CN106505052A - Heat abstractor for insulated gate bipolar transistor - Google Patents
Heat abstractor for insulated gate bipolar transistor Download PDFInfo
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- CN106505052A CN106505052A CN201611020461.0A CN201611020461A CN106505052A CN 106505052 A CN106505052 A CN 106505052A CN 201611020461 A CN201611020461 A CN 201611020461A CN 106505052 A CN106505052 A CN 106505052A
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- radiating
- copper
- substrate
- alloy
- bipolar transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The invention discloses a kind of heat abstractor for insulated gate bipolar transistor, the device includes the first radiating subassembly and the second radiating subassembly；First radiating subassembly includes copper alloy substrate, laser welding layer, lead substrate, heat conduction lead, thermal insulation layer, copper sheet layer, copper base and anti-overflow obstruction groove；The first liquid alloy is provided between laser welding layer and copper alloy substrate, the second liquid alloy is provided between lead substrate and copper alloy substrate, the 3rd liquid alloy is provided between copper sheet layer and copper base, on copper base, the side contrary with the 3rd liquid alloy layer is provided with solid alloy, and the second radiating subassembly includes that substrate, circulating line and several radiating straight tubes are accepted in radiating；The first liquid alloy is provided with inside circulating line；The present invention realizes that using liquid metal and solid metallic the transmission of heat, small volume, heat are scattered and disappeared soon, can significantly solve the problems, such as that insulated gate bipolar transistor radiating is slow.
Description
Technical field
The present invention relates to technical field of heat dissipation, more particularly to a kind of heat abstractor for insulated gate bipolar transistor.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is by BJT
The compound full-control type of (Bipolar Junction Transistor, double pole triode) and insulating gate type field effect tube composition
Voltage driven type power semiconductor, has MOSFET (Metal-Oxide-Semiconductor Field-Effect concurrently
Transistor, metal-oxide half field effect transistor) high input impedance and GTR (Giant Transistor, power transistor)
Advantage of both low conduction voltage drop.IGBT is widely used in electric power as important energy conversion and the core devices of transmission
The fields such as system dc engineering, track traffic, intelligent grid, Aero-Space, electric automobile and new forms of energy equipment.
IGBT device has the features such as energy-conservation, convenient to install and maintain and stable radiating.Major part IGBT device application at present
In low-power mode, but IGBT device efficiency itself is low, and through-current capability is weak to cause its through-current capability to be restricted, and in low-power
During operation, IGBT hydraulic performance declines can be caused, loss is very quick, for the IGBT especially for costliness, with irreversible
Broken ring effect.With the breakthrough of high-power IGBT device technology, high-power IGBT carries the task of electric energy conversion.
In IGBT power conversion efficiencies, most of energy is used to generate heat at present, and is gone out by dissipation of radiating.IGBT is transported
During row, heat flow density is high, and radiating dissipates does not go out or radiate slowly, and the heat for staying in IGBT itself is more, causes local area heating collection
In so that IGBT device accelerates heat ageing；In addition the compound action of superposition magnetic field and electric field may cause to be lost to IGBT device
And damage.IGBT device heating problem restricts the device development of high-power IGBT for a long time, it is difficult to extensive efficient application is in big work(
Rate field of energy transfer.Thus the heat dissipation problem for how improving and solving IGBT becomes lifting IGBT device through-current capability, parameter
Performance boost and the technical barrier of high-power scale application.
Content of the invention
The goal of the invention of the present invention is to provide a kind of heat abstractor for insulated gate bipolar transistor, is broken off relations with solution
Operationally heat flow density height causes the slow problem that radiates to edge grid bipolar transistor.
Embodiments in accordance with the present invention provide a kind of heat abstractor for insulated gate bipolar transistor, including：The
One radiating subassembly and the second radiating subassembly located at the first radiating subassembly side；
First radiating subassembly includes copper alloy substrate, laser welding layer, lead substrate, heat conduction lead, insulating heat-conductive
Layer, copper sheet layer, copper base and anti-overflow obstruction groove；
The copper alloy substrate is connected to the side of the thermal insulation layer, and the laser welding layer is connected to the copper and closes
On gold base, for the copper alloy substrate is mutually welded with insulating gate type bipolar transistor, the laser welding layer and institute
State；
On the copper alloy substrate, one end of the heat conduction lead is connected the lead substrate connection with the lead substrate
Connect, between the lead substrate and the copper alloy substrate, be provided with the second liquid alloy；
The copper sheet layer is connected to the opposite side of the thermal insulation layer, and the copper base is connected with the copper sheet layer, institute
State and between copper sheet layer and the copper base, be provided with the 3rd liquid alloy；
On the copper base, contrary with the 3rd liquid alloy layer side is provided with solid alloy；
In the copper base, the capillary channel of the 3rd liquid alloy and the solid alloy is communicated with；
The anti-overflow obstruction groove sealing is located at the outside of the solid alloy；
Second radiating subassembly includes that substrate, circulating line and several radiating straight tubes are accepted in radiating；
The radiating is accepted substrate and is connected with the solid alloy；
The circulating line is embedded at the radiating and accepts inside substrate, and several radiating straight tubes are accepted with the radiating
Substrate is connected；
First liquid alloy is provided with inside the circulating line.
Preferably, air gap circulating transformer is provided with outside the circulating line.
Preferably, the circulating line includes radiating insulating copper pipe, and is connected to the radiating insulating copper pipe two ends
Connecting tube, the internal diameter of the connecting tube are more than the internal diameter of the radiating insulating copper pipe.
Preferably, the radiating insulating copper pipe is in M shapes.
Preferably, the area that the air gap circulating transformer is connected with the connecting tube located at the radiating insulating copper pipe
Domain.
Preferably, insulation shielding shell is provided with outside first radiating subassembly.
Preferably, the other end of the heat conduction lead is fixed on outside the insulation shielding through the insulation shielding shell
The outer wall of shell.
Preferably, several radiating straight tubes are spaced and be arranged in parallel.
A kind of heat abstractor for insulated gate bipolar transistor provided from above technical scheme, the present invention,
Including the first radiating subassembly and the second radiating subassembly located at the first radiating subassembly side；First radiating subassembly includes copper alloy base
Plate, laser welding layer, lead substrate, heat conduction lead, thermal insulation layer, copper sheet layer, copper base and anti-overflow obstruction groove；Copper alloy
Substrate connection is connected on copper alloy substrate in the side of thermal insulation layer, laser welding layer, for by copper alloy substrate with exhausted
Edge grid-type bipolar transistor is mutually welded, and is provided with the first liquid alloy, lead substrate between laser welding layer and copper alloy substrate
It is connected on copper alloy substrate, one end of heat conduction lead and lead substrate connection are provided between lead substrate and copper alloy substrate
Second liquid alloy, copper sheet layer are connected to the opposite side of thermal insulation layer, and copper base is connected with copper sheet layer, copper sheet layer and copper base
Between be provided with the 3rd liquid alloy, on copper base, the side contrary with the 3rd liquid alloy layer is provided with solid alloy, copper base
Interior, it is communicated with the capillary channel of the 3rd liquid alloy and solid alloy；Anti-overflow obstruction groove sealing is located at the outside of solid alloy；
Second radiating subassembly includes that substrate, circulating line and several radiating straight tubes are accepted in radiating；Radiating is accepted substrate and is connected with solid alloy
Connect；Circulating line is embedded at radiating and accepts inside substrate, and several radiating straight tubes are accepted substrate with radiating and are connected；In circulating line
Portion is provided with the first liquid alloy；The present invention realizes the transmission of heat, described device body using liquid metal and solid metallic
Product is little, it is not necessary to fan, and heat scatters and disappears soon, significantly solves the problems, such as that insulated gate bipolar transistor radiating is slow, improves insulated gate
The performance of bipolar transistor.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing for using is needed to be briefly described, it should be apparent that, drawings in the following description are only some enforcements of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can be being obtained according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the structural representation according to a heat abstractor for insulated gate bipolar transistor for being preferable to carry out exemplifying
Figure；
Fig. 2 is the radiating principle according to a heat abstractor for insulated gate bipolar transistor for being preferable to carry out exemplifying
Schematic diagram.
