)
Prior art keywords
reactant gas
zone
reactant
distribution outlets
reactor
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Ceased
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PCT/US2019/027312
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English (en)
French (fr)
Inventor
Bojan Mitrovic
Ian Kunsch
Juan GAMARRA
Mandar Deshpande
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Veeco Instruments Inc
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Veeco Instruments Inc
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Priority to DE112019001953.8T priority Critical patent/DE112019001953T5/de
Priority to JP2020555785A priority patent/JP7495882B2/ja
Publication of WO2019200312A1 publication Critical patent/WO2019200312A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Definitions

  • the present disclosure relates generally to semiconductor fabrication technology. More particularly, the present disclosure relates to an injector block for a chemical vapor deposition (CVD) reactor configured to improve efficiency in a vapor deposition process by reducing the amount of unused reactant gases vented from the CVD reactor, and improving vapor deposition uniformity across a growth surface.
  • CVD chemical vapor deposition
  • Certain processes for fabrication of semiconductors can require a complex process for growing epitaxial layers to create multilayer semiconductor structures for use in fabrication of high performance devices, such as light emitting diodes (LEDs), laser diodes, optical detectors, power electronics, and field effect transistors.
  • the epitaxial layers are grown through a general process called Chemical Vapor Deposition (CVD).
  • CVD Chemical Vapor Deposition
  • MOCVD Metal Organic Chemical Vapor Deposition
  • reactant gases are introduced into a sealed reactor chamber within a controlled environment that enables the reactor gas to be deposited on a substrate (commonly referred to as a wafer) to grow thin epitaxial layers.
  • Examples of current product lines for such manufacturing equipment include the TurboDisc®, MaxBright®, and EPIK® families of MOCVD systems, and the PROPEL® Power GaN MOCVD system, all manufactured by Veeco Instruments Inc. of Plainview, N.Y.
  • a number of process parameters are controlled, such as temperature, pressure, and gas flow rate, to achieve desired quality in the epitaxial layers.
  • Different layers are grown using different materials and process parameters.
  • devices formed from compound semiconductors such as III-V semiconductors typically are formed by growing a series of distinct layers.
  • the wafers are exposed to a combination of reactant gases, typically including a metal organic compound formed using an alkyl source including a group III metal such as gallium, indium, aluminum, and combinations thereof, and a hydride source including a Group V element such as NH 3 , AsH 3 , PH 3 , or an Sb metalorganic, such as tetramethyl antimony.
  • the alkyl and hydride sources are combined with a carrier gas, such as N 2 and/or H 2 , which does not participate appreciably in the reaction.
  • a carrier gas such as N 2 and/or H 2
  • the alkyl and hydride sources flow over the surface of the wafer and react with one another to form a III-V compound of the general formula In x Ga Y Al z N A As B PcSb D , where X+Y+Z equals approximately one, A+B+C+D equals approximately one, and each of X, Y, Z, A, B, C, and D can be between zero and one.
  • the Group III metal source is a volatile halide of the metal or metals most commonly a chloride such as GaCl 2 .
  • bismuth is used in place of some or all of the other Group III metals.
  • a suitable substrate for the reaction can be in the form of a wafer having metallic, semiconducting, and/or insulating properties.
  • the wafer can be formed of sapphire, aluminum oxide, silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), indium phosphide (InP), indium arsenide (InAs), gallium phosphide (GaP), aluminum nitride (A1N), silicon dioxide (Si02), and the like.
  • a tray commonly referred to as a wafer carrier
  • the wafer carrier is commonly rotated at a rotation speed on the order from about 50 to 1500 RPM or higher. While the wafer carrier is rotated, the reactant gases are introduced into the chamber from a gas distribution device, positioned upstream of the wafer carrier. The flowing gases pass downstream toward the wafer carrier and wafers, desirably in a laminar flow.
  • a gas distribution device positioned upstream of the wafer carrier.
  • the flowing gases pass downstream toward the wafer carrier and wafers, desirably in a laminar flow.
  • the wafer carrier is maintained at a desired elevated temperature by heating elements, often positioned beneath the wafer carrier. Therefore, heat is transferred from the heating elements to the bottom surface of the wafer carrier and flows upwardly through the wafer carrier to the one or more wafers.
