DE112019001953T5 - Vorrichtung zur chemischen gasphasenabscheidung mit mehrzonen-injektorblock - Google Patents
Vorrichtung zur chemischen gasphasenabscheidung mit mehrzonen-injektorblock Download PDFInfo
- Publication number
- DE112019001953T5 DE112019001953T5 DE112019001953.8T DE112019001953T DE112019001953T5 DE 112019001953 T5 DE112019001953 T5 DE 112019001953T5 DE 112019001953 T DE112019001953 T DE 112019001953T DE 112019001953 T5 DE112019001953 T5 DE 112019001953T5
- Authority
- DE
- Germany
- Prior art keywords
- reactant gas
- zone
- reactant
- reactor
- distribution outlets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862657255P | 2018-04-13 | 2018-04-13 | |
| US62/657,255 | 2018-04-13 | ||
| PCT/US2019/027312 WO2019200312A1 (en) | 2018-04-13 | 2019-04-12 | Chemical vapor deposition apparatus with multi-zone injector block |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112019001953T5 true DE112019001953T5 (de) | 2021-01-21 |
Family
ID=68161466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112019001953.8T Pending DE112019001953T5 (de) | 2018-04-13 | 2019-04-12 | Vorrichtung zur chemischen gasphasenabscheidung mit mehrzonen-injektorblock |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12584223B2 (https=) |
| JP (1) | JP7495882B2 (https=) |
| CN (2) | CN110373653B (https=) |
| DE (1) | DE112019001953T5 (https=) |
| TW (2) | TWM597506U (https=) |
| WO (1) | WO2019200312A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI770201B (zh) * | 2017-06-23 | 2022-07-11 | 德商馬克專利公司 | 選擇性膜成長之原子層沉積之方法 |
| TWM597506U (zh) | 2018-04-13 | 2020-06-21 | 美商維高儀器股份有限公司 | 具有多區域噴射器塊的化學氣相沉積設備 |
| US11225716B2 (en) * | 2019-11-27 | 2022-01-18 | Tokyo Electron Limited | Internally cooled multi-hole injectors for delivery of process chemicals |
Family Cites Families (126)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3156090A (en) | 1961-09-18 | 1964-11-10 | Harold R Kaufman | Ion rocket |
| DE1901037A1 (de) | 1969-01-07 | 1971-02-25 | Schmidt & Haensch Franz | Lichtelektrisches Farbpyrometer |
| US3913320A (en) | 1974-11-13 | 1975-10-21 | Ion Tech Inc | Electron-bombardment ion sources |
| US4565618A (en) | 1983-05-17 | 1986-01-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Apparatus for producing diamondlike carbon flakes |
| US4929322A (en) | 1985-09-30 | 1990-05-29 | Union Carbide Corporation | Apparatus and process for arc vapor depositing a coating in an evacuated chamber |
| US4783593A (en) | 1985-12-26 | 1988-11-08 | General Electric Company | Optical system for wide angle IR imager |
| US4708493A (en) | 1986-05-19 | 1987-11-24 | Quantum Logic Corporation | Apparatus for remote measurement of temperatures |
| JPH07104210B2 (ja) | 1987-03-27 | 1995-11-13 | ミノルタ株式会社 | 放射温度計 |
| US4873467A (en) | 1988-05-23 | 1989-10-10 | Kaufman Harold R | Ion source with particular grid assembly |
| CN1064294C (zh) | 1994-04-25 | 2001-04-11 | 吉莱特公司 | 制造剃刀刀片的方法 |
| US5433386A (en) | 1994-06-24 | 1995-07-18 | Siemens Automotive L.P. | Fuel injector having an adjustment tube that discourages support for a vapor bubble dome |
| KR960010901A (ko) | 1994-09-30 | 1996-04-20 | 김광호 | 고체 유기화합물 전용 버블러 장치 |
| GB9503305D0 (en) | 1995-02-20 | 1995-04-12 | Univ Nanyang | Filtered cathodic arc source |
| US5545252A (en) | 1995-03-01 | 1996-08-13 | The Perkin-Elmer Corporation | Flow regulation in gas chromatograph |
| US5552017A (en) | 1995-11-27 | 1996-09-03 | Taiwan Semiconductor Manufacturing Company | Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow |
| US5673562A (en) | 1996-02-23 | 1997-10-07 | L'air Liquide, S.A. | Bulk delivery of ultra-high purity gases at high flow rates |
| US6042900A (en) | 1996-03-12 | 2000-03-28 | Alexander Rakhimov | CVD method for forming diamond films |
| GB9615548D0 (en) | 1996-07-24 | 1996-09-04 | Univ Nanyang | Cathode arc source and graphite target |
| US6217662B1 (en) | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
| US5759281A (en) | 1997-06-30 | 1998-06-02 | Emcore Corporation | CVD reactor for uniform heating with radiant heating filaments |
| JPH1154496A (ja) | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | 熱処理装置及びガス処理装置 |
| US6161500A (en) * | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
| GB9722650D0 (en) | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source with target feeding apparatus |
| US6116080A (en) | 1998-04-17 | 2000-09-12 | Lorex Industries, Inc. | Apparatus and methods for performing acoustical measurements |
| US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US6423613B1 (en) | 1998-11-10 | 2002-07-23 | Micron Technology, Inc. | Low temperature silicon wafer bond process with bulk material bond strength |
| CA2256847A1 (en) | 1998-12-22 | 2000-06-22 | Munther Kandah | Particle-free cathodic arc carbon ion source |
| US6464891B1 (en) | 1999-03-17 | 2002-10-15 | Veeco Instruments, Inc. | Method for repetitive ion beam processing with a carbon containing ion beam |
| US6231933B1 (en) | 1999-03-18 | 2001-05-15 | Primaxx, Inc. | Method and apparatus for metal oxide chemical vapor deposition on a substrate surface |
| US6465780B1 (en) | 1999-03-31 | 2002-10-15 | The Regents Of The University Of California | Filters for cathodic arc plasmas |
| US6548817B1 (en) | 1999-03-31 | 2003-04-15 | The Regents Of The University Of California | Miniaturized cathodic arc plasma source |
| US6465793B1 (en) | 1999-03-31 | 2002-10-15 | The Regents Of The University Of California | Arc initiation in cathodic arc plasma sources |
| JP4487338B2 (ja) * | 1999-08-31 | 2010-06-23 | 東京エレクトロン株式会社 | 成膜処理装置及び成膜処理方法 |
| JP2001127169A (ja) | 1999-10-27 | 2001-05-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
| JP2002110567A (ja) | 2000-10-03 | 2002-04-12 | Mitsubishi Electric Corp | 化学気相成長装置および該装置による半導体ウエハの成膜方法 |
| WO2002054837A2 (en) | 2001-01-04 | 2002-07-11 | Laser Imaging Systems Gmbh & Co. Kg | Direct pattern writer |
| US6506252B2 (en) | 2001-02-07 | 2003-01-14 | Emcore Corporation | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| JP3611796B2 (ja) | 2001-02-28 | 2005-01-19 | 松下電器産業株式会社 | 超音波送受波器、超音波送受波器の製造方法及び超音波流量計 |
| US6902623B2 (en) | 2001-06-07 | 2005-06-07 | Veeco Instruments Inc. | Reactor having a movable shutter |
| US20060191637A1 (en) * | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
| EP1432844B1 (en) | 2001-09-29 | 2018-11-21 | Cree, Inc. | Apparatus for inverted cvd |
| US6590344B2 (en) * | 2001-11-20 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selectively controllable gas feed zones for a plasma reactor |
| WO2003054912A1 (en) * | 2001-12-20 | 2003-07-03 | Tokyo Electron Limited | Method and apparatus comprising a magnetic filter for plasma processing a workpiece |
| US20030173870A1 (en) | 2002-03-12 | 2003-09-18 | Shuh-Yueh Simon Hsu | Piezoelectric ultrasound transducer assembly having internal electrodes for bandwidth enhancement and mode suppression |
| US7734439B2 (en) | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
| US6786035B2 (en) | 2002-07-22 | 2004-09-07 | The Boeing Company | Ion thruster grid clear |
| US6812648B2 (en) | 2002-10-21 | 2004-11-02 | Guardian Industries Corp. | Method of cleaning ion source, and corresponding apparatus/system |
| US7557362B2 (en) | 2004-02-04 | 2009-07-07 | Veeco Instruments Inc. | Ion sources and methods for generating an ion beam with a controllable ion current density distribution |
| US8366830B2 (en) | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
| WO2004088729A1 (en) | 2003-03-26 | 2004-10-14 | Tokyo Electron Limited | Chemical processing system and method |
| KR100513920B1 (ko) * | 2003-10-31 | 2005-09-08 | 주식회사 시스넥스 | 화학기상증착 반응기 |
| US6895825B1 (en) | 2004-01-29 | 2005-05-24 | The Boeing Company | Ultrasonic transducer assembly for monitoring a fluid flowing through a duct |
| US7570368B2 (en) | 2004-05-12 | 2009-08-04 | Veeco Instruments Inc. | Method and apparatus for measuring the curvature of reflective surfaces |
| EP1747302B1 (en) | 2004-05-20 | 2012-12-26 | Akzo Nobel N.V. | Bubbler for constant vapor delivery of a solid chemical |
| US7666323B2 (en) | 2004-06-09 | 2010-02-23 | Veeco Instruments Inc. | System and method for increasing the emissivity of a material |
| JP5519105B2 (ja) | 2004-08-02 | 2014-06-11 | ビーコ・インストゥルメンツ・インコーポレイテッド | 化学気相成長の方法及び化学気相成長リアクタ用のガス供給システム |
| JP4542860B2 (ja) | 2004-10-04 | 2010-09-15 | 大陽日酸株式会社 | 気相成長装置 |
| WO2006124055A2 (en) | 2004-10-12 | 2006-11-23 | Nanosys, Inc. | Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires |
| DE102004053659B3 (de) | 2004-11-03 | 2006-04-13 | My Optical Systems Gmbh | Verfahren und Vorrichtung zur berührungslosen Erfassung von thermischen Eigenschaften einer Objektoberfläche |
| JP4652822B2 (ja) | 2005-01-07 | 2011-03-16 | 学校法人同志社 | 熱音響装置 |
| US20060196417A1 (en) * | 2005-03-03 | 2006-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas distribution systems for deposition processes |
| CN101248505B (zh) | 2005-07-08 | 2010-12-15 | 耐克斯金思美控股公司 | 受控粒子束制造用的设备和方法 |
| CN100358097C (zh) | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺处理系统及其处理方法 |
| CN104162200B (zh) | 2006-02-09 | 2018-03-27 | 德卡产品有限公司 | 外围系统 |
| US8603248B2 (en) | 2006-02-10 | 2013-12-10 | Veeco Instruments Inc. | System and method for varying wafer surface temperature via wafer-carrier temperature offset |
| US20080078746A1 (en) * | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
| US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
| CN102174693B (zh) | 2007-01-12 | 2014-10-29 | 威科仪器有限公司 | 气体处理系统 |
| US7718554B2 (en) | 2007-02-09 | 2010-05-18 | Wafermasters, Inc. | Focused laser beam processing |
| DE102007009145A1 (de) | 2007-02-24 | 2008-08-28 | Aixtron Ag | Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE |
| JP5063143B2 (ja) | 2007-03-02 | 2012-10-31 | 株式会社リケン | アーク式蒸発源 |
| JP5291086B2 (ja) | 2007-04-17 | 2013-09-18 | スルザー メタプラス ゲーエムベーハー | 真空アーク蒸発源、及び真空アーク蒸発源を有するアーク蒸発チャンバ |
| KR100924287B1 (ko) | 2007-05-10 | 2009-10-30 | 한국과학기술연구원 | 양광주가 존재하지 않는 직류 전원 플라스마 증착 장치와,양광주를 배제한 상태에서의 물질 증착 방법 및 이에 의해제조된 다이아몬드 박막 |
| US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
| US8092599B2 (en) | 2007-07-10 | 2012-01-10 | Veeco Instruments Inc. | Movable injectors in rotating disc gas reactors |
| US8021487B2 (en) | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
| JP5039076B2 (ja) | 2008-03-24 | 2012-10-03 | 株式会社東芝 | エピタキシャルウェーハの製造装置及び製造方法 |
| EP2359392A2 (en) * | 2008-10-10 | 2011-08-24 | Alta Devices, Inc. | Concentric showerhead for vapor deposition |
| US8895107B2 (en) | 2008-11-06 | 2014-11-25 | Veeco Instruments Inc. | Chemical vapor deposition with elevated temperature gas injection |
| KR101639230B1 (ko) | 2008-12-04 | 2016-07-13 | 비코 인스트루먼츠 인코포레이티드 | 화학 기상 증착 유동물 유입구 부재 및 방법 |
| EP2368257A4 (en) | 2008-12-08 | 2016-03-09 | Gen Plasma Inc | MAGNETIC FIELD ION SOURCE DEVICE WITH CLOSED DRIFT AND SELF-CLEANING ANODE AND METHOD OF SUBSTRATE MODIFICATION THEREWITH |
| EP2252077B1 (en) | 2009-05-11 | 2012-07-11 | STMicroelectronics Srl | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
| US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
| JP5436043B2 (ja) | 2009-05-22 | 2014-03-05 | 大陽日酸株式会社 | 気相成長装置 |
| JP5324347B2 (ja) | 2009-07-15 | 2013-10-23 | 大陽日酸イー・エム・シー株式会社 | 気相成長装置 |
| KR101245769B1 (ko) | 2009-07-28 | 2013-03-20 | 엘아이지에이디피 주식회사 | 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법 |
| JP2011132078A (ja) | 2009-12-25 | 2011-07-07 | One Shot Sound:Kk | カーボンナノ粒子の製造装置 |
| US8535445B2 (en) | 2010-08-13 | 2013-09-17 | Veeco Instruments Inc. | Enhanced wafer carrier |
| TW201237994A (en) * | 2010-12-20 | 2012-09-16 | Novellus Systems Inc | System and apparatus for flowable deposition in semiconductor fabrication |
| US8888360B2 (en) | 2010-12-30 | 2014-11-18 | Veeco Instruments Inc. | Methods and systems for in-situ pyrometer calibration |
| WO2012092064A1 (en) | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer processing with carrier extension |
| EP2684979B1 (en) | 2011-03-09 | 2015-08-12 | Taiyo Nippon Sanso Corporation | Vapor deposition apparatus |
| JP5791329B2 (ja) | 2011-03-31 | 2015-10-07 | 大陽日酸株式会社 | 気相成長装置 |
| DE102011056589A1 (de) | 2011-07-12 | 2013-01-17 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors |
| DE102011055061A1 (de) | 2011-11-04 | 2013-05-08 | Aixtron Se | CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor |
| WO2013106171A1 (en) | 2012-01-09 | 2013-07-18 | Applied Materials, Inc. | Method for seasoning uv chamber optical components to avoid degradation |
| US9019584B2 (en) | 2012-03-12 | 2015-04-28 | Empire Technology Development Llc | Holographic image reproduction mechanism using ultraviolet light |
| US9816184B2 (en) | 2012-03-20 | 2017-11-14 | Veeco Instruments Inc. | Keyed wafer carrier |
| CN103388132B (zh) | 2012-05-11 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 气体喷淋头、其制造方法及薄膜生长反应器 |
| CN104302807B (zh) | 2012-05-18 | 2017-04-05 | 维易科精密仪器国际贸易(上海)有限公司 | 用于化学气相沉积的具有铁磁流体密封件的转盘反应器 |
| US9085824B2 (en) | 2012-06-22 | 2015-07-21 | Veeco Instruments, Inc. | Control of stray radiation in a CVD chamber |
| US9447499B2 (en) * | 2012-06-22 | 2016-09-20 | Novellus Systems, Inc. | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery |
| US9448119B2 (en) | 2012-06-22 | 2016-09-20 | Veeco Instruments Inc. | Radiation thermometer using off-focus telecentric optics |
| US9804126B2 (en) | 2012-09-04 | 2017-10-31 | Veeco Instruments Inc. | Apparatus and method for improved acoustical transformation |
| US9038364B2 (en) | 2012-10-18 | 2015-05-26 | The Boeing Company | Thruster grid clear circuits and methods to clear thruster grids |
| US20140217022A1 (en) | 2013-02-01 | 2014-08-07 | Masdar Institute Of Science And Technology | Novel in-situ membrane cleaning using periodic electrolysis |
| DE102013101534A1 (de) * | 2013-02-15 | 2014-08-21 | Aixtron Se | Gasverteiler für einen CVD-Reaktor |
| US9411237B2 (en) | 2013-03-14 | 2016-08-09 | Applied Materials, Inc. | Resist hardening and development processes for semiconductor device manufacturing |
| US20140284404A1 (en) * | 2013-03-20 | 2014-09-25 | Asm Technology Singapore Pte Ltd. | Chemical vapour deposition injector |
| CN103346080A (zh) | 2013-07-09 | 2013-10-09 | 上海华力微电子有限公司 | 减少金属硅化物掩模层缺陷的方法 |
| US20150064361A1 (en) | 2013-09-04 | 2015-03-05 | Intermolecular Inc. | UV treatment for ALD film densification |
| US9058980B1 (en) | 2013-12-05 | 2015-06-16 | Applied Materials, Inc. | UV-assisted photochemical vapor deposition for damaged low K films pore sealing |
| CN105441904B (zh) * | 2014-06-18 | 2018-06-26 | 中微半导体设备(上海)有限公司 | 气体喷淋装置、化学气相沉积装置和方法 |
| JP5837962B1 (ja) * | 2014-07-08 | 2015-12-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびガス整流部 |
| DE112015003719T5 (de) | 2014-08-11 | 2017-04-27 | Veeco Instruments Inc. | Verbessertes gehäuse für akustische gaskonzentrationssensorik und ablaufsteuerung |
| US9860988B2 (en) | 2014-12-20 | 2018-01-02 | Intel Corporation | Solder contacts for socket assemblies |
| US9748113B2 (en) | 2015-07-30 | 2017-08-29 | Veeco Intruments Inc. | Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system |
| US10358722B2 (en) * | 2015-12-14 | 2019-07-23 | Lam Research Corporation | Showerhead assembly |
| DE102017203255B4 (de) | 2016-03-02 | 2024-06-13 | Veeco Instruments Inc. | Reaktor zur Verwendung bei einem System einer chemischen Dampfabscheidung und Verfahren zum Betreiben eines Systems einer chemischen Dampfabscheidung |
| US10571430B2 (en) | 2016-03-14 | 2020-02-25 | Veeco Instruments Inc. | Gas concentration sensors and systems |
| CN105704903B (zh) | 2016-03-16 | 2019-03-05 | 北京交通大学 | 一种基于磁场作用的真空等离子体生成的放电电极结构 |
| WO2017196622A2 (en) | 2016-05-11 | 2017-11-16 | Veeco Instruments Inc. | Ion beam materials processing system with grid short clearing system for gridded ion beam source |
| SG10201705059TA (en) | 2016-06-24 | 2018-01-30 | Veeco Instr Inc | Enhanced cathodic arc source for arc plasma deposition |
| TWM597506U (zh) | 2018-04-13 | 2020-06-21 | 美商維高儀器股份有限公司 | 具有多區域噴射器塊的化學氣相沉積設備 |
| US12104242B2 (en) | 2019-05-10 | 2024-10-01 | Veeco Instruments Inc. | Deposition system with integrated carrier cleaning modules |
-
2019
- 2019-04-12 TW TW108204554U patent/TWM597506U/zh unknown
- 2019-04-12 US US16/383,321 patent/US12584223B2/en active Active
- 2019-04-12 JP JP2020555785A patent/JP7495882B2/ja active Active
- 2019-04-12 WO PCT/US2019/027312 patent/WO2019200312A1/en not_active Ceased
- 2019-04-12 DE DE112019001953.8T patent/DE112019001953T5/de active Pending
- 2019-04-12 TW TW108112969A patent/TWI809088B/zh active
- 2019-04-15 CN CN201910300090.9A patent/CN110373653B/zh active Active
- 2019-04-15 CN CN201920505560.0U patent/CN210030883U/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110373653A (zh) | 2019-10-25 |
| TWM597506U (zh) | 2020-06-21 |
| US12584223B2 (en) | 2026-03-24 |
| CN210030883U (zh) | 2020-02-07 |
| US20190316258A1 (en) | 2019-10-17 |
| JP2021521332A (ja) | 2021-08-26 |
| CN110373653B (zh) | 2023-12-01 |
| TW201946125A (zh) | 2019-12-01 |
| WO2019200312A1 (en) | 2019-10-17 |
| TWI809088B (zh) | 2023-07-21 |
| JP7495882B2 (ja) | 2024-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE112011104446B4 (de) | Chemische Gasphasenabscheidungs-Vorrichtung und Verfahren zum Herstellen von lichtemittierenden Vorrichtungen mit derselben | |
| DE69623962T3 (de) | Verfahren und vorrichtung zum epitaktischen wachstum mittels cvd | |
| DE112008000169T5 (de) | Gasbehandlungssysteme | |
| DE112010002199B4 (de) | Brausekopf für eine Vakuumschichtabscheidungsvorrichtung | |
| DE69533268T2 (de) | Vorrichtung zur Züchtung einer Verbindungshalbleiterschicht | |
| DE69126122T2 (de) | Methode und apparat zum wachsen von verbindungshalbleiterkristallen | |
| DE102011002145B4 (de) | Vorrichtung und Verfahren zum großflächigen Abscheiden von Halbleiterschichten mit gasgetrennter HCI-Einspeisung | |
| US9593434B2 (en) | Alkyl push flow for vertical flow rotating disk reactors | |
| DE102014201554A1 (de) | Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren | |
| DE112006000464T5 (de) | Chemischer Bedampfungs-Reaktor mit einer Vielzahl von Einlässen | |
| DE102011002146B4 (de) | Vorrichtung und Verfahren zum Abscheiden von Halbleiterschichten mit HCI-Zugabe zur Unterdrückung parasitären Wachstums | |
| DE102012209244B4 (de) | Eine Vorrichtung zum Dünnfilm-Abscheiden | |
| DE112004001308T5 (de) | Chemischer Bedampfungs-Reaktor | |
| DE202015006764U1 (de) | Waferträger mit einer Konfiguration mit 31 Taschen | |
| WO2004097066A1 (de) | Verfahren und vorrichtung zum abscheiden von halbleiterschichten mit zwei prozessgasen, von denen das eine vorkonditioniert ist | |
| DE10222114A1 (de) | Verfahren und System zur Herstellung eines III-V-Verbindungshalbleiters sowie III-V-Verbindungshalbleiter | |
| DE202015006765U1 (de) | Waferträger mit einer Konfiguration mit 14 Taschen | |
| DE112019001953T5 (de) | Vorrichtung zur chemischen gasphasenabscheidung mit mehrzonen-injektorblock | |
| DE202015007242U1 (de) | Waferträger mit einer Multitaschenkonfiguration | |
| DE69012409T2 (de) | Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase. | |
| DE102017203255B4 (de) | Reaktor zur Verwendung bei einem System einer chemischen Dampfabscheidung und Verfahren zum Betreiben eines Systems einer chemischen Dampfabscheidung | |
| DE60008241T2 (de) | Verfahren und vorrichtung zum epitaktischem wachsen eines materials auf einem substrat | |
| EP1608794B1 (de) | Vorrichtung zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition | |
| WO2024146826A1 (de) | Vorrichtung und verfahren zum behandeln von substraten | |
| DE112012003488T5 (de) | Direkte Flüssigkeitsinjektion für Halidgasphasen-Epitaxiesysteme sowie Verfahren dafür |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed |