CN203553133U - Heat radiating structure of radiator and device - Google Patents
Heat radiating structure of radiator and device Download PDFInfo
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- CN203553133U CN203553133U CN201320350727.3U CN201320350727U CN203553133U CN 203553133 U CN203553133 U CN 203553133U CN 201320350727 U CN201320350727 U CN 201320350727U CN 203553133 U CN203553133 U CN 203553133U
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- radiator
- semiconductor
- aluminium base
- power
- single tube
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Abstract
The utility model relates to the technical field of heat radiating, and provides a heat radiating structure of radiator and device. The heat radiating structure of the radiator comprises an aluminium substrate fixed on the radiator, a plurality of power semiconductor devices fixedly insulated on the aluminium substrate, and a PCB plate connected with a pin of a plurality of power semiconductor devices. According to the power semiconductor device of the utility model, the service life of a single tube IGBT (or an MOS tube) is substantially raised, the temperature rise speed and temperature of the single tube IGBT (or the MOS tube) are reduced, and simultaneously, the work reliability of the power supply is raised.
Description
[technical field]
The utility model relates to heat dissipation technology field, particularly a kind of radiator structure and device that is applied to the radiator of power electronics or field of switch power.
[background technology]
At present, high power switching power supply (as inverter type welder, ups power, EPS power supply, frequency converter) is for reducing costs, the insulated gate bipolar transistor by module package IGBT(Insulated Gate Bipolar Transistor of selecting at semiconductor power device) turning to discrete device single tube IGBT or metal-oxide-semiconductor (Metal oxid semiconductor mos field effect transistor), use only single or many single tube IGBT(or metal-oxide-semiconductor) parallel connection reaches the power output that module I GBT is identical; Another kind is homemade single tube IGBT(or metal-oxide-semiconductor) module, this class formation is all to adopt many little electric current single tube IGBT(or metal-oxide-semiconductor at present) parallel connection, thus obtain the IGBT module of High-current output; By pcb board fixedly single tube IGBT(or metal-oxide-semiconductor) position, fixedly single tube IGBT(or metal-oxide-semiconductor) thus reach the effect of fixing whole module.
Adopting single tube IGBT(or metal-oxide-semiconductor), run into two problems: one, semiconductor power device single tube IGBT(or metal-oxide-semiconductor) can not be directly installed on a module radiator, as be designed to polylith radiator and charged, the electric leakage of machine is hidden some dangers for, as inverter type welder; Two,, in order to address the above problem one, some producers in use, isolate single tube IGBT(or metal-oxide-semiconductor by heat-conducting insulated film) and radiator, with this, reach the object of heat radiation.
But, there is following defect in prior art: at work, particularly variable load and require to reach as far as possible single tube IGBT(or metal-oxide-semiconductor) peak power output time, single tube IGBT(or metal-oxide-semiconductor) on temperature rise very fast, and temperature is very high, high single tube IGBT(or the metal-oxide-semiconductor of making of temperature) lifetime, and the reliability of power supply reduces.Its basic reason is: one, single tube IGBT(or metal-oxide-semiconductor) area that outwards conducts heat of body is little; Two, single tube IGBT(or metal-oxide-semiconductor) there is high thermal resistance heat-conducting insulation material between body and radiator, making single tube IGBT(or metal-oxide-semiconductor) body is slack-off to the heat transfer of radiator, single tube IGBT(or metal-oxide-semiconductor) body temperature increases rapidly, a higher temperature ability heat balance, at the larger equipment of some load variations scopes (inverter type welder), in work, produce at any time heat wave and gush, may not reach heat balance, single tube IGBT(or metal-oxide-semiconductor) will damage.
[utility model content]
In order to overcome prior art, there is single tube IGBT(or metal-oxide-semiconductor) temperature is high, the life-span is short and reliability is low technical problem, the utility model the first object is to provide a kind of radiator structure of radiator.