  • the temperature of the wafer carrier is maintained on the order of between 700-l200°C.
  • the reactive gases are introduced into the chamber by the gas distribution device at a much lower temperature, typically 200°C, or lower, so as to inhibit premature reaction of the gases.
  • the temperature of the reactant gases substantially increase and viscous drag of the rotating wafer carrier impels the gases into rotation about an axis of the wafer carrier, so that the gases flow around the axis and outwardly toward a perimeter of the wafer carrier in a boundary region near the surface of the wafer carrier.
  • pyrolyzation can occur in or near the boundary region at an intermediate temperature between that of the gas distribution device and the wafer carrier. This pyrolyzation facilitates the interaction of the reactant gases and growth of the crystalline structure.
  • Non-deposited gas continues to flow toward the perimeter and over the outer edge of the carrier, where it can be removed from the process chamber through one or more exhaust ports disposed below the wafer carrier.
  • this process is performed with a succession of different gas compositions and, in some cases, different wafer temperatures, to deposit a plurality of layers of semiconductor having different compositions as required to form a desired semiconductor device.
  • a multiple quantum well (MQW) structure can be formed by depositing layers of III-V with different proportions of Ga and In. Each layer may be on the order of tens of Angstroms thick, i.e. a few atomic layers.
  • Process chambers of this type can provide a stable and orderly flow of reactant gases over the surfaces of the wafers, so that all regions of each of the wafers on the wafer carrier are exposed to substantially uniform conditions. This, in turn, promotes uniform deposition of materials on the wafers. Such uniformity is important because even minor differences in the composition and thickness of the layers of the material deposited on a wafer can influence the properties of the resulting devices.
  • a gas distribution device also referred to as an injector block or cold plate, includes a plurality of gas distribution outlets for disbursement of the reactant gases over an active gas emitting area approximately equal in size to the wafer carrier.
  • Some of the gas distribution outlets can be configured to distribute a first reactant gas, such as a mixture of a Group III alkyl, while other gas distribution outlets are configured to distribute a second reactant gas, such as a mixture of Group V hydride.
  • the gas distribution devices are normally provided with coolant channels.
  • the coolant channels carry a circulating flow of water or other liquid, and thus maintain the temperature of the gas distribution outlets, so as to inhibit premature reaction of the gases.
  • gas distribution devices are generally constructed to inhibit recirculation of the reactant gases upon exiting the gas distribution outlets. In some cases, recirculation of the discharged gases in the vicinity of the gas distribution outlets is reduced through the use of blade-like diffusers projecting downstream from the surface of the gas distribution outlets.
  • a gas distribution device is disclosed in Li.S. Pat No. 8,303,713, the contents of which are hereby incorporated by reference herein. Despite these developments, reactant gas distribution within a CVD reactor can be somewhat unpredictable.
  • Embodiments of the present disclosure provide an improved gas distribution device or injector block having first and second reactant gases outlets, wherein the reactant gases outlets are partitioned into at least a first zone and a second zone, thereby improving predictability in reactant gas distribution across the growth surfaces of the wafers during the CVD process, and improving efficiency by reducing the amount of unused reactant gases vented from the CVD chamber.
  • the injector block can include a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor.
  • the injector block can further include a plurality of second gas distribution channels between one or more second reactant gas inlets and a plurality of second gas distribution outlets to deliver a second reactant gas into the reactor, wherein the plurality of second reactant gas distribution outlets are partitioned at least into a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gases first zone.
  • the second reactant gas inlet for the second reactant gas second zone is configured to supply the second reactant gas at a concentration different from that of the second reactant gas supplied to the second reactant gas first zone. In one embodiment, the second reactant gas inlet for the second reactant gas second zone is configured to supply the second reactant gas any concentration substantially equal to that of the second reactant gas supplied to the second reactant gas first zone. In one embodiment the second reactant gas second zone encircles the second reactant gas first zone. In one embodiment the second reactant gas distribution outlets of the second reactant gas first zone are alternately interspersed with the first reactant gas distribution outlets.
  • the first reactant gas distribution outlets equally are spaced apart such that the axis of symmetry of the first reactant gas distribution outlets are asymmetrical about a medial plane extending in a horizontal direction.
  • the plurality of first reactant gas distribution outlets are partitioned into a first reactant gas first zone and a first reactant gas second zone.
