CN114830241A - 一种存储器的失效修复方法及装置 - Google Patents

一种存储器的失效修复方法及装置 Download PDF

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Publication number
CN114830241A
CN114830241A CN201980103189.8A CN201980103189A CN114830241A CN 114830241 A CN114830241 A CN 114830241A CN 201980103189 A CN201980103189 A CN 201980103189A CN 114830241 A CN114830241 A CN 114830241A
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China
Prior art keywords
repair
address
information table
failure
read
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Pending
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CN201980103189.8A
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English (en)
Inventor
沈国明
王正波
刘荣斌
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN114830241A publication Critical patent/CN114830241A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair

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  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

本申请实施例公开了一种存储器的失效修复方法及装置，涉及芯片技术领域，能够提高修复资源的利用率，提高存储器的良品率。具体方案为：应用于一种装置，装置包括逻辑裸片Logic die，逻辑裸片包括修复存储资源，方法包括：获取访问请求，访问请求包括读写指令和请求访问的数据单元的目的地址；基于目的地址，查询失效修复信息表，若目的地址在失效修复信息表中有表项命中，则向命中的表项对应的修复存储资源执行访问请求中的读写指令，失效修复信息表用于指示存储器中失效的地址，以及失效的地址对应的修复存储资源。

Description

PCT国内申请，说明书已公开。

Claims (54)

  1. PCT国内申请，权利要求书已公开。
CN201980103189.8A 2019-12-31 2019-12-31 一种存储器的失效修复方法及装置 Pending CN114830241A (zh)

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PCT/CN2019/130840 WO2021134628A1 (zh) 2019-12-31 2019-12-31 一种存储器的失效修复方法及装置

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CN114830241A true CN114830241A (zh) 2022-07-29

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CN (1) CN114830241A (zh)
WO (1) WO2021134628A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115757196A (zh) * 2022-11-09 2023-03-07 超聚变数字技术有限公司 内存、访问内存方法及计算设备
CN115881202A (zh) * 2023-02-09 2023-03-31 长鑫存储技术有限公司 一种修复电路及方法、存储器和电子设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115168087B (zh) * 2022-07-08 2024-03-19 超聚变数字技术有限公司 一种确定内存故障的修复资源粒度的方法及装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9099165B1 (en) * 2012-05-02 2015-08-04 Inphi Corporation Single chip mixed memory for dynamic replacement of DRAM bad cell
US9449720B1 (en) * 2015-11-17 2016-09-20 Macronix International Co., Ltd. Dynamic redundancy repair
KR101805028B1 (ko) * 2016-06-28 2017-12-06 고려대학교 산학협력단 물리 영역과 가상 영역을 근거로 결함 리페어를 적용하는 메모리 장치 및 그의 제어 방법
US10636511B2 (en) * 2017-07-27 2020-04-28 Taiwan Semiconductor Manufacturing Company Limited Memory repair scheme
CN109698008B (zh) * 2017-10-23 2021-01-15 北京兆易创新科技股份有限公司 Nor型存储器位线故障的修复方法及装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115757196A (zh) * 2022-11-09 2023-03-07 超聚变数字技术有限公司 内存、访问内存方法及计算设备
CN115757196B (zh) * 2022-11-09 2023-09-01 超聚变数字技术有限公司 内存、访问内存方法及计算设备
CN115881202A (zh) * 2023-02-09 2023-03-31 长鑫存储技术有限公司 一种修复电路及方法、存储器和电子设备

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