KR102762648B1 - 결함 억제를 증가시킨 폴리싱 조성물 및 기판의 폴리싱 방법 - Google Patents

결함 억제를 증가시킨 폴리싱 조성물 및 기판의 폴리싱 방법 Download PDF

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Publication number
KR102762648B1
KR102762648B1 KR1020190028590A KR20190028590A KR102762648B1 KR 102762648 B1 KR102762648 B1 KR 102762648B1 KR 1020190028590 A KR1020190028590 A KR 1020190028590A KR 20190028590 A KR20190028590 A KR 20190028590A KR 102762648 B1 KR102762648 B1 KR 102762648B1
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KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
substrate
polishing composition
polishing
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KR1020190028590A
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English (en)
Korean (ko)
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KR20190109265A (ko
Inventor
궈 이
Original Assignee
듀폰 일렉트로닉 머티리얼스 홀딩, 인코포레이티드
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Application filed by 듀폰 일렉트로닉 머티리얼스 홀딩, 인코포레이티드 filed Critical 듀폰 일렉트로닉 머티리얼스 홀딩, 인코포레이티드
Publication of KR20190109265A publication Critical patent/KR20190109265A/ko
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/304—
    • H01L21/31051—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020190028590A 2018-03-15 2019-03-13 결함 억제를 증가시킨 폴리싱 조성물 및 기판의 폴리싱 방법 Active KR102762648B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/922,054 2018-03-15
US15/922,054 US10683439B2 (en) 2018-03-15 2018-03-15 Polishing composition and method of polishing a substrate having enhanced defect inhibition

Publications (2)

Publication Number Publication Date
KR20190109265A KR20190109265A (ko) 2019-09-25
KR102762648B1 true KR102762648B1 (ko) 2025-02-04

Family

ID=67905197

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190028590A Active KR102762648B1 (ko) 2018-03-15 2019-03-13 결함 억제를 증가시킨 폴리싱 조성물 및 기판의 폴리싱 방법

Country Status (5)

Country Link
US (1) US10683439B2 (https=)
JP (1) JP7359554B2 (https=)
KR (1) KR102762648B1 (https=)
CN (1) CN110283532B (https=)
TW (1) TWI820091B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11274230B1 (en) * 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247542A (ja) 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP2006324639A (ja) 2005-05-16 2006-11-30 Kobe Steel Ltd 研磨スラリーおよびウエハ再生方法
JP2009054935A (ja) 2007-08-29 2009-03-12 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物および研磨方法
JP2015191966A (ja) 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物

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Publication number Priority date Publication date Assignee Title
US5139571A (en) 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
TW554258B (en) * 2000-11-30 2003-09-21 Tosoh Corp Resist stripper
JP3440419B2 (ja) 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
TW200424299A (en) 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP4608856B2 (ja) * 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP4974447B2 (ja) 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2005268665A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
DE102006013728A1 (de) * 2005-03-28 2006-10-19 Samsung Corning Co., Ltd., Suwon Verfahren zum Herstellen einer Polierslurry mit hoher Dispersionsstabilität
WO2007130350A1 (en) 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US9305794B2 (en) * 2014-04-07 2016-04-05 Macronix International Co., Ltd. Etching method and etching composition
JP6174625B2 (ja) * 2015-05-22 2017-08-02 株式会社フジミインコーポレーテッド 研磨方法及び組成調整剤

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247542A (ja) 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP2006324639A (ja) 2005-05-16 2006-11-30 Kobe Steel Ltd 研磨スラリーおよびウエハ再生方法
JP2009054935A (ja) 2007-08-29 2009-03-12 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物および研磨方法
JP2015191966A (ja) 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物

Also Published As

Publication number Publication date
CN110283532B (zh) 2021-06-22
JP7359554B2 (ja) 2023-10-11
US10683439B2 (en) 2020-06-16
CN110283532A (zh) 2019-09-27
TW201938749A (zh) 2019-10-01
US20190284435A1 (en) 2019-09-19
KR20190109265A (ko) 2019-09-25
JP2019163457A (ja) 2019-09-26
TWI820091B (zh) 2023-11-01

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