  • the first reactant gas first zone has a larger number of first reactant gas distribution outlets than the first reactant gas second zone.
  • the flow rates of the first reactant gas first zone and the first reactant gas second zone or substantially equal. In one embodiment the flow rates of the first reactant gas first zone and the first reactant gas second zone are different.
  • first reactant gas first zone and the first reactant gas second zone include separate first reactant gas inlets.
  • first reactant gas inlet for the first reactant gases can zone is configured to supply the first reactant gas at a concentration different from that of the first reactant gas supplied to the first reactant gas first zone.
  • first reactant gas inlet for the first reactant gas second zone is configured to supply the first reactant gas at a concentration substantially equal to that of the first reactant gas supplied to the first reactant gas first zone.
  • Another embodiment of the present disclosure provides a method of improving a chemical vapor deposition system.
  • the method includes distributing a source of first reactant gas from a plurality of first reactant gas distribution outlets; distributing a source of second reactant gas from a plurality of second reactant gas distribution outlets, wherein the plurality of second reactant gas distribution outlets are partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.
  • the method further includes supplying the second reactant gas for the second reactant gas second zone at a concentration different from that of the second reactant gas being supplied to the second reactant gases first zone. In one embodiment, the method further includes supplying the second reactant gas for the second reactant gas second zone at a concentration substantially equal to that of the second reactant gas being supplied to the second reactant gas first zone. In one embodiment, the second reactant gas second zone encircles the second reactant gas first zone. In one embodiment, the plurality of the first reactant gas distribution outlets are partitioned into a first reactant gas first zone and a first reactant gas second zone. In one embodiment, the first reactant gas first zone has a larger number of first reactant gas distribution outlets than the first reactant gas second zone.
  • the method further includes supplying the first reactant gas at substantially equal flow rates to the first reactant gas first zone and the first reactant gas second zone.
  • the first reactant gas first zone and the first reactant gas second zone include separate reactant gas inlets.
  • the method further includes supplying the first reactant gas in the first reactant gas first zone and the first reactant gas in the first reactant gas second zone at different flowrates.
  • the reactor can include a susceptor, wafer carrier, spindle, and injector block.
  • the wafer carrier can extend radially outward from an axis.
  • the wafer carrier has a top surface and a bottom surface.
  • the top surface can be adapted to hold or support one or more wafers (or substrates) and the bottom surface can be adapted to engage the top or upper end of the spindle.
  • the wafer carrier can be removably mounted on the spindle.
  • the injector block can be configured to supply one or more reactant gases to a top surface of the wafer carrier.
  • the injector block can include a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor.
  • the injector block can further include a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, wherein the plurality of second reactant gas distribution outlets are partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.
  • the second reactant gas inlet for the second reactant gas second zone is configured to supply the second reactant gas at a concentration different from that of the second reactant gas supplied to the second reactant gas first zone. In one embodiment, the second reactant gas inlet for the second reactant gas second zone is configured to supply the second reactant gas at a concentration substantially equal to that of the second reactant gas supplied to the second reactant gas first zone. In one embodiment, the second reactant gas second zone encircles the second reactant gas first zone. In one embodiment, the second reactant gas distribution outlets of the second reactant gas first zone are alternately interspersed with the first reactant gas distribution outlets.
  • the first reactant gas distribution outlets are equally spaced apart, such that the axis of symmetry of the first reactant gas distribution outlets is asymmetrical about a medial plane extending in a horizontal direction.
  • the plurality of first reactant gas distribution outlets are partitioned into a first reactant gas first zone and a first reactant gas second zone.
  • the first reactant gas first zone has a larger number of first reactant gas distribution outlets than the first reactant gas second zone.
  • the flow rates of the first reactant gas first zone and the first reactant gas second zone are substantially equal. In one embodiment, the flow rates of the first reactant gas first zone and the first reactant gas second zone are different.
  • the first reactant gas first zone and the first reactant gas second zone include separate first reactant gas inlets.
  • the first reactant gas inlet for the first reactant gas second zone is configured to supply the first reactant gas at a concentration different from the first reactant gas supplied to the first reactant gas first zone.
  • the first reactant gas inlet for the first reactant gas second zone is configured to supply the first reactant gas a concentration substantially equal to that of the first reactant gas supplied to the first reactant gas first zone.
  • the first reactant gas distribution channels can extend in a linear pattern, a radial pattern, or a combination thereof.
  • the first reactant gas distribution channels can be configured as an annular channel in proximity to a perimeter of the injector block, and a plurality of channels traversing linearly through a portion of the injector block.
  • the second reactant gas distribution channels can extend in a linear pattern, a radial pattern, or a combination thereof.
  • the second reactant gas distribution channels can be configured as an annular channel in proximity to a perimeter of the injector block, and a circular chamber defined within the injector block.
  • FIG. l is a schematic view depicting a CVD reactor in accordance with an embodiment of the disclosure.
  • FIG. 2A is a perspective view of an injector block in accordance with an embodiment of the disclosure.
  • FIG. 2B is a cross-sectional view depicting the injector block of FIG. 2A.
  • FIG. 3A depicts a symmetrical arrangement of first and second reactant gas outlets on an injector block in accordance with an embodiment of the disclosure.
  • FIG. 3B depicts an asymmetrical arrangement of first and second reactant gas outlets on an injector block in accordance with an embodiment of the disclosure.
  • FIG. 4 depicts a trace of points along distribution outlets of an asymmetrically arranged injector block in accordance with an embodiment of the disclosure.
  • FIG. 5 is a graphical representation of CVD growth rates corresponding to symmetrically and asymmetrically arranged injector blocks in accordance with embodiments of the disclosure.
  • FIG. 6 depicts an operational flow of reactant gas flowing into a process chamber during a CVD process in accordance with an embodiment of the disclosure.
  • FIG. 1 a schematic view of a CVD reactor 100 is depicted in accordance with an embodiment of the disclosure.
  • the reactor 100 defines a process chamber 102 configured to serve as a process environment space.
  • a gas distribution device or injector block 104 is arranged at one end of the process chamber 102.
  • the end of the process chamber 102 in which the injector block 104 is arranged can be referred to as the“top” end of the process chamber 102.
  • This end of the chamber typically, but not necessarily, is disposed at the top of the chamber in the normal gravitational frame of reference.
  • the downward direction as used herein refers to as the direction away from the injector block 104; whereas the upward direction refers to the direction within the chamber, toward the injector block 104, regardless of whether the instructions are aligned with the gravitational upward and downward directions.
  • the“top” and“bottom” surfaces of elements may be described herein with reference to the frame of reference of the process chamber 102 and the injector block 104.
  • the injector block 104 can be operably coupled to one or more gas supplies 106A/B for supplying gases to be used in the CVD process, such as reactant and carrier gases.
  • the injector block 104 is arranged to receive the various gases from the gas supplies 106A/B, and direct the flow of the gases 108A/B into the reactor chamber 102 in a generally downward direction.
  • the injector block 104 includes a coolant system 110 configured to circulate a cooling fluid to maintain the injector block 104 at a desired temperature during operation.
  • the coolant system 110 can also be configured to circulate a cooling fluid through the walls of the process chamber 102.
  • the process chamber 102 is also equipped with an exhaust system 112 configured to remove spent gases from the interior of the chamber 102, so as to enable a continuous flow of gas in the downward direction from the injector block 104.
  • a spindle 114 can be arranged within the process chamber 102, so that a central axis 116 of the spindle 114 extends in the up ward/ down ward direction.
  • the spindle 114 can be mounted within the process chamber 102 by a conventional rotary pass-through device incorporating bearings and seals so that the spindle 114 can rotate while maintaining a seal with the walls of the process chamber 102.
  • Wafer carrier 120 can be releasably mounted to the top end of the spindle 114.
  • the wafer carrier 120 can have one or more pockets 122 into which wafers are held and onto which semiconductor materials can be epitaxially grown.
  • the wafer carrier 120 can have a generally circular cross-section, arranged about the central axis 116.
  • a heating element 124 can be mounted within the process chamber 102 and at least partially surround the spindle 114. Accordingly, in one embodiment, the process chamber 102, injector block 104, spindle 114, wafer carrier 120, and heating element 124 are arranged symmetrically about the central axis 116.
  • the spindle 114 can be connected to a rotary drive mechanism 126, such as an electric motor drive, configured to rotate the spindle 114 and wafer carrier 120 at a desired speed.
  • a rotary drive mechanism 126 such as an electric motor drive
  • the rotary drive mechanism is configured to rotate the spindle 114 at a rotational speed of between 50-1500 RPM.
  • Process gas can be introduced into the process chamber 102 through the injector block 104. Following introduction, the process gas passes downwardly toward the wafer carrier 120, and over the top surface 128 of the wafer carrier 120 where the wafers are held. The flow of process gas 108A/B continues to flow around the periphery of the wafer carrier 120, and is eventually exhausted from the process chamber 102 through the exhaust system 112. Often the process gas in proximity to the top surface 128 is predominantly composed of a carrier gas, such as H 2 and/or N 2, with some amount of first and second reactive gas components.
  • the first reactive gas component can be an alkyl source Group III metal
  • the second reactive gas component can be a hydride source Group V element.
  • the heating element 124 can transfer heat to the wafer carrier 120, principally by radiant heat transfer. In other embodiments, the wafer carrier 120 can be heated via inductive heat transfer. The applied heat from the heating elements 124 is transferred upwardly through the body of the wafer carrier 120 to the top surface 128 thereof. Some portion of the heat on the top surface 128 of the wafer carrier 120 is transferred to the wafers and the process gas 108A/B passing over the top surface one twenty. Inadvertently, some portion of the heat is also transferred to cooler elements within the process chamber 102, such as the walls of the process chamber 102 and the injector block 104.
  • Pyrolyzed gas is desirably removed from the process chamber 102 prior to accumulating on any of these cooler structures, particularly as condensation can occur more rapidly on relatively cooler surfaces.
  • the wall structure of the process chamber 102 can form an upper and lower shutter configured to encourage downward gas flow, thereby reducing or eliminating any vortex that would otherwise recirculate hot pirate ties pyrolyzed gases back upwards toward relatively cooler surfaces, such as the injector block 104, to condense.
  • Improvements in the injector block 104 can further promote a more uniform growth rate across the top surface 128 of the wafer carrier 120. Additionally, improvements in the injector block 104 can promote a more efficient use of the reactant gases within the process chamber 102, such that a smaller quantity of unused reactive gases are vented from the process chamber 102, thereby representing a significant operational cost savings over CVD reactors of the prior art.
  • FIG. 2A a perspective view of an injector block 104 is depicted in accordance with an embodiment of the disclosure.
  • FIG. 2B depicts a cross-sectional view of the injector block 104 of FIG. 2 A.
  • the injector block 104 can alternatively be referred to as a gas distribution device and/or a cold plate.
  • the injector block 104 is positioned in the top end of the process chamber 102.
  • the injector block 104 can have an upstream surface 130 and a downstream surface 132 (as depicted in FIG. 2B).
  • the downstream surface 132 of the injector block 104 can face the downstream direction, toward the wafer carrier 120 and wafers.
  • the injector block 104 can be operably coupled to one or more sources of gas 106A/B, thereby enabling distribution of the reactant and carrier gases.
  • the injector block 104 can further operably coupled to a coolant supply 110 (as depicted in FIG. 1), thereby enabling coolant to flow through a portion of the injector block 104 to aid in maintaining the reactant and carrier gases at a desirable temperature.
  • the one or more first sources of gas 106A1-2 can be configured to supply first reactant gas, such as a Group III alkyl metal, typically in admixture with a carrier gas such as H 2 and/or N 2 , to the injector block 104.
  • the first reactant gas inlets 106A1-2 can be in fluid communication with a first reactant flow path 134.
  • the flow path 134 can be a conduit defined within a portion of the injector block 104.
  • the flow path 134 can be configured as one or more annular channels positioned in proximity to a perimeter of the injector block 104.
  • the flow path 134 is defined as an annular groove having one or more dividers 138A/B, alternatively referred to as baffles, thereby dividing the alkyl or first reactant flow path 134 into a first reactant gas first zone 140A and a first reactant gas second zone 140B.
  • the first reactant gas first and second zones 140A/B can be at least partially sealed by one or more plates 141A/B.
  • the respective first reactant gas first and second zones 140A/B can include a plurality of distribution channels 142A/B traversing through a portion of the injector block 104.
