TW201237994A - System and apparatus for flowable deposition in semiconductor fabrication - Google Patents

Abstract

Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0 DEG C while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10 DEG C or higher than the wafer temperature.

Description

201237994 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an electronic device manufacturing program, apparatus, and system. In a particular embodiment, the present invention is directed to a dielectric gap fill process, apparatus, and system. The present application claims the benefit of U.S. Provisional Patent Application Serial No. 61/425,150, the entire disclosure of which is incorporated herein by reference. [Prior Art] In semiconductor processing, it is usually necessary to fill a high aspect ratio gap with an insulating material. This is the case for shallow trench isolation (STI), inter-metal dielectric (IMD) layer, interlayer dielectric (ILD) layer, front metal dielectric (pmd) layer, passivation layer, and the like. As device geometries shrink and thermal budgets decrease, gap-free fill of narrow width, south aspect ratio (AR) features (e.g., AR > 6:1) becomes more difficult due to limitations of existing deposition processes. New methods, devices, systems, and techniques for dielectric gap filling are discussed herein. SUMMARY OF THE INVENTION In some implementations, a wafer support apparatus is provided. The wafer support apparatus can include a chuck including a top surface, a bottom surface, and an outer surface. The top surface and the bottom surface may be substantially parallel to each other' and may be offset from each other. The outer surface can be between the top surface and the bottom surface, and the top surface can be configured to support a semiconductor wafer. The wafer support device can also include a housing. The outer casing can include an outer wall and a bottom plate of the outer casing connected to the outer wall. The outer casing 160970.doc 201237994 can include a first insulating zone extending from the outer wall toward the center of the outer casing floor. The first thermal insulation zone can be stopped while extending to the center of the outer casing floor. The bottom surface of the chuck may face the bottom plate of the casing, and the bottom and outer surfaces of the chuck may be substantially within the volume defined by the outer wall and the bottom plate of the casing. The chuck and the housing are configurable to move in a semiconductor manufacturing chamber as a single assembly. There may be no substantial thermal contact between the outer surface of the chuck and the outer wall of the outer casing, and there may be no substantial thermal contact between the bottom surface and the outer casing floor across the first thermal insulation region. In some other implementations, when the wafer deck device is exposed to gas and environmental conditions present in the flowable deposition semiconductor fabrication chamber, it may occur between the outer surface of the chuck and the outer wall of the housing. There is no substantial thermal contact and no substantial thermal contact between the bottom surface and the bottom plate of the casing across the first insulating zone. In still other implementations, the gases may comprise or

He, and such environmental conditions may include a pressure between 25 Torr and (iv). In some implementations, 'there may be at least a gap between substantially all of the outer surface of the chuck and the outer wall of the outer casing, and substantially all of the bottom surface across the first thermal insulation zone. There may be a gap of at least 0.015" between the bottom plate of the outer casing. 2 In some implementations, the outer surface and the outer wall may be substantially cylindrical and have an inner perimeter, and the barrier region may not extend to the inner perimeter ', in some other implementation orders, the wafer branch device interruptable area _ coffee break" e dielectric interrupt zone may include outer == and a dielectric substrate connected to the outer dielectric wall, and The dielectric substrate may include a second thermal insulation region extending from the outer dielectric wall toward the center of the dielectric substrate from 160970.doc 201237994. The dielectric substrate may be inserted between the bottom plate of the housing and the bottom surface, and the An outer dielectric wall can be inserted between the outer wall and the outer surface. The outer wall, the outer dielectric wall and the outer surface can have no substantial thermal contact, across the second thermal insulation region on the bottom surface There is no substantial thermal contact between the dielectric substrates and across the first thermal insulation zone There is no substantial thermal contact between the dielectric substrate and the bottom plate of the housing. In some implementations, the outer surface and the surface of the outer dielectric wall facing the outer surface can be separated by 0. 015" and 0.050" a gap between the bottom surface and the surface of the dielectric substrate in the second heat insulating region facing the bottom surface, which may be separated by a gap between 0.015 " and 0.050", the external dielectric The surfaces of the wall and the outer wall facing each other may be separated by a gap between the 〇〇 15 " and the ridge, and the surface of the dielectric bottom plate may be spaced from the surface of the outer casing of the outer casing in the first thermal insulation zone a gap between 〇〇 15 " and 〇〇5〇" In some implementations, the chuck can include a cooling channel located between the top surface and the bottom surface and passing through The bypass path of the chuck. In some other implementations, the circuitous path can include a plurality of nested c-shaped segments and a plurality of spanning segments having different sizes. Each span segment can have another C-shaped The corresponding end of the segment joins the end of a C-shaped segment and only one span Any two c-shaped segments can be joined together. In some implementations, the chuck can include an annular purge gas passage between the top surface and the bottom surface. A circular pattern of holes can blow the ring A sweep gas channel is fluidly coupled to the top surface. In still other implementations, the wafer subassembly can be configured to support a wafer of a specified nominal diameter, and the diameter of the 160970.doc 201237994 circular pattern can be comparable The nominal diameter is as small as 1 mm to 2 mm. In some implementations, the wafer support device can also include a guard ring. The guard ring can be substantially annular and have an inner diameter greater than the top surface configured to be a branch The designated nominal diameter of the semiconductor wafer. The guard ring may be supported by the chuck and may not be in contact with the outer wall of the outer casing or the outer surface of the chuck. In some other implementations, the guard ring can comprise a plurality of cylinders, each post projecting a first amount from a surface of the guard ring facing the top surface and projecting into a recess in the top surface, the recess The depth is less than the first amount. The cylindrical protruding surface of the guard ring can be offset from the top surface by 15 microns to 250 microns. In some implementations, there may be a gap of at least 15" between the surface of the guard ring closest to the outer wall and the outer wall. In some implementations, 'a plurality of raised protrusions protrude from the top surface of the chuck The protrusions may be arranged in a concentric circular pattern, and each protrusion may protrude from the top surface by 15 microns to 250 microns. In some implementations, the chuck may further comprise a calibration light tube and an in situ light tube (in- Situ light pipe). One end of the calibration light pipe may terminate at a center of the top surface, and one end of the in-situ light pipe may terminate in a phosphor optical disc between the top surface and the bottom surface (ph〇 The sph〇r puck) may be separated from the in-situ light pipe by a distance within the chuck that is less than a distance from a center of the bottom plate of the outer casing to the first thermal insulation zone. In some implementations The chuck may include a first plate and a second plate. The first plate may include a first top surface and a first bottom surface, and the second plate may include a second surface and a second bottom surface. The first top surface may be combined To the second bottom surface, and the passage can be recessed to the second In the bottom surface, the first plate may include two holes 160970.doc * 6 - 201237994, each through hole corresponding to a different terminal end of the cooling channel, and the first plate and the second plate may be aligned, Each of the through holes is aligned with a corresponding terminal of the cooling passage. In still other implementations, the chuck may further include a third plate having a third top surface and a third bottom surface. Bonding to the second top surface, and the third bottom surface may include an annular purge gas passage and one or more purge gas supply passages fluidly connected to the annular purge gas passage. The circular pattern of the holes may be the annular shape a purge gas passage is fluidly connected to the third top surface, and a purge gas inlet can pass through the first plate and the second plate, and the one or more purge gas supply passages are fluidly connected to the first bottom surface In some implementations, the chuck and the outer casing can be made primarily of aluminum, and the dielectric interruption zone can be made primarily of gossip. In some other implementations, the chuck can be primarily comprised of 3003 aluminum. Made, and the top surface can be coated with YF3. In some implementations, a device for semiconductor fabrication can be provided. The device for semiconductor fabrication can include a chamber, a chuck, a chuck housing, and a controller. The chamber can include a heater system and a substantially cylindrical shape. The inner surface of the chuck. The chuck may include a wafer support region that is unobstructed by the chuck housing, a substantially cylindrical outer surface, and a cooling system, and may be substantially contained in the chuck housing and by the chuck The casing casing may include a substantially cylindrical outer surface and movable relative to the chamber. The controller may be configured to control the heater system and the cooling system, and by adjusting cooling The first operating configuration is generated by the system temperature and the heating system temperature. In the first operational configuration, the inner surface of the chamber may have at least an assigned temperature, and the wafer branch may have a phase between + and + Temperature between listening ^ 160970.doc 201237994 The outer surface of the chuck housing may have a temperature that is at least 5 ° C higher than the temperature of the wafer support region. In some other implementations, the controller can be further configured to generate a second operational configuration by adjusting the cooling system temperature and the heating system temperature. In the second operational configuration, the inner surface of the chamber, the outer surface of the chuck housing, and the outer surface may have greater than 7 turns. (: temperature. In some other implementations, the controller can be further configured to generate a third operational configuration by adjusting the cooling system temperature and the heating system temperature. In the third operational configuration, the The inner surface of the chamber, the outer surface of the chuck housing, and the wafer support area may have a relationship between (3:50 and 50. (in some implementations) the controller may be further grouped The state maintains a temperature profile 'temperature change across the wafer supported by the wafer support region less than 0.35 〇 C. In some implementations, a semiconductor fabrication module can be provided. The semiconductor fabrication module can include a chamber, wafer support a device, a showerhead, a gas distribution system, a heating system, a cooling system, and a temperature controller. The chamber may include an inner surface, a top plate, and a bottom plate. The wafer support device may be contained in the chamber and may include a chuck And a housing configurable to support a semiconductor wafer having a nominal diameter D by a wafer support region on a top surface of the chuck during processing, the overall shape being substantially cylindrical And having a nominal diameter greater than D. The outer casing may include an outer surface and a bottom plate. The outer surface may be substantially cylindrical and may define an outer edge of the bottom plate. The chuck may be located qualitatively defined by the outer surface Within the volume, the showerhead can be positioned above the wafer support area. The gas distribution system can be configured to deliver reactants to the chamber by spraying 160970.doc 201237994. The heating system can be grouped State to heat the inner surface of the chamber, the top plate and the bottom plate, and the cooling system can be configured to cool the chuck. The temperature controller can be configured to control the amount of heating supplied by the heating system and The amount of cooling supplied by the cooling system. The temperature controller can also be configured to provide a first operational configuration by adjusting the cooling system and the heating system. In the first operational configuration, the chamber The inner surface may have a temperature of at least 40 ° C, the wafer support region may have a temperature between -10 ° C and +i 〇 t, and the outer surface of the outer casing may have a ratio of the wafer support region The temperature is at least 5 ° C. In some implementations of the semiconductor manufacturing module, the shower head can include a first inflating portion and a second inflating portion. The first inflating portion and the second inflating portion can be fluidly isolated from each other within the shower head, and can each be Equipped with gas distribution holes that fluidly connect the two plenums with a processing volume between the wafer support area and the showerhead. The gas distribution system can be further configured to pass the first A sprinkler supply line delivers one or more first reactants to a first plenum of the sprinkler and delivers one or more second reactants to the sprinkler via a second sprinkler supply line Second inflator. In some other implementations, the first sprinkler supply line can be configured to be heated by a first sprinkler supply line heater, the second sprinkler supply line can be configured to be Heating by a second sprinkler supply line heater, and the temperature controller can be further configured to control the amount of heating supplied by the first sprinkler supply line heater and the second sprinkler supply line heater . In still other implementations, the first sprinkler supply line heater, the second sprinkler supply line heater, and the temperature controller can be configured via 160970.doc 201237994 to supply the first sprinkler The line and the second showerhead supply line are heated to a temperature of at least 100 °C. In some implementations of the semiconductor fabrication module, the chuck can be configured to supply purge gas around a perimeter of the wafer support region. In some other implementations of the semiconductor fabrication module, the wafer support region can include a plurality of protrusions configured to cause a semiconductor wafer supported by the wafer support region to deviate from the chuck The distance between 15 microns and 250 microns. The chuck can be configured to supply purge gas around the perimeter of the wafer support region via a circular pattern of purge gas holes. The circular pattern can have a diameter that is about 1 mm to 2 mm smaller than the nominal diameter, and the purge gas holes can have an exit diameter that is less than the diameter difference between the circular pattern and the nominal diameter. In some implementations of the semiconductor fabrication module, the wafer support device can further include a dielectric interrupt region interposed between the chuck and the housing. The dielectric interruption zone may be in thermal thermal contact with the outer casing region of the bottom plate of the outer casing and not substantially in thermal contact across portions of the bottom plate other than the central outer casing region. The dielectric interruption zone can also be in substantial thermal contact with the chuck across the central chuck area, and portions of the chuck that are outside of the central chuck area are not in substantial thermal contact with the chuck. The center chuck region and the center outer casing region may have a nominal size less than 50% of the diameter of the chuck when viewed along a central axis of the outer surface of the outer casing. In some other implementations of the semiconductor fabrication module, the dielectric interruption region and the surfaces of the outer casing facing each other (except for portions of the outer surface that contact each other across the central outer casing region) may be spaced apart from each other. 〇1 5"and 〇.〇5〇" 160970.doc -10- 201237994 The gap between the dielectric break zone and the face of the chuck facing each other (except for these faces across the central chuck area Outside of the parts in contact with each other) can be separated from each other by a gap between 0.015" and 0.050". In some other implementations of the semiconductor fabrication module, the wafer support device can further include a guard ring. The guard ring may be supported by the chuck, may be substantially axisymmetric, and may have an inner bore that is less than the nominal diameter of the chuck. The guard ring can be offset from the chuck by 15 microns to 25 microns along the central axis of the chuck. The deviation from the chuck may be provided by a cylinder that is in thermal contact with the chuck across an overlapping portion that is not offset from the chuck, and the surface of the protective ring and the dielectric break region facing each other may be Separate the gap between 〇〇15"to 〇〇5〇" and the guard ring is spaced from the surface of the outer casing facing each other by a gap of 15" to 0.050". In some implementations, one or more components of the semiconductor fabrication chamber selected from the group consisting of a chamber, a chuck, an outer casing, and a showerhead are at least partially coated in the region of the reactants exposed to the chamber. Hydrophobic coating. In some other implementations, the hydrophobic coating can be Ti〇2. The details of one or more of the subject matter described in the specification are set forth in the drawings and the description below. Other features, aspects, and advantages will become apparent from the description of the drawings and claims. Note that the relative dimensions in the figure below may not be scaled. [Embodiment] The system and method are introduced. The apparatus for dielectric gap filling is provided herein. According to various embodiments, the apparatus and system are configured to perform various integrated processes. The integration process includes deposition of a flowable dielectric material (in In some embodiments, it is a flowable oxide material.) Although the following discussion contains details of the flowable oxide deposition process, 'similar techniques and equipment can also be used for the materials and & Flowable oxide technology, and is intended to include these additional flowable thin film technologies. However, this method, process, system and technology are not limited to gap fill applications and can be used in any flowable deposition semiconductor manufacturing. The program includes, but is not limited to, planarization, sacrificial film deposition, and sealing. In some embodiments, the device and system are configured to use a flowable dielectric material and a high density electropolymer deposition chemical vapor deposition dielectric. Material for gap filling. '" Various terms that are specific to the environment (such as (but not limited to), "bottom", "top" , "below", etc.) can be used in conjunction with the schema to help understand the concepts described in this article. The use of such terms should not be interpreted as requiring that such orientation be used to implement the concepts described herein, unless the particular concept requires the described orientation to function. Figure 1 is a process flow diagram depicting a representative flowable gap filling method. Many or all of the steps shown in Figure 1 can be performed in a flowable gap fill deposition module, but some steps can be performed in another process module. For example, 'step m and step 15' can be performed in a module that is specifically configured for plasma processing. Wafers can be supplied to the modules and transition between modules as appropriate. Providing the wafer to the module may involve clamping the wafer to other supports in the susceptor or module chamber. For this purpose, an electrostatic or mechanical chuck can be used. The conversion module can be executed under vacuum (for example, using a vacuum transfer system) or under an inert atmosphere as appropriate. 160970.doc _ 201237994 Plasma pretreatment or cleaning can be performed in step 丨丨5 to prepare the wafer for deposition. As mentioned above, step 115 can also occur in a module or chamber that is separate from the other steps in the procedure. If so, the wafer may need to be transferred to the deposition reactor after performing step 115. In step 120, a process gas is introduced. In an embodiment in which a ruthenium-based dielectric is formed, the process gas comprises a compound containing ruthenium and, if desired, another reactant. For example, a precursor containing ruthenium may be reacted with an oxidant to form ruthenium dioxide or with a nitride to form ruthenium nitride. The gas may also contain one or more dopant precursors. Sometimes (but not necessarily) there is an inert carrier gas. In certain embodiments, a gas is introduced using a liquid injection system. A compound containing hydrazine and an oxidizing agent are introduced into the reaction chamber through a separate inlet. In certain embodiments, the process gas comprises a solvent, a catalyst, and/or a dopant. Again, in certain embodiments, the residence time on the surface of the wafer can be increased and/or maximized by the use of the reactor to provide the reactants. For example, the reactants can be introduced before other reactants. Examples of the cerium precursor include, but are not limited to, alkoxy decane such as tetrahydromethylcyclotetraoxane (T〇MCTS), octadecylcyclotetrahydrogen (OMCTS), tetraethoxy decane (TE〇s), triethoxydecane (TEs), trimethoxymethane (TriMOS), mercaptotriethoxy-n-decanoic acid (MTEOS), tetramethyl-n-decanoic acid g (TM〇s ), methyl trimethoxy decane (MTMOS), dimethoxy dimethyl decane (DmDm 〇 S), diethoxy oxime (DES), dimethoxy decane (DM 〇 s), triphenyl Ethyl ethoxy decane, ^ (triethoxy sulphate)-2-(diethoxy fluorenyl fluorenyl) ethane, tri-tert-butoxy sulphate, hexamethoxy dioxane (HM 〇 DS), hexaethoxy bismuth 160970.doc -13- 201237994 (HEODS), tetraisocyanato decane (TICS), di-t-butylaminocide (BTBAS), hydroquinone sesquioxane, Third butoxyacetamidine, T8-hydrogenated sulfoxane, octahydro POSSTM (polyhedral oligomeric sesquioxane) and 1,2-dimethoxy-1,1,2,2-four Methyl acetylene. Other examples of ruthenium-containing precursors include, but are not limited to, decane (SiHO, acetane, propane, hexane, cyclohexasilane, and alkyl decanes such as methyl decane and ethyl decane. Suitable oxidizing agents Examples include, but are not limited to, ozone (〇3), peroxides containing hydrogen peroxide (仏〇2), oxygen (〇2) 'water (h2〇), alcohols (such as methanol, ethanol, and isopropyl) Alcohol), Nitric Oxide (NO), Nitrogen Dioxide (N02), Nitrous Oxide (N2〇), Carbon Monoxide (c〇), and Carbon Dioxide (C〇2). In some embodiments, the distal plasma The generator can supply a reactive oxidant species. Solvents or other surfactants can be used to slow surface tension and increase the wetting of the reactants on the surface of the substrate. It can also increase the miscibility of the dielectric precursor with other reactants, especially Is when condensing in the liquid phase. Surfactant

The active agent can be used for carbon doped ruthenium precursors because the carbonaceous portion often makes the precursor more hydrophobic. And increase the surface of the substrate

This is because the carbonaceous portion often makes the precursor more hydrophobic. 160970.doc Surfactants can be used to slow the surface tension and wet the reactants. It can also increase the apparent mixing before the dielectric, especially the 1 county force knows ±, people, | -14- 201237994. The solvent can be non-polar or polar and protic or aprotic. The solvent can be matched with the choice of dielectric precursor to improve the miscibility of the oxidant. The package contains a hydrocarbon and olefin; the polar non-f solvent package: propylene and acetic acid; and the polar proton (4) contains Relying on (iv) compounds. Examples of the solvent which can be introduced include alcohols (e.g., isopropanol, ethanol, and methanol) or other compounds (e.g., diethyl ether, carbonyl, guess) which can be mixed with the reactants. Solvents are optional and, in certain embodiments, may be introduced separately or in conjunction with an oxidizing agent or another process gas. Examples of the solvent include, but are not limited to, methanol, ethanol, isopropanol, propionium, diethyl hydrazine, ethyl bromide, monomethyl methamine and dimethyl sulfoxide, tetrahydrofuran (THF), dioxane, and Alkanes, benzene, toluene, isoheptane and diethyl ether. In certain embodiments, the solvent can be introduced prior to the other reactants by blowing or normal delivery. In some embodiments, the solvent can be introduced to promote hydrolysis by blowing a solvent into the reactor, especially if the precursor has low miscibility with the oxidant. Examples of nitrogen-containing compounds (for example, deposited tantalum nitride or hafnium oxynitride) include niobium-containing and nitrogen-containing precursors (for example, trisalmine (TSA) or dioxane (DSA)), nitrogen precursors. (eg, ammonia (cis 3), BTBAS, or tillage (N2H (7). The wafer is then exposed to the process gas in operation 130. The conditions in the reactor are such that the ruthenium containing compound reacts with the oxidant or other reactants, if present. The reaction mechanism may involve an absorption reaction, a hydrolysis reaction, a condensation reaction, a polymerization reaction, a gas phase reaction of a gas phase product which produces condensation, condensation of one or more of the reactants before the reaction, or a combination of such reactions. 160970.doc -15- 201237994 As shown in the operation, a flowable film is thus deposited on the round surface. The wafer is exposed to a period of time during which the process gas is sufficient to allow the flowable film to fill the gap. In some embodiments The deposition method forms a soft, gel-like film with good flow characteristics to provide a coherent filling. In this paper, for the purposes of discussion (4), the deposited film can also be described as having liquid flow characteristics. a glue, a liquid film or a flowable film. The film mechanism can vary depending on the particular reaction; for example, a flowable film can be formed in the gap or formed in the field surrounding the gap and flowing into the gap, or a combination of such conditions The processing conditions in the reactor allow the reaction product to condense on the surface of the reactor rather than on the surface of the wafer. During the deposition phase of the process (steps 13 and 140), the wafer may or may not be exposed to the electricity. And in some embodiments, the wafer is brought into the chamber under "dark" (ie, non-plasma conditions). Although not indicated on the flow chart, but the gaseous state can be continuously extracted from the reaction chamber. Byproducts The substrate temperature can be between about -20 ° C and about 10 ° C. In some implementations, the substrate temperature can be between about -20 t: and about 30 ° C, such as at _1 〇 (: Between 1 and 〇. In some implementations, a higher substrate temperature may be experienced, for example, a chemical vapor deposition method may be used that requires heating the substrate to a temperature of from about 200 ° C to about 400 ° C. The chamber pressure may be about Between 0 Torr and approximately 600 Torr; in some cases, cavity The pressure can be between 500 mTorr and 200 Torr, and in some other cases, the chamber pressure can be between 10 Torr and 100 Torr. At the reaction temperature, in terms of component vapor pressure, the gas component is treated. The partial pressure characteristics may be Pp (partial pressure of reactants) and Pvp (vapor pressure of reactants). Examples are: former 160970.doc 201237994 Drive partial pressure ratio (pp/pvp) = 0.01 to 1 (for example, 0.01 to 〇5); oxidant partial pressure ratio (pp/pvp)=0.25 to 2 (for example, 〇.5 to 1); and solvent partial pressure ratio (Pp/Pvp)=(^1 (for example, o.UD. reactant) Examples of the partial pressure range are: oxidant: precursor partial pressure ratio 013. Called coffee / 1 > 1) heart (^ coffee) = 1 to 3 〇 (for example, 5 to 15), and solvent: oxidant partial pressure ratio (PpsQ |vent/ppQxidant)=() to 1 〇 (for example, 0.1 to 5). Those skilled in the art will recognize that values outside of these ranges may be used in accordance with the application. After the flowable film has been deposited in the gap, the deposited flowable film is thickened in one or more operations in operation 15 . The deposited film may be completely or partially eutectic. The post-deposition densification treatment operation may involve one or more operations, and any or all of these operations may also involve chemical conversion of the as-deposited film. In other embodiments, any or all of the thickening operation can be thickened without chemical conversion. In some embodiments, a conversion operation may be performed alone, or no conversion operation may be performed at all. If performed separately, the conversion operation can be performed before or after the thickening operation. In one example, the film is partially and thickened by exposure to a reactive plasma and then thickened by thermal annealing in an inert environment. In some embodiments, the thin mash is converted by exposure to a plasma containing one or more of, for example, oxygen, nitrogen, helium, argon, and water. The film can be thickened at this point of operation and chemically converted to a ceria, tantalum nitride or hafnium oxynitride network as needed. In some embodiments of the flowable thin film deposition method, the flowable dielectric film is in the deposited state as a thin film of hafnium oxide (or other desired network) and does not require conversion after deposition. Figure 1 provides an example of a flowable gap fill process; the system provided herein is configured and can be configured for use with other flowable gap fill processes. For example, although the process of Figure 1 is a single cycle deposition/thickening process, in other embodiments, a multi-cycle process is performed. In other embodiments, a dielectric film such as a SiO film and a Si 〇 N film is formed. Examples of flowable gap-filling processes that can be used in accordance with the present invention include those described in U.S. Patent Nos. 7, 〇74,69, pp; 7,524,735; 7,582,555 and 7,629,227; U.S. Patent Application Serial Nos. 1 1/834,581, 12/334,726, '12/566, 〇85, 12/964,110, 61/421,548, and 61/421,562, Patents and patent applications are incorporated herein by reference. The systems and devices described herein can also be used in accordance with any suitable flowable gap filling method. Moreover, in some embodiments, the systems and devices described herein are not limited to the particular processes described herein, and can be used in other processes such as integrated circuit fabrication, flat panel display manufacturing, and the like. The flowable gap fill process presents a challenge (if any) that is rarely encountered in other semiconductor processes. For example, the flowable gap fill process involves the intentional formation of liquid condensation within the process chamber. The devices and systems described herein maximize condensation on the substrate being processed and minimize condensation anywhere else in the chamber. In some embodiments, this situation involves active thermal management in the processing chamber and equipment. Apparatus and systems for thermal management of a flowable gap-fill reactor are described in further detail below. Another challenge encountered during the "X dynamic gap fill procedure is to manage the process gas to prevent premature condensation or deposition. For example, the flowable gap fill reactant can be mixed during the gap fill operation to produce the appropriate chemical reaction for the gap fill I60970.doc 201237994 charge treatment. Premature mixing of the reactants can result in the formation of particles within the system, which can be problematic if the particles contaminate the treated wafer or impact the wafer surface and cause damage. If the mixed reactants are not maintained at a sufficiently high temperature, the mixed reactants may form condensation which may result in undesirable deposition inside the reactant delivery system or may cause the droplets to be violently discharged into the reactor, which may Causes damage to the treated substrate. Apparatus and systems for reactant management and isolation in a flowable gap-fill reactor are also described in further detail below. A further challenge encountered during the flowable gap fill procedure is the control of the reactant stream on the wafer. During flowable gap filling, the condensed reactant mixture flows across the substrate being processed and toward the perimeter of the substrate. This situation can result in deposits that are larger toward the edge of the wafer and on the slope of the wafer than deposition of the wafer. Apparatus and systems for mitigating such behavior, such as 'configuration for introducing purge gas around the periphery of the wafer,' are also described in further detail below. In the definition of ...μ, the terms "substrate", "semiconductor wafer", "wafer" and "partially manufactured integrated circuit" will be used interchangeably. Those skilled in the art will understand that the term "partially manufactured integrated circuit" may refer to a stone circle during any of a number of stages in the fabrication of an integrated circuit on a Shi Xijing circle. = Γ Description It is assumed that the invention is implemented on a wafer. However, the present invention has a size and material. In addition to semiconductors such as printed circuit boards: other workpieces of the present invention contain various articles, 160970.doc -19 201237994. The integrated circuit is fabricated by subjecting the semiconductor wafer to various processing stages. Although many wafers are circular in shape, the wafers can have other shapes. In this application, the "axial" direction of the wafer refers to the direction parallel to the ~ axis in the circular wafer. The "axial" direction of a non-circular wafer will refer to a similar direction, i.e., orthogonal to the flat surface of the wafer. The "radial" direction refers to the direction of the radius of the circle of the circle, i.e., substantially parallel to the flat surface of the wafer and intersecting the central region of the circle. As used herein, the term "r HDP oxide film" refers to a doped or undoped dioxide film deposited using a high density email DP) chemical vapor deposition (CVD) process. In general, a high-density electricity is any plasma having an electron density of at least 1 x 10 electrons/cm 3 , although the plasma range can be 5 x 10 〇 electrons / cubic centimeter and 1 χ 1 〇 1, electrons / cubic (four) between. In certain embodiments, the HDp-CVD reaction can also be characterized by relatively low reactor pressures in the range of 100 mTorr or less. As used herein, the term "flowable oxide film" is a flowable doped or undoped dioxide (IV) having a flow characteristic that provides a coherent filling of the gap. Also, the flowable oxide film is described as a soft gelatinous film, a gel having a liquid flow characteristic, a liquid film or a flowable film. Unlike HDP-CVD, the formation of a flowable film involves reacting a cerium-containing hydrazine with an oxidizing agent to form a condensed flowable film on the substrate. For example, as described in U.S. Patent No. 7,629,227, the disclosure of which is incorporated herein by reference in its entirety in its entirety, the &lt The flowable oxide deposition method described herein is not limited to a specific reaction mechanism', for example, the reaction mechanism may involve an absorption reaction, a hydrolysis reaction, a condensation reaction, a polymerization reaction, and a gas phase product that produces condensation. Phase reaction, condensation of one or more of the reactants prior to the reaction, or a combination of such reactions. The substrate is exposed to a period of time during which the process gas is sufficient to deposit a flowable film to fill or partially fill at least some of the gap. The deposition process typically forms a soft, gel-like film with good flow characteristics that provides a consistent fill. In certain embodiments, the flowable film is an amorphous organic tantalum film. The as-deposited HDP oxide film is a thickened solid and is not flowable, while the deposited flowable oxide film is not fully thickened. Under deposition conditions, at least for a certain time, the flowable film generally flows. Depending on the particular method and chemical reaction, the flowable oxide film can be soft (e.g., scratchable) or hard once the wafer is removed from the deposition conditions. As described above, the deposited flowable film can be thickened and/or chemically converted. The term "flowable oxide film" may be used herein to refer to a flowable oxide film which has been thickened or cured by a solidified flowable oxide film and a deposited flowable oxide film which have been wholly or partially solidified. Tool Horizontal Integration of Flowable Gap Filling In this paper, a semiconductor manufacturing tool including one or more flowable gap fill modules is provided. 2A depicts an example tool configuration 200 in which the tool includes two high density plasma chemical vapor deposition (HDP-CVD) modules 210, a flowable gap fill module 220, a PEC 230, and a WTS (wafer transfer system) 240. And vacuum pre-extraction chamber 250, in some embodiments, includes a wafer cooling station. The HDP-CVD module 210 can be, for example, a Novellus SPEED MAX module. The flowable gap fill module 220 can be, for example, a Novellus Integra module. The PEC module 230 can be, for example, a Novellus pedestal electrostatic chuck (ESC) cover mold 160970.doc • 21 - 201237994 group. The WTS module 240 can be, for example, a Novellus WTS Max module. Some tool level implementations feature a flowable gap fill module that can be used for multiple processing steps. For example, a flowable gap fill module can also be used to perform in situ pretreatment followed by a flowable oxide deposition process. This scenario may allow for the tooling of multiple flowable gap fill modules (e.g., four such modules). The alternate example tool configuration 260 depicted in FIG. 2B includes a wafer transfer system 295 and a vacuum pre-extraction chamber 290, a remote plasma curing module 270, and a flowable gap fill module 280. Additional remote plasma curing module 270 and flowable gap filling module 280 may also be included to increase tool throughput. Other modules that can be used for pre- or post-treatment include Novellus SPEED or SPEED Max, Novellus INOVA Reactive Pre-Cleaning Module (RPM), Novellus Altus Extreme Fill (EFx) Module, Novellus Vector Extreme Pre-Processing Module (for electricity) Poly, UV or IR pretreatment) and Novellus SOLA (for UV pretreatment), and Novellus Vector or Vector Extreme. These modules can be attached to the same backbone as the flowable gap fill module. Flowable Gap Filling Module Overview A processing module for performing flowable gap filling can include many components, subassemblies, systems, and subsystems. The following paragraphs discuss the main components and systems of the embodiment of the flowable gap fill processing module 300 shown in Figure 3 - the deposition of the flowable film on the itb® wafer occurs within the reactor 310. Reactor 310 can also be referred to as a reaction chamber, a processing chamber, or a chamber. 160970.doc -22- 201237994 Many or all of the gases and/or liquids used during the deposition procedure are supplied to the reactor 310 from the gas delivery system 320. While this system is referred to herein as a "gas delivery system," it should be understood that liquids, aerosols, or vapors may be supplied or treated in addition to or in lieu of a gas' gas delivery system. Gas delivery system 320 can include a flow control hardware 340 (such as valves, degassers, vaporizers, heaters, etc.) that processes reactants and chemical sources 33〇 or such sources, processing reactants, and chemical delivery. And a gas delivery controller 350 for controlling the flow control hardware 340 » In the present application 'unless otherwise noted, the term "reactant" will be used to refer to a gas, liquid or to a crystal Other flowable materials in the round reactor. In this case, the reactants may also contain inert carrier gases that are not chemically involved in wafer processing. While the inert carrier gas does not participate in the wafer processing reaction in a direct chemical manner, the presence of an inert carrier gas can affect the partial pressure of the reactants in the wafer processing reaction, which can affect the condensation behavior of the reactants. For example, increasing the inert carrier gas stream while maintaining other gas flows and keeping the reactor pressure ambiguous will result in a reduced partial pressure of the reactant stream' which will reduce the reaction rate of the reactants. After delivery to reactor 310, the reactants can be dispensed across the surface area of the wafer by a manifold called a showerhead. The showerhead 36 is introduced into the reactants in the desired amount, the reactants are introduced into the desired location, and the reactants are introduced at the desired pressure for processing. The volume of space substantially between the wafer and the showerhead is referred to herein as the "reaction zone." After introduction to reactor 301, the reactants can be confined to the reaction zone by the use of a skirt that forms a mechanical barrier to the reactant stream. 160970.doc 23· 201237994 The wafer is axially supported by the chuck. The chuck can also include techniques to prevent lateral movement of the wafer during processing. The chuck can be supported by the base 370. The pedestal 37 can be configured to move the chuck and the wafers in the axial direction of the wafer for wafer loading and loading and for use in the wafer using the susceptor driving unit 3 8 晶圆deal with. The chuck can be cooled by the chiller system during processing. The chuck and base 370 can also interface with an insulating ring that helps protect the chuck and base from undesired processing. 4A-4E depict simplified views of a flowable gap-fill module reactor that highlights different processing operations. The particular structure in one of Figures 4A through 4E may not be numbered in all of the figures to reduce visual clutter. It is expected that the reader will assume that the components labeled with a particular number will be referenced in the figures, and that the drawings showing the same components use the same number. For example, the reactor 4 in Figure 4 will also be referred to as reactor 4 in the discussion of Figures 4B through 4E, although it may not be labeled in the figures. For purposes of illustration, FIGS. 4B-4D depict the reaction of the ruthenium reactant 442 and the p-reactant 444 and the deposition gas mixture 446 discussed below in the reaction zone of the reactor 400 as a plume with a well defined boundary or Clouds, such depictions are only intended to indicate the introduction or presence of such gases and should not be construed as describing the actual physical behavior of such gases in the reaction zone. For example, although the sink gas mixture 446 is depicted as occupying only a portion of the reaction zone and is depicted as being tumbling out into only a portion of the internal volume of the reactor 400, the deposition gas mixture 446 may extend substantially throughout the reactor 4 All of the reaction zone and the inner zone of the crucible are substantially uniformly diffused, or may diffuse throughout the reaction zone and internal volume of the reactor 160970.doc -24 - 201237994 400 but at different densities. Figure 4A illustrates a simplified embodiment of a flowable gap fill module reactor 400. The chamber housing 402, top plate 404, skirt 406, showerhead 408, base post 424, and seal 426 provide a sealed volume for flowable gap fill processing. Wafer 410 is supported by chuck 412 and insulating ring 414. Chuck 412 includes an RF electrode 416 and a resistive heating element 418. The chuck 412 and the insulating ring 414 are supported by a base 420 including a pressure plate 422 and a base post 424. The base post 424 passes through the seal 426 to interface with a base drive (not shown). The pedestal column 424 includes a platen coolant line 428 and a pedestal purge line 430. The shower head 408 includes a weir inflator 432 and a P inflator 434 fed by a helium gas line 436 and a P gas line 438, respectively. The helium gas line 436 and the P gas line 43 8 .420, and 420 may be heated in the zone 440 before reaching the showerhead 408, and the 420 is referred to in the lower (420) and raised (420,) positions. . The flowable gap fill processing module 3 can include leveling features that allow the flowable gap fill processing module 300 to be leveled after installation. The flowable gap filling process involves liquid flow and can therefore be particularly sensitive to gravity. For example, if the flowable gap fill processing module 3 is slightly tilted to one side, the deposited flowable thin media will tend to migrate toward the "downhill" side of the wafer plane. This situation results in larger deposits on the downhill side and smaller deposits on the "uphill" side. 4 To prevent this flowable film behavior, the flowable gap fill processing module 300 can be leveled relative to the Earth's gravity. / In the total reference pedestal level, the level of the level is included to further: the whole: round thousand faces. For example, the initial transit time can be performed when the module is installed, which can be attributed to, for example, thermal expansion, assembly, 160970.doc -25 - 201237994 force, assembly difference at the wafer level There is drift in degrees. These offsets from the level of the wafer plane can be resolved by not having to re-adjust the base leveling features of the entire module. The gas delivery system module is equipped with or coupled to a gas delivery system 32 () for delivering reactants to the reactor 310. The gas delivery system 32G can be supplied to the reactor 31 by using - or a plurality of oxidants (including water, oxygen, ozone, peroxides, alcohols, etc.), which can be supplied separately or in combination with an inert carrier gas. As used herein, a component designated for oxidant treatment is indicated by the "〇" prefix to indicate 0. In a particular embodiment, the '0 reactant contains hydrazine (or other inert gas), oxygen, water, hydrazine, and ethanol. Gas delivery system 320 may also be supplied to reactor 310 using one or more dielectric precursors (e.g., triethoxy decane (TES)), which may be supplied separately or in admixture with an inert carrier gas. In this document, the component specified for precursor processing is indicated by the "p" front 辍. In a particular embodiment, the P reactant comprises TES, hydrogen, helium, and nitrogen. The P reactant may also comprise a catalyst, such as a ruthenium-containing precursor. In some embodiments, the reactant that is chemically oxidizing may be delivered with a P reactant rather than with a ruthenium reactant; under such conditions, components and systems having a p prefix will also process the particular ruthenium reactant and p reactant. For example, a 0 reactant (such as ethanol) can be delivered by a P reactant delivery route. Delivery of ethanol by the P reactant delivery route may also facilitate matching the flow state between the other ruthenium reactants and the reactants of 160970.doc -26-201237994 p after introduction of the reactants into the reaction zone in reactor 310. In certain embodiments, the gas delivery system is also configured to deliver one or more cleaning agents (e.g., nf3) for pre-deposition and post-deposition reactor cleaning. In certain embodiments, the gas delivery system is additionally configured to deliver one or more post deposition reactants. For example, argon, nitrogen, oxygen or other gases may be delivered for post-deposition plasma treatment. Each reactant can be supplied to the gas delivery system 320 by direct connection to a facility source (eg, a facility water or gas source) or by a reagent containing an amount (connected to a gas delivery system 320. Gas delivery system) 320 can include fittings and hardware 340 for connection to such reactant sources. Each reactant can be delivered to reactor 310 by separate gas lines, such as 0 gas line 436 and p gas line 438. A reactant gas line can be connected to one or more reactant sources 3 3 0 ' and each reactant source 3 3 〇 can be passed through a degasser, filter, mass flow before being introduced into its respective gas line Controllers, vaporizers, pressure transducers, pressure regulators, and/or temperature sensors. Some reactant gas lines may contain additional components, while some reactant gas lines may contain or not include such components. The NF3 gas line can use a mass flow controller, while the argon gas line can use a flow restrictor. The ampule for the reactant can be pressurized with a gas (such as helium) to force the reaction. From the ampoule to the gas delivery system 320. By introducing the gas into the ampoule, the ampoule headspace is moved and the reactants contained within the ampoule are displaced. The reactants are then driven into the gas delivery system line 436 or 438. The gas delivery system 320 can be designed to minimize the processing of reactants and chemistry. The gas transport volume between the source 3 30 and the reactor 31 ^ can, for example, remove unnecessary bends, fittings Or other volumes. Similarly, the gas delivery system 32A can be designed to minimize the transport time of the reactants by the gas delivery system 320 to the reactor 310. For example, a gas branch or turn can be provided for the gas line, Allowing the gas flow rate to ramp up to the desired flow rate through the branch ^ When the gas has reached the desired flow rate, the gas can be switched from the branch to the reactor feed line. In this way, it can be compared to during the flow ramp cycle The gas is introduced into the reactor 3 10 at a flow rate closer to the desired flow rate when the gas is introduced into the reactor 3 〇. This situation can help ensure that when it is desired The desired amount of gas is introduced into the reactor 320 during the interval. The gas delivery system 320 can utilize a high accuracy/low response time valve or other flow control device in the flow control hardware 34. For example, the ρ gas line 438 can A valve that reaches 90% of the gas flow rate within 0.05 s after opening the command of the valve executed by the gas delivery controller 35. The gas delivery system 320 can be included for transmission to the reactor 310 via the reactant gas line. One or more preheating devices are previously heated. One or more preheating devices for the reactant gas line may be located adjacent to or collocated with the vaporizer for the reactant gas line. The preheating device may The vaporized reactant is configured to be heated to a desired temperature level after vaporization and before the gas exits the gas delivery system 320 and is delivered to the reactor 310. The preheating device can be configured to heat the reactant gas to a temperature between 50 ° C and 250 ° C (eg, 50 ° (: to 150 ° C). For example, the ethanol reactant can be after vaporization and Preheating to 150 ° C prior to introduction to the gas line to reactor 31 〇I60970.doc -28- 201237994. In some embodiments, 'process the components of each of the one or more reactants The wet surface may be preheated to a temperature at which the pressure at the delivery system of the reactants is above the dew point of the reactants and at least 10 C below the decomposition temperature of the reactants. In other embodiments, one or more of the treatments are processed. The wetted surface of the components of each of the reactants in the reactants may be preheated to at least 20 above the dew point of the reactants at the pressure of the delivery system of the reactants, and at least 2 below the decomposition temperature of the reactants. Temperature of rc. If several reactants are mixed together and preheated as a mixture, the above rules can be applied using the dew point and pressure of the mixture. In addition to or in place of the preheating device, the reactant gas S line can also be used. Contains heat The heat is lost to provide heat to the reactant gas during transport from the gas delivery system to the reactor 310. For example, as shown in Figure 4. The P-knife 44G can't be wrapped around the gas delivery system and the reactor 3 The exposed gas line between the i〇 encloses the resistance heating blanket or sleeve. Alternatively, the gas line can be delivered to the outer sleeve by means of an external sleeve, and the heated fluid (such as water or oil) can be extracted or Delivered by Induction Heating Coils In some embodiments, the heating jacket is configured to maintain some or substantially all of the wetted interior surface of the gas line relative to the reaction described above The dew point of the object and the temperature at which the temperature is resolved. In addition, one or more gas lines may be separately heated and heated individually to the non-delivery system. Figure 5A illustrates the use of the illustrated module. Modular methods can be used to provide six possible modules in a gas gas delivery system 160970.doc -29. 201237994 to supply different types of reactants or other reagents, and to the manifold for supply when needed Reactants and P reactants. Some specific implementations of a modular gas delivery system suitable for use in a reactor, such as the reactors described herein, are partially illustrated in Figures 5B-5M. It will be appreciated that a non-module approach can also be used to construct a similar fluid delivery route to provide similar processing functionality. Figure 5A illustrates six possible gas supply modules a to ρ ^ each module can include configuration For the manifold outlet for connection to the gas manifold M <(Some modules may also include a steering outlet D that can be configured for connection to a steering line. In some semiconductor manufacturing processing steps, reactants can be delivered to the showerhead with a minimum ramp rate of flow rate. In an equal step, the flow from a particular gas source may first be directed to the steering line until the flow rate is stabilized at substantially steady state conditions. Once the steady flow condition is reached, the valve of the steering line A may be closed and the valve of the manifold outlet may be opened. The steady state flow is split to a gas manifold leading to the showerhead. Several steering lines can be joined together to form a steering manifold, and there can be separate steering manifolds for the helium reactants and P reactants. The manifold is passed to a volume separate from the reactor. Each module can also be configured to be preheated to deliver reactants to the helium outlet and (in some modules) the various components of the D outlet. Preheating the supplied reactants. This preheating can be done using a resistive heating blanket, heat exchanger or other heating technique. The preheatable components are located in the area marked with intersections and hatching in Figures 5Α to 5。. The assembly can be heated to a temperature between 5 (TC and 250 〇c (eg, 5 〇{>c to 150C), and for each module, different preheating temperatures can be used. Module A can be configured to The gaseous reactants (for example, 〇2, h2, 160970.doc · 30· 201237994 NF3, Ar, He, etc.) are supplied to the shower head. Module A may include the module A gas source 501 and the module A mass flow rate. The controller 5 〇 2. The module a gas source 5 〇 1 can be connected to the module A mass flow controller 501 via a gas line and a coaxial inlet valve. The second gas line and the coaxial outlet valve can control the mass flow of the module a The 501 is connected to the manifold outlet μ. The module A does not include the steering outlet D and can be used to deliver non-time critical gases. The components of the module A downstream of the module A mass flow controller 502 can be pre-as needed when needed. Module B is similar to module A' but includes steering functionality. Module b can include module B gas source 503 and module B mass flow controller 504. Module B gas source 503 can be powered by gas The pipeline and the coaxial inlet valve are connected to the module b mass flow controller 504. The second gas pipeline and the coaxial outlet The valve can connect the module b mass flow controller 504 to the manifold outlet μ. The third gas line and the accompanying coaxial outlet valve can also fluidly connect the module mass flow controller to the steering outlet d. The module does not include Turning to outlet D, and thus can be used to deliver a timing critical gas. Module Β is not used in any of the example gas delivery systems shown in Figures 5A through 5L, but can be used in a module The delivered gas replaces the specific module A for timing criticality. The components of module B downstream of the module B mass flow controller 504 can be preheated as appropriate. Module C can be configured to be supplied by the carrier gas The vaporized reactant module C can include a module c liquid source 505 and a module C gas source 506. The module C liquid source 505 can be fluidly coupled to the module c liquid flow meter 507 by a fluid line and a coaxial valve. The module C liquid source 505 can, for example, contain water, solvent or another liquid reactant. The liquid flow meter 507 can be fluidly coupled to the module C vaporizer 509 by another fluid line and coaxial valve. Module C Gas Source 160970.doc -31- 201237994 5 0 6 can be fluidly connected to the module by the gas line and the coaxial valve. Mass flow controller 508 » Module C gas source 506 can contain, for example, Ar4He. The module C mass flow controller 508 can also be fluidly coupled to the module c vaporizer by a gas line. The liquid flowing from the module C liquid source 505 can be vaporized in the module vaporizer 509 and entrained in the gas stream from the module c gas source 5〇6. The module C vaporizer 509 can be fluidly coupled to the manifold outlet port and the steering outlet D in much the same manner as the module B mass flow controller 5〇4 is in fluid communication with the manifold outlet port and the steering port D. The downstream components of module C vaporizer 5〇9 and module c may be preheated as needed. If optional preheating is used for module C, module C liquid source 505 and module c liquid flow meter 507 may not be preheated to allow a more accurate amount of liquid to be supplied. The use of the carrier gas from module C gas source 506 not only facilitates the delivery of vaporized liquid reactants to the showerhead, but also facilitates vaporization of the liquid reactants by evaporation of some of the liquid reactants. This situation may allow the use of liquid reactants having a higher boiling point. The absence of a device that can significantly reduce the gas flow downstream of the module c vaporizer 509 can correspondingly result in no significant pressure drop downstream of the module c vaporizer 509, which can reduce the likelihood of condensation. The use of steering functionality allows module c to deliver vaporized liquid reactants to the showerhead without startup delay or instability. Module D can be configured to supply vaporized reactants without the use of a carrier gas. Module D can include a module D liquid source 510 that is fluidly coupled to module D liquid flow controller 511. Module D liquid flow controller 511 is in turn fluidly connectable to module dizer 512. The module 〇 vaporizer 512 can be fluidly coupled to the manifold outlet Μ and the steering outlet D in the same manner as the module b mass flow controller 504 and the manifold outlet M and the steering outlet D are fluidly coupled to each other in the manner of 160970.doc -32· 201237994. Module D liquid source 5 10 may, for example, contain a solvent, precursor or other liquid. As with the module, the downstream components of the module D vaporizer 512 and module D can be preheated as needed. As with module C, if optional preheating is used for module D, module D liquid source 5 10 and module D liquid flow controller 511 may not be preheated to allow for more accurate metering of the supplied liquid. Module D may also allow for a more undiluted delivery of the supplied liquid vapor. This is because the carrier gas is not present to dilute the vaporized liquid. The absence of a device that can significantly reduce the gas flow downstream of the module D vaporizer 512 can correspondingly result in no significant pressure drop being found downstream of the module D vaporizer 5 12 'which reduces the likelihood of condensation. The use of steering functionality allows module D to deliver vaporized liquid reactants to the showerhead without startup delay or instability. Module E, similar to module D, can be configured to supply vaporized reactants without the use of carrier gases. Module E can include a module E liquid source 513 that is fluidly coupled to module E vaporizer 514 via a fluid line and a coaxial valve. The module E vaporizer 5 14 can be fluidly coupled to the module e mass flow meter 515 by a gas line. The module E mass flow meter 515 can then be in fluid communication with the manifold outlet port and the steering port D in much the same manner as the module B mass flow controller 504 is in fluid communication with the manifold outlet port and the steering port D. If the module Ε uses optional preheating, both the module Ε vaporizer 514 and the module Ε mass flow meter 515 can be preheated, but the module Ε liquid supply 513 can be preheated. This situation allows the vaporized liquid to be delivered without being diluted by the carrier gas and allows the vapor to be metered after vaporization and preheating have occurred. 160970.doc -33- 201237994 Module F can be configured to supply one or two vaporized liquid reactants by carrier gas. The module F can include a module F first liquid source 516, a module F second liquid source 5 18 and a module F gas source 5 17 . The module F first liquid source 5 16 can be fluidly coupled to the module F first liquid flow controller 5 19 via a fluid line and a coaxial valve. The module F first liquid flow controller 5 19 can be fluidly coupled to the module F evaporator 522 via a fluid line and a coaxial valve. Similarly, module F first liquid source 518 can be fluidly coupled to module F second liquid flow controller 521 via a fluid line and a coaxial valve. The module F second liquid flow controller 521 can also be fluidly coupled to the module ρ evaporator 522 via a fluid line and a coaxial valve. The module F gas source 5 17 can be fluidly coupled to the module F mass flow controller 520 via a gas line and a coaxial valve. The module F mass flow controller 520 can also be fluidly coupled to the module F evaporator 522 via a gas line. Module F evaporator 522 can be fluidly coupled to manifold outlet σ and to outlet outlet D in much the same manner as module B mass flow controller 504 and manifold outlet M and steering outlet D fluid connections. Module F can optionally be configured to preheat module F evaporator 52 2 and downstream components. Module F first liquid source 516 and module F second liquid source 518 can each contain different liquids. For example, module F first liquid source 516 can contain a first precursor, and module F second liquid source can contain a second precursor different from the first precursor. Figure 5B depicts an implementation of a gas delivery system featuring a module for providing a ruthenium reactant in a ruthenium partition 527 and a module for providing a P reactant within the P partition 528. In the 0 partition 527, the module C 539 contains the liquid h2〇 in the module C liquid source 505 and 160970.doc •34- 201237994 gaseous He in the module c gas source 5〇6, module A (0 partition 530 contains gaseous He in module A gas source 501, module A 531 contains gaseous enthalpy 2 in module A gas source 501, and module A 532 contains gaseous NF3 in module A gas source 501. In the P partition 528, the module A 533 contains the gaseous H2 in the module A gas source 501, the module A 534 contains the gaseous state n2 in the module A gas source 501, and the module A (P partition) 535 is in the module A. Gas source 501 contains gaseous He, and module E 536 contains liquid solvent in module E liquid source 5 1 3 'module E 537 contains liquid first precursor in module E liquid source 5 13 ' and module E 538 contains a liquid second precursor within module E liquid source 513. The 〇 steering line 523 and the P steering line 524 can be coupled to the steering outlets of the modules in the 〇 section 527 and the P section 528, respectively. The manifold outlets from module C 529, module A 530, module A 531, and module A 532 can be connected to a common manifold, which is coupled to the dual-flow showerhead 526 by a valve. Similarly, the manifold outlets from module A 533, module A 534, module A 535, module E 536, module E 537, and module E 538 can be similarly connected to a common P-manifold, common p-disambiguation The tube is connected to the dual flow shower head 526 via a valve. The reactants delivered to the dual flow showerhead 526 can be further heated in zone 525 during transfer to dual flow showerhead 526. The components within zone 525 can be heated to a different temperature than the temperature used for preheating. For example, the components within the 'partition 525 can be heated up to 150. (: temperature, but a typical preheating temperature may be about 1 〇〇. 虽然. Although only one of the lines from the 〇 subzone 527 to the dual flow showerhead 526 is shown and only shown from the P partition 528 to the dual flow showerhead 526 One of the pipelines, but in some implementations, there may be a plurality of such pipelines extending from one or two of these zones to the dual flow jet 160970.doc • 35· 201237994 sprinkler 526. For example, if two precursors For use in p-zone 528, each of which has different temperature or pressure requirements for vaporization without decomposition, it may be desirable to prevent mixing of the two precursors until they are introduced into dual-flow showerhead 526. The precursor can be separated, for example, using a physically separate gas line to the dual flow showerhead 526. For chemically aggressive precursor species, the corresponding modules for such gas lines and for gas delivery systems are selected. The materials of the various components in the assembly can be selected to minimize corrosion of the precursor to the assembly. Figure 5C depicts a gas delivery system implementation that is largely similar to the gas delivery system shown in Figure 5B. The module C 539, the module A 540 and the module A 541 replace the module C 529, the module A 530 and the module A 535 respectively. The module C gas source 506 of the module C 539 'module A 540 Module 8 gas source 501 and module A gas source 501 of module A 541 each contain Ar instead of He. Figure 5D depicts a gas delivery system implementation that is largely similar to the gas delivery system shown in Figure 5C, However, module E 536 is replaced with module D 542. Module D liquid source 5 10 of module D 542 may contain solvent. Figure 5E depicts a gas delivery system implementation that is also largely similar to that of Figure 5C. The gas delivery system is shown, but the module E 536 is replaced by the module C 543. The module C liquid source 505 and the module C gas source 506 of the module C 543 can respectively contain a solvent and Ar. Figure 5F depicts Another embodiment of a gas delivery system featuring a module for providing a ruthenium reactant in a ruthenium partition 527 and a module for providing a P reactant in the P partition 528. In the Ο partition 527, Module C 539 contains liquid HzO in mode C 970.doc • 36 · 201237994 Group C liquid source 505 and gas in module C gas source 506 He, module E 544 contains solvent in module E liquid source 513, module A (zone 0) 540 contains gaseous Ar in module A gas source 501, and module A 531 contains in module A gas source 501. Gaseous 〇 2 ' and module a 532 contains gaseous NF3 in module A gas source 501. In P partition 528, module A 533 contains gaseous H2 in module A gas source 501, and module A 534 is in module A gas source 501 contains gaseous N2, module A (P partition) 541 contains gaseous Ar in module A gas source 501, and module D 545 contains liquid first precursor in module D liquid source 510, and mode Group E 538 contains a liquid second precursor within module E liquid source 5 13 . Figure 5G depicts a gas delivery system implementation that is largely similar to the gas delivery system implementation shown in Figure 5C, but with module e 5 3 7 replaced with module D 546. Module D 546 can contain a liquid first precursor within module D liquid source 510. Figure 5H also depicts a gas delivery system implementation that is largely similar to the gas delivery system implementation shown in Figure 5C, but with module e 5 3 7 replaced with module C 547. The module c 547 can contain the liquid first precursor and the Ar gas in the module c liquid source 5〇6 and the module C gas source 505, respectively. Figure 51 depicts a gas delivery system implementation that is largely similar to the gas delivery system implementation shown in Figure 5F, but with module D 545 and module E 538 replaced with a single module F 548. The module F 548 contains a first precursor in the first liquid source 516 of the module F, a second precursor in the second liquid source 5丨8 of the module F, and Ar in the gas source 517 of the module F.

Figure 5J depicts a gas delivery system implementation that is largely similar to Figure 5C 160970. Doc-37-201237994 _ shows the gas delivery system implementation, but where module E 536 ' is removed from p-partition 528 and in module 527, module C 539 is replaced with module F 549. The module F 549 can contain H2〇 in the first liquid source 516 of the module f, and the solvent in the second liquid source 518 of the module F, and in the module! Gas source 517 contains Ar. Figure 5K depicts a gas delivery system implementation that is largely similar to the gas delivery system implementation shown in Figure 51, but with module C 5 3 9 and module E 544 replaced with a single module F 549. Module ρ 549 in the module? The first liquid source 5 16 contains HzO, the module ρ the second liquid source 5 丨 8 contains a solvent, and the module F gas source 517 contains Ar. Figure 5L depicts a gas delivery system implementation that is largely similar to the gas delivery system implementation shown in Figure 5j but with the module Ε 5 3 7 replaced with module C 547. Module c 547 as discussed in Figure 5A may contain a liquid first precursor and an Ar gas. Figure 5M depicts the gas delivery system of Figure 5L, but with an additional Ar source that can be used to purge the steering line of the steered reactant. The various valves depicted in Figures 5A through 5B can be opened or closed as needed to supply the 0 reactants and ρ reactants to the dual flow showerhead 526 during various stages of wafer processing. The reactor module contains a reactor 400, which is also referred to as a reaction chamber, chamber, and the like. Reactor 400 acts as a sealed environment in which a flow gap filling process can occur. In many embodiments, the reactor 4 is characterized by a radially symmetric interior. Reduce or eliminate the deviation from the radially symmetrical interior 160970. Doc -38· 201237994 helps to ensure that the flow of reactants occurs radially on the wafer 410. The interference with the reactant stream caused by radial asymmetry can result in more or less deposition than in other regions. The deposition on some areas of the wafer 410 can produce undesirable changes in wafer uniformity. Reactor 400 contains several major components. Structurally, the reactor 4 can include a chamber housing 402 and a top plate 404. The top plate 404 is configured to attach to the cavity outer casing 402' and provide a sealed interface between the chamber casing 4〇2 and the gas distribution manifold/spray head, electrode or other modular device. The different top plates 4〇4 can be used for the same chamber housing 402 depending on the particular equipment requirements of the process. The chamber casing 402 and top plate 404 may be mechanically machined from aluminum (e.g., 606 1·Τ6), but other materials may be used, including other varieties of aluminum and other non-aluminum materials. The use allows for easy machining and handling, and makes it possible to utilize the high thermal conductivity properties of aluminum. The top plate 404 can be equipped with a resistive heating blanket to maintain the top plate 4〇4 at a desired temperature. For example, the top plate 404 can be equipped with a resistive heating blanket configured to maintain the top plate 4〇4 at a temperature between 4 and TC (other than a resistive heating blanket or as an alternative to a resistive heating blanket). An alternative heating source can be used, such as circulating the heated liquid through the top plate 404, or supplying a resistive heating crucible to the top plate 404. The chamber housing 402 can be configured to maintain the chamber housing 4〇2 at a desired temperature. The lower resistor heats the crucible. For example, the chamber housing 4〇2 can be equipped with four resistance heating crucibles, which are located at each of the four corners of the chamber. Figure 6 is a simplified plan view This configuration is illustrated. In Figure 6, reactor 600 contains internal pores defined by the sealed processing environment "Ο I60970. Doc 39-201237994, chamber 6H); chamber 610 can be configured to have fine holes in the corners to accommodate the resistive heating crucible 630. The ohmic control resistor can be used to heat £630 in response to the temperature measured by a thermal resistance device (RTD) 64 or other temperature monitoring sensor. Two RTDs 640 can be located on opposite sides of the chamber 61, where each RTD 640 is located between the nearest two resistors. Feedback from the rtd 640 can be used to control the temperature of the resistor to heat up the chamber 63i and the chamber 6i. Other temperature control systems can also be used, such as circulating a heated fluid through the pores in the chamber wall. The resistance heating crucible 630 can use the chamber wall temperature during the flowable gap fill process to control the temperature between 4 (TC and 8 (TC). In some implementations, the top plate 4G4 may not include heating elements and, instead, rely on The chamber resistance heats the S630 heat conduction heat to maintain the desired temperature. Various embodiments may be configured to control the temperature of the interior walls of the chamber and other surfaces that are not required to be deposited, such as the pedestal, skirt, and showerhead, to about 1 Torr. (: to a temperature of 4 ,, which is higher than the target deposition temperature. In this case, the components can be maintained at a temperature higher than this range. By maintaining the reactor 400 The temperature is maintained at a high temperature by the temperature that is actively heated during processing and the internal reactor wall can be maintained relative to the wafer fingers; the wafer temperature is described in more detail later. The temperature of the internal reactor wall is raised relative to the wafer temperature Condensation can be minimized or eliminated on the inner wall of the reactor 4GG. If condensation of the reactants occurs on the inner wall of the reaction II4GG, condensation can form undesirable on the inner wall. Deposited layer. In addition to or instead of the heating chamber of the heating chamber housing 402 and / or the top plate 404 I60970. Doc -40· 201237994 Outdoor shell 402 and/or top plate 404, which can apply a hydrophobic coating to reactor 400 and other components having a wetted surface, such as substrate 42〇, insulating ring 414 or platen 422 Some or all of the wet surface to prevent condensation. This hydrophobic coating is resistant to processing chemical reactions and processing temperature ranges (eg, 40 C to 80 C processing temperature range). Some hydrophobic coatings, such as polyethylene, which are dominated by Shixi and fluorocarbons, may not be compatible with oxidizing (e.g., 'plasma) environments and may not be suitable for use. Nano-based coatings with superhydrophobic properties can be used; these coatings can be ultra-thin and can also have oleophobic properties in addition to hydrophobicity, which allows the coating to be prevented from being used in flowable films Condensation and deposition of many reactants in the deposit, such as Tes, ethanol, and water. An example of a suitable superhydrophobic coating is titanium dioxide (Ti02). In one embodiment, the reactor 400 can be implemented by tilting the bottom plate. For example, the bottom plate of reactor 400 can be a conical surface rather than a planar surface. The reactor bottom plate can be tilted such that any condensate deposited on the reactor bottom plate flows toward the outer outer inner edge of the reactor 400. Alternatively, the reactor bottom plate can be tilted to direct this condensate towards the center of the reactor 4〇〇. The drain port can be included in any location where this condensate is collected. In some implementations, the planar tilt of the reactor floor can be used instead of the cone tilt; however, the cone tilt can reduce the manufacturing complexity of the reactor 4 compared to planar lift. Reactor 400 can also include a pressure sensor configured to measure pressure during reactor processing operations in reactor 400. For example, the pressure sensor can be mounted on the inner wall of the reactor 400, the recess I60970 in the inner wall of the reactor 400. Doc •41 201237994, and/or on the outside of reactor 400. If the pressure sensor is mounted on the exterior of the reactor 400, a pressure monitoring port can be provided to allow the pressure sensor to be fluidly connected to the interior of the reactor 400. If a pressure monitoring port is implemented, the pressure monitoring port can be configured to have a spindle, a spindle Horizontal or inclined such that the spindle is at its lowest point where it intersects the inner wall of the reactor 400. In this way, the condensate formed in the pressure monitoring port is forced out of the pressure monitoring port by gravity. The pressure sensor can also be heated individually to prevent condensate formation and affect the pressure sensor. The pressure sensor can be configured to measure pressure at one or more locations within the reactor 400. For example, the force sensor can be configured to be located at a plurality of locations around the diameter of the reactor 400 and at the base 420 in the raised position as shown by the base 420, in the showerhead 408 and the crystal A pressure measurement is obtained at a vertical position between the circles 410. The pressure sensor can also be mounted at a height substantially coincident with the plane of the wafer 410 as the wafer 410 is undergoing a deposition process. The reactor pressure sensor provides a pressure reading in the reaction zone during wafer processing. These pressure readings can be used to verify that the pressure gradient around the perimeter of the reaction zone is relatively uniform. Pressure readings can also be used to verify that the process pressure is within the processing parameters. Pressure sensors can also be used in closed loop control implementations where the output velocity of the reactants is adjusted in response to feedback from the pressure sensor. For example, if the pressure in the reaction zone measured by the pressure sensor indicates that the desired reaction zone pressure will not be maintained, the reactant outlet flow rate may be reduced to counteract the pressure drop (or if the reaction zone pressure exceeds the desired reaction zone pressure) increase). Such reductions and increases in variable outlet flow rates can be used (e.g., variable angle throttles (such as butterfly valves)). 160970. Doc • 42· 201237994 The angle of the throttle plate of the valve can be adjusted based on feedback from the pressure sensor. Pressure sensors with different sensitivities can be used to allow accurate measurements over a wide range of pressures. For example, a '100 Torr pressure gauge and a 10 Torr pressure gauge can be used to allow accurate pressure measurements at high pressures and low pressures. Reactor 400 may also include a vacuum source flow path or other means for drawing air from reactor 400 and inducing a reactant stream across wafer 410. For example, reactor 400 can include a series of radially configured ports that are fluidly coupled to a vacuum source. The radially configured port can be located on the bottom surface of the reactor 4〇〇. The ports can be evenly spaced and can each have substantially the same size. The radially configured port can be integrated into a removable baffle that can be mounted over a substantially annular passageway present in the bottom surface of the reactor 400. The annular passage can be part of the vacuum source flow path and can include a radial recess to provide a fluid flow connection to the vacuum source flow path. One embodiment of the removable baffle and lower annular passage in reactor 400 can be seen in Figures 7A-7C. FIG. 7A depicts a removable baffle 7〇1 that includes an annular region 703 and a radially extending region 705. The removable baffle 7〇1 contains 24 evenly spaced holes 7〇7. Hole 7〇7 can be 〇225" in diameter, and "T know·supply, force 0. The total cross-sectional flow area of 9 5 square feet, but the diameter of the hole 7 〇 7 can be from Q. G85, to Q 3", and the holes 707 of the given removable baffle should be of the same nominal size. The hole 7 () 7 can be maintained at a strict diameter tolerance (such as ± 〇. 001 ") to minimize flow asymmetry. An additional two -9 can be provided to facilitate assembly of the removable raft 7 〇 1 to the reactor 711; the reactor 711 provides similar functionality to the reactor 400. 160970. Doc • 43- 201237994 Reactor 711 can include an annular channel 713 and other features. The annular passage 713 can include a radial recess 715 that fluidly connects the annular passage 713 with the vacuum port 717. The annular passage 713 can have 1. The nominal cross-sectional area of 5 square feet; the cross-sectional area of the annular passage 713 may be larger, for example, near the radial recess 715. These features can be observed in Figure 7A. Figure 8 depicts a diagram for a radial flow profile such as the embodiment described above with respect to Figures 7A through 7C. Three scenarios are depicted: in the absence of a removable plate, the removable baffle contains 24 diameters of 0. 225,, the hole shape and the removable baffle contains 24 0. 3" The situation of the hole. For each case, 'the flow of fluid representing the process flow is simulated and the normalized flow results are obtained for the point around the perimeter of the wafer in the flow path. This is due to the fact that the pair is used to display data only for one and a half of the total wafer perimeter. As can be seen, for the case of a non-removable baffle, the flow around the perimeter of the wafer changes from an average perimeter flow of 92% to an average perimeter flow of 11 3%. For a removable baffle with a 〇 225 ” diameter hole, the change is about ° 4 ° /.; for the 〇 3 " diameter hole, the change is about 1. 9%. It is also possible to have other configurations of the removable baffle. For example, the removable baffle 701 can include a different number of holes 7〇7 and/or different diameter holes 7〇7. The annular passage 713 is not limited to a toroidal shape and may be implemented using other shapes (e.g., a straight passage or a C-shaped passage rather than a passage through a full circle). The removable baffle 701 can also be fabricated to substantially surround two or more of the susceptor drive posts when installed in the reactor 711. Embodiments of the removable baffle 701 can feature a total cross-sectional flow area wherein the total cross-sectional flow area of the removable baffle and the radial cross-section of the annular passage 713 are 160970. Doc 201237994 The ratio of flow areas is approximately 1:1 ο but the specific configuration can vary. Vacuum port 717 can be coupled to a vacuum source (not shown) that is configured to draw a vacuum or partial vacuum in reactor 711. The variable angle throttle can be inserted between vacuum port 717 and the vacuum source; the variable angle throttle can be used to vary the extent of suction provided via vacuum port 717. Figure 7C shows a cross-sectional view of reactor 700. The annular passage 713 is visible as visible to the removable baffle 70!. The annular passage 713 is fluidly coupled to the vacuum port 717. The reactor 400 may also include a remote source σ9()1, remote (four) port as shown in the embodiment t of the reactor 9 shown in FIG. 9〇ι can be used to introduce the plasma treatment gas into the reactor 4〇〇. For example, the remote destructive source port 81 can be provided as a means for introducing a residual or cleaning gas, such as (d), into the reaction zone without the need to dispense an etch or cleaning gas through the showerhead. The end plasma source port 81 can also be used to deliver a hydrogen-oxygen inert gas mixture that can be used to calm nf3. The etching gas is supplied by the member instead of the showerhead 408, allowing the showerhead 4〇8 to be dedicated to the deposition process and reacting In the case of reactor cleaning, there are two options to activate nf>3: direct plasma and remote plasma. In the case of direct plasma, if by spraying When the NF3 is delivered by the shower head, the plasma will be more uniform, which provides better repeatability. Sometimes, in the case where the area to be cleaned is at the outer edge of the base, it may not be necessary to use the entire sprinkler. The delivery, but alternatively, is delivered, for example, by the annular region of the showerhead near the perimeter of the wafer. In the case of remote plasma, the activity is delivered by the showerhead. 3 (mainly atomic F) is usually more than 160970. Doc -45- 201237994 Not needed 'Because atom F will recombine at any surface (such as inside the sprinkler), this reduces the cleaning rate. Highly reactive atoms F can cause damage to internal components of the gas distribution system, such as 〇 rings and valves. The gas distribution manifold/sprinkler module can include a gas distribution manifold or showerhead that promotes gas distribution across the wafer in a desired manner. In the flowable gap fill process, the showerhead 408 can be configured to deliver the oxidant and precursor to the reaction zone, respectively, to prevent mixing of the oxidant with the precursor prior to introduction of the reactants into the reactor 4 The oxidant and the precursor are allowed to mix, which forms a flowable film. If the flowable film is formed in the showerhead 408 prior to introduction into the reactor 4, the flowable film can interfere with the uniform distribution of the reactants by the showerhead 4〇8. For example, if a flowable film is formed in the showerhead 4'8, the film may partially or completely block some of the apertures described below. These apertures may be used to distribute the reaction across the surface of the wafer 41. Things. Such occlusion can result in uneven fluid flow across the wafer 410. Another concern is the formation of particles caused by the mixing of reactants. The particles can form and entrain in the reactant stream' and can contaminate the treated wafer or can impact the wafer surface and cause surface irregularities. The showerhead 408 is configured to provide dual flow gas delivery to the reactor 400. The dual flow showerhead 408 is configured to evenly distribute the oxidant and precursor across the reaction zone in the reactor via a separate delivery path. For example, dual flow showerhead 408 can include a helium inflator 432 and a P inflator 434. Each plenum can be connected to the reactor 400 via a plurality of flow paths (e.g., via a wafer-facing showerhead surface through a pattern of apertures in each individual plenum). Doc • 46 - 201237994 Fluid Connections As illustrated in Figure 4B, the ruthenium reactant 442 and the ruthenium reactant 444 distributed by the helium plenum 432 and the helium plenum 434 in the dual flow showerhead 408 are fluidly separated until they are Introduced into the reactor 4, at this time, the ruthenium reactant 442 and the ruthenium reactant 444 are mixed with each other to form a deposition gas mixture 446. The deposition gas mixture 446 flows across the wafer 4丨0 and flows into the larger internal volume of the chamber 400 by an annular gap between the base 420· and the skirt 406. The apertures for the aperture pattern of each individual plenum can be positioned to evenly distribute the individual reactants of the plenum across the treatment zone. The ankle inflator 432 can be fluidly coupled to the reaction zone via a meandering pattern of the ankle plenum apertures 448. Similarly, the 'p inflator 434 can be fluidly coupled to the reaction zone via a helium pattern of the bore portion 450. The diameters of the bore portion 448 and the p-pit portion 450 can be configured such that the average discharge velocity of the helium reactant 442 from the bore portion 448 is substantially equal to the ρ reactant 444 from the bore portion 45 0 The average discharge speed matches. The ruthenium reactant 442 and the ruthenium reactant 444 can be supplied to the showerhead 408 from the gas delivery system 320 at different volumetric flow rates. For example, the ruthenium reactant 442 can be delivered from the gas delivery system 320 to the sprinkler at a volumetric flow rate that is four times greater than the volumetric flow rate at which the ρ reactant 444 is delivered to the showerhead 408 during the flowable gas fill process. 4〇8. Accordingly, the ankle inflation portion 432 can include an ankle plenum aperture 448 having the same diameter as the ankle plenum aperture 450 in the ankle inflation portion 434, but including up to four times the ankle inflation aperture 448 of the ankle inflation aperture 450. Alternatively, the ankle inflator 432 may include the same number of ankle inflator holes 448 & p inflator apertures 450, but each of the ankle inflating portions 432 may have a larger diameter than the impeller discharge aperture 450 in the ankle inflation portion 434 The cross-sectional area is four times larger than the cross-sectional area. Also 160970. Doc -47· 201237994 Other configurations can be used such as adjusting the diameter/cross-sectional area of the plenum hole and the number of plenum holes for a given plenum. In some embodiments, the ratio of the total cross-sectional area of the bore portion 448 to the total cross-sectional area of the P-portion bore 45 is substantially equal to the volumetric flow rate of the oxidant reactant 442 and the volume of the precursor reactant 4 4 4 . The ratio of flow rates. In a particular embodiment, the showerhead 4 is characterized by a meandering pattern and a P pattern as shown in the figures. The hole pattern 1 shown in Figure 1 is developed for use with a dual flow showerhead. The dual flow showerhead is designed for TES + ethanol + 氦p reactants and vapor + hydrazine reactants and approximately 5 Torr. The total flow rate from sccm to 5 〇〇〇 sccm is used. The Ο pattern is characterized by 1456 pupils 1〇1〇 having a diameter of 〇 4〇吋. The p pattern is characterized by 1616 pupils 1 〇 2 具有 having a diameter of 0 019 。. The total cross-sectional area of the pupil pattern of the pupil 101 0 is about 吋83 square inches. The total cross-sectional area of the P-pattern of p-hole 1020 is about 〇46 square feet. The total ratio of the cross-sectional area of the p-pattern to the cross-sectional area of the 〇 pattern is about 丨:4. The pattern of the holes and the p pattern of the holes shown in FIG. 10 are all linear patterns in which the X direction and the Y direction are equally spaced; the 〇 pattern and the p pattern are offset from each other such that one internal hole pattern is diagonally located closest to the other pattern. The center between the four holes. Other hole patterns, such as hexagonal patterns, non-uniform linear patterns, circular patterns, spiral patterns, and patterns having intervals depending on the distance from the hole in the center of the wafer, are also contemplated. The plenum holes for the plenum can also be sized to prevent excessive mouth spray of reactants into the reactor. When the reaction stream from the showerhead resists the transition from the laminar flow state to the turbulent flow state, over-injection occurs, which may cause the reactant stream to be ineffectively mixed with each other before contacting the wafer 410. Doc-48, 201237994, or attributable to uneven pressure wavefronts in the reactants, results in the formation of pit or bowl features in the deposited flowable film. The flow rate of the reactants can be adjusted to produce a constant or nearly constant pressure wavefront at or near the surface of the wafer being processed. In general, the flow rate of the reactants, the number of plenum holes, and the spacing between the plenum holes and the wafer surface all contribute to the determination of the diameter of the plenum aperture. For example, the inflator flow hole can be sighed according to the following relationship.  