CN111968919B - Heat dissipation process of radio frequency module - Google Patents
Heat dissipation process of radio frequency module Download PDFInfo
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- CN111968919B CN111968919B CN202010855285.2A CN202010855285A CN111968919B CN 111968919 B CN111968919 B CN 111968919B CN 202010855285 A CN202010855285 A CN 202010855285A CN 111968919 B CN111968919 B CN 111968919B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a radio frequency module heat dissipation process, which comprises the following steps: (a) providing a substrate, forming a side wall bonding pad on the front surface of the substrate, and manufacturing a TSV conductive column, an RDL and an interconnection bonding pad; (b) forming a side wall bonding pad on the back surface of the substrate to form a second substrate; (c) dry etching the groove on the back surface of the substrate to expose the metal on the top of the TSV conductive column to form a third substrate; (d) embedding a chip in the groove on the back surface of the third substrate, and manufacturing an RDL and an interconnection bonding pad on the back surface of the third substrate to form a fourth substrate; (e) and providing a PCB and a heat dissipation pipe, cutting the fourth substrate into a single module, mounting the heat dissipation pipe on the back of the module, mounting a side wall bonding pad of the module and an interconnection bonding pad on one side of the PCB as patches, and filling circulating liquid in the heat dissipation pipe for heat dissipation to obtain the radio frequency module with heat dissipation capability. The radio frequency module heat dissipation process disclosed by the invention can realize a high-reliability heat dissipation function and is also beneficial to stable welding of the module.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a radio frequency module heat dissipation process.
Background
The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.
However, for a high-frequency micro-system, the area of the antenna array is smaller and smaller, and the distance between the antennas needs to be kept within a certain range, so that the whole module has excellent communication capability. However, for an analog device chip such as a radio frequency chip, the area of the analog device chip cannot be reduced by the same magnification as that of a digital chip, so that a radio frequency micro system with a very high frequency will not have enough area to simultaneously place the PA/LNA, and the PA/LNA needs to be stacked or vertically placed.
For a vertically placed radio frequency module, a conventional process adopts a process of embedding a micro channel in a semiconductor to solve the problem of heat dissipation, but the process is complex and the reliability is poor.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a radio frequency module heat dissipation process which is high in reliability, good in heat dissipation performance and simple in process. The technical scheme adopted by the invention is as follows:
a radio frequency module heat dissipation process comprises the following steps:
(a) providing a substrate, wherein the substrate is provided with a corresponding substrate front side and a corresponding substrate back side, manufacturing a side wall interconnection groove on the substrate front side in a photoetching and dry etching mode, filling metal into the side wall interconnection groove to form a side wall bonding pad, and then manufacturing a TSV conductive column, a RDL (remote direct memory link) and an interconnection bonding pad on the substrate front side to form a first substrate;
(b) performing temporary bonding on the front surface of the substrate, thinning the back surface of the substrate, then manufacturing a side wall interconnection groove on the back surface of the substrate, filling metal into the side wall interconnection groove to form a side wall bonding pad, and forming a second substrate;
(c) dry etching the groove on the back surface of the substrate to expose the back surface of the TSV conductive column, depositing a passivation layer, and exposing the top metal of the TSV conductive column through photoetching and dry etching processes to form a third substrate;
(d) embedding a chip in the groove on the back of the third substrate, filling a gap between the chip and the groove, and then manufacturing an RDL (radio frequency identification) and an interconnection bonding pad on the back of the substrate to form a fourth substrate;
(e) providing a PCB and a heat dissipation guide pipe, detaching the temporary bonding on the front surface of the fourth substrate, cutting the fourth substrate into a single module, attaching the heat dissipation guide pipe with a micro-flow control on the back surface of the module, taking the heat dissipation guide pipe as a support, taking a side wall bonding pad of the module and an interconnection bonding pad on one side of the PCB as patches, and filling circulating liquid into the heat dissipation guide pipe for heat dissipation to obtain the radio frequency module with heat dissipation capability.
Preferably, in the radio frequency module heat dissipation process, the step (a) specifically includes:
(a1) forming a side wall interconnection groove on the substrate, depositing a first insulating layer on the substrate, manufacturing a first seed layer above the first insulating layer, electroplating copper to enable the side wall interconnection groove to be filled with copper to form a side wall bonding pad, and removing the copper on the surface of the substrate to enable only the copper of the side wall interconnection groove to be left on the surface of the substrate;
(a2) manufacturing TSV deep holes in the front side of the substrate through photoetching and etching processes;
(a3) depositing a second insulating layer on the front surface of the substrate, and manufacturing a second seed layer on the second insulating layer;
(a4) electroplating copper to fill the TSV deep holes with the copper, removing the copper on the surface of the substrate, and enabling only the copper in the TSV deep holes to remain on the surface of the substrate to form a TSV conductive column;
(a5) and manufacturing a third sub-layer on the second insulating layer, defining the RDL and the bonding pad position by photoetching, and manufacturing the RDL and the interconnection bonding pad by electroplating.
Preferably, in the radio frequency module heat dissipation process, the first insulating layer and the second insulating layer in the step (a) are both made of silicon oxide or silicon nitride, and the thickness is 0.01um to 100 um; the thicknesses of the first seed layer, the second seed layer and the third seed layer are 0.001-100 um, and the materials of the first seed layer, the second seed layer and the third seed layer are selected from one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel; the length and width of the interconnected grooves on the side wall are 1um to 1000um, and the depth is 10um to 1000 um.
Preferably, the radio frequency module heat dissipation process, wherein the groove depth of step (c) is 10 um-1000 um.
Preferably, in the radio frequency module heat dissipation process, the interconnection pad is made of one material selected from titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
Preferably, in the radio frequency module heat dissipation process, the heat dissipation pipe in the step (e) includes a first straight pipe, a transition pipe and a second straight pipe, the top end of the first straight pipe is closed, and the top end of the second straight pipe is provided with a liquid inlet and outlet.
Preferably, in the radio frequency module heat dissipation process, the heat dissipation conduit is a straight pipe, a liquid inlet and a liquid outlet are formed in the top end of the straight pipe, and the bottom end of the straight pipe is closed.
Preferably, radio frequency module heat dissipation technology, wherein, heat dissipation pipe thickness is 10um ~ 10000um, set up the microchannel in the heat dissipation pipe, 1um ~ 1000um of microchannel thickness, the inside circulating line that forms of heat dissipation pipe.
Preferably, in the radio frequency module heat dissipation process, the other side of the PCB board in the step (e) is attached with an antenna.
The invention has the advantages that: according to the radio frequency module heat dissipation technology, the independent metal heat dissipation micro-channel liquid cooling groove is formed in the bottom of the vertically placed module, and the micro-channel liquid cooling groove is fixed with the PCB, so that the high-reliability heat dissipation function can be realized, and stable welding of the module can be facilitated.
Drawings
Fig. 1 is a schematic diagram of forming a sidewall interconnection groove on the front surface of a substrate according to the present invention.
Fig. 2 is a schematic illustration of depositing a first insulating layer and a first seed layer on a substrate of the present invention.
Fig. 3 is a schematic view of a second substrate of the present invention.
Fig. 4 is a schematic view of a third substrate of the present invention.
Fig. 5 is a schematic view of a fourth substrate of the present invention.
FIG. 6 is a schematic view of a module backside mounted heat dissipation tube according to the present invention.
FIG. 7 is a schematic view of another structure of heat dissipation pipe mounted on the back surface of the module according to the present invention.
Fig. 8 is a schematic view of a radio frequency module with heat dissipation capability according to the present invention.
