CN110010187B - 半导体存储器装置及其操作方法 - Google Patents
半导体存储器装置及其操作方法 Download PDFInfo
- Publication number
- CN110010187B CN110010187B CN201811409219.1A CN201811409219A CN110010187B CN 110010187 B CN110010187 B CN 110010187B CN 201811409219 A CN201811409219 A CN 201811409219A CN 110010187 B CN110010187 B CN 110010187B
- Authority
- CN
- China
- Prior art keywords
- normal
- address
- memory device
- semiconductor memory
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0158829 | 2017-11-24 | ||
| KR1020170158829A KR20190060527A (ko) | 2017-11-24 | 2017-11-24 | 반도체 메모리 장치 및 그 동작 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110010187A CN110010187A (zh) | 2019-07-12 |
| CN110010187B true CN110010187B (zh) | 2024-09-17 |
Family
ID=66442375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811409219.1A Active CN110010187B (zh) | 2017-11-24 | 2018-11-23 | 半导体存储器装置及其操作方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10692582B2 (https=) |
| JP (1) | JP7271139B2 (https=) |
| KR (1) | KR20190060527A (https=) |
| CN (1) | CN110010187B (https=) |
| DE (1) | DE102018122491A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3095547B1 (fr) * | 2019-04-26 | 2024-07-19 | St Microelectronics Rousset | Bus de données de mémoire non-volatile |
| US11164650B2 (en) | 2019-08-30 | 2021-11-02 | International Business Machines Corporation | Scrub management in storage class memory |
| US10997084B2 (en) * | 2019-08-30 | 2021-05-04 | International Business Machines Corporation | Virtual to physical translation and media repair in storage class memory |
| KR102697631B1 (ko) * | 2019-10-28 | 2024-08-23 | 삼성전자주식회사 | 리페어 단위를 가변하는 메모리 장치 및 그것의 리페어 방법 |
| CN114830241A (zh) * | 2019-12-31 | 2022-07-29 | 华为技术有限公司 | 一种存储器的失效修复方法及装置 |
| US11797371B2 (en) | 2020-08-18 | 2023-10-24 | Changxin Memory Technologies, Inc. | Method and device for determining fail bit repair scheme |
| EP3985675B1 (en) | 2020-08-18 | 2024-01-31 | Changxin Memory Technologies, Inc. | Method and device for repairing fail bits |
| US11887685B2 (en) | 2020-08-18 | 2024-01-30 | Changxin Memory Technologies, Inc. | Fail Bit repair method and device |
| US11791010B2 (en) | 2020-08-18 | 2023-10-17 | Changxin Memory Technologies, Inc. | Method and device for fail bit repairing |
| EP3992972B1 (en) | 2020-09-01 | 2024-09-04 | Changxin Memory Technologies, Inc. | Method and apparatus for determining failed bit repair scheme, and chip |
| CN112667445B (zh) * | 2021-01-12 | 2022-05-03 | 长鑫存储技术有限公司 | 封装后的内存修复方法及装置、存储介质、电子设备 |
| KR102870571B1 (ko) * | 2021-03-24 | 2025-10-13 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 리던던트 뱅크를 사용하여 결함 있는 메인 뱅크를 복구하기 위한 메모리 디바이스 |
| US11984179B2 (en) | 2021-03-26 | 2024-05-14 | Changxin Memory Technologies, Inc. | Redundant circuit assigning method and device, and medium |
| CN112908403B (zh) * | 2021-03-31 | 2022-05-17 | 长鑫存储技术有限公司 | 备用电路分派方法、装置、设备及介质 |
| US11791012B2 (en) | 2021-03-31 | 2023-10-17 | Changxin Memory Technologies, Inc. | Standby circuit dispatch method, apparatus, device and medium |
| US11881278B2 (en) | 2021-03-31 | 2024-01-23 | Changxin Memory Technologies, Inc. | Redundant circuit assigning method and device, apparatus and medium |
| EP4307306B1 (en) * | 2021-04-30 | 2026-03-18 | Huawei Technologies Co., Ltd. | Access method for storage unit, repair method, die and storage chip |
| CN113539347B (zh) | 2021-07-21 | 2023-08-18 | 长鑫存储技术有限公司 | 存储器修补线路确定方法及装置、存储介质及电子设备 |
| CN116343883B (zh) * | 2021-12-22 | 2025-11-21 | 浙江驰拓科技有限公司 | 一种存储器及存储器修复方法 |
| US11989417B1 (en) | 2022-10-31 | 2024-05-21 | Nxp Usa, Inc. | Column repair in a memory system using a repair cache |
| CN118212966A (zh) * | 2022-12-08 | 2024-06-18 | 长鑫存储技术有限公司 | 一种信号传输电路及其方法、存储器和电子设备 |
| CN115881202B (zh) * | 2023-02-09 | 2023-05-12 | 长鑫存储技术有限公司 | 一种修复电路及方法、存储器和电子设备 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8900026A (nl) * | 1989-01-06 | 1990-08-01 | Philips Nv | Matrixgeheugen, bevattende standaardblokken, standaardsubblokken, een redundant blok, en redundante subblokken, alsmede geintegreerde schakeling bevattende meerdere van zulke matrixgeheugens. |
| JP2536333B2 (ja) * | 1991-07-24 | 1996-09-18 | 富士通株式会社 | 半導体記憶装置 |
| EP0802541B1 (en) | 1996-04-18 | 2003-03-12 | STMicroelectronics S.r.l. | Method for detecting redundant defective addresses in a memory device with redundancy |
| KR19990015310A (ko) | 1997-08-05 | 1999-03-05 | 윤종용 | 서로 다른 메모리블락들에 공유되는 퓨즈박스를 갖는 반도체 메모리장치 |
| US5999463A (en) | 1997-07-21 | 1999-12-07 | Samsung Electronics Co., Ltd. | Redundancy fuse box and semiconductor device including column redundancy fuse box shared by a plurality of memory blocks |
| KR100345679B1 (ko) | 1999-12-24 | 2002-07-27 | 주식회사 하이닉스반도체 | 메인 워드라인 대치방식의 로우 리페어를 갖는 반도체메모리 장치 |
| US6480429B2 (en) | 2001-02-12 | 2002-11-12 | Micron Technology, Inc. | Shared redundancy for memory having column addressing |
| KR100526882B1 (ko) | 2003-07-10 | 2005-11-09 | 삼성전자주식회사 | 멀티 블록 구조를 갖는 반도체 메모리 장치에서의리던던시 회로 |
| CN1823392A (zh) * | 2003-07-15 | 2006-08-23 | 尔必达存储器株式会社 | 半导体存储器件 |
| KR20050037144A (ko) | 2003-10-17 | 2005-04-21 | 주식회사 하이닉스반도체 | 메모리 장치의 컬럼 리페어 회로 |
| US7006393B2 (en) | 2004-06-07 | 2006-02-28 | Micron Technology, Inc. | Method and apparatus for semiconductor device repair with reduced number of programmable elements |
| US7630258B2 (en) * | 2004-09-30 | 2009-12-08 | Texas Instruments Incorporated | Decoder based set associative repair cache systems and methods |
| KR20080006113A (ko) | 2006-07-11 | 2008-01-16 | 삼성전자주식회사 | 노멀 섹션 워드 라인 단위로 결함 셀을 리페어 할 수 있는 리페어 장치 및 방법 |
| KR101226685B1 (ko) | 2007-11-08 | 2013-01-25 | 삼성전자주식회사 | 수직형 반도체 소자 및 그 제조 방법. |
| US8144534B2 (en) | 2009-08-25 | 2012-03-27 | Micron Technology, Inc. | Methods and memory devices for repairing memory cells |
| KR101691092B1 (ko) | 2010-08-26 | 2016-12-30 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
| US8553466B2 (en) | 2010-03-04 | 2013-10-08 | Samsung Electronics Co., Ltd. | Non-volatile memory device, erasing method thereof, and memory system including the same |
| US9536970B2 (en) | 2010-03-26 | 2017-01-03 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory devices and methods of fabricating the same |
| KR101124320B1 (ko) | 2010-03-31 | 2012-03-27 | 주식회사 하이닉스반도체 | 리던던시 회로 |
| KR101682666B1 (ko) | 2010-08-11 | 2016-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 채널 부스팅 방법, 그것의 프로그램 방법 및 그것을 포함하는 메모리 시스템 |
| JP2012252757A (ja) * | 2011-06-06 | 2012-12-20 | Elpida Memory Inc | 半導体装置 |
| KR102144107B1 (ko) | 2012-11-21 | 2020-08-12 | 삼성전자주식회사 | 리페어 제어 회로 및 이를 포함하는 반도체 메모리 장치 |
| US9007856B2 (en) | 2012-11-21 | 2015-04-14 | Samsung Electronics Co., Ltd. | Repair control circuit and semiconductor memory device including the same |
| KR20160105599A (ko) | 2015-02-27 | 2016-09-07 | 에스케이하이닉스 주식회사 | 메모리 장치 |
| US10490296B2 (en) * | 2016-02-09 | 2019-11-26 | Globalfoundries U.S. Inc. | Memory built-in self-test (MBIST) test time reduction |
| US10636511B2 (en) * | 2017-07-27 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Limited | Memory repair scheme |
| US10522235B2 (en) * | 2017-08-25 | 2019-12-31 | Micron Technology, Inc. | Repair fuse latches using static random access memory array |
-
2017
- 2017-11-24 KR KR1020170158829A patent/KR20190060527A/ko not_active Withdrawn
-
2018
- 2018-09-13 US US16/130,544 patent/US10692582B2/en active Active
- 2018-09-14 DE DE102018122491.5A patent/DE102018122491A1/de active Pending
- 2018-11-20 JP JP2018217444A patent/JP7271139B2/ja active Active
- 2018-11-23 CN CN201811409219.1A patent/CN110010187B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20190164621A1 (en) | 2019-05-30 |
| CN110010187A (zh) | 2019-07-12 |
| JP7271139B2 (ja) | 2023-05-11 |
| US10692582B2 (en) | 2020-06-23 |
| JP2019096376A (ja) | 2019-06-20 |
| DE102018122491A1 (de) | 2019-05-29 |
| KR20190060527A (ko) | 2019-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110010187B (zh) | 半导体存储器装置及其操作方法 | |
| CN112735504B (zh) | 存储器装置及其修复方法 | |
| KR102766341B1 (ko) | 메모리 모듈, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법 | |
| US10191805B2 (en) | Semiconductor memory devices and memory systems including the same | |
| US10719264B2 (en) | Solid state drive device and storage system having the same | |
| CN110995289B (zh) | 错误检测码生成电路 | |
| KR102849285B1 (ko) | 메모리 모듈, 그것을 제어하는 메모리 제어기의 에러 정정 방법, 및 그것을포함하는 컴퓨팅 시스템 | |
| CN113050883B (zh) | 存储器装置、包括存储器装置的存储器系统及其操作方法 | |
| US10002045B2 (en) | Semiconductor memory devices having input/output gating circuit and memory systems including the same | |
| CN107068176B (zh) | 半导体存储器设备及包括半导体存储器设备的存储器系统 | |
| US20160018998A1 (en) | Methods and Systems for Scalable Reliability Management of Non-Volatile Memory Modules | |
| US9652415B2 (en) | Atomic non-volatile memory data transfer | |
| EP3770764B1 (en) | Method of controlling repair of volatile memory device and storage device performing the same | |
| US10423483B2 (en) | Semiconductor memory device and method for controlling write timing of parity data | |
| CN107919160B (zh) | 测试单元阵列的方法及执行其的半导体器件 | |
| US20150089327A1 (en) | Semiconductor memory devices and memory systems including the same | |
| EP3422353B1 (en) | Stacked memory chip device with enhanced data protection capability | |
| US9601218B2 (en) | Memory device and computing system including the same | |
| CN115938444A (zh) | 存储器装置及其操作方法 | |
| CN112988045A (zh) | 数据存储装置及其操作方法 | |
| US20250069683A1 (en) | Flexible address swap column redundancy | |
| US12531128B2 (en) | Memory device, memory system having the same and operating method thereof | |
| CN110908829A (zh) | 存储器系统及其操作方法 | |
| CN115202927A (zh) | 存储装置及其操作方法 | |
| US11645003B2 (en) | Memory system generating parity data based on written data and control method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |