CN112203398A - Liquid cooling heat dissipation process for PCB - Google Patents
Liquid cooling heat dissipation process for PCB Download PDFInfo
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- CN112203398A CN112203398A CN202011058249.XA CN202011058249A CN112203398A CN 112203398 A CN112203398 A CN 112203398A CN 202011058249 A CN202011058249 A CN 202011058249A CN 112203398 A CN112203398 A CN 112203398A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a liquid cooling heat dissipation process of a PCB, which comprises the following steps: (a) welding the metal cap and the metal structure to form a micro-channel structure; (b) providing a substrate, manufacturing a TSV, an RDL and a bonding pad on the back surface of the substrate, thinning the surface of the substrate to expose the TSV, and polishing to expose metal; (c) opening a cavity on the surface of the substrate, embedding the chip, manufacturing an RDL (radio frequency identification) and a bonding pad on the surface of the chip, etching a groove on the substrate on the back of the chip to expose the back of the chip, and obtaining an adapter plate; (d) and manufacturing a first solder ball on a pad on the back of the substrate, welding a micro-channel structure on the PCB, and attaching the adapter plate on the PCB to obtain a final structure. According to the liquid-cooling heat dissipation process of the PCB, the micro channel capable of achieving the grounding function is arranged and welded at the bottom of the chip, so that the micro channel can achieve the heat dissipation function of the chip and can achieve the grounding function of the chip through the conductive function of the micro channel.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a liquid cooling heat dissipation process for a PCB.
Background
The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.
However, for a high-frequency micro-system, the area of the antenna array is smaller and smaller, and the distance between the antennas is kept in a certain specific range, so that the whole module has excellent communication capability; however, for an analog device chip such as a radio frequency chip, the area of the analog device chip cannot be reduced by the same magnification as that of a digital chip, so that a radio frequency micro system with a very high frequency will not have enough area to simultaneously place the PA/LNA, and the PA/LNA needs to be stacked or vertically placed.
In the heat dissipation structure, a more advanced liquid cooling or phase change refrigeration process is adopted, generally, a metal processing mode is used as a base of the radio frequency module, a micro-flow channel is arranged in the base, and the module is fixed on the metal base by adopting a welding process to complete the placement of a chip; however, for a micro flow channel made of a semiconductor material and used for a chip stacking process, the combination of a liquid micro flow channel interconnection interface cannot be realized in a metal welding mode, and only a reflow soldering or surface mounting mode is used, so that the traditional micro flow channel working environment with only plane welding interconnection cannot be effectively met.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a liquid-cooling heat dissipation process for a PCB, which can realize the heat dissipation function of a chip and also realize the grounding function of the chip through the conductive function of a micro channel. The technical scheme adopted by the invention is as follows:
a liquid cooling heat dissipation process for a PCB comprises the following steps:
(a) providing a metal cap, etching a plurality of liquid inlet holes on the surface of the metal cap, manufacturing passivation layers on the surface of the metal cap and the inner wall of the liquid inlet holes, and corroding the outer edge of the metal cap; providing a metal structure with a groove on the surface, depositing a passivation layer in the groove, and welding a metal cap and the metal structure with the groove to form a micro-channel structure;
(b) providing a substrate, manufacturing a TSV, an RDL and a bonding pad on the back surface of the substrate, temporarily bonding the back surface of the substrate, thinning the surface of the substrate to expose the TSV, covering a passivation layer, and polishing to expose metal;
(c) opening a cavity on the surface of the substrate, embedding the chip into the cavity, filling a gap between the chip and the cavity, then manufacturing an RDL (remote description language) and a bonding pad on the surface of the chip, removing the temporary bonding on the back of the substrate, performing temporary bonding on the surface of the substrate, etching a groove on the substrate on the back of the chip to expose the back of the chip, and obtaining an adapter plate;
(d) the first solder balls are manufactured on the bonding pads on the two sides of the back of the substrate, the PCB is provided, the liquid inlet is formed in the PCB, the micro-channel structure is welded on the PCB, the adapter plate is attached to the PCB, the micro-channel structure and the back of the chip are interconnected, the first solder balls and the PCB are interconnected, and meanwhile the liquid inlet hole of the micro-channel structure and the liquid inlet on the PCB are interconnected to obtain the final structure.
Preferably, the PCB board liquid cooling heat dissipation process, wherein the step (b) specifically comprises:
(b1) manufacturing TSV holes in the back of the substrate through photoetching and etching processes, depositing an insulating layer on the back of the substrate, manufacturing at least one seed layer above the insulating layer, and electroplating copper to enable the TSV to be filled with copper metal to form TSV conductive columns;
(b2) removing the copper on the back of the substrate to ensure that only copper filling is left on the back of the substrate;
(b3) manufacturing an RDL and a bonding pad on the back of the substrate;
(b4) and temporarily bonding the back surface of the substrate, supporting and thinning the surface of the substrate by using a slide glass, exposing the TSV on the surface of the substrate, covering the surface of the TSV with a passivation layer, and polishing to expose the TSV conductive column.
Preferably, the liquid cooling heat dissipation process for the PCB board is adopted, wherein the thinning thickness of the substrate surface in the step (b) is 100 nm-700 um; the height of the cavity in the step (c) is 100 um-600 um.
Preferably, in the liquid cooling heat dissipation process for the PCB board, the diameter of the TSV hole in the step (b1) is 1um to 1000um, and the depth is 10um to 1000 um; the insulating layer is silicon oxide or silicon nitride, and the thickness of the insulating layer ranges from 0.01 um to 100 um; the thickness of the seed layer is 0.001-100 um, and the seed layer is made of one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
A liquid cooling heat dissipation process for a PCB comprises the following steps:
(a) providing a metal cap, etching a plurality of liquid inlet holes on the surface of the metal cap, manufacturing passivation layers on the surface of the metal cap and the inner wall of the liquid inlet holes, and corroding the outer edge of the metal cap; providing a metal structure with a groove on the surface, depositing a passivation layer in the groove, and welding a metal cap and the metal structure with the groove to form a micro-channel structure;
(b) providing a substrate, manufacturing a TSV and a bonding pad on the surface of the substrate, forming a cavity on the surface of the substrate, embedding a chip into the cavity, filling a gap between the chip and the cavity, manufacturing an RDL on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back of the substrate to expose the TSV and the back of the chip, depositing a passivation layer on the back of the substrate, polishing to expose metal on the back of the TSV, and manufacturing the RDL and the bonding pad on the back of the chip;
(c) the first solder balls are manufactured on the bonding pads on the two sides of the back of the substrate, the PCB is provided, the liquid inlet is formed in the PCB, the micro-channel structure is welded on the PCB, the adapter plate is attached to the PCB, the micro-channel structure and the back of the chip are interconnected, the first solder balls and the PCB are interconnected, and meanwhile the liquid inlet hole of the micro-channel structure and the liquid inlet on the PCB are interconnected to obtain the final structure.
Preferably, the PCB board liquid cooling heat dissipation process, wherein the step (b) specifically comprises:
(b1) manufacturing TSV holes in the surface of the substrate, depositing an insulating layer on the surface of the substrate, manufacturing a seed layer above the insulating layer, and electroplating copper to enable the TSV conductive columns to be formed by filling copper metal with the TSV;
(b2) removing copper on the surface of the substrate to ensure that only copper filled on the surface of the substrate is left;
(b3) etching a cavity on the surface of the substrate, embedding a chip, filling a gap between the chip and the cavity, and finally manufacturing an RDL and a bonding pad on the surface of the chip;
(b4) and performing temporary bonding on the front surface of the substrate, using a carrier as a support to thin the back surface of the substrate, exposing the back surface of the TSV, exposing the back surface of the chip, covering the back surface of the substrate with a passivation layer, polishing to expose the TSV conductive column, and manufacturing the RDL and the bonding pad on the back surface of the substrate.
Preferably, the liquid cooling heat dissipation process for the PCB board is adopted, wherein the thickness of the back surface of the substrate in the step (b) is reduced to 100 nm-700 um; the height of the cavity in the step (b) is 100 um-600 um.
Preferably, the liquid cooling heat dissipation process for the PCB further comprises the step (c) of fabricating a second solder ball on a pad on the back of the chip and interconnecting the micro channel structure and the second solder ball on the back of the chip.
Preferably, in the liquid cooling heat dissipation process for the PCB board, the diameter of the TSV hole in the step (b1) is 1um to 1000um, and the depth is 10um to 1000 um; the insulating layer is silicon oxide or silicon nitride, and the thickness of the insulating layer ranges from 0.01 um to 100 um; the thickness of the seed layer is 0.001-100 um, and the seed layer is made of one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
The invention has the advantages that: according to the liquid-cooling heat dissipation process of the PCB, the micro channel capable of achieving the grounding function is arranged and welded at the bottom of the chip, so that the micro channel can achieve the heat dissipation function of the chip and can achieve the grounding function of the chip through the conductive function of the micro channel.
Drawings
FIG. 1 is a schematic view of a plurality of liquid inlet holes etched on the surface of a metal cap according to the present invention.
Fig. 2 is a schematic view of a grooved-surface metal structure of the present invention.
FIG. 3 is a schematic view showing the structure of a micro flow channel.
Fig. 4 is a schematic diagram of TSV, RDL and bonding pad fabrication on the back side of the substrate in embodiment 1 of the invention.
FIG. 5 is a schematic view of the cavity opened on the surface of the substrate in example 1 of the present invention.
Fig. 6 is a schematic diagram of embedding a chip in a cavity according to embodiment 1 of the present invention.
Fig. 7 is a schematic view of an interposer according to embodiment 1 of the present invention.
Fig. 8 is a schematic view of the final structure of embodiment 1 of the present invention.
Fig. 9 is a schematic diagram of TSV holes formed on the substrate surfaces of example 2 and example 3 of the present invention.
Fig. 10 is a schematic diagram of a cavity etched on the surface of the substrate in the embodiment 2 and the embodiment 3 of the present invention.
Fig. 11 is a schematic diagram of embedding a chip into a cavity, and manufacturing an RDL and a bonding pad on the surface of the chip according to embodiments 2 and 3 of the present invention.
Fig. 12 is a schematic view of manufacturing a first solder ball on the pads on both sides of the back of the chip in embodiment 2 of the invention.
Fig. 13 is a schematic diagram of the final structure of embodiment 2 of the present invention.
FIG. 14 is a diagram illustrating the formation of second solder balls on the pads on the back side of the chip and the formation of first solder balls on the pads on both sides of the back side of the substrate in accordance with embodiment 3 of the present invention.
Fig. 15 is a schematic diagram of the final structure of embodiment 3 of the present invention.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
The first embodiment;
the liquid cooling heat dissipation process for the PCB provided by the embodiment comprises the following steps of:
as shown in figure 1 of the drawings, in which,
(a) providing a metal cap, etching a plurality of liquid inlet holes on the surface of the metal cap, manufacturing passivation layers on the surface of the metal cap and the inner wall of the liquid inlet holes, and corroding the outer edge of the metal cap; providing a metal structure with a groove on the surface, depositing a passivation layer in the groove, and welding a metal cap and the metal structure with the groove to form a micro-channel structure;
as shown in fig. 1, a liquid inlet hole is formed in the surface 103 of the metal cap through a wet etching process, then a passivation layer is formed on the whole cap and the inner wall of the liquid inlet hole, and then a partial area of the passivation layer is removed through a dry etching process;
as shown in fig. 2, a metal structure 104 with a groove 105 on the surface is manufactured, and a passivation layer is deposited in the groove;
as shown in fig. 3, the metal cap and the metal with the groove are welded into a structure with a micro flow channel;
(b) providing a substrate, manufacturing a TSV, an RDL and a bonding pad on the back surface of the substrate, temporarily bonding the back surface of the substrate, thinning the surface of the substrate to expose the TSV, covering a passivation layer, and polishing to expose metal, wherein the thickness of the thinned substrate is 100 nm-700 mu m;
wherein the step (b) is specifically as follows:
(b1) as shown in fig. 4, a TSV hole is formed in the back of a substrate through photoetching and etching processes, the diameter of the TSV hole is 1-1000 um, the depth of the TSV hole is 10-1000 um, an insulating layer is deposited on the back of the substrate, the insulating layer is silicon oxide or silicon nitride, the thickness of the insulating layer is 0.01-100 um, at least one seed layer is formed above the insulating layer, the thickness of the seed layer is 0.001-100 um, the seed layer is made of one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, copper is electroplated, the TSV conductive column is formed by filling copper metal into the TSV, and the copper is densified at 200-500 ℃ to make the copper more dense;
(b2) removing the copper on the back of the substrate to ensure that only copper filling is left on the back of the substrate; the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the silicon chip can also be reserved;
(b3) manufacturing an RDL and a bonding pad on the back of the substrate by photoetching and electroplating processes, wherein the thickness range is 1nm to 100um, the RDL and the bonding pad can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like;
(b4) and the back of the substrate is temporarily bonded, the slide glass is used for supporting and thinning the surface of the substrate, the thinning thickness is 100nm to 700um, the TSV is exposed out of the surface of the substrate, the surface of the TSV is covered by a passivation layer, and then the TSV conductive column is exposed by polishing.
(c) Opening a cavity on the surface of a substrate, embedding a chip into the cavity, wherein the height of the cavity is 100-600 um, filling a gap between the chip and the cavity, then manufacturing an RDL (remote data link) and a bonding pad on the surface of the chip, removing temporary bonding on the back of the substrate, performing temporary bonding on the surface of the substrate, etching a groove on the substrate on the back of the chip, and exposing the back of the chip to obtain an adapter plate;
as shown in fig. 5, a cavity 108 is formed on the surface of the substrate by a dry etching process, and the height of the cavity is 100-600 um;
as shown in fig. 6, the cavity is filled with glue, the chip 109 is embedded, and the gap between the chip and the deep cavity is filled with other glue;
then manufacturing an RDL and a bonding pad on the surface of the chip, and bonding;
as shown in fig. 7, performing temporary bonding on the surface of the substrate, etching a groove 110 on the substrate on the back of the chip to expose the back of the chip, thereby obtaining an interposer;
(d) the first solder balls are manufactured on the bonding pads on the two sides of the back of the substrate, the PCB is provided, the liquid inlet is formed in the PCB, the micro-channel structure is welded on the PCB, the adapter plate is attached to the PCB, the micro-channel structure and the back of the chip are interconnected, the first solder balls and the PCB are interconnected, and meanwhile the liquid inlet hole of the micro-channel structure and the liquid inlet on the PCB are interconnected to obtain the final structure.
As shown in fig. 7, a first solder ball 111 is formed on a pad on the back side of the chip;
as shown in fig. 8, the micro-channel structure is welded on the PCB, and then the adapter plate module is attached to the PCB, so that the micro-channel module is interconnected with the back of the chip, the first solder ball is interconnected with the PCB, and meanwhile, the liquid inlet of the micro-channel structure is interconnected with the liquid inlet of the PCB, thereby obtaining the final structure.
Example 2:
the liquid cooling heat dissipation process for the PCB provided by the embodiment comprises the following steps of:
(a) providing a metal cap, etching a plurality of liquid inlet holes on the surface of the metal cap, manufacturing passivation layers on the surface of the metal cap and the inner wall of the liquid inlet holes, and corroding the outer edge of the metal cap; providing a metal structure with a groove on the surface, depositing a passivation layer in the groove, and welding a metal cap and the metal structure with the groove to form a micro-channel structure;
as shown in fig. 1, a liquid inlet hole is formed in the surface 103 of the metal cap through a wet etching process, then a passivation layer is formed on the whole cap and the inner wall of the liquid inlet hole, and then a partial area of the passivation layer is removed through a dry etching process;
as shown in fig. 2, a passivation layer is deposited in a groove, in which a metal 104 with a groove 105 on the surface is fabricated;
as shown in fig. 3, the metal cap and the metal with the groove are welded into a structure with a micro flow channel;
(b) providing a substrate, manufacturing TSV and a bonding pad on the surface of the substrate, forming a cavity on the surface of the substrate, wherein the height of the cavity is 100-600 um, embedding a chip into the cavity, filling a gap between the chip and the cavity, manufacturing RDL on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back of the substrate to expose the TSV and the back of the chip, wherein the thinning thickness of the back of the substrate is 100-700 nm, depositing a passivation layer on the back of the substrate, polishing to expose metal on the back of the TSV, and manufacturing the RDL and the bonding pad on the back of the chip;
the step (b) is specifically as follows:
(b1) as shown in fig. 9, a TSV hole is formed in the surface of a substrate through photolithography and etching processes, the diameter of the TSV hole is 1-1000 um, the depth of the TSV hole is 10-1000 um, an insulating layer is deposited on the surface of the substrate, the insulating layer is silicon oxide or silicon nitride, the thickness of the insulating layer is 0.01-100 um, a seed layer is formed above the insulating layer, the thickness of the seed layer is 0.001-100 um, the seed layer is made of one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, copper is electroplated, the TSV conductive column is formed by filling copper metal in the TSV conductive column, and the copper is densified at a temperature of 200-500 ℃;
(b2) removing copper on the surface of the substrate to ensure that only copper is left on the surface of the substrate, wherein the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the substrate can also be reserved;
(b3) etching a cavity on the surface of the substrate as shown in FIG. 10, wherein the height of the cavity is 100-600 um, filling colloid in the cavity as shown in FIG. 11, embedding a chip, filling a gap between the chip and the cavity, and finally manufacturing an RDL and a bonding pad on the surface of the chip;
(b4) as shown in fig. 12, a temporary bonding is performed on the front surface of the substrate, a carrier is used as a support to thin the back surface of the substrate, so that the TSV back surface is exposed, the back surface of the chip is exposed, then a passivation layer is covered on the back surface of the substrate, the TSV conductive column is exposed by polishing, and RDL and a bonding pad are manufactured on the back surface of the substrate through a photoetching and electroplating process, wherein the thickness ranges from 1nm to 100um, the layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel, etc.;
(c) the first solder balls are manufactured on the bonding pads on the two sides of the back of the substrate, the PCB is provided, the liquid inlet is formed in the PCB, the micro-channel structure is welded on the PCB, the adapter plate is attached to the PCB, the micro-channel structure and the back of the chip are interconnected, the first solder balls and the PCB are interconnected, and meanwhile the liquid inlet hole of the micro-channel structure and the liquid inlet on the PCB are interconnected to obtain the final structure.
As shown in fig. 12, a first solder ball is formed on the pads on both sides of the back of the chip;
as shown in fig. 13, weld the microchannel structure on the PCB board, then paste the keysets module on the PCB board, make the microchannel module with chip back interconnection, the solder ball is with PCB interconnection, the inlet of microchannel structure is interconnected with the inlet on the PCB board simultaneously, obtains final structure.
Example 3:
the liquid cooling heat dissipation process for the PCB provided by the embodiment comprises the following steps of:
(a) providing a metal cap, etching a plurality of liquid inlet holes on the surface of the metal cap, manufacturing passivation layers on the surface of the metal cap and the inner wall of the liquid inlet holes, and corroding the outer edge of the metal cap; providing a metal structure with a groove on the surface, depositing a passivation layer in the groove, and welding a metal cap and the metal structure with the groove to form a micro-channel structure;
as shown in fig. 1, a liquid inlet hole is formed in the surface 103 of the metal cap through a wet etching process, then a passivation layer is formed on the whole cap and the inner wall of the liquid inlet hole, and then a partial area of the passivation layer is removed through a dry etching process;
as shown in fig. 2, a passivation layer is deposited in a groove, in which a metal 104 with a groove 105 on the surface is fabricated;
as shown in fig. 3, the metal cap and the metal with the groove are welded into a structure with a micro flow channel;
(b) providing a substrate, manufacturing TSV and a bonding pad on the surface of the substrate, forming a cavity on the surface of the substrate, wherein the height of the cavity is 100-600 um, embedding a chip into the cavity, filling a gap between the chip and the cavity, manufacturing RDL on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back of the substrate to expose the TSV and the back of the chip, wherein the thinning thickness of the back of the substrate is 100-700 nm, depositing a passivation layer on the back of the substrate, polishing to expose metal on the back of the TSV, and manufacturing the RDL and the bonding pad on the back of the chip;
the step (b) is specifically as follows:
(b1) as shown in fig. 9, a TSV hole is formed in the surface of a substrate through photolithography and etching processes, the diameter of the TSV hole is 1-1000 um, the depth of the TSV hole is 10-1000 um, an insulating layer is deposited on the surface of the substrate, the insulating layer is silicon oxide or silicon nitride, the thickness of the insulating layer is 0.01-100 um, a seed layer is formed above the insulating layer, the thickness of the seed layer is 0.001-100 um, the seed layer is made of one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, copper is electroplated, the TSV conductive column is formed by filling copper metal in the TSV conductive column, and the copper is densified at a temperature of 200-500 ℃;
