CN112203399A - PCB assembly process with liquid heat dissipation function - Google Patents
PCB assembly process with liquid heat dissipation function Download PDFInfo
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- CN112203399A CN112203399A CN202011058271.4A CN202011058271A CN112203399A CN 112203399 A CN112203399 A CN 112203399A CN 202011058271 A CN202011058271 A CN 202011058271A CN 112203399 A CN112203399 A CN 112203399A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/064—Fluid cooling, e.g. by integral pipes
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Abstract
The invention provides a PCB assembly process with a liquid heat dissipation function, which comprises the following steps: (a) providing a tubular structure and a metal microchannel tube; (b) providing a substrate, manufacturing a TSV conductive column, an RDL, a bonding pad and a first groove on the surface of the substrate, and arranging a second groove on the back of the substrate to expose the top metal of the TSV conductive column to obtain an adapter plate; (c) embedding a first chip in the second groove of the adapter plate, filling a colloid in a gap between the second groove and the first chip, embedding the tubular structure into the first groove at the bottom of the first chip, interconnecting the tubular structure and the metal micro-channel tube, and then pasting a second chip on the surface of the adapter plate to obtain the PCB assembly process with the liquid heat dissipation function. According to the PCB assembly process with the liquid heat dissipation function, the micro-channel heat dissipation structure is directly welded below the chip, so that the heat of the chip can be directly transferred into the micro-channel through the bottom welding layer, heat exchange is realized, and the heat dissipation capacity of the chip is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a PCB assembly process with a liquid heat dissipation function.
Background
The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.
However, for a high-frequency micro-system, the area of the antenna array is smaller and smaller, and the distance between the antennas needs to be kept within a certain range, so that the whole module has excellent communication capability. However, for an analog device chip such as a radio frequency chip, the area of the analog device chip cannot be reduced by the same magnification as that of a digital chip, so that a radio frequency micro system with a very high frequency will not have enough area to simultaneously place the PA/LNA, and the PA/LNA needs to be stacked or vertically placed.
Therefore, the heat dissipation structure needs to adopt a more advanced liquid cooling or phase change refrigeration process, a metal processing mode is generally used as a base of the radio frequency module, a micro-flow channel is arranged in the base, and the module is fixed on the metal base by adopting a welding process to complete the placement of the chip. However, in the stacking technology, the heat on the power chip needs to be transferred to the heat dissipation liquid through several layers of media, and the efficiency is low.
Disclosure of Invention
The invention aims to overcome and supplement the defects in the prior art, provide a PCB assembly process with a liquid heat dissipation function and improve the heat dissipation capability of a power chip. The technical scheme adopted by the invention is as follows:
a PCB assembly process with liquid heat dissipation function is disclosed, wherein: the method comprises the following steps:
(a) providing a tubular structure with a microchannel, and providing a metal microchannel tube;
(b) providing a substrate, manufacturing a TSV conductive column, an RDL, a bonding pad and a first groove on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back surface of the substrate, then arranging a second groove on the back surface of the substrate to enable the top end of the TSV conductive column to be exposed out of the second groove, depositing a passivation layer on the back surface of the substrate, and exposing metal on the top of the TSV conductive column through photoetching and dry etching to obtain an adapter plate;
(c) embedding a first chip in the second groove of the adapter plate, filling a colloid in a gap between the second groove and the first chip, embedding the tubular structure into the first groove at the bottom of the first chip, interconnecting the tubular structure and the metal micro-channel tube, and then pasting a second chip on the surface of the adapter plate to obtain the PCB assembly structure with the liquid heat dissipation function.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the preparation method of the tubular structure in the step (a) comprises the following specific steps:
(a1) providing an upper cover plate with a groove;
(a2) providing a carrier plate with a through hole;
(a3) the upper cover plate and the carrier plate are welded together by a welding process to form a tubular structure with a micro-channel.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: upper cover plate thickness is 100um ~2000um, and the width is 100um ~10mm, and the recess degree of depth is 100um ~1900um, and the width is 90um ~9 mm.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the surface of the substrate through photoetching and dry etching processes;