Fig. 9 is a schematic view of a radio frequency module with another structure having heat dissipation capability according to the present invention.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
The first embodiment;
the radio frequency module heat dissipation process provided by the embodiment comprises the following steps:
(a) providing a substrate, wherein the substrate is provided with a corresponding substrate front side and a corresponding substrate back side, manufacturing a side wall interconnection groove on the substrate front side in a photoetching and dry etching mode, filling metal into the side wall interconnection groove to form a side wall bonding pad, and then manufacturing a TSV conductive column, a RDL (remote direct memory link) and an interconnection bonding pad on the substrate front side to form a first substrate;
the step (a) is specifically as follows:
(a1) forming a side wall interconnection groove on the front surface of a substrate, wherein the length and width of the groove are in the range of 1um to 1000um and the depth of the groove is in the range of 10um to 1000um as shown in fig. 1, depositing a first insulating layer on the substrate, manufacturing a first seed layer above the first insulating layer, electroplating copper to fill the side wall interconnection groove with the copper to form a side wall bonding pad, densifying at the temperature of 200-500 ℃ to ensure that the copper is denser, removing the copper on the surface of the substrate, only leaving the copper in the side wall interconnection groove on the surface of the substrate, removing the first insulating layer on the surface of the substrate by using a dry etching or wet etching process, and keeping the first insulating layer on the surface of the substrate; the first insulating layer is silicon oxide or silicon nitride, or is directly thermally oxidized, and the thickness of the insulating layer ranges from 10nm to 100 um; a first seed layer is manufactured above the insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the first seed layer ranges from 1nm to 100um, the first seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(a2) as shown in fig. 3, through photoetching and etching processes, making TSV deep holes on the front surface of the substrate, wherein the diameter range of the deep holes is 1 um-1000 um, and the depth is 10 um-1000 um;
(a3) depositing a second insulating layer on the front surface of the substrate, and manufacturing a second seed layer on the second insulating layer;
the second insulating layer is silicon oxide or silicon nitride, or is directly thermally oxidized, and the thickness of the insulating layer ranges from 10nm to 100 um; a second seed layer is manufactured above the second insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(a4) electroplating copper 104 to fill the TSV deep holes with copper, densifying at 200-500 ℃ to make the copper more compact, removing the copper on the surface of the silicon wafer, and removing the copper on the surface of the substrate to make only the copper in the TSV deep holes left on the surface of the substrate form TSV conductive columns; electroplating copper 104, wherein the second insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the silicon chip can also be reserved;
(a5) and manufacturing a third sub-layer on the second insulating layer, defining the RDL and the bonding pad position by photoetching, and manufacturing the RDL and the interconnection bonding pad by electroplating.
Firstly, a third sublayer is manufactured above the second insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the third sublayer ranges from 1nm to 100um, the third sublayer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
then, defining the RDL and the position of a bonding pad by photoetching, and electroplating to obtain the RDL and bonding pad metal 105, wherein the thickness of the metal ranges from 1um to 100um, the metal can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b) performing temporary bonding on the front surface of the substrate, thinning the back surface of the substrate, then manufacturing a side wall interconnection groove on the back surface of the substrate, filling metal into the side wall interconnection groove to form a side wall bonding pad, and forming a second substrate;
as shown in fig. 3, the front side of the substrate is temporarily bonded, then the back side of the wafer is thinned, and a sidewall interconnection groove is formed on the back side of the substrate by photolithography and etching processes, wherein the length and width of the groove are in the range of 1um to 1000um, and the depth of the groove is in the range of 10um to 1000 um;
depositing an insulating layer such as silicon oxide or silicon nitride on the back surface of the substrate, or directly thermally oxidizing, wherein the thickness of the insulating layer is in the range of 10nm to 100 um; a seed layer is manufactured above the insulating layer through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
electroplating copper to fill the side wall interconnection groove with copper metal, and densifying at 200-500 ℃ to make the copper denser; copper chemical mechanical polishing is carried out to remove the copper on the surface of the substrate, so that only copper filling is left on the surface of the substrate; the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the silicon chip can also be reserved;
(c) dry etching the groove on the back surface of the substrate to expose the back surface of the TSV conductive column, depositing a passivation layer, and exposing the top metal of the TSV conductive column through photoetching and dry etching processes to form a third substrate;
as shown in fig. 4, the groove 106 is dry etched, and the depth of the groove ranges from 10um to 1000 um; enabling the back surface of the TSV conductive column to expose, depositing a silicon oxide or silicon nitride insulating layer, and then exposing the metal on the top of the TSV through photoetching and dry etching processes;
(d) embedding a chip in the groove on the back of the third substrate, filling a gap between the chip and the groove, and then manufacturing an RDL (radio frequency identification) and an interconnection bonding pad on the back of the substrate to form a fourth substrate;
as shown in fig. 5, the chip 107 is embedded in the groove on the back surface of the third substrate, and the bottom of the chip is fixed by hot melt adhesive.
Filling a gap between the chip and the groove by using a glue spraying process, and then manufacturing a seed layer above the insulating layer by using a physical sputtering, magnetron sputtering or evaporation process, wherein the thickness of the seed layer ranges from 1nm to 100um, the seed layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
then, photoetching and defining the RDL and the position of a bonding pad on the back surface of the substrate, and electroplating to prepare the RDL and an interconnection bonding pad, wherein the thickness of the metal ranges from 1um to 100um, the metal can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(e) providing a PCB and a heat dissipation guide pipe, detaching the temporary bonding on the front surface of the fourth substrate, cutting the fourth substrate into a single module, attaching the heat dissipation guide pipe with a micro-flow control on the back surface of the module, taking the heat dissipation guide pipe as a support, taking a side wall bonding pad of the module and an interconnection bonding pad on one side of the PCB as patches, and filling circulating liquid into the heat dissipation guide pipe for heat dissipation to obtain the radio frequency module with heat dissipation capability.
As shown in fig. 6, the temporary bonding on the front side of the fourth substrate is removed, the fourth substrate is cut into a single module, and the back side of the module is attached with the heat dissipation conduit with the micro-fluidic circuit;
the heat dissipation conduit 108 is made of copper or metal with thermal expansion coefficient equivalent to that of silicon, the thickness of the heat dissipation conduit is 10um to 10000um, a micro channel 109 is arranged in the heat dissipation conduit, and the thickness of the micro channel is 1um to 1000 um; the heat dissipation guide pipe comprises a first straight pipe, a transition pipe and a second straight pipe, wherein the top end of the first straight pipe is closed, the top end of the second straight pipe is provided with a liquid inlet and outlet, and a circulating pipeline is formed inside the second straight pipe;
as shown in fig. 7, the heat dissipation conduit is a straight conduit, the top end of the straight conduit is provided with a liquid inlet and outlet, the bottom end of the straight conduit is closed, heat conduction liquid enters and flows out from a top channel, and a circulation pipeline is formed inside the heat conduction liquid.
As shown in fig. 8 or 9, the heat dissipation pipe is used as a support, the pads on the side wall of the module and the interconnection pads on one side of the PCB are used as patches, the antenna is attached to the other side of the PCB, and the heat dissipation pipe is filled with circulating liquid for heat dissipation, so as to obtain the radio frequency module with heat dissipation capability.
According to the radio frequency module heat dissipation technology, the independent metal heat dissipation micro-channel liquid cooling groove is formed in the bottom of the vertically placed module, and the micro-channel liquid cooling groove is fixed with the PCB, so that the high-reliability heat dissipation function can be realized, and stable welding of the module can be facilitated.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (9)
1. A radio frequency module heat dissipation process is characterized by comprising the following steps:
(a) providing a substrate, wherein the substrate is provided with a corresponding substrate front side and a corresponding substrate back side, manufacturing a side wall interconnection groove on the substrate front side in a photoetching and dry etching mode, filling metal into the side wall interconnection groove to form a side wall bonding pad, and then manufacturing a TSV conductive column, a RDL (remote direct memory link) and an interconnection bonding pad on the substrate front side to form a first substrate;
(b) performing temporary bonding on the front surface of the substrate, thinning the back surface of the substrate, then manufacturing a side wall interconnection groove on the back surface of the substrate, filling metal into the side wall interconnection groove to form a side wall bonding pad, and forming a second substrate;
(c) dry etching the groove on the back surface of the substrate to expose the back surface of the TSV conductive column, depositing a passivation layer, and exposing the top metal of the TSV conductive column through photoetching and dry etching processes to form a third substrate;
(d) embedding a chip in the groove on the back of the third substrate, filling a gap between the chip and the groove, and then manufacturing an RDL (radio frequency identification) and an interconnection bonding pad on the back of the substrate to form a fourth substrate;
(e) providing a PCB and a heat dissipation guide pipe, detaching the temporary bonding on the front surface of the fourth substrate, cutting the fourth substrate into a single module, attaching the heat dissipation guide pipe with a micro-flow control on the back surface of the module, taking the heat dissipation guide pipe as a support, taking a side wall bonding pad of the module and an interconnection bonding pad on one side of the PCB as patches, and filling circulating liquid into the heat dissipation guide pipe for heat dissipation to obtain the radio frequency module with heat dissipation capability.
2. The radio frequency module heat dissipation process of claim 1, wherein the step (a) specifically comprises:
(a1) forming a side wall interconnection groove on the substrate, depositing a first insulating layer on the substrate, manufacturing a first seed layer above the first insulating layer, electroplating copper to enable the side wall interconnection groove to be filled with copper to form a side wall bonding pad, and removing the copper on the surface of the substrate to enable only the copper of the side wall interconnection groove to be left on the surface of the substrate;
(a2) manufacturing TSV deep holes in the front side of the substrate through photoetching and etching processes;
(a3) depositing a second insulating layer on the front surface of the substrate, and manufacturing a second seed layer on the second insulating layer;
(a4) electroplating copper to fill the TSV deep holes with the copper, removing the copper on the surface of the substrate, and enabling only the copper in the TSV deep holes to remain on the surface of the substrate to form a TSV conductive column;
(a5) and manufacturing a third sub-layer on the second insulating layer, defining the RDL and the bonding pad position by photoetching, and manufacturing the RDL and the interconnection bonding pad by electroplating.
3. The radio frequency module heat dissipation process of claim 2, wherein the first insulating layer and the second insulating layer in step (a) are made of silicon oxide or silicon nitride, and the thickness is 0.01um to 100 um; the thicknesses of the first seed layer, the second seed layer and the third seed layer are 0.001-100 um, and the materials of the first seed layer, the second seed layer and the third seed layer are selected from one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel; the length and width of the interconnected grooves on the side wall are 1um to 1000um, and the depth is 10um to 1000 um.
4. The radio frequency module heat dissipation process of claim 1, wherein the depth of the recess in step (c) is 10um to 1000 um.
5. The RF module heat dissipation process of claim 1 or 2, wherein the interconnection pad is made of a material selected from the group consisting of Ti, Cu, Al, Ag, Pd, Au, Tl, Sn, and Ni.
6. The rf module heat dissipation process of claim 1, wherein the heat dissipation conduit of step (e) comprises a first straight tube, a transition tube and a second straight tube, wherein the top end of the first straight tube is closed, and the top end of the second straight tube is provided with a liquid inlet and outlet.
7. The radio frequency module heat dissipation process of claim 1, wherein the heat dissipation conduit is a straight tube, a liquid inlet and outlet is disposed at a top end of the straight tube, and a bottom end of the straight tube is closed.
8. The RF module heat dissipation process of claim 6 or 7, wherein the heat dissipation conduit has a thickness of 10um to 10000um, and a micro channel is disposed in the heat dissipation conduit, and has a thickness of 1um to 1000um, and a circulation channel is formed inside the heat dissipation conduit.
9. The radio frequency module heat dissipation process of claim 1, wherein step (e) mounts an antenna on the other side of the PCB.
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| CN101872826A (en) * | 2010-05-28 | 2010-10-27 | 符建 | Liquid metal heat radiation based high-power LED light source of threaded connection structure |
| CN102487052A (en) * | 2010-12-03 | 2012-06-06 | 北京有色金属研究总院 | Composite material packaging assembly with integration of chip substrate, heat sink and substrate and manufacture method thereof |
| CN110038655A (en) * | 2019-05-20 | 2019-07-23 | 徐州昊洋生物科技有限公司 | A kind of microfluidic control chip and system |
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| CN101872826A (en) * | 2010-05-28 | 2010-10-27 | 符建 | Liquid metal heat radiation based high-power LED light source of threaded connection structure |
| CN102487052A (en) * | 2010-12-03 | 2012-06-06 | 北京有色金属研究总院 | Composite material packaging assembly with integration of chip substrate, heat sink and substrate and manufacture method thereof |
| CN110038655A (en) * | 2019-05-20 | 2019-07-23 | 徐州昊洋生物科技有限公司 | A kind of microfluidic control chip and system |
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