CN110366770B - 基板处理装置、半导体器件的制造方法及记录介质 - Google Patents
基板处理装置、半导体器件的制造方法及记录介质 Download PDFInfo
- Publication number
- CN110366770B CN110366770B CN201780087210.0A CN201780087210A CN110366770B CN 110366770 B CN110366770 B CN 110366770B CN 201780087210 A CN201780087210 A CN 201780087210A CN 110366770 B CN110366770 B CN 110366770B
- Authority
- CN
- China
- Prior art keywords
- substrate
- substrates
- dummy
- product
- control unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 393
- 238000012545 processing Methods 0.000 title claims description 88
- 238000000034 method Methods 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000012546 transfer Methods 0.000 claims abstract description 59
- 230000007246 mechanism Effects 0.000 claims abstract description 23
- 238000003860 storage Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 116
- 230000008569 process Effects 0.000 description 47
- 239000007789 gas Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 210000000080 chela (arthropods) Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-033214 | 2017-02-24 | ||
| JP2017033214 | 2017-02-24 | ||
| PCT/JP2017/034962 WO2018154829A1 (ja) | 2017-02-24 | 2017-09-27 | 基板処理装置、半導体装置の製造方法及びプログラム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110366770A CN110366770A (zh) | 2019-10-22 |
| CN110366770B true CN110366770B (zh) | 2023-09-19 |
Family
ID=63254212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780087210.0A Active CN110366770B (zh) | 2017-02-24 | 2017-09-27 | 基板处理装置、半导体器件的制造方法及记录介质 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7030772B2 (ja) |
| CN (1) | CN110366770B (ja) |
| SG (1) | SG11201907672VA (ja) |
| WO (1) | WO2018154829A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022064882A1 (ja) | 2020-09-25 | 2022-03-31 | 株式会社Kokusai Electric | 基板配置データの表示方法、半導体装置の製造方法及び基板処理装置並びにプログラム |
| CN113363190B (zh) * | 2021-05-31 | 2022-07-08 | 北海惠科半导体科技有限公司 | 晶舟、扩散设备及半导体器件制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0329317A (ja) * | 1989-06-27 | 1991-02-07 | Mitsubishi Electric Corp | 半導体ウエハ整列装置 |
| CN1708833A (zh) * | 2002-10-30 | 2005-12-14 | 东京毅力科创株式会社 | 热处理装置和热处理方法 |
| JP2010157744A (ja) * | 2010-01-26 | 2010-07-15 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
| JP2012069738A (ja) * | 2010-09-24 | 2012-04-05 | Lapis Semiconductor Co Ltd | 半導体素子の製造方法 |
-
2017
- 2017-09-27 WO PCT/JP2017/034962 patent/WO2018154829A1/ja active Application Filing
- 2017-09-27 JP JP2019501022A patent/JP7030772B2/ja active Active
- 2017-09-27 SG SG11201907672VA patent/SG11201907672VA/en unknown
- 2017-09-27 CN CN201780087210.0A patent/CN110366770B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0329317A (ja) * | 1989-06-27 | 1991-02-07 | Mitsubishi Electric Corp | 半導体ウエハ整列装置 |
| CN1708833A (zh) * | 2002-10-30 | 2005-12-14 | 东京毅力科创株式会社 | 热处理装置和热处理方法 |
| JP2010157744A (ja) * | 2010-01-26 | 2010-07-15 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
| JP2012069738A (ja) * | 2010-09-24 | 2012-04-05 | Lapis Semiconductor Co Ltd | 半導体素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110366770A (zh) | 2019-10-22 |
| SG11201907672VA (en) | 2019-09-27 |
| JP7030772B2 (ja) | 2022-03-07 |
| WO2018154829A1 (ja) | 2018-08-30 |
| JPWO2018154829A1 (ja) | 2019-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101698375B1 (ko) | 기판 처리 장치 및 반도체 장치의 제조 방법 및 기록 매체 | |
| US10096501B2 (en) | Maintenance method of substrate processing apparatus, method for manufacturing semiconductor device, substrate processing apparatus, and storage medium capable of reading maintenance program of substrate processing apparatus | |
| JP6301083B2 (ja) | 基板処理装置、半導体装置の製造方法、及びレシピの作成方法 | |
| JP6545396B2 (ja) | 基板処理装置、振動検出システム及びプログラム | |
| US20100144145A1 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
| WO2014115643A1 (ja) | 基板処理装置の異常判定方法、異常判定装置、及び基板処理システム並びに記録媒体 | |
| KR101051027B1 (ko) | 기판 처리 장치 | |
| US20100055808A1 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
| CN110366770B (zh) | 基板处理装置、半导体器件的制造方法及记录介质 | |
| JP5545795B2 (ja) | 基板処理装置及び半導体製造装置管理方法 | |
| KR102206194B1 (ko) | 기판 처리 장치 및 반도체 장치의 제조 방법 | |
| KR102384558B1 (ko) | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 | |
| JP2011243677A (ja) | 基板処理装置 | |
| JP7018370B2 (ja) | 基板処理装置及び半導体装置の製造方法及びプログラム | |
| JP5374123B2 (ja) | 基板処理システム | |
| JP2013055239A (ja) | 基板処理装置 | |
| CN112750720B (zh) | 衬底处理装置、半导体器件的制造方法以及记录介质 | |
| JP2008053603A (ja) | 基板処理システム | |
| JP5295208B2 (ja) | 基板処理装置、半導体装置の製造方法及び基板処理装置の運用方法 | |
| JP2011204865A (ja) | 基板処理装置 | |
| JP2007258630A (ja) | 基板処理装置 | |
| JP2013239656A (ja) | 基板処理装置 | |
| JP2010225617A (ja) | 基板処理システム | |
| JP2014067228A (ja) | 基板処理装置及び基板処理装置の制御方法 | |
| JP2009252911A (ja) | 基板処理システム |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |