CN110223933A - 基板处理装置及基板处理系统 - Google Patents
基板处理装置及基板处理系统 Download PDFInfo
- Publication number
- CN110223933A CN110223933A CN201910074196.1A CN201910074196A CN110223933A CN 110223933 A CN110223933 A CN 110223933A CN 201910074196 A CN201910074196 A CN 201910074196A CN 110223933 A CN110223933 A CN 110223933A
- Authority
- CN
- China
- Prior art keywords
- plate
- substrate
- heat treatment
- pillars
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 238000012545 processing Methods 0.000 title claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 99
- 230000007246 mechanism Effects 0.000 claims abstract description 75
- 238000001816 cooling Methods 0.000 claims abstract description 62
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 6
- 239000003507 refrigerant Substances 0.000 claims description 18
- 238000003475 lamination Methods 0.000 claims description 10
- 230000003028 elevating effect Effects 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000009434 installation Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
本发明涉及一种基板处理装置及基板处理系统。基板处理装置对基板进行热处理,所述装置包含以下的要素。对基板进行加热的热处理板、用来传送基板的升降销、使所述升降销升降的升降销驱动机构、形成热处理环境的壳体、抑制所述热处理板的热向下方传递的冷却基底板,所述升降销驱动机构配置在所述冷却基底板的下方。
Description
技术领域
本发明涉及一种对半导体晶片、液晶显示器用基板、等离子显示器用基板、有机EL(Electroluminescence,电致发光)用基板、FED(Field Emission Display,场致发射显示器)用基板、光显示器用基板、磁盘用基板、磁光盘用基板、光掩模用基板、太阳电池用基板等各种基板(以下简称为基板)进行热处理的基板处理装置及基板处理系统。
背景技术
以往,存在具备如下的装置作为此种装置:热处理板,对所载置的基板进行加热;升降销,为了传送基板而设置在热处理板;覆盖部件,包围热处理板的上部,构成为能够相对于热处理板升降,并形成基于热处理板的热处理环境;壳体,包围热处理板与覆盖部件;顶板,设置在覆盖部件的顶面与热处理板的上表面之间;以及位置调整部件,调整顶板的下表面与热处理板的上表面的间隔(例如,参照日本专利特开2000-3843号公报)。
在以如上方式构成的基板处理装置中,覆盖部件、使升降销升降的驱动机构及控制它们的控制设备配置在作为壳体外部的侧面。
然而,在具有此种构成的以往例的情况下存在如下那样的问题。
也就是当以往的装置在壳体内配置气缸或电动机等驱动机构时,存在因热处理板的热影响而导致产生故障的顾虑,因此难以将驱动机构配置在壳体内。因此,存在装置的覆盖区增大的问题。
特别是最近,为了进行微细加工处理,有时会形成被称为涂布碳膜的下层膜。为了生成该下层膜,与此前的100~150℃左右的热处理相比,在300~500℃左右的高温下进行热处理。如果变成此种高温,那么驱动机构因热影响而导致产生故障的顾虑就会变得极大,因此也存在逐渐难以配置在壳体内的情况。
另一方面,为了抑制热处理板的热影响并且减小覆盖区,在将驱动机构配置在壳体内时,必须配置在从热处理板向下方大幅远离的部位。因此,将驱动机构配置在壳体内来缩小覆盖区因装置的高度变得过高而不现实。
发明内容
本发明是鉴于此种情况而完成的,目的在于提供一种通过热分离抑制高度并且能够缩小覆盖区的基板处理装置及基板处理系统。
本发明为了达成此种目的而采用如下那样的构成。
另外,本发明是对基板进行热处理的基板处理装置,所述装置包含以下的要素:热处理板,载置基板,并对基板进行加热;升降销,用来传送基板;升降销驱动机构,使所述升降销相对于所述热处理板的上表面升降;壳体,覆盖所述热处理板的周围,形成基于热处理板的热处理环境;及冷却基底板,将所述热处理板配置在上部,抑制所述热处理板的热向下方传递;所述升降销驱动机构配置在所述冷却基底板的下方。
根据本发明,因为是通过冷却基底板进行热分离,所以热处理板的热从热处理板向下方传递得到抑制。因此,能够抑制热处理板的热向配置在冷却基底板的下方的升降销驱动机构传递。其结果为,能够不从热处理板向下方大幅远离而将升降销驱动机构配置在壳体内,所以能够抑制高度,并且能够抑制装置的覆盖区。
另外,在本发明中,所述壳体具备供基板搬入搬出的搬入搬出口,并且还具备使所述搬入搬出口开闭的快门主体、及驱动所述快门主体的快门主体驱动机构,所述快门主体驱动机构配置在所述冷却基底板的下方。所述升降销驱动机构优选以与所述冷却基底板之间进行热传递的状态安装在所述冷却基底板的下表面。
能够抑制热处理板的热向配置在冷却基底板的下方的快门主体驱动机构传递。其结果为,能够不从热处理板向下方大幅远离而将快门主体驱动机构配置在壳体内,所以能够抑制高度,并且能够抑制装置的覆盖区。
另外,在本发明中,所述升降销驱动机构优选以与所述冷却基底板之间进行热传递的状态安装在所述冷却基底板的下表面。
将升降销驱动机构直接或者以隔着热传递部件能够进行热传递的状态安装在冷却基底板的下表面。因此,由于是通过冷却基底板进行冷却,所以能够抑制升降销驱动机构因热处理板而升温。另外,在隔着热传递部件的情况下,能够采用针对冷却基底板的各种安装方法,从而能够提高安装的自由度。
另外,在本发明中,所述快门主体驱动机构优选以与所述冷却基底板之间进行热传递的状态安装在所述冷却基底板的下表面。
将快门主体驱动机构直接或者以隔着热传递部件能够进行热传递的状态安装在冷却基底板的下表面。因此,由于是通过冷却基底板进行冷却,所以能够抑制快门主体驱动机构因热处理板而升温。另外,在隔着热传递部件的情况下,能够采用针对冷却基底板的各种安装方法,从而能够提高安装的自由度。
另外,在本发明中,所述冷却基底板优选供冷媒流通的冷媒流路遍及整体而形成。
通过制成使冷媒沿冷媒流路积极地流通来进行冷却的冷却基底板,能够有效率地吸收来自热处理板的热。因此,能够抑制热处理板的热向冷却基底板的下方传递。
另外,在本发明中,优选还具备配置在所述热处理板的下表面与所述冷却基底板的上表面之间的多根支柱,所述热处理板通过所述多根支柱安装在所述冷却基底板。
通过多根支柱,以热处理板的下表面远离冷却基底板的状态安装热处理板。因此,能够只由支柱进行来自热处理板的通过热传递而进行的导热。其结果为,能够抑制因热传递而导致冷却基底板升温,从而能够增大通过冷却基底板而进行的热分离的程度。
另外,本发明在将基板处理装置积层配置成多段而构成的基板处理系统中,所述各基板处理装置在其上部具备抑制热向上方传递的热分离板。
在将基板处理装置积层配置成多段而成的基板处理系统中,在基板处理装置的壳体内能够抑制热处理板的热向下方传递。然而,因为热处理板的热会向上方传递,所以存在上方的基板处理装置中的升降销驱动机构受到不良影响的顾虑。因此,通过在各基板处理装置的上部配置热分离板,能够抑制这种不良影响。
附图说明
※为了对发明进行说明而图示出被认为是目前最佳的若干方式,但希望理解发明并不限定于图示那样的构成及策略。
图1是表示实施例的基板处理装置的整体构成的概略构成图,
图2是可动顶板的俯视图,
图3是表示升降销的前端部附近的纵剖视图,
图4是表示将基板搬入搬出的状态的纵剖视图,
图5是表示对基板进行加热的状态的纵剖视图,
图6是表示升降机构与驱动机构的安装方法的另一例的纵剖视图,
图7是将两台基板处理装置积层配置而构成的基板处理系统的概略构成图。
具体实施方式
以下,参照附图对本发明的一实施例进行说明。
图1是表示实施例的基板处理装置的整体构成的概略构成图,图2是可动顶板的俯视图,图3是表示升降销的前端部附近的纵剖视图。
实施例的基板处理装置1对基板W实施热处理。具体来说,进行为了进行微细加工处理而形成例如被称为涂布碳膜的下层膜时的热处理。为了生成该下层膜,在300~500℃左右的高温下进行热处理。
基板处理装置1具备下部基底板3、水冷式基底板5、热处理板7、可动顶板单元9、升降销单元11、壳体13、及快门单元15。
该基板处理装置1从相邻配置的搬送臂17搬入基板W并实施热处理后,通过搬送臂17将已处理的基板W搬出。
下部基底板3在上表面竖立设置着支柱19,且在支柱19的上部配置着水冷式基底板5。水冷式基底板5抑制热处理板7的热向下方传递。具体来说,水冷式基底板5例如在内部能够供冷媒流通的冷媒流路21遍及整个面而形成。例如作为冷媒的冷却水在该冷媒流路21中流通。该冷却水例如被调温成20℃。
此外,所述水冷式基底板5相当于本发明的“冷却基底板”。
热处理板7在俯视下呈圆形状。其直径略大于基板W的直径。热处理板7内置着未图示的加热器等加热机构,例如是以表面温度成为400℃的方式进行加热。热处理板7是通过设置在其下表面与水冷式基底板5的上表面之间的4根支柱23,以从水冷式基底板5向上方远离的状态配置。热处理板7在俯视下与正三角形的各顶点对应的位置形成着贯通口25(因图示关系而只示出2个部位)。
在热处理板7附设着可动顶板单元9。可动顶板单元9具备升降基底板27、升降机构29、控制设备30、支柱31、及可动顶板33。
升降基底板27具备避开与支柱23及下述升降销41的干涉的开口。升降机构29例如包含气缸。升降机构29是在以使具有作动轴的部分朝向上方的姿势与水冷式基底板5密接并进行热传递的状态下直接安装。该升降机构29能够将作动轴的前端部的高度固定在任意的位置。关于升降机构29,其作动轴连结在升降基底板27的底面。在位于升降机构29的下方的下部基底板3的上表面配置着具备空气阀及电磁阀等的控制设备30。控制设备30通过给予升降机构29的空气的切换等而直接进行操作。当通过控制设备30使升降机构29的作动轴升降时,能够使升降基底板27的高度位置可变。升降基底板27在其上表面例如竖立设置着4根支柱31。在4根支柱31的上端安装着可动顶板33。
如图2所示,可动顶板33俯视下在中央部形成着开口35。开口35俯视下形成为小于基板W的直径。该可动顶板33通过升降机构29作动而与升降基底板27一起升降。可动顶板33的升降位置遍及对基板W进行热处理时的下降位置与搬入基板W时的上升位置而移动。此外,下降位置优选距基板W的上表面与可动顶板33的下表面的距离约为10mm。其原因在于通过发明者等的实验得知,为了提高基板W的表面中的温度分布的面内均匀性,优选该距离。
可动顶板33呈其对角线长度形成为长于热处理板7的直径的矩形状。4根支柱31各自的上端连结在可动顶板33的下表面中的四角。可动顶板33的四角位于远离作为热源的俯视下圆形状的热处理板7的位置。因此,即便可动顶板33因热处理板7的辐射热而被加热,也能够使热不易传递至支柱31。因此,升降机构29不易受到热影响,从而能够抑制产生故障。
所述可动顶板33优选包含陶瓷或金属与陶瓷的合金。由此,即便进行高温热处理,也能够防止因热而导致变形。
升降销单元11具备驱动机构37、控制设备38、升降环39、及3根升降销41。此外,升降销41因图示关系而只绘出2根。
驱动机构37例如包含气缸。驱动机构37是以将其具有作动轴的部分朝向下方,并使相反侧与水冷式基底板5的下表面密接来进行热传递的状态直接安装。作动轴的下部连结着升降环39。在升降环39的上表面竖立设置着3根升降销41。驱动机构37由具备空气阀及电磁阀等的控制设备38直接操作。驱动机构37通过控制设备38,能够遍及3根升降销41从热处理板7的上表面向上方突出的传送位置(图1中的两点链线)与3根升降销41从热处理板7的上表面没入下方的处理位置(图1中的实线)这两个部位对其作动轴的高度位置进行调节。3根升降销41插通形成在热处理板7的3个部位的贯通口25。
此外,所述驱动机构37及控制设备38相当于本发明中的“升降销驱动机构”。
升降销41优选如图3所示那样构成。升降销41具备芯部41a、外筒41b、及石英球41c。芯部41a的相当于主体部41d的上部的前端部41e形成为直径小于主体部41d。外筒41b形成为前端部以外略大于石英球41c的外径的内径。外筒41b的前端部形成为小于石英球41c的直径的内径。石英球41c形成为其直径略小于前端部41e。因此,当在将石英球41c载置在前端部41e的上表面的状态下覆盖外筒41b时,成为石英球41c的高达1/3从外筒41b突出的状态。在该状态下将卡止销41g压入贯通芯部41d与外筒41b的贯通口41f,由此将外筒41b与石英球41c一起固定在芯部41a而构成升降销41。此外,石英球41c以外的部件为金属制。
石英适合作为能够耐受高温环境的材料,但是如果考虑到强度及成本,那么难以将升降销41的整体制成石英制。因此,如上所述那样只将前端部的石英球41c制成石英制,由此能够抑制成本。另外,由于石英的高度略低于作为基板W的材料的单晶硅,所以损伤基板W的下表面的顾虑较低,并且由于为球状,所以能够将接触面积设为最小限。
壳体13覆盖热处理板7的上方,形成基于热处理板7的热处理环境。壳体13在其一面形成着搬入搬出口43。搬入搬出口43从热处理板7的上表面附近的高度位置向上方开口。搬送臂17通过该搬入搬出口43进行基板W的搬入搬出。
在搬入搬出口43附设着快门单元15。快门单元15具备驱动机构45、控制设备46、及快门主体47。驱动机构45是在以其作动轴的部分朝向上方的姿势一部分与水冷式基底板5密接并进行热传递的状态下直接安装。作动轴的上部连结着快门主体47。驱动机构45是由具备空气阀及电磁阀等的控制设备46直接操作。当驱动机构45通过控制设备46使作动轴伸长时,快门主体47上升而搬入搬出口43关闭(图1所示的实线),当驱动机构45使作动轴收缩时,快门主体47下降而搬入搬出口43打开(图1所示的两点链线)。
此外,所述驱动机构45及控制设备46相当于本发明中的“快门主体驱动机构”。
壳体13在其顶面形成着排气口49。排气口49与排气管51连通连接。壳体13的排气口49与热处理板7的上表面的间隔例如为30mm左右。排气管51与未图示的排气设备连通连接。在排气管51的一部分配置着压力传感器53。该压力传感器53检测排气管51内的排气压力。
壳体13沿着排气管51的上表面设置着封装加热器55。该封装加热器55对壳体13及排气管51进行加热,防止当包含升华物的气体与壳体13接触时气体被冷却而升华物附着在壳体13的内壁。
控制部61包含未图示的CPU(Central Processing Unit,中央处理单元)及存储器。控制部61进行热处理板7的温度控制、通过操作控制设备30而进行的可动顶板单元9的升降控制、通过操作控制设备38而进行的升降销单元11的驱动控制、通过操作控制设备46而进行的快门单元15的开闭控制、封装加热器55的温度控制、基于压力传感器53的排气控制及维护指示等。另外,控制部61能够对应于基板W对可动顶板单元9的升降控制中的下降位置进行各种操作。例如,在规定了各基板W的处理条件及顺序的程序中预先规定可动顶板33的下降位置,对未图示的指示部进行操作,将相当于可动顶板33距基板W的表面的距离的参数预先指示给程序。控制部61例如在对基板W进行处理时,参照由装置操作员指示的与基板W对应的程序,并对应于其参数对升降机构29进行操作。由此,能够针对各基板W调整可动顶板33的下降位置。
接着,参照图4及图5对通过所述构成的基板处理装置而进行的基板W的处理进行说明。此外,图4是表示将基板搬入搬出的状态的纵剖视图,图5是表示对基板进行加热的状态的纵剖视图。
首先,如图4所示,控制部61对可动顶板单元9进行操作,使可动顶板33移动至上升位置。进而,控制部61对升降销单元11进行操作,使3根升降销41上升至传送位置。控制部61进行这些操作,并且对快门单元15进行操作,使搬入搬出口43打开。
接下来,控制部61使搬送臂17在设为高于传送位置且低于上升位置的可动顶板的下表面的位置的状态下从搬入搬出口43进入,且在热处理板7的上方使搬送臂17下降。由此,基板W被传送至位于传送位置的升降销41。接下来,使搬送臂17从搬入搬出口43退出,并且对快门单元15进行操作而使搬入搬出口43关闭。
接下来,如图5所示,控制部61对升降销单元11进行操作,使3根升降销41下降至处理位置。由此,对基板W进行400℃下的加热处理。控制部61参照程序,历时所规定的加热时间进行加热处理。
控制部61当经过指定加热时间时,对可动顶板单元9及升降销单元11进行操作,使可动顶板33上升至上升位置,并且使升降销41上升至传送位置。接下来,控制部61对快门单元15进行操作,使搬入搬出口43打开。进而,控制部61使搬送臂17从比传送位置靠下方且比热处理板7的上表面靠上方的高度进入搬入搬出口43。接下来,使搬送臂17上升至比传送位置高且比可动顶板33的下表面低的位置,由此搬送臂17从升降销41接收已处理的基板W。接下来,使搬送臂17从搬入搬出口43退出,由此将已处理的基板W搬出。
通过所述一系列动作完成对一片基板W的热处理,当对新的基板W进行处理时,控制部61例如能够参照由装置操作员指示的程序,将基于可动顶板单元9的可动顶板33的上升位置设为程序所指示的上升位置。
根据本实施例,因为是通过水冷式基底板5进行热分离,所以热处理板7的热从热处理板7向下方传递得到抑制。因此,能够抑制热处理板7的热向配置在水冷式基底板5的下方的升降机构29、驱动机构37、45及控制设备30、38、46传递。其结果为,能够不从热处理板7向下方大幅远离而将升降机构29、驱动机构37、45及控制设备30、38、46配置在壳体13内,所以能够抑制高度,并且能够抑制基板处理装置1的覆盖区。
进而,通过4根支柱23以热处理板7的下表面从水冷式基底板5远离的状态安装热处理板7。因此,能够只由4根支柱23进行来自热处理板7的通过热传递而进行的导热。其结果为,能够抑制水冷式基底板5因热传递而导致升温,因此,能够增大通过水冷式基底板5而进行的热分离的程度。
另外,升降机构29、驱动机构37及驱动机构45是以上表面的整体或一部分进行热传递的方式密接配置在水冷式基底板5,因此升降机构29、驱动机构37、及驱动机构45被冷却,从而能够防止因热影响而导致产生故障。因此,能够提高基板处理装置1的运转率。
<变化例>
可以像基板处理装置1A那样构成来代替所述基板处理装置1。此处,参照图6。此外,图6是表示升降机构与驱动机构的安装方法的另一例的纵剖视图。
该基板处理装置1A不同的是升降机构29及驱动机构37、45对水冷式基底板5的安装方法。
升降机构29及驱动机构37、45在它们的上表面与水冷式基底板5的下表面之间介存着安装板71。该安装板71包含具有导热性的材料(热传递部件)。具体来说,例如可列举不锈钢板、铝、铜等。
根据此种基板处理装置1A,作为升降机构29及驱动机构37、45对冷却基底板5的安装方法,能够采用各种形态,从而能够提高安装的自由度。
本发明并不限定于所述实施方式,能够如下所述那样变化实施。
(1)在所述实施例中具备可动顶板33,但本发明并非将可动顶板33设为必需构成。
(2)在所述实施例中,将可动顶板单元9的升降机构29、升降销单元11的驱动机构37、及快门单元15的驱动机构45密接安装在水冷式基底板5,或者隔着热传递部件安装在水冷式基底板5,但本发明并不限定于此种配置。例如,也可以从水冷式基底板5向下方远离而配置。即便为此种构成,也无须比以往进一步向下方大幅远离,从而装置的高度不会变得过高。
(3)在所述实施例中,以1个基板处理装置1、1A为例子进行了说明,但本发明也能够应用在将所述基板处理装置1、1A积层配置成多段而构成的基板处理系统。此处,参照图7。此外,图7是将两台基板处理装置积层配置而构成的基板处理系统的概略构成图。
该基板处理系统81是将两台所述基板处理装置1(1A)积层配置而构成。各基板处理装置1(1A)通过单元壳体83划分出配置着各基板处理装置1(1A)的两层空间。热分离板85例如在内部或者上下表面的一面附设着包含不锈钢板的配管87。配管87例如供冷却水等冷媒流通。热分离板85因为距热处理板7的距离远,所以与水冷式基底板5相比,冷却性能可以较弱。该热分离板85安装在配置着基板处理装置1(1A)的空间内的顶面。热分离板85抑制基板处理装置1(1A)的热处理板7所产生的热向上方传递。因此,能够抑制下部的基板处理装置1(1A)的热从下方向上部的基板处理装置1(1A)传递而导致上部的基板处理装置1(1A)的升降机构29、控制设备30、驱动机构37、45、控制设备38、46被加热。因此,能够抑制基板处理系统的覆盖区,并且能够抑制体积增大。另外,能够抑制基板处理系统81的单元壳体83的最上面被加热,因此能够缩窄与无尘室的顶面的间隙,从而能够提高基板处理系统的配置的自由度。
(4)在所述实施例中,采用水冷式基底板5作为冷却基底板,但本发明的冷却基底板并不限定于此种构成。例如,也可以为使水以外的冷媒沿冷媒流路流通的构成。另外,例如也可以采用具备以产生冷却作用的方式通电的珀尔帖元件的电子冷却式基底板。
(5)在所述实施例中,升降机构29、驱动机构37、45包含气缸,但本发明并不限定于此种构成。也就是作为升降机构29、驱动机构37、45,也能够采用电动机代替气缸。
※本发明能够在不脱离其思想或本质的情况下以其它具体的形式实施,因此,表示发明范围的内容不应参照以上的说明,而是应该参照附加的权利要求书。
Claims (20)
1.一种基板处理装置,其对基板进行热处理,所述装置包含以下的要素:
热处理板,载置基板,并对基板进行加热;
升降销,用来传送基板;
升降销驱动机构,使所述升降销相对于所述热处理板的上表面升降;
壳体,覆盖所述热处理板的周围,形成基于热处理板的热处理环境;以及
冷却基底板,将所述热处理板配置在上部,抑制所述热处理板的热向下方传递;
且
所述升降销驱动机构配置在所述冷却基底板的下方。
2.根据权利要求1所述的基板处理装置,其中所述壳体具备供基板搬入搬出的搬入搬出口,并且还具备:
快门主体,使所述搬入搬出口开闭;以及
快门主体驱动机构,驱动所述快门主体;且
所述快门主体驱动机构配置在所述冷却基底板的下方。
3.根据权利要求1所述的基板处理装置,其中所述升降销驱动机构是以与所述冷却基底板之间进行热传递的状态安装在所述冷却基底板的下表面。
4.根据权利要求2所述的基板处理装置,其中所述快门主体驱动机构是以与所述冷却基底板之间进行热传递的状态安装在所述冷却基底板的下表面。
5.根据权利要求1所述的基板处理装置,其中所述冷却基底板供冷媒流通的冷媒流路遍及整体而形成。
6.根据权利要求2所述的基板处理装置,其中所述冷却基底板供冷媒流通的冷媒流路遍及整体而形成。
7.根据权利要求3所述的基板处理装置,其中所述冷却基底板供冷媒流通的冷媒流路遍及整体而形成。
8.根据权利要求4所述的基板处理装置,其中所述冷却基底板供冷媒流通的冷媒流路遍及整体而形成。
9.根据权利要求1所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
10.根据权利要求2所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
11.根据权利要求3所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
12.根据权利要求4所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
13.根据权利要求5所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
14.根据权利要求6所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
15.根据权利要求7所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
16.根据权利要求8所述的基板处理装置,其还具备多根支柱,所述多根支柱配置在所述热处理板的下表面与所述冷却基底板的上表面之间,
所述热处理板通过所述多根支柱安装在所述冷却基底板。
17.一种基板处理系统,其是将根据权利要求1所述的基板处理装置积层配置成多段而构成,且
所述各基板处理装置在其上部具备抑制热向上方传递的热分离板。
18.一种基板处理系统,其是将根据权利要求2所述的基板处理装置积层配置成多段而构成,且
所述各基板处理装置在其上部具备抑制热向上方传递的热分离板。
19.一种基板处理系统,其是将根据权利要求3所述的基板处理装置积层配置成多段而构成,且
所述各基板处理装置在其上部具备抑制热向上方传递的热分离板。
20.一种基板处理系统,其是将根据权利要求4所述的基板处理装置积层配置成多段而构成,且
