WO2022064882A1 - 基板配置データの表示方法、半導体装置の製造方法及び基板処理装置並びにプログラム - Google Patents
基板配置データの表示方法、半導体装置の製造方法及び基板処理装置並びにプログラム Download PDFInfo
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- WO2022064882A1 WO2022064882A1 PCT/JP2021/029418 JP2021029418W WO2022064882A1 WO 2022064882 A1 WO2022064882 A1 WO 2022064882A1 JP 2021029418 W JP2021029418 W JP 2021029418W WO 2022064882 A1 WO2022064882 A1 WO 2022064882A1
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- board
- substrate
- loaded
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- layout data
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- 239000000758 substrate Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000012545 processing Methods 0.000 title claims description 82
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000012546 transfer Methods 0.000 claims abstract description 132
- 238000003860 storage Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 37
- 230000007246 mechanism Effects 0.000 claims description 27
- 238000011068 loading method Methods 0.000 claims description 16
- 230000007723 transport mechanism Effects 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 5
- 238000012937 correction Methods 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 197
- 239000007789 gas Substances 0.000 description 64
- 238000004088 simulation Methods 0.000 description 44
- 230000032258 transport Effects 0.000 description 26
- 239000000463 material Substances 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- 230000006870 function Effects 0.000 description 10
- 239000002994 raw material Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/4189—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by the transport system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/37—Measurements
- G05B2219/37612—Transfer function, kinematic identification, parameter estimation, response
Definitions
- the present disclosure relates to a method for displaying board layout data, a method for manufacturing a semiconductor device, a board processing device, and a program.
- the production efficiency may be lowered due to the equipment stop due to the shortage of the board, or the quality of the board processing may be lowered due to the fluctuation of the processing conditions, which may lead to the loss of the board.
- An object of the present disclosure is to provide a technique for confirming the arrangement of a substrate loaded in a substrate holder before transferring the substrate to the substrate holder.
- At least a transfer parameter that determines the arrangement of the substrate to be loaded in the substrate holder and carrier information in which the substrate to be loaded in the substrate holder is stored are set.
- a technique comprising, at least, displaying data indicating the arrangement of the substrate in a state where the substrate is loaded in the substrate holder.
- FIG. 2 is a vertical cross-sectional view taken along the line AA of FIG. It is an illustration example of the controller configuration which concerns on embodiment of this disclosure. It is a figure which shows the transfer flow at the time of a normal substrate processing. It is a flow figure which shows the simulation which concerns on embodiment of this disclosure. It is a flow diagram which shows the substrate arrangement program which concerns on 1st Embodiment of this disclosure. It is a figure which shows an example of a simulation setting screen. It is a figure which shows an example of the simulation result.
- the substrate processing apparatus is configured as, for example, a semiconductor manufacturing apparatus that carries out a substrate processing step in a method for manufacturing a semiconductor device (IC: Integrated Circuit).
- IC Integrated Circuit
- the substrate processing apparatus 100 of the present embodiment uses a pod 110 as a carrier for accommodating a wafer (substrate) 200 made of silicon or the like, and includes a housing 111.
- a pod carry-in / carry-out outlet 112 is provided on the front wall 111a of the housing 111 so as to communicate the inside and outside of the housing 111, and the pod carry-in / carry-out outlet 112 is opened and closed by the front shutter 113.
- a load port 114 is installed on the front front side of the pod carry-in / carry-out outlet 112, and the load port 114 mounts the pod 110.
- the pod 110 is carried on the load port 114 by an in-process transfer device (not shown), and is also carried out from the load port 114.
- a storage shelf 105 as a buffer shelf is installed in the upper part in the substantially central portion in the front-rear direction in the housing 111, and the storage shelf 105 rotates around the support column 116 and has a plurality of pods on the shelf board 117.
- Store 110 As shown in FIG. 2, a pod transfer device 118 is installed between the load port 114 and the storage shelf 105 in the housing 111.
- the pod transfer device 118 is composed of a pod elevator 118a that can move up and down while holding the pod 110 and a pod transfer mechanism 118b as a horizontal transfer mechanism, and is between the load port 114, the storage shelf 105, and the pod opener 121. Then, the pod 110 is transported.
- a sub-housing 119 is constructed over the rear end at the lower portion in the substantially central portion in the front-rear direction in the housing 111.
- a pair of wafer loading / unloading outlets 120 for loading / unloading the wafer 200 into the sub-housing 119 are provided so as to be arranged vertically in two stages.
- a pair of pod openers 121 are installed at the upper and lower wafer loading / unloading outlets 120, respectively.
- the pod opener 121 is provided with a mounting table 122 on which the pod 110 is placed and a cap attachment / detachment mechanism 123 for attaching / detaching the cap (cover body) of the pod 110.
- the pod opener 121 opens and closes the wafer loading / unloading port of the pod 110 by attaching / detaching the cap of the pod 110 mounted on the mounting table 122 by the cap attachment / detachment mechanism 123.
- the mounting table 122 is a transfer shelf on which the pod 110 is placed when the substrate is transferred.
- the sub-housing 119 constitutes a transfer room 124 that is isolated from the atmosphere of the installation space of the pod transfer device 118 and the storage shelf 105.
- a wafer transfer mechanism 125 as a substrate transfer section is installed in the front region of the transfer chamber 124.
- the wafer transfer mechanism 125 includes a wafer transfer device 125a capable of horizontally rotating or linearly moving the wafer 200 on the tweeter 125c, and a wafer transfer device elevator 125b for raising and lowering the wafer transfer device 125a. It is composed of.
- the wafer 200 is loaded and unloaded from the boat 217 by the continuous operation of the wafer transfer device elevator 125b and the wafer transfer device 125a.
- the number of tweezers 125c in the present embodiment is five, and the wafer transfer mechanism 125 is configured to be able to convey five wafers 200 at a time or one wafer at a time.
- a processing furnace 202 is provided above the boat 217.
- the processing furnace 202 is provided with a processing chamber (not shown) inside, and a heater (not shown) for heating the processing chamber is provided around the processing chamber.
- the lower end of the processing furnace 202 is opened and closed by the furnace opening gate valve 147.
- a seal cap 129 is horizontally installed at the lower part of the boat 217, and the seal cap 129 is configured to vertically support the boat 217 and close the lower end of the processing furnace 202. Has been done.
- the pod carry-in / carry-out outlet 112 is opened by the front shutter 113 and is carried in from the pod carry-in / carry-out outlet 112.
- the carried-in pod 110 is automatically transported and delivered to the designated shelf board 117 of the storage shelf 105 by the pod transport device 118.
- the pod 110 is temporarily stored in the storage shelf 105 and then transported from the shelf board 117 to one of the pod openers 121 and transferred to the mounting table 122, or directly from the load port 114 to the pod opener 121. It is transported and transferred to the mounting table 122. At this time, the wafer loading / unloading outlet 120 of the pod opener 121 is closed by the cap attachment / detachment mechanism 123, and clean air is circulated and filled in the transfer chamber 124.
- the cap of the pod 110 mounted on the mounting table 122 is removed by the cap attachment / detachment mechanism 123, and the wafer loading / unloading port of the pod 110 is opened. Further, the wafer 200 is picked up from the pod 110 by the wafer transfer mechanism 125, transferred to the boat 217, and loaded. The wafer transfer mechanism 125, which has delivered the wafer 200 to the boat 217, returns to the pod 110 and loads the next wafer 200 into the boat 217.
- the storage shelf 105 to the load port 114 is in the pod opener 121 of the other (lower or upper).
- Another pod 110 is conveyed by the pod transfer device 118, and the opening work of the pod 110 by the pod opener 121 is simultaneously performed.
- the lower end of the processing furnace 202 is opened by the furnace opening gate valve 147. Subsequently, the seal cap 219 is lifted by the boat elevator 115, and the boat 217 supported by the seal cap 219 is carried into the processing chamber in the processing furnace 202 (boat loading process). After carrying in, arbitrary processing is performed on the wafer 200 in the processing chamber (board processing step). After the processing, the boat 217 is pulled out by the boat elevator 115 (boat unloading step), and then the wafer 200 and the pod 110 are discharged to the outside of the housing 111 in the reverse procedure described above.
- the processing furnace 202 is provided with a heater 207 which is a heating unit for heating the wafer (substrate) 200.
- a reaction tube 203 constituting a reaction vessel (processing vessel) is arranged concentrically with the heater 207.
- the reaction tube 203 is made of a heat-resistant material such as quartz (SiO2), and is formed in a cylindrical shape in which the upper end is closed and the lower end is open.
- a manifold 209 made of, for example, stainless steel is attached to the lower end of the reaction tube 203.
- the manifold 209 is formed in a cylindrical shape, and its lower end opening is hermetically closed by a seal cap 219 which is a lid.
- An O-ring 220 is provided between the reaction tube 203, the manifold 209, and the seal cap 219, respectively.
- the reaction tube 203, the manifold 209, and the seal cap 219 form a processing chamber 201.
- a boat 217, which is a board holding portion, is erected on the seal cap 219 via a boat support 218.
- a plurality of wafers 200 to be batch processed are loaded on the boat 217 in multiple stages in the vertical direction in a horizontal posture.
- the boat 217 can be moved up and down with respect to the reaction tube 203 by the boat elevator 115.
- a boat rotation mechanism 267 for rotating the boat 217 is provided at the lower end of the boat support 218, in order to improve the uniformity of processing.
- the heater 207 heats the wafer 200 inserted in the processing chamber 201 to a predetermined temperature.
- the processing chamber 201 is provided with a nozzle 410 (first nozzle 410), a nozzle 420 (second nozzle 420), and a nozzle 430 (third nozzle 430) so as to penetrate the lower part of the reaction tube 203. ..
- the nozzle 410, the nozzle 420, and the nozzle 430 have a gas supply pipe 310 (first gas supply pipe 310), a gas supply pipe 320 (second gas supply pipe 320), and a gas supply pipe 330 (second gas supply pipe 320) as gas supply lines. 3 gas supply pipes 330) are connected to each other.
- the reaction tube 203 is provided with three nozzles 410, 420, 430 and three gas supply tubes 310, 320, 330, and the processing chamber 201 is provided with a plurality of types, here three types. It is configured to be able to supply gas (processed gas).
- the gas supply pipe 310 is provided with a mass flow controller (Mass Flow Controller, abbreviated as MFC) 312 which is a flow control device (flow control unit) and a valve 314 which is an on-off valve in order from the upstream side.
- MFC Mass Flow Controller
- a nozzle 410 is connected to the tip of the gas supply pipe 310.
- the nozzle 410 is configured as a long nozzle, and its horizontal portion is provided so as to penetrate the side wall of the manifold 209. The vertical portion of the nozzle 410 rises upward (in the loading direction of the wafer 200) along the inner wall of the reaction tube 203 in the arcuate space formed between the inner wall of the reaction tube 203 and the wafer 200.
- the nozzle 410 is provided along the wafer arrangement region in the region horizontally surrounding the wafer arrangement region on the side of the wafer arrangement region in which the wafer 200 is arranged.
- a gas supply hole 410a for supplying gas is provided on the side surface of the nozzle 410.
- the gas supply hole 410a is opened so as to face the center of the reaction tube 203.
- a plurality of the gas supply holes 410a are provided from the lower part to the upper part of the reaction tube 203, each having an opening area of the same or inclined in size, and further provided with the same opening pitch.
- the first gas supply system is mainly composed of a gas supply pipe 310, an MFC 312, a valve 314, and a nozzle 410.
- a carrier gas supply pipe 510 for supplying carrier gas is connected to the gas supply pipe 310.
- the first carrier gas supply system is mainly composed of the carrier gas supply pipe 510, the MFC 512, and the valve 514.
- the gas supply pipe 320 is provided with an MFC 322 as a flow rate control device (flow rate control unit) and a valve 324 as an on-off valve in order from the upstream side.
- a nozzle 420 is connected to the tip of the gas supply pipe 320.
- the nozzle 420 is configured as a long nozzle similar to the nozzle 410.
- the structure of the horizontal portion and the vertical portion of the nozzle 420 is the same as that of the nozzle 410.
- a gas supply hole 420a for supplying gas is provided on the side surface of the nozzle 420.
- the gas supply hole 420a is provided with the same configuration as the gas supply hole 410a.
- a second gas supply system is mainly composed of a gas supply pipe 320, an MFC 322, a valve 324, and a nozzle 420.
- a carrier gas supply pipe 520 for supplying carrier gas is connected to the gas supply pipe 320.
- the second carrier gas supply system is mainly composed of the carrier gas supply pipe 520, the MFC 522, and the valve 524.
- the gas supply pipe 330 is provided with an MFC 332 as a flow rate control device (flow rate control unit) and a valve 334 which is an on-off valve in order from the upstream side.
- a nozzle 430 is connected to the tip of the gas supply pipe 330.
- the nozzle 430 is configured as a long nozzle like the nozzle 410.
- the structure of the horizontal portion and the vertical portion of the nozzle 430 is the same as that of the nozzles 410 and 420.
- a gas supply hole 430a for supplying gas is provided on the side surface of the nozzle 430.
- the gas supply holes 430a are provided with the same configuration as the gas supply holes 410a and 420a.
- a third gas supply system is mainly composed of a gas supply pipe 330, an MFC 332, a valve 334, and a nozzle 430.
- a carrier gas supply pipe 530 for supplying carrier gas is connected to the gas supply pipe 330.
- a third carrier gas supply system is mainly composed of a carrier gas supply pipe 530, an MFC 532, and a valve 534.
- the method of supplying gas in the present embodiment is the nozzle 410 arranged in the arc-shaped vertically long space defined by the inner wall of the reaction tube 203 and the end portions of the plurality of loaded wafers 200.
- Gas is transported via 420 and 430. Then, gas is ejected into the reaction tube 203 for the first time in the vicinity of the wafer 200 from the gas supply holes 410a, 420b, and 430c opened in the nozzles 410, 420, and 430, respectively.
- the main flow of gas in the reaction tube 203 is in the direction parallel to the surface of the wafer 200, that is, in the horizontal direction.
- Nozzles 410, 420, and 430 are described as long nozzles in which a horizontal portion and a vertical portion are integrally provided, but they are nozzles configured by assembling individually formed horizontal portions and vertical portions, respectively. May be.
- the first raw material gas is supplied to the processing chamber 201 via the MFC 312, the valve 314, and the nozzle 410.
- the second raw material gas can be supplied to the processing chamber 201 via the MFC 322, the valve 324, and the nozzle 420.
- the reaction gas is supplied to the processing chamber 201 via the MFC 332, the valve 334, and the nozzle 430.
- the inert gas is supplied to the processing chamber 201 via the MFC 512, 522 and 532, valves 514, 524 and 534, nozzles 410, 420 and 430, respectively.
- the reaction pipe 203 is provided with an exhaust pipe 231 for exhausting the atmosphere of the processing chamber 201.
- the exhaust pipe 231 is provided in the manifold 209 at a position opposite to the nozzles 410, 420, 430 so as to penetrate the side wall of the manifold 209. With this configuration, the gas supplied from the gas supply holes 410a, 420a, 430a to the vicinity of the wafer 200 in the processing chamber 201 flows horizontally, that is, in a direction parallel to the surface of the wafer 200, and then heads downward. And will be exhausted from the exhaust pipe 231.
- a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201
- an APC (AutoPressure Controller) valve 243 and a vacuum pump 246 as a vacuum exhaust device.
- the APC valve 243 is an exhaust valve and functions as a pressure adjusting unit.
- the exhaust system, that is, the exhaust line is mainly composed of the exhaust pipe 231, the APC valve 243, and the pressure sensor 245.
- the vacuum pump 246 may be included in the exhaust system.
- the APC valve 243 is configured so that the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening degree while the vacuum pump 246 is operated.
- a temperature sensor 263 as a temperature detector is installed in the reaction tube 203, and the temperature of the processing chamber 201 is desired by adjusting the amount of electricity supplied to the heater 207 based on the temperature information detected by the temperature sensor 263. It is configured to have a temperature distribution of.
- the temperature sensor 263 is L-shaped like the nozzles 410, 420 and 430, and is provided along the inner wall of the reaction tube 203.
- the controller 130 as a control unit includes a CPU (Central Processing Unit) 130a, a RAM (Random Access Memory) 130b, a storage device 130c as a storage unit, and an I / O port 130d. It is configured as a computer.
- the RAM 130b, the storage device 130c, and the I / O port 130d are configured so that data can be exchanged with the CPU 130a via the internal bus.
- An input / output device 131 as an operation unit configured as, for example, a touch panel is connected to the controller 130.
- the storage device 130c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program for controlling the operation of the board processing device for example, a process recipe in which the board processing procedure and conditions are described, and the like are readablely stored.
- the board layout program described later in this embodiment is stored.
- these process recipes and the like are, for example, combined so that the controller 130 can execute each procedure in the substrate processing and obtain a predetermined result, and functions as a program.
- this process recipe, control program, etc. may be collectively referred to as a program.
- the RAM 130b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 130a are temporarily held.
- the I / O port 130d has the above-mentioned MFC 312,322,332,512,522,532, valve 314,324,334,514,524,534, APC valve 243, pressure sensor 245, vacuum pump 246, heater 207, temperature. It is connected to a sensor 263, a valve rotation mechanism 267, a boat elevator 115, a pod transfer device 118, a wafer transfer mechanism 125, and the like.
- the CPU 130a is configured to read and execute a control program from the storage device 130c and read a process recipe from the storage device 130c in response to an input of an operation command from the operation unit or the like. Then, according to the read process recipe, the CPU 130a adjusts the flow rate of various gases by the MFC 312, 322, 332, 512, 522, 532, opens and closes the valves 314, 324, 334, 514, 524, and 534, and the APC valve 243. Opening / closing operation and pressure adjustment operation based on pressure sensor 245 by APC valve 243, temperature adjustment operation of heater 207 based on temperature sensor 263, start and stop of vacuum pump 246, rotation and rotation speed adjustment operation of boat 217 by boat rotation mechanism 267. , It is configured to control the ascending / descending operation of the boat 217 by the boat elevator 115.
- the controller 130 is not limited to the case where it is configured as a dedicated computer, and may be configured as a general-purpose computer.
- an external storage device for example, a semiconductor memory such as a USB memory
- the controller 130 according to the present embodiment can be installed. Can be configured.
- the means for supplying the program to the computer is not limited to the case of supplying the program via the external storage unit 133.
- a communication means such as the Internet or a dedicated line may be used to supply the program without going through the external storage unit 133.
- the storage device 130c and the external storage unit 133 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium When the term recording medium is used in the present disclosure, it may include only the storage device 130c alone, it may include only the external storage unit 133 alone, or it may include both of them.
- the flowchart of FIG. 5A is a flow from the time when the pod 110 (wafer 200) is loaded into the apparatus to the transfer of the wafer 200 to the boat 217, and the flowchart of FIG. 5B is before the wafer 200 is actually conveyed.
- the "boat map" in the present disclosure is a general term for data, drawings, and the like showing the arrangement of the wafer 200 in a state where the wafer 200 is loaded in the boat 217, and is pseudo to the boat 217 that is simulated.
- An image diagram (for example, see FIG. 8) of a boat 217 holding a plurality of imitated wafers 200 is also included in the “boat map”.
- the transfer controller (not shown in FIG. 4) stores the carrier information of the pod 110. Then, a transport instruction (request) is transmitted to the pod transport device 118 as the transport mechanism. Upon receiving the instruction, the pod transfer device 118 places the pod 110 on the storage shelf 105 and notifies the transfer controller of the completion of transfer. When the pods 110 are placed on the storage shelves 105 in the number required for substrate processing, the transfer controller notifies the controller 130 of the end of transfer.
- the transfer controller 130 upon receiving an execution instruction from the controller 130, it is checked in advance whether the wafer 200 can be transferred, and after the check, the substrate layout data including the boat map is created, and the wafer transfer as a transfer mechanism is performed according to the substrate layout data. It controls the mechanism 125. Then, when the transfer of the wafer 200 to the boat 217 of the wafer transfer mechanism 125 is completed, the transfer controller notifies the controller 130 of the completion of the transfer. In the preliminary check, it is preferable not only to check whether the wafer 200 can be transferred, but also to display a message to the effect that the number of wafers 200 that can be loaded in the boat 217 is different. If such a check is added to the pre-check, for example, when a modification such as a film type change of the device is performed, it is possible to detect whether the substrate layout data is also changed due to the modification before executing the simulation. can.
- the transfer controller is configured to control the pod transfer device 118 and the wafer transfer mechanism 125 as transfer mechanisms. Further, the boat elevator 115 and the boat rotation mechanism 267 may also be included in the transport mechanism. Then, when the transfer of the wafer 200 to the boat 217 is completed, the controller 130 is configured to execute, for example, the above-mentioned process recipe and process the wafer 200.
- a board arrangement program for creating a boat map based on carrier information and the like from a transfer controller is downloaded to the controller 130 so that it can be executed.
- the board placement program is stored in the RAM 130b, and when the board placement program is started, the boat map creation unit is generated in the controller 130.
- the generic name of the data as a result of executing the board placement program by the controller 130 is referred to as "board placement data”. Therefore, the simulation result data, drawings, and the like are also included in the "board layout data”.
- the boat map creation unit receives the data necessary for the simulation from the operation screen of the input / output device 131 or the controller 130, and creates the board transfer data. Then, when the execution instruction is notified from the operation screen of the input / output device 131 or the controller 130, it is checked in advance whether it is possible to create a boat map (or board layout data) based on the created board transfer data. In short, this pre-check is similar to the pre-check in the flowchart of FIG. 5A to check whether the wafer 200 can be transferred.
- the boat map creation unit creates a boat map, and the GUI creates data for screen display from the result and displays it on the operation screen of the input / output device 131 or the controller 130. It is configured as follows.
- FIG. 6 is an example of a flowchart for confirming the transfer status of the wafer 200 before transferring the wafer 200 to the boat 217 in the present embodiment.
- FIG. 6 an example of comparing the already created boat map with the expected wafer 200 arrangement data (boat map) input by the user in advance and confirming the degree of deviation will be described specifically.
- FIG. 6 shows four steps: a step of registering a boat map (S1), a step of setting for executing a simulation (S2), a step of executing a simulation (S3), and a step of outputting a simulation result (S4). Have. Each step will be described below.
- a transfer parameter file (referred to as a WAP file in the present disclosure) that determines the placement of a plurality of various wafers 200 including at least the product wafer 200A and the dummy wafer 200B to be loaded on the boat 217 is selected.
- WAP Wafer Arrangement Parameter
- WAP Wafer Arrangement Parameter
- the slot is a substrate support portion provided for loading the wafer 200 into the boat 217.
- the WAP file for which you want to check the transfer status in advance is selected.
- This transfer parameter file is a file in which this transfer parameter and the setting method are defined.
- this WAP file is stored in the storage device 130c as a reference file.
- the WAP file selected in this step may be compared with the simulation result. Further, a plurality of WAP files are stored in the storage device 130c of the controller 130.
- configuration parameters, function parameters, and maintenance parameters are selected as parameter files related to transport other than the WAP file.
- configuration parameters the parameters related to the information related to the configuration of the transport mechanism and the module configuration are set.
- function parameter parameters related to the transport function such as carrier transfer, wafer transfer, and boat transfer are set, and by selecting the maintenance parameter, the parameter related to the transfer adjustment function such as interlock release is set.
- a screen for selecting a function parameter and specifying a tweezers for each of the product wafer 200A, dummy wafer 200B, and monitor wafer 200C is displayed, and which of the five-wafer tweezers and the single-wafer tweezers is preferentially used is displayed. Parameters are set. Similarly, a screen for selecting the function parameter and specifying the sharing of the dummy wafer 200B is displayed, and the parameter for specifying the transfer of the side dummy wafer 200B1 as the supplementary dummy wafer 200B2 is set.
- wafers 200 when used as a generic term for wafers, they are referred to as wafers 200, and when used by wafer type, they are referred to as product wafers 200A, dummy wafers 200B, monitor wafers 200C, side dummy wafers 200B1, and replenishment dummy wafers 200B2.
- the above-mentioned transport parameter setting and carrier information setting (S2) are configured so that they can be set on the simulation setting screen shown in FIG. 7.
- configuration parameters, function parameters and maintenance parameters can be selected. Specifically, when a cell with a file name is selected and the detail button is pressed, the screen shifts to a screen in which a file list of the selected transport parameters is displayed, and a file can be selected on the screen. Also, here, the name of the WAP file can be confirmed.
- ⁇ indicates the pod 110
- ⁇ square
- a shelf without indicates that the pod 110 is not placed.
- the pod 110 required for processing is selected.
- four pods are selected, but this is just an example.
- the controller 130 compares the created boat map (or board layout data) with the target boat map (or board layout data) registered in advance in the storage device 130c.
- the created boat map is compared with a reference file in which various wafers 200 are set in each slot in advance by a direct method and a desired boat map is created.
- the controller 130 calculates the degree of deviation between the created boat map and the desired boat map. Specifically, the types of wafers 200 loaded in the boat 217 are compared for each slot between the created boat map (or board layout data) and the desired boat map, and it is determined whether they are the same type. This determination is made based on the number of wafers that can be loaded in the boat 217 (total number of slots).
- the controller 130 calculates the ratio of the number of wafers 200 of the same type to the number of wafers 200 that can be loaded in the boat 217 between the boat maps (or board layout data). For example, assuming that the number of wafers that can be loaded in the boat 217 of the controller 130 is 100 and the number of wafers 200 that are different from each other is two, the calculation result is 98%. If the number of wafers 200 is different and the result is thought to be due to an obvious incorrect setting, an error message (not shown) is displayed without moving to the next step. May be good.
- the controller 130 determines that the parameter setting is incorrect, displays an error message, displays only the error (NG) button, and forcibly returns to the selection screen for selecting the WAP file. You may do it.
- the number of wafers 200 that can be loaded in the boat 217 is different, it is preferable to display a message that the number of wafers is different.
- the wafer 200 set by each of the WAP file including the reference file stored in advance in the storage device 130c and the substrate layout data created in S3. If the number of sheets is different, it can be understood that the setting is obvious. As a result, it is possible to prompt to check whether the WAP file including the reference file stored in advance in the storage device 130c is an old file before modification and whether the setting in S2 is incorrect.
- FIG. 8 shows an example of the simulation result.
- the reference boat map and the created boat map are displayed side by side.
- the created boat map displays 98% (hereinafter, also referred to as a match rate), which is the calculation result of the degree of deviation. It may be displayed as 2% because of the degree of deviation.
- at least the arrangement position of the wafer 200 having a different type of the wafer 200 is displayed so as to be known, which is an example.
- FIG. 8 is configured to display the boat map of the portion where the types of the wafers 200 are different, instead of displaying the entire boat map.
- the screen when the abnormality (NG) button is pressed, the screen returns to the selection screen for selecting the WAP file. That is, the process returns to the step (S1) of selecting the WAP file shown in FIG. Check the contents set in the WAP file on this selection screen and correct them as appropriate.
- the degree of deviation is 0%
- press the OK button to save the created boat map and exit.
- the abnormal button may be displayed only so that it cannot be pressed.
- the created WAP file is a desired boat map before actually transporting the wafer 200. Therefore, it is not necessary that the wafer 200 is not in the desired slot of the boat 217 or that the wafer 200 of a different type is loaded. Therefore, it is not necessary to re-execute the process recipe because the arrangement of the wafers 200 loaded on the boat 217 is different, which can contribute to the equipment operating rate and the equipment productivity.
- the boat map registered by the user is a boat made up of WAP files already stored in the storage device 130c. You can check if it matches the map (whether there is a gap). That is, it is possible to search for the WAP file having the highest matching rate (the smallest deviation) by this simulation. Again, as described above, if the number of wafers 200 mounted is different, an error message to that effect may be displayed.
- FIG. 9 shows a step of registering a boat map (S10), a step of setting for executing a simulation (S20), a step of executing a simulation (S30), and a step of outputting a simulation result (S40), as in FIG. ) Has four steps.
- the simulation button When the simulation button is pressed on the WAP selection screen, the simulation setting screen (FIG. 7) is displayed. Here, transport parameters and carrier information are set. Similar to FIG. 6, it is configured to set while displaying various setting screens, but the details of the setting will be described later here.
- the controller 130 searches for the WAP file stored in the storage device 130c, expands it in the RAM 130b, and pre-checks whether the matching is achieved even if the substrate placement program is executed (whether the wafer 200 can be conveyed). It is configured to create a boat map (or board layout data) for all WAP files that are determined to be transportable by the preliminary check.
- the controller 130 has a boat map (or board layout data) created in the same manner as in the first embodiment and a target boat map registered in advance in the storage device 130c for all WAP files determined to be transportable by the preliminary check. (Or board layout data) is compared. Then, the controller 130 calculates a matching rate in which the type of the wafer 200 is the ratio of the number of wafers 200 that can be loaded in the boat 217 between the boat maps (board layout data). For example, assuming that the number of wafers that can be loaded in the boat 217 is 100 and the number of wafers 200 that are different from each other is two, the matching rate is 98%.
- the controller 130 is configured to give priority to the one having a high matching rate and display it on the boat map result screen.
- the boat map may be configured to be displayed side by side in order from the one having the highest matching rate (in the present embodiment, three in the order of the highest matching rate). If there is even one boat map with a matching rate of 100%, only the boat map with 100% is displayed.
- the controller 130 is configured to display the details of the difference from the reference boat map when the boat map image displayed in FIG. 10 is selected. For example, a portion where there is a discrepancy between the boat map created by the transfer parameter and the data indicating the arrangement of the registered boards may be preferentially displayed. Further, the boat map of the portion where the type of the board is different may be displayed with priority.
- the save button is pressed on this screen, the WAP file corresponding to the selected boat map image is saved as the WAP file for creating the target boat map, and the screen returns to the result output screen of FIG.
- the cancel button is pressed, the process simply returns to FIG.
- the matching rate may be displayed in different colors according to the matching rate. For example, if the matching rate is 100%, there is no coloring. If the concordance rate is 95% or more and less than 100%, it may be displayed in blue, if it is 80% or more and less than 95%, it may be displayed in yellow, and if it is less than 80%, it may be displayed in red. Further, in addition to the matching rate, the wafer 200 different from the reference boat map may be displayed in different colors. If the match rate is low, for example, less than 60%, an error message is displayed and an error (NG) button is displayed instead of the screen shown in FIG. 10, and the screen forcibly returns to the parameter selection screen. You may do so.
- NG error
- the boat map image selection screen (screen for confirming the difference from the reference boat map in detail) displayed in FIG. 10, even if the matching rate is not 100%, the processing of the wafer 200 is affected. If not, it may be considered normal (OK).
- the data should be edited to set the matching rate to 100% or the matching rate should be adopted as it is. May be good.
- the screen when the cancel button is further pressed, the screen returns to the WAP selection screen and the saved WAP file can be selected. If the match rate is not 100%, expand the WAP file on this selection screen and make corrections while checking the settings, and press the simulation button to execute the simulation and check the match rate. can do.
- the screen may be configured to return to the simulation setting screen shown in FIG. 7. In this case, not only the WAP file but also other transport parameters and the like can be confirmed.
- FIG. 11 is an example of a flowchart for confirming the transfer status of the wafer 200 before transferring the wafer 200 to the boat 217 in the present embodiment.
- a case of confirming what kind of boat map the created WAP file will be will be described.
- FIG. 11 shows a step of registering a boat map (S1), a step of setting for executing a simulation (S2), a step of executing a simulation (S3), and a step of outputting a simulation result (S4), as in FIG. ) Has four steps. Each step will be described below. In the following, if it is the same as FIG. 6, the description may be omitted.
- step (S1) of selecting the transfer parameter the simulation setting screen shown in FIG. 7 is displayed when the transfer parameter related to the transfer is selected and the simulation button is pressed, as in FIG.
- each transport parameter is set, material information is set, carrier information used is set, and the like are set.
- the setting of each transport parameter the setting of each transport parameter shown in FIG. 7 is performed in the same manner as in the first embodiment.
- the setting of the material information is started by selecting the edit button shown in FIG. 7, and the setting of the used carrier information and the like is started by selecting the change button shown in FIG. 7.
- the material information setting screen shown in FIG. 11 is displayed. Specifically, the area schematically showing the buffer shelves shown in FIG. 7 (here, the shelves in 3 rows and 4 rows and the 2 buffer shelves in 2 rows and 2 rows) is enlarged and displayed on a separate screen, and each buffer shelf is displayed.
- the pod 110 is arranged in the pod 110, and is displayed in different colors according to the type of the wafer 200 stored in the pod 110, and is configured to be editable. Therefore, when the pod 110 (or shelf) arranged at the position set by the above-mentioned transfer parameter, transport parameter, or the like is selected, the material information in the pod 110 can be set. ..
- the process returns to FIG. 7 and the above-mentioned transfer parameters and the above-mentioned transfer parameters are displayed. The setting contents of the transfer parameter are reflected.
- the cancel button is pressed, the process returns to FIG. 7 and the transport parameter is selected again.
- the material information editing screen shown in FIG. 11 is displayed, and the material information (wafer 200) in the selected pod 110 is displayed. Information) can be modified.
- the material information (shelf number, carrier attribute information, carrier number, number of wafers) of the pod 110 is displayed and is configured to be editable, and when a cell showing the carrier attribute information is selected, the attribute information is displayed.
- a screen to select is displayed, and you can change the attributes of the carrier.
- the attribute information there are three types of product wafer 200A, monitor wafer 200C, and dummy wafer 200B, and the dummy wafer 200B includes at least two types of side dummy wafer 200B1 and replenishment dummy wafer 200B2.
- the setting contents are reflected when the OK button (not shown) is pressed, and the setting contents are not reflected when the cancel button is pressed.
- the attribute of the carrier indicates the type of wafer housed in the carrier.
- the carrier setting screen shown in FIG. 11 is displayed, the pods 110 required for the boat map (board layout data) are displayed, and each pod 110 can be edited. It is configured in. Specifically, the area for selecting the material (actually the pod 110) shown in FIG. 7 is enlarged and displayed on a separate screen, and the wafer type stored in the pod 110 together with the selected pod 110 is displayed in different colors. Instead, information on the number of wafers stored in the pod 110 is displayed and is configured to be editable.
- the information of the wafer 200 stored in the pod 110 can be set. It is configured.
- the OK button when the OK button is pressed, the process returns to FIG. 7 and the above-mentioned transfer parameter and transfer parameter settings are reflected. Will be done. If it is canceled, the process returns to FIG. 7 and the transport parameter is selected again.
- the used carrier setting screen shown in FIG. 11 when an arbitrary carrier (pod) 110 is selected on the used carrier setting screen shown in FIG. 11, the used wafer number setting screen shown in FIG. 11 is displayed, and the wafer 200 to be used among the wafers 200 in the pod 110 is displayed. Can be set.
- the wafer 200 stored in the pod 110 is displayed and is editable, and the wafer 200 can be selected by selecting a cell indicating the number of the wafer support portion in the carrier. You can change the presence or absence. As a result, the number of wafers 200 stored in the pod 110 can be arbitrarily changed.
- step (S3) of executing the simulation when the simulation button shown in FIG. 7 is pressed, the controller 130 uses the transfer parameter (WAP file) selected in S1, the transfer parameter set in S20, and the carrier information. Based on the above, board layout data such as a boat map when various wafers 200 are loaded on the boat 217 is created.
- the controller 130 When creating a boat map, the controller 130 includes wafer information such as the type and number of wafers 200 held in the boat 217, the required number of carriers, and carrier attributes (of the wafer 200 stored in the pod 110). Type), carrier information such as the shelf number preset on the shelf on which the pod 110 is placed, the slot number indicating the number of the board support portion provided on the boat 217, the number of times the wafer transfer mechanism 125 is transferred, and the wafer transfer. It is configured to calculate the transfer information such as the order when the wafer 200 is loaded on the boat 217 by the mechanism 125. Then, the controller 130 creates image data related to the substrate layout data including the wafer information, carrier information, transport information, and the like, and displays the image data on the input / output device 131 in an editable manner.
- wafer information such as the type and number of wafers 200 held in the boat 217, the required number of carriers, and carrier attributes (of the wafer 200 stored in the pod 110).
- Type carrier information such as the shelf number prese
- the controller 130 shows, for example, a screen example shown in FIG. 12 as a result of creating board layout data such as a boat map.
- the controller 130 has the type and number of wafers 200 held in the boat 217, the boat map, and the carrier attributes (FIG. 13) based on the transfer parameters selected in S1 and various transport parameters set in S2.