Illustrate：
Wherein, 1- connecting tubes；2- radiating straight tubes；3- insulated gate bipolar transistors；4- laser welding layers；The first liquid of 5-
Alloy；6- copper alloy substrates；7- lead substrates；The second liquid alloys of 8-；9- heat conduction leads；10- insulation shielding shells；11- is exhausted
Edge heat-conducting layer；12- copper sheet layers；The 3rd liquid alloys of 13-；14- capillary channels；15- copper bases；16- solid alloys；17- is anti-overflow
Obstruction groove；Substrate is accepted in 18- radiatings；19- radiating insulating copper pipes；20- air gap circulating transformers.
Specific embodiment
Accompanying drawing in below in conjunction with the embodiment of the present invention, to the embodiment of the present invention in technical scheme carry out clear, complete
Whole description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiment.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 and Fig. 2 is referred to, the embodiment of the present invention provides a kind of heat abstractor for insulated gate bipolar transistor,
The device includes：First radiating subassembly and the second radiating subassembly located at the first radiating subassembly side；
Wherein, the first radiating subassembly includes copper alloy substrate 6, laser welding layer 4, lead substrate 7, heat conduction lead 9, insulation
Heat-conducting layer 11, copper sheet layer 12, copper base 15 and anti-overflow obstruction groove 17；
Copper alloy substrate 6 is connected to the side of thermal insulation layer 11, and laser welding layer 4 is connected on copper alloy substrate 6, uses
In copper alloy substrate 6 is mutually welded with insulating gate type bipolar transistor 3, it is provided between laser welding layer 4 and copper alloy substrate 6
First liquid alloy 5；
Lead substrate 7 is connected on copper alloy substrate 6, and one end of heat conduction lead 9 is connected with lead substrate 7, lead substrate 7
The second liquid alloy 8 is provided between copper alloy substrate 6；
Copper sheet layer 12 is connected to the opposite side of thermal insulation layer 11, and copper base 15 is connected with copper sheet layer 12, copper sheet layer 12 with
The 3rd liquid alloy 13, the 3rd liquid alloy is provided between copper base 15；
On copper base 15, contrary with the 3rd liquid alloy layer 13 side is provided with solid alloy 16；
In copper base 15, the capillary channel 14 of the 3rd liquid alloy 13 and solid alloy 16 is communicated with；
Anti-overflow obstruction groove 17 sealing is located at the outside of solid alloy 16；
Wherein, the second radiating subassembly includes that substrate 18, circulating line and several radiating straight tubes 2 are accepted in radiating；
Radiating is accepted substrate 18 and is connected with solid alloy 16；
Circulating line is embedded at radiating and accepts inside substrate 18, and several radiating straight tubes 2 are accepted substrate 18 with radiating and are connected；
The first liquid alloy 5 is provided with inside circulating line.
Heat abstractor for insulated gate bipolar transistor provided in an embodiment of the present invention, operation principle are as follows：
Insulating gate type bipolar transistor 3 generates heat after running, heat transfer to laser welding layer 4, and laser welding layer 4 is by warm
Amount is transferred to the first liquid alloy 5, and the mode of heat continuation liquid is transferred to copper alloy substrate 6, copper by the first liquid alloy 5
Heat point two parts are sent out by alloy substrate 6；
A part of heat is transferred to the second liquid alloy 8 by copper alloy substrate 6, and the second liquid alloy 8 is by heat transfer
To lead substrate 7, this part of junction temperature and stagnation of pathogenic heat amount are transferred to heat conduction lead 9 by lead substrate 7, and then are transferred to outside device
Portion；
Another part heat is transferred to copper sheet layer 12 by the low-resistance heat-conducting layer 11 that insulate, and copper sheet layer 12 is by heat by liquefaction
The 3rd liquid alloy 13 transmit, heat is directly passed at a temperature of high load capacity by the 3rd liquid alloy 13 by capillary channel 14
Solid alloy 16 is handed to, solid alloy 16 itself has the ability of transmission heat, and after melting with the 3rd liquid alloy 13, heat transfer
Effect is improved, and is then transferred heat to outside transfer device by the cooperation of circulating line and radiating straight tube 2.
Preferably, in the described heat abstractor for insulated gate bipolar transistor, air gap is provided with outside circulating line
Circulating transformer 20, air gap circulating transformer 20 can make the first liquid alloy 5 inside circulating line conductive, make the first liquid
Alloy 5 is acted on by Ampere force in magnetic field, so as to flow in circulating line inner loop, so as to promote the first liquid alloy
5 transfer heat to the straight tube 2 that radiates, and the heat for accelerating insulating gate type bipolar transistor 3 scatters and disappears.
Preferably, the described heat abstractor for insulated gate bipolar transistor, circulating line include radiating insulating copper
Pipe 19, and the connecting tube 1 at 19 two ends of radiating insulating copper pipe is connected to, the internal diameter of connecting tube 1 is more than radiating insulating copper pipe 19
Internal diameter.The region that air gap circulating transformer 20 is connected with connecting tube 1 located at radiating insulating copper pipe 19.Connecting tube 1 is by increase
Caliber accelerating flow velocity of first liquid alloy 5 in radiating insulating copper pipe 19, so as to improving radiating effect.
Preferably, the described heat abstractor for insulated gate bipolar transistor, radiating insulating copper pipe 19 are counted in M shapes
Individual radiating straight tube 2 is spaced and be arranged in parallel, can on the premise of volume is reduced increasing heat radiation area, so as to heat radiation is imitated
Really.
Preferably, the described heat abstractor for insulating gate type bipolar transistor, is provided with outside the first radiating subassembly
Insulation shielding shell 10.
Specifically, insulation shielding shell 10 can avoid dust from falling into inside the first radiating subassembly, so as to affect insulated gate
The performance of type bipolar transistor 3.
Preferably, the other end of heat conduction lead 9 is fixed on the outer of insulation shielding shell 10 through insulation shielding shell 10
Wall, so as to distribute heat to outside device.
Preferably, in the described heat abstractor for insulating gate type bipolar transistor, the first liquid alloy 5, second
Liquid alloy 8 and the 3rd liquid alloy 13 can be the alloys of existing gallium or indium.Gallium and indium in the alloy of gallium or indium
Ratio different, cause which at different temperatures in liquid condition, such as the first liquid alloy 5 can be selected at 10 DEG C -30 DEG C
The alloy being in a liquid state, the second liquid alloy 8 and the 3rd liquid alloy 13 can be from the alloys being in a liquid state at 80 DEG C -100 DEG C.
The alloy good heat conduction effect of gallium or indium, can lift the radiating effect to insulating gate type bipolar transistor 3.
Preferably, in the heat abstractor for insulating gate type bipolar transistor, the material of thermal insulation layer 11 is
Epoxy resin or pottery.The thermal resistance of epoxy resin or pottery is little, good heat conductivity, while insulation effect is good, can anti-leak-stopping
The generation of electrical phenomena.
Preferably, the heat abstractor for insulating gate type bipolar transistor, the material of anti-overflow obstruction groove 17 is pottery
Porcelain.Sintering is formed pottery at relatively high temperatures, heat-resist, will not be caused to damage because of long-time hot environment, it is to avoid the 3rd liquid
State alloy 13 overflows.
From above technical scheme, a kind of radiating for insulated gate bipolar transistor provided in an embodiment of the present invention
Device, including the first radiating subassembly and the second radiating subassembly located at the first radiating subassembly side；First radiating subassembly includes copper
Alloy substrate 6, laser welding layer 4, lead substrate 7, heat conduction lead 9, thermal insulation layer 11, copper sheet layer 12, copper base 15 and
Anti-overflow obstruction groove 17；Copper alloy substrate 6 is connected to the side of thermal insulation layer 11, and laser welding layer 4 is connected to copper alloy substrate 6
On, for copper alloy substrate 6 is mutually welded with insulating gate type bipolar transistor 3, laser welding layer 4 and copper alloy substrate 6 it
Between be provided with the first liquid alloy 5；Lead substrate 7 is connected on copper alloy substrate 6, and one end of heat conduction lead 9 is connected with lead substrate 7
Connect, between lead substrate 7 and copper alloy substrate 6, be provided with the second liquid alloy 8；Copper sheet layer 12 is connected to the another of thermal insulation layer 11
Side, copper base 15 are connected with copper sheet layer 12, are provided with the 3rd liquid alloy 13 between copper sheet layer 12 and copper base 15；Copper base 15
On, contrary with the 3rd liquid alloy layer 13 side is provided with solid alloy 16；In copper base 15, the conjunction of the 3rd liquid is communicated with
Gold 13 and the capillary channel 14 of solid alloy 16；Anti-overflow obstruction groove 17 sealing is located at the outside of solid alloy 16；Second radiating group
Part includes that substrate 18, circulating line and several radiating straight tubes 2 are accepted in radiating；Radiating is accepted substrate 18 and is connected with solid alloy 16；
Circulating line is embedded at radiating and accepts inside substrate 18, and several radiating straight tubes 2 are accepted substrate 18 with radiating and are connected；Circulating line
Inside is provided with the first liquid alloy 5；The present invention realizes the transmission of heat, described device using liquid metal and solid metallic
Small volume, it is not necessary to fan, heat are scattered and disappeared soon, significantly solve the problems, such as that insulated gate bipolar transistor radiating is slow, improve insulation
The performance of grid bipolar transistor.
Those skilled in the art will readily occur to its of the present invention after considering description and putting into practice invention disclosed herein
Its embodiment.The application is intended to any modification of the present invention, purposes or adaptations, these modifications, purposes or
Person's adaptations follow the general principle of the present invention and including the undocumented common knowledge in the art of the present invention
Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the precision architecture for being described above and being shown in the drawings is the invention is not limited in, and
And various modifications and changes can carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (8)
1. a kind of heat abstractor for insulated gate bipolar transistor, it is characterised in that described device includes：First radiating group
Part and the second radiating subassembly located at the first radiating subassembly side；
First radiating subassembly include copper alloy substrate (6), laser welding layer (4), lead substrate (7), heat conduction lead (9),
Thermal insulation layer (11), copper sheet layer (12), copper base (15) and anti-overflow obstruction groove (17)；
Copper alloy substrate (6) are connected to the side of the thermal insulation layer (11), and laser welding layer (4) are connected to institute
State on copper alloy substrate (6), for mutually welding the copper alloy substrate (6) with insulating gate type bipolar transistor (3), described
The first liquid alloy (5) is provided between laser welding layer (4) and the copper alloy substrate (6)；
Lead substrate (7) are connected on the copper alloy substrate (6), the one end of heat conduction lead (9) and the lead
Substrate (7) connects, and is provided with the second liquid alloy (8) between lead substrate (7) and the copper alloy substrate (6)；
Copper sheet layer (12) are connected to the opposite side of the thermal insulation layer (11), copper base (15) and the copper sheet layer
(12) connect, between copper sheet layer (12) and the copper base (15), be provided with the 3rd liquid alloy (13)；
On copper base (15), contrary with the 3rd liquid alloy layer (13) side is provided with solid alloy (16)；
In copper base (15), the capillary channel of the 3rd liquid alloy (13) and the solid alloy (16) is communicated with
(14)；
Anti-overflow obstruction groove (17) sealing is located at the outside of the solid alloy (16)；
Second radiating subassembly includes that substrate (18), circulating line and several radiating straight tubes (2) are accepted in radiating；
The radiating is accepted substrate (18) and is connected with the solid alloy (16)；
The circulating line is embedded at the radiating and accepts substrate (18) inside, several radiatings straight tube (2) and the radiatings
Accept substrate (18) to be connected；
The first liquid alloy (5) are provided with inside the circulating line.
2. the heat abstractor for insulated gate bipolar transistor according to claim 1, it is characterised in that the circulation
Pipeline external is provided with air gap circulating transformer (20).
3. the heat abstractor for insulated gate bipolar transistor according to claim 2, it is characterised in that the circulation
Pipeline includes radiating insulating copper pipe (19), and is connected to the connecting tube (1) at radiating insulating copper pipe (19) two ends, the company
Internal diameter of the internal diameter of adapter (1) more than radiating insulating copper pipe (19).
4. the heat abstractor for insulated gate bipolar transistor according to claim 3, it is characterised in that the radiating
Insulation copper pipe (19) extends in M shapes.
5. the heat abstractor for insulated gate bipolar transistor according to claim 3, it is characterised in that the air gap
The region that circulating transformer (20) is connected with the connecting tube (1) located at radiating insulating copper pipe (19).
6. the heat abstractor for insulated gate bipolar transistor according to claim 1, it is characterised in that described first
Insulation shielding shell (10) is provided with outside radiating subassembly.
7. the heat abstractor for insulated gate bipolar transistor according to claim 6, it is characterised in that the heat conduction
The other end of lead (9) is fixed on the outer wall of insulation shielding shell (10) through insulation shielding shell (10).
8. the heat abstractor for insulated gate bipolar transistor according to claim 1, it is characterised in that described several
Radiating straight tube (2) is spaced and be arranged in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611020461.0A CN106505052B (en) | 2016-11-17 | 2016-11-17 | Radiator for insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611020461.0A CN106505052B (en) | 2016-11-17 | 2016-11-17 | Radiator for insulated gate bipolar transistor |
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| Publication Number | Publication Date |
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| CN106505052A true CN106505052A (en) | 2017-03-15 |
| CN106505052B CN106505052B (en) | 2019-02-15 |
Family
ID=58325038
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611020461.0A Active CN106505052B (en) | 2016-11-17 | 2016-11-17 | Radiator for insulated gate bipolar transistor |
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| Country | Link |
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| CN (1) | CN106505052B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980859A (en) * | 2019-03-18 | 2019-07-05 | 深圳市易为派科技有限公司 | A kind of vehicle motor controller assemble method |
| CN110010570A (en) * | 2018-12-25 | 2019-07-12 | 杭州臻镭微波技术有限公司 | A kind of radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation |
| CN110534488A (en) * | 2019-08-25 | 2019-12-03 | 大连理工大学 | A kind of magnetic fluid pump installation and test method for IGBT heat dissipation |
| CN110783288A (en) * | 2019-09-29 | 2020-02-11 | 华进半导体封装先导技术研发中心有限公司 | Chip heat dissipation packaging structure |
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| US20090141451A1 (en) * | 2007-11-21 | 2009-06-04 | Shogo Mori | Heat dissipation apparatus |
| CN203038911U (en) * | 2013-01-07 | 2013-07-03 | 北京依米康散热技术有限公司 | Heat radiation device based on liquid metal |
| CN206194732U (en) * | 2016-11-17 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Heat radiator for be used for insulated -gate bipolar transistor |
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2016
- 2016-11-17 CN CN201611020461.0A patent/CN106505052B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090141451A1 (en) * | 2007-11-21 | 2009-06-04 | Shogo Mori | Heat dissipation apparatus |
| CN203038911U (en) * | 2013-01-07 | 2013-07-03 | 北京依米康散热技术有限公司 | Heat radiation device based on liquid metal |
| CN206194732U (en) * | 2016-11-17 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Heat radiator for be used for insulated -gate bipolar transistor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010570A (en) * | 2018-12-25 | 2019-07-12 | 杭州臻镭微波技术有限公司 | A kind of radio frequency microsystem assembly manufacture craft of liquid-immersed heat dissipation |
| CN110010570B (en) * | 2018-12-25 | 2021-01-26 | 浙江集迈科微电子有限公司 | Manufacturing process of radio frequency micro-system assembly for liquid immersion heat dissipation |
| CN109980859A (en) * | 2019-03-18 | 2019-07-05 | 深圳市易为派科技有限公司 | A kind of vehicle motor controller assemble method |
| CN110534488A (en) * | 2019-08-25 | 2019-12-03 | 大连理工大学 | A kind of magnetic fluid pump installation and test method for IGBT heat dissipation |
| CN110534488B (en) * | 2019-08-25 | 2020-11-13 | 大连理工大学 | Magnetic fluid pump device for IGBT heat dissipation and testing method |
| CN110783288A (en) * | 2019-09-29 | 2020-02-11 | 华进半导体封装先导技术研发中心有限公司 | Chip heat dissipation packaging structure |
| CN110783288B (en) * | 2019-09-29 | 2021-10-22 | 华进半导体封装先导技术研发中心有限公司 | Chip heat dissipation packaging structure |
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| Publication number | Publication date |
|---|---|
| CN106505052B (en) | 2019-02-15 |
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