所述各基板处理装置在其上部具备抑制热向上方传递的热分离板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310851495.8A CN116845006A (zh) | 2018-03-02 | 2019-01-25 | 基板处理装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018037245A JP7116558B2 (ja) | 2018-03-02 | 2018-03-02 | 基板処理装置及び基板処理システム |
JP2018-037245 | 2018-03-02 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310851495.8A Division CN116845006A (zh) | 2018-03-02 | 2019-01-25 | 基板处理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110223933A true CN110223933A (zh) | 2019-09-10 |
CN110223933B CN110223933B (zh) | 2023-08-01 |
Family
ID=67768728
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310851495.8A Pending CN116845006A (zh) | 2018-03-02 | 2019-01-25 | 基板处理装置 |
CN201910074196.1A Active CN110223933B (zh) | 2018-03-02 | 2019-01-25 | 基板处理装置及基板处理系统 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310851495.8A Pending CN116845006A (zh) | 2018-03-02 | 2019-01-25 | 基板处理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11387121B2 (zh) |
JP (1) | JP7116558B2 (zh) |
KR (1) | KR102164765B1 (zh) |
CN (2) | CN116845006A (zh) |
TW (1) | TWI714955B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110233118A (zh) * | 2018-03-06 | 2019-09-13 | 株式会社斯库林集团 | 基板处理装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11710621B2 (en) | 2021-04-28 | 2023-07-25 | Applied Materials, Inc. | Direct lift cathode for lithography mask chamber |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05283500A (ja) * | 1991-09-20 | 1993-10-29 | Anelva Corp | マルチチャンバ型真空処理装置 |
JPH11204428A (ja) * | 1998-01-16 | 1999-07-30 | Tokyo Electron Ltd | 熱処理装置 |
JPH11312637A (ja) * | 1998-04-30 | 1999-11-09 | Dainippon Screen Mfg Co Ltd | 基板冷却装置および基板冷却方法 |
JP2000003843A (ja) * | 1998-06-12 | 2000-01-07 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP2000114343A (ja) * | 1998-10-08 | 2000-04-21 | Hitachi Ltd | 基板処理方法および基板搬送装置 |
CN1513107A (zh) * | 2001-06-06 | 2004-07-14 | Fsi���ʹ�˾ | 用于组合式加热和冷却设备的加热部件以及其加热方法 |
US20070090520A1 (en) * | 2005-10-25 | 2007-04-26 | Jin-Young Choi | Cooling plate, bake unit, and substrate treating apparatus |
US20080025823A1 (en) * | 2006-07-31 | 2008-01-31 | Masahiko Harumoto | Load lock device, and substrate processing apparatus and substrate processing system including the same |
JP2008034739A (ja) * | 2006-07-31 | 2008-02-14 | Dainippon Screen Mfg Co Ltd | ロードロック装置、それを備えた基板処理装置および基板処理システム |
