TWI820091B - 具有增強缺陷抑制之拋光組合物及拋光基板方法 - Google Patents

具有增強缺陷抑制之拋光組合物及拋光基板方法 Download PDF

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Publication number
TWI820091B
TWI820091B TW108107203A TW108107203A TWI820091B TW I820091 B TWI820091 B TW I820091B TW 108107203 A TW108107203 A TW 108107203A TW 108107203 A TW108107203 A TW 108107203A TW I820091 B TWI820091 B TW I820091B
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TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
weight
formula
Prior art date
Application number
TW108107203A
Other languages
English (en)
Chinese (zh)
Other versions
TW201938749A (zh
Inventor
毅 郭
Original Assignee
美商羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 美商羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW201938749A publication Critical patent/TW201938749A/zh
Application granted granted Critical
Publication of TWI820091B publication Critical patent/TWI820091B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW108107203A 2018-03-15 2019-03-05 具有增強缺陷抑制之拋光組合物及拋光基板方法 TWI820091B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/922054 2018-03-15
US15/922,054 US10683439B2 (en) 2018-03-15 2018-03-15 Polishing composition and method of polishing a substrate having enhanced defect inhibition

Publications (2)

Publication Number Publication Date
TW201938749A TW201938749A (zh) 2019-10-01
TWI820091B true TWI820091B (zh) 2023-11-01

Family

ID=67905197

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108107203A TWI820091B (zh) 2018-03-15 2019-03-05 具有增強缺陷抑制之拋光組合物及拋光基板方法

Country Status (5)

Country Link
US (1) US10683439B2 (https=)
JP (1) JP7359554B2 (https=)
KR (1) KR102762648B1 (https=)
CN (1) CN110283532B (https=)
TW (1) TWI820091B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11274230B1 (en) * 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
TW201139635A (en) * 2010-03-31 2011-11-16 Rohm & Haas Elect Mat Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
TW201546253A (zh) * 2014-03-27 2015-12-16 福吉米股份有限公司 矽材料研磨用組成物

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US5139571A (en) 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
TW554258B (en) * 2000-11-30 2003-09-21 Tosoh Corp Resist stripper
JP3440419B2 (ja) 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
TW200424299A (en) 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP2004247542A (ja) * 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP4608856B2 (ja) * 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP4974447B2 (ja) 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2005268665A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
DE102006013728A1 (de) * 2005-03-28 2006-10-19 Samsung Corning Co., Ltd., Suwon Verfahren zum Herstellen einer Polierslurry mit hoher Dispersionsstabilität
US7452481B2 (en) 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
WO2007130350A1 (en) 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
JP5275595B2 (ja) * 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
US9305794B2 (en) * 2014-04-07 2016-04-05 Macronix International Co., Ltd. Etching method and etching composition
JP6174625B2 (ja) * 2015-05-22 2017-08-02 株式会社フジミインコーポレーテッド 研磨方法及び組成調整剤

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
TW201139635A (en) * 2010-03-31 2011-11-16 Rohm & Haas Elect Mat Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
TW201546253A (zh) * 2014-03-27 2015-12-16 福吉米股份有限公司 矽材料研磨用組成物

Also Published As

Publication number Publication date
CN110283532B (zh) 2021-06-22
JP7359554B2 (ja) 2023-10-11
US10683439B2 (en) 2020-06-16
CN110283532A (zh) 2019-09-27
TW201938749A (zh) 2019-10-01
US20190284435A1 (en) 2019-09-19
KR102762648B1 (ko) 2025-02-04
KR20190109265A (ko) 2019-09-25
JP2019163457A (ja) 2019-09-26

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