The second object of the present utility model is to provide the device that a kind of radiator structure according to above-mentioned radiator forms.
In order to realize above-mentioned the first object, the technical scheme that the utility model adopts is:
A radiator structure for radiator, it comprises radiator body, is fixed on the aluminium base on described radiator body, and a plurality of power semiconductors on described aluminium base and the pcb board being connected with the pin of a plurality of power semiconductors are fixed in insulation.
According to a preferred embodiment of the present utility model: described power semiconductor is even number, and two two 1 groups of insulation of this even number power semiconductor are fixed on described aluminium base.
According to a preferred embodiment of the present utility model: in the form of sheets, and this aluminium base is aluminium or copper to described aluminium base.
According to a preferred embodiment of the present utility model: scribble silicone grease layer between described radiator body and aluminium base.
According to a preferred embodiment of the present utility model: described power semiconductor is single tube IGBT or metal-oxide-semiconductor.
According to a preferred embodiment of the present utility model: described aluminium base is fixed on radiator body by screw.
In order to realize above-mentioned the second object, the technical scheme that the utility model adopts is:
According to a device for the radiator structure of above-mentioned radiator and installation composition, it comprises device body, and the radiator structure of described radiator is installed on this device body.
According to a preferred embodiment of the present utility model: described device body is inverter type welder, ups power, EPS power supply or frequency converter.
In prior art, the beneficial effects of the utility model are: can make power semiconductor, be single tube IGBT(or metal-oxide-semiconductor) useful life greatly improve, reducing single tube IGBT(or metal-oxide-semiconductor) in temperature rise speed and temperature, improved the reliability of power work.
[accompanying drawing explanation]
Fig. 1. the radiator structure schematic diagram one of the utility model radiator;
Fig. 2. the radiator structure schematic diagram two of the utility model radiator;
Description of reference numerals: 101, radiator body, 102, power semiconductor, 103, pcb board, 104, aluminium base.
[embodiment]
Below in conjunction with drawings and embodiments, the utility model is described in further detail.
In order to solve single tube IGBT(or the metal-oxide-semiconductor existing in prior art) at work, particularly variable load and require to reach as far as possible single tube IGBT(or metal-oxide-semiconductor) peak power output time, single tube IGBT(or metal-oxide-semiconductor) on temperature rise very fast, and temperature is very high, high single tube IGBT(or the metal-oxide-semiconductor of making of temperature) lifetime, and the reliability of power supply reduces this technical problem, the utility model provides a kind of radiator structure and device of radiator of new structure.
Embodiment mono-
Consult shown in Fig. 1, Fig. 2, the present embodiment provides a kind of radiator structure of radiator, it comprises radiator body 101, is fixed on the aluminium base 104 on radiator body 101, a plurality of power semiconductors 102 on aluminium base 104 and the pcb board 103 being connected with the pin of a plurality of power semiconductors 102 are fixed in insulation.
Preferably, above-mentioned power semiconductor 102 is even number, and 102 two two 1 groups of insulation of this even number power semiconductor are fixed on aluminium base 104, is generally that the radiating surface of power semiconductor 102 is arranged on aluminium base 104.And aluminium base 104 is generally in the form of sheets, and this aluminium base 104 for low thermal resistance, fast aluminium or copper conduct heat.And aluminium base 104 is generally fixed on radiator body 101 by screw.
Meanwhile, in order to make radiating effect better, between radiator body 101 and aluminium base 104, scribble silicone grease layer.And above-mentioned power semiconductor 102 is power semiconductor discrete device, is single tube IGBT or metal-oxide-semiconductor.
In the technical solution of the utility model, adopt a plurality of power semiconductors 102, i.e. power single tube IGBT(or metal-oxide-semiconductor) substituted module I GBT, to reduce costs, it still shares radiator body 101, and radiator is not charged; When using aluminium base 104, can cushion single tube IGBT(or metal-oxide-semiconductor) heat wave gush, reduce single tube IGBT(or metal-oxide-semiconductor) temperature rise speed (as inversion welding machine) on body, reduce single tube IGBT(or metal-oxide-semiconductor) temperature on body; When Switching Power Supply is being used single tube IGBT(or metal-oxide-semiconductor) after alternative module IGBT, extended single tube IGBT(or metal-oxide-semiconductor) life-span, improved the reliability of Switching Power Supply work.
Embodiment bis-
The present embodiment provides that a kind of it comprises device body according to the device of the radiator structure of above-mentioned radiator and installation composition, and the radiator structure of radiator is installed on this device body.
Wherein, the radiator structure of the radiator structure of the radiator in the present embodiment radiator a kind of with embodiment is identical.And above-mentioned device body is inverter type welder, ups power (uninterruptible power system uninterrupted power supply), EPS power supply (Emergency Power Supply emergency power supply power) or frequency converter etc.
Like this, the apparatus structure of the present embodiment is simple, easy for installation, and adopts after the technical scheme of embodiment, and the radiating effect of device is better, has improved useful life.
Foregoing detailed description is only exemplary description, and those skilled in the art in the situation that do not depart from the scope and spirit that the utility model is protected, can design various execution modes according to different actual needs.
Claims (8)
1. the radiator structure of a radiator, it is characterized in that: comprise radiator body (101), be fixed on the aluminium base (104) on described radiator body (101), a plurality of power semiconductors (102) on described aluminium base (104) and the pcb board (103) being connected with the pin of a plurality of power semiconductors (102) are fixed in insulation.
2. the radiator structure of radiator according to claim 1, is characterized in that: described power semiconductor (102) is even number, and two two 1 groups of insulation of this even number power semiconductor (102) are fixed on described aluminium base (104).
3. the radiator structure of radiator according to claim 1, is characterized in that: in the form of sheets, and this aluminium base (104) is aluminium to described aluminium base (104).
4. the radiator structure of radiator according to claim 1, is characterized in that: between described radiator body (101) and aluminium base (104), scribble silicone grease layer.
5. the radiator structure of radiator according to claim 1, is characterized in that: described power semiconductor (102) is single tube IGBT or metal-oxide-semiconductor.
6. the radiator structure of radiator according to claim 1, is characterized in that: described aluminium base (104) is fixed on radiator body (101) by screw.
7. the device forming according to the radiator structure of the radiator described in claim 1-6 any one, is characterized in that: comprise device body, and the radiator structure of described radiator is installed on this device body.
8. device according to claim 7, is characterized in that: described device body is inverter type welder, ups power, EPS power supply or frequency converter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320350727.3U CN203553133U (en) | 2013-06-19 | 2013-06-19 | Heat radiating structure of radiator and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320350727.3U CN203553133U (en) | 2013-06-19 | 2013-06-19 | Heat radiating structure of radiator and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203553133U true CN203553133U (en) | 2014-04-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320350727.3U Expired - Fee Related CN203553133U (en) | 2013-06-19 | 2013-06-19 | Heat radiating structure of radiator and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203553133U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109890138A (en) * | 2018-12-26 | 2019-06-14 | 锦霸工贸有限公司 | A kind of circuit board with IGBT power tube |
| CN111787683A (en) * | 2020-06-30 | 2020-10-16 | 深圳市麦格米特焊接技术有限公司 | Main power board encapsulation integral structure and electric welding |
-
2013
- 2013-06-19 CN CN201320350727.3U patent/CN203553133U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109890138A (en) * | 2018-12-26 | 2019-06-14 | 锦霸工贸有限公司 | A kind of circuit board with IGBT power tube |
| CN109890138B (en) * | 2018-12-26 | 2024-04-09 | 锦霸科技股份有限公司 | Circuit board with IGBT power tube |
| CN111787683A (en) * | 2020-06-30 | 2020-10-16 | 深圳市麦格米特焊接技术有限公司 | Main power board encapsulation integral structure and electric welding |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140416 |