CN110233118B - 基板处理装置 - Google Patents
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Abstract
本发明是一种基板处理装置,对基板进行热处理,所述装置包含以下要素,即为:热处理板;壳体,形成由热处理板所致的热处理环境,活动顶板,能够在所述壳体的顶面与所述热处理板之间升降;控制部,在将基板搬入搬出时,使所述活动顶板移动到上升位置,在进行热处理时,使所述活动顶板移动到下降位置,针对每个基板调整所述下降位置。
Description
技术领域
本发明涉及一种对半导体晶片、液晶显示器用基板、等离子体显示器用基板、有机EL(Electroluminescence,电致发光)用基板、FED(Field Emission Display,场发射显示器)用基板、光显示器用基板、磁盘用基板、磁光盘用基板、光罩用基板、太阳电池用基板等各种基板(以下简称作基板)进行热处理的基板处理装置。
背景技术
以往,作为这种装置,有如下装置,具备:热处理板,对所载置的基板进行加热;罩部件,将热处理板的上部包围,能够相对于热处理板升降地构成,形成由热处理板所致的热处理环境;壳体,将热处理板及罩部件包围;顶板,设置在罩部件的顶面与热处理板的上表面之间;及位置调整部件,对顶板的下表面与热处理板的上表面的间隔进行调整(例如参照日本专利特开2000-3843号公报)。
在如此构成的基板处理装置中,利用位置调整部件将基板与顶板的间隔预先调整为特定状态而对基板进行热处理。由此,使基板中的温度分布的面内均匀性提升,而使基板中的处理的面内均匀性提升。
但是,具有这种构成的以往例子存在如下问题。
也就是说,以往的装置中,基板与顶板的间隔预先利用位置调整部件进行调整,因此,存在难以针对每个基板控制基板中的温度分布的面内均匀性的问题。
具体来说,在以往例子中,通过包括螺栓及螺帽的位置调整部件,使顶板相对于热处理板的高度位置固定。因此,在对某基板进行处理时,无法将基板与顶板的间隔缩小而使基板的热相对不易散发,或在对其他基板进行处理时,无法将基板与顶板的间隔扩大而使基板的热相对容易散控发,从而无法积极制表示基板中的热分布的面内均匀性的均热性能。
发明内容
本发明是鉴于这种情况而成的,其目的在于提供一种通过改进顶板而能够控制基板的均热性能的基板处理装置。
本发明为了达成这种目的而采用如下构成。
本发明是一种基板处理装置,对基板进行热处理,所述装置包含以下要素,即为:热处理板,载置基板,并对基板进行加热;壳体,将所述热处理板的上方覆盖,形成由热处理板所致的热处理环境;活动顶板,能够在所述壳体的顶面与所述热处理板之间升降;控制部,当在与所述热处理板之间将基板搬入搬出时,使所述活动顶板移动到靠近所述壳体的顶面的上升位置,当在所述热处理板上载置基板并对基板进行热处理时,使所述活动顶板移动到低于所述上升位置且距所述热处理板上的基板面特定高度的下降位置,针对每个基板调整所述下降位置。
根据本发明,控制部当在与热处理板之间将基板搬入搬出时,使活动顶板移动到上升位置,当在热处理板上载置基板并对基板进行热处理时,使活动顶板移动到下降位置,针对每个基板调整该下降位置。因此,通过针对每个基板使下降位置的高度不同,能够针对每个基板控制基板中的温度分布的面内均匀性。此外,即便使活动顶板位于下降位置,因为在将基板搬入搬出时使活动顶板向上升位置上升,所以在将基板搬入搬出时活动顶板不会进行干涉,能够顺畅地进行基板的搬入搬出。
此外,在本发明中,所述活动顶板优选在俯视下的中央部形成直径小于基板直径的圆形开口。
基板的周缘部相较于中央部容易温度下降,但通过来自活动顶板的辐射,能够抑制基板的周缘部的温度下降。此外,最近为了微细加工工艺,有时要形成称作涂布碳膜的底层膜。为了产生该底层膜,要以高温对基板进行热处理,但此时会产生包含升华物的气体。因为能够将该气体通过活动顶板的开口顺畅地排出,所以能够抑制升华物附着于活动顶板。结果能够抑制升华物自活动顶板落下而污染基板。
此外,在本发明中,所述活动顶板优选俯视下的直径形成为小于基板的直径。
基板的中央部的温度下降更加不易,因此,能够在有意识地增大基板的中央部的温度与周缘部的处理差的状态下进行热处理。
此外,在本发明中,还具备使所述活动顶板升降的升降机构,所述升降机构优选配置于较所述热处理板更靠下方,相对于所述热处理板热分离。
最近为了微细加工工艺,有时要形成称作涂布碳膜的底层膜。为了产生该底层膜,相较于此前100~150℃左右的热处理,以300~500℃左右的高温进行热处理。如果处于这种高温,担忧升降机构会因热的影响而发生故障。因此,通过将升降机构配置于较热处理板更靠下方而热分离,能够避免这种不良情况从而提升运转率。
此外,在本发明中,优选所述热处理板俯视下呈圆形,所述活动顶板俯视下呈具有大于所述热处理板的直径的对角长的矩形,所述升降机构与所述活动顶板的四角连结。
热处理板的热不易传递到活动顶板的四角,因此,热不易传递到升降机构。因此,升降机构不易受到热的影响而能够抑制故障的产生。
此外,在本发明中,所述活动顶板优选包括陶瓷或金属与陶瓷的合金。
即便为了产生底层膜而进行高温的热处理也能够防止包括陶瓷或金属与陶瓷的合金的活动顶板因热产生变形。
附图说明
为了对发明进行说明而图示了目前认为较佳的若干方式,但应理解发明并不限定于如图示般的构成及方案。
图1是表示实施例的基板处理装置的整体构成的概略构成图。
图2是活动顶板的俯视图。
图3是表示升降销的前端部附近的纵截面图。
图4是表示将基板搬入搬出的状态的纵截面图。
图5是表示对基板进行加热的状态的纵截面图。
图6是表示活动顶板的变化例的纵截面图。
图7是表示活动顶板的变化例的俯视图。
具体实施方式
以下,参照附图对本发明的一实施例进行说明。
图1是表示实施例的基板处理装置的整体构成的概略构成图,图2是活动顶板的俯视图,图3是表示升降销的前端部附近的纵截面图。
实施例的基板处理装置1对基板W实施热处理。具体来说,为了微细加工工艺,进行例如形成称作涂布碳膜的底层膜时的热处理。为了产生该底层膜,以300~500℃左右的高温进行热处理。
基板处理装置1具备下部底板3、水冷式底板5、热处理板7、活动顶板单元9、升降销单元11、壳体13及挡闸单元15。
该基板处理装置1自相邻而配置的搬送臂17将基板W搬入,实施热处理后,将处理完毕的基板W利用搬送臂17搬出。
下部底板3在上表面竖立设置支柱19,在其上部配置有水冷式底板5。水冷式底板5抑制热处理板7的热向下方传递。具体来说,水冷式底板5例如在内部遍及整体而形成有能够流通冷媒的冷媒流路21。在该冷媒流路21中流通例如冷却水作为冷媒。该冷却水的温度调整为例如20℃。
热处理板7俯视下呈圆形。其直径稍大于基板W的直径。热处理板7内置有未图示的加热器等加热构件,例如以表面温度成为400℃的方式被加热。热处理板7通过设置在其下表面与水冷式底板5的上表面之间的支柱23,以自水冷式底板5向上方离开的状态配置。热处理板7在与俯视下正三角形的各顶点对应的位置形成有贯通口25。
在热处理板7附设有活动顶板单元9。活动顶板单元9具备升降底板27、升降机构29、支柱31及活动顶板33。
升降底板27具备避免与支柱23及后述的升降销41干渉的开口。升降机构29例如由气缸所构成。升降机构29以使具有作动轴的部分朝向上方的姿势密接于水冷式底板5而安装。该升降机构29的作动轴的前端部的高度能够在任意位置固定。升降机构29的作动轴与升降底板27的底面连结。如果使升降机构29的作动轴升降,那么能够使升降底板27的高度位置改变。升降底板27在其上表面竖立设置有例如4根支柱31。在4根支柱31的上端安装有活动顶板33。
如图2所示,活动顶板33在俯视下在中央部形成有开口35。开口35形成为俯视下小于基板W的直径。该活动顶板33通过升降机构29作动而与升降底板27一起升降。活动顶板33的升降位置的移动跨及对基板W进行热处理时的下降位置与将基板W搬入时的上升位置。另外,下降位置优选基板W的上表面与活动顶板33的下表面的距离为约10mm。其原因在于:通过发明人等的实验得知,要提升基板W的表面中的温度分布的面内均匀性则优选该距离。
活动顶板33呈对角长形成得长于热处理板7的直径的矩形。4根支柱31各自的上端与活动顶板33的下表面的四角连结。活动顶板33的四角位于远离热源即俯视圆形的热处理板7的位置。因此,即便因热处理板7的辐射热将活动顶板33加热,也能够使热不易传递到支柱31。因此,升降机构29不易受到热的影响而能够抑制故障的产生。
所述活动顶板33优选包括陶瓷或金属与陶瓷的合金。由此,即便进行高温的热处理,也能够防止因热引起的变形。
升降销单元11具备驱动机构37、升降环39及3根升降销41。另外,升降销41因图示原因仅描绘2根。
驱动机构37例如由气缸所构成。驱动机构37以使具有作动轴的部分朝向下方且使相反侧密接于水冷式底板5的下表面的状态安装。在作动轴的下部连结有升降环39。在升降环39的上表面竖立设置有3根升降销41。驱动机构39能够调节其作动轴的高度位置使之跨及3根升降销41自热处理板7的上表面向上方突出的交接位置(图1中的双点划线)与3根升降销41自热处理板7的上表面向下方没入的处理位置(图1中的实线)这二处。3根升降销41插通到形成于热处理板7的3处贯通口25。
升降销41优选构成为如图3所示。升降销41具备芯部41a、外筒41b及石英球41c。芯部41a形成为位于主体部41d的上部的前端部41e的直径小于主体部41d。外筒41b形成为除前端部以外内径稍大于石英球41c的外径。外筒41b的前端部形成为内径小于石英球41c的直径。石英球41c形成为直径稍小于前端部41e。因此,如果在将石英球41c载置于前端部41e的上表面的状态下覆盖外筒41b,那么石英球41c的1/3左右成为自外筒41b突出的状态。在该状态下,将卡合销41g压入贯通芯部41d及外筒41b的贯通口41f,由此,将外筒41b与石英球41c一起固定于芯部41a而构成升降销41。另外,石英球41c以外的部件为金属制。
石英适合作为可耐高温环境的材料,但是如果考虑强度及成本,则难以使整个升降销41为石英制。因此,如所述般仅使前端部的石英球41c为石英制,由此能够抑制成本。此外,石英相较于作为基板W的材料的单晶硅来说高度稍低,因此,损伤基板W的下表面的可能较低,而且因为是球状所以能够使接触面积最小。
壳体13将热处理板7的上方覆盖,形成由热处理板7所致的热处理环境。壳体13在其一面形成有搬入搬出口43。搬入搬出口43自热处理板7的上表面附近的高度位置朝上开口。搬送臂17通过该搬入搬出口43进行基板W的搬入搬出。
在搬入搬出口43附设有挡闸单元15。挡闸单元15具备驱动机构45及挡闸本体47。驱动机构45以其作动轴的部分朝向上方之姿势使一部分密接于水冷式底板5而安装。在作动轴的上部连结有挡闸本体47。当驱动机构45使作动轴伸长时,挡闸本体47上升而将搬入搬出口43封闭(图1所示的实线),当驱动机构45使作动轴收缩时,挡闸本体47下降而将搬入搬出口43打开(图1所示的双点划线)。
壳体13在其顶面形成有排气口49。排气口49与排气管51连通连接。壳体13的排气口49与热处理板7的上表面的间隔例如为30mm左右。排气管51与未图示的排气设备连通连接。在排气管51的一部分配置有压力传感器53。该压力传感器53对排气管51内的排气压力进行检测。
壳体13沿排气管51的上表面设置有护套加热器55。该护套加热器55将壳体13或排气管51加热,防止在包含升华物的气体接触壳体13时气体冷却而升华物附着于壳体13的内壁。
控制部61包括未图示的CPU(Central Processing Unit,中央处理器)及存储器。控制部61进行热处理板7的温度控制、活动顶板单元9的升降控制、升降销单元11的驱动控制、挡闸单元15的开闭控制、护套加热器55的温度控制、基于压力传感器53的排气控制等。此外,控制部61能够根据基板W对活动顶板单元9的升降控制中的下降位置进行各种操作。例如,在规定每个基板W的处理条件或顺序的配方中预先规定活动顶板33的下降位置,操作未图示的指示部,预先在配方中指示相当于活动顶板33距基板W的表面的距离的参数。控制部61例如在对基板W进行处理时,参照由装置操作员指示的与基板W相应的配方,根据其参数操作升降机构29。由此,能够针对每个基板W对活动顶板33的下降位置进行调整。
其次,参照图4及图5说明利用所述构成的基板处理装置对基板W进行的处理。另外,图4是表示将基板搬入搬出的状态的纵截面图,图5是表示对基板进行加热的状态的纵截面图。
首先,如图4所示,控制部61操作活动顶板单元9使活动顶板33移动到上升位置。进一步地,控制部61操作升降销单元11,使3根升降销41上升到交接位置。与这些操作一起,控制部61操作挡闸单元15使搬入搬出口43打开。
然后,控制部61使搬送臂17以位于高于交接位置且低于上升位置的活动顶板的下表面的位置的状态自搬入搬出口43进入,在热处理板7的上方使搬送臂17下降。由此,将基板W交接给位于交接位置的升降销41。然后,使搬送臂17自搬入搬出口43退出,并且操作挡闸单元15使搬入搬出口43封闭。
接着,如图5所示,控制部61操作升降销单元11,使3根升降销41下降到处理位置。由此,对基板W进行400℃的加热处理。控制部61参照配方历时所规定的加热时间进行加热处理。
控制部61在经过特定加热时间后,操作活动顶板单元9及升降销单元11,使活动顶板33上升到上升位置,并且使升降销41上升到交接位置。接着,控制部61操作挡闸单元15,使搬入搬出口43打开。进一步地,控制部61使搬送臂17自较交接位置更靠下方且较热处理板7的上表面更靠上方的高度进入搬入搬出口43。然后,使搬送臂17上升到高于交接位置且低于活动顶板33的下表面的位置,由此,搬送臂17自升降销41接收处理完毕的基板W。接着,使搬送臂17自搬入搬出口43退出,由此使处理完毕的基板W搬出。
通过所述一连串动作完成对一片基板W的热处理,但在对新基板W进行处理时,控制部61例如能够参照由装置操作员指示的配方,利用活动顶板单元9使活动顶板33的上升位置为配方所指示的位置。
根据本实施例,控制部61当在与热处理板7之间将基板W搬入搬出时,使活动顶板33移动到上升位置,当在热处理板7上载置基板W并对基板W进行热处理时,使活动顶板33移动到下降位置,针对每个基板W调整该下降位置。因此,通过使下降位置的高度针对每个基板W不同,能够针对每个基板W控制基板W的面内温度分布的均匀性。此外,即便使活动顶板33位于下降位置,因为在将基板W搬入搬出时使活动顶板33向上升位置上升,所以将基板W搬入搬出时搬送臂17与活动顶板33不会干涉,而能够顺畅地进行基板W的搬入搬出。
进一步地,通过活动顶板33获得以下效果,所述活动顶板33形成有直径小于基板W的直径的圆形的开口35。
基板W的周缘部相较于中央部容易温度下降,但通过来自活动顶板33的辐射,能够抑制基板W的周缘部的温度下降。此外,在形成称作涂布碳膜的底层膜时,因高温的热处理而会产生包含升华物的气体。因为能够将该气体通过活动顶板33的开口35顺畅地排出,所以能够抑制升华物附着于活动顶板33。结果能够抑制升华物自活动顶板33落下而污染基板。此外,能够抑制用以除去附着于活动顶板33的升华物的维护次数,因此,能够提升基板处理装置1的运转率。
此外,活动顶板单元9的升降机构29密接于水冷式底板5而配置,因此,能够防止因热处理单元7引起的高温(300~500℃)使升降机构29因热的影响而发生故障。因此,能够提升基板处理装置1的运转率。
<变化例>
也可如基板处理装置1A般构成来代替所述基板处理装置1。此处,参照图6及图7。另外,图6是表示活动顶板的变化例的纵截面图,图7是表示活动顶板的变化例的俯视图。
该基板处理装置1A中,活动顶板33的构造与所述基板处理装置1不同。具体来说,活动顶板33A具备顶板部71及支撑部73。
顶板部71形成为俯视下的直径小于基板W的直径。支撑部73自顶板部71的周缘部朝向四个方向延伸。在各支撑部73的端部连结有支柱31。
根据这种基板处理装置1A,基板W的中央部的温度下降更加不易,因此,能够在有意识地增大基板W的中央部的温度与周缘部的处理差的状态下进行热处理。
本发明并不限于所述实施方式,能够如下所述般变化实施。
(1)在所述实施例中,活动顶板33具有开口35,活动顶板33A的直径小于基板W的直径,但本发明并不限定于这种方式。例如,也可采用如冲孔板般均等地形成多个贯通口的活动顶板33B来代替这些活动顶板33、33A。
(2)在所述实施例中,使活动顶板单元9的升降机构29、升降销单元11的驱动机构37及挡闸单元15的驱动机构45密接于水冷式底板5而安装,但本发明并不限定于这种配置。例如,也可配置为自水冷式底板5向下方离开以不易受到来自热处理板7的高温的影响。
(3)在所述实施例中,活动顶板33是具有开口35的平面状的板材,但本发明并不限定于这种方式。例如,活动顶板33也可具有随着自基板W的周缘部侧朝向开口35的中心慢慢地变高的圆锥形状的山形的立体形状。据此,能够将自包含基板W产生的升华物的气体有效率地导出排气口49。
(4)在所述实施例中,升降机构29由气缸所构成,但本发明并不限定于这种构成。作为升降机构29,也可采用马达代替气缸。另外,驱动机构37、45也同样。
(5)在所述实施例中,活动顶板33为陶瓷或金属与陶瓷的合金,但活动顶板33的材料并不限定于这些。
Claims (7)
1.一种基板处理装置,对基板进行热处理,所述装置包含以下要素:
热处理板,载置基板,并对基板进行加热;
壳体,将所述热处理板的上方覆盖,形成由热处理板所致的热处理环境;
活动顶板,能够在所述壳体的顶面与所述热处理板之间升降;及
控制部,当在与所述热处理板之间将基板搬入搬出时,使所述活动顶板移动到靠近所述壳体的顶面的上升位置,当在所述热处理板上载置基板并对基板进行热处理时,使所述活动顶板移动到低于所述上升位置且距所述热处理板上的基板面特定高度的下降位置,针对每个基板调整所述下降位置,且
所述活动顶板具备顶板部及自所述顶板部的周缘部延伸的支撑部,所述顶板部形成为俯视下的直径小于基板的直径。
2.根据权利要求1所述的基板处理装置,其还具备升降机构,由所述控制部操作,使所述活动顶板升降,且
所述升降机构配置于较所述热处理板更靠下方,相对于所述热处理板热分离。
3.根据权利要求2所述的基板处理装置,其中
所述热处理板俯视下呈圆形,
所述活动顶板俯视下呈具有大于所述热处理板的直径的对角长的矩形,且所述升降机构与所述活动顶板的四角连结。
4.根据权利要求1所述的基板处理装置,其中
所述活动顶板包括陶瓷或金属与陶瓷的合金。
5.根据权利要求2所述的基板处理装置,其中
所述活动顶板包括陶瓷或金属与陶瓷的合金。
6.根据权利要求3所述的基板处理装置,其中
所述活动顶板包括陶瓷或金属与陶瓷的合金。
7.根据权利要求1所述的基板处理装置,其中
所述控制部将所述基板的上表面与所述活动顶板的下表面的距离为10mm的位置作为所述下降位置。
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CN110233118A (zh) | 2019-09-13 |
TW201946183A (zh) | 2019-12-01 |
JP2019153736A (ja) | 2019-09-12 |
US11495476B2 (en) | 2022-11-08 |
KR102194370B1 (ko) | 2020-12-23 |
TWI751404B (zh) | 2022-01-01 |
JP7109211B2 (ja) | 2022-07-29 |
KR20190106672A (ko) | 2019-09-18 |
US20190279886A1 (en) | 2019-09-12 |
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