CN110047989B - 发光装置 - Google Patents
发光装置 Download PDFInfo
- Publication number
- CN110047989B CN110047989B CN201910034676.5A CN201910034676A CN110047989B CN 110047989 B CN110047989 B CN 110047989B CN 201910034676 A CN201910034676 A CN 201910034676A CN 110047989 B CN110047989 B CN 110047989B
- Authority
- CN
- China
- Prior art keywords
- light
- wavelength conversion
- side surfaces
- emitting device
- transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-005085 | 2018-01-16 | ||
| JP2018005085A JP7083647B2 (ja) | 2018-01-16 | 2018-01-16 | 発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110047989A CN110047989A (zh) | 2019-07-23 |
| CN110047989B true CN110047989B (zh) | 2024-05-28 |
Family
ID=65033423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910034676.5A Active CN110047989B (zh) | 2018-01-16 | 2019-01-15 | 发光装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10937770B2 (https=) |
| EP (1) | EP3511981B1 (https=) |
| JP (1) | JP7083647B2 (https=) |
| CN (1) | CN110047989B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102019104978B4 (de) * | 2019-02-27 | 2024-03-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauteil mit homogenisierter leuchtfläche |
| US12199218B2 (en) | 2019-03-14 | 2025-01-14 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
| JP6793899B1 (ja) | 2019-11-14 | 2020-12-02 | ヌヴォトンテクノロジージャパン株式会社 | 発光装置 |
| EP3905316B1 (en) * | 2019-11-14 | 2023-08-30 | Nuvoton Technology Corporation Japan | Light-emitting device |
| JP7108196B2 (ja) * | 2019-12-26 | 2022-07-28 | 日亜化学工業株式会社 | 発光装置、波長変換部材の製造方法及び発光装置の製造方法 |
| KR102919988B1 (ko) * | 2020-03-17 | 2026-01-29 | 엘지이노텍 주식회사 | 조명 모듈 및 이를 구비한 조명 장치 |
| JP7328568B2 (ja) | 2021-06-30 | 2023-08-17 | 日亜化学工業株式会社 | 光源、光源装置及び光源の製造方法 |
| EP4270483A1 (en) * | 2022-04-28 | 2023-11-01 | Nichia Corporation | Light-emitting device and manufacturing method thereof |
| CN117438518A (zh) * | 2022-07-21 | 2024-01-23 | 光宝科技股份有限公司 | 显示装置、其制造方法及形成其的制造设备 |
| JP7575704B2 (ja) * | 2022-07-21 | 2024-10-30 | 日亜化学工業株式会社 | 発光装置 |
| EP4310912A1 (en) * | 2022-07-21 | 2024-01-24 | Nichia Corporation | Light-emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637802A (zh) * | 2011-02-14 | 2012-08-15 | 斯坦雷电气株式会社 | 发光装置及其制造方法 |
| CN103378269A (zh) * | 2012-04-23 | 2013-10-30 | 日亚化学工业株式会社 | 发光装置 |
| JP2015026753A (ja) * | 2013-07-29 | 2015-02-05 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
| JP2017228600A (ja) * | 2016-06-21 | 2017-12-28 | スタンレー電気株式会社 | 半導体発光装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009005907A1 (de) * | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| JP5736203B2 (ja) * | 2011-03-22 | 2015-06-17 | スタンレー電気株式会社 | 発光装置 |
| JP6164038B2 (ja) * | 2013-10-16 | 2017-07-19 | 豊田合成株式会社 | 発光装置 |
| JP6187277B2 (ja) | 2014-01-21 | 2017-08-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
| JP6477001B2 (ja) * | 2014-03-14 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| TWI722925B (zh) | 2014-12-08 | 2021-03-21 | 荷蘭商露明控股公司 | 波長轉換半導體發光裝置 |
| JP2017059756A (ja) | 2015-09-18 | 2017-03-23 | シチズン時計株式会社 | 発光装置 |
| EP3174110B1 (en) * | 2015-11-30 | 2020-12-23 | Nichia Corporation | Light emitting device |
| JP6399017B2 (ja) * | 2016-02-29 | 2018-10-03 | 日亜化学工業株式会社 | 発光装置 |
| JP6638578B2 (ja) | 2016-06-30 | 2020-01-29 | 日亜化学工業株式会社 | シート成形体の製造方法、及びそれを用いた発光装置の製造方法 |
-
2018
- 2018-01-16 JP JP2018005085A patent/JP7083647B2/ja active Active
-
2019
- 2019-01-15 EP EP19151930.5A patent/EP3511981B1/en active Active
- 2019-01-15 CN CN201910034676.5A patent/CN110047989B/zh active Active
- 2019-01-16 US US16/248,820 patent/US10937770B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637802A (zh) * | 2011-02-14 | 2012-08-15 | 斯坦雷电气株式会社 | 发光装置及其制造方法 |
| CN103378269A (zh) * | 2012-04-23 | 2013-10-30 | 日亚化学工业株式会社 | 发光装置 |
| JP2015026753A (ja) * | 2013-07-29 | 2015-02-05 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
| JP2017228600A (ja) * | 2016-06-21 | 2017-12-28 | スタンレー電気株式会社 | 半導体発光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190221550A1 (en) | 2019-07-18 |
| US10937770B2 (en) | 2021-03-02 |
| EP3511981A1 (en) | 2019-07-17 |
| EP3511981B1 (en) | 2020-08-19 |
| JP7083647B2 (ja) | 2022-06-13 |
| JP2019125690A (ja) | 2019-07-25 |
| CN110047989A (zh) | 2019-07-23 |
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| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |