CN219287458U - Photovoltaic quick shutoff ware and photovoltaic terminal box - Google Patents

Abstract

The utility model discloses a photovoltaic quick shutoff device and a photovoltaic junction box, wherein the photovoltaic quick shutoff device comprises: a printed circuit board, a component diode, a metal oxide semiconductor field effect transistor and a heat sink; the assembly diode and the metal oxide semiconductor field effect transistor are positioned on the printed circuit board, and radiating fins are arranged on one sides of the assembly diode and the metal oxide semiconductor field effect transistor, which are far away from the printed circuit board, and cover the surfaces of the assembly diode and the metal oxide semiconductor field effect transistor. The utility model can effectively reduce the working temperature of the component diode and the metal oxide semiconductor field effect transistor, and has simple structure and lower cost.

Description

Photovoltaic quick shutoff ware and photovoltaic terminal box

Technical Field

The utility model relates to the technical field of photovoltaics, in particular to a photovoltaic quick shutoff device and a photovoltaic junction box.

Background

The photovoltaic quick shutoff is arranged in the photovoltaic junction box and is controlled by a negative electrode or a positive electrode. The component diode, the metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor Field Effect Transistor, MOSFET, also called MOS transistor) and the sub-cascade diode on the printed circuit board of the shutoff are all high-heating power devices, and the working conditions of the three power devices are as follows: when the photovoltaic quick shutoff device is normally conducted, the photovoltaic quick shutoff device works: the MOS tube is in a working state, and the sub-cascade diode and the component diode do not work; when the photovoltaic rapid shutoff device is normally conducted and works and a battery plate part with the sub-cascade diodes connected in parallel generates hot spots, the battery plate part is connected in parallel with the sub-cascade diodes: the MOS tube and the sub-cascade diode are in a working state, and the component diode does not work; the photovoltaic quick shutoff device is abnormally turned off, and when other shutoff devices in the whole series power generation loop work normally: the component diode is in an operating state, and the MOS tube and the sub-cascade diode do not operate.

However, as the sub-cascade diodes are directly electrically connected with the busbar prefabricated in the photovoltaic cell panel, when the sub-cascade diodes work, effective heat dissipation can be carried out through the busbar in the photovoltaic cell panel. And the MOS tube and the component diode have no effective natural heat dissipation channel.

Disclosure of Invention

The utility model provides a photovoltaic quick shutoff device and a photovoltaic junction box, which are used for reducing the working temperature of a component diode and a metal oxide semiconductor field effect transistor, and have the advantages of simple structure and lower cost.

According to an aspect of the present utility model, there is provided a photovoltaic quick-turn-off device comprising:

a printed circuit board, a diode, a metal oxide semiconductor field effect transistor and a heat sink;

the assembly diode and the metal oxide semiconductor field effect transistor are positioned on the printed circuit board, and radiating fins are arranged on one sides of the assembly diode and the metal oxide semiconductor field effect transistor, which are far away from the printed circuit board, and cover the surfaces of the assembly diode and the metal oxide semiconductor field effect transistor.

Optionally, the heat sink includes a first region, a second region, and a third region, and the third region is used for connecting the first region and the second region; the device comprises a component diode, a metal oxide semiconductor field effect transistor, a first area, a second area and a first electrode, wherein the component diode and the metal oxide semiconductor field effect transistor are different in height, the first area covers the surface of the component diode, and the second area covers the surface of the metal oxide semiconductor field effect transistor; the third region is stepped.

Optionally, the first region and the second region are sequentially arranged along the first direction, the third region is an L-shaped structure, the L-shaped structure includes a first sub-region and a second sub-region which are connected with each other, the first sub-region is located between the first region and the second region, the second sub-region is located at one side of the second region along the second direction, the first sub-region is connected with the first region, the second sub-region is connected with the second region, and the second sub-region is in a step shape.

Optionally, the photovoltaic quick shutoff further comprises: the special adhesive layer is arranged between the radiating fin and the component diode and between the radiating fin and the metal oxide semiconductor field effect transistor.

Optionally, the photovoltaic quick shutoff further comprises: and the sealing heat conducting adhesive layer covers the radiating fin and the area of the printed circuit board where the component diode and the metal oxide semiconductor field effect transistor are not arranged.

Optionally, the heat sink further comprises: and the through holes penetrate through the radiating fins.

Optionally, the photovoltaic quick shutoff further comprises:

the sub-cascade diode is positioned on the printed circuit board, and the sealing heat conducting glue layer covers the sub-cascade diode.

Optionally, the material of the heat sink includes any one of copper, iron, and aluminum.

According to another aspect of the utility model, a photovoltaic junction box is provided, comprising the photovoltaic quick-turn-off device according to any embodiment of the utility model.

The photovoltaic quick shutoff device provided by the technical scheme of the embodiment of the utility model comprises: a printed circuit board, a component diode, a metal oxide semiconductor field effect transistor and a heat sink; the assembly diode and the metal oxide semiconductor field effect transistor are positioned on the printed circuit board, and radiating fins are arranged on one sides of the assembly diode and the metal oxide semiconductor field effect transistor, which are far away from the printed circuit board, and cover the surfaces of the assembly diode and the metal oxide semiconductor field effect transistor. In the embodiment of the utility model, the component diode and the metal oxide semiconductor field effect tube share one radiating fin, and the radiating fin can absorb heat generated by the component diode and the metal oxide semiconductor field effect tube and release the heat into the air for radiating when the component diode and the metal oxide semiconductor field effect tube work normally, so that the working temperature of the component diode and the metal oxide semiconductor field effect tube is reduced, and the device has a simple structure and lower cost.

It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the utility model or to delineate the scope of the utility model. Other features of the present utility model will become apparent from the description that follows.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a top view of a photovoltaic quick shutoff structure according to an embodiment of the present utility model;

fig. 2 is a structural front view of a photovoltaic quick shutoff provided by an embodiment of the present utility model;

fig. 3 is a right side view of a structure of a photovoltaic quick shutoff according to an embodiment of the present utility model;

FIG. 4 is a structural elevation view of yet another photovoltaic quick shutoff provided by an embodiment of the present utility model;

FIG. 5 is a top view of a further photovoltaic quick shutoff provided by an embodiment of the present utility model;

fig. 6 is a schematic structural diagram of a photovoltaic junction box according to an embodiment of the present utility model.

Detailed Description

In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

An embodiment of the present utility model provides a photovoltaic quick-turn-off device, fig. 1 is a structural top view of the photovoltaic quick-turn-off device provided by the embodiment of the present utility model, fig. 2 is a structural front view of another photovoltaic quick-turn-off device provided by the embodiment of the present utility model, and referring to fig. 1 and 2, the photovoltaic quick-turn-off device includes: a printed circuit board 10, a component diode 20, a mosfet 30, and a heat sink 40; the component diode 20 and the metal oxide semiconductor field effect transistor 30 are positioned on the printed circuit board 10, and a heat sink 40 is arranged on one side of the component diode 20 and the metal oxide semiconductor field effect transistor 30 away from the printed circuit board 10, and the heat sink 40 covers the surfaces of the component diode 20 and the metal oxide semiconductor field effect transistor 30.

The component diode 20 and the mosfet 30 may be mounted on the pcb 10, and the heat sink 40 may be adhered to the component diode 20 and the mosfet 30. When the component diode 20 and the mosfet 30 work normally, the heat sink 40 can absorb the heat generated by the component diode 20 and the mosfet 30 and release the heat to the air for heat dissipation, so that the temperature of the component diode 20 and the mosfet 30 can be effectively reduced by the heat sink 40. Compared with the prior art that a plurality of metal oxide semiconductor field effect transistors 30 are adopted to reduce the temperature of the metal oxide semiconductor field effect transistors 30, the assembly diode 20 and the metal oxide semiconductor field effect transistors 30 share one radiating fin 40, so that the structure is simple, and meanwhile, the cost is reduced.

