CN112838011B - Heat dissipation chip and manufacturing method thereof - Google Patents
Heat dissipation chip and manufacturing method thereof Download PDFInfo
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- CN112838011B CN112838011B CN202110386144.5A CN202110386144A CN112838011B CN 112838011 B CN112838011 B CN 112838011B CN 202110386144 A CN202110386144 A CN 202110386144A CN 112838011 B CN112838011 B CN 112838011B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The invention provides a heat dissipation chip and a manufacturing method thereof, comprising a first substrate, a second substrate and an adapter plate, wherein the first substrate comprises a metal column and a groove exposing the second end of the metal column, a composite structure is formed by bonding the first substrate and the second substrate, an inverted chip to be dissipated and the first end of the metal column have a preset distance, as a heating point of the chip is positioned at the upper part of the chip, the inverted chip can effectively shorten the distance between the first end of the metal column and the heating point at the upper part of the chip, and as the metal has good heat conduction capability, the heat of the heating point of the chip can be quickly conducted to the first substrate through the metal column, and through a heat dissipation micro-channel, the heat conducted by the metal column can be subjected to good heat exchange with a heat dissipation medium in the heat dissipation micro-channel to realize effective dissipation of the heat, a cavity does not need to be formed on the front surface of the chip, thereby reducing the process complexity and preparing a heat dissipation chip with high heat dissipation performance.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a heat dissipation chip and a manufacturing method thereof.
Background
The millimeter wave radio frequency technology is rapidly developed in the semiconductor industry, is widely applied to the fields of high-speed data communication, automobile radars, airborne missile tracking systems, space spectrum detection and imaging and the like, and becomes a new industry. The new application puts new requirements on the electrical performance, compact structure and system reliability of the product, and the wireless transmitting and receiving system cannot be integrated into the same chip (SOC) at present, so that different chips including a radio frequency unit, a filter, a power amplifier and the like need to be integrated into a separate system to realize the functions of transmitting and receiving signals.
For some high-power chips, such as rf chips, it is necessary to conduct the heat of the chip in time, otherwise the entire integrated module is damaged. However, the thickness of the chip is usually more than 200 μm, and the active area of the chip, i.e. the heat generating spot, is usually located on the upper portion of the chip, so that the thicker substrate in the chip can hinder the heat dissipation of the chip. In order to solve the problem of heat dissipation of the chip, the conventional heat dissipation method of the chip includes the following several methods: one method is that the chip is thinned and is attached on the copper embedded surface of the PCB, and the heat of the chip is transmitted to the terminal in time by using copper metal; one is through setting up heat dissipation channel in integrated module bottom to pass through the heat medium with the heat of chip and realize thermal conduction, and is further, in order to let the heat medium more be close the point that generates heat of chip, some technologies still can be at chip bottom sculpture miniflow way, in order to let integrated module's heat dissipation channel with the miniflow way interconnection of chip, make heat dissipation medium can be faster carry out the heat exchange with the point that generates heat of chip, in order to improve the radiating efficiency. For example, in CN110010570A, the heat dissipation of the chip is achieved by aligning the chip, and then simultaneously providing cavities on the front and back surfaces of the chip, so as to achieve heat dissipation of the chip through the heat dissipation medium located in the cavities on the front/back surfaces of the chip. In the prior art, in the process of thinning a chip or etching the bottom of the chip to form a micro channel of the chip, the chip needs to be supported, so that when the chip is thinned or the micro channel of the chip is formed in the chip, the micro channel of the chip cannot be infinitely close to a heating point of the chip, for example, a material with a thickness of about 50 μm is generally reserved in the chip to be used as a supporting layer of the chip to support the strength of the chip and avoid the defects of fragments and the like. Therefore, when heat is transferred, the heat of the heat generating spot of the chip can be conducted through the reserved material layer with the thickness of 50 μm, such as silicon, silicon carbide or gallium arsenide, and then can exchange heat with the heat dissipating medium in the micro channel, so that the heat dissipating performance of the chip is greatly reduced.
