CN106505052B - Radiator for insulated gate bipolar transistor - Google Patents
Radiator for insulated gate bipolar transistor Download PDFInfo
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- CN106505052B CN106505052B CN201611020461.0A CN201611020461A CN106505052B CN 106505052 B CN106505052 B CN 106505052B CN 201611020461 A CN201611020461 A CN 201611020461A CN 106505052 B CN106505052 B CN 106505052B
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- bipolar transistor
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Abstract
The invention discloses a kind of radiator for insulated gate bipolar transistor, which includes the first radiating subassembly and the second radiating subassembly；First radiating subassembly includes copper alloy substrate, laser welding layer, lead substrate, thermally conductive lead, thermal insulation layer, copper sheet layer, copper base and anti-overflow obstruction slot；The first liquid alloy is equipped between laser welding layer and copper alloy substrate, the second liquid alloy is equipped between lead substrate and copper alloy substrate, third liquid alloy is equipped between copper sheet layer and copper base, the side opposite with third liquid alloy layer is equipped with solid alloy on copper base, and the second radiating subassembly includes that substrate, circulating line and several heat dissipation straight tubes are accepted in heat dissipation；The first liquid alloy is equipped with inside circulating line；The present invention realizes the transmitting of heat using liquid metal and solid metallic, and small in size, heat loss is fast, and it is slow can significantly to solve the problems, such as that insulated gate bipolar transistor radiates.
Description
Technical field
The present invention relates to technical field of heat dissipation, in particular to a kind of radiator for insulated gate bipolar transistor.
Background technique
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is by BJT
The compound full-control type of (Bipolar Junction Transistor, double pole triode) and insulating gate type field effect tube composition
Voltage driven type power semiconductor has MOSFET (Metal-Oxide-Semiconductor Field-Effect concurrently
Transistor, metal-oxide half field effect transistor) high input impedance and GTR (Giant Transistor, power transistor)
Advantage of both low conduction voltage drop.Core devices of the IGBT as important energy conversion and transmission, are widely used in electric power
The fields such as system dc engineering, rail traffic, smart grid, aerospace, electric car and new energy equipment.
IGBT device has the characteristics that energy saving, convenient to install and maintain and heat dissipation is stablized.Major part IGBT device application at present
In low-power mode, but IGBT device low efficiency itself, through-current capability is weak to cause its through-current capability to be restricted, and in low-power
When operation, the decline of IGBT performance will lead to, loss is very quick, for expensive IGBT, has irreversible
Broken ring effect.With the breakthrough of high-power IGBT device technology, high-power IGBT carries the task of electric energy conversion.
Most of energy is used to generate heat in IGBT power conversion efficiency at present, and is dissipated away by heat dissipation.IGBT fortune
Heat flow density is high when row, and heat dissipation, which dissipates, does not go out or radiate slowly, and the heat for staying in IGBT itself is more, leads to local area fever collection
In, so that IGBT device accelerates heat ageing；In addition being superimposed magnetic field and the compound action of electric field may cause to be lost to IGBT device
And damage.IGBT device heating problem restricts the device development of high-power IGBT for a long time, is difficult extensive efficient application in big function
Rate field of energy transfer.The heat dissipation problem for thus how improving and solving IGBT, which becomes, promotes IGBT device through-current capability, parameter
The technical problem of performance boost and high-power scale application.
Summary of the invention
Goal of the invention of the invention is to provide a kind of radiator for insulated gate bipolar transistor, be broken off relations with solution
Heat flow density height leads to the slow problem that radiates to edge grid bipolar junction transistor at runtime.
Embodiment according to the present invention provides a kind of radiator for insulated gate bipolar transistor, comprising: the
One radiating subassembly and the second radiating subassembly set on first radiating subassembly side；
First radiating subassembly includes copper alloy substrate, laser welding layer, lead substrate, thermally conductive lead, insulating heat-conductive
Layer, copper sheet layer, copper base and anti-overflow obstruction slot；
The copper alloy substrate is connected to the side of the thermal insulation layer, and the laser welding layer is connected to the copper and closes
On gold base, for the copper alloy substrate and insulating gate type bipolar transistor mutually to be welded, the laser welding layer and institute
It states and is equipped with the first liquid alloy between copper alloy substrate；
The lead substrate is connected on the copper alloy substrate, and one end of the thermally conductive lead and the lead substrate connect
It connects, the second liquid alloy is equipped between the lead substrate and the copper alloy substrate；
The copper sheet layer is connected to the other side of the thermal insulation layer, and the copper base is connect with the copper sheet layer, institute
It states and is equipped with third liquid alloy between copper sheet layer and the copper base；
On the copper base, the side opposite with the third liquid alloy layer is equipped with solid alloy；
In the copper base, equipped with the capillary channel for being connected to the third liquid alloy and the solid alloy；
The anti-overflow obstruction slot sealing is set to the outside of the solid alloy；
Second radiating subassembly includes that substrate, circulating line and several heat dissipation straight tubes are accepted in heat dissipation；
The heat dissipation is accepted substrate and is connect with the solid alloy；
The circulating line is embedded at the heat dissipation and accepts inside substrate, and several heat dissipation straight tubes and the heat dissipation are accepted
Substrate is connected；
First liquid alloy is equipped with inside the circulating line.
Preferably, air gap circulating transformer is equipped with outside the circulating line.
Preferably, the circulating line includes radiating insulating copper pipe, and is connected to radiating insulating copper pipe both ends
Connecting tube, the internal diameter of the connecting tube are greater than the internal diameter of the radiating insulating copper pipe.
Preferably, the radiating insulating copper pipe is in M shape.
Preferably, the air gap circulating transformer is set to the area that the radiating insulating copper pipe is connected with the connecting tube
Domain.
Preferably, insulation shielding shell is equipped with outside first radiating subassembly.
Preferably, the other end of the thermally conductive lead passes through the insulation shielding shell, is fixed on outside the insulation shielding
The outer wall of shell.
Preferably, several heat dissipation straight tubes are spaced apart from each other and are arranged in parallel.
From the above technical scheme, a kind of radiator for insulated gate bipolar transistor provided by the invention,
The second radiating subassembly including the first radiating subassembly and set on the first radiating subassembly side；First radiating subassembly includes copper alloy base
Plate, laser welding layer, lead substrate, thermally conductive lead, thermal insulation layer, copper sheet layer, copper base and anti-overflow obstruction slot；Copper alloy
Substrate is connected to the side of thermal insulation layer, and laser welding layer is connected on copper alloy substrate, for by copper alloy substrate and absolutely
Edge grid-type bipolar junction transistor mutually welds, and the first liquid alloy, lead substrate are equipped between laser welding layer and copper alloy substrate
It is connected on copper alloy substrate, one end of thermally conductive lead is connect with lead substrate, is equipped between lead substrate and copper alloy substrate
Second liquid alloy, copper sheet layer are connected to the other side of thermal insulation layer, and copper base is connect with copper sheet layer, copper sheet layer and copper base
Between be equipped with third liquid alloy, on copper base, the side opposite with third liquid alloy layer is equipped with solid alloy, copper base
It is interior, the capillary channel equipped with connection third liquid alloy and solid alloy；Anti-overflow obstruction slot sealing is set to the outside of solid alloy；
Second radiating subassembly includes that substrate, circulating line and several heat dissipation straight tubes are accepted in heat dissipation；Substrate is accepted in heat dissipation and solid alloy connects
It connects；Circulating line is embedded at heat dissipation and accepts inside substrate, and several heat dissipation straight tubes accept substrate with heat dissipation and are connected；In circulating line
Portion is equipped with the first liquid alloy；The present invention realizes the transmitting of heat, described device body using liquid metal and solid metallic
Product is small, does not need fan, and heat loss is fast, and it is slow significantly to solve the problems, such as that insulated gate bipolar transistor radiates, and improves insulated gate
The performance of bipolar junction transistor.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structural representation that the radiator for insulated gate bipolar transistor exemplified is preferably implemented according to one
Figure；
Fig. 2 is the radiating principle that the radiator for insulated gate bipolar transistor exemplified is preferably implemented according to one
Schematic diagram.
It illustrates:
Wherein, 1- connecting tube；2- heat dissipation straight tube；3- insulated gate bipolar transistor；4- laser welding layer；The first liquid of 5-
Alloy；6- copper alloy substrate；7- lead substrate；The second liquid alloy of 8-；The thermally conductive lead of 9-；10- insulation shielding shell；11- is exhausted
Edge heat-conducting layer；12- copper sheet layer；13- third liquid alloy；14- capillary channel；15- copper base；16- solid alloy；17- is anti-overflow
Block slot；Substrate is accepted in 18- heat dissipation；19- radiating insulating copper pipe；20- air gap circulating transformer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Whole description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 1 and Fig. 2 are please referred to, the embodiment of the present invention provides a kind of radiator for insulated gate bipolar transistor,
The device includes: the first radiating subassembly and the second radiating subassembly set on the first radiating subassembly side；
Wherein, the first radiating subassembly includes copper alloy substrate 6, laser welding layer 4, lead substrate 7, thermally conductive lead 9, insulation
Heat-conducting layer 11, copper sheet layer 12, copper base 15 and anti-overflow obstruction slot 17；
Copper alloy substrate 6 is connected to the side of thermal insulation layer 11, and laser welding layer 4 is connected on copper alloy substrate 6, uses
It welds in by copper alloy substrate 6 and 3 phase of insulating gate type bipolar transistor, is equipped between laser welding layer 4 and copper alloy substrate 6
First liquid alloy 5；
Lead substrate 7 is connected on copper alloy substrate 6, and one end of thermally conductive lead 9 is connect with lead substrate 7, lead substrate 7
The second liquid alloy 8 is equipped between copper alloy substrate 6；
Copper sheet layer 12 is connected to the other side of thermal insulation layer 11, and copper base 15 is connect with copper sheet layer 12, copper sheet layer 12 with
Third liquid alloy 13, third liquid alloy are equipped between copper base 15；
On copper base 15, the side opposite with third liquid alloy layer 13 is equipped with solid alloy 16；
In copper base 15, the capillary channel 14 equipped with connection third liquid alloy 13 and solid alloy 16；
Anti-overflow obstruction slot 17 sealing is set to the outside of solid alloy 16；
Wherein, the second radiating subassembly includes that substrate 18, circulating line and several heat dissipation straight tubes 2 are accepted in heat dissipation；
Heat dissipation is accepted substrate 18 and is connect with solid alloy 16；
Circulating line is embedded at heat dissipation and accepts inside substrate 18, and several heat dissipation straight tubes 2 accept substrate 18 with heat dissipation and are connected；
The first liquid alloy 5 is equipped with inside circulating line.
Radiator provided in an embodiment of the present invention for insulated gate bipolar transistor, working principle are as follows:
Insulating gate type bipolar transistor 3 generates heat after running, and heat transfer to laser welding layer 4, laser welding layer 4 will be warm
Amount is transferred to the first liquid alloy 5, and the first liquid alloy 5 continues heat to be transferred to copper alloy substrate 6, copper with the mode of liquid
Heat is divided into two parts by alloy substrate 6 to be sent out；
A part of heat is transferred to the second liquid alloy 8 by copper alloy substrate 6, and the second liquid alloy 8 is by heat transfer
To lead substrate 7, this part of junction temperature and knot heat transfer to thermally conductive lead 9 are transferred to outside device by lead substrate 7
Portion；
Another part heat is transferred to copper sheet layer 12 by the low-resistance heat-conducting layer 11 that insulate, and heat is passed through liquefaction by copper sheet layer 12
Third liquid alloy 13 transmit, third liquid alloy 13 directly passes heat at a temperature of high load capacity, through capillary channel 14
It is handed to solid alloy 16, solid alloy 16 itself has the ability of transmitting heat, and after being melted with third liquid alloy 13, heat transfer
Effect is improved, and is then transferred heat to outside transfer device by the cooperation of circulating line and the straight tube 2 that radiates.
Preferably, in the radiator for insulated gate bipolar transistor, air gap is equipped with outside circulating line
Circulating transformer 20, air gap circulating transformer 20 can make the first liquid alloy 5 inside circulating line conductive, make the first liquid
Alloy 5 in magnetic field by the effect of Ampere force, to be circulated inside circulating line, to promote the first liquid alloy
5 transfer heat to heat dissipation straight tube 2, accelerate the heat loss of insulating gate type bipolar transistor 3.
Preferably, the radiator for insulated gate bipolar transistor, circulating line include radiating insulating copper
Pipe 19, and it is connected to the connecting tube 1 at 19 both ends of radiating insulating copper pipe, the internal diameter of connecting tube 1 is greater than radiating insulating copper pipe 19
Internal diameter.Air gap circulating transformer 20 is set to the region that radiating insulating copper pipe 19 is connected with connecting tube 1.Connecting tube 1 passes through increase
Caliber accelerates the first liquid alloy 5 in the flow velocity of radiating insulating copper pipe 19, thus improving radiating effect.
Preferably, the radiator for insulated gate bipolar transistor, radiating insulating copper pipe 19 are in M shape, number
A heat dissipation straight tube 2 is spaced apart from each other and is arranged in parallel, can under the premise of reducing volume increasing heat radiation area, thus heat radiation imitate
Fruit.
Preferably, the radiator for insulating gate type bipolar transistor, the first radiating subassembly outside are equipped with
Insulation shielding shell 10.
Specifically, insulation shielding shell 10 can be fallen into inside the first radiating subassembly to avoid dust, to influence insulated gate
The performance of type bipolar junction transistor 3.
Preferably, the other end of thermally conductive lead 9 passes through insulation shielding shell 10, is fixed on the outer of insulation shielding shell 10
Wall, to distribute heat to outside device.
Preferably, in the radiator for insulating gate type bipolar transistor, the first liquid alloy 5, second
Liquid alloy 8 and third liquid alloy 13 can be the alloy of existing gallium or indium.Gallium and indium in the alloy of gallium or indium
Ratio it is different, lead to it is in liquid condition at different temperatures, and such as the first liquid alloy 5 can be selected at 10 DEG C -30 DEG C
The alloy being in a liquid state, the second liquid alloy 8 and third liquid alloy 13 can select the alloy being in a liquid state at 80 DEG C -100 DEG C.
The alloy good heat conduction effect of gallium or indium, can promote the heat dissipation effect to insulating gate type bipolar transistor 3.
Preferably, in the radiator for insulating gate type bipolar transistor, the material of thermal insulation layer 11 is
Epoxy resin or ceramics.The thermal resistance of epoxy resin or ceramics is small, good heat conductivity, while insulation effect is good, can anti-leak-stopping
The generation of electrical phenomena.
Preferably, the material of the radiator for insulating gate type bipolar transistor, anti-overflow obstruction slot 17 is pottery
Porcelain.Ceramics are sintered at relatively high temperatures, heat-resist, will not be damaged because of long-time hot environment, be avoided third liquid
State alloy 13 overflows.
From the above technical scheme, a kind of heat dissipation for insulated gate bipolar transistor provided in an embodiment of the present invention
Device, the second radiating subassembly including the first radiating subassembly and set on the first radiating subassembly side；First radiating subassembly includes copper
Alloy substrate 6, laser welding layer 4, lead substrate 7, thermally conductive lead 9, thermal insulation layer 11, copper sheet layer 12, copper base 15 and
Anti-overflow obstruction slot 17；Copper alloy substrate 6 is connected to the side of thermal insulation layer 11, and laser welding layer 4 is connected to copper alloy substrate 6
On, for copper alloy substrate 6 and 3 phase of insulating gate type bipolar transistor to be welded, laser welding layer 4 and copper alloy substrate 6 it
Between be equipped with the first liquid alloy 5；Lead substrate 7 is connected on copper alloy substrate 6, and one end of thermally conductive lead 9 and lead substrate 7 connect
It connects, the second liquid alloy 8 is equipped between lead substrate 7 and copper alloy substrate 6；Copper sheet layer 12 is connected to the another of thermal insulation layer 11
Side, copper base 15 are connect with copper sheet layer 12, and third liquid alloy 13 is equipped between copper sheet layer 12 and copper base 15；Copper base 15
On, the side opposite with third liquid alloy layer 13 is equipped with solid alloy 16；In copper base 15, it is equipped with connection third liquid and closes
The capillary channel 14 of gold 13 and solid alloy 16；Anti-overflow obstruction slot 17 sealing is set to the outside of solid alloy 16；Second heat dissipation group
Part includes that substrate 18, circulating line and several heat dissipation straight tubes 2 are accepted in heat dissipation；Heat dissipation is accepted substrate 18 and is connect with solid alloy 16；
Circulating line is embedded at heat dissipation and accepts inside substrate 18, and several heat dissipation straight tubes 2 accept substrate 18 with heat dissipation and are connected；Circulating line
Inside is equipped with the first liquid alloy 5；The present invention realizes the transmitting of heat, described device using liquid metal and solid metallic
It is small in size, fan is not needed, heat loss is fast, and it is slow significantly to solve the problems, such as that insulated gate bipolar transistor radiates, and improves insulation
The performance of grid bipolar junction transistor.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to of the invention its
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the invention, these modifications, purposes or
Person's adaptive change follows general principle of the invention and including the undocumented common knowledge in the art of the present invention
Or conventional techniques.The description and examples are only to be considered as illustrative, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be understood that the present invention is not limited to the precise structure already described above and shown in the accompanying drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present invention is limited only by the attached claims.
Claims (8)
1. a kind of radiator for insulated gate bipolar transistor, which is characterized in that described device includes: the first heat dissipation group
Part and the second radiating subassembly set on first radiating subassembly side；
First radiating subassembly include copper alloy substrate (6), laser welding layer (4), lead substrate (7), thermally conductive lead (9),
Thermal insulation layer (11), copper sheet layer (12), copper base (15) and anti-overflow obstruction slot (17)；
The copper alloy substrate (6) is connected to the side of the thermal insulation layer (11), and the laser welding layer (4) is connected to institute
It states on copper alloy substrate (6), it is described for mutually welding the copper alloy substrate (6) and insulating gate type bipolar transistor (3)
The first liquid alloy (5) are equipped between laser welding layer (4) and the copper alloy substrate (6)；
The lead substrate (7) is connected on the copper alloy substrate (6), one end of the thermally conductive lead (9) and the lead
Substrate (7) connection, is equipped with the second liquid alloy (8) between the lead substrate (7) and the copper alloy substrate (6)；
The copper sheet layer (12) is connected to the other side of the thermal insulation layer (11), the copper base (15) and the copper sheet layer
(12) it connects, is equipped with third liquid alloy (13) between the copper sheet layer (12) and the copper base (15)；
On the copper base (15), the side opposite with third liquid alloy layer (13) is equipped with solid alloy (16)；
In the copper base (15), it is equipped with the capillary channel of the connection third liquid alloy (13) and the solid alloy (16)
(14)；
Anti-overflow obstruction slot (17) sealing is set to the outside of the solid alloy (16)；
Second radiating subassembly includes that substrate (18), circulating line and several heat dissipation straight tubes (2) are accepted in heat dissipation；
The heat dissipation is accepted substrate (18) and is connect with the solid alloy (16)；
The circulating line is embedded at the heat dissipation and accepts substrate (18) inside, several heat dissipation straight tubes (2) and the heat dissipation
Substrate (18) are accepted to be connected；
First liquid alloy (5) is equipped with inside the circulating line.
2. the radiator according to claim 1 for insulated gate bipolar transistor, which is characterized in that the circulation
Pipeline external is equipped with air gap circulating transformer (20).
3. the radiator according to claim 2 for insulated gate bipolar transistor, which is characterized in that the circulation
Pipeline includes radiating insulating copper pipe (19), and is connected to the connecting tube (1) at radiating insulating copper pipe (19) both ends, the company
The internal diameter for taking over (1) is greater than the internal diameter of the radiating insulating copper pipe (19).
4. the radiator according to claim 3 for insulated gate bipolar transistor, which is characterized in that the heat dissipation
Copper pipe (19) are insulated in the extension of M shape.
5. the radiator according to claim 3 for insulated gate bipolar transistor, which is characterized in that the air gap
Circulating transformer (20) is set to the region that the radiating insulating copper pipe (19) is connected with the connecting tube (1).
6. the radiator according to claim 1 for insulated gate bipolar transistor, which is characterized in that described first
Insulation shielding shell (10) are equipped with outside radiating subassembly.
7. the radiator according to claim 6 for insulated gate bipolar transistor, which is characterized in that described thermally conductive
The other end of lead (9) passes through the insulation shielding shell (10), is fixed on the outer wall of the insulation shielding shell (10).
8. the radiator according to claim 1 for insulated gate bipolar transistor, which is characterized in that described several
Heat dissipation straight tube (2) is spaced apart from each other and is arranged in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611020461.0A CN106505052B (en) | 2016-11-17 | 2016-11-17 | Radiator for insulated gate bipolar transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611020461.0A CN106505052B (en) | 2016-11-17 | 2016-11-17 | Radiator for insulated gate bipolar transistor |
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| CN106505052A CN106505052A (en) | 2017-03-15 |
| CN106505052B true CN106505052B (en) | 2019-02-15 |
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| CN201611020461.0A Active CN106505052B (en) | 2016-11-17 | 2016-11-17 | Radiator for insulated gate bipolar transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110010570B (en) * | 2018-12-25 | 2021-01-26 | 浙江集迈科微电子有限公司 | Manufacturing process of radio frequency micro-system assembly for liquid immersion heat dissipation |
| CN109980859A (en) * | 2019-03-18 | 2019-07-05 | 深圳市易为派科技有限公司 | A kind of vehicle motor controller assemble method |
| CN110534488B (en) * | 2019-08-25 | 2020-11-13 | 大连理工大学 | Magnetic fluid pump device for IGBT heat dissipation and testing method |
| CN110783288B (en) * | 2019-09-29 | 2021-10-22 | 华进半导体封装先导技术研发中心有限公司 | Chip heat dissipation packaging structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203038911U (en) * | 2013-01-07 | 2013-07-03 | 北京依米康散热技术有限公司 | Heat radiation device based on liquid metal |
| CN206194732U (en) * | 2016-11-17 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Heat radiator for be used for insulated -gate bipolar transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5070014B2 (en) * | 2007-11-21 | 2012-11-07 | 株式会社豊田自動織機 | Heat dissipation device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203038911U (en) * | 2013-01-07 | 2013-07-03 | 北京依米康散热技术有限公司 | Heat radiation device based on liquid metal |
| CN206194732U (en) * | 2016-11-17 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Heat radiator for be used for insulated -gate bipolar transistor |
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