CN111584627A - 一种近似同质外延hemt器件结构及其制备方法 - Google Patents
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 40
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Abstract
本发明公开了一种近似同质外延HEMT器件结构,属于微电子技术领域,包括从下至上依次排布的衬底、低温成核层、石墨烯层一、缓冲层一、恢复层、石墨烯层二、缓冲层二、高阻层、沟道层以及势垒层,本发明可以大幅度降低材料的位错密度,提高晶格质量,从而提升HEMT器件的电子迁移率、击穿电压以及漏电流等特性,适用于高压大功率电子器件应用,通过插入石墨烯层易于剥离,可以有效的缓解蓝宝石于氮化镓层的热失配以及可以提高蓝宝石衬底和氮化镓薄膜衬底的利用率,有效降低成本。
Description
技术领域
本发明属于微电子技术领域,涉及半导体器件的外延制备,一种近似同质外延HEMT器件结构及其制备方法,制备的器件主要用于高压大功率应用场合。
背景技术
第三代半导体材料即宽禁带(Wide Band Gap Semiconductor,简称WBGS)半导体材料是继第一代硅、锗和第二代砷化镓、磷化铟等以后发展起来。在第三代半导体材料中,氮化镓(GaN)具有宽带隙、直接带隙、高击穿电场、较低的介电常数、高电子饱和漂移速度、抗辐射能力强和良好的化学稳定性等优越性质,成为继锗、硅、砷化镓之后制造新一代微电子器件和电路的关键半导体材料。特别是高温、大功率、高频和抗辐照电子器件以及全波长、短波长光电器件方面具有得天独厚的优势,是实现高温与大功率、高频及抗辐射、全波长光电器件的理想材料,是微电子、电力电子、光电子等高新技术以及国防工业、信息产业、机电产业和能源产业等支柱产业进入21世纪后赖以继续发展的关键基础材料。
但由于氮化镓HEMT器件与异质衬底之间均存在较大的晶格失配,即使有成核层与AlGaN或GaN缓冲层在衬底与GaN层之间起到缓冲作用,最终生长得到的GaN层的晶体质量也不够好,进而影响HEMT的质量,这样就会降低器件击穿电压,减小电子迁移率,从而使当前氮化镓HEMT器件的性能远低于理论极限。
发明内容
本发明的目的在于克服目前氮化镓HEMT器件晶格质量较差的问题,提供了一种HEMT外延结构及其制备方法,能够提高HEMT器件的质量。
一种近似同质外延HEMT器件结构,包括从下至上依次排布的衬底、低温成核层、石墨烯层一、缓冲层一、恢复层、石墨烯层二、缓冲层二、高阻层、沟道层、势垒层。
优选的,所述衬底尺寸大小为2-8inch,材质为蓝宝石。
优选的,所述低温成核层是ALN、ALGaN、GaN其中任意一种或组合,生长温度400-700℃,薄膜厚度10-50nm。
优选的,所述石墨烯层一以及石墨烯层二的薄膜厚度均为0.3nm-2nm。二者便于剥离,且石墨烯具有高导电性,存于外延层中不会有其他影响。
优选的,所述缓冲层一、缓冲层二均是采用金属有机气相外延沉积非故意掺杂的氮化镓层,生长温度为900~1120℃,薄膜厚度在0.5~2um。
优选的,所述恢复层是采用金属有机气相外延沉积非故意掺杂生长形成的高质量的氮化镓薄膜层,较正常偏厚,薄膜厚度范围为5um-50um,其生长温度为1120~1150℃。
优选的,所述高阻层是采用金属有机气相外延沉积非故意掺杂生长形成的半绝缘高质量的氮化镓薄膜层,薄膜厚度范围为1um-5um。
优选的,所述沟道层采用金属有机气相外延沉积非故意掺杂生长形成的半绝缘高质量的氮化镓沟道薄膜层,薄膜厚度范围为50-200nm。
优选的,所述势垒层具体为铝镓氮势垒层,其结构式为AlxGa1-xN,其中0<x<1,厚度为5-35nm。
本发明的制备方法可选择将外延层长到恢复层后移出腔体,在石墨烯层一进行剥离,剥离出的缓冲层加恢复层为纯氮化镓薄膜继续作为衬底放回腔体生长后续层,同质外延生长完整的HEMT结构。剥离后的蓝宝石衬底可重复使用。
进一步地,本发明的制备方法也可以选择一次性将整个外延层长完,但剥离后再生长对减少缺陷更优。外延层生长完成后可根据芯片工艺需求可选择继续在石墨烯二处进行剥离,剥离出完整的HEMT的结构。剥离后的氮化镓薄膜衬底可重复使用
与现有技术相比,本发明的结构及其制备方法具有如下优点:可以大幅度降低材料的位错密度,提高晶格质量,从而提升HEMT器件的电子迁移率、击穿电压以及漏电流等特性,适用于高压大功率电子器件应用,通过插入石墨烯层易于剥离,可以有效的缓解蓝宝石于氮化镓层的热失配以及可以提高蓝宝石衬底和氮化镓薄膜衬底的利用率,有效降低成本。
附图说明
图1为本发明实施例提供的一种HEMT外延结构的结构示意图;
图2为本发明的方法制备的氮化镓器件外延层的X射线衍射测试结果图。
其中:衬底L1、低温成核层L2、石墨烯层一L3、缓冲层一L4、恢复层L5、石墨烯层二L6、缓冲层二L7、高阻层L8、沟道层L9、势垒层L10。
具体实施方式
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,下面结合具体实施方式,进一步阐述本发明。
本发明的一种近似同质外延HEMT器件结构,包括从下至上依次排布的衬底L1、低温成核层L2、石墨烯层一L3、缓冲层一L4、恢复层L5、石墨烯层二L6、缓冲层二L7、高阻层L8、沟道层L9、势垒层L10,具体采用以下方法制得:
实施例1
(1)提供衬底L1,其衬底为蓝宝石衬底,尺寸范围为2-8inch;
(2)在温度400-700℃之间生长成核层L2,可以是ALN、ALGaN、GAN其中任意一种或组合生长,其总厚度在10-50nm;
(3)在成核层上生长石墨烯层一L3,其总厚度在0.3nm~2nm之间;
(4)在石墨烯层上生长缓冲层一L4,其生长温度在900~1120,薄膜厚度在0.5~2um;
(5)在缓冲层一L4上生长恢复层L5,薄膜厚度范围为5um-50um,其生长温度在1120~1150之间;
(6)在恢复层L5上面继续生长石墨烯层二L6,其总厚度在0.3nm~2nm之间;
(7)在石墨烯层二L6上面接缓冲层二L7,其生长温度在900~1120,薄膜厚度在0.5~2um;
(8)在缓冲层二L7上面生长高阻层L8,薄膜厚度范围为1um-5um;
(9)在高阻层L8上面继续生长氮化镓沟道层L9,薄膜厚度范围为50-200nm;
(10)在沟道层L9上生长铝镓氮势垒层L10,势垒层L10的结构式为AlxGa1-xN,其中0<x<1,厚度为5-35nm。
实施例2
(1)提供衬底L1,其衬底为蓝宝石衬底,尺寸范围为2-8inch;
(2)在温度400-700℃之间生长成核层L2,可以是ALN、ALGaN、GAN其中任意一种或组合生长,其总厚度在10-50nm;
(3)在成核层上生长石墨烯层一L3,其总厚度在0.3nm~2nm之间;
(4)在石墨烯层上生长缓冲层一L4,其生长温度在900~1120,薄膜厚度在0.5~2um;
(5)在缓冲层一L4上生长恢复层L5,薄膜厚度范围为5um-50um,其生长温度在1120~1150之间;
(6)降温取出外延片,将蓝宝石衬底与氮化镓层(缓冲层一L4+恢复层L5)进行剥离;再将氮化镓薄膜衬底放回腔体;
(7)在氮化镓薄膜衬底上面继续生长石墨烯层二L6,其总厚度在0.3nm~2nm之间;
(8)在石墨烯2上面接缓冲层二L7,其生长温度在900~1120,薄膜厚度在0.5~2um;
(9)在缓冲层二L7上面生长高阻层L8,薄膜厚度范围为1um-5um;
(10)在高阻层L8上面继续生长氮化镓沟道层L9,薄膜厚度范围为50-200nm;
(11)在沟道层L9上生长铝镓氮势垒层L10,势垒层L10的结构式为AlxGa1-xN,其中0<x<1,厚度为5-35nm。
实施例3
(1)提供衬底L1,其衬底为蓝宝石衬底,尺寸范围为2-8inch;
(2)在温度400-700℃之间生长成核层L2,可以是ALN、ALGaN、GAN其中任意一种或组合生长,其总厚度在10-50nm;
(3)在成核层上生长石墨烯层一L3,其总厚度在0.3nm~2nm之间;
(4)在石墨烯层上生长缓冲层一L4,其生长温度在900~1120,薄膜厚度在0.5~2um;
(5)在缓冲层一L4上生长恢复层L5,薄膜厚度范围为5um-50um,其生长温度在1120~1150之间;
