CN110283532B - 具有增强缺陷抑制的抛光组合物和抛光衬底方法 - Google Patents

具有增强缺陷抑制的抛光组合物和抛光衬底方法 Download PDF

Info

Publication number
CN110283532B
CN110283532B CN201910191269.5A CN201910191269A CN110283532B CN 110283532 B CN110283532 B CN 110283532B CN 201910191269 A CN201910191269 A CN 201910191269A CN 110283532 B CN110283532 B CN 110283532B
Authority
CN
China
Prior art keywords
mechanical polishing
chemical
formula
polishing composition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910191269.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN110283532A (zh
Inventor
郭毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of CN110283532A publication Critical patent/CN110283532A/zh
Application granted granted Critical
Publication of CN110283532B publication Critical patent/CN110283532B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201910191269.5A 2018-03-15 2019-03-13 具有增强缺陷抑制的抛光组合物和抛光衬底方法 Active CN110283532B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/922054 2018-03-15
US15/922,054 US10683439B2 (en) 2018-03-15 2018-03-15 Polishing composition and method of polishing a substrate having enhanced defect inhibition

Publications (2)

Publication Number Publication Date
CN110283532A CN110283532A (zh) 2019-09-27
CN110283532B true CN110283532B (zh) 2021-06-22

Family

ID=67905197

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910191269.5A Active CN110283532B (zh) 2018-03-15 2019-03-13 具有增强缺陷抑制的抛光组合物和抛光衬底方法

Country Status (5)

Country Link
US (1) US10683439B2 (https=)
JP (1) JP7359554B2 (https=)
KR (1) KR102762648B1 (https=)
CN (1) CN110283532B (https=)
TW (1) TWI820091B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11274230B1 (en) * 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102206465A (zh) * 2010-03-31 2011-10-05 罗门哈斯电子材料Cmp控股股份有限公司 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法
CN103937411A (zh) * 2006-07-24 2014-07-23 卡伯特微电子公司 用于介电膜的提高速率的化学机械抛光组合物

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139571A (en) 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
TW554258B (en) * 2000-11-30 2003-09-21 Tosoh Corp Resist stripper
JP3440419B2 (ja) 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
TW200424299A (en) 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP2004247542A (ja) * 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP4608856B2 (ja) * 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP4974447B2 (ja) 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2005268665A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
DE102006013728A1 (de) * 2005-03-28 2006-10-19 Samsung Corning Co., Ltd., Suwon Verfahren zum Herstellen einer Polierslurry mit hoher Dispersionsstabilität
US7452481B2 (en) 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
WO2007130350A1 (en) 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
JP5275595B2 (ja) * 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
JP6250454B2 (ja) * 2014-03-27 2017-12-20 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
US9305794B2 (en) * 2014-04-07 2016-04-05 Macronix International Co., Ltd. Etching method and etching composition
JP6174625B2 (ja) * 2015-05-22 2017-08-02 株式会社フジミインコーポレーテッド 研磨方法及び組成調整剤

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103937411A (zh) * 2006-07-24 2014-07-23 卡伯特微电子公司 用于介电膜的提高速率的化学机械抛光组合物
CN102206465A (zh) * 2010-03-31 2011-10-05 罗门哈斯电子材料Cmp控股股份有限公司 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法

Also Published As

Publication number Publication date
JP7359554B2 (ja) 2023-10-11
US10683439B2 (en) 2020-06-16
CN110283532A (zh) 2019-09-27
TW201938749A (zh) 2019-10-01
US20190284435A1 (en) 2019-09-19
KR102762648B1 (ko) 2025-02-04
KR20190109265A (ko) 2019-09-25
JP2019163457A (ja) 2019-09-26
TWI820091B (zh) 2023-11-01

Similar Documents

Publication Publication Date Title
TWI508154B (zh) 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法
TWI500750B (zh) 包含多晶矽、氧化矽及氮化矽之基板的研磨方法
TWI500749B (zh) 使用適用於增加氧化矽移除之研磨組成物化學機械研磨基板之方法
KR102322420B1 (ko) 저결점의 화학적 기계적 폴리싱 조성물
CN111471401B (zh) 具有增强的缺陷抑制的酸性抛光组合物和抛光衬底的方法
CN110283532B (zh) 具有增强缺陷抑制的抛光组合物和抛光衬底方法
TWI496878B (zh) 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法
KR20190057084A (ko) 텅스텐을 위한 화학 기계적 연마 방법
CN115247028B (zh) 具有增强的缺陷减少的抛光组合物和抛光衬底的方法
US9293339B1 (en) Method of polishing semiconductor substrate
CN115247027B (zh) 具有增强的缺陷抑制的抛光组合物和抛光衬底的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.

CP03 Change of name, title or address