(b2) depositing an insulating layer on the surface of the substrate, and manufacturing at least one seed layer on the insulating layer;
(b3) electroplating copper, filling the TSV hole with the copper metal to form a TSV conductive column, polishing to remove the copper on the surface of the silicon wafer, and only remaining the copper on the surface of the silicon wafer;
(b4) manufacturing a seed layer above the insulating layer, defining the RDL and the position of the bonding pad by photoetching, and electroplating to manufacture the RDL and the bonding pad;
(b5) manufacturing a first groove on the surface of a silicon wafer by a dry etching process; and performing temporary bonding on the surface of the substrate, thinning the back of the substrate, then manufacturing a through hole on the back of the substrate by using a dry etching process, then continuously manufacturing a second groove on the back of the substrate by using the dry etching process, exposing the top of the TSV conductive column, depositing a passivation layer on the back of the substrate, exposing metal on the top of the TSV by using photoetching and dry etching processes, and removing the temporary bonding to obtain the adapter plate.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the metal micro-channel pipe comprises a vertical upward liquid inlet pipeline and a horizontal liquid outlet pipeline, wherein a liquid inlet is arranged at one end, away from the liquid outlet pipeline, of the liquid inlet pipeline, and a liquid outlet is arranged at one end, away from the liquid inlet pipeline, of the liquid outlet pipeline.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the substrate is provided with a through hole, the liquid inlet pipeline is arranged in the through hole, and the liquid outlet pipeline is arranged outside the substrate and interconnects the liquid outlet and the through hole of the tubular structure.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the substrate is provided with a through hole and a third groove, the liquid inlet pipeline is arranged in the through hole, and the liquid outlet pipeline is arranged in the third groove and interconnects the liquid outlet and the through hole of the tubular structure.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the metal micro-channel pipe comprises a vertically downward liquid inlet pipeline and a horizontal liquid outlet pipeline, wherein a liquid inlet is arranged at one end, away from the liquid outlet pipeline, of the liquid inlet pipeline, and a liquid outlet is arranged at one end, away from the liquid inlet pipeline, of the liquid outlet pipeline.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the substrate is provided with a fourth groove, the liquid inlet pipeline is arranged outside the substrate, and the liquid outlet pipeline is arranged in the fourth groove and interconnects the liquid outlet and the through hole of the tubular structure.
Preferably, the PCB assembly process with liquid heat dissipation function, wherein: the metal micro-runner pipe is a straight pipe, a liquid inlet is formed in the lower end of the straight pipe, a liquid outlet is formed in the upper end of the straight pipe, a fifth groove is formed in the substrate, the straight pipe is arranged in the fifth groove, and the liquid outlet is connected with the through hole of the tubular structure in an interconnected mode.
The invention has the advantages that:
according to the PCB assembly process with the liquid heat dissipation function, the micro-channel heat dissipation structure is directly welded below the power chip, so that the heat of the power chip can be directly transferred into the micro-channel through the bottom welding layer, heat exchange is realized, and the heat dissipation capability of the power chip can be greatly improved.
Drawings
FIG. 1 is a schematic view of the tubular structure of the present invention.
FIG. 2 is a schematic view of a metal microchannel tube according to examples 1 and 2 of the present invention.
FIG. 3 is a schematic view of a metal microchannel tube according to example 3 of the present invention.
Fig. 4 is a schematic view of an interposer according to embodiment 1 of the present invention.
Fig. 5 is a schematic view of a chip embedded in a second groove according to embodiment 1 of the present invention.
Fig. 6 is a schematic view of an assembly structure of a PCB having a liquid heat dissipation function according to embodiment 1 of the present invention.
Fig. 7 is a schematic view of an interposer according to embodiment 2 of the present invention.
Fig. 8 is a schematic view of a chip embedded in a second groove according to embodiment 2 of the present invention.
Fig. 9 is a schematic view of an assembly structure of a PCB having a liquid heat dissipation function according to embodiment 2 of the present invention.
Fig. 10 is a schematic view of an interposer according to embodiment 3 of the present invention.
Fig. 11 is a schematic view of a chip embedded in a second groove according to embodiment 3 of the present invention.
Fig. 12 is a schematic view of an assembly structure of a PCB having a liquid heat dissipation function according to embodiment 3 of the present invention.
Fig. 13 is a schematic view of an interposer according to embodiment 4 of the present invention.
Fig. 14 is a schematic view of embodiment 4 of the invention showing a chip embedded in the second groove.
Fig. 15 is a schematic view of an assembly structure of a PCB having a liquid heat dissipation function according to embodiment 4 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
The embodiment provides a PCB assembly process with a liquid heat dissipation function, which comprises the following steps:
as shown in figure 1 of the drawings, in which,
(a) providing 101 with a micro-channel and providing a metal micro-channel tube; the preparation method of the tubular structure in the step (a) comprises the following steps:
(a1) an upper cover plate with a groove 102 is manufactured through a processing or semiconductor processing technology, the thickness of the cover plate is 100 um-2000 um, the width of the cover plate is 100 um-10 mm, the depth of the groove on the cover plate is 100 um-1900 um, and the width of the groove is 90 um-9 mm;
(a2) manufacturing a carrier plate with a through hole 103 on the other base material by the same processing technology;
(a3) welding the cover plate and the support plate together by a welding process to form a tubular structure with a micro-channel;
as shown in fig. 2, the elbow 104 with the microchannel is fabricated by the same process, so that the elbow can be interconnected with the tubular structure 101;
the material of the tubular structure and the bent pipe can be metal, and can also be materials which are easy to process semiconductors such as silicon, glass and the like;
(b) providing a substrate, manufacturing a TSV conductive column, an RDL, a bonding pad and a first groove on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back surface of the substrate, then arranging a second groove on the back surface of the substrate to enable the top end of the TSV conductive column to be exposed out of the second groove, depositing a passivation layer on the back surface of the substrate, and exposing metal on the top of the TSV conductive column through photoetching and dry etching to obtain an adapter plate;
the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the surface of the substrate through photoetching and dry etching processes;
as shown in fig. 4, a TSV hole 109 is formed on the surface of the substrate 107 by photolithography and dry etching processes, wherein the diameter of the TSV hole ranges from 1um to 1000um, and the depth ranges from 10um to 1000 um;
(b2) depositing an insulating layer on the surface of the substrate, and manufacturing at least one seed layer on the insulating layer;
as shown in fig. 4, an insulating layer of silicon oxide or silicon nitride is deposited over the substrate, or directly thermally oxidized, and the thickness of the insulating layer ranges from 10nm to 100 um; a seed layer is manufactured above the insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b3) electroplating copper, filling the TSV hole with the copper metal to form a TSV conductive column, polishing to remove the copper on the surface of the silicon wafer, and only remaining the copper on the surface of the silicon wafer;
electroplating copper to fill the TSV hole with copper to form a TSV conductive column, and densifying at the temperature of 200-500 ℃ to enable the copper to be more compact; copper chemical mechanical polishing is carried out to remove the copper on the surface of the substrate, so that only copper filling is left on the surface of the substrate; the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the substrate can also be reserved;
(b4) manufacturing a seed layer above the insulating layer, defining the RDL and the position of the bonding pad by photoetching, and electroplating to manufacture the RDL and the bonding pad;
firstly, a seed layer is manufactured above an insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be a layer or a plurality of layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
then, defining the RDL and the position of a bonding pad by photoetching, and electroplating to obtain the RDL and the metal of the bonding pad, wherein the thickness of the metal ranges from 1um to 100um, the metal can be one layer or multiple layers, and the metal can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b5) as shown in fig. 4, a first groove is formed on the surface of the silicon wafer by a dry etching process; and performing temporary bonding on the surface of the substrate, thinning the back of the substrate, then manufacturing a through hole 110 on the back of the substrate by using a dry etching process, then continuously manufacturing a second groove 108 on the back of the substrate by using the dry etching process, exposing the top of the TSV conductive column, depositing a passivation layer on the back of the substrate, exposing the metal on the top of the TSV by using photoetching and dry etching processes, and removing the temporary bonding to obtain the adapter plate.
(c) As shown in fig. 5, a first chip is embedded in the second groove of the interposer, and a gap between the second groove and the first chip is filled with a colloid, as shown in fig. 6, a tubular structure is embedded in the first groove at the bottom of the first chip, and the tubular structure and the metal micro-channel tube are interconnected, and then the second chip is attached to the surface of the interposer, so as to obtain the PCB assembly process with liquid heat dissipation function.
As shown in fig. 2, the metal microchannel tube comprises a vertically upward liquid inlet pipeline and a horizontal liquid outlet pipeline, wherein a liquid inlet is arranged at one end of the liquid inlet pipeline, which is far away from the liquid outlet pipeline, and a liquid outlet is arranged at one end of the liquid outlet pipeline, which is far away from the liquid inlet pipeline; the substrate is provided with a through hole 110, the liquid inlet pipeline is arranged in the through hole, and the liquid outlet pipeline is arranged outside the substrate and interconnects the liquid outlet and the through hole with a tubular structure.
Example 2:
the embodiment provides a PCB assembly process with a liquid heat dissipation function, which comprises the following steps:
as shown in figure 1 of the drawings, in which,
(a) providing a tubular structure 101 with a microchannel, and providing a metal microchannel tube; the preparation method of the tubular structure in the step (a) comprises the following steps:
(a1) an upper cover plate with a groove 102 is manufactured through a processing or semiconductor processing technology, the thickness of the cover plate is 100 um-2000 um, the width of the cover plate is 100 um-10 mm, the depth of the groove on the cover plate is 100 um-1900 um, and the width of the groove is 90 um-9 mm;
(a2) manufacturing a carrier plate with a through hole 103 on the other base material by the same processing technology;
(a3) welding the cover plate and the support plate together by a welding process to form a tubular structure with a micro-channel;
as shown in fig. 2, the elbow 104 with the microchannel is fabricated by the same process, so that the elbow can be interconnected with the tubular structure 101;
the material of the tubular structure and the bent pipe can be metal, and can also be materials which are easy to process semiconductors such as silicon, glass and the like;
(b) providing a substrate, manufacturing a TSV conductive column, an RDL, a bonding pad and a first groove on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back surface of the substrate, then arranging a second groove on the back surface of the substrate to enable the top end of the TSV conductive column to be exposed out of the second groove, depositing a passivation layer on the back surface of the substrate, and exposing metal on the top of the TSV conductive column through photoetching and dry etching to obtain an adapter plate;
the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the surface of the substrate through photoetching and dry etching processes;
as shown in fig. 7, TSV holes are formed on the surface of the substrate by photolithography and dry etching processes, wherein the diameter of the TSV hole ranges from 1um to 1000um, and the depth of the TSV hole ranges from 10um to 1000 um;
(b2) depositing an insulating layer on the surface of the substrate, and manufacturing at least one seed layer on the insulating layer;
as shown in fig. 7, an insulating layer of silicon oxide or silicon nitride is deposited over the substrate, or directly thermally oxidized, with the thickness of the insulating layer ranging from 10nm to 100 um; a seed layer is manufactured above the insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b3) electroplating copper, filling the TSV hole with the copper metal to form a TSV conductive column, polishing to remove the copper on the surface of the silicon wafer, and only remaining the copper on the surface of the silicon wafer;
electroplating copper to fill the TSV hole with copper to form a TSV conductive column, and densifying at the temperature of 200-500 ℃ to enable the copper to be more compact; copper chemical mechanical polishing is carried out to remove the copper on the surface of the substrate, so that only copper filling is left on the surface of the substrate; the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the substrate can also be reserved;
(b4) manufacturing a seed layer above the insulating layer, defining the RDL and the position of the bonding pad by photoetching, and electroplating to manufacture the RDL and the bonding pad;
firstly, a seed layer is manufactured above an insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be a layer or a plurality of layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
then, defining the RDL and the position of a bonding pad by photoetching, and electroplating to obtain the RDL and the metal of the bonding pad, wherein the thickness of the metal ranges from 1um to 100um, the metal can be one layer or multiple layers, and the metal can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b5) as shown in fig. 7, a first groove and a third groove are formed on the surface of the silicon wafer by a dry etching process; and performing temporary bonding on the surface of the substrate, thinning the back of the substrate, then manufacturing a through hole on the back of the substrate by using a dry etching process, then continuously manufacturing a second groove on the back of the substrate by using the dry etching process, exposing the top of the TSV conductive column, depositing a passivation layer on the back of the substrate, exposing metal on the top of the TSV by using photoetching and dry etching processes, and removing the temporary bonding to obtain the adapter plate.
(c) As shown in fig. 8, a first chip is embedded in the second groove of the interposer, and a gap between the second groove and the first chip is filled with a colloid, as shown in fig. 9, a tubular structure is embedded in the first groove at the bottom of the first chip, and the tubular structure and the metal micro-channel tube are interconnected, and then the second chip is attached to the surface of the interposer, so as to obtain the PCB assembly process with liquid heat dissipation function.
As shown in fig. 2, the metal microchannel tube comprises a vertically upward liquid inlet pipeline and a horizontal liquid outlet pipeline, wherein a liquid inlet is arranged at one end of the liquid inlet pipeline, which is far away from the liquid outlet pipeline, and a liquid outlet is arranged at one end of the liquid outlet pipeline, which is far away from the liquid inlet pipeline; the substrate sets up the through-hole, the inlet channel sets up in the through-hole, the liquid outlet pipe way sets up in the third recess, interconnects liquid outlet and tubular structure's through-hole.
Example 3:
the embodiment provides a PCB assembly process with a liquid heat dissipation function, which comprises the following steps:
as shown in figure 1 of the drawings, in which,
(a) providing a tubular structure 101 with a microchannel, and providing a metal microchannel tube; the preparation method of the tubular structure in the step (a) comprises the following steps:
(a1) an upper cover plate with a groove 102 is manufactured through a processing or semiconductor processing technology, the thickness of the cover plate is 100 um-2000 um, the width of the cover plate is 100 um-10 mm, the depth of the groove on the cover plate is 100 um-1900 um, and the width of the groove is 90 um-9 mm;
(a2) manufacturing a carrier plate with a through hole 103 on the other base material by the same processing technology;
(a3) welding the cover plate and the support plate together by a welding process to form a tubular structure with a micro-channel;
as shown in fig. 3, the same process is used to fabricate the elbow with micro flow channel, so that the elbow can be interconnected with the tubular structure 101;
the material of the tubular structure and the bent pipe can be metal, and can also be materials which are easy to process semiconductors such as silicon, glass and the like;
(b) providing a substrate, manufacturing a TSV conductive column, an RDL, a bonding pad and a first groove on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back surface of the substrate, then arranging a second groove on the back surface of the substrate to enable the top end of the TSV conductive column to be exposed out of the second groove, depositing a passivation layer on the back surface of the substrate, and exposing metal on the top of the TSV conductive column through photoetching and dry etching to obtain an adapter plate;
the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the surface of the substrate through photoetching and dry etching processes;
as shown in fig. 10, TSV holes are formed on the substrate surface by photolithography and dry etching processes, wherein the diameter of the TSV hole ranges from 1um to 1000um, and the depth ranges from 10um to 1000 um;
(b2) depositing an insulating layer on the surface of the substrate, and manufacturing at least one seed layer on the insulating layer;
as shown in fig. 10, an insulating layer of silicon oxide or silicon nitride is deposited over the substrate, or directly thermally oxidized, with the thickness of the insulating layer ranging from 10nm to 100 um; a seed layer is manufactured above the insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b3) electroplating copper, filling the TSV hole with the copper metal to form a TSV conductive column, polishing to remove the copper on the surface of the silicon wafer, and only remaining the copper on the surface of the silicon wafer;
electroplating copper to fill the TSV hole with copper to form a TSV conductive column, and densifying at the temperature of 200-500 ℃ to enable the copper to be more compact; copper chemical mechanical polishing is carried out to remove the copper on the surface of the substrate, so that only copper filling is left on the surface of the substrate; the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the substrate can also be reserved;
(b4) manufacturing a seed layer above the insulating layer, defining the RDL and the position of the bonding pad by photoetching, and electroplating to manufacture the RDL and the bonding pad;
firstly, a seed layer is manufactured above an insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be a layer or a plurality of layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
then, defining the RDL and the position of a bonding pad by photoetching, and electroplating to obtain the RDL and the metal of the bonding pad, wherein the thickness of the metal ranges from 1um to 100um, the metal can be one layer or multiple layers, and the metal can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b5) as shown in fig. 10, a first groove and a fourth groove are formed on the surface of the silicon wafer by a dry etching process; and performing temporary bonding on the surface of the substrate, thinning the back of the substrate, then manufacturing a second groove on the back of the substrate by using a dry etching process, exposing the top of the TSV conductive column, depositing a passivation layer on the back of the substrate, exposing the metal on the top of the TSV by using photoetching and dry etching processes, and removing the temporary bonding to obtain the adapter plate.
(c) As shown in fig. 11, a first chip is embedded in the second groove of the interposer, and a gap between the second groove and the first chip is filled with a colloid, as shown in fig. 12, a tubular structure is embedded in the first groove at the bottom of the first chip, and the tubular structure and the metal micro-channel tube are interconnected, and then the second chip is attached to the surface of the interposer, so as to obtain the PCB assembly process with liquid heat dissipation function.
As shown in fig. 3, the metal microchannel tube comprises a vertically downward liquid inlet pipeline and a horizontal liquid outlet pipeline, wherein a liquid inlet is arranged at one end of the liquid inlet pipeline, which is far away from the liquid outlet pipeline, and a liquid outlet is arranged at one end of the liquid outlet pipeline, which is far away from the liquid inlet pipeline; as shown in fig. 10, the substrate is provided with a fourth groove, as shown in fig. 12, the liquid inlet pipeline is arranged outside the substrate, and the liquid outlet pipeline is arranged in the fourth groove and interconnects the liquid outlet and the through hole of the tubular structure.
Example 4:
the embodiment provides a PCB assembly process with a liquid heat dissipation function, which comprises the following steps:
as shown in figure 1 of the drawings, in which,
(a) providing a tubular structure 101 with a microchannel, and providing a metal microchannel tube; the preparation method of the tubular structure in the step (a) comprises the following steps:
(a1) an upper cover plate with a groove 102 is manufactured through a processing or semiconductor processing technology, the thickness of the cover plate is 100 um-2000 um, the width of the cover plate is 100 um-10 mm, the depth of the groove on the cover plate is 100 um-1900 um, and the width of the groove is 90 um-9 mm;
(a2) manufacturing a carrier plate with a through hole 103 on the other base material by the same processing technology;
(a3) welding the cover plate and the support plate together by a welding process to form a tubular structure with a micro-channel;
as shown in fig. 3, the same process is used to fabricate the elbow with micro flow channel, so that the elbow can be interconnected with the tubular structure 101;
the material of the tubular structure and the bent pipe can be metal, and can also be materials which are easy to process semiconductors such as silicon, glass and the like;
(b) providing a substrate, manufacturing a TSV conductive column, an RDL, a bonding pad and a first groove on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back surface of the substrate, then arranging a second groove on the back surface of the substrate to enable the top end of the TSV conductive column to be exposed out of the second groove, depositing a passivation layer on the back surface of the substrate, and exposing metal on the top of the TSV conductive column through photoetching and dry etching to obtain an adapter plate;
the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the surface of the substrate through photoetching and dry etching processes;
as shown in fig. 13, TSV holes are formed on the substrate surface by photolithography and dry etching processes, wherein the diameter of the TSV hole ranges from 1um to 1000um, and the depth ranges from 10um to 1000 um;
(b2) depositing an insulating layer on the surface of the substrate, and manufacturing at least one seed layer on the insulating layer;
as shown in fig. 13, an insulating layer of silicon oxide or silicon nitride is deposited over the substrate, or directly thermally oxidized, with the thickness of the insulating layer ranging from 10nm to 100 um; a seed layer is manufactured above the insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b3) electroplating copper, filling the TSV hole with the copper metal to form a TSV conductive column, polishing to remove the copper on the surface of the silicon wafer, and only remaining the copper on the surface of the silicon wafer;
electroplating copper to fill the TSV hole with copper to form a TSV conductive column, and densifying at the temperature of 200-500 ℃ to enable the copper to be more compact; copper chemical mechanical polishing is carried out to remove the copper on the surface of the substrate, so that only copper filling is left on the surface of the substrate; the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the substrate can also be reserved;
(b4) manufacturing a seed layer above the insulating layer, defining the RDL and the position of the bonding pad by photoetching, and electroplating to manufacture the RDL and the bonding pad;
firstly, a seed layer is manufactured above an insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be a layer or a plurality of layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
then, defining the RDL and the position of a bonding pad by photoetching, and electroplating to obtain the RDL and the metal of the bonding pad, wherein the thickness of the metal ranges from 1um to 100um, the metal can be one layer or multiple layers, and the metal can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b5) as shown in fig. 13, a first groove and a fifth groove are formed on the surface of the silicon wafer by a dry etching process; and performing temporary bonding on the surface of the substrate, thinning the back of the substrate, then manufacturing a second groove on the back of the substrate by using a dry etching process, exposing the top of the TSV conductive column, depositing a passivation layer on the back of the substrate, exposing the metal on the top of the TSV by using photoetching and dry etching processes, and removing the temporary bonding to obtain the adapter plate.
(c) As shown in fig. 14, a first chip is embedded in the second groove of the interposer, and a gap between the second groove and the first chip is filled with a colloid, as shown in fig. 15, a tubular structure is embedded in the first groove at the bottom of the first chip, and the tubular structure and the metal micro-channel tube are interconnected, and then the second chip is attached to the surface of the interposer, so as to obtain the PCB assembly process with liquid heat dissipation function.
The metal micro-runner pipe is a straight pipe, a liquid inlet is formed in the lower end of the straight pipe, a liquid outlet is formed in the upper end of the straight pipe, as shown in fig. 14, a fifth groove is formed in the substrate, as shown in fig. 15, the straight pipe is arranged in the fifth groove, and the liquid outlet is connected with the through hole of the tubular structure in an interconnected mode.
According to the PCB assembly process with the liquid heat dissipation function, the micro-channel heat dissipation structure is directly welded below the power chip, so that the heat of the power chip can be directly transferred into the micro-channel through the bottom welding layer, heat exchange is realized, and the heat dissipation capability of the power chip can be greatly improved.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (10)
1. A PCB assembly process with liquid heat dissipation function is characterized in that: the method comprises the following steps:
(a) providing a tubular structure with a microchannel, and providing a metal microchannel tube;
(b) providing a substrate, manufacturing a TSV conductive column, an RDL, a bonding pad and a first groove on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back surface of the substrate, then arranging a second groove on the back surface of the substrate to enable the top end of the TSV conductive column to be exposed out of the second groove, depositing a passivation layer on the back surface of the substrate, and exposing metal on the top of the TSV conductive column through photoetching and dry etching to obtain an adapter plate;
(c) embedding a first chip in the second groove of the adapter plate, filling a colloid in a gap between the second groove and the first chip, embedding the tubular structure into the first groove at the bottom of the first chip, interconnecting the tubular structure and the metal micro-channel tube, and then pasting a second chip on the surface of the adapter plate to obtain the PCB assembly structure with the liquid heat dissipation function.
2. A PCB assembly process with liquid heat dissipation function as claimed in claim 1, wherein: the preparation method of the tubular structure in the step (a) comprises the following specific steps:
(a1) providing an upper cover plate with a groove;
(a2) providing a carrier plate with a through hole;
(a3) the upper cover plate and the carrier plate are welded together by a welding process to form a tubular structure with a micro-channel.
3. A PCB assembly process with liquid heat dissipation function as claimed in claim 2, wherein: upper cover plate thickness is 100um ~2000um, and the width is 100um ~10mm, and the recess degree of depth is 100um ~1900um, and the width is 90um ~9 mm.
4. A PCB assembly process with liquid heat dissipation function as claimed in claim 3, wherein: the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the surface of the substrate through photoetching and dry etching processes;
(b2) depositing an insulating layer on the surface of the substrate, and manufacturing at least one seed layer on the insulating layer;
(b3) electroplating copper, filling the TSV hole with the copper metal to form a TSV conductive column, polishing to remove the copper on the surface of the silicon wafer, and only remaining the copper on the surface of the silicon wafer;
(b4) manufacturing a seed layer above the insulating layer, defining the RDL and the position of the bonding pad by photoetching, and electroplating to manufacture the RDL and the bonding pad;
(b5) manufacturing a first groove on the surface of a silicon wafer by a dry etching process; and performing temporary bonding on the surface of the substrate, thinning the back of the substrate, then manufacturing a second groove on the back of the substrate by using a dry etching process, exposing the top of the TSV conductive column, depositing a passivation layer on the back of the substrate, exposing the metal on the top of the TSV by using photoetching and dry etching processes, and removing the temporary bonding to obtain the adapter plate.
5. A PCB assembly process with liquid heat dissipation function as recited in claim 4, wherein: the metal micro-channel pipe comprises a vertical upward liquid inlet pipeline and a horizontal liquid outlet pipeline, wherein a liquid inlet is arranged at one end, away from the liquid outlet pipeline, of the liquid inlet pipeline, and a liquid outlet is arranged at one end, away from the liquid inlet pipeline, of the liquid outlet pipeline.
6. A PCB assembly process with liquid heat dissipation function as recited in claim 5, wherein: the substrate is provided with a through hole, the liquid inlet pipeline is arranged in the through hole, and the liquid outlet pipeline is arranged outside the substrate and interconnects the liquid outlet and the through hole of the tubular structure.
7. A PCB assembly process with liquid heat dissipation function as recited in claim 5, wherein: the substrate is provided with a through hole and a third groove, the liquid inlet pipeline is arranged in the through hole, and the liquid outlet pipeline is arranged in the third groove and interconnects the liquid outlet and the through hole of the tubular structure.
8. A PCB assembly process with liquid heat dissipation function as recited in claim 4, wherein: the metal micro-channel pipe comprises a vertically downward liquid inlet pipeline and a horizontal liquid outlet pipeline, wherein a liquid inlet is arranged at one end, away from the liquid outlet pipeline, of the liquid inlet pipeline, and a liquid outlet is arranged at one end, away from the liquid inlet pipeline, of the liquid outlet pipeline.
9. A PCB assembly process with liquid heat dissipation function as claimed in claim 8, wherein: the substrate is provided with a fourth groove, the liquid inlet pipeline is arranged outside the substrate, and the liquid outlet pipeline is arranged in the fourth groove and interconnects the liquid outlet and the through hole of the tubular structure.
10. A PCB assembly process with liquid heat dissipation function as recited in claim 4, wherein: the metal micro-runner pipe is a straight pipe, a liquid inlet is formed in the lower end of the straight pipe, a liquid outlet is formed in the upper end of the straight pipe, a fifth groove is formed in the substrate, the straight pipe is arranged in the fifth groove, and the liquid outlet is connected with the through hole of the tubular structure in an interconnected mode.
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| CN113161306A (en) * | 2021-04-15 | 2021-07-23 | 浙江集迈科微电子有限公司 | High-efficiency heat dissipation structure of chip and preparation process thereof |
| CN113411952A (en) * | 2021-06-07 | 2021-09-17 | 中国电子科技集团公司第二十九研究所 | Embedded micro-channel printed circuit board compatible with various blind grooves and preparation method thereof |
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