Therefore, it is necessary to provide a novel heat dissipation chip and a method for manufacturing the same.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a heat dissipation chip and a method for manufacturing the same, which are used to solve the problem of heat dissipation of the prior chip.
In order to achieve the above and other related objects, the present invention provides a method for manufacturing a heat dissipation chip, comprising the steps of:
providing a first substrate, and forming a metal column in the first substrate, wherein the metal column comprises a first end and an opposite second end;
providing a second substrate, and bonding the first substrate and the second substrate to form a composite structure;
thinning the second substrate, wherein the second substrate comprises an inverted chip to be cooled, and the inverted chip has a preset distance from the first end of the metal column;
patterning the first substrate to form a groove, wherein the groove exposes the second end of the metal column;
and providing an adapter plate with a through hole, bonding the composite structure and the adapter plate, and communicating the through hole with the groove to form a heat dissipation micro-channel.
Optionally, the chip is already located in the second substrate before thinning the second substrate, or the chip is formed on the surface of the second substrate by bonding after thinning the second substrate.
Optionally, the bonding method of the first substrate and the second substrate includes one of thermocompression bonding, surface activation bonding, anodic bonding, and gluing; the bonding method of the composite structure and the adapter plate comprises one of hot-press bonding, surface activation bonding, anodic bonding and gluing.
Optionally, a passivation layer is disposed between the second substrate and the first substrate, and the passivation layer includes one or a combination of a silicon oxide layer and a silicon nitride layer.
Optionally, the preset distance is 10 μm to 700 μm; the chip is positioned right above the metal column which is correspondingly arranged; the depth of the groove is 100-500 mu m; the height of the metal column exposed by the groove is 10-300 mu m.
Optionally, the heat dissipation chip includes a liquid cooling heat dissipation chip or an air cooling heat dissipation chip.
The present invention also provides a heat dissipating chip, including:
the first substrate is provided with a metal column and a groove, the metal column comprises a first end and an opposite second end, and the groove exposes the second end of the metal column;
the second substrate is bonded with the first substrate to form a composite structure and comprises an inverted chip to be radiated, and the inverted chip has a preset distance from the first end of the metal column;
the adapter plate is bonded with the composite structure and provided with a through hole, and the through hole is communicated with the groove to form a heat dissipation micro-channel.
Optionally, the preset distance is 10 μm to 700 μm; the chip is positioned right above the metal column which is correspondingly arranged; the depth of the groove is 100-500 mu m; the height of the metal column exposed by the groove is 10-300 mu m.
Optionally, a passivation layer is disposed between the second substrate and the first substrate, and the passivation layer includes one or a combination of a silicon oxide layer and a silicon nitride layer.
Optionally, the heat dissipation chip includes a liquid cooling heat dissipation chip or an air cooling heat dissipation chip.
As mentioned above, the heat dissipation chip and the manufacturing method thereof of the invention comprises a first substrate, a second substrate and an adapter plate, wherein the first substrate comprises a metal column and a groove exposing the second end of the metal column, a composite structure is formed by bonding the first substrate and the second substrate, and the inverted chip to be dissipated has a preset distance with the first end of the metal column, wherein the heat generating point of the chip is positioned at the upper part of the chip, so that the inverted chip of the invention can effectively shorten the distance between the first end of the metal column and the heat generating point at the upper part of the chip, and the heat of the heat generating point of the chip can be rapidly conducted to the first substrate through the metal column due to the good heat conduction capability of the metal, and the heat conducted by the metal column can be well exchanged with the heat dissipation medium in the heat dissipation micro flow channel through the groove in the first substrate and the through hole in the adapter plate, therefore, the invention can realize good heat dissipation of the chip without forming a cavity on the front surface of the chip, can reduce the complexity of the process and can prepare the heat dissipation chip with high heat dissipation performance.
Drawings
Fig. 1 is a schematic view showing a process flow for preparing a heat dissipation chip according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram illustrating a TSV blind hole formed in a first substrate according to an embodiment of the invention.
Fig. 3 is a schematic structural diagram illustrating a metal pillar formed in a first substrate according to an embodiment of the invention.
Fig. 4 is a schematic structural diagram of a second substrate provided in an embodiment of the invention.
Fig. 5 is a schematic structural diagram illustrating a chip to be heat-dissipated after being formed in the embodiment of the invention.
Fig. 6 is a schematic structural diagram illustrating a first substrate with a groove formed therein according to an embodiment of the invention.
Fig. 7 is a schematic structural view illustrating the second end of the metal pillar exposed according to the embodiment of the invention.
Fig. 8 is a schematic structural diagram of an interposer with through holes according to an embodiment of the present invention.
Fig. 9 is a schematic structural diagram of a heat dissipating chip formed in an embodiment of the invention.
Description of the element reference numerals
100-a first substrate; 101-TSV blind holes; 102-an insulating layer; 103-metal posts; 104-a groove; 200-a second substrate; 201-a passivation layer; 202-chip; 300-an adapter plate; 301-a through hole; 400-a heat-dissipating medium; h-a preset distance; h-height; d-depth.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed freely, and the layout of the components may be more complicated.
Fig. 1 is a schematic diagram of a process flow for manufacturing a heat dissipation chip in this embodiment, and fig. 2 to 9 show specific manufacturing processes of the heat dissipation chip as structural diagrams of steps in the process of manufacturing the heat dissipation chip.
Referring to fig. 2 and 3, a first substrate 100 is provided, and a metal pillar 103 is formed in the first substrate 100, where the metal pillar 103 includes a first end and an opposite second end.
First, referring to fig. 2, the first base 100 may be provided by a silicon wafer, a silicon-on-insulator (SOI), etc., and the specific type of the first base 100 is not limited herein, and the silicon wafer is merely used as an example in this embodiment.
Next, a TSV blind hole 101 is formed in the first substrate 100, wherein a dry etching method, a wet etching method, a laser etching method, or the like may be used as a method for forming the TSV blind hole 101, and a specific forming method is not limited herein. The diameter of the TSV blind hole 101 may be in a range of 1 μm to 1000 μm, such as a value in any range of 10 μm, 50 μm, 100 μm, 500 μm, 1000 μm, etc., the depth of the TSV blind hole 101 may be in a range of 10 μm to 1000 μm, such as a value in any range of 10 μm, 50 μm, 100 μm, 500 μm, 1000 μm, etc., and the number, distribution, shape, size, etc. of the TSV blind hole 101 may be selected according to specific needs, and is not limited herein.
Next, referring to fig. 3, after the TSV blind via 101 is formed, an insulating layer 102 may be formed on an inner wall of the TSV blind via 101, wherein a method for forming the insulating layer 102 may include processes such as atomic layer deposition, chemical vapor deposition, sputtering, spin coating, or direct thermal oxidation, and may be specifically selected as required. The material of the insulating layer 102 may be silicon oxide, silicon nitride, etc., and the insulating layer 102 may be a single layer or two or more layers, wherein the thickness of the insulating layer 102 may be in a range of 10nm to 100 μm, such as a value in any range of 10nm, 10 μm, 25 μm, 50 μm, 75 μm, 100 μm, etc., and the selection of the specific material and thickness of the insulating layer 102 is not limited herein.
Next, a seed layer (not shown) may be formed on the insulating layer 102 by physical sputtering, magnetron sputtering, or evaporation process, and the seed layer may be made of, for example, titanium metal, copper metal, aluminum metal, silver metal, palladium metal, gold metal, thallium metal, tin metal, nickel metal, and the like. The thickness of the seed layer can be 1 nm-100 μm, such as 1nm, 10nm, 50nm, 100nm, 10 μm, 50 μm, 100 μm and any range value, and the seed layer can be a single layer or a multilayer structure, and can be selected according to requirements.
Next, the metal pillar 103 is formed to fill the TSV blind hole 101, wherein in this embodiment, the seed layer is provided in the TSV blind hole 101, so that the method for forming the metal pillar 103 may adopt an electroplating method, that is, the metal pillar 103 may be formed by a bottom-up electroplating method, but the method for forming the metal pillar 103 is not limited thereto. In this embodiment, the metal pillar 103 is made of copper metal, but conductive materials such as gold metal, aluminum metal, silver metal, etc. may be used according to the requirement, and are not limited herein.
Further, heating at 200-500 deg.C, such as 200 deg.C, 400 deg.C, 500 deg.C, etc., can be included to densify the metal pillars 103, thereby improving electrical performance.
Next, the metal layer on the surface of the first substrate 100 may be removed by a polishing method to expose the first end of the metal pillar 103, wherein the polishing method may be one or a combination of a mechanical polishing method and a CMP method, for example.
Then, the insulating layer 102 on the surface of the first substrate 100 may be removed by a dry etching process or a wet etching process, although the insulating layer 102 may also be remained and may be specifically selected according to needs.
Referring to fig. 4, a second substrate 200 is provided, and the first substrate 100 and the second substrate 200 are bonded to form a composite structure.
Specifically, the second substrate 200 may include a wafer with active devices or a silicon wafer, and the like, which is not limited herein, and may be selected according to the needs, in this embodiment, the second substrate 200 is a silicon wafer with a passivation layer 201 on a surface thereof, but is not limited thereto, and the passivation layer 201 may include one or a combination of a silicon oxide layer and a silicon nitride layer.
As an example, the bonding method of the first substrate 100 and the second substrate 200 may include one of thermocompression bonding, surface activation bonding, anodic bonding, and gluing. In this embodiment, the bonding method of the first substrate 100 and the second substrate 200 adopts thermal compression bonding to form the composite structure with good bonding force, but the bonding method is not limited thereto.
Referring to fig. 5, the second substrate 200 is thinned, the second substrate 200 includes an inverted chip 202 to be heat-dissipated, and a predetermined distance h exists between the inverted chip 202 and the first end of the metal pillar 103, where the predetermined distance h may be 10 μm to 700 μm, such as 10 μm, 20 μm, 50 μm, 100 μm, 200 μm, 700 μm, and the like.
Specifically, in the embodiment, the first substrate 100 and the second substrate 200 are bonded, and then the second substrate 200 is thinned, so that the preset distance h is small in the thinning process, the risk of fragments is avoided, and the preset distance h is small, so that the inverted chip 202 and the first end of the metal column 103 are small in distance, and the heat dissipation effect of the metal column 103 can be improved.
As an example, the chip 202 is already located in the second substrate 200 before the second substrate 200 is thinned, or the chip 202 is formed on the surface of the second substrate 200 by bonding after the second substrate 200 is thinned.
Specifically, when the chip 202 is disposed in the second base 200 before the thinning process, for example, the second base 200 may be regarded as a radio frequency chip wafer, that is, the second base 200 may include a thicker substrate, the chip 202 disposed on the substrate, and an interconnection layer disposed on a surface of the chip 202. After the second substrate 200 is bonded to the first substrate 100, the second substrate 200 may be regarded as being inverted, so that the predetermined distance h between the heat generating spot in the second substrate 200, i.e., the chip 202 located on the upper portion of the second substrate 200, and the first end of the metal pillar 103 may be reduced to facilitate heat transfer. After the thinning process, such as CMP, mechanical grinding, etc., the thicker substrate in the second substrate 200 is removed to expose the interconnection layer, which can facilitate the subsequent electrical connection. Preferably, a protective layer is reserved on the surface of the chip 202 to avoid damage to the chip 202 by a subsequent process, but is not limited thereto. In another embodiment, the second substrate 200 may not include the chip 202, and after the second substrate 200 is thinned, the chip 202 is inversely bonded to the thinned second substrate 200 by using a die bonding process, where a bonding method of the chip 202 is not limited.
As an example, the chip 202 is preferably located right above the corresponding metal pillar 103, so as to shorten the heat transmission distance and improve the heat dissipation effect.
As an example, the method for thinning the second substrate 200 may include one or a combination of a mechanical grinding method, a CMP method, and an etching method, which may be selected according to needs.
Referring to fig. 6 and 7, the first substrate 100 is patterned to form a recess 104, and the recess 104 exposes the second end of the metal pillar 103.
By way of example, the depth D of the groove 104 is 100-500 μm; the height H of the metal column 103 exposed by the groove 104 is 10-300 μm.
Specifically, the method for forming the groove 104 by patterning the first substrate 100 may include an etching method, wherein the depth D of the formed groove 104 may be 100 μm, 200 μm, 500 μm, or the like. The insulating layer 102 exposed on the surface of the metal pillar 103 in the groove 104 is removed, and a wet etching method may be used to expose the second end of the metal pillar 103, so as to facilitate heat transfer through the metal pillar 103. Wherein, the height H of the exposed metal pillar 103 can be 10 μm, 50 μm, 100 μm, 300 μm, etc.
Referring to fig. 8 and 9, an interposer 300 having a through hole 301 is provided, and the composite structure and the interposer 300 are bonded, and the through hole 301 is communicated with the groove 104 to form a heat dissipation micro channel.
Specifically, the interposer 300 may be a silicon interposer, a glass interposer, etc., and the specific type is not limited herein, and in the embodiment, the interposer 300 is a silicon interposer, but is not limited thereto. The step of manufacturing the interposer 300 having the through hole 301 may include:
providing an adapter plate 300, and forming a TSV hole on the adapter plate 300 by using a photolithography method, wherein the diameter of the TSV hole can be in a range of 10 μm to 10000 μm, such as 10 μm, 50 μm, 100 μm, 1000 μm, 10000 μm, and the like, and the depth can be in a range of 10 μm to 1000 μm, such as 10 μm, 50 μm, 100 μm, 1000 μm, and the like;
depositing silicon oxide or silicon nitride, or directly performing thermal oxidation to form a protective layer of silicon oxide, wherein the thickness of the protective layer may range from 10nm to 100 μm, such as 10 μm, 20 μm, 50 μm, and the like;
and thinning the adapter plate 300 to expose the bottom of the TSV hole so as to form the adapter plate 300 with the through hole 301.
The type of the interposer 300, the shape, distribution, number, and forming method of the through holes 301 are not limited herein.
As an example, the bonding method of the composite structure and the interposer 300 includes one of thermocompression bonding, surface activation bonding, anodic bonding, and gluing.
Specifically, in this embodiment, the composite structure and the interposer 300 are bonded together by gluing, but the bonding method is not limited thereto, and after the bonding process is completed, the through holes 301 are communicated with the grooves 104 to form the heat dissipation micro channels, so as to prepare and form the heat dissipation chip.
By way of example, the heat sink chip may include a liquid-cooled heat sink chip or an air-cooled heat sink chip.
Specifically, referring to fig. 9, the through hole 301 at least includes a heat dissipation medium inlet and a heat dissipation medium outlet, so as to provide a running path for the heat dissipation medium 400. The heat dissipation medium 400 may be a liquid cooling heat dissipation medium or a gas cooling heat dissipation medium, which is not limited herein.
In this embodiment, the preset distance h from the first end of the metal pillar 103 to the inverted heating point on the surface of the chip 202 may be within 20 μm, and since the heat conduction capability of the metal is several times that of silicon, silicon carbide or gallium arsenide, the heat of the heating point of the chip 202 can be quickly conducted to the first substrate 100 through the metal pillar 103, and then through the heat dissipation micro channel, the heat conducted by the metal pillar 103 can exchange heat with the heat dissipation medium in the heat dissipation micro channel, so as to dissipate the heat.
As shown in fig. 9, the present embodiment further provides a heat dissipation chip, which can be formed by the above-mentioned manufacturing process in the present embodiment, but is not limited thereto.
Specifically, the heat dissipation chip includes a first substrate 100, a second substrate 200 and an interposer 300, wherein the first substrate 100 has a metal pillar 103 and a groove 104 therein, the metal pillar 103 includes a first end and an opposite second end, and the groove 104 exposes the second end of the metal pillar 103; the second substrate 200 and the first substrate 100 are bonded to form a composite structure, the second substrate 200 includes an inverted chip 202 to be heat-dissipated, and a preset distance h is formed between the inverted chip 202 and the first end of the metal pillar 103; the adapter plate 300 is bonded with the composite structure, the adapter plate 300 is provided with a through hole 301, and the through hole 301 is communicated with the groove 104 to form a heat dissipation micro-channel.
By way of example, the predetermined distance h between the inverted chip 202 and the first end of the metal pillar 103 is 10 μm to 700 μm, such as 10 μm, 20 μm, 50 μm, 100 μm, 200 μm, 700 μm, and the like.
Specifically, in the present embodiment, the second substrate 200 bonded to the first substrate 100 may be supported by the first substrate 100 in the process of thinning the second substrate 200, so as to form the smaller preset distance h, thereby avoiding the risk of fragments, and the smaller preset distance h may further improve the heat dissipation effect of the metal pillar 103.
As an example, the chip 202 is located right above the correspondingly disposed metal pillar 103, so as to further increase the heat dissipation area of the metal pillar 103 to the chip 202, and improve the heat dissipation effect.
By way of example, the depth D of the groove 104 is 100 μm to 500 μm, such as 100 μm, 200 μm, 500 μm, and the like; the height H of the metal pillar 103 exposed by the groove 104 is 10 μm to 300 μm, such as 10 μm, 50 μm, 100 μm, 300 μm, and the like. The heat of the heat generating spot of the inverted chip 202 can be quickly conducted to the first substrate 100 through the metal pillar 103, and then the heat conducted by the metal pillar 103 can exchange heat with the heat dissipating medium in the heat dissipating micro-channel through the heat dissipating micro-channel formed by the groove 104 and the through hole 301, so as to dissipate the heat.
As an example, a passivation layer 201 is disposed between the second substrate 200 and the first substrate 100, and the passivation layer 201 includes one or a combination of a silicon oxide layer and a silicon nitride layer.
By way of example, the heat sink chip includes a liquid-cooled heat sink chip or an air-cooled heat sink chip.
Specifically, the through hole 301 at least includes a heat dissipation medium inlet and a heat dissipation medium outlet, so as to provide a running path for the heat dissipation medium 400. The heat dissipation medium 400 may be a liquid cooling heat dissipation medium or a gas cooling heat dissipation medium, which is not limited herein.
In summary, the heat dissipation chip and the manufacturing method thereof of the present invention includes a first substrate, a second substrate and an adapter plate, wherein the first substrate includes a metal pillar and a groove exposing a second end of the metal pillar, a composite structure is formed by bonding the first substrate and the second substrate, and an inverted chip to be heat-dissipated has a predetermined distance from the first end of the metal pillar, wherein a heat generating point of the chip is located at an upper portion of the chip, so that the inverted chip of the present invention can effectively shorten a distance between the first end of the metal pillar and the heat generating point at the upper portion of the chip, and the heat of the heat generating point of the chip can be rapidly transferred to the first substrate through the metal pillar due to the good heat conduction capability of the metal, and the heat transferred by the metal pillar can be well heat exchanged with a heat dissipation medium in the heat dissipation micro flow channel through the groove in the first substrate and the through hole in the adapter plate, therefore, the invention can realize good heat dissipation of the chip without forming a cavity on the front surface of the chip, can reduce the complexity of the process and can prepare the heat dissipation chip with high heat dissipation performance.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A manufacturing method of a heat dissipation chip is characterized by comprising the following steps:
providing a first substrate, and forming a metal column in the first substrate, wherein the metal column comprises a first end and an opposite second end;
providing a second base, wherein the second base comprises a substrate, a chip positioned on the substrate and an interconnection layer positioned on the surface of the chip, and bonding the first base and the second base to form a composite structure;
thinning the second base, removing the substrate, exposing the interconnection layer, inverting the chip positioned on the upper part of the second base, wherein the inverted chip has a preset distance with the first end of the metal column, and the preset distance is 10-20 microns;
patterning the first substrate to form a groove, wherein the groove exposes the second end of the metal column;
and providing an adapter plate with a through hole, bonding the composite structure and the adapter plate, and communicating the through hole with the groove to form a heat dissipation micro-channel.
2. The method for manufacturing a heat dissipating chip according to claim 1, wherein: the bonding method of the first substrate and the second substrate comprises one of hot-press bonding, surface activation bonding, anodic bonding and gluing; the bonding method of the composite structure and the adapter plate comprises one of hot-press bonding, surface activation bonding, anodic bonding and gluing.
3. The method for manufacturing a heat dissipating chip according to claim 1, wherein: and a passivation layer is arranged between the second substrate and the first substrate and comprises one or a combination of a silicon oxide layer or a silicon nitride layer.
4. The method for manufacturing a heat dissipating chip according to claim 1, wherein: the chip is positioned right above the metal column which is correspondingly arranged; the depth of the groove is 100-500 mu m; the height of the metal column exposed by the groove is 10-300 mu m.
5. The method for manufacturing a heat dissipating chip according to claim 1, wherein: the heat dissipation chip comprises a liquid cooling heat dissipation chip or an air cooling heat dissipation chip.
6. A heat dissipating chip, comprising:
the first substrate is provided with a metal column and a groove, the metal column comprises a first end and an opposite second end, and the groove exposes the second end of the metal column;
the second substrate is bonded with the first substrate to form a composite structure and comprises an inverted chip to be radiated and an interconnection layer positioned on the surface of the chip, the inverted chip and the first end of the metal column are at a preset distance of 10-20 microns;
the adapter plate is bonded with the composite structure and provided with a through hole, and the through hole is communicated with the groove to form a heat dissipation micro-channel.
7. The heat dissipating chip of claim 6, wherein: the chip is positioned right above the metal column which is correspondingly arranged; the depth of the groove is 100-500 mu m; the height of the metal column exposed by the groove is 10-300 mu m.
8. The heat dissipating chip of claim 6, wherein: and a passivation layer is arranged between the second substrate and the first substrate and comprises one or a combination of a silicon oxide layer or a silicon nitride layer.
9. The heat dissipating chip of claim 6, wherein: the heat dissipation chip comprises a liquid cooling heat dissipation chip or an air cooling heat dissipation chip.
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| CN117038629A (en) * | 2023-10-09 | 2023-11-10 | 之江实验室 | Plastic-package-free embedded system-on-a-chip structure based on glass carrier plate and preparation method |
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| JP2004022914A (en) * | 2002-06-19 | 2004-01-22 | Hitachi Ltd | Insulated circuit board, cooling structure therefor, power semiconductor device, and cooling structure therefor |
| US8502362B2 (en) * | 2011-08-16 | 2013-08-06 | Advanced Analogic Technologies, Incorporated | Semiconductor package containing silicon-on-insulator die mounted in bump-on-leadframe manner to provide low thermal resistance |
| JP5122194B2 (en) * | 2007-07-09 | 2013-01-16 | 小島プレス工業株式会社 | Cooling system |
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