CN110010600B - Interconnection structure for vertically placing radio frequency chip module and manufacturing method thereof - Google Patents
Interconnection structure for vertically placing radio frequency chip module and manufacturing method thereof Download PDFInfo
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- CN110010600B CN110010600B CN201811650208.2A CN201811650208A CN110010600B CN 110010600 B CN110010600 B CN 110010600B CN 201811650208 A CN201811650208 A CN 201811650208A CN 110010600 B CN110010600 B CN 110010600B
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- radio frequency
- chip module
- frequency chip
- carrier plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
Abstract
The invention discloses an interconnection structure for vertically placing a radio frequency chip module and a manufacturing method thereof, wherein the interconnection structure comprises a functional chip, a radio frequency chip module, a base carrier plate and a radiating carrier plate; a fixing groove for placing the side wall of the radio frequency chip module is formed in the base support plate, and the functional chip is communicated with one end, close to the upper surface of the base support plate, of the radio frequency chip module; the upper surface of the radiating support plate is provided with a groove, the size of the groove is matched with that of the radio frequency chip module, and the upper surface of the radiating support plate is fixedly connected with the lower surface of the base support plate; the invention provides an interconnection structure for vertically placing a radio frequency chip module and a manufacturing method thereof, wherein the bottom of the radio frequency chip module is provided with a heat dissipation carrier plate with a micro flow groove, and the heat dissipation carrier plate can realize the integral heat dissipation of the radio frequency chip module in the XYZ direction.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an interconnection structure for vertically placing a radio frequency chip module and a manufacturing method thereof.
Background
The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.
However, for a high-frequency micro-system, the area of the antenna array is smaller and smaller, and the distance between the antennas needs to be kept within a certain range, so that the whole module has excellent communication capability. However, for the analog device chip such as the rf chip, the area of the analog device chip cannot be reduced by a multiplying factor as that of the digital chip, so that the rf micro system with very high frequency does not have enough area to place the PA/LNA at the same time, and the increasing power also makes the traditional air cooling heat dissipation method gradually unable to meet the requirement.
Disclosure of Invention
The invention overcomes the defects of the prior art, and provides the interconnection structure for vertically placing the radio frequency chip module and the manufacturing method thereof, wherein the heat dissipation carrier plate with the micro flow grooves is arranged at the bottom of the radio frequency chip module, and the heat dissipation carrier plate can realize the integral heat dissipation of the radio frequency chip module in the XYZ direction.
The technical scheme of the invention is as follows:
an interconnection structure for vertically placing a radio frequency chip module comprises a functional chip, the radio frequency chip module, a base carrier plate and a heat dissipation carrier plate; a fixing groove for placing the side wall of the radio frequency chip module is formed in the base support plate, and the functional chip is communicated with one end, close to the upper surface of the base support plate, of the radio frequency chip module; the upper surface of the radiating support plate is provided with a groove, the size of the groove is matched with that of the radio frequency chip module, and the upper surface of the radiating support plate is fixedly connected with the lower surface of the base support plate.
Furthermore, the upper surface of the radiating carrier plate and the lower surface of the base carrier plate are welded by adopting a bonding process.
Further, the upper surface of the radiating support plate and the lower surface of the base support plate are fixed by glue.
Further, glue is filled in the gap between the radio frequency chip module and the fixing groove.
A manufacturing method of an interconnection structure for vertically placing a radio frequency chip module comprises the following specific steps:
101) a base carrier plate treatment step: fixing the temporary carrier plate on the upper surface of the base carrier plate by using a temporary bonding process; thinning the lower surface of the base support plate and manufacturing a bonding pad; manufacturing a fixing groove on the lower surface of the base support plate through photoetching and dry etching processes;
102) a fixing step: step 101), inserting a radio frequency chip module with a bonding pad on a side wall into a fixing groove on the lower surface of the base carrier plate after treatment, and filling glue into a gap between the radio frequency chip module and the fixing groove of the base carrier plate; or coating one of glue, solder or filling glue in the fixing groove, and then inserting the radio frequency chip module;
103) a heat dissipation carrier plate treatment step: manufacturing a bonding pad on the upper surface of the radiating support plate, and manufacturing a groove by an etching process, wherein the size of the groove is adapted to the size of the radio frequency chip module; the upper surface of the radiating support plate is bonded with the lower surface of the base support plate, and the exposed part of the radio frequency chip module is wrapped in the groove; the groove is internally provided with circulating liquid;
104) a forming step: removing the temporary carrier plate, cleaning the side walls of the base carrier plate and the radio frequency chip module, manufacturing an RDL and a bonding pad on the upper surface of the base carrier plate, and communicating the radio frequency chip module with the RDL; a functional chip is arranged on a bonding pad on the upper surface of the base carrier plate; and cutting to obtain the interconnection structure for vertically placing the radio frequency chip module.
Furthermore, the temporary carrier plate, the heat dissipation carrier plate and the base carrier plate are made of one of 4, 6, 8 and 12 inches, the thickness ranges from 200um to 2000um, and the materials are made of one of silicon wafers, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane.
Further, the width of the groove ranges from 1um to 5000um, and the depth ranges from 10um to 5000 um.
Furthermore, the thickness of the bonding pad is between 100nm and 1000um, and the bonding pad adopts one of copper, aluminum, nickel, silver, gold and tin; the bonding pad is one or more layers.
Further, the temperature of the bonding process is controlled between 100 and 350 degrees.
Furthermore, the thickness of the thinning is controlled to be 10um to 1000 um.
Compared with the prior art, the invention has the advantages that: according to the invention, the interconnection of the radio frequency chip and the antenna is realized by processing the base support plate, and the radio frequency chip module is vertically welded on the base support plate, so that the area in the horizontal direction is reduced; meanwhile, the bottom of the radio frequency chip module is provided with the heat dissipation support plate with the micro flow grooves, and the heat dissipation support plate can realize the integral heat dissipation of the radio frequency chip module in the XYZ direction.
Drawings
FIG. 1 is a cross-sectional view of a base carrier and a temporary carrier according to the present invention during soldering;
FIG. 2 is a cross-sectional view of the carrier plate of the thinned base of FIG. 1 according to the present invention;
fig. 3 is a cross-sectional view of a carrier plate with fixing grooves according to the present invention;
FIG. 4 is a cross-sectional view of the temporary carrier of FIG. 3 according to the present invention;
FIG. 5 is a cross-sectional view of the carrier plate of the base of FIG. 4 after thinning in accordance with the present invention;
FIG. 6 is a cross-sectional view of the RF chip module of FIG. 5 according to the present invention;
FIG. 7 is a cross-sectional view of FIG. 6 with glue fixation according to the present invention;
fig. 8 is a cross-sectional view of the heat dissipation carrier of fig. 7 according to the present invention;
FIG. 9 is a cross-sectional view of the temporary carrier of FIG. 8 with the temporary carrier removed in accordance with the present invention;
fig. 10 is a cross-sectional view of the present invention.
The labels in the figure are: the chip module comprises a temporary carrier plate 101, a base carrier plate 102, a fixing groove 103, a radio frequency chip module 104, glue 105, a heat dissipation carrier plate 106 and a functional chip 107.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.
The invention is further described with reference to the following figures and detailed description.
As shown in fig. 1 to 10, an interconnect structure for vertically placing a radio frequency chip module includes a functional chip 107, a radio frequency chip module 104, a base carrier 102, and a heat dissipation carrier 106; the base carrier 102 is provided with a fixing groove 103 for placing a sidewall of the rf chip module 104, and the functional chip 107 is connected to an end of the rf chip module 104 close to the upper surface of the base carrier 102. The upper surface of the heat-dissipating carrier 106 is provided with a groove, the size of the groove is adapted to the rf chip module 104, and the upper surface of the heat-dissipating carrier 106 is fixedly connected to the lower surface of the base carrier 102. The upper surface of the heat dissipation carrier 106 and the lower surface of the base carrier 102 are bonded by a bonding process. The upper surface of the heat dissipation carrier 106 and the lower surface of the base carrier 102 are fixed by glue 105. The gap between the rf chip module 104 and the fixing groove 103 is filled with glue 105. The radio frequency chip module is a component provided with a radio frequency chip.
A manufacturing method of an interconnection structure for vertically placing a radio frequency chip module comprises the following specific steps:
101) base carrier 102 processing step: the temporary carrier 101 is fixed to the upper surface of the base carrier 102 by a temporary bonding process. Thinning the lower surface of a base carrier plate 102, controlling the thinning thickness to be 10um to 1000um, manufacturing a bonding pad, wherein the thickness range of the bonding pad is 1nm to 100um, the structure of the bonding pad can be one layer or multiple layers, and the material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like; when the bonding pad has a multi-layer structure, the material of each layer is generally the same. The lower surface of the base carrier plate 102 is manufactured into the fixing groove 103 through photoetching and dry etching processes, the width range of the fixing groove 103 is 1um to 1000um, and the depth is 10um to 1000 um.
Or before the bonding process, firstly, a fixing groove 103 is formed on the upper surface of the base carrier plate 102 through photoetching and dry etching processes, wherein the width range of the fixing groove 103 is 1um to 1000um, and the depth is 10um to 1000 um; then, the temporary carrier 101 is fixed on the base carrier 102 by a temporary bonding process, and the base carrier 102 is thinned to expose the fixing slots 103.
102) A fixing step: inserting a radio frequency chip module 104 with a bonding pad on a sidewall into the fixing groove 103 on the lower surface of the base carrier plate 102 after the processing in the step 101), and filling glue 105 in a gap between the radio frequency chip module 104 and the fixing groove 103 of the base carrier plate 102. Or coating glue 105, solder or filling glue in the fixing groove 103, and then inserting the radio frequency chip module 104 to fix the vertical radio frequency chip.
103) A heat dissipation carrier plate 106 treatment step: the upper surface of the heat dissipation carrier 106 is made into a pad, the thickness of which ranges from 1nm to 100um, and the pad can be one layer or multiple layers, and the material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel, etc. When the bonding pad has a multi-layer structure, the same material is generally used for each layer. The grooves are formed by an etching process, and the size of the grooves is adapted to the radio frequency chip module 104. The upper surface of the heat dissipation carrier 106 is bonded to the lower surface of the base carrier 102, and the exposed portion of the rf chip module 104 is wrapped in the recess. The groove is internally provided with circulating liquid to achieve the purpose of radiating the radio frequency chip module 104. Wherein, recess width range is in 1um to 5000um, and the degree of depth is in 10um to 5000 um.
Or it may be replaced by another way, that is, it is not necessary to make pads on the surface of the base carrier 102 and the heat dissipation carrier 106, but only by using glue 105 as a medium at the interface between the two, so as to achieve the purpose of bonding the two.
104) A forming step: removing the temporary carrier 101, cleaning the sidewalls of the base carrier 102 and the rf chip module 104, and forming an RDL and a pad on the upper surface of the base carrier 102 to connect the rf chip module 104 and the RDL. A functional chip 107 is disposed on the pad on the upper surface of the base carrier 102. And cutting to obtain an interconnection structure for vertically placing the radio frequency chip module 104.
The heat dissipation carrier plate 106, the base carrier plate 102, and the temporary carrier plate 101 are made of one of 4, 6, 8, and 12 inch wafers, have a thickness ranging from 200um to 2000um, are generally made of silicon wafers, or made of other materials, including inorganic materials such as glass, quartz, silicon carbide, and alumina, or organic materials such as epoxy resin and polyurethane, and have a main function of providing a supporting function.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (6)
1. A method for manufacturing an interconnection structure for vertically placing a radio frequency chip module is characterized by comprising a functional chip, a radio frequency chip module, a base carrier plate and a radiating carrier plate; a fixing groove for placing the side wall of the radio frequency chip module is formed in the base support plate, and the functional chip is communicated with one end, close to the upper surface of the base support plate, of the radio frequency chip module; the upper surface of the radiating support plate is provided with a groove, the size of the groove is matched with that of the radio frequency chip module, and the upper surface of the radiating support plate is fixedly connected with the lower surface of the base support plate; the upper surface of the radiating support plate and the lower surface of the base support plate are welded by adopting a bonding process; the upper surface of the radiating support plate and the lower surface of the base support plate are fixed by glue; glue is filled in the gap between the radio frequency chip module and the fixing groove; the specific treatment comprises the following steps:
101) a base carrier plate treatment step: fixing the temporary carrier plate on the upper surface of the base carrier plate by using a temporary bonding process; thinning the lower surface of the base support plate and manufacturing a bonding pad; manufacturing a fixing groove on the lower surface of the base support plate through photoetching and dry etching processes;
102) a fixing step: step 101), inserting a radio frequency chip module with a bonding pad on a side wall into a fixing groove on the lower surface of the base carrier plate after treatment, and filling glue into a gap between the radio frequency chip module and the fixing groove of the base carrier plate; or coating one of glue, solder or filling glue in the fixing groove, and then inserting the radio frequency chip module;
103) a heat dissipation carrier plate treatment step: manufacturing a bonding pad on the upper surface of the radiating support plate, and manufacturing a groove by an etching process, wherein the size of the groove is adapted to the size of the radio frequency chip module; the upper surface of the radiating support plate is bonded with the lower surface of the base support plate, and the exposed part of the radio frequency chip module is wrapped in the groove; the groove is internally provided with circulating liquid;
104) a forming step: removing the temporary carrier plate, cleaning the side walls of the base carrier plate and the radio frequency chip module, manufacturing an RDL and a bonding pad on the upper surface of the base carrier plate, and communicating the radio frequency chip module with the RDL; a functional chip is arranged on a bonding pad on the upper surface of the base carrier plate; and cutting to obtain the interconnection structure for vertically placing the radio frequency chip module.
2. The method for manufacturing an interconnection structure for vertically placing a radio frequency chip module according to claim 1, wherein the method comprises the following steps: the temporary carrier plate, the heat dissipation carrier plate and the base carrier plate are made of one of 4, 6, 8 and 12 inches, the thickness range is 200um to 2000um, and the material is one of silicon wafers, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane.
3. The method for manufacturing an interconnection structure for vertically placing a radio frequency chip module according to claim 1, wherein the method comprises the following steps: the width of the groove ranges from 1um to 5000um, and the depth ranges from 10um to 5000 um.
4. The method for manufacturing an interconnection structure for vertically placing a radio frequency chip module according to claim 1, wherein the method comprises the following steps: the thickness of the bonding pad is between 100nm and 1000um, and the bonding pad adopts one of copper, aluminum, nickel, silver, gold and tin; the bonding pad is one or more layers.
5. The method for manufacturing an interconnection structure for vertically placing a radio frequency chip module according to claim 1, wherein the method comprises the following steps: the temperature of the bonding process is controlled between 100 and 350 degrees.
6. The method for manufacturing an interconnection structure for vertically placing a radio frequency chip module according to claim 1, wherein the method comprises the following steps: the thickness of the thinning is controlled between 10um and 1000 um.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811650208.2A CN110010600B (en) | 2018-12-31 | 2018-12-31 | Interconnection structure for vertically placing radio frequency chip module and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811650208.2A CN110010600B (en) | 2018-12-31 | 2018-12-31 | Interconnection structure for vertically placing radio frequency chip module and manufacturing method thereof |
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| CN110010600A CN110010600A (en) | 2019-07-12 |
| CN110010600B true CN110010600B (en) | 2020-12-29 |
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| CN116759388B (en) * | 2023-08-18 | 2023-10-27 | 合肥阿基米德电子科技有限公司 | Welding-free module packaging structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195156A (en) * | 1986-02-21 | 1987-08-27 | Fuji Electric Co Ltd | Mounting of semiconductor chip |
| KR100253390B1 (en) * | 1997-12-26 | 2000-04-15 | 김영환 | Lamination type semiconductor package and method of fabricating thereof |
| US6198164B1 (en) * | 1998-05-09 | 2001-03-06 | Hyundai Electronics Industries Co., Ltd. | Ultra high density integrated circuit semiconductor package and method for fabricating the same |
| JP2001352002A (en) * | 2000-06-08 | 2001-12-21 | Denso Corp | Semiconductor package |
| KR20030057191A (en) * | 2001-12-28 | 2003-07-04 | 동부전자 주식회사 | Semiconductor package |
| TW200952251A (en) * | 2008-02-20 | 2009-12-16 | Ibm | Radio frequency (RF) integrated circuit (IC) packages with integrated aperture-coupled patch antenna(s) |
| CN207353212U (en) * | 2017-07-11 | 2018-05-11 | 苏州通博半导体科技有限公司 | A kind of magazine for chi frame discharging |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100586698B1 (en) * | 2003-12-23 | 2006-06-08 | 삼성전자주식회사 | Semiconductor Module having semiconductor chip package which is vertically mounted on module board |
-
2018
- 2018-12-31 CN CN201811650208.2A patent/CN110010600B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195156A (en) * | 1986-02-21 | 1987-08-27 | Fuji Electric Co Ltd | Mounting of semiconductor chip |
| KR100253390B1 (en) * | 1997-12-26 | 2000-04-15 | 김영환 | Lamination type semiconductor package and method of fabricating thereof |
| US6198164B1 (en) * | 1998-05-09 | 2001-03-06 | Hyundai Electronics Industries Co., Ltd. | Ultra high density integrated circuit semiconductor package and method for fabricating the same |
| JP2001352002A (en) * | 2000-06-08 | 2001-12-21 | Denso Corp | Semiconductor package |
| KR20030057191A (en) * | 2001-12-28 | 2003-07-04 | 동부전자 주식회사 | Semiconductor package |
| TW200952251A (en) * | 2008-02-20 | 2009-12-16 | Ibm | Radio frequency (RF) integrated circuit (IC) packages with integrated aperture-coupled patch antenna(s) |
| CN207353212U (en) * | 2017-07-11 | 2018-05-11 | 苏州通博半导体科技有限公司 | A kind of magazine for chi frame discharging |
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| CN110010600A (en) | 2019-07-12 |
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Inventor after: Zhang Bing Inventor after: Zhang Xun Inventor after: Song Qihe Inventor before: Feng Guangjian Inventor before: Wang Zhiyu Inventor before: Zhang Bing Inventor before: Zhou Qi Inventor before: Zhang Xun Inventor before: Yu Faxin |
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Address after: Room 502, building 5, No. 3, Xiyuan 3rd road, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province Applicant after: Zhejiang Zhenlei Technology Co., Ltd Address before: 6 / F, building 5, No. 3, Xiyuan 3rd road, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province Applicant before: HANGZHOU ZHENLEI MICROWAVE TECHNOLOGY Co.,Ltd. |
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