  • the distribution channels 142A/B can traverse linearly through a portion of the injector block 104.
  • the lower portion of a wall defining the distribution channels 142A/B can define a distribution outlet 144A/B extending lengthwise along the distribution channels 142A/B, thereby enabling the first reactant gas within the distribution channels 142A/B to be introduced into the process chamber 102.
  • the distribution outlets 144A/B can further pass through a nozzle to present a desirable distribution flow.
  • a first quantity of the first reactant gas flows into the first reactant gas inlet 106A1, through the first reactant gas first zone 140A, and out through corresponding distribution outlets 144A defined by the first distribution channels 142A.
  • a second quantity of the first reactant gas flows into the second reactor gas inlet 106A2, through the second zone 140B, and out through the corresponding distribution outlets 144B defined by the second distribution channels 142B. Thereafter, the first reactant gases flow downward within the process chamber 102, towards the wafer carrier 120 and wafers.
  • the first reactant gas first zone 140 A can include a greater number of distribution channels 142A and/or distribution outlets 144A than the first reactant gas second zone 140B. For example, as depicted, in one embodiment, there are fourteen first distribution channels 142A, and three second distribution channels 142B. In other embodiments, other quantities of distribution channels are contemplated.
  • the flow rate of the first reactant gas can be substantially uniform across the injector block 104 (e.g., the flow rates between the first zone 140A and the second zone 140B can be substantially equal). In other embodiments, the flow rate of the first reactant gas within the first zone 140 A can be either relatively higher or lower than the flow rate within the second zone 140B.
  • the first reactant gas supply to the second inlet 106A2 can include a higher concentration of reactant gas, relative to the concentration of reactant gas supplied to the first inlet 106A1. In other embodiments, the concentration of the reactant gas supply to the first and second inlets 106A1-2 can be substantially equal.
  • the injector block 104 can include one or more second reactant gas inlets 106B1-2, configured to supply second reactant gases, such as Group V hydrides, typically in admixture with a carrier gas such as 3 ⁇ 4 and/or N 2 , to the injector block 104.
  • the second reactant gas inlets 106B1-2 can be in fluid communication with a second reactant flow path and/or distribution channels 150A-B.
  • the distribution channels 150 can be configured as one or more annular channels, linear channels, or a combination thereof.
  • the second reactant distribution channels 150A-B can be divided into a first zone 151 A and a second zone 151B.
  • the second zone 151B can at least partially encircle the first zone 151 A.
  • the first zone 151 A can be partitioned from the second zone 151B by a groove or divider 153.
  • the respective second reactant gases within the first and second zones 151A/B can be in fluid communication with a plurality of second reactant gas outlets 152A/B.
  • the second reactant gas outlets 152A/B can generally be positioned beneath the first and second zones 151A/B, thereby enabling the second reactant gas within the first and second zones 151A/B to be introduced into the process chamber 102.
  • the distribution outlets 152 pass through diffusers, which can in some embodiments can be defined between adjacent first reactant gas outlet nozzles. Accordingly, in one embodiment, at least a portion of the second reactant gas distribution outlets 152A-B can be interspersed with at least a portion of the first reactant gas distribution outlets 144.
  • a first quantity of the second reactant gas flows into the second reactant gas inlets 106B1, into the respective first distribution channel 150A of the second reactant gas first zone 151 A, and out through the corresponding distribution outlets 152A.
  • a second quantity of second reactant gas flows into the second reactant gas inlet 106B2, into the second distribution channel 150B of the second reactant gas second zone 151B, and out through the corresponding second distribution outlets 152B. Thereafter, the second reactant gases flow downward within the process chamber 102, toward the wafer carrier 120 and wafers.
  • the second reactant gas first zone can include a greater number of distribution outlets 152 than the second reactant gas second zone.
  • the flow rate of the second reactant gas can be substantially uniform across the injector block 104 (e.g., the flow rates between the first zone 151 A and the second zone 151B can be substantially equal).
  • the flow rate of the second reactant gas within the first zone 151 A can be either relatively higher or lower than the flow rate of the second zone 151B.
  • the supply of second reactant gas to the first inlet 106B1 can include a higher concentration of reactant gas, relative to the concentration of reactant gas supplied to the second inlet 106B2.
  • the gas within the second zone 151B can primarily be composed of H 2 and/or N 2 , while the first zone 151 A serves as the primary hydride source.
  • the concentration of reactant gas supply to the first and second inlets 106B1-2 can be substantially equal.
  • the gas distribution outlets 144/152 can be either symmetrical or asymmetrical in relation to an axis of symmetry of the injector block 104.
  • the distribution outlets 144 on either side of the axis of symmetry are positioned an equal distance apart from the axis of symmetry (e.g., Di equals D 2 ); accordingly, FIG. 3A represents a symmetrical arrangement of the distribution outlets 144/152.
  • the distribution outlets on either side of the axis of symmetry are positioned at unequal distances apart from the axis of symmetry (e.g., D 3 is not equal to D 4 ); accordingly, FIG.
  • 3B represents an asymmetric arrangement of the distribution outlets 144/152.
  • the plurality of distribution outlets 144/152 can be equally spaced apart from one another on the injector block 104; rather the difference between symmetrical and asymmetrical arrangements depends on the distribution outlets network spacing from the axis of symmetry.
  • an asymmetric arrangement provides an improvement in flow uniformity beneath the injector block 104.
  • the wafer carrier 120 rotates generally about the axis of symmetry beneath the injector block 104, a given point Pi along an outlet 144/152 positioned on one side of the axis of symmetry will trace concentric circles different from the concentric circles of a given point P 2 along an outlet 144/152 positioned on the opposite side of the axis of symmetry.
  • the effective spacing between distribution outlets 144/152 can be effectively reduced (e.g., reduced by 50%), thereby improving reactant gas distribution and uniformity of CVD growth. Referring to FIG.
  • a graphical representation of the CVD growth rates corresponding to symmetric and asymmetric outlet distributions are depicted in accordance with embodiments of the disclosure. Improvements in uniformity of CVD growth rates enables the distribution outlets 144/152 of asymmetrical injector blocks to be spaced further apart, which represents reduced manufacturing costs, and in some cases improved gas flow, as the various distribution channels can be made larger in size.
  • a cross-sectional view of the CVD reactor 100 showing the reactant gas concentrations and flow lines within the process chamber 102 during a CVD process, is depicted in accordance with an embodiment of the disclosure.
  • a first reactant gas such as a Group III alkyl metal in admixture with one or more carrier gases such as H 2 and/or N 2 , is supplied through the first reactant gas inlets 106A1-2, into a respective first and second zone 140A/B, and injected into the process chamber 102 via a plurality of first reactant gas outlets 144A/B.
  • a second reactant gas such as a Group V hydride also in admixture with one or more carrier gases, is supplied to the second reactant gas inlets 106B1-2, into a respective first and second zone 151A/B, and injected into the process chamber 102 via a plurality of second reactant gas outlets 152A/B.
  • the first and second reactant gases thus issues as a series of elongated curtain-like streams of gas from the respective first reactant gas outlets 144A/B and second reactant gas outlets 152A/B.
  • the temperature of the reactant gases substantially increase and viscous drag of the rotating wafer carrier 120 impels the first and second gases into rotation about an axis of the wafer carrier 120, so that the gases flow around the axis and outwardly toward a perimeter of the wafer carrier 120 in a boundary region near the top surface of the wafer carrier 120.
  • pyrolyzation can occur in or near the boundary region at an intermediate temperature between that of the injector block 104 and the wafer carrier 120. This pyrolyzation facilitates the interaction of the reactant gases and growth of the crystalline structure.
  • Non-deposited gas continues to flow toward the perimeter and over the outer edge of the carrier 120, where it can be removed from the process chamber 102 through one or more exhaust ports disposed below the wafer carrier 120.
  • the first reactant gas emitted from the second zone 140B can include a higher concentration of Group III alkyl metals, relative to the first reactant gas emitted from the first zone 140A, and the second reactant gas second zone 151B— which can at least partially encircle the second reactant gas first zone 151 A— can include a higher concentration of carrier gas relative to the second reactant gas first zone 151 A.
  • the increased concentration of Group III alkyl metals in the first reactant gas second zone 140B and the decreased concentration of Group V hydrides in the second reactant gas second zone 151B can serve to improve growth uniformity and promote a more efficient use of the reactant chemicals during the CVD process, thereby reducing production costs and improving quality.

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