- the wafer transfer mechanism 125 is configured to be able to display substrate arrangement data such as a transfer order in which the wafer 200 is loaded into the slot number.
- the cancel button can be pressed to return to the screen for selecting the WAP file, and the simulation can be repeated. Then, the transport parameters can be corrected each time the operation is repeated, and the screen shown in FIG. 12 can be displayed many times to confirm the board layout data.
- the time required for confirming the arrangement of the wafers 200 or confirming whether or not the wafers are in a predetermined transfer order it is possible to eliminate the difference in wafer arrangement between the user and the controller and prevent a setting error.
- the number of times the wafer 200 is transferred to the boat 217 may vary depending on the setting of the transfer parameter, and it is possible to set the optimum transfer parameter that can minimize the number of transfer.
- the present embodiment it is possible to confirm whether the created WAP file has a desired boat map before actually transporting the wafer 200.
- (2) According to the present embodiment it is possible to confirm what kind of boat map will be obtained by the created WAP file without actually transporting the wafer 200.
- (3) According to the present embodiment if a desired boat map is input in advance, the optimum WAP file can be searched by comparing with the boat map by the WAP file stored in advance, so that the WAP file can be searched. It is possible to shorten the time compared to creating a new file, and it is possible to create a WAP file with extremely few transfer errors due to incorrect settings.
- Step S101 is a step of creating a WAP file used for creating a recipe. Basically, the WAP file stored in the storage device 130c is selected. However, the WAP file created by the above simulation shown in FIG. 5B may be used.
- Step S102 is a step of acquiring the WAP file created by the above-mentioned simulation shown in FIG. 5B. Specifically, in the case of the controller 130, the control unit of FIG. 5B downloads the WAP file obtained by the simulation to the transfer controller, and the transfer controller reads and expands the WAP file. When creating a recipe for processing the wafer 200 by using the WAP file stored in the storage device 130c, step S102 is skipped and the process proceeds to step S103.
- control unit of FIG. 5B does not have to be the controller 130, and may be configured as a general-purpose computer.
- it may be a commercially available personal computer (hereinafter abbreviated as PC).
- PC personal computer
- such a PC may be arranged at a position away from the substrate processing device 100 (conveyor controller).
- the boat map creation unit is constructed inside the PC and the board placement program can be executed.
- Step S103 is a step of creating a recipe for processing the wafer 200.
- This recipe creation is performed by selecting a process recipe stored in the storage device 130c.
- the WAP file may be pre-associated with the process recipe. If associated with a process recipe, the WAP file is also selected in the process recipe selection. On the other hand, if it is not associated with the process recipe, a separate WAP file may be selected. Also, the process recipe and the WAP file may be associated with each other. In this case, the WAP file is also selected by selecting the process recipe, and the process recipe is selected by selecting the WAP file.
- step S104 the controller 130 is configured to execute the substrate processing step of processing the substrate by executing the recipe created in step S103.
- This substrate processing process is, for example, one process for manufacturing a semiconductor device.
- the operation and processing of each part constituting the substrate processing apparatus 100 are controlled by the controller 130.
- a predetermined film may be formed in advance on the wafer 200, or a predetermined pattern may be formed in advance on the wafer 200 or the predetermined film.
- a film forming step of forming a film on the surface of the wafer 200 is performed.
- the film forming step sequentially executes the following four steps. During the following steps 1 to 4, the wafer 200 is heated to a predetermined temperature by the heater 206. Also, the pressure is maintained at a predetermined pressure.
- step 1 the raw material gas is flowed.
- the valve provided in the raw material gas supply pipe 232a and the APC valve 243 provided in the exhaust pipe 231 are both opened, and the raw material gas whose flow rate is adjusted by the MFC 241a is passed through the nozzle and supplied to the processing chamber 201 while being supplied to the exhaust pipe 231. Exhaust from. At this time, the pressure in the processing chamber 201 is kept at a predetermined pressure. As a result, a silicon thin film is formed on the surface of the wafer 200.
- Step 2 the valve of the raw material gas supply pipe 232a is closed to stop the supply of the raw material gas.
- the APC valve 243 of the exhaust pipe 231 is left open, the processing chamber 201 is exhausted by the vacuum pump 246, and the residual gas is discharged from the processing chamber 201.
- step 3 the reaction gas is flowed.
- the valve provided in the reaction gas supply pipe 232b and the APC valve 243 provided in the exhaust pipe 231 are both opened, and the NH3 gas whose flow rate is adjusted by the MFC 241b is supplied from the nozzle 230b to the processing chamber 201 from the exhaust pipe 231. Exhaust. Further, the pressure in the processing chamber 201 is adjusted to a predetermined pressure. By supplying the reaction gas, the thin film formed on the surface of the wafer 200 by the raw material gas reacts with the surface of the reaction gas to form a predetermined film on the wafer 200.
- Step 4 the treatment chamber 201 is purged with the inert gas again.
- the valve of the reaction gas supply pipe 232b is closed to stop the supply of the reaction gas.
- the APC valve 243 of the exhaust pipe 231 is left open, the processing chamber 201 is exhausted by the vacuum pump 246, and the residual gas is discharged from the processing chamber 201.
- the above steps 1 to 4 are set as one cycle, and a predetermined film is formed on the wafer 200 by repeating this cycle a plurality of times.
- the recipe is created using the boat map simulator, it is possible to grasp where the wafer 200 is transferred to the boat 217, and if the transfer position of the wafer 200 is erroneously set. You can find it even if there is one. Therefore, it is possible to suppress erroneous setting of the transfer position of the wafer 200. As a result, even if the recipe is executed, the loss of the substrate due to the erroneous setting of the wafer 200 is prevented.
- the optimum transfer parameter file can be obtained by the boat map simulator, and as a result, the recipe with the optimum processing conditions can be created. Yes, for example, if you select a transfer parameter file that has the shortest transfer time, you can expect an improvement in throughput. Further, for example, by selecting the transfer parameter file under the condition that the number of transfer times is the smallest, the maintenance cycle of the transfer machine can be lengthened.
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Abstract
Description
図2および図3に示す通り、処理炉202にはウエハ(基板)200を加熱するための加熱部であるヒータ207が設けられている。ヒータ207の内側には、ヒータ207と同心円状に反応容器(処理容器)を構成する反応管203が配設されている。反応管203は例えば石英(SiO2)等の耐熱性材料により構成され、上端が閉塞し下端が開口した円筒形状に形成されている。
図5Bに示すフローチャートの詳細について図6を用いて説明する。図6は、本実施形態におけるウエハ200をボート217に移載する前にウエハ200の移載状況を確認するためのフローチャートの一例である。ここでは、すでに作成したボートマップと予めユーザが入力していた期待するウエハ200の配置データ(ボートマップ)を比較し、ズレ具合を確認する一例に特化して説明する。
ボート217に装填する予定の少なくとも製品ウエハ200Aとダミーウエハ200Bを含む複数枚の各種ウエハ200の配置を決定する移載パラメータファイル(本開示ではWAPファイルと称する)を選択する。この移載パラメータとしてのWAP(Wafer Arrangement Parameter)は、ウエハ200の枚数や装填方式を設定してコントローラ130が自動的にボートマップを決定する論理方式と、ボート217のスロット毎に装填するウエハの種別を設定する直接方式がある。スロットとは、ボート217にウエハ200を装填するために設けられる基板支持部である。ここでは、予め移載状況を確認したいWAPファイルが選択される。ここで、WAPファイルにおける、ウエハ200を配置する設定方法として、枚数や移載方式を設定してコントローラが自動的にボートマップを決定する論理方式とボート217のスロット毎に装填するウエハ200の種別を設定する直接方式がある。この移載パラメータファイル(WAPファイル)は、この移載パラメータと設定方法が定義されたファイルである。
次に、WAPファイル以外の搬送に関するパラメータファイルとして、コンフィグレーションパラメータ、ファンクションパラメータ、メンテナンスパラメータが選択される。コンフィグレーションパラメータを選択することにより、搬送機構の構成、モジュール構成に関する情報に関するパラメータが設定される。ファンクションパラメータを選択することにより、キャリア搬送、ウエハ移載、ボート搬送など搬送機能に関するパラメータが設定され、メンテナンスパラメータを選択することにより、インターロック解除など搬送の調整機能に関するパラメータが設定される。具体的には、ファンクションパラメータを選択し、製品ウエハ200A、ダミーウエハ200B、モニタウエハ200Cのそれぞれでツィーザ指定を行う画面が表示され、そこで5枚ツィーザと枚葉ツィーザのどちらを優先的に使用するかのパラメータが設定される。また、同様にファンクションパラメータを選択し、ダミーウエハ200B共有指定を行う画面が表示され、サイドダミーウエハ200B1を補充ダミーウエハ200B2として移載する指定を行うパラメータが設定される。以下、ウエハの総称として使用する場合、ウエハ200と称し、ウエハ種別で使用する場合は、製品ウエハ200A、ダミーウエハ200B、モニタウエハ200C、サイドダミーウエハ200B1、補充ダミーウエハ200B2と称する。
ポッド110に収納されるウエハの種別やそれぞれのウエハ枚数、ポッド110のバッファ棚への配置位置等を含むキャリア情報を設定し、ボート217に装填される予定の各種ウエハ200が収納されるポッド110を選択する。
コントローラ130は、図7に示すシミュレートボタンが押下されると、コントローラ130は、S1およびS2で設定された移載パラメータ、キャリア情報等に基づいて、各種ウエハ200をボート217に装填させた場合のボートマップ等の基板配置データを作成する。また、基準ファイルとして予め保存しておいたWAPファイルに基づき、各種ウエハ200をボート217に装填させた場合のボートマップ等の基板配置データを作成する。
図8にシミュレーション結果の一例を示す。ここでは基準となるボートマップと作成されたボートマップを並べて表示している。そして、作成されたボートマップはズレ具合の演算結果である98%(以下、一致率ともいう)を表示している。ズレ具合ということで2%と表示するようにしてもよい。また、少なくともウエハ200の種別が異なっていたウエハ200の配置位置が分かるように表示しているが、一例である。図8は、ボートマップ全体を表示するのではなく、ウエハ200の種別が異なっていた部分のボートマップを表示するよう構成されている。
図5Bに示すフローチャートの詳細について図9を用いて説明する。例えば、ユーザが期待するボートマップになるようなWAPファイルを作成したい場合、図9に示すフローを利用すると、ユーザが登録したボートマップが既に記憶装置130cに記憶されたWAPファイルから成されるボートマップに一致するか(ズレがあるか)確認することができる。つまり、このシミュレーションにより一致率が最も高い(ズレ具合が最も小さい)WAPファイルを探索することができる。ここでも上述のように、ウエハ200の搭載枚数が異なっていたらその旨のエラーメッセージが表示されるように構成してもよい。
ここでは、WAPファイルを選択し、直接入力方式により、各種ウエハ200の配置を設定して、WAPファイルを記憶装置130cに保存する。そして、WAP選択画面で保存したWAPファイルを選択してシミュレーションボタンを押下する。
WAP選択画面でシミュレーションボタンが押下されると、シミュレーション設定画面(図7)が表示される。ここでは、搬送パラメータやキャリア情報が設定される。図6と同様に各種設定画面を表示しつつ設定するように構成されているが、ここでは設定の詳細は後述する。
図7に示すシミュレートボタンが押下されると、コントローラ130は、S10で設定されたボートマップ、S20で設定された搬送パラメータ、キャリア情報等に基づいて、各種ウエハ200をボート217に装填させた場合のボートマップ等の基板配置データを作成する。
コントローラ130は、ボートマップを比較した結果、一致率が高いものを優先してボートマップ結果画面に表示するように構成されている。例えば、図10に示すように、基準となるボートマップと一致率が高いものから順に(本実施形態では、一致率が高いもの順に3つ)並べて表示するように構成してもよい。なお、一致率が100%のボートマップが一つでもあれば、100%のボートマップだけを表示するように構成されている。
図5Bに示すフローチャートの詳細について図11を用いて説明する。図11は、本実施形態におけるウエハ200をボート217に移載する前にウエハ200の移載状況を確認するためのフローチャートの一例である。ここでは、作成したWAPファイルがどのようなボートマップになるか確認する場合について説明する。
上述のように本実施形態によれば、以下に示す一つまたは複数の効果を奏する。
(2)本実施形態によれば、作成したWAPファイルにより、どのようなボートマップになるかを、実際にウエハ200を搬送することなく確認することができる。
(3)本実施形態によれば、予め所望のボートマップを入力すれば、予め記憶されているWAPファイルによるボートマップと比較することにより、最適なWAPファイルを検索することができるので、WAPファイルを新規に作成するよりも時間短縮が可能であり、且つ誤設定による搬送エラーが極めて少ないWAPファイルを作成することができる。
まず、ウエハ200をボート217に装填し、処理室201へ搬入する基板搬入工程が行われる。
次に、ウエハ200の表面上に膜を形成する成膜工程を行う。成膜工程は次の4つのステップを順次実行する。なお、下記ステップ1~4の間は、ヒータ206により、ウエハ200を所定の温度に加熱しておく。また、圧力も所定の圧力に維持される。
ステップ1では、原料ガスを流す。まず、原料ガス供給管232aに設けたバルブと排気管231に設けたAPCバルブ243を共に開けて、MFC241aにより流量調節された原料ガスをノズルに通し、処理室201に供給しつつ、排気管231から排気する。この際、処理室201の圧力を所定の圧力に保つ。これにより、ウエハ200の表面にシリコン薄膜を形成する。
ステップ2では、原料ガス供給管232aのバルブを閉めて原料ガスの供給を止める。排気管231のAPCバルブ243は開いたままにし、真空ポンプ246により処理室201を排気し、残留ガスを処理室201から排除する。
ステップ3では、反応ガスを流す。反応ガス供給管232bに設けられた、バルブと排気管231に設けられたAPCバルブ243を共に開け、MFC241bにより流量調節されたNH3ガスをノズル230bから処理室201に供給しつつ、排気管231から排気する。また、処理室201の圧力を所定の圧力に調整する。反応ガスの供給により、原料ガスがウエハ200の表面に形成した薄膜と反応ガスが表面反応して、ウエハ200上に所定の膜が形成される。
ステップ4では、再び不活性ガスによる処理室201のパージを行う。反応ガス供給管232bのバルブを閉めて、反応ガスの供給を止める。排気管231のAPCバルブ243は開いたままにし、真空ポンプ246により処理室201を排気し、残留ガスを処理室201から排除する。
次に、所定の膜が形成されたウエハ200が載置されたボート217を、処理室201から搬出する。
本明細書に記載された全ての文献、特許出願、および技術規格は、個々の文献、特許出願、および技術規格が参照により取り込まれることが具体的かつ個々に記された場合と同程度に、本明細書中に参照により取り込まれる。
Claims (16)
- 基板保持具に装填する予定の少なくとも基板の配置を決定する移載パラメータと、前記基板保持具に装填される予定の前記基板が収納されるキャリア情報をそれぞれ設定させる設定工程と、
該設定された前記移載パラメータ、前記キャリア情報に基づいて、前記基板を前記基板保持具に装填させた場合の基板配置データを作成する作成工程と、
前記基板配置データを表示する際、少なくとも前記基板が前記基板保持具に装填された状態の前記基板の配置を示すデータを表示する表示工程と、
を有する基板配置データの表示方法。 - 前記作成工程は、該作成された基板配置データと予め登録された目標とする基板配置データとを比較して、前記作成された基板配置データと前記目標とする基板配置データとの間のズレ具合を算出する算出工程を有する請求項1記載の基板配置データの表示方法。
- 前記算出工程では、前記基板保持具に装填される基板の種別を比較する請求項2記載の基板配置データの表示方法。
- 前記算出工程では、前記基板保持具に装填可能な基板の枚数に対する、前記基板配置データ間において前記基板の種別が異なっていた基板の枚数の割合を演算する請求項2記載の基板配置データの表示方法。
- 前記表示工程では、前記ズレ具合を表示する際、前記基板配置データ間において前記基板の種別が異なっていた部分の前記基板配置データを優先して表示する請求項2記載の基板配置データの表示方法。
- 更に、前記作成された基板配置データを修正する修正工程を有し、
前記修正工程では、前記基板配置データの作成で使用した前記移載パラメータに設定された内容を修正する請求項1記載の基板配置データの表示方法。 - 更に、前記基板が前記基板保持具に装填された状態の前記基板の配置を示すデータを登録する登録工程を有し、
前記作成工程では、予め記憶された複数の前記移載パラメータにより作成される基板配置データと登録された前記基板の配置を示すデータとの間の一致率を算出する請求項1記載の基板配置データの表示方法。 - 前記表示工程では、100%-ズレ具合(%)で演算される前記一致率が高いほうを優先して表示する請求項7記載の基板配置データの表示方法。
- 前記表示工程では、選択された前記移載パラメータにより作成される基板配置データと登録された前記基板の配置を示すデータとの間のズレが生じている部分を優先して表示する請求項7記載の基板配置データの表示方法。
- 更に、前記作成された基板配置データを修正する修正工程と、
選択された前記移載パラメータにより作成された基板配置データを保存する保存工程と、を有し、
前記修正工程では、前記保存された前記移載パラメータに設定された内容を修正する請求項9記載の基板配置データの表示方法。 - 前記設定工程では、更に、前記基板を前記基板保持具に搬送する搬送機構に関する搬送パラメータを設定する請求項1記載の基板配置データの表示方法。
- 前記搬送パラメータには、少なくとも搬送機構の構成に関する情報に関するパラメータ、ウエハ移載を含む搬送機能に関するパラメータ、保守時における搬送機構の調整機能に関するパラメータよりなる群から少なくとも一つが設定される請求項11記載の基板配置データの表示方法。
- 前記作成工程では、前記基板保持具に保持されている前記基板の種別及び枚数、キャリアに収納されているウエハの種別で決定されるキャリア属性、前記基板保持具に設けられる基板支持部の番号を示すスロット番号、前記基板を搬送機構が搬送した搬送回数、搬送機構により前記基板がスロット番号に装填される搬送順序よりなる群から少なくとも一つが算出される請求項1記載の基板配置データの表示方法。
- 基板保持具に装填する予定の少なくとも基板の配置を決定する移載パラメータと、前記基板保持具に装填される予定の前記基板が収納されるキャリア情報をそれぞれ設定させる工程と、
該設定された前記移載パラメータ、前記キャリア情報に基づいて、前記基板を前記基板保持具に装填させた場合の基板配置データを作成する工程と、
前記基板配置データを表示する際、少なくとも前記基板が前記基板保持具に装填された状態の前記基板の配置を示すデータを表示する工程と、
前記基板配置データに基づいて、前記基板を搬送する工程と、
を有する半導体装置の製造方法。 - 基板保持具に装填される予定の少なくとも基板の配置を決定する移載パラメータと、前記基板保持具に装填される予定の基板が収納されるキャリア情報をそれぞれ設定する手順と、
該設定された前記移載パラメータ、前記キャリア情報に基づいて、前記基板を前記基板保持具に装填させた場合の基板配置データを作成する手順と、
前記基板配置データを表示する際、少なくとも前記基板が前記基板保持具に装填された状態の前記基板の配置を示すデータを表示する手順と、
を有するプログラムを基板処理装置に実行させるプログラム。 - 基板を処理する処理室と、
前記基板を保持する基板保持具と、
前記基板を前記基板保持具に装填する搬送機構と、
前記搬送機構を制御する制御部と、を備えた基板処理装置であって、
前記制御部は、
基板保持具に装填される予定の少なくとも基板の配置を決定する移載パラメータと、前記基板保持具に装填される予定の前記基板が収納されるキャリア情報をそれぞれ設定し、該設定された前記移載パラメータ、前記キャリア情報に基づいて、前記基板を前記基板保持具に装填させた場合の基板配置データを作成し、前記基板配置データを表示する際、少なくとも前記基板が前記基板保持具に装填された状態の前記基板の配置を示すデータを表示するよう構成されている基板処理装置。
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CN202180063598.7A CN116195038A (zh) | 2020-09-25 | 2021-08-06 | 基板配置数据的显示方法、半导体装置的制造方法以及基板处理装置和程序 |
JP2022551186A JP7465360B2 (ja) | 2020-09-25 | 2021-08-06 | 基板配置データの表示方法、半導体装置の製造方法及び基板処理装置並びにプログラム |
KR1020237009377A KR20230050461A (ko) | 2020-09-25 | 2021-08-06 | 기판 배치 데이터의 표시 방법, 반도체 장치의 제조 방법 및 기판 처리 장치 및 프로그램 |
EP21872014.2A EP4220691A1 (en) | 2020-09-25 | 2021-08-06 | Method for displaying substrate positioning data, method for manufacturing semiconductor device, substrate processing device, and program |
TW110135047A TWI802016B (zh) | 2020-09-25 | 2021-09-22 | 基板配置資料之表示方法、半導體裝置之製造方法及基板處理裝置暨程式 |
US18/190,431 US20230238263A1 (en) | 2020-09-25 | 2023-03-27 | Method of displaying substrate arrangement data, method of manufacturing semiconductor device, non-transitory computer-readable recording mendium and substrate processing apparatus |
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JP2009135418A (ja) | 2007-11-05 | 2009-06-18 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2009231748A (ja) | 2008-03-25 | 2009-10-08 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2020160829A (ja) | 2019-03-27 | 2020-10-01 | シャープ株式会社 | 画像処理装置及び画像処理方法 |
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WO2019021465A1 (ja) * | 2017-07-28 | 2019-01-31 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置及びプログラム |
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JPH11121586A (ja) * | 1997-10-20 | 1999-04-30 | Kokusai Electric Co Ltd | ウェーハボート管理システム |
JP2009135418A (ja) | 2007-11-05 | 2009-06-18 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2009231748A (ja) | 2008-03-25 | 2009-10-08 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2020160829A (ja) | 2019-03-27 | 2020-10-01 | シャープ株式会社 | 画像処理装置及び画像処理方法 |
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