CN201788962U - Radiating structure of radiator and device adopting radiating structure - Google Patents
Radiating structure of radiator and device adopting radiating structure Download PDFInfo
- Publication number
- CN201788962U CN201788962U CN2010205107430U CN201020510743U CN201788962U CN 201788962 U CN201788962 U CN 201788962U CN 2010205107430 U CN2010205107430 U CN 2010205107430U CN 201020510743 U CN201020510743 U CN 201020510743U CN 201788962 U CN201788962 U CN 201788962U
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- radiator
- metal
- conductive members
- semiconductor
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Abstract
The utility model relates to a radiating structure of a radiator applied to the field of power electronics or switching power supplies and a device adopting the radiating structure. The radiating structure of the radiator comprises a radiator body, a heat conducting insulating film, a power semiconductor device and a metal heat conduction component, wherein, the heat conducting insulating film is arranged on the radiator body; and the metal heat conduction component is arranged between the heat conducting insulating film and the power semiconductor device. The radiating structure of the radiator is simple; in addition, by adopting the technical scheme of the radiating structure of the radiator and the device adopting the radiating structure, the service life of a single IGBT (insulated-gate bipolar transistor) (or an MOS pipe that is a metal oxide semiconductor pipe) can be prolonged greatly, the temperature rise speed and the temperature of the single IGBT (or the MOS pipe) are reduced, and the reliability is improved at the same time when a power supply operates.
Description
Technical field
The utility model relates to a kind of radiator structure, is specifically related to a kind of radiator structure of the radiator that is applied to power electronics or field of switch power and uses the device of this radiator structure.
Background technology
At present, high power switching power supply (as inverter type welder, ups power, EPS power supply, frequency converter) is for reducing cost, the insulated gate bipolar transistor of selecting for use at semiconductor power device) turning to discrete device single tube IGBT or metal-oxide-semiconductor (Metal oxid semiconductor mos field effect transistor), use only single or many single tube IGBT(or metal-oxide-semiconductor by module package IGBT(Insulated Gate Bipolar Transistor) parallel connection reaches the identical power output of module I GBT.
Adopting single tube IGBT(or metal-oxide-semiconductor), run into two problems: one, semiconductor power device single tube IGBT(or metal-oxide-semiconductor) can not be directly installed on the module radiator, as be designed to polylith radiator and charged, the electric leakage of machine is hidden some dangers for, as inverter type welder; Two, in order to address the above problem one, some producers isolate single tube IGBT(or metal-oxide-semiconductor by heat-conducting insulated film in use) and radiator, reach the purpose of heat radiation with this.
But, there is following defective in prior art: at work, particularly variable load and require to reach single tube IGBT(or metal-oxide-semiconductor as far as possible) peak power output the time, single tube IGBT(or metal-oxide-semiconductor) on temperature rise very fast, and temperature is very high, the temperature height makes single tube IGBT(or metal-oxide-semiconductor) lifetime, and the reliability of power supply reduces.Its basic reason is: one, single tube IGBT(or metal-oxide-semiconductor) area that outwards conducts heat of body is little; Two, single tube IGBT(or metal-oxide-semiconductor) high thermal resistance heat-conducting insulation material is arranged between body and the radiator, making single tube IGBT(or metal-oxide-semiconductor) body is slack-off to the heat transfer of radiator, single tube IGBT(or metal-oxide-semiconductor) body temperature increases rapidly, a higher temperature ability heat balance, at the bigger equipment of some load variations scopes (inverter type welder), at any time produce heat wave in the work and gush, may not reach heat balance, single tube IGBT(or metal-oxide-semiconductor) will damage.
Summary of the invention
In order to solve the technical problem that exists in the prior art, the utility model provides a kind of radiator structure of radiator.
The utility model also provides a kind of device that uses this radiator heat-dissipation structure.
The technical scheme that the prior art problem that solves the utility model is adopted is: a kind of radiator structure of radiator is provided, and the radiator structure of described radiator comprises radiator body, heat conductive insulating member, power semiconductor and metal fever conductive members; Wherein, described heat conductive insulating member is arranged on the described radiator body, and described metal fever conductive members is arranged between described heat conductive insulating member and the described power semiconductor.
According to an optimal technical scheme of the present utility model: described metal fever conductive members in the form of sheets.
According to an optimal technical scheme of the present utility model: the surface area of described metal fever conductive members is greater than described power semiconductor surface area.
According to an optimal technical scheme of the present utility model: at least one described power semiconductor is installed on the described metal fever conductive members.
According to an optimal technical scheme of the present utility model: described power semiconductor discrete device, as: single tube IGBT or metal-oxide-semiconductor.
