CN110010574B - Multilayer stacked longitudinally interconnected radio frequency structure and manufacturing method thereof - Google Patents
Multilayer stacked longitudinally interconnected radio frequency structure and manufacturing method thereof Download PDFInfo
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- CN110010574B CN110010574B CN201811653105.1A CN201811653105A CN110010574B CN 110010574 B CN110010574 B CN 110010574B CN 201811653105 A CN201811653105 A CN 201811653105A CN 110010574 B CN110010574 B CN 110010574B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
Abstract
The invention discloses a multilayer stacked longitudinally interconnected radio frequency structure which comprises antenna array elements, a radiating support plate, a base support plate and a radio frequency module, wherein the antenna array elements are attached to the upper surface of the radiating support plate, the lower surface of the radiating support plate is welded with the upper surface of the base support plate, and the radio frequency module is attached to the lower surface of the base support plate; the lower surface of the radiating support plate is transversely provided with a circulation port, one side of the circulation port extends to one side of the radiating support plate, the radiating support plate is longitudinally provided with a plurality of rows of penetrating metal columns, the corresponding position on the base support plate is provided with the metal columns, and through holes are formed among the metal columns of the base support plate; the invention provides a multilayer stacked longitudinally interconnected radio frequency structure and a manufacturing method thereof, which solve the antenna arrangement problem and the heat dissipation problem of an ultrahigh-frequency radio frequency module.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a multilayer stacked longitudinally interconnected radio frequency structure and a manufacturing method thereof.
Background
The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.
However, for a high-frequency micro-system, the area of the antenna array is smaller and smaller, and the distance between the antennas needs to be kept within a certain range, so that the whole module has excellent communication capability. However, for an analog device chip such as a radio frequency chip, the area of the analog device chip cannot be reduced by the same multiplying factor as that of a digital chip, so that a radio frequency micro system with a very high frequency rate cannot have enough area to simultaneously place the PA/LNA, the PA/LNA needs to be stacked, and thus it is very difficult to dissipate heat of an upper chip based on the heat conducting copper column.
Disclosure of Invention
The invention overcomes the defects of the prior art, and provides a multilayer stacked longitudinally interconnected radio frequency structure and a manufacturing method thereof, which solve the antenna arrangement problem and the heat dissipation problem of an ultra-high frequency radio frequency module.
The technical scheme of the invention is as follows:
a multilayer stacked longitudinally interconnected radio frequency structure comprises antenna array elements, a heat dissipation support plate, a base support plate and a radio frequency module, wherein the antenna array elements are attached to the upper surface of the heat dissipation support plate, the lower surface of the heat dissipation support plate is welded with the upper surface of the base support plate, and the radio frequency module is attached to the lower surface of the base support plate; the lower surface of the heat dissipation support plate is transversely provided with a circulation port, one side of the circulation port extends to one side of the heat dissipation support plate, the heat dissipation support plate is longitudinally provided with a plurality of rows of penetrating metal columns, the corresponding position on the base support plate is provided with the metal columns, and through holes are formed between the metal columns of the base support plate.
Furthermore, the through hole is communicated with the flow port, and the through hole is communicated with the liquid cooling inlet and the liquid cooling outlet of the radio frequency module.
Furthermore, the lower surface of the module is used for stabilizing the radio frequency module and the module by a glue filling process.
Further, the flow opening is T-shaped as a whole.
A manufacturing method of a multilayer stacked longitudinally interconnected radio frequency structure comprises the following steps:
101) a heat dissipation carrier plate treatment step: the upper surface of the radiating support plate is provided with TSV holes through an etching process, and the depth of each TSV hole is smaller than the thickness of the radiating support plate; forming an insulating layer on the upper surface of the radiating carrier plate by adopting one of methods of silicon oxide deposition, silicon nitride deposition or direct thermal oxidation; manufacturing a seed layer on the insulating layer by adopting one of physical sputtering, magnetron sputtering or evaporation process; electroplating metal, filling the TSV hole to form a metal column, and densifying the metal column at the temperature of 200-500 ℃; removing surface metal on the upper surface of the heat dissipation carrier plate by using a CMP (chemical mechanical polishing) process, and leaving metal columns; manufacturing an RDL on the upper surface of the radiating carrier plate through photoetching and electroplating processes;
thinning the lower surface of the radiating support plate to expose the metal column on the back; depositing silicon oxide or silicon nitride on the lower surface of the radiating carrier plate to form an insulating layer, and exposing the metal column by using a CMP (chemical mechanical polishing) process; manufacturing a bonding pad on the lower surface of the radiating carrier plate through photoetching and electroplating processes; manufacturing a flow port on the lower surface of the heat dissipation carrier plate through a photoetching process;
102) a base carrier plate treatment step: manufacturing TSV holes in the positions, corresponding to the metal columns of the radiating support plate, of the upper surface of the base support plate through an etching process, wherein the depth of each TSV hole is smaller than the thickness of the base support plate; forming an insulating layer on the upper surface of the base carrier plate by adopting one of methods of silicon oxide deposition, silicon nitride deposition or direct thermal oxidation; manufacturing a seed layer on the insulating layer by adopting one of physical sputtering, magnetron sputtering or evaporation process; electroplating metal, filling the TSV hole to form a metal column, and densifying the metal column at the temperature of 200-500 ℃; removing surface metal on the upper surface of the heat dissipation carrier plate by using a CMP (chemical mechanical polishing) process, and leaving metal columns; manufacturing an RDL on the upper surface of the base carrier plate through photoetching and electroplating processes; blind holes are manufactured among the metal columns on the upper surface of the base carrier plate through an etching process;
thinning the lower surface of the base support plate, exposing the bottom ends of the metal columns and the bottoms of the blind holes, and depositing silicon oxide or silicon nitride to form an insulating layer; exposing the metal column by a CMP process; manufacturing an RDL and a bonding pad on the lower surface of the base carrier plate through photoetching and electroplating processes;
103) bonding: the heat dissipation carrier plate and the base carrier plate are welded through a wafer-level bonding process to form a module; mounting antenna array elements on a bonding pad on the upper surface of the module through a mounting process;
104) a stacking step: the lower surface of the module is vertically pasted with a radio frequency module, a liquid cooling inlet and a liquid cooling outlet of the radio frequency module are in butt joint with a blind hole of the module, a side wall bonding pad of the radio frequency module is interconnected with a bonding pad on the lower surface of the module, an antenna array element is pasted on the upper surface of the module, and a longitudinally interconnected radio frequency structure is obtained through laser or mechanical cutting.
Furthermore, the heat dissipation carrier plate and the base carrier plate are made of one of 4, 6, 8 and 12 inches, the thickness ranges from 200um to 2000um, and the material is one of silicon wafers, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane.
Furthermore, the diameter range of the TSV hole is 1um to 1000um, and the depth is 10um to 1000 um; the thickness of the insulating layer ranges from 10nm to 100um, the thickness of the seed layer ranges from 1nm to 100um, the seed layer is made of one or more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, and the seed layer is one or more layers.
Further, the thickness of the RDL ranges from 1um to 1000um, and the width ranges from 10um to 1000 um; the depth range of the flow opening is 1um to 700um, and the width is 1um to 10 mm; the diameter of the blind hole is between 1um and 10mm, and the depth is between 10um and 700 um; the thickness of the bonding pad is between 10nm and 200 um; the metal bonding pad adopts one of copper, aluminum, nickel, silver, gold and tin; the bonding pad is one or more layers.
Further, the temperature of the bonding process is controlled between 100 and 350 degrees.
Furthermore, the lower surface of the module is used for stabilizing the radio frequency module and the module by a glue filling process.
Compared with the prior art, the invention has the advantages that: the invention realizes the electrical interconnection of the radio frequency module and the antenna by arranging the adapter plate with the micro channel as an interconnection medium for the interconnection of the radio frequency chip module and the antenna, and meanwhile, the adapter plate provides cooling liquid to cool the radio frequency chip module; the radio frequency module is welded on the adapter plate in a vertical placement mode, and the problem that the antenna area of the ultrahigh power module is not enough can be solved.
Drawings
FIG. 1 is a cross-sectional view of a heat-dissipating carrier according to the present invention;
FIG. 2 is a cross-sectional view of the grounding metal of FIG. 1 according to the present invention;
FIG. 3 is a cross-sectional view of the RF chip of FIG. 2 according to the present invention;
FIG. 4 is a cross-sectional view of the present invention;
FIG. 5 is a cross-sectional view of the invention in an upright position;
FIG. 6 is a cross-sectional view of the antenna connection pad formed in FIG. 5 in accordance with the present invention;
FIG. 7 is a cross-sectional view of the multi-section of FIG. 1 in accordance with the present invention;
FIG. 8 is a cross-sectional view of the multi-section of FIG. 2 according to the present invention;
FIG. 9 is a cross-sectional view of the multi-section of FIG. 3 according to the present invention;
the labels in the figure are: the antenna comprises a heat dissipation carrier plate 101, metal columns 102, an RDL103, pads 104, a circulation port 105, a base carrier plate 201, blind holes 202, an antenna array element 301 and a radio frequency module 401.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.
The invention is further described with reference to the following figures and detailed description.
As shown in fig. 1 to 6, a multilayer stacked longitudinally interconnected rf structure includes an antenna array element 301, a heat dissipation carrier 101, a base carrier 201, and an rf module 401, wherein the antenna array element 301 is attached to the upper surface of the heat dissipation carrier 101, the lower surface of the heat dissipation carrier 101 is welded to the upper surface of the base carrier 201, and the rf module 401 is attached to the lower surface of the base carrier 201; the bottom surface of the heat-dissipating carrier 101 is transversely provided with a circulation port 105, one side of the circulation port 105 extends to one side of the heat-dissipating carrier 101, the heat-dissipating carrier 101 is longitudinally provided with a plurality of rows of penetrating metal posts 102, the corresponding position on the base carrier 201 is provided with the metal posts 102, and through holes are arranged between the metal posts 102 of the base carrier 201. The through holes communicate with the flow ports 105 and with the liquid cooling inlet and outlet of the rf module 401. The lower surface of the module is secured to the RF module 401 and the module by a glue filling process. The communication port 105 has a T-shape as a whole.
A manufacturing method of a multilayer stacked longitudinally interconnected radio frequency structure comprises the following steps:
101) a heat dissipation carrier plate 101 treatment step: the upper surface of the heat dissipation carrier plate 101 is provided with TSV holes through an etching process, the diameter range of the TSV holes is 1um to 1000um, and the depth of the TSV holes is 10um to 1000 um. The depth of the TSV hole is smaller than the thickness of the heat dissipation carrier 101. The upper surface of the heat dissipation carrier plate 101 is formed with an insulating layer by one of methods of depositing silicon oxide, depositing silicon nitride or direct thermal oxidation, and the thickness of the insulating layer ranges from 10nm to 100 um. The seed layer is manufactured on the insulating layer by adopting one of physical sputtering, magnetron sputtering or evaporation plating processes, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the material can be one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like. When the seed layer has a multi-layer structure, each layer is generally made of the same material. Metal is electroplated to fill the TSV hole forming metal pillar 102, and the metal pillar 102 is densified at a temperature of 200 to 500 degrees. The CMP process removes the surface metal on the upper surface of the heat dissipation carrier 101, leaving the metal pillars 102. The upper surface of the heat dissipation carrier plate 101 is manufactured into the RDL103 through photoetching and electroplating processes, wherein the thickness of the RDL103 ranges from 1um to 1000um, and the width of the RDL103 ranges from 10um to 1000 um.
The lower surface of the heat-dissipating carrier 101 is thinned to expose the backside metal posts 102. Silicon oxide or silicon nitride is deposited on the lower surface of the heat dissipation carrier plate 101 to form an insulating layer, and the thickness of the insulating layer is between 100nm and 100 um. The CMP process exposes the metal posts 102. The lower surface of the heat dissipation carrier 101 is fabricated into the bonding pad 104 by photolithography and electroplating processes. The thickness of the bonding pad 104 ranges from 1nm to 200um, and the structure thereof may be one layer or multiple layers, and the material may be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel, etc. When the pad 104 has a multi-layer structure, each layer is typically made of the same material. The lower surface of the heat dissipation carrier 101 is formed with a flow hole 105 by a photolithography and etching process. The flow port 105 has a depth ranging from 1um to 700um and a width of the flow port 105 ranging from 1um to 10 mm. When the communication port 105 has a T-shape, the width is 1/2 at the maximum.
102) The base carrier 201 processing step: the upper surface of the base carrier plate 201 and the position corresponding to the metal column 102 of the heat dissipation carrier plate 101 are provided with TSV holes through an etching process, the diameter range of the TSV holes is 1um to 1000um, and the depth of the TSV holes is 10um to 1000 um; the depth of the TSV holes is less than the thickness of the base carrier 201. The upper surface of the base carrier 201 is formed with an insulating layer by one of methods of depositing silicon oxide, depositing silicon nitride or direct thermal oxidation, and the thickness of the insulating layer ranges from 10nm to 100 um. The seed layer is manufactured on the insulating layer by adopting one of physical sputtering, magnetron sputtering or evaporation plating processes, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the material can be one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like. When the seed layer has a multi-layer structure, each layer is generally made of the same material. Metal is electroplated to fill the TSV hole forming metal pillar 102, and the metal pillar 102 is densified at a temperature of 200 to 500 degrees. The CMP process removes the surface metal on the upper surface of the heat dissipation carrier 101, leaving the metal pillars 102. The upper surface of the base carrier 201 is manufactured into the RDL103 through photoetching and electroplating processes, wherein the thickness range of the RDL103 is 1um to 1000um, and the width of the RDL103 is 10um to 1000 um. Blind holes 202 are formed between the metal posts 102 on the upper surface of the base carrier 201 by an etching process. The diameter of the blind hole 202 is between 1um and 10mm, and the depth of the blind hole 202 is between 10um and 700 um.
The lower surface of the base carrier plate 201 is thinned, the bottom end of the metal column 102 and the bottom of the blind hole 202 are exposed, a deposited silicon oxide or silicon nitride is adopted to form an insulating layer, and the thickness of the insulating layer is 100nm to 100 um. The CMP process exposes the metal posts 102. The RDL103 and the bonding pads 104 are formed on the lower surface of the submount carrier 201 by photolithography and electroplating processes. The thickness of the bonding pad 104 ranges from 1nm to 200um, and the structure thereof may be one layer or multiple layers, and the material may be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel, etc. When the pad 104 has a multi-layer structure, each layer is typically made of the same material.
103) Bonding: the heat dissipation carrier 101 and the base carrier 201 are welded by a wafer-level bonding process to form a module. Wherein, the bonding temperature is controlled between 100 and 350 ℃. The antenna array element 301 is mounted on the module upper surface bonding pad 104 through a mounting process.
104) A stacking step: the back of the module is vertically provided with the radio frequency module 401 in a mounting mode, a liquid cooling inlet and a liquid cooling outlet of the radio frequency module 401 are in butt joint with the blind hole 202 of the module, the side wall bonding pad 104 of the radio frequency module 401 is connected with the bonding pad 104 on the lower surface of the module in an interconnecting mode, and a longitudinally interconnected radio frequency structure is obtained through laser or mechanical cutting. The rf module 401 is a conventional module with a liquid cooling function and a radio frequency chip.
The radio frequency module 401 is vertically mounted on the lower surface of the module, a liquid cooling inlet and a liquid cooling outlet of the radio frequency module 401 are in butt joint with the circulation port 105 of the module, and the side wall electrical interconnection pad 104 of the radio frequency module 401 is interconnected with the pad 104 on the lower surface of the module. The radio frequency module 401 is stabilized by a glue filling process at the bottom of the lower surface of the module, increasing the stability of the module. Or directly performing a molding process, i.e., injection molding, on the lower surface of the module to protect the radio frequency module 401 of the vertical module. The antenna array element 301 is attached to the upper surface of the module, and the stability of the module is improved by using a glue filling process. And finally, obtaining the multilayer stacked longitudinally interconnected radio frequency structure through laser or mechanical cutting.
The heat dissipation carrier plate 101 and the base carrier plate 201 are made of one of 4, 6, 8, and 12 inch wafers, the thickness range is 200um to 2000um, silicon wafers are generally used, and other materials including inorganic materials such as glass, quartz, silicon carbide, and alumina, and organic materials such as epoxy resin and polyurethane can be used.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (6)
1. A manufacturing method of a multilayer stacked longitudinally interconnected radio frequency structure is characterized by comprising an antenna array element, a radiating support plate, a base support plate and a radio frequency module, wherein the antenna array element is attached to the upper surface of the radiating support plate, the lower surface of the radiating support plate is welded with the upper surface of the base support plate, and the radio frequency module is attached to the lower surface of the base support plate; the lower surface of the radiating support plate is transversely provided with a circulation port, one side of the circulation port extends to one side of the radiating support plate, the radiating support plate is longitudinally provided with a plurality of rows of penetrating metal columns, the corresponding position on the base support plate is provided with the metal columns, and through holes are formed among the metal columns of the base support plate; the through hole is communicated with the flow port, and the through hole is communicated with the liquid cooling inlet and the liquid cooling outlet of the radio frequency module; the lower surface of the module is used for stabilizing the radio frequency module and the module by a glue filling process; the whole shape of the flow opening is T-shaped; the specific treatment comprises the following steps:
101) a heat dissipation carrier plate treatment step: the upper surface of the radiating support plate is provided with TSV holes through an etching process, and the depth of each TSV hole is smaller than the thickness of the radiating support plate; forming an insulating layer on the upper surface of the radiating carrier plate by adopting one of methods of silicon oxide deposition, silicon nitride deposition or direct thermal oxidation; manufacturing a seed layer on the insulating layer by adopting one of physical sputtering, magnetron sputtering or evaporation process; electroplating metal, filling the TSV hole to form a metal column, and densifying the metal column at the temperature of 200-500 ℃; removing surface metal on the upper surface of the heat dissipation carrier plate by using a CMP (chemical mechanical polishing) process, and leaving metal columns; manufacturing an RDL on the upper surface of the radiating carrier plate through photoetching and electroplating processes;
thinning the lower surface of the radiating support plate to expose the metal column on the back; depositing silicon oxide or silicon nitride on the lower surface of the radiating carrier plate to form an insulating layer, and exposing the metal column by using a CMP (chemical mechanical polishing) process; manufacturing a bonding pad on the lower surface of the radiating carrier plate through photoetching and electroplating processes; manufacturing a flow port on the lower surface of the heat dissipation carrier plate through a photoetching process;
102) a base carrier plate treatment step: manufacturing TSV holes in the positions, corresponding to the metal columns of the radiating support plate, of the upper surface of the base support plate through an etching process, wherein the depth of each TSV hole is smaller than the thickness of the base support plate; forming an insulating layer on the upper surface of the base carrier plate by adopting one of methods of silicon oxide deposition, silicon nitride deposition or direct thermal oxidation; manufacturing a seed layer on the insulating layer by adopting one of physical sputtering, magnetron sputtering or evaporation process; electroplating metal, filling the TSV hole to form a metal column, and densifying the metal column at the temperature of 200-500 ℃; removing surface metal on the upper surface of the heat dissipation carrier plate by using a CMP (chemical mechanical polishing) process, and leaving metal columns; manufacturing an RDL on the upper surface of the base carrier plate through photoetching and electroplating processes; blind holes are manufactured among the metal columns on the upper surface of the base carrier plate through an etching process;
thinning the lower surface of the base support plate, exposing the bottom ends of the metal columns and the bottoms of the blind holes, and depositing silicon oxide or silicon nitride to form an insulating layer; exposing the metal column by a CMP process; manufacturing an RDL and a bonding pad on the lower surface of the base carrier plate through photoetching and electroplating processes;
103) bonding: the heat dissipation carrier plate and the base carrier plate are welded through a wafer-level bonding process to form a module; mounting antenna array elements on a bonding pad on the upper surface of the module through a mounting process;
104) a stacking step: the lower surface of the module is vertically pasted with a radio frequency module, a liquid cooling inlet and a liquid cooling outlet of the radio frequency module are in butt joint with blind holes of the module, side wall bonding pads of the radio frequency module are interconnected with bonding pads on the lower surface of the module, antenna array elements are pasted on the upper surface of the module, and a multilayer stacked longitudinally interconnected radio frequency structure is obtained through laser or mechanical cutting.
2. The method for manufacturing a multilayer stacked longitudinally interconnected radio frequency structure according to claim 1, wherein: the heat dissipation carrier plate and the base carrier plate are made of one of 4, 6, 8 and 12 inches, the thickness range is 200um to 2000um, and the material is made of one of silicon wafers, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane.
3. The method for manufacturing a multilayer stacked longitudinally interconnected radio frequency structure according to claim 1, wherein: the diameter range of the TSV hole is 1um to 1000um, and the depth is 10um to 1000 um; the thickness of the insulating layer ranges from 10nm to 100um, the thickness of the seed layer ranges from 1nm to 100um, the seed layer is made of one or more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, and the seed layer is one or more layers.
4. The method for manufacturing a multilayer stacked longitudinally interconnected radio frequency structure according to claim 1, wherein: the RDL has a thickness ranging from 1um to 1000um and a width ranging from 10um to 1000 um; the depth range of the flow opening is 1um to 700um, and the width is 1um to 10 mm; the diameter of the blind hole is between 1um and 10mm, and the depth is between 10um and 700 um; the thickness of the bonding pad is between 10nm and 200 um; the metal bonding pad adopts one of copper, aluminum, nickel, silver, gold and tin; the bonding pad is one or more layers.
5. The method for manufacturing a multilayer stacked longitudinally interconnected radio frequency structure according to claim 1, wherein: the temperature of the bonding process is controlled between 100 and 350 degrees.
6. The method for manufacturing a multilayer stacked longitudinally interconnected radio frequency structure according to claim 1, wherein: the lower surface of the module is used for fixing the radio frequency module and the module by a glue filling process.
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| CN110739230A (en) * | 2019-09-24 | 2020-01-31 | 杭州臻镭微波技术有限公司 | manufacturing method of three-dimensional stacked heat dissipation module aiming at radio frequency chip heat concentration points |
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| DE102020203786A1 (en) * | 2020-03-24 | 2021-09-30 | Volkswagen Aktiengesellschaft | Method for manufacturing a heat sink for an electronic component |
| CN111653488A (en) * | 2020-06-15 | 2020-09-11 | 上海先方半导体有限公司 | Micro-channel heat dissipation system and manufacturing method thereof |
| CN111952195B (en) * | 2020-08-24 | 2022-03-15 | 浙江集迈科微电子有限公司 | Liquid micro-channel interconnection interface and welding process thereof |
| CN113300072B (en) * | 2021-05-11 | 2022-07-15 | 中国电子科技集团公司第二十九研究所 | Radio frequency array front end three-dimensional integrated structure and manufacturing method |
| CN115172298B (en) * | 2022-06-27 | 2023-12-12 | 深圳宏芯宇电子股份有限公司 | Chip packaging structure |
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| US8035223B2 (en) * | 2007-08-28 | 2011-10-11 | Research Triangle Institute | Structure and process for electrical interconnect and thermal management |
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| JPS60143653A (en) * | 1983-12-30 | 1985-07-29 | Hitachi Ltd | Sealing and cooling mechanism of package |
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