L/D20· 112 Pe, where L is the mixed length (for example, the distance between the outlet of the inflator flow hole and the wafer) 'D is the distance between the flow holes adjacent to the inflator, and pe is the reactant stream ( Mass dispersion) Pelican number. The transport time of the reactants by the sprinkler plenum can be minimized to the extent that system responsiveness can be increased. In some embodiments, the sprinkler plenum volume should be less than 10% to 2% of the volume of the reaction zone. For dual flow showerheads, the residence time of the reactants within each plenum can be matched to ensure simultaneous delivery of reactants from the two plenums. For example, if the rhodium reactant flow rate is X times greater than the P reactant flow rate, the helium inflator can be X times larger in volume than the p inflator. For example, a sprinkler having a volume of 0 plenum that is four times larger than the volume of the p-inflator can be used in a system where the reactant flow rate is about four times greater than the zero reactant flow rate. Although a dual flow plenum is described herein, a single flow plenum can be used to dispense reactants across the wafer processing area. For example, the reactants can be supplied to the showerhead prior to introduction into the reactor and can be mixed in a single plenum. Although the dual flow showerhead can be used in the gas phase reaction at the pressure & temperature conditions in the showerhead, the single flow showerhead can provide an acceptable alternative in the sprinkler head in some processing situations. Pressure and temperature conditions make 160970. Doc -49· 201237994 The reactants do not react or react to a reduced extent. In addition, the single-flow showerhead can use β when the residence time of the reactants in the showerhead is short. Under these conditions, physical separation of the reactants may not be required to reduce the undesired deposition in the showerhead. The showerhead 408 can include a heating element or heat transfer path that can maintain the sprinkler temperature within acceptable processing parameters during the flowable gap fill process. For example, the showerhead 408 can be thermally coupled to the top plate 404, which can be mounted with a resistive heating blanket as discussed above. The resistive heating blanket can provide heat to the showerhead 408 via the top plate 404 and is configured to heat the showerhead 4〇8 between 40 C and 150 C, but in some configurations, the sprinkler can It is usually heated to about 100 °C. The showerhead 408 can thus be maintained at a high temperature relative to the wafer 410 being processed. By maintaining the showerhead 408 at a high temperature, condensation of the deposited gas mixture 446 within the showerhead 408 is prevented. In embodiments where the showerhead 408 is a single flow design, the heated showerhead 408 also prevents condensation of any deposition gas mixture 446 that may be present in the sprinkler plenum. The showerhead 408 can also include an RF electrode for creating a plasma environment within the reaction zone. The susceptor 420 can also include an RF electrode for creating a plasma environment within the reaction zone. These plasma environments can be created using capacitive coupling between the supply electrode and the ground electrode; the supply electrode that can be coupled to the plasma generator can correspond to the RF electrode in the showerhead 408. The ground electrode can correspond to the pedestal RF electrode. Alternative configurations are also possible. The electrodes can be configured to produce at 13. RF energy in the 56 MHz range, 27 MHz range, or more generally between 5 kHz and 60 MHz. In some embodiments, multiple electrodes may be provided. These electrodes are each configured to generate RF energy in a particular frequency range. Doc -50- 201237994 Quantity. In embodiments where the showerhead 408 includes a supply electrode, the chuck 412 can include or act as a grounded RF electrode. For example, chuck 412 can be a grounded aluminum plate, which can result in enhanced cooling across the susceptor-chuck-to-wafer interface because of the higher thermal conductivity of aluminum relative to other materials, such as ceramics. The aluminum sheet may also allow for the machining of cooling passages in the back of the aluminum sheet to allow liquid coolant to circulate within the chuck 412; such passages may cause cracks in the ceramic sheets due to thermal expansion stress. This will be discussed later in the following. Including the RF electrode in the shower head 4〇8 with the ground electrode can also result in a lower ion attack on the wafer. Figure 7 illustrates an embodiment of a reactor 700 featuring a showerhead 708 that is assembled to a top plate 704. A resistive heating element 709 is embedded in the recess on top of the showerhead 708 and can be used to heat the showerhead 7〇8. Although the above embodiments discuss a chuck featuring a grounded aluminum plate RF electrode, other embodiments of the chuck may not include an RF electrode integrated with the aluminum chuck. Skirt or Occlusion Skirt 406 or covering (hereinafter referred to as "sleeve") can be used to provide a mechanical barrier to the reactant stream within reactor 400. The interface between the skirt 406 and the pedestal 420. can limit the deposition of the gas mixture 446 out of the reaction zone in the radial direction. The interface may constitute an annular gap wherein the outer diameter is defined by the inner diameter of the skirt and the inner diameter is defined by the outer diameter of the base 420. The annular gap for a typical crystal circle can be 0. 112'1 and 0. Between 125", where 0. The nominal gap size of 125" is used to have 14. The 25"inner diameter skirt" pedestal 420' and skirt 406 can be configured such that the relative position of the base 420' relative to the showerhead 408 can be changed from a deposition configuration to a clean or plasma processing configuration. And vice versa, not 160970. Doc •51· 201237994 Change the cross-sectional flow area of the annular gap. The skirt 406 can cause back pressure to be generated in the reaction zone by this flow restriction. The skirt 406 should not be confused with the obstructions in the other semiconductor fabrication procedures used to form the hermetic seal with the base 42A. The skirt 406 can also be used to confine the plasma to the reaction zone during the plasma treatment in the reactor. Although the flowable fill gap process does not require plasma during the flowable gap fill operation, the plasma can be used in cleaning, pre-deposition processing, after-gap post-treatment, curing, or other operations. The skirt 406 can also be used to adjust the size of the plasma by varying the back pressure in the reaction zone. The skirt 406 can also affect the heat flow in the reactor 400. The skirt 406 can be made from a ceramic material. If the plasma treatment also occurs within the reactor 4, the skirt 406 can also be made of a dielectric material. The skirt 4〇6 can be heated by the use of heating elements placed in the skirt 406 and/or by heat conduction from the top plate 4〇4 or other components that are conductively coupled to the skirt 406. Skirt 406 can be configured to heat to a temperature between 4 〇 (>c and 8 〇 during the deposition process. Because skirt 4 〇 6 is not required to be used with pedestal 420 during flowable gap filling) The contact seal is formed so that the skirt 4〇6 can be maintained relative to the base 42 and the sa circle 410 is maintained at south temperature without transferring conduction heat to the susceptor 4 2 〇 and the wafer 410. The skirt 406 can It is configured to be assembled to the top plate 404 or disposed in the top plate 4〇4 and may provide an interface for assembling the showerhead 408. Various embodiments use alternative assembly configurations. For example, 'spray head 408 and skirt 406 can be assembled directly to the top plate 408 without directly interfacing with each other. In a particular embodiment 160970. Doc • 52· 201237994, the skirt 406 may be integral with the showerhead 408 or with the top plate 4〇4 and may not be obvious components. The pedestal pedestal 420 provides axial support to the wafer during processing via a chuck discussed later. The pedestal 420 can be configured to rise and fall during processing (as indicated by the pedestal 420') to facilitate loading and unloading of different processing stages or wafers 41. The pedestal 420 can also provide power for sparking the plasma. The susceptor 42A may also provide cooling and/or heating capabilities for controlling the temperature of the chuck 412 and wafer 410 during processing. During the movable/μ gap filling process, the pedestal 42 可 can be positioned such that the wafer 410 疋 is located about 12 mm below the shower head 4 〇 8 . The skirt configuration, the base 420' size and the base 42〇 relative to the skirt 4〇6, the position may define an annular base flow region between the base 42 and the skirt 406. The back pressure in the reaction zone can vary with the flow area of the annular susceptor, the volumetric flow rate of the reactants, the pressure increase due to the chemical reaction, and environmental conditions. In various embodiments, the susceptor 4201 is positioned during the flowable gap fill process such that the back pressure in the reaction zone is maintained at about Torrento. After the flowable gap fill process, the pedestal 42A can be repositioned to create a larger annular gap for rapid back pressure release or for wafer processing. In a particular embodiment, the susceptor 42 can be repositioned continuously or at intervals based on time or arrival of the reaction zone pressure set point during deposition. Wafer 41/sprinkler during flowable gap fill processing The 4〇8 spacing may be greater or less than mm, depending on other parameters, such as the size of the base 420' or the size and location of the skirt 406. 160970. Doc • 53· 201237994 During plasma processing (such as during a wafer cleaning operation), the susceptor 420 can be positioned such that the wafer 410 is positioned about 25 mm below the showerhead 408. In preparation for cleaning, the susceptor 408 can be repositioned relative to the susceptor 408 for use in the flowable gap fill process to facilitate rapid discharge of pressure from the reaction zone. The base 420 can include a platen 422 or substrate, a drive post 424, and a drive mechanism (not shown). The platen 422 or substrate (hereinafter referred to as "platen") may be a circular substantially flat surface. Platen 422 can serve as an interface for chuck 412 that is configured to receive wafers 41 for processing. Or in some processes, the wafer 410 can be placed directly on the platen 422. The drive post 424 provides axial support to the platen 422 and can be configured to translate the platen 422 within the chamber housing 402 along the central axis of the chamber. The drive post 424 can protrude through the cavity to the bottom plate of the outer casing 402 and is coupled to the drive mechanism. Seal 426 can seal the interface between chamber housing 402 and drive column 424 to prevent fluid flow between reactor 400 and the external environment. The drive mechanism is configured to translate the drive post 424 and the pressure plate 422 in a vertical direction (i.e., toward or away from the showerhead 4〇8). The base 420 can include features for cooling or heating the chuck 412 that is assembled to the platen 422. For example, the susceptor 42A can include a coolant circuit 428 that circulates the cooled coolant from the outer 4 chiller through the platen 422. Other configurations may direct coolant circuit 428 to pass through, for example, chuck 412. The coolant circuit 428 can be increased by a heater (not shown) (e.g., a resistive heating element) that can be used to raise the temperature of the platen 422. By using the chiller and heater, the time required to reach the desired temperature set point can be significantly reduced. For example, 160970. Doc -54- 201237994 If the wafer 410 needs to be cooled from 2 (TC to -5t:, a refrigerator with a set point of -5〇c can be used. However, if the cooler is used in combination with the heater, the cooling can be performed. Set to below -5. (: set point, this will speed up the cooling process. Once the -5 ° C mark is reached, the heater can be used to offset the chiller. For example, the chiller can have -20 ° C to +80 its set point, and / or configured to support -15. (: to +80. (: chuck setting point. In this way, the total time to cool the wafer to the desired operating temperature can be significantly reduced This reduces processing time and increases system throughput. Lower cooler set points can also be used to offset the heat imparted to the cold platen by the autothermal wafer. In some embodiments, the chiller can be configured to have a higher than wafer processing temperature. Low It to 5 its set point. The heater (and/or chiller) can also be configured to heat the platen to greater than 70 eC during plasma processing (eg, 80 〇 to avoid plasma reactant condensation On the platen, pedestal, chuck or wafer. The heater (and / or cooler) can be configured Heating the platen or susceptor to a temperature between 3 ° C and 5 ° C (eg ' 40 ° C) to desorb the products and by-products of the adsorption reaction. Other components that can be in the chamber housing 402 and chamber A similar temperature is induced. The platen 422 and the skirt 406 can be designed to have tight concentricity tolerances. By maintaining a high degree of concentricity between the platen 422 and the skirt 406, at the skirt 406 and to the platen 422 The annular gap formed between the insulating rings 414 can be maintained at a near constant value about the perimeter of the insulating ring 414. This promotes uniform airflow across the wafer 410 and reduces unbalanced deposition. The concentricity of the platen 422 relative to the skirt 406 can be Reinforced by the use of a radial locator feature on the platen 422 that engages the skirt 406 to center the platen 422 radially relative to the skirt 406. When 160970. Doc-55·201237994 However, the 'radial positioner feature can also be positioned on the skirt 406 and interfaced with the pressure plate 422. Alternative embodiments may involve a radial mount on the pressure plate 422, a radial mount and a chamber housing 402. The sidewalls are engaged; if the skirt 406 is similarly equipped with a radial locator feature, the chamber housing 402 can serve as a common reference surface that can be used by both components to establish the same relationship. The latter configuration has the benefit of allowing the radial positioner feature to be displaced a certain distance from the annular gap formed by the skirt 4〇6 and the insulating ring 414, which is mitigated by the radial direction positioned near the annular gap of the platen The flow imbalance caused by the presence of the locator feature. The susceptor 420 can incorporate a purge gas supply 430 into the susceptor drive column 424 to prevent deposition, condensation, or icing within the susceptor 420, as shown in Figure 4C, 'purge gas supply 430 can purge gas 452, such as clean dry air (CDA) or nitrogen, circulates through the susceptor drive column 424; the purge gas 452 can also be heated to further inhibit condensation or ice formation within the susceptor drive column 424. Heating the interior of the susceptor drive post 424 with heated CDA or nitrogen can also be used to indirectly heat the exterior of the susceptor drive post 424, which also prevents condensation or icing on the outer surface. The pedestal 420 can also be configured to deliver a purge gas to the perimeter of the wafer 4''. For example, as shown in FIG. 4D_ (FIG. 4D depicts a variation of the embodiment depicted in FIGS. 4A-4C and 4E), purge gas $2 can be delivered to the dispensing system by pedestal column 424. The dispensing system evenly distributes the purge gas 452 from the lower side of the wafer 4 around the circumference of the dome 410. Purge gas 452 can thus be used to protect the surface of chuck 412 and insulating ring 414 from undesired deposition. Purge gas 452 can also be used to prevent increased deposition around the periphery of wafer 41. The scorpion sweep gas 452 can still be supplied to the pedestal drive column 424. Doc • 56 - 201237994, but this feature is not shown in Figure 4D. The chuck chuck 412 serves as an interface chuck 412 between the pedestal 42 〇 and the wafer 41 在 during wafer processing. The chuck 412 supports the wafer 41 in the vertical direction during processing. The chuck 4丨2 may also have features or techniques for confining the wafer 4 to the twist direction and preventing the wafer 41 from rotating relative to the chuck 412. In one embodiment of the invention, chuck 412 can be an electrostatic chuck (ESC) that can include a ceramic disk having embedded RF electrodes 416. The RF electrode 416 can be configured as a bias electrode and provide power to generate and maintain a plasma generated within the reactor 400. For example, RF electrode 416 can be configured to press 13. 65 MHz supplies 3 kW of electricity to the plasma produced in reactor 4〇〇. In this embodiment, the showerhead is grounded; in other embodiments, the ground is in the pedestal 424 having the powered showerhead 408. In configurations where the plasma is not used or power is supplied to other components, such as the showerhead 4〇8, the chuck 412 can include a grounded aluminum disk. The grounded aluminum disk can have higher thermal conductivity and allow for faster heating and cooling of the wafer 41 compared to other chuck materials during processing. Embodiments featuring a grounded aluminum chuck can simply integrate the grounded aluminum chuck into the assembly in the base 424. For example, chuck 412 and platen 422 can be an integrated component rather than a separate piece. This is due to the elimination of the interface between the two parts and will provide improved heat transfer than the early single chuck 412 / platen 42 configuration. The chuck 412 can have I60970 embedded inside the chuck 412 or attached to the chuck 412. Doc • 57· 201237994 Heating characteristics of the outer surface (such as electric resistance heater 418) ^ Chuck 412 may also include features for providing cooling, such as Peltier junction for coolant circulation for freezing. Or coolant flow path. These heating and cooling features may increase or replace the features mentioned above in the discussion of the pedestal. In some embodiments the 'cooling feature can be positioned in one component and the heating feature can be positioned in another component. For example, the chuck 412 can include a resistive heating element 418 embedded within a ceramic disk that includes the housing of the chuck 41 2 , and the platen 422 can include a coolant 454 configured to render the coolant 454 shown in FIG. 4E A coolant loop 428 that circulates below the interface surface between the disk 412 and the wafer 410. Coolant 454 can be used to cool platen 422 and cool chuck 412 via conductive heat transfer. The resistive heating element 41 8 can be powered to generate heat 456 directly in the chuck 412. Therefore, the chuck 412 can be heated and cooled. Coolant 454 can be recirculated from a remote chiller (such as the Thermaler 1200 from Solid State Cooling). The chiller can be assembled remotely from the base to reduce vibration in the susceptor assembly. The chiller can be configured to adjust the temperature of the coolant 454 based on feedback from a temperature sensing device positioned within the susceptor 420 or chuck 412. For example, the chuck 412 can be configured with one or more RTDs that provide feedback to the refrigerator regarding the current temperature of the chuck 412. The chiller can be used to increase or decrease the coolant 454 temperature, depending on the temperature feedback from the RTD. Positioning one or more RTDs within chuck 454 or in close proximity to chuck 412 (such as near platen 422/chuck 412 interface in pedestal 420) may improve cooling by relying on the configuration of the RTD in the chiller itself. The response time is almost 50. /〇. An alternative to using one or more chuck-mounted RTDs is to use a sensor that is well-known for the month b (for example, Lumasense infrared temperature 160970. Doc -58- 201237994). The use of a remote sensing device, such as a Lumasense thermometer, allows the temperature of the wafer 410, rather than the temperature of the chuck, to be used to control the refrigerator. Managing the temperature of the chuck 412 based on the reading of the temperature of the wafer 410 will result in a more accurate thermal control of the wafer 41. During wafer 410 processing, chuck 412 and/or coolant loop 428 may lower the temperature of wafer 410 to facilitate deposition of deposition gas mixture 446 on wafer 41A into a flowable gap fill material. For example, coolant circuit 428 can reduce the temperature of chuck 412 and wafer 410 to a set point of -5t: for flowable gap fill processing. The resistive heating element 41 8 can also be configured to heat the chuck 412 to substantially two temperatures. For example, the resistive heating element 41 8 can be configured to heat the chuck 412 to 80 ° C during the plasma cleaning operation to prevent condensation during the plasma cleaning operation. In some embodiments featuring purge gas delivery to the perimeter of wafer 410 (as previously discussed in the section describing the susceptor), the wafer can be deflected from the surface of the chuck using the actual support and blown The sweep gas can be introduced into the gap between the interface surface of the wafer 410 and the chuck 412. The pedestal can be configured to support the wafer 410 in a manner that minimally interferes with the flow of purge gas between the wafer 410 and the chuck 412. The purge gas can be introduced into the gap between the wafer 410 and the chuck 412 via a port located in the