CN110121576B - 单晶硅晶片的缺陷区域判定方法 - Google Patents

单晶硅晶片的缺陷区域判定方法 Download PDF

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Publication number
CN110121576B
CN110121576B CN201880005708.2A CN201880005708A CN110121576B CN 110121576 B CN110121576 B CN 110121576B CN 201880005708 A CN201880005708 A CN 201880005708A CN 110121576 B CN110121576 B CN 110121576B
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region
void
single crystal
wafer
defect
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CN110121576A (zh
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齐藤久之
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201880005708.2A 2017-02-21 2018-02-01 单晶硅晶片的缺陷区域判定方法 Active CN110121576B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-029663 2017-02-21
JP2017029663A JP6627800B2 (ja) 2017-02-21 2017-02-21 シリコン単結晶ウエハの欠陥領域判定方法
PCT/JP2018/003493 WO2018155126A1 (ja) 2017-02-21 2018-02-01 シリコン単結晶ウエハの欠陥領域判定方法

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CN110121576A CN110121576A (zh) 2019-08-13
CN110121576B true CN110121576B (zh) 2020-11-10

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JP (1) JP6627800B2 (ja)
KR (1) KR102519396B1 (ja)
CN (1) CN110121576B (ja)
WO (1) WO2018155126A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7172955B2 (ja) * 2019-11-05 2022-11-16 信越半導体株式会社 シリコン単結晶の欠陥領域判定方法およびシリコン単結晶の製造方法
EP3839107A1 (de) 2019-12-18 2021-06-23 Siltronic AG Verfahren zur bestimmung von defektdichten in halbleiterscheiben aus einkristallinem silizium
CN111781243A (zh) * 2020-06-16 2020-10-16 天津中环领先材料技术有限公司 一种硅片微缺陷测试方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2936916B2 (ja) 1992-09-10 1999-08-23 信越半導体株式会社 シリコン単結晶の品質評価方法
JP3611236B2 (ja) * 1998-09-30 2005-01-19 東芝セラミックス株式会社 シリコン単結晶ウエハの製造方法
WO2002002852A1 (fr) * 2000-06-30 2002-01-10 Shin-Etsu Handotai Co., Ltd. Plaquette en silicium monocristallin et procede de fabrication
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
JP4231275B2 (ja) * 2002-11-14 2009-02-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法およびその製造装置およびシリコンウェーハ
JP2006208314A (ja) * 2005-01-31 2006-08-10 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの結晶欠陥の評価方法
JP4784192B2 (ja) * 2005-07-28 2011-10-05 信越半導体株式会社 シリコンウエーハの評価方法
FR2899380B1 (fr) * 2006-03-31 2008-08-29 Soitec Sa Procede de revelation de defauts cristallins dans un substrat massif.
JP2012079932A (ja) * 2010-10-01 2012-04-19 Shin Etsu Handotai Co Ltd シリコン単結晶の結晶欠陥の評価方法
JP5993550B2 (ja) * 2011-03-08 2016-09-14 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
KR101997561B1 (ko) 2013-02-22 2019-07-08 신에쯔 한도타이 가부시키가이샤 실리콘 단결정봉의 제조방법
JP6052189B2 (ja) * 2014-01-16 2016-12-27 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法

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Publication number Publication date
KR102519396B1 (ko) 2023-04-07
JP6627800B2 (ja) 2020-01-08
KR20190117496A (ko) 2019-10-16
CN110121576A (zh) 2019-08-13
JP2018135227A (ja) 2018-08-30
WO2018155126A1 (ja) 2018-08-30

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