(b2) removing copper on the surface of the substrate to ensure that only copper is left on the surface of the substrate, wherein the insulating layer on the surface of the substrate can be removed by a dry etching or wet etching process; the insulating layer on the surface of the substrate can also be reserved;
(b3) etching a cavity on the surface of the substrate as shown in FIG. 10, wherein the height of the cavity is 100-600 um, filling colloid in the cavity as shown in FIG. 11, embedding a chip, filling a gap between the chip and the cavity, and finally manufacturing an RDL and a bonding pad on the surface of the chip;
(b4) as shown in fig. 12, a temporary bonding is performed on the front surface of the substrate, a carrier is used as a support to thin the back surface of the substrate, so that the TSV back surface is exposed, the back surface of the chip is exposed, then a passivation layer is covered on the back surface of the substrate, the TSV conductive column is exposed by polishing, and RDL and a bonding pad are manufactured on the back surface of the substrate through a photoetching and electroplating process, wherein the thickness ranges from 1nm to 100um, the layer can be one layer or multiple layers, and the metal material can be titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel, etc.;
(c) the utility model discloses a chip back's pad, first soldering ball of preparation on the pad of substrate back both sides, make second soldering ball on the pad of chip back, provide the PCB board, set up the inlet on the PCB board, weld the miniflow channel structure on the PCB board, and paste the keysets on the PCB board, make the second soldering ball interconnection at miniflow channel structure and chip back, first soldering ball and PCB interconnection, simultaneously the inlet interconnection on the feed liquor hole of miniflow channel structure and the PCB board, obtain final structure.
As shown in fig. 14, a second solder ball is formed on the pad on the back side of the chip, a first solder ball is formed on the pads on both sides of the back side of the substrate, and reflow is performed;
as shown in fig. 15, the micro-channel structure is welded on the PCB, and then the adapter plate is attached to the PCB, so that the micro-channel structure is interconnected with the second solder ball on the back of the chip, the first solder ball is interconnected with the PCB, and meanwhile, the liquid inlet of the micro-channel structure is interconnected with the liquid inlet on the PCB, thereby obtaining the final structure.
According to the liquid-cooling heat dissipation process of the PCB, the micro channel capable of achieving the grounding function is arranged and welded at the bottom of the chip, so that the micro channel can achieve the heat dissipation function of the chip and can achieve the grounding function of the chip through the conductive function of the micro channel.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (9)
1. A liquid cooling heat dissipation process for a PCB is characterized by comprising the following steps:
(a) providing a metal cap, etching a plurality of liquid inlet holes on the surface of the metal cap, manufacturing passivation layers on the surface of the metal cap and the inner wall of the liquid inlet holes, and corroding the outer edge of the metal cap; providing a metal structure with a groove on the surface, depositing a passivation layer in the groove, and welding a metal cap and the metal structure with the groove to form a micro-channel structure;
(b) providing a substrate, manufacturing a TSV, an RDL and a bonding pad on the back surface of the substrate, temporarily bonding the back surface of the substrate, thinning the surface of the substrate to expose the TSV, covering a passivation layer, and polishing to expose metal;
(c) opening a cavity on the surface of the substrate, embedding the chip into the cavity, filling a gap between the chip and the cavity, then manufacturing an RDL (remote description language) and a bonding pad on the surface of the chip, removing the temporary bonding on the back of the substrate, performing temporary bonding on the surface of the substrate, etching a groove on the substrate on the back of the chip to expose the back of the chip, and obtaining an adapter plate;
(d) the first solder balls are manufactured on the bonding pads on the two sides of the back of the substrate, the PCB is provided, the liquid inlet is formed in the PCB, the micro-channel structure is welded on the PCB, the adapter plate is attached to the PCB, the micro-channel structure and the back of the chip are interconnected, the first solder balls and the PCB are interconnected, and meanwhile the liquid inlet hole of the micro-channel structure and the liquid inlet on the PCB are interconnected to obtain the final structure.
2. The liquid cooling heat dissipation process for PCB of claim 1, wherein the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the back of the substrate through photoetching and etching processes, depositing an insulating layer on the back of the substrate, manufacturing at least one seed layer above the insulating layer, and electroplating copper to enable the TSV to be filled with copper metal to form TSV conductive columns;
(b2) removing the copper on the back of the substrate to ensure that only copper filling is left on the back of the substrate;
(b3) manufacturing an RDL and a bonding pad on the back of the substrate;
(b4) and temporarily bonding the back surface of the substrate, supporting and thinning the surface of the substrate by using a slide glass, exposing the TSV on the surface of the substrate, covering the surface of the TSV with a passivation layer, and polishing to expose the TSV conductive column.
3. The liquid cooling heat dissipation process of PCB board of claim 1, wherein the thickness reduction of the substrate surface in step (b) is 100 nm-700 um; the height of the cavity in the step (c) is 100 um-600 um.
4. The liquid-cooled heat dissipation process for PCB of claim 2, wherein the diameter of the TSV hole of step (b1) is 1um to 1000um, and the depth is 10um to 1000 um; the insulating layer is silicon oxide or silicon nitride, and the thickness of the insulating layer ranges from 0.01 um to 100 um; the thickness of the seed layer is 0.001-100 um, and the seed layer is made of one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
5. A liquid cooling heat dissipation process for a PCB is characterized by comprising the following steps:
(a) providing a metal cap, etching a plurality of liquid inlet holes on the surface of the metal cap, manufacturing passivation layers on the surface of the metal cap and the inner wall of the liquid inlet holes, and corroding the outer edge of the metal cap; providing a metal structure with a groove on the surface, depositing a passivation layer in the groove, and welding a metal cap and the metal structure with the groove to form a micro-channel structure;
(b) providing a substrate, manufacturing a TSV and a bonding pad on the surface of the substrate, forming a cavity on the surface of the substrate, embedding a chip into the cavity, filling a gap between the chip and the cavity, manufacturing an RDL on the surface of the substrate, performing temporary bonding on the surface of the substrate, thinning the back of the substrate to expose the TSV and the back of the chip, depositing a passivation layer on the back of the substrate, polishing to expose metal on the back of the TSV, and manufacturing the RDL and the bonding pad on the back of the chip;
(c) the first solder balls are manufactured on the bonding pads on the two sides of the back of the substrate, the PCB is provided, the liquid inlet is formed in the PCB, the micro-channel structure is welded on the PCB, the adapter plate is attached to the PCB, the micro-channel structure and the back of the chip are interconnected, the first solder balls and the PCB are interconnected, and meanwhile the liquid inlet hole of the micro-channel structure and the liquid inlet on the PCB are interconnected to obtain the final structure.
6. The liquid cooling heat dissipation process for PCB of claim 5, wherein the step (b) is specifically as follows:
(b1) manufacturing TSV holes in the surface of the substrate, depositing an insulating layer on the surface of the substrate, manufacturing a seed layer above the insulating layer, and electroplating copper to enable the TSV conductive columns to be formed by filling copper metal with the TSV;
(b2) removing copper on the surface of the substrate to ensure that only copper filled on the surface of the substrate is left;
(b3) etching a cavity on the surface of the substrate, embedding a chip, filling a gap between the chip and the cavity, and finally manufacturing an RDL and a bonding pad on the surface of the chip;
(b4) and performing temporary bonding on the front surface of the substrate, using a carrier as a support to thin the back surface of the substrate, exposing the back surface of the TSV, exposing the back surface of the chip, covering the back surface of the substrate with a passivation layer, polishing to expose the TSV conductive column, and manufacturing the RDL and the bonding pad on the back surface of the substrate.
7. The liquid cooling heat dissipation process of PCB of claim 5, wherein the thickness of the back of the substrate in step (b) is reduced to 100 nm-700 um; the height of the cavity in the step (b) is 100 um-600 um.
8. The liquid cooling heat dissipation process of claim 5, wherein step (c) further comprises forming second solder balls on the pads on the back of the chip and interconnecting the micro-channel structures and the second solder balls on the back of the chip.
9. The liquid-cooled heat dissipation process for PCB of claim 6, wherein the diameter of the TSV hole of step (b1) is 1um to 1000um, and the depth is 10um to 1000 um; the insulating layer is silicon oxide or silicon nitride, and the thickness of the insulating layer ranges from 0.01 um to 100 um; the thickness of the seed layer is 0.001-100 um, and the seed layer is made of one of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
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