CN110112171B - 一种显示面板的制作方法及显示面板 - Google Patents

一种显示面板的制作方法及显示面板 Download PDF

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CN110112171B
CN110112171B CN201910422202.8A CN201910422202A CN110112171B CN 110112171 B CN110112171 B CN 110112171B CN 201910422202 A CN201910422202 A CN 201910422202A CN 110112171 B CN110112171 B CN 110112171B
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flexible substrate
thin film
film transistor
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CN110112171A (zh
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狄沐昕
梁志伟
刘英伟
王珂
曹占锋
袁广才
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BOE Technology Group Co Ltd
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Abstract

本发明涉及显示技术领域,特别涉及一种显示面板的制作方法及显示面板。该制作方法包括:在玻璃基板一侧表面依次形成牺牲层和柔性衬底;在柔性衬底上形成连接过孔对;在柔性衬底上形成金属层,并通过构图工艺形成导电层图案,导电层图案具有与连接过孔对应的导电层;在所述柔性衬底上形成与所述连接过孔对一一对应的薄膜晶体管器件,在薄膜晶体管器件背离柔性衬底一侧形成与薄膜晶体管器件的源电极电连接的驱动芯片;分离柔性衬底和牺牲层;在柔性衬底背离薄膜晶体管器件的表面形成与导电层电连接的Micro LED。柔性衬底能够起到良好的保护作用,规避了剥离过程中金属断裂的可能,有利于实现显示面板双面背板的成型。

Description

一种显示面板的制作方法及显示面板
技术领域
本发明涉及显示技术领域,特别涉及一种显示面板的制作方法及显示面板。
背景技术
全面屏技术逐渐成为手机等手持设备的主流技术,目前采用GOA(Gate Driver OnArray,阵列基板栅极驱动)技术实现左右边框的窄型化,采用COF(Chip On Film,薄膜覆晶封装)技术实现下边框的窄型化。但是无论是GOA还是COF,这种在显示屏边框焊接的技术依然无法实现无缝拼接。
基于上述背景,目前存在一种颇受关注的TGV(Through glass Via,玻璃通孔)技术,其制作过程一般为:首先在玻璃背板上打孔,然后采用电镀工艺在玻璃两面电镀Cu,随后采用化学机械抛光工艺去除玻璃两面的Cu。TGV背板制作完成后交由面板厂商进行阵列基板的背板制作,但是TGV基板本身以及基于TGV基板制作的薄膜晶体管背板仍然面临许多挑战,其中最难以解决的是在工艺制程中因高温导致TGV孔内Cu膨胀,进而导致覆盖在其上的膜层断线。此时,同样作为显示器件基板材料的聚酰亚胺(PI),使得避免该问题成为可能,但是,PI基板材质薄,且过于柔软,在其上制作阵列基板后,对于剥离或背面的焊接制程都有较大的难度。
因此,若能兼具玻璃的材质,又能解决金属导线在通孔中的膨胀问题,对于打通双面背板的工艺,实现无缝拼接显示具有重要意义。
发明内容
本发明公开了一种显示面板的制作方法及显示面板,能够在制备显示面板的过程中保护导电层,有利于实现显示面板双面背板的成型。
为达到上述目的,本发明提供以下技术方案:
一种显示面板的制作方法,包括:
在玻璃基板一侧表面依次形成牺牲层和柔性衬底;
在所述柔性衬底上形成用于与Micro LED一一对应的连接过孔对,每一个所述连接过孔对包括两个连接过孔;
在所述柔性衬底上形成金属层,并通过构图工艺形成导电层图案,所述导电层图案具有与所述连接过孔一一对应的导电层;每一对相互对应的所述导电层和所述连接过孔中,所述导电层的至少一部分位于所述连接过孔内;
在所述柔性衬底上形成与所述连接过孔对一一对应的薄膜晶体管器件,其中,所述薄膜晶体管器件的漏电极与一个所述导电层电连接,所述薄膜晶体管器件的辅助走线与另一个所述导电层电连接;
在所述薄膜晶体管器件背离所述柔性衬底一侧形成与所述薄膜晶体管器件的源电极电连接的驱动芯片;
分离所述柔性衬底和所述牺牲层;
在所述柔性衬底背离所述薄膜晶体管器件的表面形成与所述导电层电连接的Micro LED。
上述制作方法制备的显示面板中,柔性衬底能够保护整个背板结构,设置于柔性衬底上的连接过孔对连通了柔性衬底的两侧,薄膜晶体管结构和Micro LED通过连接过孔内的导电层实现电路导通;导电层受到热胀冷缩的影响较小,同时柔性衬底能够进一步保护导电层不受温度影响,牺牲层的存在则规避了剥离过程中金属断裂的可能,有利于实现显示面板双面背板的成型,对于窄边框或无边框拼接显示具有重要的意义。
可选地,所述在所述柔性衬底上形成过孔包括:
在所述柔性衬底上通过干刻工艺形成连接过孔。
可选地,所述导电层图案还包括形成于所述柔性衬底表面与所述薄膜晶体管的半导体有源层对应的遮光层,所述半导体有源层在所述柔性衬底上的投影落在所述遮光层在所述柔性衬底上的投影内。
可选地,所述在所述薄膜晶体管器件背离所述柔性衬底一侧形成与所述薄膜晶体管器件的源电极电连接的驱动芯片包括:
在所述薄膜晶体管器件背离所述柔性衬底一侧的表面形成平坦层;
在所述平坦层上形成焊接过孔;
在所述平坦层上沉积金属层形成芯片焊盘,所述金属层的至少一部分位于所述焊接过孔内以用于与所述源电极电连接;
在所述芯片焊盘上焊接所述驱动芯片。
可选地,在所述柔性衬底上形成薄膜晶体管器件之前,还包括:
在所述柔性衬底表面形成流平层。
可选地,所述在所述柔性衬底背离所述薄膜晶体管器件的表面形成与所述导电层电连接的Micro LED包括:
将所述Micro LED与所述柔性衬底背离所述薄膜晶体管器件的表面对接;
将所述Micro LED转移到所述柔性衬底上。
一种由上述制作方法制作的显示面板,包括:
柔性衬底,所述柔性衬底具有连接过孔对,每一个所述连接过孔对包括两个连接过孔;所述柔性衬底的第一侧形成有与所述连接过孔一一对应的导电层,每一对相互对应的所述导电层和所述连接过孔中,所述导电层至少一部分位于所述连接过孔内;
设置于所述柔性衬底具有所述导电层一侧且与所述连接过孔对一一对应的薄膜晶体管器件,所述薄膜晶体管器件的漏电极与一个所述导电层连接,所述薄膜晶体管器件的辅助走线与另一个所述导电层连接;
设置于所述薄膜晶体管器件背离所述柔性衬底一侧的驱动芯片,所述驱动芯片与所述薄膜晶体管器件的源极连接;
设置于所述柔性衬底背离所述导电层一侧的Micro LED,所述Micro LED与所述连接过孔对一一对应。
可选地,还包括遮光层,所述遮光层形成于所述柔性衬底具有所述导电层的一侧且与所述薄膜晶体管器件的半导体有源层对应,使得所述半导体有源层在所述柔性衬底上的投影落在所述遮光层在所述柔性衬底上的投影内。
可选地,所述柔性衬底与所述薄膜晶体管器件之间具有流平层。
可选地,所述驱动芯片通过芯片焊盘与所述薄膜晶体管器件的源极连接。
附图说明
图1为本发明实施例提供的一种显示面板的制作方法流程图;
图2为本发明实施例提供的一种显示面板的制作方法中形成驱动芯片的流程图;
图3为本发明实施例提供的一种显示面板的制作方法中制作Micro LED的流程图;
图4至图20为本发明实施例提供一种显示面板的制作方法制作过程中的结构变化图;
图21为本发明实施例提供的一种显示面板的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图1至图20所示,本发明实施例提供了一种显示面板的制作方法,该制作方法的工作原理在于先在衬底一侧制备薄膜晶体管结构,后在衬底另一侧制备Micro LED17,使得制备的显示面板可以在其显示面侧实现全像素覆盖,而相关控制结构可以设置于显示面板的背板侧。该制作方法具体包括:
步骤S1:在玻璃基板1一侧表面依次形成牺牲层2和柔性衬底3。
在步骤S1中,如图4所示,玻璃基板1具有两个相对的表面,设定形成牺牲层2和柔性衬底3的一侧为玻璃基板1的第一表面。首先在玻璃基板1的第一表面形成牺牲层2,得到如图5所示的结构,再在牺牲层2背离玻璃基板1的一侧表面形成柔性衬底3,得到如图6所示的结构。
本发明实施例提供的制作方法是基于TGV技术改进的,在整个制备过程中,玻璃基板1作为制作显示面板其中一侧的薄膜晶体管结构的载体,在制备显示面板另一侧的MicroLED17结构时需要将玻璃基板1去除。其中,柔性衬底3能够为后续制备的显示器件乃至整个显示面板结构提供良好的保护效果,而牺牲层2设置于玻璃基板1与柔性,通过自柔性衬底3剥离牺牲层2即可剥离玻璃基板1。并且,牺牲层2只与柔性衬底3接触,能够避免在后续激光剥离作业中剥离操作导致金属断裂的问题,保护了剥离后柔性衬底3面向玻璃基板1一侧表面的平整度和洁净度,无需进行表面处理,节省了能耗。
优选地,此处的柔性衬底3的材料优选为PI,即聚酰亚胺。
步骤S2:在柔性衬底3上形成用于与Micro LED17一一对应的连接过孔对,每一个连接过孔对包括两个连接过孔31,得到如图7所示的结构。
在步骤S2中,在柔性衬底3上形成上述连接过孔对,是为了后续在柔性衬底3背离薄膜晶体管结构的一侧制作Micro LED17,为了将柔性衬底3两侧的薄膜晶体管结构和Micro LED17的电路连接导通。其中,连接过孔对包括两个连接过孔31,方便Micro LED17与薄膜晶体管结构通过两个连接过孔31实现电路回路导通。
优选的,此处的连接过孔31通过干刻工艺形成。
如图3所示,上述连接过孔对的连接过孔31贯穿柔性衬底3,使得连接过孔31对应的牺牲层2裸露。
步骤S3:在柔性衬底3上形成金属层,并通过构图工艺形成导电层41图案,导电层41图案具有与连接过孔31一一对应的导电层41;每一对相互对应的导电层41和连接过孔31中,导电层41的至少一部分位于连接过孔31内,其结构如图8所示。
在步骤S3中,根据需要通过构图工艺形成在柔性衬底3背离玻璃基板1的一侧形成导电层41图案,具体的,导电层41图案包括与连接过孔31一一对应的导电层41。对于任一个连接过孔31,与其对应的导电层41自连接过孔31的孔内延伸至连接过孔31外柔性衬底3背离玻璃基板1的一侧表面,使得最终形成于柔性衬底3背离玻璃基板1一侧的薄膜晶体管结构通过导电层41与最终形成于柔性衬底3背离薄膜晶体管结构一侧Micro LED17连接实现电路导通。
此处,导电层41通过在连接过孔31内沉积金属形成,层状结构的金属受到热胀冷缩的影响较小,能够有效降低高温作业中金属结构的断裂风险。
优选地,金属层的材质可以为铜或铜合金。
作为一种优选的实施例,在步骤S3中,通过对金属层构图形成的导电层41图案中,除了用于连通柔性衬底3两侧的电路的导电层41之外,还包括遮光层42(如图8所示),该遮光层42形成于柔性衬底3表面且与薄膜晶体管器件的半导体有源层7对应,半导体有源层7在柔性衬底3上的投影落在遮光层42在柔性衬底3上的投影内,能够防止Micro LED17发出的光线照射到薄膜晶体管器件中的半导体有源层7对其造成影响。
进一步地,在柔性衬底3上形成薄膜晶体管器件之前,即在步骤S3之后、步骤S3之前,还包括在柔性衬底3表面形成流平层5,得到如图9所示的结构。
制作流平层5使得柔性衬底3背离玻璃基板1的一侧表面保持平坦,方便后续制作薄膜晶体管器件。此外,流平层5相当于增加了柔性衬底3的厚度,其材料可以选择聚酰亚胺,也可以选择其他的有机平坦化材料。
需要说明的是,制作流平层5以后,在形成薄膜晶体管结构时,薄膜晶体管的源漏极需要穿过流平层5后与导电层41接触。
步骤S4:在柔性衬底3上形成与连接过孔31对一一对应的薄膜晶体管器件,其中,薄膜晶体管器件的漏电极12与一个导电层41电连接,薄膜晶体管器件的辅助走线13与另一个导电层41电连接。
本实施例所提供制作方法的先在柔性衬底3第一侧制作薄膜晶体管结构后在柔性衬底3基板第二侧制作Micro LED17,此处的薄膜晶体管结构可以包括薄膜晶体管器件以及用于驱动薄膜晶体管器件的驱动结构。在步骤S4中,即开始在柔性衬底3背离玻璃基板1的一侧形成薄膜晶体管器件。上述薄膜晶体管器件与导电层41的连接关系是最终实现薄膜晶体管器件与Micro LED17实现电路导通的基础。
其具体过程为首先在流平层5上形成缓冲层6得到如图10所示的结构,再依次形成半导体有源层7得到如图11所示的结构,形成栅极绝缘层8得到如图12所示的结构,形成栅极9得到如图13所示的结构,形成层间介电层10得到如图14所示的结构,形成过孔得到如图15所示的结构,形成源电极11、漏电极12、辅助走线13得到如图16所示的结构,至此,薄膜晶体管器件制作完成。
步骤S5:在薄膜晶体管器件背离柔性衬底3一侧形成与薄膜晶体管器件的源电极11电连接的驱动芯片16。
在步骤S5中,驱动芯片16用于为薄膜晶体管器件的工作提供驱动力。如图2所示,步骤S5在薄膜晶体管器件背离柔性衬底3一侧形成与薄膜晶体管器件的源电极11电连接的驱动芯片16包括:
步骤S51:在薄膜晶体管器件背离柔性衬底3一侧的表面形成平坦层14,得到如图17所示的结构;平坦层14极大提高了薄膜晶体管器件该表面的平整度,方便后续设置驱动芯片16。
步骤S52:在平坦层14上形成焊接过孔151,设置有源电极11的一层还具有与源电极11同作用的源电极同层走线,此处的焊接过孔151自平坦层14的表面抵达薄膜晶体管器件上的源电极11或源电极同层走线,方便驱动芯片16通过该焊接过孔151与薄膜晶体管器件的源电极11或与源电极同层走线实现电连接。如图18所示的结构中焊接过孔151与源电极11位置对应,驱动芯片16通过该焊接过孔151与源电极11实现电连接。
步骤S53:在平坦层14上沉积金属层形成芯片焊盘15,金属层的至少一部分位于焊接过孔151内以用于与所述源电极11电连接;金属层可以直接与源电极电连接(如图19所示),金属层还可以直接与源电极同层走线电连接,进而实现与源电极11的电连接。位于焊接过孔151内的金属层与薄膜晶体管器件的源电极11或与源电极11等作用的源电极同层走线连接,位于平坦层14表面的金属层形成的芯片焊盘15用于设置驱动芯片16。此处,金属层用于导通驱动芯片16和薄膜晶体管器件的源电极11与源电极11等作用的源电极同层走线。
步骤S54:在芯片焊盘15上焊接驱动芯片16,得到如图19所示的结构。
至此,薄膜晶体管结构的制作完成,下一步需要在柔性衬底3背离薄膜晶体管结构的第二侧形成Micro LED17。
步骤S6:分离柔性衬底3和牺牲层2,如图20所示。
因此,在步骤S6中,将柔性衬底3与牺牲层2分离,剥离了牺牲层2和玻璃衬底,此时,柔性衬底3背离薄膜晶体管结构的第二侧裸露,沉积于连接过孔31内的导电层41也暴露在柔性衬底3的第二侧表面。
步骤S7:在柔性衬底3背离薄膜晶体管器件的表面形成与导电层41电连接的MicroLED17,得到如图21所示的结构。
在步骤S7中,翻转如图20剥离掉剥离基板1和牺牲层2之后的结构,然后直接通过在柔性衬底3背离薄膜晶体管器件的第二侧形成Micro LED17,Micro LED17与裸露于柔性衬底3背离薄膜晶体管器件第二侧的导电层41接触,至此,柔性衬底3两侧的Micro LED17与薄膜晶体管结构实现了电路导通。
具体地,如图3所示,步骤S7在柔性衬底3背离薄膜晶体管器件的表面形成与导电层41电连接的Micro LED17包括:
步骤S71:将Micro LED17与柔性衬底3背离薄膜晶体管器件的表面对接;
步骤S72:将Micro LED17转移到柔性衬底3上。
通过上述步骤,完成了Micro LED17制作,整个显示面板制作完成,最终得到的显示面板结构如图21所示。
综上,本发明实施例提供的上述制作方法制备的显示面板中,柔性衬底3能够保护整个背板结构,设置于柔性衬底3上的连接过孔31对连通了柔性衬底3的两侧,薄膜晶体管结构和Micro LED17通过连接过孔31内的导电层41实现电路导通;导电层41受到热胀冷缩的影响较小,同时柔性衬底3能够进一步保护导电层41不受温度影响,牺牲层2的存在则规避了剥离过程中金属断裂的可能,有利于实现显示面板双面背板的成型,对于窄边框或无边框拼接显示具有重要的意义。
基于同样的发明思路,本发明实施例还提供一种显示面板,如图21所示,该显示面板包括:
柔性衬底3,柔性衬底3具有连接过孔对,每一个连接过孔对包括两个连接过孔31;柔性衬底3的第一侧形成有与连接过孔31一一对应的导电层41,每一对相互对应的导电层41和连接过孔31中,导电层41至少一部分位于连接过孔31内;
设置于柔性衬底3具有导电层41一侧且与连接过孔对一一对应的薄膜晶体管器件,薄膜晶体管器件的漏电极12与一个导电层41连接,薄膜晶体管器件的辅助走线13与另一个导电层41连接;
设置于薄膜晶体管器件背离柔性衬底3一侧的驱动芯片16,驱动芯片16与薄膜晶体管的源极连接;
设置于柔性衬底3背离导电层41一侧的Micro LED17,Micro LED17与连接过孔31对一一对应。
其中,柔性衬底3的第一侧还具有与薄膜晶体管器件的半导体有源层7对应的遮光层42,使得半导体有源层7在柔性衬底3上的投影落在遮光层42在柔性衬底3上的投影内。该遮光层42与导电层41同时通过在柔性衬底3第一侧沉积金属后进行构图形成,用于保护半导体有源层7不被Micro LED17照射。
并且,柔性衬底3与所述薄膜晶体管器件之间具有流平层5,方便薄膜晶体管器件的制作。
此外,本实施例中驱动芯片16通过芯片焊盘15与薄膜晶体管器件的源电极11连接。具体地,现在薄膜晶体管器件背离柔性衬底3的一侧设置与薄膜晶体管器件的源电极11电连接的芯片焊盘15,再将驱动芯片16焊接在芯片焊盘15上。
该显示面板通过上述制作方法制作,结构中的柔性衬底3能够保护整个背板结构,设置于柔性衬底3上的连接过孔31对连通了柔性衬底3的两侧,薄膜晶体管结构和MicroLED17通过连接过孔31内的导电层41实现电路导通;导电层41受到热胀冷缩的影响较小,同时柔性衬底3能够进一步保护导电层41不受温度影响,牺牲层2的存在则规避了剥离过程中金属断裂的可能,有利于实现显示面板双面背板的成型,对于窄边框或无边框拼接显示具有重要的意义。
显然,本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种显示面板的制作方法,其特征在于,包括:
在玻璃基板一侧表面依次形成牺牲层和柔性衬底;
在所述柔性衬底上形成用于与Micro LED一一对应的连接过孔对,每一个所述连接过孔对包括两个连接过孔;
在所述柔性衬底上形成金属层,并通过构图工艺形成导电层图案,所述导电层图案具有与所述连接过孔一一对应的导电层;每一对相互对应的所述导电层和所述连接过孔中,所述导电层的至少一部分位于所述连接过孔内;
在所述柔性衬底上形成与所述连接过孔对一一对应的薄膜晶体管器件,其中,所述薄膜晶体管器件的漏电极与一个所述导电层电连接,所述薄膜晶体管器件的辅助走线与另一个所述导电层电连接;
在所述薄膜晶体管器件背离所述柔性衬底一侧形成与所述薄膜晶体管器件的源电极电连接的驱动芯片;
分离所述柔性衬底和所述牺牲层;
在所述柔性衬底背离所述薄膜晶体管器件的表面形成与所述导电层电连接的MicroLED。
2.根据权利要求1所述的制作方法,其特征在于,所述在所述柔性衬底上形成过孔包括:
在所述柔性衬底上通过干刻工艺形成连接过孔。
3.根据权利要求2所述的制作方法,其特征在于,所述导电层图案还包括形成于所述柔性衬底表面与所述薄膜晶体管的半导体有源层对应的遮光层,所述半导体有源层在所述柔性衬底上的投影落在所述遮光层在所述柔性衬底上的投影内。
4.根据权利要求3所述的制作方法,其特征在于,所述在所述薄膜晶体管器件背离所述柔性衬底一侧形成与所述薄膜晶体管器件的源电极电连接的驱动芯片包括:
在所述薄膜晶体管器件背离所述柔性衬底一侧的表面形成平坦层;
在所述平坦层上形成焊接过孔;
在所述平坦层上沉积金属层形成芯片焊盘,所述金属层的至少一部分位于所述焊接过孔内以用于与所述源电极电连接;
在所述芯片焊盘上焊接所述驱动芯片。
5.根据权利要求1所述的制作方法,其特征在于,在所述柔性衬底上形成薄膜晶体管器件之前,还包括:
在所述柔性衬底表面形成流平层。
6.根据权利要求1所述的制作方法,其特征在于,所述在所述柔性衬底背离所述薄膜晶体管器件的表面形成与所述导电层电连接的Micro LED包括:
将所述Micro LED与所述柔性衬底背离所述薄膜晶体管器件的表面对接;
将所述Micro LED转移到所述柔性衬底上。
7.一种显示面板,其特征在于,包括:
柔性衬底,所述柔性衬底具有连接过孔对,每一个所述连接过孔对包括两个连接过孔;所述柔性衬底的第一侧形成有与所述连接过孔一一对应的导电层,每一对相互对应的所述导电层和所述连接过孔中,所述导电层至少一部分位于所述连接过孔内;
设置于所述柔性衬底具有所述导电层一侧且与所述连接过孔对一一对应的薄膜晶体管器件,所述薄膜晶体管器件的漏电极与一个所述导电层连接,所述薄膜晶体管器件的辅助走线与另一个所述导电层连接;
设置于所述薄膜晶体管器件背离所述柔性衬底一侧的驱动芯片,所述驱动芯片与所述薄膜晶体管器件的源极连接;
设置于所述柔性衬底背离所述导电层一侧的Micro LED,所述Micro LED与所述连接过孔对一一对应。
8.根据权利要求7所述的显示面板,其特征在于,还包括遮光层,所述遮光层形成于所述柔性衬底具有所述导电层的一侧且与所述薄膜晶体管器件的半导体有源层对应,使得所述半导体有源层在所述柔性衬底上的投影落在所述遮光层在所述柔性衬底上的投影内。
9.根据权利要求7所述的显示面板,其特征在于,所述柔性衬底与所述薄膜晶体管器件之间具有流平层。
10.根据权利要求7所述的显示面板,其特征在于,所述驱动芯片通过芯片焊盘与所述薄膜晶体管器件的源极连接。
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