The photovoltaic quick shutoff device provided by the technical scheme of the embodiment of the utility model comprises: a printed circuit board 10, a component diode 20, a mosfet 30, and a heat sink 40; the component diode 20 and the metal oxide semiconductor field effect transistor 30 are positioned on the printed circuit board 10, and a heat sink 40 is arranged on one side of the component diode 20 and the metal oxide semiconductor field effect transistor 30 away from the printed circuit board 10, and the heat sink 40 covers the surfaces of the component diode 20 and the metal oxide semiconductor field effect transistor 30. In the embodiment of the utility model, the component diode 20 and the metal oxide semiconductor field effect transistor 30 share one cooling fin 40, and the cooling fin 40 can absorb heat generated by the component diode 20 and the metal oxide semiconductor field effect transistor 30 and release the heat into the air for cooling when the component diode 20 and the metal oxide semiconductor field effect transistor 30 work normally, so that the working temperature of the component diode 20 and the metal oxide semiconductor field effect transistor 30 is reduced, and the structure is simple, and the cost is lower.

Optionally, with continued reference to fig. 1 and 2, the heat sink 40 includes a first region 41, a second region 42, and a third region 43, the third region 43 being for connecting the first region 41 and the second region 42; wherein, the heights of the component diode 20 and the metal oxide semiconductor field effect transistor 30 are different, the first area 41 covers the surface of the component diode 20, and the second area 42 covers the surface of the metal oxide semiconductor field effect transistor 30; the third region 43 is stepped.

The heights of the component diode 20 and the mosfet 30 are different, and the third region 43 of the heat sink 40 is stepped, so that the heat sink 40 can cover the surfaces of the component diode 20 and the mosfet 30 at the same time, the heat sink 40 can be fully utilized in space, the area of the heat sink 40 is increased, and the operating temperature of the component diode 20 and the mosfet 30 can be effectively reduced.

Optionally, fig. 3 is a right side view of a structure of a photovoltaic rapid shutoff according to an embodiment of the present utility model, referring to fig. 1 to fig. 3, a first region 41 and a second region 42 are sequentially arranged along a first direction x, a third region 43 is an L-shaped structure, the L-shaped structure includes a first sub-region 431 and a second sub-region 432 that are connected to each other, the first sub-region 431 is located between the first region 41 and the second region 42, the second sub-region 432 is located on one side of the second region 42 along a second direction y, the first sub-region 431 is connected to the second region 42, the second sub-region 432 is connected to the second region 42, and the second sub-region 432 is stepped.

In fig. 3, only the second sub-area 432 of the printed circuit board 10, the mosfet 30 and the third area 43 is exemplarily shown, and the second sub-area 432 is provided with a step shape, so that the heat sink 40 can be fully utilized in space, the area of the heat sink 40 is increased, and the operating temperature of the component diode 20 and the mosfet 30 can be effectively reduced.

Optionally, fig. 4 is a structural front view of a further photovoltaic quick-turn-off apparatus provided in an embodiment of the present utility model, and referring to fig. 4, the photovoltaic quick-turn-off apparatus further includes: the special adhesive layer 60, the special adhesive layer 60 is disposed between the heat sink 40 and the component diode 20, and between the heat sink 40 and the mosfet 30.

The heat sink 40 may be adhered to the component diode 20 and the mosfet 30 by a special adhesive layer 60, so as to fix the heat sink 40.

Optionally, referring to fig. 4, the photovoltaic quick shutoff further includes: the sealing heat conductive adhesive layer 70, the sealing heat conductive adhesive layer 70 covers the heat sink 40 and the area of the printed circuit board 10 where the component diode 20 and the mosfet 30 are not disposed.

The sealing heat conducting glue layer 70 may be formed in a glue filling manner, so that the heat of the component diode 20 and the metal oxide semiconductor field effect transistor 30 absorbed by the heat sink 40 is released into the sealing heat conducting glue layer 70 for heat dissipation, and meanwhile, the sealing heat conducting glue layer 70 may also have good sealing performance.

Optionally, fig. 5 is a top view of a structure of another photovoltaic quick-turn-off device according to an embodiment of the present utility model, and referring to fig. 5, the heat sink 40 further includes: through holes 46, the through holes 46 penetrate the heat sink 40.

Wherein, referring to fig. 5, the through holes 46 may include a plurality of through holes 44 and a second through hole 45, the first through hole 44 may be located in the third area 43, the second through hole 45 may be located in the first area 41 between the two component diodes 20, and the glue may be filled through the first through hole 44 and the second through hole 45 to form a sealing heat conducting glue layer, and the sealing heat conducting glue layer may enable the two component diodes 20 and the metal oxide semiconductor field effect transistors 30 to be bonded and sealed, and may enable the heat of the component diodes 20 and the metal oxide semiconductor field effect transistors 30 absorbed by the heat sink 40 to be released into the sealing heat conducting glue layer 70 to dissipate heat.