US20090023297A1 (en) * | 2007-07-18 | 2009-01-22 | Sokudo Co., Ltd. | Method and apparatus for hmds treatment of substrate edges |
US20090156019A1 (en) * | 2007-06-29 | 2009-06-18 | Naoyuki Satoh | Substrate processing apparatus and method |
JP2013145916A (ja) * | 2013-04-08 | 2013-07-25 | Tokyo Electron Ltd | 熱処理装置、熱処理方法及び記憶媒体 |
JP3205145U (ja) * | 2015-07-27 | 2016-07-07 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板リフトピンアクチュエータ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5879128A (en) * | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
JP2005071992A (ja) | 2003-08-07 | 2005-03-17 | Canon Inc | 減圧雰囲気下における加熱、冷却方法及び画像表示装置の製造方法 |
JP5793468B2 (ja) | 2012-05-30 | 2015-10-14 | 東京エレクトロン株式会社 | 熱処理装置、熱処理板の冷却方法、プログラム及びコンピュータ記憶媒体 |
KR101706270B1 (ko) | 2014-10-24 | 2017-02-13 | 전홍희 | 기판 처리 장치 |
JP6792368B2 (ja) | 2016-07-25 | 2020-11-25 | 株式会社Screenホールディングス | 熱処理装置、基板処理装置および熱処理方法 |
-
2018
- 2018-03-02 JP JP2018037245A patent/JP7116558B2/ja active Active
-
2019
- 2019-01-25 CN CN202310851495.8A patent/CN116845006A/zh active Pending
- 2019-01-25 CN CN201910074196.1A patent/CN110223933B/zh active Active
- 2019-01-25 US US16/257,206 patent/US11387121B2/en active Active
- 2019-01-28 TW TW108103037A patent/TWI714955B/zh active
- 2019-01-29 KR KR1020190011207A patent/KR102164765B1/ko active IP Right Grant
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05283500A (ja) * | 1991-09-20 | 1993-10-29 | Anelva Corp | マルチチャンバ型真空処理装置 |
JPH11204428A (ja) * | 1998-01-16 | 1999-07-30 | Tokyo Electron Ltd | 熱処理装置 |
JPH11312637A (ja) * | 1998-04-30 | 1999-11-09 | Dainippon Screen Mfg Co Ltd | 基板冷却装置および基板冷却方法 |
JP2000003843A (ja) * | 1998-06-12 | 2000-01-07 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP2000114343A (ja) * | 1998-10-08 | 2000-04-21 | Hitachi Ltd | 基板処理方法および基板搬送装置 |
CN1513107A (zh) * | 2001-06-06 | 2004-07-14 | Fsi���ʹ�˾ | 用于组合式加热和冷却设备的加热部件以及其加热方法 |
US20070090520A1 (en) * | 2005-10-25 | 2007-04-26 | Jin-Young Choi | Cooling plate, bake unit, and substrate treating apparatus |
US20080025823A1 (en) * | 2006-07-31 | 2008-01-31 | Masahiko Harumoto | Load lock device, and substrate processing apparatus and substrate processing system including the same |
JP2008034739A (ja) * | 2006-07-31 | 2008-02-14 | Dainippon Screen Mfg Co Ltd | ロードロック装置、それを備えた基板処理装置および基板処理システム |
US20090156019A1 (en) * | 2007-06-29 | 2009-06-18 | Naoyuki Satoh | Substrate processing apparatus and method |
US20090023297A1 (en) * | 2007-07-18 | 2009-01-22 | Sokudo Co., Ltd. | Method and apparatus for hmds treatment of substrate edges |
JP2013145916A (ja) * | 2013-04-08 | 2013-07-25 | Tokyo Electron Ltd | 熱処理装置、熱処理方法及び記憶媒体 |
JP3205145U (ja) * | 2015-07-27 | 2016-07-07 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板リフトピンアクチュエータ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110233118A (zh) * | 2018-03-06 | 2019-09-13 | 株式会社斯库林集团 | 基板处理装置 |
CN110233118B (zh) * | 2018-03-06 | 2023-07-07 | 株式会社斯库林集团 | 基板处理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20190273005A1 (en) | 2019-09-05 |
TWI714955B (zh) | 2021-01-01 |
CN116845006A (zh) | 2023-10-03 |
JP2019153665A (ja) | 2019-09-12 |
TW201939579A (zh) | 2019-10-01 |
US11387121B2 (en) | 2022-07-12 |
KR102164765B1 (ko) | 2020-10-13 |
JP7116558B2 (ja) | 2022-08-10 |
KR20190104877A (ko) | 2019-09-11 |
CN110223933B (zh) | 2023-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102460650B (zh) | 真空加热/冷却装置及磁阻元件的制造方法 | |
CN110223933A (zh) | 基板处理装置及基板处理系统 | |
US20160035601A1 (en) | Bake unit, substrate treating apparatus including the unit, and substrate treating method | |
JP5561664B2 (ja) | リフトピン機構 | |
CN105723496B (zh) | 基板处理装置和基板处理方法 | |
EP1153420A1 (en) | Resistively heated single wafer furnace | |
JP7027198B2 (ja) | 基板処理装置 | |
CN104952727A (zh) | 热处理装置 | |
KR101511512B1 (ko) | 냉각팬을 구비한 서셉터 제조장치 | |
KR20100033253A (ko) | 기판 처리 장치 및 방법 | |
CN110233118B (zh) | 基板处理装置 | |
CN110249409A (zh) | 衬底处理方法及衬底处理装置 | |
KR100346358B1 (ko) | 평판형상워크를무풍가열할수있는열처리장치 | |
KR102181631B1 (ko) | 기판 처리 장치 | |
JP2004214689A (ja) | 基板処理装置 | |
CN108598015A (zh) | 热处理设备及其热处理方法 | |
CN104919580A (zh) | 用于对物体进行热处理的装置和方法 | |
TW200401388A (en) | Substrate transfer apparatus and substrate transfer method | |
JP2006324336A (ja) | 熱処理装置 | |
JP6427949B2 (ja) | 真空焼入れ処理方法 | |
JP4499147B2 (ja) | 基板処理装置 | |
KR20210000955A (ko) | 기판 베이킹 장치 | |
KR20020028247A (ko) | 웨이퍼 가열 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |