CN110085520B - 薄膜电晶体及其制作方法 - Google Patents
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Abstract
一种薄膜电晶体和其制作方法，包括：在一补底基板形成栅级层、绝缘层、非晶硅层、金属层、铜导线层以及光阻层。在制作有源层之前先对所述光阻层进行干刻蚀，形成一底部为所述铜导线层之沟道，同时使所述光阻层之边缘与所述金属层之边缘切齐，防止所述光阻层阻碍刻蚀气体对所述有源层刻蚀，提高了薄膜电晶体之开口率以及良率。在所述沟道处形成一氧化保护层，防止所述铜导线层与刻蚀气体反应形成化合物，使得后续能够得到较干净的沟道，提高了薄膜电晶体之良率。
Description
技术领域
本发明涉及一种显示领域技术，尤其涉及一种薄膜电晶体及其制作方法。
背景技术
随着显示技术领域的进步，人们对于液晶显示器(Liquid Crystal Display,LCD)以及有机发光二级体(Organic Light Emitting Diode,OLED)等平板显示器的要求也越来越高，显示面板为LCD及OLED的重要组成部份，以LCD为例，通常具有一薄膜电电晶体(ThinFilm Transistor,TFT)及一彩色滤光片(Color Filter,CF)及两基板中间的液晶层(Liquid Crystal Layer)所组成，其工作原理是通过在TFT基板以及CF基板上施加电压来改变液晶层中液晶分子的旋转方向将背光模组的光线折射出来产生画面。
现有技术中，TFT基板主要的组成为栅电极层、绝缘层、有源层、源漏极层以及像素电极层，其中，在制作所述有源层的过程中会运用到干刻蚀工艺对所述有源层之材料非晶硅层进行刻蚀，如图1所示，此时向外突出的光阻层20会阻碍干刻蚀气体对非晶硅层21进行刻蚀，使刻蚀过后之所述非晶硅层21同样向外凸出，导致寄生电容产生在所述非晶硅层21上，降低了TFT的良率。
发明内容
鉴于现有技术的不足，本发明揭露了一种TFT和一种TFT的制备方法，在对非晶硅层进行干刻蚀前，先对光阻层进行刻蚀，降低所述光阻层整体厚度，并使所述光阻层边缘和铜导线层边缘距离减小，使所述非晶硅层在被刻蚀时不会被光阻所阻挡，避免产生寄生电容，提升了TFT的品质。
具体方法如下：
一种TFT的制作方法，包括：在一衬底基板上设置栅极层、绝缘层、非晶硅层、金属层、铜导线层及光阻层；对第一区域外之所述衬底基板进行第一次湿刻蚀，将第一区域外之所述金属层及所述铜导线层刻蚀；对所述衬底基板进行第一次干刻蚀，将所述光阻层刻蚀，使整体所述光阻层变薄，并在所述第一区域内形成一底部为所述铜导线层之沟道；在所述沟道形成一氧化保护层；对所述衬底基板进行第二次干刻蚀，将所述非晶硅层刻蚀，形成有源层；对所述衬底基板进行第二次湿刻蚀，将所述第一区域内之所述氧化薄膜层、所述铜导线层和所述金属层进行刻蚀，形成源漏极层。
其中，所述金属层之材料可选为Mo、Ti、MoTi、MoTa、MoNb、MoW。
其中，所述沟道之所述氧化保护层制作方式为等离子氧化法或将所述沟道处的所述铜导线层加热至至少200摄氏度后，再通过压缩空气冷却。
其中，在第一次干刻蚀后，所述光阻层之边缘与所述铜导线层之边缘切齐。
其中，所述第一次湿刻蚀使用之刻蚀液体为铜酸刻蚀剂。
其中，所述第二次湿刻蚀使用之刻蚀液体为铜酸刻蚀剂。
其中，所述第二次干刻蚀使用之刻干刻蚀气体包括O2，Cl2以及NF3、SF6、CHF3、CF4之其中一种或两种以上。
为了解决上述问题，本发明还提供一种TFT，包括：
一衬底基板；
一栅电极，位于所述衬底基板上；
一绝缘层，位于所述栅电极上；
一有源层，位于所述绝缘层上；
一源极/漏极，位于所述有源层之上，所述源极和所述漏极之间存在一沟道；
其中，所述沟道底部表面为干净的所述有源层，无其他金属或金属化合物残留。
其中，所述有源层之一边缘与所述源极之外边缘切齐；所述有源层之另一边缘与所述漏极之外边缘切齐。
本发明之有益效果为：本发明提供的TFT和TFT的制作方法，在制作有源层的过程前，先对光阻层进行干刻蚀，形成一底部为铜导线层的沟道。此时，所述光阻层边缘与所述铜导线边缘切齐，避免了所述光阻层之凸出边缘阻碍了第二次干刻蚀气体对非晶硅层进行刻蚀之情形，减少寄生电容的产生，提高了TFT之开口率和良率，本发明还另外新增一道制程，在所述沟道处形成一氧化保护层，避免所述铜导线层与第二次干刻蚀气体反应形成化合物，从而导致制作源漏极时，出现刻蚀不完全的情况，进一步提升了TFT之品质。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中，制作薄膜电晶体之有源层的结构示意图。
图2为本发明实施例中，薄膜电晶体的制作方法的工艺流程图。
图3为本发明实施例中，薄膜电晶体制备方法的步骤S1所得到之器件的结构示意图。
图4为本发明实施例中，薄膜电晶体制备方法的步骤S2所得到之器件的结构示意图。
图5为本发明实施例中，薄膜电晶体制备方法的步骤S3所得到之器件的结构示意图。
图6为本发明实施例中，薄膜电晶体制备方法的步骤S4所得到之器件的结构示意图。
图7为本发明实施例中，薄膜电晶体制备方法的步骤S5所得到之器件的结构示意图。
图8为本发明实施例中，薄膜电晶体制备方法的步骤S6所得到之器件的结构示意图。
图9为本发明实施例提供的薄膜电晶体的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述，在以下实施例中，在不同的图中，相同部份是以相同标号表示。
本发明发明一种TFT和一种TFT的制作方法，用以解决制作有源层的过程中，非晶硅层因光阻凸出保护而导致刻蚀不完全，从而产生寄生电容的技术问题。
所述TFT的制作方法的工艺流程图如图2所示。
所述方法包括：
S1、如图3所示，在一衬底基板(图未标示)上依序制作栅电极层(图未标示)、绝缘层(图未标示)、非晶硅层10、金属层11、铜导线层12及光阻层13；
S2、如图4所示，对所述衬底基板(图未标示)进行第一次湿刻蚀，将第一区域100外之所述金属层11及所述铜导线层12刻蚀；
S3、如图5所示，对所述衬底基板(图未标示)进行第一次干刻蚀，将所述光阻层13刻蚀，使整体所述光阻层13变薄，在所述第一区域100内形成一底部为所述铜导线层12之沟道，并使所述光阻层13之边缘与所述铜导线层12之边缘切齐；
S4、如图6所示，在所述沟道上形成一氧化保护层14；
S5、如图7所示，对所述衬底基板(图未标示)进行第二次干刻蚀，将所述第一区域100外之所述非晶硅层10进行刻蚀，形成有源层15，由于所述光阻层13之边缘与所述铜导线层12之边缘切齐，所述光阻层13不会阻碍刻蚀气体对非晶硅层10进行刻蚀，因此所述有源层15之边缘能与所述金属层11之边缘切齐，避免了寄生电容的产生，从而提高了TFT的开口率以及良率；
S6、如图8所示，对所述衬底基板(图未标示)进行第二次湿刻蚀，对所述第一区域100内之所述所述氧化保护层14、所述铜导线层12以及所述金属层11进行刻蚀，形成源漏极16，由于所述氧化保护层14隔绝了所述铜导线层12与所述第二次干刻蚀之刻蚀气体接触，因此没有化合物形成在所述第一区域100内之所述铜导线层12上，之后在进行所述第二次湿刻蚀时，能够得到较干净的沟道，提升了TFT的生产良率。
具体地，所述金属层11之材料为Mo。
具体地，所述沟道之所述氧化保护层制作方式为等离子氧化法。
具体地，在第一次干刻蚀后，所述光阻层13之边缘与所述铜导线层12之边缘切齐。
具体地，所述第一次湿刻蚀使用之刻蚀液体为铜酸刻蚀剂。
具体地，所述第二次湿刻蚀使用之刻蚀液体为铜酸刻蚀剂。
具体地，所述第二次干刻蚀使用之刻蚀气体包括O2，Cl2以及NF3、SF6、CHF3、CF4之其中一种或两种以上。
如图9所示，本发明还提供一种TFT，包括：
一衬底基板30；
一栅电极31，位于所述衬底基板30上；
一绝缘层32，位于所述栅电极31上；
一有源层33，位于所述绝缘层32上；
一源极34/漏极35，位于所述有源层33之上，所述源极34和所述漏极35之间存在一沟道36。
具体地，所述沟道36底部表面为干净的所述有源层33，即所述沟道36上无其他金属或金属化合物残留。
具体地，所述有源层33之一边缘与所述源极34之外边缘切齐；所述有源层33之另一边缘与所述漏极35之外边缘切齐。
有益效果为：本发明所提供之TFT，在源极和漏极之间的沟道处表面处无其他金属或金属化合物残留，提升了TFT的良率，另外，所述有源层之两边缘分别与所述源极和所述漏极之外侧边缘切齐，降低了寄生电容产生在有缘层边缘的数量，进一步提升了TFT的品质。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
Claims (8)
1.一种薄膜电晶体的制作方法，所述方法包括：
步骤1、在一衬底基板上设置栅极层、绝缘层、非晶硅层、金属层、铜导线层及光阻层；
步骤2、对第一区域外之所述铜导线层及所述金属层进行湿刻蚀；
步骤3、对所述光阻层进行干刻蚀，形成一底部为所述铜导线层之沟道，并在所述沟道处形成一氧化保护层；
步骤4、对所述非晶硅层进行干刻蚀，形成有源层；
步骤5、对所述沟道处之所述氧化保护层、所述铜导线层和所述金属层进行湿刻蚀，形成源漏极；
其中，步骤3之所述光阻层刻蚀后之边缘与所述铜导线层之边缘切齐。
2.根据权利要求1所述之薄膜电晶体的制作方法，其中，步骤1之所述金属层之材料可选为Mo、Ti、MoTi、MoTa、MoNb或MoW。
3.根据权利要求1所述之薄膜电晶体的制作方法，其中，步骤2、5之刻蚀液体包括铜酸刻蚀剂。
4.根据权利要求1所述之薄膜电晶体的制作方法，其中，步骤4之刻蚀气体包括O2，Cl2以及NF3、SF6、CHF3、CF4之其中一种或两种以上。
5.根据权利要求1所述之薄膜电晶体的制作方法，其中，所述氧化保护层的形成方式为：以等离子氧化法处理所述铜导线层表面。
6.根据权利要求1所述之薄膜电晶体的制作方法，其中，所述氧化保护层的形成方式为：将所述沟道处的所述铜导线层加热至至少200摄氏度，再通过压缩空气冷却。
7.一种根据权利要求1所述的方法制作的薄膜电晶体，包括：一衬底基板；
一栅电极，位于所述衬底基板上；
一绝缘层，位于所述栅电极上；
一有源层，位于所述绝缘层上；
一源极/漏极，位于所述有源层之上，所述源极和所述漏极之间存在一沟道；
其中，所述沟道底部表面为干净的所述有源层，无其他金属或金属化合物残留。
8.根据权利要求7所述之薄膜电晶体，其中，所述有源层之一边缘与所述源极之外边缘切齐，所述有源层之另一边缘与所述漏极之外边缘切齐。
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