(6)降温取出外延片,将蓝宝石衬底与氮化镓层(缓冲层一L4+恢复层L5)进行剥离;再将氮化镓薄膜衬底放回腔体;
(7)在氮化镓薄膜衬底上面继续生长石墨烯层二L6,其总厚度在0.3nm~2nm之间;
(8)在石墨烯2上面接缓冲层二L7,其生长温度在900~1120,薄膜厚度在0.5~2um;
(9)在缓冲层二L7上面生长高阻层L8,薄膜厚度范围为1um-5um;
(10)在高阻层L8上面继续生长氮化镓沟道层L9,薄膜厚度范围为50-200nm;
(11)在沟道层上生长铝镓氮势垒层L10,势垒层L10的结构式为AlxGa1-xN,其中0<x<1,厚度为5-35nm;
(12)降温再次取出外延片后,将氮化镓薄膜层(缓冲层一L4+恢复层L5)于HEMT完整结构再次进行剥离。HEMT结构可继续往下芯片制程,剥离下的氮化镓薄膜衬底可再次放回腔体循环利用。
图2出示了用实施案例2制备的氮化镓器件外延层与常规氮化镓器件外延层的X射线衍射(XRD)测试结果对比图,在相同的测试条件下数据对比,测试数据显示,在实施案例1下制备的的氮化镓器件外延层(002)面衍射峰的半高宽较常规氮化镓器件外延层的(002)面半高宽小25%左右,外延层晶格质量明显得到改善。
由技术常识可知,本发明可以通过其它的不脱离其精神实质或必要特征的实施方案来实现。因此,上述公开的实施方案,就各方面而言,都只是举例说明,并不是仅有的。所有在本发明范围内或在等同于本发明的范围内的改变均被本发明包含。
Claims (9)
1.一种近似同质外延HEMT器件结构,其特征在于,包括从下至上依次排布的衬底(L1)、低温成核层(L2)、石墨烯层一(L3)、缓冲层一(L4)、恢复层(L5)、石墨烯层二(L6)、缓冲层二(L7)、高阻层(L8)、沟道层(L9)、势垒层(L10)。
2.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述衬底(L1)尺寸大小为2-8inch,材质为蓝宝石。
3.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述低温成核层(L2)是ALN、ALGaN、GaN其中任意一种或组合,生长温度400-700℃,薄膜厚度10-50nm。
4.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述石墨烯层一(L3)以及石墨烯层二(L6)的薄膜厚度均为0.3nm-2nm。
5.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述缓冲层一(L4)、缓冲层二(L7)均是采用金属有机气相外延沉积非故意掺杂的氮化镓层,生长温度为900~1120℃,薄膜厚度在0.5~2um。
6.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述恢复层(L5)是采用金属有机气相外延沉积非故意掺杂生长形成的高质量的氮化镓薄膜层,薄膜厚度范围为5um-50um,其生长温度为1120~1150℃。
7.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述高阻层(L8)是采用金属有机气相外延沉积非故意掺杂生长形成的半绝缘高质量的氮化镓薄膜层,薄膜厚度范围为1um-5um。
8.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述沟道层(L9)采用金属有机气相外延沉积非故意掺杂生长形成的半绝缘高质量的氮化镓沟道薄膜层,薄膜厚度范围为50-200nm。
9.根据权利要求1所述的一种近似同质外延HEMT器件结构,其特征在于,所述势垒层(L10)的结构式为AlxGa1-xN,其中0<x<1,厚度为5-35nm。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112713190A (zh) * | 2020-12-29 | 2021-04-27 | 西安电子科技大学芜湖研究院 | 一种垂直结构氮化镓hemt器件的制备方法 |
