CN110265356B - 基于石墨烯的氮化镓外延层剥离方法 - Google Patents
基于石墨烯的氮化镓外延层剥离方法 Download PDFInfo
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- CN110265356B CN110265356B CN201910544984.2A CN201910544984A CN110265356B CN 110265356 B CN110265356 B CN 110265356B CN 201910544984 A CN201910544984 A CN 201910544984A CN 110265356 B CN110265356 B CN 110265356B
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Abstract
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201910544984.2A CN110265356B (zh) | 2019-06-21 | 2019-06-21 | 基于石墨烯的氮化镓外延层剥离方法 |
US16/905,147 US11133185B2 (en) | 2019-06-21 | 2020-06-18 | Epitaxial lift-off process of graphene-based gallium nitride |
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CN201910544984.2A CN110265356B (zh) | 2019-06-21 | 2019-06-21 | 基于石墨烯的氮化镓外延层剥离方法 |
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CN110265356A CN110265356A (zh) | 2019-09-20 |
CN110265356B true CN110265356B (zh) | 2021-04-06 |
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Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110729182A (zh) * | 2019-10-08 | 2020-01-24 | 苏州纳维科技有限公司 | 一种高质量自支撑氮化物衬底的制备方法及生长结构 |
CN111584627A (zh) * | 2020-05-28 | 2020-08-25 | 西安电子科技大学芜湖研究院 | 一种近似同质外延hemt器件结构及其制备方法 |
CN112436380B (zh) * | 2020-11-19 | 2022-02-18 | 清华大学 | 基于范德华外延的垂直腔面发射激光器及其制作方法 |
CN112670160B (zh) * | 2020-12-22 | 2022-12-09 | 中国科学院半导体研究所 | 分子束外延兼容的二维材料衬底的制备方法 |
CN113078044A (zh) * | 2021-03-25 | 2021-07-06 | 中国科学院上海微系统与信息技术研究所 | 一种介电材料的制备方法及半导体结构 |
CN113078053B (zh) * | 2021-03-25 | 2024-02-27 | 中国科学院上海微系统与信息技术研究所 | 一种顶栅结构的制备方法及半导体结构 |
CN113078054A (zh) * | 2021-03-25 | 2021-07-06 | 中国科学院上海微系统与信息技术研究所 | 一种电极层的制备方法及半导体结构 |
CN113078052A (zh) * | 2021-03-25 | 2021-07-06 | 中国科学院上海微系统与信息技术研究所 | 一种晶体管结构及其制备方法 |
CN113097124B (zh) * | 2021-04-02 | 2023-12-05 | 中国科学院上海微系统与信息技术研究所 | 异质集成GaN薄膜及GaN器件的制备方法 |
CN113394306B (zh) * | 2021-05-18 | 2022-09-27 | 浙江大学 | 一种基于石墨烯的可重复使用ZnO单晶衬底及制备ZnO薄膜的方法 |
CN113594003B (zh) * | 2021-07-20 | 2023-07-21 | 北方夜视技术股份有限公司 | 复合石英窗的Cs2Te日盲紫外光电阴极及其制备方法 |
CN113816334A (zh) * | 2021-08-10 | 2021-12-21 | 广西师范大学 | 一种基于硝化石墨烯的氨气传感器及其制备方法 |
CN113969423A (zh) * | 2021-10-26 | 2022-01-25 | 西安电子科技大学 | 可转移的大尺寸氧化镓薄膜的制备方法 |
CN115579280B (zh) * | 2021-11-19 | 2023-05-16 | 北京大学 | 一种利用多层二维晶体掩膜制备氮化镓单晶衬底的方法 |
CN115160610B (zh) * | 2022-06-28 | 2024-03-19 | 之江实验室 | 一种自支撑的取向P(VDF-TrFE)薄膜及其制备方法 |
CN115863399A (zh) * | 2023-02-24 | 2023-03-28 | 成都功成半导体有限公司 | 一种在金刚石衬底上键合GaN层的方法及其器件 |
CN117005032B (zh) * | 2023-10-07 | 2024-01-26 | 深圳市鲁光电子科技有限公司 | 一种半导体材料的生长方法 |
Citations (3)
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CN104465922A (zh) * | 2014-12-10 | 2015-03-25 | 太原理工大学 | 一种低成本氮化镓基发光二极管制备方法 |
CN105633225A (zh) * | 2016-03-08 | 2016-06-01 | 西安电子科技大学 | 基于石墨烯与磁控溅射氮化铝的氮化镓生长方法 |
CN105655238A (zh) * | 2016-03-08 | 2016-06-08 | 西安电子科技大学 | 基于石墨烯与磁控溅射氮化铝的硅基氮化镓生长方法 |
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US9024310B2 (en) * | 2011-01-12 | 2015-05-05 | Tsinghua University | Epitaxial structure |
US8987780B2 (en) * | 2013-05-31 | 2015-03-24 | Stmicroelectronics, Inc. | Graphene capped HEMT device |
US10504722B2 (en) * | 2017-07-25 | 2019-12-10 | United States Of America As Represented By The Secretary Of The Air Force | Growth of III-nitride semiconductors on thin van der Waals buffers for mechanical lift off and transfer |
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- 2019-06-21 CN CN201910544984.2A patent/CN110265356B/zh active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104465922A (zh) * | 2014-12-10 | 2015-03-25 | 太原理工大学 | 一种低成本氮化镓基发光二极管制备方法 |
CN105633225A (zh) * | 2016-03-08 | 2016-06-01 | 西安电子科技大学 | 基于石墨烯与磁控溅射氮化铝的氮化镓生长方法 |
CN105655238A (zh) * | 2016-03-08 | 2016-06-08 | 西安电子科技大学 | 基于石墨烯与磁控溅射氮化铝的硅基氮化镓生长方法 |
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US20200402796A1 (en) | 2020-12-24 |
US11133185B2 (en) | 2021-09-28 |
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