CN110739226A - three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure - Google Patents
three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure Download PDFInfo
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- CN110739226A CN110739226A CN201910904817.4A CN201910904817A CN110739226A CN 110739226 A CN110739226 A CN 110739226A CN 201910904817 A CN201910904817 A CN 201910904817A CN 110739226 A CN110739226 A CN 110739226A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
Abstract
The invention discloses a manufacturing method of three-dimensional radio frequency modules based on multilayer heat dissipation structures, which specifically comprises the following steps of 101) manufacturing a patch panel, 102) manufacturing a bottom plate, 103) bonding, and 104) arranging chips, wherein heat can be quickly conducted into a heat dissipation base by arranging heat conduction metal or heat conduction pipelines at the bottom of the chips, then a plurality of layers of micro-channel liquid-phase heat dissipation channels are arranged in the heat dissipation base, and cooling liquid in the heat dissipation channels moves in different flowing directions to balance the temperature of liquid in different layers and micro-channels at different sides of the chips , so that the heat dissipation capacity of the micro-channels at the bottom of the chips is close to that of the three-dimensional radio frequency modules based on the multilayer heat dissipation structures, which is .
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing method of three-dimensional radio frequency modules based on a multilayer heat dissipation structure.
Background
The rapid development of electronic products is the main driving force of the evolution of packaging technology, and miniaturization, high density, high frequency, high speed, high performance, high reliability and low cost are the mainstream development directions of advanced packaging, wherein system-in-package is the most important and most potential of the technology for satisfying the high-density system integration.
In various system-in-package (SIP) packages, a silicon interposer is used as a substrate technology of the SIP package, which provides the shortest connection distance, the smallest pad size and the smallest center-to-center distance for the chip-to-chip and the chip-to-PCB. Advantages of silicon interposer technology over other interconnect technologies, such as wire bonding, include: better electrical performance, higher bandwidth, higher density, smaller size, lighter weight.
However, a harsh heat dissipation structure is required for the silicon interposer embedding process, and for some radio frequency chips, if the area to be dissipated is large, the cooling liquid enters the micro channel at the end, and the temperature is higher and higher along with the increasing distance of the advance at the bottom of the chip, so that when the cooling liquid is left at the other end of the chip, the heat dissipation capacity is greatly reduced, the heat dissipation capacity of the surface of the chip is not , and the reliability of the chip in operation is greatly affected.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides methods for manufacturing the three-dimensional radio frequency module based on the multilayer heat dissipation structure.
The technical scheme of the invention is as follows:
A three-dimensional radio frequency module manufacturing method based on a multilayer heat dissipation structure specifically comprises the following steps:
101) the manufacturing steps of the adapter plate are as follows: manufacturing a micro-channel groove and a TSV hole on the upper surface of the adapter plate through photoetching, dry etching or wet etching processes; the micro-channel grooves are arranged on two sides of the TSV hole; depositing silicon oxide or silicon nitride on the upper surface of the adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing an RDL on the upper surface of the adapter plate;
thinning the lower surface of the adapter plate to expose the bottom of the TSV hole, and manufacturing a welding pad on the lower surface of the adapter plate through photoetching and electroplating processes;
102) a bottom plate manufacturing step: manufacturing a micro-channel groove and a TSV hole on the upper surface of the bottom plate through photoetching, dry etching or wet etching processes; the micro-channel grooves are arranged on two sides of the TSV hole; depositing silicon oxide or silicon nitride on the upper surface of the bottom plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing an RDL on the upper surface of the bottom plate;
103) bonding: bonding the adapter plate in the step 101) with the base plate in the step 102) in a welding mode to form a heat dissipation base with a plurality of layers of micro-channel grooves; the TSV hole of the adapter plate and the TSV hole of the base plate are communicated to form a hole;
104) chip placement: filling heat-conducting media in the holes; or electroplating metal on the side wall of the hole or the whole hole to form a seed layer, and then filling the hole with a heat-conducting medium; and cutting the heat dissipation base into a single module, welding a power chip on the hole, and communicating the micro-channel groove to form the three-dimensional radio frequency module with the heat dissipation structure.
, the RDL manufacturing process comprises RDL routing and a PAD, an insulating layer is manufactured by depositing silicon oxide or silicon nitride, a chip PAD is exposed by photoetching and dry etching, RDL routing arrangement is performed by photoetching and electroplating processes, wherein the RDL routing adopts or a mixture of copper, aluminum, nickel, silver, gold and tin, the RDL routing adopts a layer or multilayer structure, the thickness range is 10nm to 1000um, bonding metal is manufactured by photoetching and electroplating processes to form the PAD, and the window diameter of the PAD is 10um to 10000 um.
, covering an insulating layer on the surface of the RDL and exposing the pad through a windowing process.
, the diameter of TSV hole ranges from 1um to 1000um, the depth ranges from 10um to 1000um, the thickness of the insulating layer ranges from 10nm to 100um, the seed layer structure is layer or multi-layer structure, the thickness ranges from 1nm to 100um, and the material adopts or mixture of multiple titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
, the liquid flowing direction inside the three-dimensional radio frequency module is not fixed.
, adopting of 4, 6, 8 and 12 inches of adapter plate and bottom plate, the thickness range is 200um to 2000um, and the material is glass, quartz, silicon carbide, alumina, epoxy resin or polyurethane.
, the electroplated metal has layers or multiple layers, and the material is or more of Ti, Cu, Al, Ag, Pd, Au, Tl, Sn and Ni.
, the heat conducting medium is made of metal or nonmetal, wherein the metal is or more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, and the nonmetal is graphene.
Compared with the prior art, the invention has the advantages that the heat can be quickly conducted into the heat dissipation base by arranging the heat conducting metal or the heat conducting pipeline at the bottom of the chip, then the multi-layer micro-channel liquid-phase heat dissipation channel is arranged in the heat dissipation base, and the cooling liquid in the heat dissipation channel moves in different flowing directions, so that the temperature of the liquid in the micro-channels at different layers and different sides of the chip is balanced, and the heat dissipation capacity of the micro-channel at the bottom of the chip is close to .
Drawings
FIG. 1 is a schematic view of a base plate of the present invention;
FIG. 2 is a schematic view of the present invention;
FIG. 3 is another face sectional view of the present invention;
FIG. 4 is a schematic view of another adapters of the present invention;
FIG. 5 is a schematic view of another types of backplanes in accordance with the present invention;
FIG. 6 is another schematic diagrams of the present invention.
The labels in the figure are: the heat conducting structure comprises an adapter plate 101, TSV holes 102, a micro-channel groove 103, a power chip 104 and a heat conducting medium 105.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.
It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein by .
Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.
The invention is further described in conjunction with the figures and the detailed description.
Example 1:
as shown in fig. 1 to 3, the methods for manufacturing a three-dimensional rf module based on a multi-layer heat dissipation structure specifically include the following steps:
101) the manufacturing method of the adapter plate 101 comprises the steps of manufacturing a micro-channel groove 103 and a TSV hole 102 on the upper surface of the adapter plate 101 through a photoetching, dry method or wet etching process, wherein the depth range of the micro-channel groove 103 is 10-700 mu m, the length range of the micro-channel groove 103 is 100-10 mm, the diameter range of the TSV hole 102 is 1-1000 mu m, and the depth of the TSV hole 102 is 10-1000 mu m, the micro-channel groove 103 is arranged on two sides of the TSV hole 102, silicon oxide or silicon nitride is deposited on the upper surface of the adapter plate 101, or an insulating layer is formed through direct thermal oxidation, the thickness range of the insulating layer is 10-100 mu m, a seed layer is manufactured above the insulating layer through a physical sputtering, magnetic control sputtering or evaporation process, the thickness range of the seed layer is 1-100 mu m, the structure of the seed layer can be layers or multiple layers, and the material can be or a mixture of titanium, copper, aluminum, silver.
The RDL manufacturing process comprises RDL wiring and a bonding PAD, wherein an insulating layer is manufactured by depositing silicon oxide or silicon nitride, a chip PAD is exposed by photoetching and dry etching, RDL wiring arrangement is performed by photoetching and electroplating processes, the RDL wiring adopts or a mixture of multiple of copper, aluminum, nickel, silver, gold and tin, the structure of the RDL wiring adopts a layer or multilayer structure, the thickness range is 10nm to 1000um, bonding metal is manufactured by photoetching and electroplating processes to form the bonding PAD, the windowing diameter of the bonding PAD is 10um to 10000um, the insulating layer can be covered on the surface of the RDL, and the bonding PAD is exposed by the windowing process.
And thinning the lower surface of the adapter plate 101 to expose the bottom of the TSV hole 102, and manufacturing a welding pad on the lower surface of the adapter plate 101 through photoetching and electroplating processes.
102) A bottom plate manufacturing step: manufacturing a micro-channel groove 103 and a TSV hole 102 on the upper surface of the bottom plate through photoetching, dry etching or wet etching processes; the micro-channel grooves 103 are arranged on two sides of the TSV hole 102; depositing silicon oxide or silicon nitride on the upper surface of the bottom plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; and manufacturing RDL on the upper surface of the bottom plate. That is, the bottom plate is manufactured in the same manner as the interposer 101, but the bottom surface of the bottom plate does not need to be thinned to expose the bottom of the TSV hole 102.
103) Bonding: and bonding a plurality of adapter plates 101 of the step 101) and the bottom plate of the step 102) by welding to form a heat dissipation base with a plurality of layers of micro-channel grooves 103. The TSV holes 102 of the interposer 101 and the TSV holes 102 of the base plate are communicated to form holes.
104) Chip placement: filling the holes with a heat-conducting medium 105; or electroplating metal on the side wall of the hole or the whole hole to form a seed layer, and then filling the hole with the heat-conducting medium 105; and cutting the heat dissipation base into a single module, welding a power chip 104 on the hole, and communicating the micro-channel groove 103 to form the three-dimensional radio frequency module with the heat dissipation structure. The liquid flowing direction in the three-dimensional radio frequency module is not fixed. That is, the liquid flow direction may be the same direction or different directions.
The structure of the electroplated metal is layers or a plurality of layers, the material is or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like, the heat conducting medium 105 is made of metal or nonmetal, wherein the metal is or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, and the nonmetal is graphene.
The adapter plate 101 and the bottom plate are kinds of 4, 6, 8 and 12 inches in size, the thickness range is 200um to 2000um, the adapter plate can be made of other materials including inorganic materials such as glass, quartz, silicon carbide and aluminum oxide, and can also be made of organic materials such as epoxy resin and polyurethane, and the adapter plate has the main function of supporting.
Example 2:
as shown in fig. 4 to 6, the difference from embodiment 1 is that TSV holes 102 are provided on both sides of the microchannel groove 103, and only the TSV holes 102 of the bottom plate are communicated with each other. The TSV holes 102 are filled with a heat conductive medium 105. A power chip 104 is soldered over the TSV hole 102.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (8)
1, three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure, which is characterized by comprising the following steps:
101) the manufacturing steps of the adapter plate are as follows: manufacturing a micro-channel groove and a TSV hole on the upper surface of the adapter plate through photoetching, dry etching or wet etching processes; the micro-channel grooves are arranged on two sides of the TSV hole; depositing silicon oxide or silicon nitride on the upper surface of the adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing an RDL on the upper surface of the adapter plate;
thinning the lower surface of the adapter plate to expose the bottom of the TSV hole, and manufacturing a welding pad on the lower surface of the adapter plate through photoetching and electroplating processes;
102) a bottom plate manufacturing step: manufacturing a micro-channel groove and a TSV hole on the upper surface of the bottom plate through photoetching, dry etching or wet etching processes; the micro-channel grooves are arranged on two sides of the TSV hole; depositing silicon oxide or silicon nitride on the upper surface of the bottom plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing an RDL on the upper surface of the bottom plate;
103) bonding: bonding the adapter plate in the step 101) with the base plate in the step 102) in a welding mode to form a heat dissipation base with a plurality of layers of micro-channel grooves; the TSV hole of the adapter plate and the TSV hole of the base plate are communicated to form a hole;
104) chip placement: filling heat-conducting media in the holes; or electroplating metal on the side wall of the hole or the whole hole to form a seed layer, and then filling the hole with a heat-conducting medium; and cutting the heat dissipation base into a single module, welding a power chip on the hole, and communicating the micro-channel groove to form the three-dimensional radio frequency module with the heat dissipation structure.
2. The method for manufacturing three-dimensional RF module based on multi-layer heat dissipation structure, according to claim 1, wherein the RDL manufacturing process includes RDL trace and PAD, the insulation layer is manufactured by depositing silicon oxide or silicon nitride, the chip PAD is exposed by photolithography and dry etching, the RDL trace layout is performed by photolithography and electroplating process, wherein the RDL trace adopts or a mixture of copper, aluminum, nickel, silver, gold and tin, the structure adopts layer or multi-layer structure, the thickness range is 10nm to 1000um, the bonding metal is manufactured by photolithography and electroplating process to form the PAD, and the PAD window opening diameter is 10um to 10000 um.
3. The method for fabricating a three-dimensional RF module according to claim 2, wherein the RDL is covered with an insulating layer and exposed through a windowing process.
4. The three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure as claimed in claim 2, wherein the TSV hole diameter ranges from 1um to 1000um, the depth ranges from 10um to 1000um, the insulation layer thickness ranges from 10nm to 100um, the seed layer structure is layers or multilayer structure, the thickness ranges from 1nm to 100um, and the material is or more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
5. The method of claim 1, wherein the direction of fluid flow inside the three-dimensional RF module is not constant.
6. The method for manufacturing the three-dimensional radio frequency modules based on the multilayer heat dissipation structure according to claim 1, wherein of 4, 6, 8 and 12 inches of the adapter plate and the base plate are adopted, the thickness ranges from 200um to 2000um, and the materials are glass, quartz, silicon carbide, aluminum oxide, epoxy resin or polyurethane.
7. The method for manufacturing a three-dimensional radio frequency module based on a multi-layer heat dissipation structure as claimed in claim 1, wherein the plated metal itself has layers or multi-layers, and the material is or more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
8. The method for manufacturing a three-dimensional RF module based on a multilayer heat dissipation structure, according to claim 1, wherein the heat conducting medium is made of metal or nonmetal, wherein the metal is selected from or more of Ti, Cu, Al, Ag, Pd, Au, Tl, Sn and Ni, and the nonmetal is selected from graphene.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910904817.4A CN110739226A (en) | 2019-09-24 | 2019-09-24 | three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure |
| CN202010587700.0A CN111653489A (en) | 2019-09-24 | 2020-06-24 | Three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure |
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| CN201910904817.4A CN110739226A (en) | 2019-09-24 | 2019-09-24 | three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure |
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| CN202010587700.0A Pending CN111653489A (en) | 2019-09-24 | 2020-06-24 | Three-dimensional radio frequency module manufacturing method based on multilayer heat dissipation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112133682A (en) * | 2020-09-07 | 2020-12-25 | 浙江集迈科微电子有限公司 | Chip assembly, heat dissipation circuit device and mobile terminal |
| CN112738978A (en) * | 2020-11-24 | 2021-04-30 | 鹤山市世拓电子科技有限公司 | Printed circuit board with micro-channel and manufacturing method thereof |
| CN113023663A (en) * | 2021-02-20 | 2021-06-25 | 北京航天控制仪器研究所 | MEMS micro-channel radiator with all-silicon structure and processing method thereof |
| WO2022021164A1 (en) * | 2020-07-29 | 2022-02-03 | 华为技术有限公司 | Semiconductor structure, electronic device, and preparation method for semiconductor structure |
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| US7432592B2 (en) * | 2005-10-13 | 2008-10-07 | Intel Corporation | Integrated micro-channels for 3D through silicon architectures |
| CN202103098U (en) * | 2011-06-08 | 2012-01-04 | 弘凯光电股份有限公司 | Heat conduction structure |
| DE112015006958T5 (en) * | 2015-09-25 | 2018-07-19 | Intel Corporation | Housing integrated microchannels |
| CN108766897B (en) * | 2018-06-12 | 2020-05-08 | 厦门大学 | Packaging method of three-dimensional heterostructure for realizing high-power GaN device layer heat dissipation |
| CN110010570B (en) * | 2018-12-25 | 2021-01-26 | 浙江集迈科微电子有限公司 | Manufacturing process of radio frequency micro-system assembly for liquid immersion heat dissipation |
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| CN110010571A (en) * | 2018-12-29 | 2019-07-12 | 杭州臻镭微波技术有限公司 | A kind of water cooling groove structure of high-power RF chip system grade encapsulation and preparation method thereof |
| CN110010573B (en) * | 2018-12-29 | 2021-03-19 | 浙江集迈科微电子有限公司 | Vertical placement liquid cooling heat dissipation structure of high-power radio frequency chip and manufacturing method thereof |
| CN110010574B (en) * | 2018-12-29 | 2021-02-09 | 浙江臻镭科技股份有限公司 | Multilayer stacked longitudinally interconnected radio frequency structure and manufacturing method thereof |
| CN110010561B (en) * | 2018-12-31 | 2021-02-26 | 浙江臻镭科技股份有限公司 | Radio frequency structure with stacked multilayer chips and manufacturing method thereof |
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- 2019-09-24 CN CN201910904817.4A patent/CN110739226A/en not_active Withdrawn
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- 2020-06-24 CN CN202010587700.0A patent/CN111653489A/en active Pending
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| WO2022021164A1 (en) * | 2020-07-29 | 2022-02-03 | 华为技术有限公司 | Semiconductor structure, electronic device, and preparation method for semiconductor structure |
| CN112133682A (en) * | 2020-09-07 | 2020-12-25 | 浙江集迈科微电子有限公司 | Chip assembly, heat dissipation circuit device and mobile terminal |
| CN112133682B (en) * | 2020-09-07 | 2022-11-25 | 浙江集迈科微电子有限公司 | Chip assembly, heat dissipation circuit device and mobile terminal |
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