JP7271139B2 - 半導体メモリ装置及びその動作方法 - Google Patents

半導体メモリ装置及びその動作方法 Download PDF

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JP7271139B2
JP7271139B2 JP2018217444A JP2018217444A JP7271139B2 JP 7271139 B2 JP7271139 B2 JP 7271139B2 JP 2018217444 A JP2018217444 A JP 2018217444A JP 2018217444 A JP2018217444 A JP 2018217444A JP 7271139 B2 JP7271139 B2 JP 7271139B2
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normal
address
defective
memory device
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JP2019096376A (ja
JP2019096376A5 (https=
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經綸 金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme

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JP2018217444A 2017-11-24 2018-11-20 半導体メモリ装置及びその動作方法 Active JP7271139B2 (ja)

Applications Claiming Priority (2)

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KR10-2017-0158829 2017-11-24
KR1020170158829A KR20190060527A (ko) 2017-11-24 2017-11-24 반도체 메모리 장치 및 그 동작 방법

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JP2019096376A JP2019096376A (ja) 2019-06-20
JP2019096376A5 JP2019096376A5 (https=) 2021-11-25
JP7271139B2 true JP7271139B2 (ja) 2023-05-11

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US (1) US10692582B2 (https=)
JP (1) JP7271139B2 (https=)
KR (1) KR20190060527A (https=)
CN (1) CN110010187B (https=)
DE (1) DE102018122491A1 (https=)

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CN114830241A (zh) * 2019-12-31 2022-07-29 华为技术有限公司 一种存储器的失效修复方法及装置
US11797371B2 (en) 2020-08-18 2023-10-24 Changxin Memory Technologies, Inc. Method and device for determining fail bit repair scheme
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US11887685B2 (en) 2020-08-18 2024-01-30 Changxin Memory Technologies, Inc. Fail Bit repair method and device
US11791010B2 (en) 2020-08-18 2023-10-17 Changxin Memory Technologies, Inc. Method and device for fail bit repairing
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KR102870571B1 (ko) * 2021-03-24 2025-10-13 양쯔 메모리 테크놀로지스 씨오., 엘티디. 리던던트 뱅크를 사용하여 결함 있는 메인 뱅크를 복구하기 위한 메모리 디바이스
US11984179B2 (en) 2021-03-26 2024-05-14 Changxin Memory Technologies, Inc. Redundant circuit assigning method and device, and medium
CN112908403B (zh) * 2021-03-31 2022-05-17 长鑫存储技术有限公司 备用电路分派方法、装置、设备及介质
US11791012B2 (en) 2021-03-31 2023-10-17 Changxin Memory Technologies, Inc. Standby circuit dispatch method, apparatus, device and medium
US11881278B2 (en) 2021-03-31 2024-01-23 Changxin Memory Technologies, Inc. Redundant circuit assigning method and device, apparatus and medium
EP4307306B1 (en) * 2021-04-30 2026-03-18 Huawei Technologies Co., Ltd. Access method for storage unit, repair method, die and storage chip
CN113539347B (zh) 2021-07-21 2023-08-18 长鑫存储技术有限公司 存储器修补线路确定方法及装置、存储介质及电子设备
CN116343883B (zh) * 2021-12-22 2025-11-21 浙江驰拓科技有限公司 一种存储器及存储器修复方法
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CN118212966A (zh) * 2022-12-08 2024-06-18 长鑫存储技术有限公司 一种信号传输电路及其方法、存储器和电子设备
CN115881202B (zh) * 2023-02-09 2023-05-12 长鑫存储技术有限公司 一种修复电路及方法、存储器和电子设备

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US20080072121A1 (en) 2006-07-11 2008-03-20 Seung-Min Lee Method and Apparatus For Repairing Defective Cell for Each Cell Section Word Line

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US20080072121A1 (en) 2006-07-11 2008-03-20 Seung-Min Lee Method and Apparatus For Repairing Defective Cell for Each Cell Section Word Line

Also Published As

Publication number Publication date
US20190164621A1 (en) 2019-05-30
CN110010187A (zh) 2019-07-12
CN110010187B (zh) 2024-09-17
US10692582B2 (en) 2020-06-23
JP2019096376A (ja) 2019-06-20
DE102018122491A1 (de) 2019-05-29
KR20190060527A (ko) 2019-06-03

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