CN115863399A (zh) * | 2023-02-24 | 2023-03-28 | 成都功成半导体有限公司 | 一种在金刚石衬底上键合GaN层的方法及其器件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101931035A (zh) * | 2009-06-23 | 2010-12-29 | 日本冲信息株式会社 | 氮化物半导体层分离方法、半导体器件和晶片及制造方法 |
CN108899401A (zh) * | 2018-06-28 | 2018-11-27 | 西安电子科技大学 | 基于石墨烯插入层结构的GaN基LED器件制备方法 |
US20190035624A1 (en) * | 2017-07-25 | 2019-01-31 | Government Of The United States, As Represented By The Secretary Of The Air Force | Growth of iii-nitride semiconductors on thin van der waals buffers for mechanical lift off and transfer |
CN110050335A (zh) * | 2016-11-08 | 2019-07-23 | 麻省理工学院 | 用于层转移的位错过滤系统和方法 |
CN110265356A (zh) * | 2019-06-21 | 2019-09-20 | 西安电子科技大学 | 基于石墨烯的氮化镓外延层剥离方法 |
-
2020
- 2020-05-28 CN CN202010465630.1A patent/CN111584627A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101931035A (zh) * | 2009-06-23 | 2010-12-29 | 日本冲信息株式会社 | 氮化物半导体层分离方法、半导体器件和晶片及制造方法 |
CN110050335A (zh) * | 2016-11-08 | 2019-07-23 | 麻省理工学院 | 用于层转移的位错过滤系统和方法 |
US20190035624A1 (en) * | 2017-07-25 | 2019-01-31 | Government Of The United States, As Represented By The Secretary Of The Air Force | Growth of iii-nitride semiconductors on thin van der waals buffers for mechanical lift off and transfer |
CN108899401A (zh) * | 2018-06-28 | 2018-11-27 | 西安电子科技大学 | 基于石墨烯插入层结构的GaN基LED器件制备方法 |
CN110265356A (zh) * | 2019-06-21 | 2019-09-20 | 西安电子科技大学 | 基于石墨烯的氮化镓外延层剥离方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112713190A (zh) * | 2020-12-29 | 2021-04-27 | 西安电子科技大学芜湖研究院 | 一种垂直结构氮化镓hemt器件的制备方法 |
CN112713190B (zh) * | 2020-12-29 | 2022-05-03 | 西安电子科技大学芜湖研究院 | 一种垂直结构氮化镓hemt器件的制备方法 |
CN115863399A (zh) * | 2023-02-24 | 2023-03-28 | 成都功成半导体有限公司 | 一种在金刚石衬底上键合GaN层的方法及其器件 |
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