JP2019153736A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP2019153736A JP2019153736A JP2018039542A JP2018039542A JP2019153736A JP 2019153736 A JP2019153736 A JP 2019153736A JP 2018039542 A JP2018039542 A JP 2018039542A JP 2018039542 A JP2018039542 A JP 2018039542A JP 2019153736 A JP2019153736 A JP 2019153736A
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- 239000000758 substrate Substances 0.000 title claims abstract description 162
- 238000012545 processing Methods 0.000 title claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 91
- 230000007246 mechanism Effects 0.000 claims description 38
- 230000003028 elevating effect Effects 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 10
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 238000012546 transfer Methods 0.000 abstract description 10
- 238000002791 soaking Methods 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001174 ascending effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
すなわち、従来の装置は、基板と天板との間隔が予め位置調整部材により調整されているので、基板における温度分布の面内均一性を基板ごとに制御することが困難であるという問題がある。
すなわち、請求項1に記載の発明は、基板に対して熱処理を行う基板処理装置において、基板を載置し、基板を加熱する熱処理プレートと、前記熱処理プレートの上方を覆って、熱処理プレートによる熱処理雰囲気を形成する筐体と、前記筐体の天井面と前記熱処理プレートとの間において昇降可能な可動天板と、前記熱処理プレートとの間で基板を搬入出する際には、前記筐体の天井面に近い上昇位置に前記可動天板を移動させ、前記熱処理プレートに基板を載置して基板に対して熱処理を行う際には、前記上昇位置より低く、前記熱処理プレート上の基板面から所定高さの下降位置に前記可動天板を移動させる制御部と、を備えていることを特徴とするものである。
W … 基板
3 … 下部ベースプレート
5 … 水冷式ベースプレート
7 … 熱処理プレート
9 … 可動天板ユニット
11 … 昇降ピンユニット
13 … 筐体
15 … シャッタユニット
29 … 昇降機構
33,33A … 可動天板
35 … 開口
37 … 駆動機構
41 … 昇降ピン
43 … 搬入出口
47 … シャッタ本体
51 … 排気管
61 … 制御部
Claims (6)
- 基板に対して熱処理を行う基板処理装置において、
基板を載置し、基板を加熱する熱処理プレートと、
前記熱処理プレートの上方を覆って、熱処理プレートによる熱処理雰囲気を形成する筐体と、
前記筐体の天井面と前記熱処理プレートとの間において昇降可能な可動天板と、
前記熱処理プレートとの間で基板を搬入出する際には、前記筐体の天井面に近い上昇位置に前記可動天板を移動させ、前記熱処理プレートに基板を載置して基板に対して熱処理を行う際には、前記上昇位置より低く、前記熱処理プレート上の基板面から所定高さの下降位置に前記可動天板を移動させ、前記下降位置を基板ごとに調整する制御部と、
を備えていることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置において、
前記可動天板は、平面視における中央部に、基板の直径より小径の円形状の開口が形成されていることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置において、
前記可動天板は、平面視における直径が、基板の直径よりも小さく形成されていることを特徴とする基板処理装置。 - 請求項1から3のいずれかに記載の基板処理装置において、
前記制御部により操作され、前記可動天板を昇降する昇降機構をさらに備え、
前記昇降機構は、前記熱処理プレートより下方に配置されて、前記熱処理プレートに対して熱的に分離されていることを特徴とする基板処理装置。 - 請求項4に記載の基板処理装置において、
前記熱処理プレートは、平面視で円形状を呈し、
前記可動天板は、平面視で前記熱処理プレートの直径より大なる対角長を有する矩形状を呈し、
前記昇降機構は、前記可動天板の四隅に連結されていることを特徴とする基板処理装置。 - 請求項1から5のいずれかに記載の基板処理装置において、
前記可動天板は、セラミックまたは金属とセラミックとの合金からなることを特徴とする基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018039542A JP7109211B2 (ja) | 2018-03-06 | 2018-03-06 | 基板処理装置 |
CN201910080720.6A CN110233118B (zh) | 2018-03-06 | 2019-01-28 | 基板处理装置 |
TW108103041A TWI751404B (zh) | 2018-03-06 | 2019-01-28 | 基板處理裝置 |
US16/260,311 US11495476B2 (en) | 2018-03-06 | 2019-01-29 | Substrate treating apparatus |
KR1020190011209A KR102194370B1 (ko) | 2018-03-06 | 2019-01-29 | 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2018039542A JP7109211B2 (ja) | 2018-03-06 | 2018-03-06 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019153736A true JP2019153736A (ja) | 2019-09-12 |
JP7109211B2 JP7109211B2 (ja) | 2022-07-29 |
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JP2018039542A Active JP7109211B2 (ja) | 2018-03-06 | 2018-03-06 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11495476B2 (ja) |
JP (1) | JP7109211B2 (ja) |
KR (1) | KR102194370B1 (ja) |
CN (1) | CN110233118B (ja) |
TW (1) | TWI751404B (ja) |
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- 2018-03-06 JP JP2018039542A patent/JP7109211B2/ja active Active
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- 2019-01-28 CN CN201910080720.6A patent/CN110233118B/zh active Active
- 2019-01-28 TW TW108103041A patent/TWI751404B/zh active
- 2019-01-29 US US16/260,311 patent/US11495476B2/en active Active
- 2019-01-29 KR KR1020190011209A patent/KR102194370B1/ko active IP Right Grant
Patent Citations (10)
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JP2005228962A (ja) * | 2004-02-13 | 2005-08-25 | Sumitomo Heavy Ind Ltd | レーザ照射装置及びレーザ照射方法 |
JP2006019472A (ja) * | 2004-07-01 | 2006-01-19 | Toppan Printing Co Ltd | 減圧乾燥装置及び減圧乾燥方法 |
JP2007242850A (ja) * | 2006-03-08 | 2007-09-20 | Nec Corp | 半導体製造装置及び半導体製造方法 |
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KR102194370B1 (ko) | 2020-12-23 |
US20190279886A1 (en) | 2019-09-12 |
TW201946183A (zh) | 2019-12-01 |
TWI751404B (zh) | 2022-01-01 |
KR20190106672A (ko) | 2019-09-18 |
US11495476B2 (en) | 2022-11-08 |
CN110233118A (zh) | 2019-09-13 |
CN110233118B (zh) | 2023-07-07 |
JP7109211B2 (ja) | 2022-07-29 |
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