CN110010570A - A kind of radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation - Google Patents
A kind of radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation Download PDFInfo
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- CN110010570A CN110010570A CN201811593351.2A CN201811593351A CN110010570A CN 110010570 A CN110010570 A CN 110010570A CN 201811593351 A CN201811593351 A CN 201811593351A CN 110010570 A CN110010570 A CN 110010570A
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- radio frequency
- tsv
- cavity
- pinboard
- frequency chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The invention discloses a kind of radio frequency microsystem assembly manufacture crafts of liquid-immersed heat dissipation, comprising the following steps: TSV, pad are made on radio frequency chip pinboard；Radio frequency chip switching back, which is thinned, exposes TSV, does passivation layer on the top TSV of exposing, exposes TSV metal by CMP process；Cavity is made on radio frequency chip pinboard；In radio frequency chip embedment cavity, being RDL interconnects radio frequency chip with the top TSV；Heat dissipation microchannel cavity is done in radio frequency chip switching back；Pad and cavity are done below top cover pinboard；In radiator switching plate surface production TSV and pad；Top cover pinboard, radio frequency chip pinboard and radiator pinboard are bonded together to form mould group by wafer scale bonding technology, top cover pinboard cavity is connected feed liquor and liquid outlet with radiator pinboard cavity, heat sinking function is completed and realizes.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of video microsystem assembly production of liquid-immersed heat dissipation
Technique.
Background technique
Microwave and millimeter wave RF IC technology is the basis of modern national defense weaponry and Internet industry, with intelligence
The rapid rising of " internet+" economy such as energy communication, smart home, Intelligent logistics, intelligent transportation, undertakes data access and transmission
There is also huge current demand and potential markets for the microwave and millimeter wave RF IC of function.
But for high-frequency micro-system, the area of aerial array is smaller and smaller, and the distance between antenna will be kept
In some particular range, entire mould group can just be made to have excellent communication capacity.For radio frequency chip analog device chip,
Its area cannot be as digit chip at the diminution of multiplying power, it may appear that the radio frequency micro-system of very high frequency will be without enough faces
It accumulates while placing PA/LNA, need radio frequency chip to stack and place, so that traditional wind-cooling heat dissipating mode, which is not able to satisfy gradually, to be needed
It asks.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation,
By the way that liquid cooling heat radiator is arranged in the top and bottom of radio frequency chip, refrigerant liquid is set to pass through simultaneously in the upper and lower surface of chip, energy
Greatly increase the heat-sinking capability of chip.
In order to solve the above technical problems, the present invention adopts the following technical scheme that:
A kind of radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation, comprising the following steps:
TSV, pad are made on radio frequency chip pinboard；Radio frequency chip switching back, which is thinned, exposes TSV,
Passivation layer is done on the top TSV of exposing, exposes TSV metal by CMP process；Cavity is made on radio frequency chip pinboard；
In radio frequency chip embedment cavity, being RDL interconnects radio frequency chip with the top TSV；In radio frequency chip switching backboard
Do heat dissipation microchannel cavity in face；
Pad and cavity are done below top cover pinboard；In radiator switching plate surface production TSV and pad；
Top cover pinboard, radio frequency chip pinboard and radiator pinboard are bonded together by wafer scale bonding technology
Mould group is formed, top cover pinboard cavity is connected feed liquor and liquid outlet with radiator pinboard cavity, heat sinking function is completed and realizes.
Preferably, described that TSV, pad are made on radio frequency chip pinboard；Radio frequency chip switching back, which is thinned, to be made
TSV exposes, and does passivation layer on the top TSV of exposing, exposes TSV metal by CMP process；On radio frequency chip pinboard
Make cavity specifically:
By photoetching, etching technics makes the hole TSV in radio frequency chip switching plate surface；In silicon wafer disposed thereon silica or
Person's silicon nitride dielectric layer or directly thermal oxidation；By physical sputtering, magnetron sputtering or evaporation process are just made on the insulating layer
Make seed layer；
Electro-coppering makes copper metal be full of TSV, and densification keeps copper finer and close at a temperature of 200 to 500 degree；Copper CMP technique makes silicon
Copper removal in piece surface makes silicon chip surface only be left to fill out copper；
By photoetching, electroplating technology makes pad in radio frequency chip switching plate surface；
Radio frequency chip pinboard do not make smithcraft carry out on one side it is thinned, by grinding, wet etching and dry
The technique of method etching exposes the copper post other end；Insulating layer is covered on the copper post surface of exposing；By photoetching, etching technics is exhausted
The windowing of edge layer surface, exposes copper post after windowing；
Make cavity in TSV opening wheat flour；
Cavity etches into the lower end of TSV, exposes TSV, and the copper post in TSV is made by dry or wet etch technique
Expose.
Preferably, described in radio frequency chip embedment cavity, being RDL interconnects chip with the top TSV；Turn in radio frequency chip
Do heat dissipation microchannel cavity in the fishplate bar back side specifically:
Bottom is embedded in cavity with the radio frequency chip of solder, heating makes chip with cavity bottom metal interconnection；It does
RDL interconnects chip with the top TSV；
Heat dissipation microchannel cavity is done in switching back by lithography and etching technique；Cavity bottom with chip bottom away from
From between 1um to 100um；Or
Heat dissipation microchannel cavity is done in switching back, TSV can be bypassed in cavity herein, TSV is made to be arranged in cavity
Outside；Or TSV is made to be arranged in cavity inside.
It is preferably, described to do pad and cavity below top cover pinboard specifically:
By photoetching and electroplating technology, pad is done below top cover pinboard；Turned by lithography and etching technique in top cover
Cavity is done below fishplate bar.
It is preferably, described in radiator switching plate surface production TSV and pad specifically:
TSV is made in radiator switching plate surface, bore dia range is arrived in 1um to 1000um, depth in 10um
1000um；In silicon wafer disposed thereon silica, perhaps the insulating layers such as silicon nitride or directly thermal oxidation, thickness of insulating layer range exist
Between 10nm to 100um；By physical sputtering, magnetron sputtering or evaporation process just make seed layer, seed on the insulating layer
Layer thickness range is one or more layers, metal material is titanium, copper, aluminium, silver, palladium, gold, thallium, tin or nickel in 1nm to 100um；
Electro-coppering makes copper metal be full of TSV, and densification keeps copper finer and close at a temperature of 200 to 500 degree；Copper CMP technique makes silicon
Copper removal in piece surface makes silicon chip surface only be left to fill out copper；
By photoetching, electroplating technology makes pad in radiator switching plate surface, and thickness range is in 1nm to 100um
One or more layers, metal material is titanium, copper, aluminium, silver, palladium, gold, thallium, tin or nickel.
Have following using the present invention the utility model has the advantages that a kind of radio frequency that provides liquid-immersed heat dissipation of the embodiment of the present invention is micro-
System component manufacture craft enables refrigerant liquid simultaneously in chip by the way that liquid cooling heat radiator is arranged in the top and bottom of radio frequency chip
Upper and lower surface pass through, the heat-sinking capability of chip can be greatly increased.
Detailed description of the invention
Fig. 1 a is that TSV is had in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention, weldering
The radio frequency chip pinboard sectional view of disk and cavity；
Fig. 1 b is that radio frequency core is embedded in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention
The radio frequency chip pinboard cross-sectional view of piece；
Fig. 1 c is that heat dissipation is opened in bottom in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention
The radio frequency chip pinboard sectional view of microchannel cavity；
Fig. 1 d is that pad is had in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention, empty
The top cover pinboard sectional view of chamber, TSV and pad；
Fig. 1 e be in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention with TSV and
The radiator of pad converts sectional view；
Fig. 1 f passes through wafer scale in the radio frequency microsystem assembly manufacture craft for the liquid-immersed heat dissipation of the embodiment of the present invention
Bonding technology is bonded together top cover pinboard, radio frequency chip pinboard and radiator pinboard to form mould group；Pass through dry method
Etching or mechanical cutting processes are cut into wafer scale mould group the sectional view of single module；
Fig. 2 a is that heat dissipation is opened in bottom in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention
The radio frequency chip pinboard sectional view of microchannel cavity；
Fig. 2 b is that heat dissipation is opened in bottom in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention
The radio frequency chip pinboard sectional view of microchannel cavity；
Fig. 2 c be in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention with TSV and
The radiator pinboard sectional view of pad；
Fig. 2 d is logical with miniflow in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention
The stacking mould group sectional view of road heat dissipation；
Mould group is stacked in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of Fig. 2 e embodiment of the present invention along micro-
The sectional view in circulation road direction；
Fig. 2 f is that mould group edge is stacked in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention
The sectional view of radio frequency chip bottom direction；
Fig. 2 g is that mould group edge is stacked in the radio frequency microsystem assembly manufacture craft of the liquid-immersed heat dissipation of the embodiment of the present invention
The sectional view of radio frequency chip top-direction.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
In addition, duplicate label or mark may be used in various embodiments.These are repeated only for simple clear
The ground narration present invention, not representing has any relevance between the different embodiments and/or structure discussed.
The label about step mentioned in the embodiments of the present invention, it is only for the convenience of description, and do not have
There is the connection of substantial sequencing.Different step in each specific embodiment can carry out the combination of different sequencings,
Realize goal of the invention of the invention.
The embodiment of the invention discloses a kind of radio frequency microsystem assembly manufacture crafts of liquid-immersed heat dissipation, including following step
It is rapid:
TSV, pad are made on radio frequency chip pinboard；Radio frequency chip switching back, which is thinned, exposes TSV,
Passivation layer is done on the top TSV of exposing, exposes TSV metal by CMP process；Cavity is made on radio frequency chip pinboard；
In radio frequency chip embedment cavity, being RDL interconnects radio frequency chip with the top TSV；In radio frequency chip switching backboard
Do heat dissipation microchannel cavity in face；
Pad and cavity are done below top cover pinboard；In radiator switching plate surface production TSV and pad；
Top cover pinboard, radio frequency chip pinboard and radiator pinboard are bonded together by wafer scale bonding technology
Mould group is formed, top cover pinboard cavity is connected feed liquor and liquid outlet with radiator pinboard cavity, heat sinking function is completed and realizes.
Specific embodiment includes:
A: TSV (passing through silicon wafer channel, Through Silicon Vias) weldering is made on radio frequency chip pinboard
Disk；Radio frequency chip switching back, which is thinned, exposes TSV, does passivation layer on the top TSV of exposing, (chemical machinery is thrown by CMP
Light, Chemical Mechanical Polishing) technique make TSV metal expose；It is empty that production is drawn on radio frequency chip pinboard
Chamber；
Specifically, as shown in Figure 1a, by photoetching, etching technics makes the hole TSV on 101 surface of radio frequency chip pinboard
104, bore dia range is in 1um to 1000um, and depth is in 10um to 1000um；In silicon wafer disposed thereon silica or silicon nitride
Equal insulating layers or directly thermal oxidation, thickness of insulating layer range is between 10nm to 100um；By physical sputtering, magnetic control splashes
It penetrates or evaporation process just makes seed layer on the insulating layer, seed layer thickness range can be one layer in 1nm to 100um
It is also possible to multilayer, metal material can be titanium, copper, aluminium, silver, palladium, gold, thallium, tin, nickel etc.；
Electro-coppering makes copper metal be full of TSV, and densification keeps copper finer and close at a temperature of 200 to 500 degree；Copper CMP technique makes silicon
Copper removal in piece surface makes silicon chip surface only be left to fill out copper；Silicon chip surface insulating layer can use dry etching or wet etching work
Skill removal；Silicon chip surface insulating layer can also retain；
By photoetching, electroplating technology makes pad 103 in radio frequency chip switching plate surface, and thickness range is arrived in 1nm
100um can be one layer and be also possible to multilayer, and metal material can be titanium, copper, aluminium, silver, palladium, gold, thallium, tin, nickel etc.；
Radio frequency chip pinboard do not make smithcraft carry out on one side it is thinned, by grinding, wet etching and dry
The technique of method etching exposes the copper post other end；Insulating layer is covered on the copper post surface of exposing, thickness of insulating layer range is in 10nm
To 1000um, material can be silica or silicon nitride；By photoetching, etching technics opens a window in surface of insulating layer, windowing
After expose copper post；
Make cavity 102 in TSV opening wheat flour, cavity size range is arrived in 1um to 10000um, depth in 10um
1000um；
Cavity etches into the lower end of TSV, exposes TSV, and the copper post in TSV is made by dry or wet etch technique
Expose；
B: in radio frequency chip embedment cavity, being RDL (re-wiring layer) interconnects chip with the top TSV；In pinboard
Do heat dissipation microchannel cavity in the back side；
As shown in Figure 1 b, bottom is embedded in cavity with the radio frequency chip 105 of solder, heating makes chip with cavity bottom
Portion's metal interconnection；Being RDL interconnects chip with the top TSV；
As illustrated in figure 1 c, heat dissipation microchannel cavity 106 is done in switching back by lithography and etching technique；Cavity bottom
Portion is with chip bottom distance between 1um to 100um；As shown in figure 2f, cavity is in the gap of TSV conductive column for its top view；
Can also be as shown in Figure 2 b, heat dissipation microchannel cavity is done in switching back, can be bypassed in cavity herein
TSV, is arranged in TSV outside cavity, and top view is as shown in Figure 2 g；TSV can also be made to be arranged in cavity inside；
C: pad and cavity are done below top cover pinboard；In radiator switching plate surface production TSV and pad；
As shown in Figure 1 d, by photoetching and electroplating technology, pad is done below top cover pinboard 201, thickness range is in 1nm
To 100um, it can be one layer and be also possible to multilayer, metal material can be titanium, copper, aluminium, silver, palladium, gold, thallium, tin, nickel etc.；
Cavity 107 is done below top cover pinboard by lithography and etching technique, cavity size range is arrived in 1um
10000um, depth is in 10um to 1000um；
As shown in fig. le, TSV is made in radiator switching plate surface, bore dia range exists in 1um to 1000um, depth
10um to 1000um；In silicon wafer disposed thereon the silica perhaps insulating layers such as silicon nitride or directly thermal oxidation, thickness of insulating layer
Range is between 10nm to 100um；By physical sputtering, magnetron sputtering or evaporation process just make seed on the insulating layer
Layer, seed layer thickness range can be one layer and are also possible to multilayer in 1nm to 100um, metal material can be titanium, copper,
Aluminium, silver, palladium, gold, thallium, tin, nickel etc.；
Electro-coppering makes copper metal be full of TSV, and densification keeps copper finer and close at a temperature of 200 to 500 degree；Copper CMP technique makes silicon
Copper removal in piece surface makes silicon chip surface only be left to fill out copper；Silicon chip surface insulating layer can use dry etching or wet etching work
Skill removal；Silicon chip surface insulating layer can also retain；
By photoetching, electroplating technology makes pad in radiator switching plate surface, thickness range in 1nm to 100um,
It can be one layer and be also possible to multilayer, metal material can be titanium, copper, aluminium, silver, palladium, gold, thallium, tin, nickel etc.；
D: top cover pinboard, radio frequency chip pinboard and radiator pinboard are bonded in one by wafer scale bonding technology
It rises and forms mould group, top cover pinboard cavity is connected feed liquor and liquid outlet with radiator pinboard cavity, it is real to complete heat sinking function
It is existing.
As shown in Figure 1 f, by wafer scale bonding technology top cover pinboard, radio frequency chip pinboard and radiator switching
Plate is bonded together to form mould group；Wafer scale mould group is cut into single module by dry etching or mechanical cutting processes；
As shown in Figure 2 e, top cover pinboard cavity is connected feed liquor and liquid outlet with radiator pinboard cavity, completes to dissipate
Hot merit is able to achieve.
It will be apparent to one skilled in the art that invention is not limited to the details of the above exemplary embodiments, and not
In the case where spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter from
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended right
It is required that rather than above description limit, it is intended that all changes that will be fallen within the meaning and scope of the equivalent elements of the claims
Change is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
It should be appreciated that exemplary embodiment as described herein is illustrative and be not restrictive.Although being retouched in conjunction with attached drawing
One or more embodiments of the invention is stated, it should be understood by one skilled in the art that not departing from through appended right
In the case where the spirit and scope of the present invention defined by it is required that, the change of various forms and details can be made.
Claims (5)
1. a kind of radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation, which comprises the following steps:
TSV, pad are made on radio frequency chip pinboard；Radio frequency chip switching back, which is thinned, exposes TSV, in exposing
TSV does passivation layer in top, exposes TSV metal by CMP process；Cavity is made on radio frequency chip pinboard；
In radio frequency chip embedment cavity, being RDL interconnects radio frequency chip with the top TSV；It is done in radio frequency chip switching back
Radiate microchannel cavity；
Pad and cavity are done below top cover pinboard；In radiator switching plate surface production TSV and pad；
Top cover pinboard, radio frequency chip pinboard and radiator pinboard are bonded together to be formed by wafer scale bonding technology
Top cover pinboard cavity is connected feed liquor and liquid outlet with radiator pinboard cavity by mould group, is completed heat sinking function and is realized.
2. the radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation as described in claim 1, which is characterized in that it is described
TSV, pad are made above radio frequency chip pinboard；Radio frequency chip switching back, which is thinned, exposes TSV, pushes up in the TSV of exposing
Passivation layer is done at end, exposes TSV metal by CMP process；Cavity is made on radio frequency chip pinboard specifically:
By photoetching, etching technics makes the hole TSV in radio frequency chip switching plate surface；In silicon wafer disposed thereon silica or nitrogen
SiClx insulating layer or directly thermal oxidation；By physical sputtering, magnetron sputtering or evaporation process just production kind on the insulating layer
Sublayer；
Electro-coppering makes copper metal be full of TSV, and densification keeps copper finer and close at a temperature of 200 to 500 degree；Copper CMP technique makes silicon chip surface
Copper removal makes silicon chip surface only be left to fill out copper；
By photoetching, electroplating technology makes pad in radio frequency chip switching plate surface；
Carry out on one side thinned what radio frequency chip pinboard did not make smithcraft, by grinding, wet etching and dry method are carved
The technique of erosion exposes the copper post other end；Insulating layer is covered on the copper post surface of exposing；By photoetching, etching technics is in insulating layer
Surface windowing, exposes copper post after windowing；
Make cavity in TSV opening wheat flour；
Cavity etches into the lower end of TSV, exposes TSV, exposes the copper post in TSV by dry or wet etch technique.
3. the radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation as claimed in claim 1 or 2, which is characterized in that institute
It states in radio frequency chip embedment cavity, being RDL interconnects chip with the top TSV；It is micro- that heat dissipation is done in radio frequency chip switching back
Circulation road cavity specifically:
Bottom is embedded in cavity with the radio frequency chip of solder, heating makes chip with cavity bottom metal interconnection；Being RDL makes
Chip is interconnected with the top TSV；
Heat dissipation microchannel cavity is done in switching back by lithography and etching technique；Cavity bottom exists with chip bottom distance
Between 1um to 100um；Or
Heat dissipation microchannel cavity is done in switching back, TSV can be bypassed in cavity herein, be arranged in TSV outside cavity；
Or TSV is made to be arranged in cavity inside.
4. the radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation as claimed in claim 1 or 2, which is characterized in that institute
It states and does pad and cavity below top cover pinboard specifically:
By photoetching and electroplating technology, pad is done below top cover pinboard；By lithography and etching technique in top cover pinboard
Cavity is done below.
5. the radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation as claimed in claim 1 or 2, which is characterized in that institute
It states in radiator switching plate surface production TSV and pad specifically:
TSV is made in radiator switching plate surface, bore dia range is in 1um to 1000um, and depth is in 10um to 1000um；In silicon
The cvd silicon oxide perhaps insulating layers such as silicon nitride or directly thermal oxidation above piece, thickness of insulating layer range is in 10nm to 100um
Between；By physical sputtering, magnetron sputtering or evaporation process just make seed layer on the insulating layer, and seed layer thickness range exists
1nm to 100um is one or more layers, and metal material is titanium, copper, aluminium, silver, palladium, gold, thallium, tin or nickel；
Electro-coppering makes copper metal be full of TSV, and densification keeps copper finer and close at a temperature of 200 to 500 degree；Copper CMP technique makes silicon chip surface
Copper removal makes silicon chip surface only be left to fill out copper；
By photoetching, electroplating technology makes pad in radiator switching plate surface, thickness range in 1nm to 100um, for one layer or
Multilayer, metal material are titanium, copper, aluminium, silver, palladium, gold, thallium, tin or nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811593351.2A CN110010570B (en) | 2018-12-25 | 2018-12-25 | Manufacturing process of radio frequency micro-system assembly for liquid immersion heat dissipation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811593351.2A CN110010570B (en) | 2018-12-25 | 2018-12-25 | Manufacturing process of radio frequency micro-system assembly for liquid immersion heat dissipation |
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| CN110010570A true CN110010570A (en) | 2019-07-12 |
| CN110010570B CN110010570B (en) | 2021-01-26 |
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| CN111293078A (en) * | 2020-03-17 | 2020-06-16 | 浙江大学 | Method for embedding chips into cavities on front and back surfaces of adapter plate |
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| CN111968943A (en) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | Ultra-thin stacking method for radio frequency modules |
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| CN112203399A (en) * | 2020-09-30 | 2021-01-08 | 浙江集迈科微电子有限公司 | PCB assembly process with liquid heat dissipation function |
| CN112542433A (en) * | 2020-12-04 | 2021-03-23 | 华进半导体封装先导技术研发中心有限公司 | Chip packaging structure and packaging method |
| CN113066778A (en) * | 2021-03-23 | 2021-07-02 | 浙江集迈科微电子有限公司 | Interposer stacking structure and process |
| CN113066780A (en) * | 2021-03-23 | 2021-07-02 | 浙江集迈科微电子有限公司 | Interposer stacking module, multilayer module and stacking process |
| CN113161306A (en) * | 2021-04-15 | 2021-07-23 | 浙江集迈科微电子有限公司 | High-efficiency heat dissipation structure of chip and preparation process thereof |
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