According to an optimal technical scheme of the present utility model: scribble the silicone grease layer between described radiator body and the described heat conductive insulating member; Scribble the silicone grease layer between described heat conductive insulating member and the described metal fever conductive members; Scribble the silicone grease layer between described metal fever conductive members and the described power semiconductor.
According to an optimal technical scheme of the present utility model: described metal fever conductive members is copper or aluminium.
According to an optimal technical scheme of the present utility model: described heat conductive insulating member is a heat-conducting insulated film.
The utility model also provides a kind of device, on the described device radiator body is installed, described radiator body is provided with heat conductive insulating member, metal fever conductive members and power semiconductor, wherein, described heat conductive insulating member is connected with described radiator body, and described metal fever conductive members is arranged between described heat conductive insulating member and the described power semiconductor.
According to an optimal technical scheme of the present utility model: described device is inverter type welder, ups power (uninterruptible power system uninterrupted power supply), EPS power supply (Emergency Power Supply emergency power supply power) or frequency converter.
The radiator structure of the utility model radiator is simple, can make single tube IGBT(or metal-oxide-semiconductor after adopting technical solutions of the utility model) useful life improve greatly, reducing single tube IGBT(or metal-oxide-semiconductor) in temperature rise speed and the temperature, improved the reliability of power work.
Description of drawings
Fig. 1 is the radiator structure schematic diagram one of the utility model radiator.
Fig. 2 is the radiator structure schematic diagram two of the utility model radiator.
Fig. 3 is the radiator structure heat transfer schematic diagram of the utility model radiator.
Embodiment
Below in conjunction with accompanying drawing technical solutions of the utility model are elaborated.
In order to solve single tube IGBT(or the metal-oxide-semiconductor that exists in the prior art) at work, particularly variable load and require to reach single tube IGBT(or metal-oxide-semiconductor as far as possible) peak power output the time, single tube IGBT(or metal-oxide-semiconductor) on temperature rise very fast, and temperature is very high, the temperature height makes single tube IGBT(or metal-oxide-semiconductor) lifetime, and the reliability of power supply reduces this technical problem, and the utility model provides a kind of radiator structure of new structure.
Power single tube IGBT(or metal-oxide-semiconductor in the technical solution of the utility model) substituted module I GBT, to reduce cost, still shared radiator, and radiator is not charged; When using heat-conducting insulated film and metal fever conductive members to be used, can cushion single tube IGBT(or metal-oxide-semiconductor) heat wave gush, reduce single tube IGBT(or metal-oxide-semiconductor) temperature rise speed (as inversion welding machine) on the body, reduce single tube IGBT(or metal-oxide-semiconductor) temperature on the body; Switching Power Supply is being used single tube IGBT(or metal-oxide-semiconductor) behind alternative module IGBT, prolonged single tube IGBT(or metal-oxide-semiconductor) life-span, improved the reliability of Switching Power Supply work.
The technical solution of the utility model can be consulted Figure of description Fig. 1 and Fig. 2.As shown in FIG., the utility model provides a kind of radiator structure of radiator, and the radiator structure of described radiator comprises radiator body 101, heat conductive insulating member 102, power semiconductor 103 and metal fever conductive members 104; Wherein, described heat conductive insulating member 102 is arranged on the described radiator body 101, and described metal fever conductive members 104 is arranged between described heat conductive insulating member 102 and the described power semiconductor 103.
In optimal technical scheme of the present utility model, described metal fever conductive members 104 in the form of sheets, surface area is greater than the surface area of described power semiconductor 103, described metal fever conductive members 104 is a low thermal resistance, fast copper or aluminium conduct heat.
At least one described power semiconductor 103 is installed on described metal fever conductive members 104, two or four described power semiconductors 103 generally are installed on described metal fever conductive members 104 in the real work.
At the power semiconductor described in the technical solutions of the utility model 103 is single tube IGBT or metal-oxide-semiconductor.
In optimal technical scheme of the present utility model, better in order to make radiating effect, between described radiator body 101 and described heat conductive insulating member 102, scribble the silicone grease layer; Scribble the silicone grease layer between described heat conductive insulating member 102 and the described metal fever conductive members 104; Scribble the silicone grease layer between described metal fever conductive members 104 and the described power semiconductor 103.
In optimal technical scheme of the present utility model, described heat conductive insulating member 102 is a heat-conducting insulated film.
The utility model also provides a kind of device, radiator body 101 is installed on the described device, described radiator body 101 is provided with heat-conducting insulated film, metal fever conductive members 104 and power semiconductor 103, wherein, described heat-conducting insulated film is connected with described radiator body 101, and described metal fever conductive members 104 is arranged between described heat-conducting insulated film and the described power semiconductor 103.
In optimal technical scheme of the present utility model, described device is inverter type welder, ups power (uninterruptible power system uninterrupted power supply), EPS power supply (Emergency Power Supply emergency power supply power) or frequency converter.
See also Fig. 3, the radiator structure heat transfer schematic diagram of the utility model radiator.As can be seen from Fig. 3, described single tube IGBT(or metal-oxide-semiconductor) and described metal fever conductive members 104 between be that high density conducts heat, after described metal fever conductive members 104 bufferings, make that becoming low-density between described metal fever conductive members 104 and the described heat conductive insulating member 102 conducts heat.
In the technical solution of the utility model, single tube IGBT(or metal-oxide-semiconductor) when high-power output, switching loss and conduction loss are arranged and produce temperature rise, not charged for guaranteeing radiator, with single tube IGBT(or metal-oxide-semiconductor) by high thermal resistance heat-conducting insulation material and radiator indirect contact, since high thermal resistance heat-conducting insulation material conduct heat compare metal slowly many, add single tube IGBT(or metal-oxide-semiconductor) body 101 area of dissipations are little, cause single tube IGBT(or metal-oxide-semiconductor when power is exported) on heat can not scatter fast, and cause single tube IGBT(or metal-oxide-semiconductor) on temperature rise too fast, body 101 thermal equilibrium temperature height, make its lifetime, increased the failure rate of Switching Power Supply.
At single tube IGBT(or metal-oxide-semiconductor) and high thermal resistance heat-conducting insulation material between add a metal fever conductive members 104, the area of sheet metal is greater than single tube IGBT(or metal-oxide-semiconductor) area on the body 101, because the heat transfer rate of metal is very fast, single tube IGBT(or metal-oxide-semiconductor) little with the thermal resistance of sheet metal, single tube IGBT(or metal-oxide-semiconductor when power is exported) on heat pass to fast on the metal fever conductive members 104, be transmitted to fast on the whole metal fever conductive members 104 in the part of metal fever conductive members 104, single tube IGBT(or metal-oxide-semiconductor) temperature rise obtain efficient buffer, suppress its rapid warm raising.Because the heat transfer area of metal fever conductive members 104 is big, hot radical is originally passed to radiator uniformly by the wideer area that contacts with high thermal resistance heat-conducting insulation material.
Form half-bridge topology with 8 of IGBT single tubes (U.S. fairchild 60N100) and on inversion manual welding ZX7-400, experimentize, 32 ℃ of ambient temperatures, output 400A/36V, experimental data sees the following form:
| Project | The protection temperature | The burn-in time | Radiator temperature | IGBT |
Conclusion |
| No heat conduction component | 75℃ | 3 minutes | 67℃ | 115℃ | Stop experiment because of IGBT |
| Metal fever |
75℃ | 15 minutes | 72℃ | 95℃ | IGBT |
Can draw to draw a conclusion according to check: metal fever conductive members 104 is relevant with the area of radiator contact by high thermal resistance heat-conducting insulated film, and the big more buffering radiating effect of contact area is good more usually; The thermal conduction effect also thickness of metal fever conductive members 104 is relevant, and metal fever conductive members 104 is thick more, and heat-transfer effect is good more; Relevant with the material of metal fever conductive members 104, daily metal heat-conducting material copper is best, and aluminium secondly.
The radiator structure of the utility model radiator is simple, can make single tube IGBT(or metal-oxide-semiconductor after adopting technical solutions of the utility model) useful life improve greatly, reducing single tube IGBT(or metal-oxide-semiconductor) in temperature rise speed and the temperature, improved the reliability of power work.
Above content be in conjunction with concrete optimal technical scheme to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be considered as belonging to protection range of the present utility model.
Claims (10)
1. the radiator structure of a radiator is characterized in that:
The radiator structure of described radiator comprises radiator body (101), heat conductive insulating member (102), power semiconductor (103) and metal fever conductive members (104);
Wherein, described heat conductive insulating member (102) is arranged on the described radiator body (101), and described metal fever conductive members (104) is arranged between described heat conductive insulating member (102) and the described power semiconductor (103).
2. according to the radiator structure of the described radiator of claim 1, it is characterized in that:
Described metal fever conductive members (104) in the form of sheets.
3. according to the radiator structure of the described radiator of claim 2, it is characterized in that:
The surface area of described metal fever conductive members (104) is greater than described power semiconductor (103) surface area.
4. according to the radiator structure of the described radiator of claim 3, it is characterized in that:
At least one described power semiconductor (103) is installed on the described metal fever conductive members (104).
5. according to the radiator structure of the described radiator of claim 4, it is characterized in that:
Described power semiconductor (103) is the power semiconductor discrete device.
6. according to the radiator structure of the described radiator of claim 5, it is characterized in that:
Scribble the silicone grease layer between described radiator body (101) and the described heat conductive insulating member (102);
Scribble the silicone grease layer between described heat conductive insulating member (102) and the described metal fever conductive members (104);
Scribble the silicone grease layer between described metal fever conductive members (104) and the described power semiconductor (103).
7. according to the radiator structure of the described radiator of claim 6, it is characterized in that:
Described metal fever conductive members (104) is copper or aluminium.
8. according to the radiator structure of the described radiator of claim 6, it is characterized in that:
Described heat conductive insulating member (102) is a heat-conducting insulated film.
9. one kind is equipped with the device of radiator heat-dissipation structure according to claim 1, it is characterized in that: radiator body (101) is installed on the described device, described radiator body (101) is provided with heat conductive insulating member (102), metal fever conductive members (104) and power semiconductor (103), wherein, described heat conductive insulating member (102) is connected with described radiator body (101), and described metal fever conductive members (104) is arranged between described heat conductive insulating member (102) and the described power semiconductor (103).
10. device according to claim 9 is characterized in that: described device is inverter type welder, ups power, EPS power supply or frequency converter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205107430U CN201788962U (en) | 2010-08-31 | 2010-08-31 | Radiating structure of radiator and device adopting radiating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205107430U CN201788962U (en) | 2010-08-31 | 2010-08-31 | Radiating structure of radiator and device adopting radiating structure |
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| Publication Number | Publication Date |
|---|---|
| CN201788962U true CN201788962U (en) | 2011-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010205107430U Expired - Lifetime CN201788962U (en) | 2010-08-31 | 2010-08-31 | Radiating structure of radiator and device adopting radiating structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299144A (en) * | 2011-06-15 | 2011-12-28 | 佛山市顺德区和而泰电子科技有限公司 | Discreet IGBT module and substrate thereof |
| CN103295980A (en) * | 2012-03-05 | 2013-09-11 | 上海沪通企业集团有限公司 | Single tube IGBT encapsulation full-bridge module and encapsulation method thereof |
| CN105472945A (en) * | 2015-12-04 | 2016-04-06 | 新安乃达驱动技术(上海)有限公司 | Electric motor controller, electric motor and electric vehicle |
| CN107538154A (en) * | 2016-06-29 | 2018-01-05 | 上海沪工焊接集团股份有限公司 | IGBT protection devices and IGBT module |
| CN110265367A (en) * | 2019-07-17 | 2019-09-20 | 中天昱品科技有限公司 | A kind of middle power inverter single tube radiator structure |
| CN112310029A (en) * | 2019-07-26 | 2021-02-02 | 株洲中车时代半导体有限公司 | Substrate and substrate integrated power semiconductor device and manufacturing method thereof |
-
2010
- 2010-08-31 CN CN2010205107430U patent/CN201788962U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299144A (en) * | 2011-06-15 | 2011-12-28 | 佛山市顺德区和而泰电子科技有限公司 | Discreet IGBT module and substrate thereof |
| CN103295980A (en) * | 2012-03-05 | 2013-09-11 | 上海沪通企业集团有限公司 | Single tube IGBT encapsulation full-bridge module and encapsulation method thereof |
| CN103295980B (en) * | 2012-03-05 | 2016-01-13 | 上海沪通企业集团有限公司 | Single tube IGBT encapsulates full-bridge modules and method for packing thereof |
| CN105472945A (en) * | 2015-12-04 | 2016-04-06 | 新安乃达驱动技术(上海)有限公司 | Electric motor controller, electric motor and electric vehicle |
| CN107538154A (en) * | 2016-06-29 | 2018-01-05 | 上海沪工焊接集团股份有限公司 | IGBT protection devices and IGBT module |
| CN110265367A (en) * | 2019-07-17 | 2019-09-20 | 中天昱品科技有限公司 | A kind of middle power inverter single tube radiator structure |
| CN112310029A (en) * | 2019-07-26 | 2021-02-02 | 株洲中车时代半导体有限公司 | Substrate and substrate integrated power semiconductor device and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shenzhen Riland Industry Co., Ltd. Assignor: Kunshan Ruiling Welding Technology Co., Ltd. Contract record no.: 2013440020226 Denomination of utility model: Radiating structure of radiator and device adopting radiating structure Granted publication date: 20110406 License type: Exclusive License Record date: 20130724 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110406 |