Optionally, referring to fig. 5, the photovoltaic quick shutoff further includes: the sub-string diode 50, the sub-string diode 50 is located on the printed circuit board 10, and the sealing heat conductive adhesive layer 70 covers the sub-string diode 50.

The sub-string diode 50 is mounted on the printed circuit board 10, and when one component diode 20 fails, the sub-string diode 50 enables the current of other normal component diodes 20 to pass through the path formed by the sub-string diode 50, so as to ensure that the other normal component diodes 20 can work normally.

Optionally, the material of the heat sink includes any one of copper, iron, and aluminum.

Wherein, the cost of copper, iron and aluminum is lower, and the preparation process is mature.

The embodiment of the utility model also provides a photovoltaic junction box based on the embodiment, which comprises the photovoltaic rapid shutoff device according to any embodiment of the utility model.

Fig. 6 is a schematic structural diagram of a photovoltaic junction box according to an embodiment of the present utility model, and referring to fig. 6, the photovoltaic junction box includes a positive electrode shutdown box 01, a middle-stage junction box 02 and a negative electrode junction box 03, where the positive electrode shutdown box 01 in fig. 6 includes the photovoltaic quick shutdown device according to any embodiment of the present utility model, and fig. 6 is only one example, and the photovoltaic quick shutdown device according to any embodiment of the present utility model may also be disposed in the negative electrode junction box 03. The photovoltaic junction box provided by the embodiment of the utility model has the beneficial effects identical to those of the photovoltaic quick shutoff device provided by any embodiment of the utility model.

It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present utility model may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present utility model are achieved, and the present utility model is not limited herein.

The above embodiments do not limit the scope of the present utility model. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included in the scope of the present utility model.

Claims (9)

1. A photovoltaic quick shutoff, comprising:

a printed circuit board, a component diode, a metal oxide semiconductor field effect transistor and a heat sink;

the assembly diode and the metal oxide semiconductor field effect transistor are located on the printed circuit board, the radiating fin is arranged on one side, far away from the printed circuit board, of the assembly diode and the metal oxide semiconductor field effect transistor, and the radiating fin covers the surfaces of the assembly diode and the metal oxide semiconductor field effect transistor.

2. The photovoltaic quick shut down according to claim 1, wherein the heat sink comprises a first region, a second region, and a third region, the third region for connecting the first region and the second region; the first area covers the surface of the component diode, and the second area covers the surface of the metal oxide semiconductor field effect transistor; the third region is stepped.

3. The photovoltaic quick shutoff of claim 2, wherein,

the first area and the second area are sequentially arranged along a first direction, the third area is of an L-shaped structure, the L-shaped structure comprises a first sub-area and a second sub-area which are connected with each other, the first sub-area is located between the first area and the second area, the second sub-area is located on one side of the second area along a second direction, the first sub-area is connected with the first area, the second sub-area is connected with the second area, and the second sub-area is of a step shape.

4. The photovoltaic quick shutoff of claim 2, further comprising: the special adhesive layer is arranged between the radiating fin and the component diode and between the radiating fin and the metal oxide semiconductor field effect transistor.

5. The photovoltaic quick shutoff of claim 2, further comprising:

and the sealing heat conduction glue layer covers the radiating fin and the area of the printed circuit board where the component diode and the metal oxide semiconductor field effect tube are not arranged.

6. The photovoltaic quick shutoff of claim 5, wherein the heat sink further comprises: and the through holes penetrate through the radiating fins.

7. The photovoltaic quick shutoff of claim 5, further comprising:

the sub-cascade diode is positioned on the printed circuit board, and the sealing heat conducting glue layer covers the sub-cascade diode.

8. The photovoltaic quick shutoff of claim 1, wherein the material of the heat sink comprises any of copper, iron, and aluminum.

9. A photovoltaic junction box comprising a photovoltaic quick-disconnect according to any one of claims 1 to 8.

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