chuck 412. The perimeter purge gas delivery embodiment may also include features on the chuck 412, the insulating ring 414, or other susceptor 420 components that are characterized when the purge gas exits the zone between the wafer 410 and the chuck 412. Guide the purge gas flow. For example, the insulating ring 414 can comprise a circumference around the wafer 41 and has a slightly larger than the wafer I60970. Doc •59- 201237994 410 The outer diameter of the outer diameter of the projecting convex protrusion. In this embodiment, and in contrast to the large radial flow experienced by the purge gas between wafer 410 and chuck 412, the purge gas can generally be in the axial direction after reaching the perimeter of wafer 41〇. Flow in the direction. These embodiments can be used to reduce flowable film deposition at the periphery of wafer 41 (e.g., in the wafer bevel region or wafer side regions). Figure 7C, previously described, depicts the reactor 7A for a particular embodiment and the components that are assembled to the base 720. Coolant line 728 delivers coolant through base shaft 724 and platen 722 to chuck 712. Cooling passage 728 distributes coolant throughout chuck 712. The resistive heating element can also be embedded within 712, but is not shown in FIG. Insulation ring 714 surrounds chuck 712. Chuck 712 can include purge gas dispensing apertures 7丨9 disposed across the wafer support area of the chuck. The chuck 7丨2 can also be characterized by a support (not shown) that provides support to the wafer during processing and allows purge gas to flow toward the periphery of the processed wafer. Insulation ring base 420 may also include an insulating ring 414. Insulating ring 414 can be used to shield the surface of base 420 and chuck 412 from plasma formed during wafer processing. Insulation ring 414 also shields the surfaces of pedestal 420 and wafer 410 from unwanted deposition or condensation during wafer processing. Finally, the insulating ring 414 prevents the plasma from bowing toward the chuck 412 or RF electrode 416. The insulating ring 41 4 can be made of a material such as alumina, and can be formed into a circular shape. The insulating ring 414 can be fabricated to have a first inner diameter that is slightly larger than the outer diameter of the pressure plate 422 and a second inner diameter that is slightly larger than the diameter of the chuck 412. If the insulating ring 414 is used in the base 420, the edge of the insulating ring 414 or the table 160970. Doc • 60· 201237994 The face may define a boundary of the annular gap between the base 420 and the skirt 4〇6 as previously discussed. The base 420 is used to regulate the flow of gas through the deposition zone, and the concentricity of the insulating ring 414 and the skirt 406 will at least partially determine the flow uniformity through the annular gap. In such configurations, the dimensional tolerance of the insulating ring 414 must be tightly controlled, as when the insulating ring 414 is once mounted on the base 420, the position of the insulating ring 414 must be tightly controlled. One embodiment of the insulating ring may feature an annular ring of 14" diameter. The annular ring can be aimed at substantially zero. 5"To 6, the thickness of the annular ring is 11. The inner diameter of 5" to 12" is characteristic. The inner diameter of the annular ring can then be substantially zero. 25 to 0. The thickness of the annular ring of 375" is gradually increased to the diameter of I] to 13" Finally, the annular ring can be substantially 〇 625 " to 75, the thickness of the annular ring is gradually increased to substantially 13 " to 13 125" The diameter. The total thickness of the annular ring can be about 1. 375" to 1. 725". Other features (such as chamfers, small shoulders and fillets) and locator or index features may also be present. Alternative Reactors and Module Configurations The systems and structures disclosed above may also include other reactor or module configurations, such as reactors equipped for deposition and/or pre-deposition or post-deposition treatment of dielectric films. Or module comprising HDp_CVD reactor, PECVD reactor, sub-atmosphere & CVD reactor, any chamber equipped for CVD reaction, any chamber for PDL (pulse deposition layer), and equipped Chamber for CFD. Figures 1 through 13 are examples of modules or reactors that may be included in a tool configuration, such as the tool configuration shown in Figures 2A and 2B. Figure 11 shows a reactor or mold 160970 that can be used in accordance with certain embodiments of the present invention. Doc * 61 - An example of the 201237994 group. The reactor noo can be used as a deposition chamber, a processing and deposition chamber or as a stand-alone curing module. Reactor 1100 is suitable for use in dark (non-electrical destruction) or plasma enhanced deposition and processing (e.g., via capacitively coupled plasma). As shown, the reactor 1100 includes a processing chamber 1124 that encloses other components of the reactor and is used to house the plasma generated by the capacitive system. The processing chamber 1124 includes a nozzle associated with the grounded heater frame 112. . The low frequency RF generator 11 〇 2 and the 咼 frequency rf generator are connected to the mouth sprinkler 1114. The power and frequency are sufficient to produce plasma from the process gas (eg, 4 〇〇 w to 700 W total energy). In some implementations, the generator is not used, for example, for non-plasma deposition or processing. One or two generators can be used during the plasma processing step. For example, in a typical approach, the high frequency 1117 component is typically between 2 MHz and 60 MHz, and in the preferred embodiment, the component is 13 56 MHz. Within the reactor, wafer base 1118 supports substrate 1116. The susceptor typically includes a chuck for holding and transferring the substrate during and between the deposition and/or plasma treatment reactions, and the ejector or ejector pin chuck may be an electrostatic card that can be used in industrial and/or research applications. Disk, mechanical chuck or various other types of chucks. Process gas is introduced via inlet 1112. A plurality of source gas lines 111 are connected to the manifold 108. The gas may or may not be premixed. The temperature of the mixing bowl/manifold line should be maintained above the reaction temperature. A temperature of about 8 〇 t or more is usually sufficient. Properly installed valves and mass flow control mechanisms are used to ensure proper gas delivery during the deposition and plasma processing stages of the process. In the case where the chemical precursor is delivered in liquid form, a liquid flow control mechanism is used. The liquid is then heated to 160,970 before reaching the deposition chamber. Doc •62· 201237994 Vaporization during transport in a manifold above a flying point and mixing with other process gases” Process gas exits chamber (10) via outlet 1122. The vacuum pump core (eg, single or bipolar mechanical dry pump and/or turbo molecular millet) typically draws process gas and maintains the reactor by shutting down the loop controlled flow limiting device (such as a throttle or pendulum valve) Suitable for low pressure. Figure 12 is a simplified schematic illustration of a remote plasma processing module in accordance with some embodiments. Apparatus 1200 has a plasma generating portion 1211 and an exposure chamber 12〇 separated by a showerhead assembly or panel 1217. In the exposure chamber 12〇1, a platen (or platform) 1205 provides support for the wafer 12〇3. The platen 12〇5 is equipped with a heating/cooling element. In some embodiments, the platen 1205 is also configured for applying a bias voltage to the wafer 1203. A low pressure is reached via the conduit 1207 via a vacuum pump in the exposure chamber 12〇1. The source of the gaseous process gas supplies the gas stream to the plasma generating portion 1211 of the apparatus via the inlet 12〇9. The plasma generating portion 1211 may be surrounded by an induction coil (not shown). During operation, the gas mixture is introduced into the plasma generating portion 1211, the induction coil is excited, and the plasma is generated in the plasma generating portion 丨2丨丨. The showerhead assembly 丨2丨7 can have a applied voltage and terminate the flow of some ions and allow the neutral species to flow into the exposure chamber 1201. Figure 13 is a simplified illustration of various components of an HDp-CVD apparatus that can be used for pre-deposition and/or post-deposition processing and/or deposition of solid oxide materials, in accordance with various embodiments. As shown, reactor 13〇1 contains processing chambers 13〇3 that enclose other components of the reactor and are used to hold the plasma. In one example, the processing chamber wall is derived from aluminum, aluminum oxide, and/or other suitable materials. Doc -63· 201237994 made. The embodiment shown in Figure 13 has two plasma sources: a top rF coil 1305 and a side RF coil 1307. The top RF coil 1305 is a medium frequency or MFRF coil and the side RF coil 1307 is a low frequency or LFRF coil. In the embodiment shown in Figure 13, the MFRF frequency can range from 430 kHz to 470 kHz' and the LFRF frequency ranges from 340 kHz to 3 70 kHz. However, it is possible to have a device with a single source and/or a non-RF plasma source. In the reactor, the wafer base 1309 supports the substrate 1311. The temperature of the substrate 1311 is controlled by a heat transfer subsystem comprising a line 1313 for supplying heat transfer fluid. Wafer chucks and heat transfer fluid systems facilitate the maintenance of proper wafer temperatures. The high frequency RF of the HFRF source 1 3 1 5 is used to apply a bias voltage to the substrate 1 31 and draw the charged precursor species onto the substrate for pre-treatment or curing operations. Electrical energy from source 13 15 is coupled to, for example, substrate 1311 via electrodes or capacitive coupling. Note that the bias applied to the substrate does not need to be RF bias. Other frequencies and DC bias can also be used. The process gas "premixed or unpremixed gas is introduced via one or more inlets 1317. The gas or gas mixture may be introduced by autonomous gas ring 1321, which may or may not direct gas toward the surface of the substrate. The ejector may be coupled to the primary gas ring 13 2 i to direct at least some of the gas or gas mixture into the chamber and toward the substrate. Injectors, gas rings or other mechanisms for directing process gases toward the wafer are not present in certain embodiments. The process gas exits the chamber 13〇3 via the outlet 1322. Vacuum pumps typically draw process gas and maintain a suitable low pressure in the reactor. Although the HDp chamber is described in the case of pre-deposition and/or post-deposition treatment or curing, it is somewhere 160970. Doc •64.  In the embodiment of 201237994, the HDP chamber can be used as a deposition reactor for the deposition of a flowable film. For example, in thermal (non-plasma) deposition, such a chamber can be used without impacting the plasma. 14A-14Q depict various views and components of one example implementation of a reactor configured for flowable gap fill operations. Such a reactor can also be used in other non-gap filling flowable deposition processes. Figure 14A depicts a perspective view of reactor 1400 (without a top plate or showerhead installed). The reactor 14A includes a chamber 1401, a wafer support device 1420, and a lift mechanism 1402. The chamber 1401 can include, for example, two heater receptacles configured to receive heating elements for heating the chamber 14〇1. The wafer 14〇4 was also shown, and the wafer 1404 was implemented with a 300 mm diameter wafer. In general, although the components shown in Figures 14A-14Q are designed for use with 3 mm wafers, larger or smaller wafer sizes can be designed according to similar principles but resized to accommodate larger Or equipment for smaller sized wafers. The wafer support device can provide functionality similar to that provided by the pedestal 420 of Figures 4A-4E and can also be considered an implementation of the pedestal. Conversely, pedestal 420 can also be considered as one implementation of a wafer support device. Reactor 1400 can be used with any of the systems described herein (eg, gas distribution system, dual flow showerhead, RF power, vacuum source, wafer) Processing system, etc.) connection. Reactor 1400 can, for example, be configured to cool wafer 1404 to a temperature to promote flowable gap fill deposition on wafer 1404 while maintaining chamber 1401 and other components within reactor 14 Higher temperatures are used to inhibit deposition on non-wafer components, as discussed generally above. Figure 14 A to Figure The various aspects of the design shown in MQ are for managing wafer support devices 1420 160970. Doc -65- 201237994 and its components and wafer 1404 thermal environment. The design shown in Figures 14A through i4Q can, for example, be able to achieve less than 〇 across substantially the entire wafer 1404. 35 ° C or even less than o. The temperature of the pc changes while maintaining the wafer 14〇4 at a low temperature (eg, -10t to _5t), while maintaining the other components in close proximity to the wafer 14〇4 but not touching the wafer 1404. The circle 14〇4 is about 5°C high to the temperature of HTC. Figure 14B depicts a perspective cross-sectional view of reactor 14A, and Figure 14c depicts a cross-sectional view of Figure 14B from a side perspective view. Some smaller components (such as 〇-rings, fittings, fasteners, tubing, etc.) may not be shown or may not be displayed in their entirety to avoid undue visual clutter. Wafer 14〇4 may be supported by chuck 1422 of wafer support device 1420, which in turn may be supported by dielectric plate 1427. The area of the chuck 1422 that can support the wafer 14〇4 can be referred to as a wafer support area. The wafer support area generally corresponds to the top surface of the chuck 1422' but the top surface of the chuck 1422 can extend beyond the nominal diameter of the wafer 14〇4 and the wafer support area. In addition to the support chuck 1422, the dielectric plate 1427 can also support the dielectric ring 1426. The dielectric plate 1427 and the dielectric ring 1427 can be made, for example, from AhO3. Although dielectric plate 1427 and dielectric ring 1426 are shown as separate pieces, in some embodiments a single piece can be made. The dielectric plate 427 and the dielectric ring 1326 can be considered to have a "dielectric backplane" or an "external dielectric wall", whether it is a single component or a plurality of components. Dielectric plate 1427 and dielectric ring 1426 or equivalent structures are also considered and may be referred to as "dielectric interruption regions." The dielectric board 1427 can generally correspond to the dielectric backplane, and the outermost portions of the dielectric ring 1426 and the dielectric board 1427 can generally correspond to the outer dielectric walls. The dielectric plate 1427 can be supported by the outer casing 1429. The outer casing 1429 can be supported by the lifting mechanism 14〇2. Doc •66* 201237994 Column 1454 support. The outer casing 1429 can be made from aluminum (e.g., 6061 aluminum), and similar to the dielectric plate 1427 and the dielectric ring 1426' can include a bottom plate and an outer wall. The outer wall of the outer casing 1429 can be substantially cylindrical. In some implementations, the housing 1429 can also serve as a ground plane for RF energy used during processing. The bottom panel of the outer casing 1429 can be substantially planar' and can be joined to the outer wall along one of the edges of the outer wall. The outer casing 1429 can also include other components or portions that further define the overall shape of the outer casing 1429. The outer casing 1429 can provide some of the functionality provided by the pressure plate 422 of Figures 4 through 4E. For example, the outer casing 1429 can provide abutment to the chuck 1422 directly or indirectly. Housing 142 9 may also be referred to as a chuck housing. When the wafer support device 1420 is lowered by the lift mechanism 1402, the lift pin assembly 1428 can lift the wafer 1404 away from the chuck U22. 14D and 14E show a perspective and side cross-sectional view of the reactor 1401 with the wafer support device 1420 in a lowered position and the wafer 1404 lifted away from the chuck 1422 by the lift pin assembly 1428. Figures 14F and 14G show a perspective view and an exploded perspective view of the chuck 1422 (wafer 1404 is not shown). The chuck 1422 can be a multi-layer assembly and can include a purge channel plate 423, a cooling channel plate 1424, and a substrate 1425 that can be joined together to form a contiguous component. The purge channel plate 1423 provides support to the wafer 1404 and the guard ring 1421. The guard ring 1421 can be made of a dielectric material such as Al2〇3. The lift pin assembly 142 8 can be mounted in the chuck 1422. The chuck 1422 can be partially or completely coated to protect the chuck 1422 from corrosion during the plasma cleaning operation. This coating can be provided, for example, by electron beam deposition of yttrium fluoride (YF3) at 2 μηη 3 μιη. Chuck 1422 can be made, for example, from aluminum (such as 3 〇〇 3 aluminum) I60970. Doc -67- 201237994 成. The lift pin assembly 1428 can be made, for example, from a 1203 and can be held in place within the chuck 1422 by use of a 〇-ring or other compliant gripping mechanism. Chuck 1422 can have a larger diameter than the nominal wafer diameter of wafer 1404. For example, the chuck 1422 can extend in the radial direction beyond the edge of the wafer 1404 by 1 mm to 15 mm, or about 13 mm. Referring back to Figures 14B and 14C, various conduits can be guided to the underside of the chuck 1422 by the support posts 1454. For example, a coolant line (including a coolant supply line and a coolant return line) can be routed through the support column 454 and to the interface plate 1430, which can be hermetically sealed to the underside of the chuck 1422. To aid in understanding the various conduit interfaces within the chuck 1422, Figures 14H and 14J-140 provide various perspective and side cross-sectional views showing such interfaces. FIG. 14H depicts a perspective, non-planar cross-sectional view of reactor 1400. In Figure 14H, the reaction benefit 1400 has been cut along the plane of the centerline of the wafer support device 1420 and through the centerline of the coolant line 143 1 . In some implementations (such as the implementation depicted in Figure 14H), the cooling performance can be substantially independent of which coolant line 1431 is used to supply the coolant and which is used to return the coolant. However, in some other implementations, one coolant line 1431 may need to be designed as a supply line, and another coolant line 143 1 is designed as a return line to facilitate uniform cooling across the chuck 1422. The implementation shown in Figures 14A-14q is not characterized by heating elements within chuck 1422. Figure 141 depicts a cooling plate 1424 from various perspective views, including three separate perspective views. The cooling channels 1430 of the cooling plate 1424 can be formed by nested ^ shaped portions. The nested C-shaped portions can be generally aligned such that each c-shaped portion is "enemy 160970. The doc -68 - 201237994 open section is oriented in substantially the same direction. Each c-shaped portion may be coupled to another C-shaped portion by a bridging portion that joins one end of the C-shaped portion to the corresponding end of the other C-shaped portion. Some of the c-shaped portions may not be connected to the other C-shaped portions at both ends, and may alternatively have one end fluidly connected to the inlet or outlet corresponding to the coolant line 143A. These c-shaped portions may utilize the bridging portion to reach the inlet or outlet, or the c-shaped portion may simply position an end at the inlet or outlet. Cooling channel 1430 can, for example, have an approximately 〇. The nominal depth of 3" and the nominal width of 〇·45. 14J and 14B are respectively a perspective cross-sectional view and a side cross-sectional view of the wafer support device 142A along the plane of the center line of the alignment light pipe 1432 and the in-situ light pipe 1433. The calibration light tube 1432 can provide dual purpose functionality. For example, the calibration light tube 1432 can be positioned at the center of the wafer support device 142 〇 / chuck 1422 and used to assist in wafer 丨 4 〇 4 on the wafer The basis of the center on the device 1420 is selected. For example, a wafer transfer robot (not shown) can illuminate the top side of the wafer support device 1420. Light from this illumination can be reflected from the top surface of wafer support device 1420 back to the wafer transfer robot. However, since the calibration light tube 1432 is optically transparent, the amount of light reflected back from the top surface of the wafer deck device 1420 is reduced as light is incident on the center of the device. The wafer transfer robot can be equipped with a debt detector that measures the amount of reflected light. The wafer transfer robot can be configured to correlate the lower reflectivity regions to the center of the wafer support device 1420. The calibration diaphragm 432 can be covered by a sapphire window that fits into the purge plate 1423 and the cooling plate 1424. The additional functionality provided by the calibration tube allows the temperature monitoring system to be calibrated using the in-situ light tube 1433. Due to the low use in the method described in this article 160970. Doc -69· 201237994 Temperature, conventional non-contact temperature measurements (such as infrared temperature measurements) may not measure the temperature of the wafer just during processing. To obtain an in situ temperature profile for the temperature of the wafer 1404 during processing, it can be assumed that the temperature of the chuck 1422 at a point within the chuck bucket can be used to reliably and reliably estimate the temperature of the wafer 1404 at a given point in time. The in situ light pipe 1433 can provide a mechanism for obtaining this internal temperature measurement of the chuck 1422. The cartridge "" can be in thermal contact with the chuck "" (e.g., with the cooling plate 1424), and the in-situ light tube 1433 can provide an optical path for the light emitted by the phosphor disk 1434 to reach the spectral light sensor (not shown). Phosphor disc 1434 can emit light of different wavelengths depending on the temperature at which it is located, and such wavelength/temperature correlations can provide an accurate measure of the temperature of phosphor disk 1434 based on the wavelength of the emitted light. However, there may be some deviation in the temperature of the wafer 14〇4 when compared to the temperature obtained from the phosphor disc 1434. To quantify this deviation and correct for this deviation, a calibration wafer can be used to take the calibration measure. The calibration wafer is coated to allow temperature measurement via the optical sensor connected to the calibration light tube 1432. When the calibration wafer is used, the temperature measurement can be obtained using the in-situ light pipe 1433 and the calibration light pipe 1432. The difference observed between the two sets of measurements for the same environmental conditions can be used to correct the in-situ light pipe 1433 readings of the chuck 1422 associated with the wafer 1404 and obtain a more accurate estimate of the wafer 1404 temperature during processing. 14L and 14M depict, respectively, a perspective cross-sectional view and a side cross-sectional view of the wafer support device 142A along a plane passing through the centerline of the chuck 1422 and the purge gas line 1435. Two purge gas risers 1456 allow the purge gas supplied by the purge gas line 1435 to reach the purge gas inlet passage 1438 and by sweeping the gas spokes 1455 (not visible in Figures 14G and 14H, but 160970. Doc • 70· 201237994 A purge gas spoke 1455 is visible in Figures 14B and 14C) is assigned to the annular purge gas passage 1439. The purge gas functionality for this implementation is discussed in more detail later. 14N and 140 respectively depict a perspective cross-sectional view and a side cross-sectional view of the reactor 14A along a plane passing through the centerline of the chuck 1422 and the vacuum line 1457. Vacuum line 1457 can be fluidly coupled to annular vacuum passage 1437 via vacuum riser 1458. Although not shown in Figures 14N and 140, a number of small vacuum ports may fluidly connect the annular vacuum channel 丨 437 with the top surface of the chuck 1422 to allow vacuum assisted clamping of the wafer 14 〇 4 during a certain process. A circular pattern of such a vacuum port 1461 can be seen in Figures 14F and 14G. Figure 14P shows, for example, a detail side cross-sectional view of the sub-portion of the wafer support assembly shown in Figure 14f and wafer 14〇4. Figure 14q shows a further detailed side cross-sectional view of the edge region of wafer support device 1420 including guard ring 1421. The guard ring can have an inner diameter of about 2 mm greater than the nominal diameter of the wafer 14〇4. As is apparent from Figures 14P and 14Q, various thermal insulation zones can separate the various components of wafer support device 1420. As used herein, a thermally insulated zone refers to a physical separation (ie, a gap) between the parts that is sufficiently large to substantially prevent any gas entering between the parts via any gas trapped within the insulated zone. The heat transfer, but also sufficiently small, is sufficient to prevent substantial convective heat transfer between the parts via the gas. Parts that are in direct contact with or separated by a gap but are still sufficiently close enough to experience significant conduction heat transfer through any gas trapped in the gap across the gap may be referred to herein as being "thermally contacted" with each other. In the condition of the wafer selection device, it can reside in the heat insulation zone 160970. Doc 201237994 may be a process gas 'such as Ar, He or other gas supplied by a gas delivery system. The thermal barrier can be designed to account for the density of such gases in the ambiguous environment during wafer processing. For example, when ^ or ^^ gas fills the gap of the insulation zone and the gap is between 25 Torr and 75 Torr, the 〇〇15, or lower insulation zone can lead to non-negligible heat conduction between the two parts. . The term "insulation zone" can be used to refer to a portion of a component that, when assembled with another component, can represent one side of the insulation zone. Another component may have a corresponding insulating zone that forms the other side of the thermal insulation zone. For example, when the lower side of the dielectric plate 1427 can physically contact the outer casing 1429 across the first structural support region 1459, the remainder of the lower side of the dielectric plate 1427 as shown in FIG. 14p can be axially insulated. The zone M53 is offset from the outer casing. The first structural support zone 1459 can be a substantially annular zone having, for example, 4"inner diameter and 525" outer diameter. In some implementations, the first structural support zone can have less than a card. The outer diameter of the disk 1422 is about 50% of the outer diameter. The axial thermal insulation area 1453 between the outer casing 1429 and the lower side of the dielectric plate 1427 can be 0. 015 and 〇. Between the 〇5〇" and extending over the annular insulation zone on the two parts, the annular insulation zone has about 5. 25"The inner diameter and about 13. The outer diameter of 25". It will be appreciated that the specific thermal insulation values described herein with respect to the various thermal insulation zones shown in Figures 14p and 14Q may be different from other values that may effectively provide similar thermal management functionality. It is to be understood that a wafer support device design that achieves similar thermal management functionality by using a thermal insulation zone similar to the thermal insulation zones described herein but having different values is within the scope of the present invention. The region 1453 can be converted into a radially insulated region 145〇 between the cylindrical surface within the outer casing 1429 and the cylindrical surface outside the electric plate 1429, and can be I60970. Doc • 71, 201237994 Continuation between the cylindrical surface within the outer casing 1429 and the outer cylindrical surface of the dielectric ring 1426. The term "axial thermal insulation zone" is used herein to describe a thermal insulation zone that is primarily characterized by one or several gaps between components along a central axis that is substantially axially symmetric, and the term "radial. "Insulating zone" is used herein to describe an insulating zone that is primarily characterized by one or more radial gaps between such parts. The radial thermal insulation zone 145 〇 can have a relationship between 〇 , 15, and 0. The gap distance between 050". Another insulating zone that is apparent in Figure 14P is located between chuck 1422 and dielectric plate 1427 and dielectric ring 1426. The chuck 1422 can be in physical contact with the dielectric plate 1427 across the second structural support region 1460 as if the dielectric plate 1427 can be in physical contact with the outer casing 1429 across the first structural support region 1459. A portion of the chuck 1422 extending outward from the second structural support region 1460 can be separated from the dielectric plate 1427 by the axial thermal insulation region 1452, and the axial thermal insulation region 1452 is converted into a cylindrical surface and a cylindrical surface outside the chuck 1422. A radial thermal insulation zone 1447 between the cylindrical surfaces within the electrical plate 1427. The axial thermal insulation zone 1452 and the radial thermal insulation zone 1447 between the chuck 1422 and the dielectric plate 1427 can have a relationship between 〇 15 " and 0. The gap distance between 050". The axial thermal insulation zone 1452 can extend across the annular insulation zone on the dielectric plate 1427 and the chuck 1422, and the annular thermal insulation zone can have about 5. 25" the inner diameter and about 12. 75" outer diameter. In addition to the insulating region separating the dielectric ring 1426 and the dielectric plate 1427 from the outer casing 1429 and the chuck 1422, other thermal insulation regions may be present between the other components shown in Figures i4p and 14Q. For example, the guard ring 1々a 1 can be about 0. 015" to 0. The 500" axial thermal insulation zones 1446 and 1449 and the radial thermal insulation zone 1448 are thermally separated from the outer casing U29 and the dielectric ring 1421. Despite entity 160970. Doc • 73· 201237994 is supported by chuck 1422, but guard ring 1421 can be largely separated from chuck 1422 via gap 1444 and radial thermal insulation region 1445, which in some implementations can be between about 15 microns and 25 microns. . The guard ring 1421 can be spaced apart from the chuck 1422 by a plurality of cylinders 1442 projecting from the underside of the guard ring 1421, and the cylinder 1442 rests within a corresponding recess 443 in the top surface of the chuck 1422. Although there is physical contact between the guard ring 1421 and the chuck 1422 via the cylinder 1442 and the receiving recess 1443, this physical contact can be very limited (eg, two small diameter cylinders) and by the cylinder 1442 to the card The conduction heat transfer in the disk 1422 can be correspondingly negligible. In addition to, for example, the cylinder 442, the guard ring 142 1 can be substantially axially symmetric. In addition, the guard ring 〖42丨 can have a lower thermal mass than many of the other components in the wafer support device 1420, which reduces thermal inertia, that is, other with the wafer support device 丨42〇 The heat can flow very quickly within the guard ring 1421 compared to the assembly. This rapid thermal flow within the guard ring 1421 permits a high rate of convective heat transfer from the guard ring 1421 to the surrounding environment. During processing, reactant gases may flow across the wafer 1404 toward the wafer perimeter and over the guard ring. These gases can remove heat that has been transferred from chamber 14〇1 to guard ring M2! by this convective heat transfer and carry heat away from wafer 1404. With the combination of convective heat transfer and minimal heat transfer described above, chuck 1422 can receive a negligible amount of heat from guard ring 1421 during processing. Although wafer 14〇4 can be protected from thermal offset by heat transfer from guard ring 1421 described above and, for example, in the features and geometries illustrated in FIG. 14Q, wafer 1404 It can also be susceptible to local hot spots or cold spots on the chuck 1422, which can result in a less uniform i I60970 across the wafer 14〇4. Doc -74- 201237994 Temperature distribution. To help protect the wafer 1404 from this possible temperature deviation across the surface of the chuck 1422, the wafer 1 404 can be offset from the surface of the chuck 1422 by using a pattern of small bumps or bumps 1441. The protrusions 1441 can be between 15 microns and 250 microns (about 0.0006 " to 001" high and the wafer 1404 can be offset from the chuck 1422 by a corresponding amount. The protrusions 1441 can, for example, have a diameter of 0. 010" to 0. Between the 050" and the concentric radiation pattern configuration to provide distributed support of the wafer 14〇4 across the entire span of the wafer 1404. The overall pattern of protrusions 1441 and protrusions 1441 is also visible in Figures 14F and 14G; a total of 96 protrusions 1441 are shown. Other patterns having different numbers, protrusion diameters or sizes, and protrusion heights can be used. Annular purge gas passage 1439 and purge gas distribution orifice 1440 are also visible in Figures 14P and 14Q. The purge gas distribution holes 144 may be spaced along the annular purge gas passage 1439 to form a circular hole pattern; the circular hole pattern may have a slightly smaller nominal diameter than the b circle 1404 (eg, 1 paw to 2 mm) The diameter of the). The purge gas distribution orifice 1440 can be a stepped orifice having a discharge diameter of about π (π " to 15". The annular purge gas passage 1439 can be fluidly connected via one or more purge gas spokes 1455 to The purge gas inlet passage 1438. The purge gas supplied to the purge gas inlet passage 1438 by the purge gas line 1435 can travel into the annular purge gas passage 1439 by one or more purge gas spokes 1455, and The gas is evacuated by the purge gas distribution hole 144. The purge gas can then exit the purge gas distribution hole 144 and enter a gap between the wafer 14〇4 and the chuck 1422, at which the purge gas can be purged. Finally, toward the periphery of the wafer 1404 and above and below the guard ring 1421. The purge gas can be used to substantially protect the chuck 1422 from the reactants used for deposition, as 160970. Doc -75- 201237994 This prevents substantial deposition on the chuck 1422 and extends the useful life of the chuck 1422. Although some back diffusion of the purge gas over the top of the wafer 1404 and toward the center of the wafer 1404 can occur 'but can flow through the reactant gas toward the guard ring 1421 and above the edge of the wafer support device 1420 Push most of the purge gas. The purge gas also protects the guard ring 1421 and the outer casing 1429 from undesired deposition. In some implementations, for example, a wafer support device that does not provide RF energy, a dielectric interrupt region formed by dielectric plate 1427 and dielectric ring 1426 can be omitted from design. In such implementations, the housing 1429 and the chuck 1422 can be configured to provide a zero between each other. 015 to 0. The thermal insulation zone of 050, thus avoiding the creation of a large volume of space, the omitted dielectric material could originally be located at this large volume. Figures 11 through 14L provide examples of devices that can be used in conjunction with the structures and systems discussed herein. However, those skilled in the art will appreciate that various modifications can be made from the description provided. For example, the galvanic processing module can be a remote and/or direct inductively coupled or capacitively coupled plasma module. In some implementations, the flowable gap-filling module can accommodate more than one pedestal and sprinkler in a single chamber (eg, two pedestals and sprinklers allow for increased mu (four) rot - (iv) towel state = circle. In some embodiments, "a device controller can be included, the system controller having means for controlling processing operations in accordance with the present invention: a device that will often contain - or multiple memory devices and - or multiple locations = m is used to control the processing operation 160970 according to the present invention. Doc • 76 · The machine-readable media of the 201237994 directive can be fitted to the system controller. The processor can be CPU3 CPU or computer' and can include _ or multiple analog and/or digital input/output connections, stepper motor controller boards, etc. H or multiple (four) ratio and/or digital input/output connections, stepping A motor controller board or the like is communicably connected. For example, the system controller can be configured to control the gas delivery system, susceptor movement, vacuum port suction, electrocution electrodes, and/or heating and cooling elements (if present in a particular embodiment). Typically, there will be a user interface associated with the system controller. The user interface can include graphics software for display screens, devices, and/or processing conditions. , and the user's input device, such as indicator devices, keyboards, touch screens, microphones, etc. "System controllers can be connected to any or all of the components shown in the fixture or module, included in this The components shown in the drawings of the application, the placement and connection of the system controller may vary depending on the particular implementation. In some embodiments, the system controller controls the pressure in the processing chamber. The system controller can also control the concentration of various process gases in the chamber by means of a regulating valve, a liquid delivery controller, and a flow restriction valve in the MFC and discharge lines in the delivery system. It is difficult to make H execution line control software, which includes timing, flow rate, chamber pressure, chamber/spray/base/substrate pressure and/or other parameters for specific processing for controlling gas and liquid. Instruction set. In some embodiments, other computer programs stored in the memory device associated with the controller can be used. In some embodiments, the system controller controls the transfer of the substrate to the device shown in the figures and the transfer from the device shown in the figures. The computer code used to control the processing in the processing sequence can be any conventional 160970. Doc -77· 201237994 is written in a computer readable programming language, such as a combination of language, C, C++, Pasea!, F her an or other languages. The compilation target or instruction code can be executed by the processor to execute the tasks identified in the program. The system software can be designed or configured in many ways. For example, various chamber component subroutines or control targets can be programmed to control the operation of the chamber components necessary to perform the process. Examples of programs or program segments for this purpose include process gas control programs, pressure control code, and plasma control code. Controller parameters are related to processing conditions, such as the timing of each operation, the pressure within the chamber, Substrate temperature, process gas flow rate, RF power, and other conditions as described above. These parameters are provided to the user in the form of a recipe and can be entered using the user interface. The signal used for monitoring processing can be referred to by a system controller and/or a digital input connection. The signals processed by the ☆ control are output on the analogy of the device and the digital output connection. The apparatus/process described above can be used in conjunction with a photolithographic patterning tool or process, for example, for fabricating semiconductor devices, displays, (4), photovoltaic panels, and the like. Usually, but not necessarily, such tools/processes will be used or performed together in a common manufacturing facility. Photolithographic patterning of a film typically includes some or all of the following steps, each step being accomplished with a number of possible tools (1) applying a photoresist material to the workpiece (ie, the substrate) using a spin coating or spray tool, (2) Use a hot plate or stove or. ¥ curing tool to cure the photoresist material; (3) exposing the photoresist material to visible light or UV or X-ray using a tool such as a wafer stepper; (4) developing the resist to selectively remove the resist An etchant, which is then patterned using a tool such as a wet bench; 160970. Doc • 78 · 201237994 (5) Transfer the resist pattern to the underlying film or workpiece using a dry or plasma assisted etch tool; and (6) use a tool such as an RF or microwave plasma resist stripper Remove the resist. Additionally, the disclosed method can be practiced in a process in which photolithography and/or patterning is performed before or after the disclosed method. It will be understood that the present invention is generally in its entirety, unless the features in any one of the specific embodiments are specifically identified as contradicting each other, or the context of the invention means that they are mutually exclusive and are not readily combined in the sense of complementarity and/or mutual support. Specific features that are encompassed and contemplated for their complementary implementation may be selectively combined to provide one or more comprehensive but slightly different technical solutions. Therefore, it is to be understood that the above description is given by way of example only, and modifications in detail may be made within the scope of the invention. [Simple description of the drawing] Figure 1 illustrates a flowable gap filling process diagram. 2A and 2B illustrate plan views of a tool for filling a module using a flowable gap. Figure 3 illustrates the configuration of a flowable gap fill module. Figures 4A through 4E illustrate various configurations in a flowable gap fill module implementation. Figure 5A schematically illustrates various gas supply modules for use in a gas delivery system in some implementations of flowable gap fill devices. Figure 5B schematically illustrates an example gas delivery system using He as the carrier gas. Figure 5C schematically illustrates the gas delivery system of Figure 5B with 斛 as 160970. Doc -79· 201237994 Carrier gas. Figure 5D schematically illustrates another example gas delivery system using Ar as a carrier gas. Figure 5A schematically illustrates a second example gas delivery system using Ar as a carrier gas. Figure 5F schematically illustrates a third example gas delivery system using Ar as the carrier gas. Figure 5G schematically illustrates a fourth example gas delivery system using Ar as the carrier gas. Figure 5H schematically illustrates a fifth example gas delivery system using Ar as a carrier gas. Figure 51 schematically illustrates a sixth example gas delivery system using Ar as a carrier gas. Figure 5J schematically illustrates a seventh example gas delivery system using Ar as the carrier gas. Figure 5K schematically illustrates an eighth example gas delivery system using Ar as the carrier gas. Figure 5L schematically illustrates a ninth example gas delivery system using Ar as a carrier gas. Figure 5M schematically illustrates a ninth gas delivery system having an optional directional line purge gas source using Ar as the carrier gas. Figure 6 is a simplified plan view of the position of the reactor and possibly the resistive heating elements. Figure 7A illustrates the removable baffle in plan view. Figure 7B illustrates the reactor and the annular passage in plan view. 160970. Doc -80· 201237994 Figure 7C illustrates the reactor in an isometric view. Figure 8 is a graph showing the analysis results of the baffle. Figure 9 is an isometric view of the reactor where the hidden lines show internal features. Figure 1 shows a partial hole pattern for the showerhead. Figure 11 shows an example of a reactor or module. Figure 12 is a simplified schematic diagram of a remote plasma processing module. Figure 13 is a simplified illustration of the various components of the HDP-CVD apparatus. Figure 14A depicts an isometric view of an example reactor. Figure 14B depicts an isometric cross-sectional view of the reactor of Figure 14A. Figure 14C depicts a side cross-sectional view of the reaction Is of Figure 14A. Figure 14D depicts an isometric cross-sectional view of the reactor of Figure 14A with the wafer in a raised position. Figure 14E depicts a side cross-sectional view of the reaction of Figure 14A with the wafer in a raised position. Figure 14F depicts an isometric view of the wafer support device of Figure 14A. Figure 14G depicts an isometric exploded view of the wafer support device of Figure 14A. Figure 14H depicts an isometric partial cross-sectional view of the wafer fulcrum assembly of Figure 14A illustrating the cooling line interface. Figure 141 depicts a plurality of views of an example cooling plate for use in the reactor of Figure 14A. Figure 14J depicts an isometric cross-sectional view of the wafer support apparatus of Figure 14A illustrating the light pipe interface. Figure 14K depicts a side view of the cross section shown in Figure 14J. Figure 14L depicts the wafer support device 160970 of Figure 14A illustrating the gas purge interface. Isometric section of doc 201237994. Figure 14M depicts a side view of the cross section shown in Figure 14L. Figure 14N depicts an isometric cross-sectional view of the wafer support apparatus of Figure 14A illustrating the vacuum interface. Figure 140 depicts a side view of the cross section shown in Figure 14N. Figure 14P depicts a detailed cross-sectional view of the wafer support device of Figure 14A. Figure 14Q depicts another detailed cross-sectional view of the wafer support device of Figure 14A. [Main component symbol description] 200 Tool configuration 210 High-density plasma chemical vapor deposition (HDP-CVD) module 220 Flowable gap filling module 230 PEC module 240 WTS module 250 Vacuum pre-extraction chamber 260 Tool configuration 270 remote plasma curing module 280 . Flowable gap fill module 290 Vacuum pre-extraction chamber 295 Wafer transfer system 300 Flowable gap fill processing module 310 Reactor 320 Gas delivery system 330 Treatment of reactants and chemical sources 340 Flow control hardware 160970. Doc -82 - 201237994 350 Gas Delivery Controller 360 Sprinkler 370 Base 380 Base Drive Unit 400 Reactor 402 Chamber Housing 404 Top Plate 406 Skirt 408 Sprinkler 410 Wafer 412 Chuck 414 Insulation Ring 416 RF Electrode 418 Resistance heating element 420 Base 420, base 422 Pressure plate 424 Base column 426 Seal 428 Platen coolant line 430 Base purge line 432 〇 Inflator 434 Ρ Inflator 436 0 Gas line · 83 · 160970. Doc 201237994 438 P gas line 440 partition 442 0 reactant 444 P reactant 446 deposition gas mixture 448 0 inflator hole 450 P inflator hole 452 purge gas 454 coolant 456 heat 501 module A gas source 502 module A mass Flow controller 503 Module B gas source 504 Module B mass flow controller 505 Module C liquid source 506 Module C gas source 507 Module C liquid flow meter 508 Module C mass flow controller 509 Module C vaporizer 510 Module D liquid source 511 module D liquid flow controller 512 module D vaporizer 513 module E liquid source 514 module E vaporizer 160970. Doc -84- 201237994 515 Module E Mass Flow Meter 516 Module F First Liquid Source 517 Module F Gas Source 518 Module F Second Liquid Source 519 Module F First Liquid Flow Controller 520 Module F Mass Flow Controller 521 Module F Second Liquid Flow Controller 522 Module F Evaporator 523 0 Steering Line 524 P Steering Line 525 Partition 526 Dual Flow Sprinkler 527 〇 Partition 528 P Partition 529 Module C 530 Module A 531 Module A 532 module A 533 module A 534 module A 535 module A 536 module E 537 module E 538 module E 160970. Doc -85 · 201237994 539 Module c 540 Module A 541 Module A 542 Module D 543 Module c 544 Module E 545 Module D 546 Module D 547 Module c 548 Module E 549 Module F 600 Reactor 610 chamber 620 internal pores 630 resistance heating 匣 650 resistance heat device 700 reactor 701 removable baffle 703 annular zone 704 top plate 705 radial extension 707 sub L 708 sprinkler head 709 hole 160970. Doc -86- 201237994 711 Reactor 712 Chuck 713 Annular Channel 714 Insulation Ring 715 Radial Cavity 717 Vacuum Port 722 Platen 724 Base Shaft 728 Coolant Line 728' Cooling Channel 900 Reactor 901 Remote Plasma Source Port 1000 Sub-L pattern 1010 Pupil 1020 P-hole 1100 Reactor/chamber 1102 Low-frequency RF generator 1104 High-frequency RF generator 1108 Manifold 1110 Source gas line 1112 Inlet 1114 Sprinkler 1116 Substrate 1118 Wafer pedestal • 87- 160970. Doc 201237994 1120 Ground Heater Frame 1122 Outlet 1124 Processing Chamber 1200 Device 1201 Exposure Chamber 1203 Wafer 1205 Platen 1207 Pipe 1209 Inlet 1211 Plasma Generation Section 1217 Sprinkler Head Assembly 1301 Reactor 1303 Processing Chamber 1305 Top RF Coil 1307 Side RF Coil 1309 Wafer Base 1311 Substrate 1313 Line 1315 HFRF Source 1317 Inlet 1321 Main Gas Ring 1322 Outlet 1400 Reactor 1401 Chamber 160970. Doc -88 201237994 1402 Lifting mechanism 1404 Wafer 1420 Wafer support device 1421 Guard ring 1422 Chuck 1423 Purge channel plate 1424 Cooling channel 1425 Substrate 1426 Dielectric ring 1427 Dielectric plate 1428 Release pin assembly 1429 Housing 1430 Interface plate 1431 Coolant line 1432 Calibration light tube 1433 In-situ light tube 1434 Phosphor disc 1435 Purge gas line 1437 Vacuum channel 1438, Purge gas inlet channel 1439 Purge gas channel 1440 Purge gas distribution hole 1441 Protrusion 1442 Column 160970. Doc -89- 201237994 1443 Storage recess 1444 Clearance 1445 Radial insulation 1446 Axial insulation 1447 Radial insulation 1448 Radial insulation 1449 Axial insulation 1450 Radial insulation 1452 Axial isolation Hot zone 1453 Axial insulation zone 1454 Support column 1455 Purge gas spokes 1456 Purge gas riser 1457 Vacuum line 1458 Vacuum riser 1459 First structural support zone 1460 Second structural support zone 1461 Vacuum port 160970. Doc -90-

Claims (1)

201237994 VII. Patent application scope: 1. A wafer supporting device, comprising: - a disk; wherein: the chuck comprises a top surface, a bottom surface and an outer surface; the top surface is substantially parallel to the bottom surface The outer surfaces are located between the top surface and the bottom surface; and the top surface is configured to support a semiconductor wafer; and an outer casing; wherein: the outer casing includes an outer wall and is connected to One of the outer walls of the outer casing; the bottom casing comprises a first thermal insulation zone extending from the outer wall toward the center of the outer casing floor, wherein the first thermal insulation zone is stopped before extending to the center of the outer casing floor; The bottom surface of the chuck faces the bottom plate of the casing; the bottom surface and the outer surface of the chuck may be substantially within a volume defined by the outer wall and the outer casing floor; the chuck and the outer casing are configured to Moving together as a single assembly in a semiconductor fabrication chamber; there is no substantial thermal contact between the outer surface of the chuck and the outer wall of the outer casing; and across the first thermal insulation The zone has no substantial thermal contact between the bottom surface and the bottom plate of the outer casing. 2. The wafer support device of claim 1, wherein the chuck occurs when the wafer support device is exposed to a gas and ring 160970.doc 201237994 condition present in a flowable deposition semiconductor fabrication chamber The insubstantial thermal contact between the outer surface and the outer wall of the outer casing and the insubstantial thermal contact between the bottom surface and the outer casing floor across the first thermal insulation region. 3. The wafer support device of claim 2, wherein the gases comprise ^ or He, and the environmental conditions comprise a pressure between 25 Torr and 75 Torr. 4. The wafer support device of claim 1, wherein: at least substantially all of the outer surface of the chuck and the outer wall of the outer casing have a gap of at least 〇15, and spans the A thermally insulated region has at least one of a gap between the bottom surface and the bottom plate of the outer casing. 5. The wafer support device of claim 1, wherein: the outer surface and the outer wall are substantially cylindrical; the outer casing bottom is substantially annular and has an inner perimeter; and the thermal insulation region does not extend to the interior world. 6. The wafer support device of claim 5, the wafer support device further comprising a dielectric interrupt region, wherein: the dielectric interrupt region comprises an outer dielectric wall and a dielectric connected to the outer dielectric wall a bottom plate; the dielectric substrate includes a second thermal insulation region extending from the outer dielectric wall toward the center of the dielectric substrate; the dielectric substrate is interposed between the bottom plate of the outer casing and the bottom surface; a wall is interposed between the outer wall and the outer surface; the outer wall, the outer dielectric wall and the outer surface have no substantial thermal contact; 160970.doc 201237994 spans the second thermal insulation region on the bottom surface and the dielectric There is no substantial thermal contact between the bottom plates; and there is no substantial thermal contact between the dielectric backplane and the bottom plate of the housing across the first insulating region. 7. The wafer support device of claim 6, wherein: the outer surface is spaced from a surface of the outer dielectric wall facing the outer surface by a gap between 0.015" and 〇.050"; a bottom surface is spaced apart from a surface of the dielectric substrate in the second heat insulating region facing the bottom surface by a gap between 〇·〇15" and 0.050"; the outer dielectric wall and the a surface of the outer wall facing each other separated by a gap between 0.015"and 〇.〇5〇"; and one of the surface of the dielectric substrate and the bottom plate of the outer casing is in the first thermal insulation zone The surface is separated by a gap between 0.015 " and 〇.〇5〇". The wafer support device of claim 1, wherein the chuck comprises a cooling passage, the cooling passage is located at the top surface A wafer support device between the bottom surface and the bottom surface of the chuck. The wafer support device of claim 8, wherein the circuitous path comprises: a plurality of nested C-shaped segments having different sizes And a plurality of bridging sections; wherein: the parent-span section uses one of the other C-shaped sections One end of the C-shaped section should be joined at the end; and only one bridging section joins any two c-shaped sections together. ίο. The wafer support apparatus of claim 1, wherein the chuck contains An annular purge gas passage ' between the surface and the bottom surface of the top 160970.doc 201237994 and wherein a circular pattern of the aperture fluidly connects the annular purge gas passage to the top surface. 11 a wafer support device, wherein the wafer support device is configured to support a wafer having a specified nominal diameter, and the diameter of the circular pattern is 1 mm to 2 mm smaller than the nominal diameter. A wafer support device, further comprising: a guard ring, wherein the guard ring: is substantially annular; the inner diameter is greater than a nominal diameter of one of the semiconductor wafers configured to support the top surface; The chuck support; does not contact the outer wall of the outer casing or the outer surface of the chuck. 13. The wafer support device of claim 12, wherein: the guard ring comprises a plurality of cylinders; Protection ring Projecting a first amount toward a surface of the top surface and protruding into one of the top surfaces, the depth of one of the recesses being less than the first amount; the surface of the guard ring having the pillars protruding therefrom The top surface is offset from 15 microns to 250 microns. k The wafer support device of claim 12 wherein there is a gap of at least G Qi5" between the surface of the guard ring that is closest to the outer wall and the outer wall. 15. The wafer support apparatus of claim 1, wherein: 160970.doc 201237994 a plurality of protruding protrusions protrude from the top surface; the protrusions are arranged in a concentric circular pattern; and each protrusion protrudes from the top surface i 5 Micron to 25 microns. 16. The wafer support apparatus of claim 1, wherein: the chuck further comprises a calibration light pipe and an in-situ light pipe; one end of the calibration light pipe terminates at a center of the top surface; One end of the tube terminates at a phosphor disc located between the top surface and the bottom surface; and the calibration light tube is separated from the in-situ light tube by a distance within the chuck, the distance being less than the bottom plate of the housing The distance from the center to the first thermal insulation zone. 17. The wafer support device of claim 9, wherein: the chuck comprises a first plate and a second plate; the first plate comprises a first top surface and a first bottom surface; The second top surface and the second bottom surface are included; the first top surface is coupled to the second bottom surface; the cooling passage is recessed into the second bottom surface; the first plate includes two through holes; each through hole One of the cooling channels corresponds to a different terminal, and the first plate is aligned with the second plate such that each of the through holes is aligned with the corresponding terminal of the cooling channel. 18. The wafer support device of claim 17, wherein: the chuck further comprises a third plate; the third plate comprises a third top surface and a third bottom surface; 160970.doc 201237994 the third bottom surface is coupled to a second top surface; the third bottom surface includes an annular purge gas passage and one or more purge gas supply passages fluidly connected to the annular purge gas passage; a circular pattern of the holes to purge the annular gas A passage is fluidly coupled to the third top surface; and a purge gas inlet passes through the first plate and the second plate and the one or more purge gas supply passages are fluidly coupled to the first bottom surface. 19. The wafer support apparatus of claim 6, wherein: the chuck and the outer casing are mainly made of aluminum; and the dielectric interruption zone is mainly made of Al2〇3. 20. The wafer support device of claim 19, wherein: the chuck is primarily made of 3003 aluminum; and the top surface is coated with YF3. 21. A device for semiconductor manufacturing, the device comprising: a chamber comprising a heater system and a substantially circular inner surface; the chuck having a wafer support region, a substantially a cylindrical outer surface and a cooling system; a chuck housing having a substantially cylindrical outer surface; and a controller configured to control the heater system and the cooling system; wherein: the card The disc is substantially contained in the chuck housing and supported by the chuck housing; the chuck housing is movable relative to the chamber; I60970.doc -6 - 201237994 The wafer support area is not obstructed by the chuck housing The controller is configured to generate a first operational configuration by adjusting a cooling system temperature and a heating system temperature; wherein, in the first operational configuration: the inner surface of the 5H chamber has at least 4 Hey. a temperature of the wafer; the wafer branch region has a temperature between _1 〇 and +1 ;; and the outer surface of the chuck housing has a temperature higher than the temperature of the wafer support region One temperature of 5 °C. 22. The device of claim 21, wherein the controller is further configured to generate a second operational configuration by adjusting the cooling system temperature and the heating system temperature, wherein 'in the In the second operational configuration: the inner surface of the chamber 'the outer surface of the chuck housing and the wafer support region have greater than 70. (1) The apparatus of claim 21, wherein the controller is further configured to generate a third operational configuration by adjusting the cooling system temperature and the heating system temperature, wherein 'in the third In the operational configuration: the inner surface of the chamber, the outer surface of the chuck housing, and the wafer branch region have a temperature between 30 ° C and 5 ° ° C. The device, wherein the controller is further configured to maintain a temperature profile 'a level of variation across a wafer supported by the wafer support region less than 〇.35 ° C. A semiconductor fabrication module' a chamber; the chamber comprising: 160970.doc 201237994 an inner surface; a top plate; and a bottom plate; a wafer support device 'the wafer support device is contained in the chamber and comprising: a chuck; Wherein the chuck: configured to support a semiconductor wafer having a nominal diameter D via a wafer support region on a top surface of one of the chucks during processing; the overall shape being substantially cylindrical; Has one of greater than D a diameter; and an outer casing, the outer casing comprising an outer surface and a bottom plate; wherein: the outer surface is substantially cylindrical; the chuck is substantially located within a volume defined by the outer surface; and the outer surface defines the An outer edge of the bottom plate; a showerhead positioned above the wafer support area; a gas distribution system 'the gas distribution system configured to deliver reactants to the chamber via the showerhead; a heating system 'the heating system configured to heat the inner surface of the chamber, the top plate and the bottom plate; a cooling system configured to cool the chuck; and a temperature controller, wherein the temperature The controller is configured to: control the amount of heating supplied by the heating system; control the amount of cooling supplied by the cooling system; and 160970.doc 201237994 provides a first operational configuration by adjusting the cooling system and the heating system Wherein, in the first operational configuration: the inner surface of the chamber has a temperature of at least 40 ° C; the wafer support region has a relationship between -10 Ot: and +10 ° C a temperature; and the outer surface of the outer casing has a temperature that is at least 5 ° C higher than the temperature of the wafer support region. 26. The semiconductor manufacturing module of claim 25, wherein: the shower head comprises a first An inflating portion and a second inflating portion, wherein the first inflating portion and the second inflating portion are fluidly isolated from each other in the shower head and each is equipped with a gas distribution hole, and the gas distribution holes are located in the wafer Two treatment chambers are fluidly coupled to a processing volume between the support region and the showerhead; and wherein the gas distribution system is further configured to: pass one or more first reactions via a first showerhead supply line The material is delivered to the first plenum of the showerhead; and one or more second reactants are delivered to the second plenum of the showerhead via a second showerhead supply line. 27. The semiconductor manufacturing module of claim 26, wherein: the first showerhead supply line is configured to be heated by a first showerhead supply line heater; the second showerhead supply line is grouped The state is to be heated by a second sprinkler supply line heater; the temperature controller is further configured to control the line shower heater and the second spray by the first sprinkler 160970.doc •9·201237994 The head is supplied with the amount of heating supplied by the line heater. 28. The semiconductor manufacturing module of claim 27, wherein the first sprinkler supply line heater, the second sprinkler supply line heater, and the temperature controller are configured to use the first sprinkler The supply line and the second sprinkler supply line are heated to a temperature of at least 1 〇〇 °C. 29. The semiconductor fabrication module of claim 26, wherein the chuck is configured to supply a purge gas around a perimeter of the wafer support region. 30. The semiconductor fabrication module of claim 29, wherein: the wafer support region comprises a plurality of protrusions configured to cause a semiconductor wafer supported by the wafer support region to deviate from the chuck a distance between 15 microns and 250 microns; the s chuck is configured to supply the purge gas around the perimeter of the wafer baffle region via a circular pattern of purge gas holes; the circle The pattern has a diameter that is less than the nominal diameter by about 1 mm to 2 mm; and the purge gas orifice has an exit diameter that is less than a diameter difference between the circular pattern and the nominal diameter. 31. The semiconductor manufacturing module of claim 26, wherein the wafer branch device further comprises: a dielectric interrupt region interposed between the chuck and the outer casing; wherein: the dielectric interrupt region spans the outer casing The central housing region of the bottom plate is in substantial thermal contact with the outer casing; the dielectric interruption region spans the portion of the bottom plate other than the central outer casing region, which is not substantially in thermal contact; the dielectric interruption region spans a central chuck region in substantial thermal contact with the chuck; the dielectric interruption region spans the portion of the chuck other than the central chuck region that is not in substantial thermal contact with the chuck; and along the outer surface of the housing The center chuck region and the center outer casing region have a nominal size that is less than 50% of the diameter of the chuck when viewed from the center axis. 32. The semiconductor manufacturing module of claim 31, wherein: the dielectric interruption region and the surface of the outer casing facing each other are separated from each other except for portions of the surfaces that contact each other across the central outer casing region a gap between 0.015" and 0.050"; and the dielectric interruption zone and the surface of the chuck facing each other, except for the portions of the faces that contact each other across the central chuck area, each other Separating a gap between 0.015" and 0.050". The semiconductor manufacturing module of claim 3, wherein the wafer support device further comprises a guard ring, wherein the guard ring: supported by the chuck Substantially axisymmetric; having an inner diameter that is less than one of the nominal diameters of the chuck; and /σ is offset from the chuck by 丨5 microns to 25 microns, wherein the deviation from the chuck Provided by a cylinder that is in thermal contact with the chuck across an overlapping portion that is not offset from the chuck; and wherein the guard ring is spaced from the surface of the dielectric interruption facing each other I60970.doc 201237994 0.015” to 0.05 0" a gap' and the guard ring is spaced from the surface of the outer casing facing each other by a gap of 〇15"to 〇5〇". 34. The semiconductor fabrication module of claim 25, wherein one or more components selected from the group consisting of: the chamber, the chuck, the outer casing, and the showerhead are in a reactant exposed to the chamber At least a portion of the area is coated with a hydrophobic coating. 35. The semiconductor fabrication module of claim 34, wherein the hydrophobic coating is Ti02. 160970.doc 12